To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.
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7 February 2017
Research Article|
December 20 2016
Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches
I. J. M. Erkens;
I. J. M. Erkens
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2
Holst Centre
, P.O. Box 8550, 5605 KN Eindhoven, The Netherlands
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M. A. Verheijen;
M. A. Verheijen
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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H. C. M. Knoops
;
H. C. M. Knoops
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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W. Keuning;
W. Keuning
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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F. Roozeboom
;
F. Roozeboom
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2
Holst Centre
, P.O. Box 8550, 5605 KN Eindhoven, The Netherlands
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W. M. M. Kessels
W. M. M. Kessels
a)
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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I. J. M. Erkens
1,2
M. A. Verheijen
1
H. C. M. Knoops
1
W. Keuning
1
F. Roozeboom
1,2
W. M. M. Kessels
1,a)
1
Eindhoven University of Technology
, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
2
Holst Centre
, P.O. Box 8550, 5605 KN Eindhoven, The Netherlands
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
J. Chem. Phys. 146, 052818 (2017)
Article history
Received:
September 10 2016
Accepted:
November 29 2016
Citation
I. J. M. Erkens, M. A. Verheijen, H. C. M. Knoops, W. Keuning, F. Roozeboom, W. M. M. Kessels; Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches. J. Chem. Phys. 7 February 2017; 146 (5): 052818. https://doi.org/10.1063/1.4972120
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