A generic model Hamiltonian is proposed for the study of the transport in a quasi-one-dimensional semiconductor in the charge transport regime intermediate between dynamic localization and static localization due to structural disorder. This intermediate regime may be appropriate for many organic semiconductors, including polymers, discotic liquid crystals, and DNA. The dynamics of the charge carrier is coupled to classical Langevin oscillators whose spectral density can be adjusted to model experimental systems of interest. In the proposed model, the density of states is constant (at constant temperature) and the transition from dynamic to static disorder is controlled by a single parameter. This paper further clarifies that the density of states may not contain all the information needed to describe the charge transport in some materials.
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7 July 2009
Research Article|
July 06 2009
Transition from dynamic to static disorder in one-dimensional organic semiconductors
Alessandro Troisi;
Alessandro Troisi
a)
Department of Chemistry and Centre of Scientific Computing,
University of Warwick
, Coventry CV4 7AL, United Kingdom
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David L. Cheung
David L. Cheung
Department of Chemistry and Centre of Scientific Computing,
University of Warwick
, Coventry CV4 7AL, United Kingdom
Search for other works by this author on:
a)
Electronic mail: a.troisi@warwick.ac.uk.
J. Chem. Phys. 131, 014703 (2009)
Article history
Received:
April 08 2009
Accepted:
June 09 2009
Connected Content
A correction has been published:
Erratum: “Transition from dynamic to static disorder in one-dimensional organic semiconductors” [J. Chem. Phys. 131, 014703 (2009)]
Citation
Alessandro Troisi, David L. Cheung; Transition from dynamic to static disorder in one-dimensional organic semiconductors. J. Chem. Phys. 7 July 2009; 131 (1): 014703. https://doi.org/10.1063/1.3167406
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