By employing density-functional theory coupled with Holstein–Peierls model, we investigate the pressure and temperature dependence of the hole and electron mobilities in naphthalene single crystal from atmospheric pressure up to 2.1GPa (at room temperature) and from 5to296K (at ambient pressure). It is found that the pressure reduces the electron-phonon coupling strength and enhances the mobilities. Importantly, we point out that only when temperature-dependent structure modifications are taken into account can one better describe the temperature-dependent transport behavior. Especially, the band to hopping crossover transition temperature for the electron transport in the c-axis is calculated to be around 153K, which is close to the experimental result of between 100 and 150K. If this temperature-dependent structure modifications were neglected, the transition temperature would be only about 23K, as previously obtained [L. J. Wang et al, J. Chem. Phys.127, 044506 (2007)].

1.
V. I.
Adamovich
,
S. R.
Cordero
,
P. I.
Djurovich
,
A.
Tamayo
,
M. E.
Thompson
,
B. W.
D’Andrade
, and
S. R.
Forrest
,
Org. Electron.
4
,
77
(
2003
).
2.
H. E.
Katz
,
J. Mater. Chem.
7
,
369
(
1997
).
3.
G.
Horowitz
,
Adv. Mater. (Weinheim, Ger.)
10
,
365
(
1998
).
4.
H. E.
Katz
and
Z.
Bao
,
J. Phys. Chem. B
104
,
671
(
2000
).
5.
C. D.
Dimitrakopoulos
and
P. R. L.
Malenfant
,
Adv. Mater. (Weinheim, Ger.)
14
,
99
(
2002
).
6.
H.
Spanggaard
and
F. C.
Krebs
,
Sol. Energy Mater. Sol. Cells
83
,
125
(
2004
).
7.
W.
Ma
,
C.
Yang
,
X.
Gong
,
K.
Lee
, and
A. J.
Heeger
,
Adv. Funct. Mater.
15
,
1617
(
2005
).
8.
V.
Coropceanu
,
J.
Cornil
,
D. A.
da Silva Filho
,
Y.
Olivier
,
R.
Silbey
, and
J. L.
Brédas
,
Chem. Rev. (Washington, D.C.)
107
,
926
(
2007
).
9.
M. E.
Gershenson
,
V.
Podzorov
, and
A. F.
Morpurgo
,
Rev. Mod. Phys.
78
,
973
(
2006
).
10.
C.
Reese
and
Z.
Bao
,
Mater. Today
10
,
20
(
2007
).
11.
T.
Holstein
,
Ann. Phys. (N.Y.)
8
,
343
(
1959
).
12.
R. W.
Munn
and
R.
Silbey
,
J. Chem. Phys.
83
,
1854
(
1985
).
13.
V. M.
Kenkre
,
J. D.
Anderson
,
D. H.
Dunlap
, and
C. B.
Duck
,
Phys. Rev. Lett.
62
,
1165
(
1989
).
14.
K.
Hannewald
and
P. A.
Bobbert
,
Appl. Phys. Lett.
85
,
1535
(
2004
).
15.
R. A.
Marcus
,
J. Chem. Phys.
24
,
966
(
1956
).
16.
N. S.
Hush
,
Trans. Faraday Soc.
57
,
557
(
1961
).
17.
J.
Jortner
,
J. Chem. Phys.
64
,
4860
(
1976
).
18.
A.
Troisi
and
G.
Orlandi
,
Phys. Rev. Lett.
96
,
086601
(
2006
).
19.
A.
Troisi
,
Adv. Mater. (Weinheim, Ger.)
19
,
2000
(
2007
).
20.
Z.
Rang
,
A.
Haraldsson
,
D. M.
Kim
,
P. P.
Ruden
,
M. I.
Nathan
,
R. J.
Chesterfield
, and
C. D.
Frisbie
,
Appl. Phys. Lett.
79
,
2731
(
2001
).
21.
D. A.
Dows
,
L.
Hsu
,
S. S.
Mitra
,
O.
Brafman
,
M.
Hayek
,
W. B.
Daniels
, and
R. K.
Crawford
,
Chem. Phys. Lett.
22
,
595
(
1973
).
22.
Z.
Rang
,
M. I.
Nathan
,
P. P.
Ruden
,
V.
