Photoelectron spectroscopy with synchrotron radiation (SRPES), temperature programmed desorption (TPD), low energy electron diffraction (LEED), and ion-scattering spectroscopy (ISS) were used in order to study the interface. A clear hexagonal LEED pattern confirmed the presence of a quite large grain of Ti(0001) on the substrate while no new superstructure was formed after deposition of either at room or at elevated temperatures. A series of high resolution spectra after step by step deposition and gradual annealing indicated strong interaction between and the substrate while ISS measurements showed that there is no migration of Ti atoms into the deposit layers. Additional quantities of deposited grew stoichimetrically on top of the chemically active interface. Annealing at caused clustering of the multilayer and TPD results showed that they desorbed stoichimetrically at temperatures between 360 and . The interfacial species dissociated by the disruption of the Cl–Mg bonds at temperatures higher than and metallic Mg evaporated. The Cl atoms remained attached on the Ti surface but they did not form any ordered structure even after annealing at . The present results indicate the occurrence of charge transfer at the interface through the Cl ligands and provide valuable information for catalyst design.
The interfacial properties of thin films grown on Ti(0001)
S. Karakalos, A. Siokou, F. Sutara, T. Skala, F. Vitaliy, S. Ladas, K. Prince, V. Matolin, V. Chab; The interfacial properties of thin films grown on Ti(0001). J. Chem. Phys. 21 August 2010; 133 (7): 074701. https://doi.org/10.1063/1.3473933
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