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LASERS, OPTICS, AND OPTOELECTRONICS

Sensitive dependence of hydrogen Balmer-alpha laser-induced fluorescence signal from hydrogen neutral beam on background magnetic field

E. L. Foley; F. M. Levinton

J. Appl. Phys. 98, 093101 (2005) https://doi.org/10.1063/1.2121935

Abstract

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Silicon carbide photoconductive switch for high-power, linear-mode operations through sub-band-gap triggering

K. S. Kelkar; N. E. Islam; C. M. Fessler; W. C. Nunnally

J. Appl. Phys. 98, 093102 (2005) https://doi.org/10.1063/1.2126158

Abstract

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Below band-gap optical absorption in ${Ga}_{x} {In}_{1 - x} Sb$ alloys

A. Chandola; H. J. Kim; P. S. Dutta; S. Guha; L. Gonzalez; V. Kumar

J. Appl. Phys. 98, 093103 (2005) https://doi.org/10.1063/1.2128042

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES

Density and production of NH and $N H_{2}$ in an $Ar - N H_{3}$ expanding plasma jet

P. J. van den Oever; J. H. van Helden; C. C. H. Lamers; R. Engeln; D. C. Schram; M. C. M. van de Sanden; W. M. M. Kessels

J. Appl. Phys. 98, 093301 (2005) https://doi.org/10.1063/1.2123371

Abstract

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Detection of deuterium and hydrogen using laser-induced helium gas plasma at atmospheric pressure

Koo Hendrik Kurniawan; Tjung Jie Lie; Maria Margaretha Suliyanti; Rinda Hedwig; Syahrun Nur Abdulmadjid; Marincan Pardede; Nasrullah Idris; Takao Kobayashi; Yoshihumi Kusumoto; Kiichiro Kagawa; May On Tjia

J. Appl. Phys. 98, 093302 (2005) https://doi.org/10.1063/1.2126789

Abstract

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A study of spot evolution in hot refractory cathodes of high-pressure arcs

E. Muñoz-Serrano; V. Colomer; E. Casado

J. Appl. Phys. 98, 093303 (2005) https://doi.org/10.1063/1.2121934

Abstract

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Thermal inequilibrium of atmospheric helium microwave plasma produced by an axial injection torch

R. Álvarez; A. Rodero; M. C. Quintero; A. Sola; A. Gamero; D. Ortega

J. Appl. Phys. 98, 093304 (2005) https://doi.org/10.1063/1.2121931

Abstract

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Characteristics of a low-frequency-driven ferroinductor-coupled discharge

J. Felsteiner; Ya. Z. Slutsker; P. M. Vaisberg

J. Appl. Phys. 98, 093305 (2005) https://doi.org/10.1063/1.2128474

Abstract

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Effect of helium addition on discharge characteristics in a flat fluorescent lamp

Seong-Eui Lee; Ho-Nyeon Lee; Hyoung-Bin Park; Kyo Sung Lee; Kyung Cheol Choi

J. Appl. Phys. 98, 093306 (2005) https://doi.org/10.1063/1.2127121

Abstract

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Preliminary analysis of C and H in a “Sangiran” fossil using laser-induced plasma at reduced pressure

Maria Margaretha Suliyanti; Sar Sardy; Anung Kusnowo; Marincan Pardede; Rinda Hedwig; Koo Hendrik Kurniawan; Tjung Jie Lie; Davy Putra Kurniawan; Kiichiro Kagawa

J. Appl. Phys. 98, 093307 (2005) https://doi.org/10.1063/1.2121930

Abstract

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Characterization of the plasma on dielectric fiber (velvet) cathodes

Ya. E. Krasik; J. Z. Gleizer; D. Yarmolich; A. Krokhmal; V. Ts. Gurovich; S. Efimov; J. Felsteiner; V. Bernshtam; Yu. M. Saveliev

J. Appl. Phys. 98, 093308 (2005) https://doi.org/10.1063/1.2126788

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Elasticity of planar fiber networks

X.-F. Wu; Y. A. Dzenis

J. Appl. Phys. 98, 093501 (2005) https://doi.org/10.1063/1.2123369

Abstract

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Classical nucleation theory applied to molecular orientations in vapor-deposited organic thin films

Atsushi Kubono; Ryuichi Akiyama

J. Appl. Phys. 98, 093502 (2005) https://doi.org/10.1063/1.2121933

Abstract

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Magnetic patterning of $Fe ∕ Cr ∕ Fe (001)$ trilayers by ${Ga}^{+}$ ion irradiation

