In this study, we develop a new approach for stabilization of metallic phases of monolayer MoS2 through the formation of lateral heterostructures composed of semiconducting/metallic MoS2. The structure of metallic (a mixture of T and T′) and semiconducting (2H) phases was unambiguously characterized by Raman spectroscopy, x-ray photoelectron spectroscopy, photoluminescence imaging, and transmission electron microscope observations. The amount of NaCl, reaction temperature, reaction time, and locations of substrates are essential for controlling the percentage of metallic/semiconducting phases in lateral heterostructures; loading a large amount of NaCl at low temperatures with short reaction times prefers metallic phases. The existence of the semiconducting phase in MoS2 lateral heterostructures significantly enhances the stability of the metallic phases through passivation of reactive edges. The same approach can be applied to other transition metal dichalcogenides (TMDs), such as WS2, leading to boosting of basic research and application of TMDs in metallic phases.
REFERENCES
1.
S.
Kang
, D.
Lee
, J.
Kim
, A.
Capasso
, H. S.
Kang
, J.-W.
Park
, C.-H.
Lee
, and G.-H.
Lee
, “2D semiconducting materials for electronic and optoelectronic applications: Potential and challenge
,” 2D Mater.
7
, 022003
(2020
).2.
S.
Shi
, Z.
Sun
, and Y. H.
Hu
, “Synthesis, stabilization and applications of 2-dimensional 1T metallic MoS2
,” J. Mater. Chem. A
6
, 23932
(2018
).3.
W.
Zhao
, J.
Pan
, Y.
Fang
, X.
Che
, D.
Wang
, K.
Bu
, and H. F.
Frontispiece
, “Metastable MoS2: Crystal structure, electronic band structure, synthetic approach and intriguing physical properties
,” Chem.-Eur. J.
24
, 15942
(2018
).4.
L.
Liu
, J.
Wu
, L.
Wu
, M.
Ye
, X.
Liu
, Q.
Wang
, S.
Hou
, P.
Lu
, L.
Sun
, J.
Zheng
, L.
Xing
, L.
Gu
, X.
Jiang
, L.
Xie
, and L.
Jiao
, “Phase-selective synthesis of 1T′ MoS2 monolayers and heterophase bilayers
,” Nat. Mater.
17
, 1108
(2018
).5.
P.
Joensen
, R. F.
Frindt
, and S. R.
Morrison
, “Single-layer MoS2
,” Mater. Res.
21
, 457
(1986
).6.
M.
Acerce
, D.
Voiry
, and M.
Chhowalla
, “Metallic 1T phase MoS2 nanosheets as supercapacitor electrode materials
,” Nat. Nanotechnol.
10
, 313
(2015
).7.
C.
Guo
, J.
Pan
, H.
Li
, T.
Lin
, P.
Liu
, C.
Song
, D.
Wang
, G.
Mu
, X.
Lai
, H.
Zhang
, W.
Zhou
, M.
Chen
, and F.
Huang
, “Observation of superconductivity in 1T′-MoS2 nanosheets
,” J. Mater. Chem. C
5
, 10855
(2017
).8.
L.
Nurdiwijayanto
, R.
Ma
, N.
Sakai
, and T.
Sasaki
, “Insight into the structural and electronic nature of chemically exfoliated molybdenum disulfide nanosheets in aqueous dispersions
,” Dalton Trans.
47
, 3014
(2018
).9.
L.
Nurdiwijayanto
, R.
Ma
, N.
Sakai
, and T.
Sasaki
, “Stability and nature of chemically exfoliated MoS2 in aqueous suspensions
,” Inorg. Chem.
56
, 7620
(2017
).10.
R. C.
Longo
, R.
Addou
, S.
KC
, J.-Y.
Noh
, C. M.
Smyth
, D.
Barrera
, C.
Zhang
, J. W. P.
Hsu
, R. M.
Wallace
, and K.
Cho
, “Intrinsic air stability mechanisms of two-dimensional transition metal dichalcogenide surfaces: Basal versus edge oxidation
,” 2D Mater.
