The electronic structures and the halogen inductive effects on the acetate anion were investigated in by photoelectron spectroscopy (PES) and ab initio calculations. The PES spectra indicated that the electron binding energies increased in the order of , contradictory to the known electron affinities of the halogen atoms. The measured adiabatic detachment energies (ADEs) are 3.80, 3.93, and and the vertical detachment energies (VDEs) are 3.96, 4.10, and for the F-, Cl-, and Br-substituted species, respectively. Structures of these anions and their neutral species were obtained by full geometry optimizations at the CCSD(T)/aug-cc-pVDZ level of theory, and final energies were calculated at the CCSD(T)/aug-cc-pVTZ level. The calculated ADEs (3.76, 3.88, and for F, Cl, Br, respectively) and VDEs (4.14, 4.29, and , respectively) are in good agreement with the corresponding experimental results. Theoretical analysis shows that the increase of ADE/VDE from F to Cl to Br is related to that the matching of the orbital energy of X with the group is better for Br than that of Cl and F. For comparison, additional calculations were carried out to include halogen substituted ethanol, . Similar trend on electron binding energies was also found. In contrast, the ionization potentials (IPs) of both and decrease in the order of . These systematic changes of detachment energy and IPs were explained by examining the charge redistributions upon detaching electrons.
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21 March 2007
Research Article|
March 15 2007
Electronic structures and electron detachment energies of halogen substituted acetate anions,
Wenbo Yu;
Wenbo Yu
Hefei National Laboratory for Physical Sciences at the Microscale,
University of Science and Technology of China
, Hefei 230026, China and Department of Physics, University of Science and Technology of China
, Hefei 230026, China
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Zijing Lin;
Zijing Lin
a)
Hefei National Laboratory for Physical Sciences at the Microscale,
University of Science and Technology of China
, Hefei 230026, China and Department of Physics, University of Science and Technology of China
, Hefei 230026, China
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Chuanfan Ding
Chuanfan Ding
Laser Chemistry Institute, Department of Chemistry,
Fudan University
, Shanghai, 200433, China
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a)
Author to whom correspondence should be addressed. FAX: +86-551-3606348. Electronic mail: [email protected]
J. Chem. Phys. 126, 114301 (2007)
Article history
Received:
November 22 2006
Accepted:
January 19 2007
Citation
Wenbo Yu, Zijing Lin, Chuanfan Ding; Electronic structures and electron detachment energies of halogen substituted acetate anions, . J. Chem. Phys. 21 March 2007; 126 (11): 114301. https://doi.org/10.1063/1.2646665
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