S. Blomeier; B. Hillebrands; V. E. Demidov; S. O. Demokritov; B. Reuscher; A. Brodyanski; M. Kopnarski

J. Appl. Phys. 98, 093503 (2005) https://doi.org/10.1063/1.2125116

Abstract

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Enhanced modulation rate in platinum-diffused resonant-cavity light-emitting diodes

L. B. Chang; D. H. Yeh; L. Z. Hsieh; S. H. Zeng

J. Appl. Phys. 98, 093504 (2005) https://doi.org/10.1063/1.2125119

Abstract

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The compact microcrystalline Si thin film with structure uniformity in the growth direction by hydrogen dilution profile

Jinhua Gu; Meifang Zhu; Liujiu Wang; Fengzhen Liu; Bingqing Zhou; Yuqin Zhou; Kun Ding; Guohua Li

J. Appl. Phys. 98, 093505 (2005) https://doi.org/10.1063/1.2126122

Abstract

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Surface-plasmon resonance with infrared excitation: Studies of phospholipid membrane growth

Vladislav Lirtsman; Roy Ziblat; Michael Golosovsky; Dan Davidov; Roman Pogreb; Vered Sacks-Granek; Judith Rishpon

J. Appl. Phys. 98, 093506 (2005) https://doi.org/10.1063/1.2123370

Abstract

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Raman scattering of polar modes of ZnO crystallites

Leah Bergman; Xiang-Bai Chen; Jesse Huso; John L. Morrison; Heather Hoeck

J. Appl. Phys. 98, 093507 (2005) https://doi.org/10.1063/1.2126784

Abstract

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The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

V. Lebedev; F. M. Morales; H. Romanus; S. Krischok; G. Ecke; V. Cimalla; M. Himmerlich; T. Stauden; D. Cengher; O. Ambacher

J. Appl. Phys. 98, 093508 (2005) https://doi.org/10.1063/1.2126786

Abstract

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Stress relaxation in the $Ga N ∕ Al N$ multilayers grown on a mesh-patterned Si(111) substrate

C.-H. Chen; C.-M. Yeh; J. Hwang; T.-L. Tsai; C.-H. Chiang; C.-S. Chang; T.-P. Chen

J. Appl. Phys. 98, 093509 (2005) https://doi.org/10.1063/1.2122627

Abstract

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Biexciton lasing of submicron-sized ZnO particle in a Fabry-Perot cavity

Yoshiyuki Harada; Hisao Kondo; Satoshi Hashimoto

J. Appl. Phys. 98, 093510 (2005) https://doi.org/10.1063/1.2128690

Abstract

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Determination of elastic constants of a fiber-textured gold film by combining synchrotron x-ray diffraction and in situ tensile testing

D. Faurie; P.-O. Renault; E. Le Bourhis; Ph. Goudeau

J. Appl. Phys. 98, 093511 (2005) https://doi.org/10.1063/1.2126154

Abstract

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Thermodynamically complete equations of state for nickel-titanium alloy

Damian C. Swift; Johnathan G. Niemczura; Dennis L. Paisley; Randall P. Johnson; Allan Hauer; Robert E. Hackenberg; Jason Cooley; Dan Thoma; Graeme J. Ackland

J. Appl. Phys. 98, 093512 (2005) https://doi.org/10.1063/1.2103419

Abstract

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Photoconductivity of AlN films on SiC

Jongwoo Choi; Jane P. Chang

J. Appl. Phys. 98, 093513 (2005) https://doi.org/10.1063/1.2126787

Abstract

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Optoelectronic and structural characteristics of Er-doped amorphous AlN films

A. R. Zanatta; C. T. M. Ribeiro; U. Jahn

J. Appl. Phys. 98, 093514 (2005) https://doi.org/10.1063/1.2127120

Abstract

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Corrected infrared Sellmeier coefficients for gallium selenide

K. R. Allakhverdiev; T. Baykara; A. Kulibekov Gulubayov; A. A. Kaya; J. Goldstein; N. Fernelius; S. Hanna; Z. Salaeva

J. Appl. Phys. 98, 093515 (2005) https://doi.org/10.1063/1.2128694

Abstract

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Linear radiation model for phase of thermal emission spectroscopy

Ted D. Bennett; Fengling Yu

J. Appl. Phys. 98, 093516 (2005) https://doi.org/10.1063/1.2123376

Abstract

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Large lattice relaxation deep levels in neutron-irradiated $GaN$

