Gas diffusion and sorption in nanoceramic semiconductors are studied using atomistic simulation techniques and numerical results are presented for a variety of sorbate–sorbent systems. CuO, and MgO substrates are built on the computer using lattice constants and atomic parameters that have been either measured or computed by ab initio methods. The Universal force field is employed here for the description of both intramolecular and nonbonded interactions for various gas sorbates, including CO, and pure and in binary mixtures. Mean residence times are determined by molecular dynamics computations, whereas the Henry constant and the isosteric heat of adsorption are estimated by a Monte Carlo technique. The effects of surface hydroxylation on the diffusion and sorption characteristics are quantified and discussed in view of their significance in practical gas sensing applications. The importance of fast diffusion on the response time of the sensitive layer and of the sorption efficiency on the overall sensitivity as well as the potential synergy of the two phenomena are discussed.
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8 May 1999
Research Article|
May 08 1999
Simulation of gas diffusion and sorption in nanoceramic semiconductors
E. D. Skouras;
E. D. Skouras
Institute of Chemical Engineering and High Temperature Chemical Processes, Foundation for Research and Technology, Hellas
Department of Chemical Engineering, University of Patras, P.O. Box 1414, GR 26500, Patras, Greece
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V. N. Burganos;
V. N. Burganos
Institute of Chemical Engineering and High Temperature Chemical Processes, Foundation for Research and Technology, Hellas
Department of Chemical Engineering, University of Patras, P.O. Box 1414, GR 26500, Patras, Greece
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A. C. Payatakes
A. C. Payatakes
Institute of Chemical Engineering and High Temperature Chemical Processes, Foundation for Research and Technology, Hellas
Department of Chemical Engineering, University of Patras, P.O. Box 1414, GR 26500, Patras, Greece
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E. D. Skouras
,
V. N. Burganos
,
A. C. Payatakes
,
Institute of Chemical Engineering and High Temperature Chemical Processes, Foundation for Research and Technology, Hellas
J. Chem. Phys. 110, 9244–9253 (1999)
Article history
Received:
October 13 1998
Accepted:
February 16 1999
Citation
E. D. Skouras, V. N. Burganos, A. C. Payatakes; Simulation of gas diffusion and sorption in nanoceramic semiconductors. J. Chem. Phys. 8 May 1999; 110 (18): 9244–9253. https://doi.org/10.1063/1.478848
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