4
, 025050
(2017
).11.
S.
Tongay
, J.
Zhou
, C.
Ataca
, J.
Liu
, J. S.
Kang
, T. S.
Matthews
, L.
You
, J.
Li
, J. C.
Grossman
, and J.
Wu
, “Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating
,” Nano Lett.
13
, 2831
(2013
).12.
M.
Kan
, J. Y.
Wang
, X. W.
Li
, S. H.
Zhang
, Y. W.
Li
, Y.
Kawazoe
, Q.
Sun
, and P.
Jena
, “Structures and phase transition of a MoS2 monolayer
,” J. Phys. Chem. C
118
, 1515
(2014
).13.
A. N.
Enyashin
, L.
Yadgarov
, L.
Houben
, I.
Popov
, M.
Weidenbach
, R.
Tenne
, M.
Bar-Sadan
, and G.
Seifert
, “New route for stabilization of 1T-WS2 and MoS2 phases
,” J. Phys. Chem. C
115
, 24586
(2011
).14.
R.
Canton-Vitoria
, Y.
Sayed-Ahmad-Baraza
, B.
Humbert
, R.
Arenal
, C.
Ewels
, and N.
Tagmatarchis
, “Pyrene coating transition metal disulfides as protection from photooxidation and environmental aging
,” J. Nanomater.
10
, 363
(2020
).15.
X. Y.
Li
, M. S.
Wu
, B.
Xu
, R. F.
Liu
, and C. Y.
Ouyang
, “Compressive strain induced dynamical stability of monolayer 1T-MX2 (M = Mo, W; X = S, Se)
,” Mater. Res. Express
4
, 115018
(2017
).16.
F.
Raffone
, C.
Ataca
, J. C.
Grossman
, and G.
Cicero
, “MoS2 enhanced T-phase stabilization and tunability through alloying
,” J. Phys. Chem. Lett.
7
, 2304
(2016
).17.
A.
Kagkoura
, R.
Canton-Vitoria
, L.
Vallan
, J.
Hernandez-Ferrer
, A. M.
Benito
, W. K.
Maser
, R.
Arenal
, and N.
Tagmatarchis
, “Bottom-up synthesized MoS2 interfacing polymer carbon nanodots with electrocatalytic activity for hydrogen evolution
,” Chem.-Eur. J.
26
, 6635
(2020
).18.
R.
Canton-Vitoria
, Y.
Sayed-Ahmad-Baraza
, M.
Pelaez-Fernandez
, R.
Arenal
, C.
Bittencourt
, C.
Ewels
, and N.
Tagmatarchis
, “Functionalization of MoS2 with 1,2-dithiolanes: Toward donor-acceptor nanohybrids for energy conversion
,” npj 2D Mater. Appl.
1
, 13
(2017
).19.
E. E.
Benson
, H.
Zhang
, S. A.
Schuman
, S. U.
Nanayakkara
, N. D.
Bronstein
, S.
Ferrere
, J. L.
Blackburn
, and E. M.
Miller
, “Balancing the hydrogen evolution reaction, surface energetics, and stability of metallic MoS2 nanosheets via covalent functionalization
,” J. Am. Chem. Soc.
140
, 441
(2018
).20.
S.
Ahn
, G.
Kim
, P. K.
Nayak
, S. I.
Yoon
, H.
Lim
, H.-J.
Shin
, and H. S.
Shin
, “Simple fabrication of air-stable black phosphorus heterostructures with large-area hBN sheets grown by chemical vapor deposition method
,” ACS Nano
10
, 8973
(2016
).21.
G.-H.
Lee
, X.
Cui
, Y. D.
Kim
, G.
Arefe
, X.
Zhang
, C.-H.
Lee
, F.
Ye
, K.
Watanabe
, T.
Taniguchi
, P.
Kim
, and J.
Hone
, “Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact, resistance, and threshold voltage
,” ACS Nano
9
, 7019
(2015
).22.
C.
Huang
, S.
Wu
, A. M.
Sanchez
, J. J. P.
Peters
, R.