S. Li; J. D. Zhang; C. D. Beling; K. Wang; R. X. Wang; M. Gong; C. K. Sarkar

J. Appl. Phys. 98, 093517 (2005) https://doi.org/10.1063/1.2126123

Abstract

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Yellow-to-violet up-conversion luminescence in neodymium-doped sol-gel $Ge O_{2} ∕ γ$ -glycidoxypropyltrimethoxysilane hybrid planar waveguides

Wenxiu Que; Z. Sun; X. Hu

J. Appl. Phys. 98, 093518 (2005) https://doi.org/10.1063/1.2127119

Abstract

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Emission properties of $a$ -plane GaN grown by metal-organic chemical-vapor deposition

P. P. Paskov; R. Schifano; B. Monemar; T. Paskova; S. Figge; D. Hommel

J. Appl. Phys. 98, 093519 (2005) https://doi.org/10.1063/1.2128496

Abstract

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Spectral shape analysis of ultraviolet luminescence in $n$ -type $ZnO : Ga$

T. Makino; Y. Segawa; S. Yoshida; A. Tsukazaki; A. Ohtomo; M. Kawasaki; H. Koinuma

J. Appl. Phys. 98, 093520 (2005) https://doi.org/10.1063/1.2127167

Abstract

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Concentration dependence of the optical nonlinearity in extremely doped fluorinated organic copolymers

A. Belardini; M. C. Larciprete; D. Passeri; F. Michelotti; A. Ratsimihety; A. Rousseau; F. Menchini; E. Nichelatti

J. Appl. Phys. 98, 093521 (2005) https://doi.org/10.1063/1.2130516

Abstract

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Single-photon emission from a type-B $In P ∕ Ga In P$ quantum dot

G. J. Beirne; P. Michler; M. Jetter; H. Schweizer

J. Appl. Phys. 98, 093522 (2005) https://doi.org/10.1063/1.2130887

Abstract

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Micro-Raman and photoluminescence spectroscopies of horizontal Bridgman-grown $Ag Ga {Se}_{2}$

U. N. Roy; Y. Cui; R. Miles; A. Burger; Jonathan T. Goldstein; Zane W. Bell; Donald A. Carpenter

J. Appl. Phys. 98, 093523 (2005) https://doi.org/10.1063/1.2127128

Abstract

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Acoustic-phonon transmission and thermal conductance in a double-bend quantum waveguide

Wei-Qing Huang; Ke-Qiu Chen; Z. Shuai; Lingling Wang; Wangyu Hu; B. S. Zou

J. Appl. Phys. 98, 093524 (2005) https://doi.org/10.1063/1.2127122

Abstract

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Spectroscopic properties of ${Er}^{3 +}$ transitions in $Sr W O_{4}$ crystal

Guohua Jia; Chaoyang Tu; Jianfu Li; Xiuai Lu; Zhenyu You; Zhaojie Zhu; Baichang Wu

J. Appl. Phys. 98, 093525 (2005) https://doi.org/10.1063/1.2130537

Abstract

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InGaAs quantum wells on wafer-bonded $In P ∕ Ga As$ substrates

S. Hayashi; R. Sandhu; M. Wojtowicz; G. Chen; R. Hicks; M. S. Goorsky

J. Appl. Phys. 98, 093526 (2005) https://doi.org/10.1063/1.2130889

Abstract

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Fabrication of cerium-doped ${LaNiO}_{3}$ thin films on ${LaAlO}_{3}$ (100) substrate by pulsed laser deposition

I. Chaitanya Lekshmi; Arup Gayen; D. D. Sarma; M. S. Hegde; S. P. Chockalingam; N. Chandrasekhar

J. Appl. Phys. 98, 093527 (2005) https://doi.org/10.1063/1.2128046

Abstract

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Millisecond time-range analysis of space-charge distribution and electroluminescence in insulating polymers under transient electric stress

M. Fukuma; G. Teyssedre; C. Laurent; K. Fukunaga

J. Appl. Phys. 98, 093528 (2005) https://doi.org/10.1063/1.2128050

Abstract

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ELECTRONIC STRUCTURE AND TRANSPORT

Deep-level defects introduced by 1 MeV electron radiation in AlInGaP for multijunction space solar cells

H. S. Lee; M. Yamaguchi; N. J. Ekins-Daukes; A. Khan; T. Takamoto; T. Agui; K. Kamimura; M. Kaneiwa; M. Imaizumi; T. Ohshima; H. Itoh

J. Appl. Phys. 98, 093701 (2005) https://doi.org/10.1063/1.2115095

Abstract

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Electronic properties of potassium-doped CuPc

