The influence of high-energy (1.6 MeV) Ar2+ irradiation on the interfacial interaction between cerium oxide thin films (∼15 nm) with a SiO2/Si substrate is investigated using transmission electron microscopy, ultrahigh vacuum x-ray photoelectron spectroscopy (XPS), and a carbon monoxide (CO) oxidation catalytic reaction using ambient pressure XPS. The combination of these methods allows probing the dynamics of vacancy generation and its relation to chemical interactions at the CeO2/SiO2/Si interface. The results suggest that irradiation causes amorphization of some portion of CeO2 at the CeO2/SiO2/Si interface and creates oxygen vacancies due to the formation of Ce2O3 at room temperature. The subsequent ultra-high-vacuum annealing of irradiated films increases the concentration of Ce2O3 with the simultaneous growth of the SiO2 layer. Interactions with CO molecules result in an additional reduction of cerium and promote the transition of Ce2O3 to a silicate compound. Thermal annealing of thin films exposed to oxygen or carbon monoxide shows that the silicate phase is highly stabile even at 450 °C.
Skip Nav Destination
Article navigation
14 March 2020
Research Article|
March 09 2020
Irradiation-induced reactions at the CeO2/SiO2/Si interface
Special Collection:
Oxide Chemistry and Catalysis
Pitambar Sapkota
;
Pitambar Sapkota
1
Department of Physics, University of Notre Dame
, Notre Dame, Indiana 46556, USA
2
Notre Dame Radiation Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Ani Aprahamian;
Ani Aprahamian
1
Department of Physics, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Kwong Yu Chan;
Kwong Yu Chan
3
Department of Chemistry, University of Hong Kong
, Pokfulam, Hong Kong
Search for other works by this author on:
Bryce Frentz;
Bryce Frentz
4
Nuclear Science Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Kevin T. Macon;
Kevin T. Macon
4
Nuclear Science Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Sylwia Ptasinska
;
Sylwia Ptasinska
1
Department of Physics, University of Notre Dame
, Notre Dame, Indiana 46556, USA
2
Notre Dame Radiation Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Daniel Robertson;
Daniel Robertson
4
Nuclear Science Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
Search for other works by this author on:
Khachatur Manukyan
Khachatur Manukyan
a)
4
Nuclear Science Laboratory, University of Notre Dame
, Notre Dame, Indiana 46556, USA
a)Author to whom correspondence should be addressed: kmanukya@nd.edu
Search for other works by this author on:
a)Author to whom correspondence should be addressed: kmanukya@nd.edu
Note: This article is part of the JCP Special Topic on Oxide Chemistry and Catalysis.
J. Chem. Phys. 152, 104704 (2020)
Article history
Received:
December 15 2019
Accepted:
February 16 2020
Citation
Pitambar Sapkota, Ani Aprahamian, Kwong Yu Chan, Bryce Frentz, Kevin T. Macon, Sylwia Ptasinska, Daniel Robertson, Khachatur Manukyan; Irradiation-induced reactions at the CeO2/SiO2/Si interface. J. Chem. Phys. 14 March 2020; 152 (10): 104704. https://doi.org/10.1063/1.5142619
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00