Podzorov
,
M. E.
Gershenson
,
C. R.
Newman
, and
C. D.
Frisbie
,
Appl. Phys. Lett.
86
,
123501
(
2005
).
23.
N.
Karl
,
Synth. Met.
133
,
649
(
2003
).
24.
K.
Hannewald
,
V. M.
Stojanović
,
J. M. T.
Schellekens
,
P. A.
Bobbert
,
G.
Kresse
, and
J.
Hafner
,
Phys. Rev. B
69
,
075211
(
2004
).
25.
K.
Hannewald
and
P. A.
Bobbert
,
Phys. Rev. B
69
,
075212
(
2004
).
26.
(a)
L. J.
Wang
,
Q.
Peng
,
Q. K.
Li
, and
Z.
Shuai
,
J. Chem. Phys.
127
,
044506
(
2007
);
[PubMed]
(b)
X. D.
Yang
,
Q. K.
Li
, and
Z.
Shuai
,
Nanotechnology
18
,
424029
(
2007
).
[PubMed]
27.
F. R.
Ahmed
and
D. W. J.
Cruickshank
,
Acta Crystallogr.
5
,
852
(
1952
).
28.
A. P.
Ryzhenkov
and
V. M.
Kozhin
,
Sov. Phys. Crystallogr.
12
,
943
(
1968
).
29.
C. P.
Brock
and
J. D.
Dunitz
,
Acta Crystallogr., Sect. B: Struct. Crystallogr. Cryst. Chem.
38
,
2218
(
1982
).
30.
E.
Baharie
and
G. S.
Pawley
,
Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr.
38
,
803
(
1982
).
31.
J. F. J.
Jordan
,
A.
Axmann
,
H.
Egger
, and
J.
Kalus
,
Phys. Status Solidi A
71
,
457
(
1982
).
32.
R. G. D.
Valle
,
E.
Venuti
, and
A.
Brillante
,
Chem. Phys.
198
,
79
(
1995
).
33.
F. P. A.
Fabbiani
,
D. R.
Allan
,
S.
Parsons
, and
C. R.
Pulham
,
Acta Crystallogr., Sect. B: Struct. Sci.
62
,
826
(
2006
).
34.
M.
Nicol
,
M.
Vernon
, and
J. T.
Woo
,
J. Chem. Phys.
63
,
1992
(
1975
).
35.
W.
Häfner
and
W.
Kiefer
,
J. Chem. Phys.
86
,
4582
(
1987
).
36.
S. C.
Capelli
,
A.
Albinati
,
S. A.
Mason
, and
B. T. M.
Willis
,
J. Phys. Chem. A
110
,
11695
(
2006
).
37.
G.
Kresse
and
J.
Hafner
,
Phys. Rev. B
47
,
558
(
1993
);
G.
Kresse
and
J.
Hafner
,
Phys. Rev. B
49
,
14251
(
1994
);
G.
Kresse
and
J.
Furthmüller
,
Phys. Rev. B
54
,
11169
(
1996
).
38.
Y. L.
Page
and
P.
Saxe
,
Phys. Rev. B
65
,
104104
(
2002
).
39.
E. F. C.
Byrd
,
G. E.
Scuseria
, and
C. F.
Chabalowski
,
J. Phys. Chem. B
108
,
13100
(
2004
).
40.
J.
Cornil
,
D.
Beljonne
,
J. P.
Calbert
, and
J. L.
Brédas
,
Adv. Mater. (Weinheim, Ger.)
13
,
1053
(
2001
).
41.
J. L.
Brédas
,
D.
Beljonne
,
V.
Coropceanu
, and
J.
Cornil
,
Chem. Rev. (Washington, D.C.)
104
,
4971
(
2004
).
42.
N.
Karl
, in
Organic Semiconductors
,
Landolt Bornstein, New Series, Group III
, Vol.
17
, edited by
K.-H.
Hellwege
and
O.
Madelung
(
Springer
,
Berlin
,
1985
), pp.
106
218
.
43.
L. B.
Schein
,
C. B.
Duke
, and
A. R.
McGhie
,
Phys. Rev. Lett.
40
,
197
(
1978
).
44.
A.
Troisi
and
G.
Orlandi
,
J. Phys. Chem. A
110
,
4065
(
2006
).
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