O. V. Molodtsova; V. M. Zhilin; D. V. Vyalikh; V. Yu. Aristov; M. Knupfer

J. Appl. Phys. 98, 093702 (2005) https://doi.org/10.1063/1.2121936

Abstract

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Dielectric properties and Maxwell-Wagner relaxation of compounds $A {Cu}_{3} {Ti}_{4} O_{12}$ $(A = Ca, {Bi}_{2 ∕ 3}, Y_{2 ∕ 3}, {La}_{2 ∕ 3})$

Jianjun Liu; Chun-gang Duan; W. N. Mei; R. W. Smith; J. R. Hardy

J. Appl. Phys. 98, 093703 (2005) https://doi.org/10.1063/1.2125117

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Three-dimensional self-consistent simulation of single-qubit operation by modulation of the hyperfine interaction in phosphors-doped metal-oxide-semiconductor structure

M. Lu; D. V. Melnikov; I.-J. Chung; J.-P. Leburton

J. Appl. Phys. 98, 093704 (2005) https://doi.org/10.1063/1.2108155

Abstract

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Density of states in tritiated amorphous silicon obtained with the constant photocurrent method

Simone Pisana; Stefan Costea; Tome Kosteski; Walter T. Shmayda; Nazir P. Kherani; Stefan Zukotynski

J. Appl. Phys. 98, 093705 (2005) https://doi.org/10.1063/1.2123374

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Textured ${Ca}_{3} {Co}_{4} O_{9}$ thermoelectric oxides by thermoforging process

M. Prevel; S. Lemonnier; Y. Klein; S. Hébert; D. Chateigner; B. Ouladdiaf; J. G. Noudem

J. Appl. Phys. 98, 093706 (2005) https://doi.org/10.1063/1.2120892

Abstract

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Highly efficient organic light-emitting diodes with hole injection layer of transition metal oxides

Soo Young Kim; Jeong Min Baik; Hak Ki Yu; Jong-Lam Lee

J. Appl. Phys. 98, 093707 (2005) https://doi.org/10.1063/1.2123375

Abstract

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Deep donor-acceptor pair recombination in InGaAs-based heterostructures grown on InP substrates

T. H. Gfroerer; C. E. Gillespie; J. P. Campbell; M. W. Wanlass

J. Appl. Phys. 98, 093708 (2005) https://doi.org/10.1063/1.2126153

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Deep levels and low-frequency noise in $Al Ga As ∕ Ga As$ heterostructures

Rachid Khlil; Abdelillah El Hdiy; Yong Jin

J. Appl. Phys. 98, 093709 (2005) https://doi.org/10.1063/1.2126155

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Hot hole redistribution in impurity states of boron-doped silicon terahertz emitters

P.-C. Lv; R. T. Troeger; X. Zhang; T. N. Adam; J. Kolodzey; M. A. Odnoblyudov; I. N. Yassievich

J. Appl. Phys. 98, 093710 (2005) https://doi.org/10.1063/1.2128045

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Characterization of $a - Si : H ∕ c - Si$ interfaces by effective-lifetime measurements

M. Garín; U. Rau; W. Brendle; I. Martín; R. Alcubilla

J. Appl. Phys. 98, 093711 (2005) https://doi.org/10.1063/1.2128047

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Effects of stoichiometry on electrical, optical, and structural properties of indium nitride

J. C. Ho; P. Specht; Q. Yang; X. Xu; D. Hao; E. R. Weber

J. Appl. Phys. 98, 093712 (2005) https://doi.org/10.1063/1.2130514

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Loss of polarization in a hot-electron current through electron-electron scattering

A. C. Perrella; P. G. Mather; R. A. Buhrman

J. Appl. Phys. 98, 093713 (2005) https://doi.org/10.1063/1.2128492

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Composition and carrier-concentration dependence of the electronic structure of ${In}_{y} {Ga}_{1 - y} {As}_{1 - x} N_{x}$ films with nitrogen mole fraction of less than 0.012

Youn-Seon Kang; Lawrence H. Robins; Anthony G. Birdwell; Alexander J. Shapiro; W. Robert Thurber; Mark D. Vaudin; M. M. E. Fahmi; Damian Bryson; S. Noor Mohammad

J. Appl. Phys. 98, 093714 (2005) https://doi.org/10.1063/1.2127126

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MAGNETISM AND SUPERCONDUCTIVITY

Temperature dependence of magnetization in arrays of submicrometer Fe disks

Y. Takagaki; J. Herfort; K. H. Ploog

J. Appl. Phys. 98, 093901 (2005) https://doi.org/10.1063/1.2123373

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Effect of Al and Si substitutions on the magnetic properties of $Sm Tb {Fe}_{17}$

