Domain boundaries are a determining factor in the performance of organic electronic devices since they can trap mobile charge carriers. We point out the possibility of time-dependent motion of these boundaries and suggest that their thermal fluctuations can be a source of dynamic disorder in organic films. In particular, we study the C8-BTBT monolayer films with several different domain boundaries. After characterizing the crystallography and diversity of structures in the first layer of C8-BTBT on Au(111), we focus on quantifying the domain boundary fluctuations in the saturated monolayer. We find that the mean squared displacement of the boundary position grows linearly with time at early times but tends to saturate after about 7 s. This behavior is ascribed to confined diffusion of the interface position based on fits and numerical integration of a Langevin equation for the interface motion.
Skip Nav Destination
CHORUS
Article navigation
28 March 2021
Research Article|
March 22 2021
Dynamics of domain boundaries at metal–organic interfaces
Sara Pazoki;
Sara Pazoki
Organic and Carbon Electronics Lab (ORaCEL) and Department of Physics, North Carolina State University
, Raleigh, North Carolina 27695, USA
Search for other works by this author on:
Jordan Frick;
Jordan Frick
Organic and Carbon Electronics Lab (ORaCEL) and Department of Physics, North Carolina State University
, Raleigh, North Carolina 27695, USA
Search for other works by this author on:
Daniel B. Dougherty
Daniel B. Dougherty
a)
Organic and Carbon Electronics Lab (ORaCEL) and Department of Physics, North Carolina State University
, Raleigh, North Carolina 27695, USA
a)Author to whom correspondence should be addressed: [email protected]
Search for other works by this author on:
a)Author to whom correspondence should be addressed: [email protected]
J. Chem. Phys. 154, 124704 (2021)
Article history
Received:
September 11 2020
Accepted:
March 01 2021
Citation
Sara Pazoki, Jordan Frick, Daniel B. Dougherty; Dynamics of domain boundaries at metal–organic interfaces. J. Chem. Phys. 28 March 2021; 154 (12): 124704. https://doi.org/10.1063/5.0029313
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
DeePMD-kit v2: A software package for deep potential models
Jinzhe Zeng, Duo Zhang, et al.
CREST—A program for the exploration of low-energy molecular chemical space
Philipp Pracht, Stefan Grimme, et al.
Dielectric profile at the Pt(111)/water interface
Jia-Xin Zhu, Jun Cheng, et al.
Related Content
The effect of density-of-state tails on band-to-band tunneling: Theory and application to tunnel field effect transistors
J. Appl. Phys. (October 2017)
Performance analysis of InP nanowire band-to-band tunneling field-effect transistors
Appl. Phys. Lett. (August 2009)
Direct molecular quantification of electronic disorder in N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine on Au(111)
J. Vac. Sci. Technol. B (August 2020)
Enhanced carrier mobility and direct tunneling probability of biaxially strained Ge1−xSnx alloys for field-effect transistors applications
J. Appl. Phys. (May 2015)
Suppression of dynamic disorder in fullerenes at metal-organic interfaces
J. Chem. Phys. (December 2019)