MgxZn1xO thin films epitaxially grown on Mo(110) substrate under ultrahigh vacuum condition were studied in situ by various surface analysis techniques including x-ray photoelectron spectroscopy, Auger electron spectroscopy, low-energy electron diffraction, and high resolution electron energy loss spectroscopy. The results indicate that as-grown MgxZn1xO films are soluble phase, and a phase transition from wurtzite to cubic structure occurs in the region of x=0.550.67. The surface band gap can be tuned continuously with altering the content of Mg in MgxZn1xO films, and its tunable window width is about 1.9 eV. Based on heterojunction and quantum well structure, this kind of materials can be applied in wide-band-gap semiconductor devices, such as short-wavelength light-emitting devices.

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