Determining the influence of the solvent on electrochemical reaction energetics is a central challenge in our understanding of electrochemical interfaces. To date, it is unclear how well existing methods predict solvation energies at solid/liquid interfaces, since they cannot be assessed experimentally. Ab initio molecular dynamics (AIMD) simulations present a physically highly accurate, but also a very costly approach. In this work, we employ extensive AIMD simulations to benchmark solvation at charge-neutral metal/water interfaces against commonly applied continuum solvent models. We consider a variety of adsorbates including *CO, *CHO, *COH, *OCCHO, *OH, and *OOH on Cu, Au, and Pt facets solvated by water. The surfaces and adsorbates considered are relevant, among other reactions, to electrochemical CO2 reduction and the oxygen redox reactions. We determine directional hydrogen bonds and steric water competition to be critical for a correct description of solvation at the metal/water interfaces. As a consequence, we find that the most frequently applied continuum solvation methods, which do not yet capture these properties, do not presently provide more accurate energetics over simulations in vacuum. We find most of the computed benchmark solvation energies to linearly scale with hydrogen bonding or competitive water adsorption, which strongly differ across surfaces. Thus, we determine solvation energies of adsorbates to be non-transferable between metal surfaces, in contrast to standard practice.
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14 April 2020
Research Article|
April 09 2020
Solvation at metal/water interfaces: An ab initio molecular dynamics benchmark of common computational approaches
Special Collection:
Interfacial Structure and Dynamics for Electrochemical Energy Storage
Hendrik H. Heenen
;
Hendrik H. Heenen
1
Department of Physics, Technical University of Denmark
, DK-2800 Kgs. Lyngby, Denmark
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Joseph A. Gauthier
;
Joseph A. Gauthier
2
SUNCAT Center for Interface Science and Catalysis, Department of Chemical Engineering, Stanford University
, Stanford, California 94305, USA
3
SUNCAT Center for Interface Science and Catalysis, SLAC National Accelerator Laboratory
, 2575 Sand Hill Road, Menlo Park, California 94025, USA
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Henrik H. Kristoffersen
;
Henrik H. Kristoffersen
1
Department of Physics, Technical University of Denmark
, DK-2800 Kgs. Lyngby, Denmark
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Thomas Ludwig
;
Thomas Ludwig
2
SUNCAT Center for Interface Science and Catalysis, Department of Chemical Engineering, Stanford University
, Stanford, California 94305, USA
3
SUNCAT Center for Interface Science and Catalysis, SLAC National Accelerator Laboratory
, 2575 Sand Hill Road, Menlo Park, California 94025, USA
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Karen Chan
Karen Chan
a)
1
Department of Physics, Technical University of Denmark
, DK-2800 Kgs. Lyngby, Denmark
a)Author to whom correspondence should be addressed: kchan@fysik.dtu.dk
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a)Author to whom correspondence should be addressed: kchan@fysik.dtu.dk
Note: This paper is part of the JCP Special Topic on Interfacial Structure and Dynamics for Electrochemical Energy Storage.
J. Chem. Phys. 152, 144703 (2020)
Article history
Received:
January 12 2020
Accepted:
March 19 2020
Citation
Hendrik H. Heenen, Joseph A. Gauthier, Henrik H. Kristoffersen, Thomas Ludwig, Karen Chan; Solvation at metal/water interfaces: An ab initio molecular dynamics benchmark of common computational approaches. J. Chem. Phys. 14 April 2020; 152 (14): 144703. https://doi.org/10.1063/1.5144912
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