The alignment of electrostatic potential between different atomic configurations is necessary for first-principles calculations of band offsets across interfaces and formation energies of charged defects. However, strong oscillations of this potential at the atomic scale make alignment challenging, especially when atomic geometries change considerably from bulk to the vicinity of defects and interfaces. We introduce a method to suppress these strong oscillations by eliminating the deep wells in the potential at each atom. We demonstrate that this method considerably improves the system-size convergence of a wide range of first-principles predictions that depend on the alignment of electrostatic potentials, including band offsets at solid-liquid interfaces, and formation energies of charged vacancies in solids and at solid surfaces in vacuum. Finally, we use this method in conjunction with continuum solvation theories to investigate energetics of charged vacancies at solid-liquid interfaces. We find that for the example of an NaCl (001) surface in water, solvation reduces the formation energy of charged vacancies by 0.5 eV: calculation of this important effect was previously impractical due to the computational cost in molecular-dynamics methods.
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14 March 2017
Research Article|
March 14 2017
First-principles electrostatic potentials for reliable alignment at interfaces and defects
Ravishankar Sundararaman
;
Ravishankar Sundararaman
1Department of Materials Science and Engineering,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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Yuan Ping
Yuan Ping
2Department of Chemistry and Biochemistry,
University of California
, Santa Cruz, Califonia 95064, USA
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a)
R. Sundararaman and Y. Ping contributed equally to this work.
b)
Electronic mail: sundar@rpi.edu
c)
Electronic mail: yuanping@ucsc.edu
J. Chem. Phys. 146, 104109 (2017)
Article history
Received:
December 16 2016
Accepted:
February 23 2017
Citation
Ravishankar Sundararaman, Yuan Ping; First-principles electrostatic potentials for reliable alignment at interfaces and defects. J. Chem. Phys. 14 March 2017; 146 (10): 104109. https://doi.org/10.1063/1.4978238
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