We present a theory for Raman scattering by current-carrying molecular junctions. The approach combines a nonequilibrium Green’s function (NEGF) description of the nonequilibrium junction with a generalized scattering theory formulation for evaluating the light scattering signal. This generalizes our previous study [M. Galperin and A. Nitzan, Phys. Rev. Lett. 95, 206802 (2005); J. Chem. Phys. 124, 234709 (2006)] of junction spectroscopy by including molecular vibrations and developing machinery for calculation of state-to-state (Raman scattering) fluxes within the NEGF formalism. For large enough voltage bias, we find that the light scattering signal contains, in addition to the normal signal associated with the molecular ground electronic state, also a contribution from the inverse process originated from the excited molecular state as well as an interference component. The effects of coupling to the electrodes and of the imposed bias on the total Raman scattering as well as its components are discussed. Our result reduces to the standard expression for Raman scattering in the isolated molecule case, i.e., in the absence of coupling to the electrodes. The theory is used to discuss the charge-transfer contribution to surface enhanced Raman scattering for molecules adsorbed on metal surfaces and its manifestation in the biased junction.
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14 April 2009
Research Article|
April 09 2009
Raman scattering in current-carrying molecular junctions
Michael Galperin;
Michael Galperin
a)
1Department of Chemistry and Biochemistry,
University of California San Diego
, La Jolla, California 92093-0340, USA
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Mark A. Ratner;
Mark A. Ratner
2Department of Chemistry and Materials Research Center,
Northwestern University
, Evanston, Illinois 60208, USA
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Abraham Nitzan
Abraham Nitzan
2Department of Chemistry and Materials Research Center,
Northwestern University
, Evanston, Illinois 60208, USA
3School of Chemistry, The Sackler Faculty of Science,
Tel Aviv University
, Tel Aviv 69978, Israel
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a)
Previous address: Theoretical Division and Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, NM 87545, USA. Electronic mail: [email protected].
J. Chem. Phys. 130, 144109 (2009)
Article history
Received:
December 26 2008
Accepted:
March 10 2009
Citation
Michael Galperin, Mark A. Ratner, Abraham Nitzan; Raman scattering in current-carrying molecular junctions. J. Chem. Phys. 14 April 2009; 130 (14): 144109. https://doi.org/10.1063/1.3109900
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