Beanland
, J. S.
Ross
, P.
Rivera
, W.
Yao
, D. H.
Cobden
, and X.
Xu
, “Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
,” Nat. Mater.
13
, 1096
–1101
(2014
).23.
K.
Chen
, X.
Wan
, W.
Xie
, J.
Wen
, Z.
Kang
, X.
Zeng
, H.
Chen
, and J.
Xu
, “Lateral built-in potential of monolayer MoS2-WS2 in-plane heterostructures by a shortcut growth strategy
,” Adv. Mater.
27
, 6431
(2015
).24.
L.
Aleksandrov
, T.
Komatsu
, R.
Iordanova
, and Y.
Dimitriev
, “Study of molybdenum coordination state and crystallization behavior in MoO3–La2O3–B2O3 glasses by Raman spectroscopy
,” J. Phys. Chem. Solids
72
, 263
(2011
).25.
B. C.
Windom
, W. G.
Sawyer
, and D. W.
Hahn
, “A Raman spectroscopic study of MoS2 and MoO3: Applications to tribological systems
,” Tribol. Lett.
42
, 301
(2011
).26.
L.
Jiang
, S.
Zhang
, S. A.
Kulinich
, X.
Song
, J.
Zhu
, X.
Wang
, and H.
Zeng
, “Optimizing hybridization of 1T and 2H phases in MoS2 monolayers to improve capacitances of supercapacitors
,” Mater. Res.
3
, 177
(2015
).27.
Z.
Wang
, N.
Shoucong
, F.
Takeshi
, H.
Akihiko
, and C.
Mingwei
, “Unveiling three-dimensional stacking sequences of 1T phase MoS2 monolayers by electron diffraction
,” ACS Nano
10
, 10308
–10316
(2016
).28.
J.
Zhou
, J.
Lin
, X.
Huang
, Y.
Zhou
, Y.
Chen
, J.
Xia
, H.
Wang
, Y.
Xie
, H.
Yu
, J.
Lei
, D.
Wu
, F.
Liu
, Q.
Fu
, Q.
Zeng
, C.-H.
Hsu
, C.
Yang
, L.
Lu
, T.
Yu
, Z.
Shen
, H.
Lin
, B. I.
Yakobson
, Q.
Liu
, K.
Suenaga
, G.
Liu
, and Z.
Liu
, “A library of atomically thin metal chalcogenides
,” Nature
556
, 355
(2018
).29.
C.
Sharma
, A.
Surendran
, A.
Varghese
, and M.
Thalakulam
, “Stable and scalable 1T MoS2 with low temperature-coefficient of resistance
,” Sci. Rep.
8
, 12463
(2018
).30.
Q.
Huang
, X.
Li
, M.
Sun
, L.
Zhang
, C.
Song
, L.
Zhu
, P.
Chen
, Z.
Xu
, W.
Wang
, and X.
Bai
, “The mechanistic insights into the 2H-1T phase transition of MoS2 upon alkali metal intercalation: From the study of dynamic sodiation processes of MoS2 nanosheets
,” Adv. Mater. Interfaces
4
, 1700171
(2017
).31.
E.
Koo
, Y.
Lee
, Y.
Song
, M.
Park
, and S.-Y.
Ju
, “Growth order-dependent strain variations of lateral transition metal dichalcogenide heterostructures
,” ACS Appl. Mater. Interfaces
1
, 113
(2019
).32.
H.
Huang
, W.
Xu
, T.
Chen
, R.-J.
Chang
, Y.
Sheng
, Q.
Zhang
, L.
Hou
, and J. H.
Warner
, “High-performance two-dimensional Schottky diodes utilizing chemical vapour deposition-grown graphene–MoS2 heterojunctions
,” ACS Appl. Mater. Interfaces
10
, 37258
(2018
).33.
Y.
Ang
, H.
Yang
, and L.
Ang
, “Universal scaling laws in Schottky heterostructures based on two-dimensional materials
,” Phys. Rev. Lett.
121
, 056802
(2018
).© 2020 Author(s).
2020
Author(s)
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