J. C. Ingersoll; G. Markandeyulu; V. S. Murty; K. V. S. Rama Rao

J. Appl. Phys. 98, 093902 (2005) https://doi.org/10.1063/1.2112178

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Stress deformations and structural quenching in charge-ordered ${Sm}_{0.5} {Ca}_{0.5} {MnO}_{3}$ thin films

E. Rauwel; W. Prellier; B. Mercey; S. de Brion; G. Chouteau

J. Appl. Phys. 98, 093903 (2005) https://doi.org/10.1063/1.2126157

Abstract

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Near-field magneto-optical microscopy using surface-plasmon waves and the transverse magneto-optical Kerr effect

Pei-Kuen Wei; Hsieh-Li Chou; You-Ren Cheng; Yung-Der Yao

J. Appl. Phys. 98, 093904 (2005) https://doi.org/10.1063/1.2127118

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Magnetic and electrochemical studies on ${Ni}^{2 +}$ -substituted Li–Mn spinel oxides

Tatsuya Nakamura; Yoshihiro Yamada; Mitsuharu Tabuchi

J. Appl. Phys. 98, 093905 (2005) https://doi.org/10.1063/1.2128469

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Effect of nitrogen incorporation in ferromagnetic (Ga,Mn)As epilayers

I. Oshiyama; T. Kondo; H. Munekata

J. Appl. Phys. 98, 093906 (2005) https://doi.org/10.1063/1.2128468

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Polarization-modulated magnetic soft-x-ray transmission microscopy

Bo-Sun Kang; Dong-Hyun Kim; Erik Anderson; Peter Fischer; Gyuseong Cho

J. Appl. Phys. 98, 093907 (2005) https://doi.org/10.1063/1.2128051

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Monte Carlo simulation on the resistivity and magnetization in anisotropic layered structure

X. Y. Yao; Sh. Dong; H. Zhu; H. Yu; J.-M. Liu

J. Appl. Phys. 98, 093908 (2005) https://doi.org/10.1063/1.2128048

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DIELECTRICS AND FERROELECTRICITY

Microstructural, ferroelectric, and dielectric properties of ${Bi}_{3.15} {Nd}_{0.85} {Ti}_{3} O_{12}$ ceramics

Y. J. Qi; X. Xiao; C. J. Lu; X. Y. Mao; X. B. Chen

J. Appl. Phys. 98, 094101 (2005) https://doi.org/10.1063/1.2103418

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Oxygen loss, semiconductivity, and positive temperature coefficient of resistance behavior in undoped cation-stoichiometric $Ba Ti O_{3}$ ceramics

H. Beltrán; E. Cordoncillo; P. Escribano; D. C. Sinclair; A. R. West

J. Appl. Phys. 98, 094102 (2005) https://doi.org/10.1063/1.2089158

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Martensitelike spontaneous relaxor-normal ferroelectric transformation in $Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - Pb La (Zr Ti) O_{3}$ system

Guochu Deng; Aili Ding; Guorong Li; Xinsen Zheng; Wenxiu Cheng; Pingsun Qiu; Qingrui Yin

J. Appl. Phys. 98, 094103 (2005) https://doi.org/10.1063/1.2058167

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Specific heat of $N H_{4} Br$ and $N H_{4} {Br}_{x} {Cl}_{1 - x}$ crystals close to the antiferroelectric transition

H. Yurtseven; A. Yanik

J. Appl. Phys. 98, 094104 (2005) https://doi.org/10.1063/1.1989427

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Dielectric properties of relaxor ferroelectric films

Zhongqing Wu; Wenhui Duan; Jian Wu; Bing-Lin Gu; Xiao-Wen Zhang

J. Appl. Phys. 98, 094105 (2005) https://doi.org/10.1063/1.1980538

Abstract

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Dependence of electrical properties of epitaxial $Pb (Zr, Ti) O_{3}$ thick films on crystal orientation and $Zr ∕ (Zr + Ti)$ ratio

Shintaro Yokoyama; Yoshihisa Honda; Hitoshi Morioka; Shoji Okamoto; Hiroshi Funakubo; Takashi Iijima; Hirofumi Matsuda; Keisuke Saito; Takashi Yamamoto; Hirotake Okino; Osami Sakata; Shigeru Kimura

J. Appl. Phys. 98, 094106 (2005) https://doi.org/10.1063/1.2126156

Abstract

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Diffusion of oxygen tracer into deuterium-gas-baked $Ir O_{x} ∕ Pb (Zr, Ti O_{3}) Pt$ capacitors and $Pb (Zr, Ti) O_{3} Pt$ films

J. S. Cross; K. Kurihara; H. Haneda

J. Appl. Phys. 98, 094107 (2005) https://doi.org/10.1063/1.2099508

Abstract

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Dielectric functions and electronic band structure of lead zirconate titanate thin films

Hosun Lee; Youn Seon Kang; Sang-Jun Cho; Bo Xiao; Hadis Morkoç; Tae Dong Kang; Ghil Soo Lee; Jingbo Li; Su-Huai Wei; P. G. Snyder; J. T. Evans

J. Appl. Phys. 98, 094108 (2005) https://doi.org/10.1063/1.2128043

Abstract

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Fatigue-induced evolution of domain structure in ferroelectric lead zirconate titanate ceramics investigated by piezoresponse force microscopy

V. V. Shvartsman; A. L. Kholkin; C. Verdier; D. C. Lupascu

J. Appl. Phys. 98, 094109 (2005) https://doi.org/10.1063/1.2126782

Abstract

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Inducing an antiferroelectric phase by segregating the layers of an intrinsically ferroelectric phase-only liquid crystal with linear-shaped molecules

Ji-Hoon Lee; Tong-Kun Lim

J. Appl. Phys. 98, 094110 (2005) https://doi.org/10.1063/1.2128471

Abstract

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Predicting morphotropic phase boundary locations and transition temperatures in Pb- and Bi-based perovskite solid solutions from crystal chemical data and first-principles calculations

Ilya Grinberg; Matthew R. Suchomel; Peter K. Davies; Andrew M. Rappe

J. Appl. Phys. 98, 094111 (2005) https://doi.org/10.1063/1.2128049

Abstract

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dc leakage behavior in vanadium-doped bismuth titanate thin films

Ayan Roy Chaudhuri; S. B. Krupanidhi

J. Appl. Phys. 98, 094112 (2005) https://doi.org/10.1063/1.2128476

Abstract

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Elasticity of high coupling relaxor-ferroelectric lead zinc niobate-lead titanate crystals

Ahmed Amin; Leslie E. Cross

J. Appl. Phys. 98, 094113 (2005) https://doi.org/10.1063/1.2127127

Abstract

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The effect of dopants on the microwave dielectric properties of $Ba ({Mg}_{0.33} {Ta}_{0.67}) O_{3}$ ceramics

Kuzhichalil P. Surendran; Mailadil T. Sebastian; Pezholil Mohanan; Mohan V. Jacob

J. Appl. Phys. 98, 094114 (2005) https://doi.org/10.1063/1.2127124

Abstract

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NANOSCALE SCIENCE AND DESIGN

Spin state evolution and magnetic anisotropy of elongated ${Ni}_{80} {Fe}_{20}$ nanorings

A. O. Adeyeye; N. Singh; S. Goolaup

J. Appl. Phys. 98, 094301 (2005) https://doi.org/10.1063/1.2099511

Abstract

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Electronic transport in nanostructured films of ${La}_{0.67} {Sr}_{0.33} Mn O_{3}$

Barnali Ghosh; Sohini Kar; Loveleen K. Brar; A. K. Raychaudhuri

J. Appl. Phys. 98, 094302 (2005) https://doi.org/10.1063/1.2108153

Abstract

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Phonon-assisted ballistic to diffusive crossover in silicon nanowire transistors

M. J. Gilbert; R. Akis; D. K. Ferry

J. Appl. Phys. 98, 094303 (2005) https://doi.org/10.1063/1.2120890

Abstract

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Structure and magnetic properties of Co–Cr solid-solution nanocapsules prepared by arc discharge

S. Ma; Y. B. Wang; D. Y. Geng; J. Li; Z. D. Zhang

J. Appl. Phys. 98, 094304 (2005) https://doi.org/10.1063/1.2125115

Abstract

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Room-temperature nanowire ultraviolet lasers: An aqueous pathway for zinc oxide nanowires with low defect density

Shingo Hirano; Nobuo Takeuchi; Shu Shimada; Kyosuke Masuya; Katsuhiko Ibe; Hideo Tsunakawa; Makoto Kuwabara

J. Appl. Phys. 98, 094305 (2005) https://doi.org/10.1063/1.2113418

Abstract

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Electromechanical and electro-optical properties of nanowires

A. Shik; H. E. Ruda; I. G. Currie

J. Appl. Phys. 98, 094306 (2005) https://doi.org/10.1063/1.2125467

Abstract

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Pore interconnectivity of nanoclustering silica porous films as studied by positronium time-of-flight spectroscopy

Kenji Ito; Run-Sheng Yu; Kiminori Sato; Kouichi Hirata; Yoshinori Kobayashi; Toshikazu Kurihara; Miki Egami; Hiroki Arao; Akira Nakashima; Michio Komatsu

J. Appl. Phys. 98, 094307 (2005) https://doi.org/10.1063/1.2125121

Abstract

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Void formation during early stages of passivation: Initial oxidation of iron nanoparticles at room temperature

C. M. Wang; D. R. Baer; L. E. Thomas; J. E. Amonette; Jiji Antony; You Qiang; G. Duscher

J. Appl. Phys. 98, 094308 (2005) https://doi.org/10.1063/1.2130890

Abstract

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Physical properties and inversion of conductivity type in nanocrystalline PbTe films

Z. Dashevsky; R. Kreizman; M. P. Dariel

J. Appl. Phys. 98, 094309 (2005) https://doi.org/10.1063/1.2126785

Abstract

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Size effect on the static and dynamic magnetic properties of $W$ -type barium ferrite composites: From microparticles to nanoparticles

Z. W. Li; G. Q. Lin; Linfeng Chen; Y. P. Wu; C. K. Ong

J. Appl. Phys. 98, 094310 (2005) https://doi.org/10.1063/1.2128688

Abstract

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Interband optical-absorption spectra of a finite quantum dot superlattice in a cylindrical nanowire

T. Y. Zhang; W. Zhao; J. C. Cao; G. Qasim

J. Appl. Phys. 98, 094311 (2005) https://doi.org/10.1063/1.2131190

Abstract

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Blueshifted Raman scattering and its correlation with the [110] growth direction in gallium oxide nanowires

R. Rao; A. M. Rao; B. Xu; J. Dong; S. Sharma; M. K. Sunkara

J. Appl. Phys. 98, 094312 (2005) https://doi.org/10.1063/1.2128044

Abstract

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Effect of cerium ions in an arc peripheral plasma on the growth of radial single-walled carbon nanotubes

Y. Sato; K. Motomiya; B. Jeyadevan; K. Tohji; G. Sato; H. Ishida; T. Hirata; R. Hatakeyama

J. Appl. Phys. 98, 094313 (2005) https://doi.org/10.1063/1.2128053

Abstract

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DEVICE PHYSICS

Low-acceptor-concentration GaInNAs grown by molecular-beam epitaxy for high-current $p - i - n$ solar cell applications

A. J. Ptak; D. J. Friedman; Sarah Kurtz; R. C. Reedy

J. Appl. Phys. 98, 094501 (2005) https://doi.org/10.1063/1.2113414

Abstract

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$Si$ -based magnetic tunnel transistor with single $CoFe$ base layer

S. H. Jang; Y. W. Kim; J. H. Lee; K. Y. Kim

J. Appl. Phys. 98, 094502 (2005) https://doi.org/10.1063/1.2126124

Abstract

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Doped-channel micro-Hall devices: Size and geometry effects

Vas. P. Kunets; Yu. I. Mazur; G. J. Salamo; O. Bierwagen; W. T. Masselink

J. Appl. Phys. 98, 094503 (2005) https://doi.org/10.1063/1.2128472

Abstract

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Composition, structure, and electrical characteristics of $Hf O_{2}$ gate dielectrics grown using the remote- and direct-plasma atomic layer deposition methods

Jinwoo Kim; Seokhoon Kim; Hyunseok Kang; Jihoon Choi; Hyeongtag Jeon; Mannho Cho; Kwunbum Chung; Sungkwun Back; Kyungdong Yoo; Choelhwyi Bae

J. Appl. Phys. 98, 094504 (2005) https://doi.org/10.1063/1.2121929

Abstract

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Touch sensor for micromanipulation with pipette using lead-free $(K, Na) (Nb, Ta) O_{3}$ piezoelectric ceramics

Kohei Motoo; Fumihito Arai; Toshio Fukuda; Masato Matsubara; Koichi Kikuta; Toshiaki Yamaguchi; Shin-ichi Hirano

J. Appl. Phys. 98, 094505 (2005) https://doi.org/10.1063/1.2125114

Abstract

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Field-enhanced ionization of deep-level centers as a triggering mechanism for superfast impact ionization fronts in Si structures

Pavel Rodin; Anna Rodina; Igor Grekhov

J. Appl. Phys. 98, 094506 (2005) https://doi.org/10.1063/1.2125118

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS

Pulsed laser annealing of Be-implanted GaN

H. T. Wang; L. S. Tan; E. F. Chor

J. Appl. Phys. 98, 094901 (2005) https://doi.org/10.1063/1.2120893

Abstract

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Ta penetration into template-type porous low- $k$ material during atomic layer deposition of TaN

Akira Furuya; Nobuyuki Ohtsuka; Kaori Misawa; Miyoko Shimada; Shinichi Ogawa

J. Appl. Phys. 98, 094902 (2005) https://doi.org/10.1063/1.2121937

Abstract

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X-ray photoelectron spectroscopy and structural analysis of amorphous $Si O_{x} N_{y}$ films deposited at low temperatures

P. Cova; S. Poulin; R. A. Masut

J. Appl. Phys. 98, 094903 (2005) https://doi.org/10.1063/1.2113415

Abstract

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Fault tolerance calculations for clocked quantum-dot cellular automata devices

M. Khatun; T. Barclay; I. Sturzu; P. D. Tougaw

J. Appl. Phys. 98, 094904 (2005) https://doi.org/10.1063/1.2128473

Abstract

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Role of evanescent waves in the positive and negative Goos-Hänchen shifts with left-handed material slabs

Jianbing J. Chen; Tomasz M. Grzegorczyk; Bae-Ian Wu; Jin Au Kong

J. Appl. Phys. 98, 094905 (2005) https://doi.org/10.1063/1.2128698

Abstract

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Characteristics of water-soluble polythiophene: $Ti O_{2}$ composite and its application in photovoltaics

Qiquan Qiao; Lianyong Su; James Beck; James T. McLeskey, Jr.

J. Appl. Phys. 98, 094906 (2005) https://doi.org/10.1063/1.2130517

Abstract

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Synthesis of diamondlike carbon particles in/on a water substrate by laser irradiation

Hirofumi Hidai; Hitoshi Tokura

J. Appl. Phys. 98, 094907 (2005) https://doi.org/10.1063/1.2126783

Abstract

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Nucleation and growth of Pd clusters on (001) $Sr Ti O_{3}$ ⁠: Determination of diffusion and adsorption energies from cluster densities

G. Richter; T. Wagner

J. Appl. Phys. 98, 094908 (2005) https://doi.org/10.1063/1.2127117

Abstract

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Change in spectra of mobility of small atmospheric ions during convection and diffusion

Toshiro Maruyama; Makoto Wakabayashi

J. Appl. Phys. 98, 094909 (2005) https://doi.org/10.1063/1.2127123

Abstract

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Transverse and longitudinal space-charge-induced broadenings of ultrafast electron packets

S. Collin; M. Merano; M. Gatri; S. Sonderegger; P. Renucci; J.-D. Ganière; B. Deveaud

J. Appl. Phys. 98, 094910 (2005) https://doi.org/10.1063/1.2128494

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COMMUNICATIONS

A unified decay formula for luminescence decays

Byung Mook Weon; Jong-Lam Lee; Jung Ho Je

J. Appl. Phys. 98, 096101 (2005) https://doi.org/10.1063/1.2126120

Abstract

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Effect of deposition temperature on surface acoustic wave velocity of aluminum nitride films determined by Brillouin spectroscopy

M. B. Assouar; R. J. Jiménez Riobóo; M. Vila; P. Alnot

J. Appl. Phys. 98, 096102 (2005) https://doi.org/10.1063/1.2121927

Abstract

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Growth and properties of nanocrystalline germanium films

Xuejun Niu; Vikram L. Dalal

J. Appl. Phys. 98, 096103 (2005) https://doi.org/10.1063/1.2127125

Abstract

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Extraction of electric power from plasma sources using difference in plasma-electrode interactions

Yasuyuki Yagi

J. Appl. Phys. 98, 096104 (2005) https://doi.org/10.1063/1.2126119

Abstract

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Stability and electronic structure of ordered ${Si}_{0.75} {Ge}_{0.25} C$ alloy

Z. W. Chen; M. Y. Lv; R. P. Liu

J. Appl. Phys. 98, 096105 (2005) https://doi.org/10.1063/1.2126780

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Electronic and optical properties of $α$ ⁠, $γ$ ⁠, and $β$ phases of ${MgH}_{2}$ ⁠: A first-principles $G W$ investigation

C. Moysés Araújo; S. Lebègue; O. Eriksson; B. Arnaud; M. Alouani; R. Ahuja

J. Appl. Phys. 98, 096106 (2005) https://doi.org/10.1063/1.2128041

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC STRUCTURE AND TRANSPORT

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMUNICATIONS

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