Introducing a charge into a solid such as a metal oxide through chemical, electrical, or optical means can dramatically change its chemical or physical properties. To minimize its free energy, a lattice will distort in a material specific way to accommodate (screen) the Coulomb and exchange interactions presented by the excess charge. The carrier-lattice correlation in response to these interactions defines the spatial extent of the perturbing charge and can impart extraordinary physical and chemical properties such as superconductivity and catalytic activity. Here we investigate by experiment and theory the atomically resolved distribution of the excess charge created by a single oxygen atom vacancy and a hydroxyl (OH) impurity defects on rutile surface. Contrary to the conventional model where the charge remains localized at the defect, scanning tunneling microscopy and density functional theory show it to be delocalized over multiple surrounding titanium atoms. The characteristic charge distribution controls the chemical, photocatalytic, and electronic properties of surfaces.
The electronic structure of oxygen atom vacancy and hydroxyl impurity defects on titanium dioxide (110) surface
Present address: International Advanced Research and Education Organization, Tohoku University, 6-6-07 Aoba, Sendai 980-8597, Japan.
Institute of Multidisciplinary Research for Advanced Materials (IMRAM), Tohoku University, 2-1-1 Katahira, Sendai 980-8577, Japan.
Authors to whom correspondence should be addressed. Electronic addresses: maki@riken.jp, petek@pitt.edu, jlyang@ustc.edu.cn, and jghou@ustc.edu.cn.
Taketoshi Minato, Yasuyuki Sainoo, Yousoo Kim, Hiroyuki S. Kato, Ken-ichi Aika, Maki Kawai, Jin Zhao, Hrvoje Petek, Tian Huang, Wei He, Bing Wang, Zhuo Wang, Yan Zhao, Jinlong Yang, J. G. Hou; The electronic structure of oxygen atom vacancy and hydroxyl impurity defects on titanium dioxide (110) surface. J. Chem. Phys. 28 March 2009; 130 (12): 124502. https://doi.org/10.1063/1.3082408
Download citation file: