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LASERS, OPTICS, AND OPTOELECTRONICS

Fabrication and optical characterization of hexagonal photonic crystal microcavities in InP-based membranes containing $InAs ∕ InP$ quantum dots

Dan Dalacu; Simon Frédérick; Alexei Bogdanov; Philip J. Poole; Geof C. Aers; Robin L. Williams; Murray W. McCutcheon; Jeff F. Young

J. Appl. Phys. 98, 023101 (2005) https://doi.org/10.1063/1.1984078

Abstract

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A method to enhance the data transfer rate of eutectic Sb-Te phase-change recording media

Tung-Ti Yeh; T.-E. Hsieh; Han-Ping D. Shieh

J. Appl. Phys. 98, 023102 (2005) https://doi.org/10.1063/1.1957132

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${Cr}^{3 +} \to {Nd}^{3 +}$ energy transfer in the $Y {Al}_{3} {(B O_{3})}_{4}$ nonlinear laser crystal

E. Bovero; E. Cavalli; D. Jaque; J. García Solé; A. Speghini; M. Bettinelli

J. Appl. Phys. 98, 023103 (2005) https://doi.org/10.1063/1.1948531

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Phase-only modulation using a normal-mode liquid-crystal gel

Hongwen Ren; Janet R. Wu; Shin-Tson Wu

J. Appl. Phys. 98, 023104 (2005) https://doi.org/10.1063/1.1989436

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Influence of grating characteristics on the operation of circular-grating distributed-feedback polymer lasers

G. A. Turnbull; A. Carleton; G. F. Barlow; A. Tahraouhi; T. F. Krauss; K. A. Shore; I. D. W. Samuel

J. Appl. Phys. 98, 023105 (2005) https://doi.org/10.1063/1.1935131

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Parametric study of a highly efficient chemical oxygen-iodine laser with supersonic mixing of iodine and oxygen

V. Rybalkin; A. Katz; B. D. Barmashenko; S. Rosenwaks

J. Appl. Phys. 98, 023106 (2005) https://doi.org/10.1063/1.1988969

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Terahertz gain on intersubband transitions in multilayer delta-doped $p - Ge$ structures

M. V. Dolguikh; A. V. Muravjov; R. E. Peale; M. Klimov; O. A. Kuznetsov; E. A. Uskova

J. Appl. Phys. 98, 023107 (2005) https://doi.org/10.1063/1.1989430

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Chromatic dispersion compensators via highly dispersive photonic crystals

S. Y. Yang; C. T. Chang

J. Appl. Phys. 98, 023108 (2005) https://doi.org/10.1063/1.1978990

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES

Optimization of ultraviolet emission and chemical species generation from a pulsed dielectric barrier discharge at atmospheric pressure

Xinpei Lu; Mounir Laroussi

J. Appl. Phys. 98, 023301 (2005) https://doi.org/10.1063/1.1980530

Abstract

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Calculation of two-dimensional plasma sheath with application to radial dust oscillations

T. E. Sheridan

J. Appl. Phys. 98, 023302 (2005) https://doi.org/10.1063/1.1957127

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A model of the two-stage Hall thruster discharge

E. Ahedo; F. I. Parra

J. Appl. Phys. 98, 023303 (2005) https://doi.org/10.1063/1.1957129

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Influence of the skin effect and current risetime on the fragmentation of wires by pulsed currents

D. P. Wall; J. E. Allen; S. Molokov

J. Appl. Phys. 98, 023304 (2005) https://doi.org/10.1063/1.1924871

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Plasma jet emission in fast-pulsed capillary discharges

L. S. Caballero; H. Chuaqui; M. Favre; I. Mitchell; E. Wyndham

J. Appl. Phys. 98, 023305 (2005) https://doi.org/10.1063/1.1984077

Abstract

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Periodic formation and propagation of double layers in the expanding chamber of an inductive discharge operating in $Ar ∕ {SF}_{6}$ mixtures

N. Plihon; C. S. Corr; P. Chabert; J.-L. Raimbault

J. Appl. Phys. 98, 023306 (2005) https://doi.org/10.1063/1.1947387

Abstract

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Actinometry of inductively coupled ${Cl}_{2} ∕ N_{2}$ plasmas for dry etching of GaAs

Tobias Brückl; Heribert Zull

J. Appl. Phys. 98, 023307 (2005) https://doi.org/10.1063/1.1994932

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Numerical simulation of dual frequency etching reactors: Influence of the external process parameters on the plasma characteristics

V. Georgieva; A. Bogaerts

J. Appl. Phys. 98, 023308 (2005) https://doi.org/10.1063/1.1989439

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Internal electric-field and segregation effects on luminescence properties of quantum wells

G. Gonzalez de la Cruz; A. Calderon Arenas; H. Herrera

J. Appl. Phys. 98, 023501 (2005) https://doi.org/10.1063/1.1954889

Abstract

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Dislocation-indenter interaction in nanoindentation

M. Ravi Shankar; Alexander H. King; Srinivasan Chandrasekar

J. Appl. Phys. 98, 023502 (2005) https://doi.org/10.1063/1.1968443

Abstract

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Quantitative coverage and stability of hydrogen-passivation layers on HF-etched ${Si}_{(1 - x)} {Ge}_{x}$ surfaces

Markus Wilde; Katsuyuki Fukutani; Shinji Koh; Kentarou Sawano; Yasuhiro Shiraki

J. Appl. Phys. 98, 023503 (2005) https://doi.org/10.1063/1.1978968

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Structural, electrical, and optical properties of transparent gallium oxide thin films grown by plasma-enhanced atomic layer deposition

F. K. Shan; G. X. Liu; W. J. Lee; G. H. Lee; I. S. Kim; B. C. Shin

J. Appl. Phys. 98, 023504 (2005) https://doi.org/10.1063/1.1980535

Abstract

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Microdamage in polycrystalline ceramics under dynamic compression and tension

K. S. Zhang; D. Zhang; R. Feng; M. S. Wu

J. Appl. Phys. 98, 023505 (2005) https://doi.org/10.1063/1.1944908

Abstract

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Annealing properties of open volumes in ${HfSiO}_{x}$ and ${HfAlO}_{x}$ gate dielectrics studied using monoenergetic positron beams

A. Uedono; K. Ikeuchi; K. Yamabe; T. Ohdaira; M. Muramatsu; R. Suzuki; A. S. Hamid; T. Chikyow; K. Torii; K. Yamada

J. Appl. Phys. 98, 023506 (2005) https://doi.org/10.1063/1.1977194

Abstract

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The influence of defects and postdeposition treatments on the free carrier density in lightly phosphorus-doped large-grained polycrystalline silicon films

Axel Straub; Daniel Inns; Mason L. Terry; Raphael Gebs; Armin G. Aberle

J. Appl. Phys. 98, 023507 (2005) https://doi.org/10.1063/1.1977197

Abstract

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Photoreflectance and surface photovoltage spectroscopy of beryllium-doped $Ga As ∕ Al As$ multiple quantum wells

B. Čechavičius; J. Kavaliauskas; G. Krivaitė; D. Seliuta; G. Valušis; M. P. Halsall; M. J. Steer; P. Harrison

J. Appl. Phys. 98, 023508 (2005) https://doi.org/10.1063/1.1978970

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Doping of spray-pyrolyzed ZnO thin films through direct diffusion of indium: Structural optical and electrical studies

P. M. Ratheesh Kumar; C. Sudha Kartha; K. P. Vijayakumar

J. Appl. Phys. 98, 023509 (2005) https://doi.org/10.1063/1.1985967

Abstract

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Molecular-beam epitaxial growth and characteristics of highly uniform $In As ∕ Ga As$ quantum dot layers

Zetian Mi; Pallab Bhattacharya

J. Appl. Phys. 98, 023510 (2005) https://doi.org/10.1063/1.1985969

Abstract

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Zn-doped GaSb epitaxial film absorption coefficients at terahertz frequencies and detector applications

Z. G. Hu; A. G. U. Perera; Y. Paltiel; A. Raizman; A. Sher

J. Appl. Phys. 98, 023511 (2005) https://doi.org/10.1063/1.1977195

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Investigation of the poly[2-methoxy-5-(⁠ $2^{'}$ -ethyl-hexyloxy)-1,4-phenylene vinylene]∕indium tin oxide interface using photoemission spectroscopy

B. Lägel; M. M. Beerbom; B. V. Doran; M. Lägel; A. Cascio; R. Schlaf

J. Appl. Phys. 98, 023512 (2005) https://doi.org/10.1063/1.1949276

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Investigation of composition fluctuations in GaN:Mg using optical transmission spectroscopy, near-field scanning optical microscopy, and scanning Kelvin probe microscopy

B. Han; B. W. Wessels; M. P. Ulmer

J. Appl. Phys. 98, 023513 (2005) https://doi.org/10.1063/1.1948527

Abstract

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Growth stresses and cracking in GaN films on (111) Si grown by metal-organic chemical-vapor deposition. I. AlN buffer layers

Srinivasan Raghavan; Joan M. Redwing

J. Appl. Phys. 98, 023514 (2005) https://doi.org/10.1063/1.1978991

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Growth stresses and cracking in GaN films on (111) Si grown by metalorganic chemical vapor deposition. II. Graded AlGaN buffer layers

Srinivasan Raghavan; Joan Redwing

J. Appl. Phys. 98, 023515 (2005) https://doi.org/10.1063/1.1978992

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Electrochemically controlled transport of lithium through ultrathin $Si O_{2}$

Nava Ariel; Gerbrand Ceder; Donald R. Sadoway; Eugene A. Fitzgerald

J. Appl. Phys. 98, 023516 (2005) https://doi.org/10.1063/1.1989431

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Nitrogen effects on generation and velocity of dislocations in Czochralski-grown silicon

I. Yonenaga

J. Appl. Phys. 98, 023517 (2005) https://doi.org/10.1063/1.1990259

Abstract

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Convex-shaped decay curve of carriers in a vertically coupled $In As ∕ Ga As$ quantum dot

J. S. Yim; Y. D. Jang; D. Lee; H. G. Lee; S. K. Noh

J. Appl. Phys. 98, 023518 (2005) https://doi.org/10.1063/1.1994940

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Molecular modeling of water diffusion in amorphous SiC

Haiying He; Mrinalini Deshpande; Richard E. Brown; Ravindra Pandey; Udo C. Pernisz

J. Appl. Phys. 98, 023519 (2005) https://doi.org/10.1063/1.1968439

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Acoustic emission and nonergodic states of the electric-field-induced-phase transition of $Pb {Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3} O_{3}$

E. Dul’kin; M. Roth; B. Dkhil; J. M. Kiat

J. Appl. Phys. 98, 023520 (2005) https://doi.org/10.1063/1.1980527

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Unfaulting of dislocation loops in the GaInNAs alloy: An estimation of the stacking fault energy

M. Herrera; D. González; J. G. Lozano; R. García; M. Hopkinson; H. Y. Liu; M. Gutierrez; P. Navaretti

J. Appl. Phys. 98, 023521 (2005) https://doi.org/10.1063/1.1988976

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High nitrogen incorporation in GaAsN epilayers grown by chemical beam epitaxy using radio-frequency plasma source

M.-A. Pinault; A. Freundlich; J. A. H. Coaquira; A. Fotkatzikis

J. Appl. Phys. 98, 023522 (2005) https://doi.org/10.1063/1.1996853

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Controlling fluorescence lifetime of rare-earth element in amorphous inorganic solids via very small compositional adjustments

Yong Gyu Choi; Richard J. Curry; Bong Je Park; Kyong Hon Kim; Jong Heo; Dan W. Hewak

J. Appl. Phys. 98, 023523 (2005) https://doi.org/10.1063/1.1996854

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Simple cubic three-dimensional photonic crystals based on macroporous silicon and anisotropic posttreatment

Sven Matthias; Frank Müller; Ulrich Gösele

J. Appl. Phys. 98, 023524 (2005) https://doi.org/10.1063/1.1993752

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ELECTRONIC STRUCTURE AND TRANSPORT

Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in $Si O_{2}$ glasses

R. P. Wang; N. Tai; K. Saito; A. J. Ikushima

J. Appl. Phys. 98, 023701 (2005) https://doi.org/10.1063/1.1980536

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Effect of thermal annealing on the interband transitions and activation energies of $Cd Te ∕ Zn Te$ quantum dots

H. S. Lee; K. H. Lee; H. L. Park; T. W. Kim; Y.-H. Kim

J. Appl. Phys. 98, 023702 (2005) https://doi.org/10.1063/1.1968440

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Thermally activated carrier transfer processes in $In Ga N ∕ Ga N$ multi-quantum-well light-emitting devices

C. L. Yang; L. Ding; J. N. Wang; K. K. Fung; W. K. Ge; H. Liang; L. S. Yu; Y. D. Qi; D. L. Wang; Z. D. Lu; K. M. Lau

J. Appl. Phys. 98, 023703 (2005) https://doi.org/10.1063/1.1978967

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Charge trap levels in sulfur-doped chemical-vapor-deposited diamond with applications to ultraviolet dosimetry

E. Trajkov; S. Prawer; J. E. Butler; S. M. Hearne

J. Appl. Phys. 98, 023704 (2005) https://doi.org/10.1063/1.1984079

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Electronic structure of silicon quantum dots: Calculations of energy-gap redshifts due to oxidation

Masahiko Nishida

J. Appl. Phys. 98, 023705 (2005) https://doi.org/10.1063/1.1985978

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Electrical transport properties of aluminum-implanted 4H–SiC

J. Pernot; S. Contreras; J. Camassel

J. Appl. Phys. 98, 023706 (2005) https://doi.org/10.1063/1.1978987

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Molecular and solid-state (8-hydroxy-quinoline)aluminum interaction with magnesium: A first-principles study

S. Meloni; A. Palma; A. Kahn; J. Schwartz; R. Car

J. Appl. Phys. 98, 023707 (2005) https://doi.org/10.1063/1.1953869

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Irradiation effects on the compensation of semi-insulating GaAs for particle detector applications

Anna Cavallini; Laura Polenta

J. Appl. Phys. 98, 023708 (2005) https://doi.org/10.1063/1.1978989

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Formation of two-dimensional electron gases in polytypic SiC heterostructures

V. M. Polyakov; F. Schwierz

J. Appl. Phys. 98, 023709 (2005) https://doi.org/10.1063/1.1984070

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Study of structural-, compositional-, and thickness-dependent thermoelectric and electrical properties of ${Bi}_{93} {Sb}_{7}$ alloy thin films

Ramesh Chandra Mallik; V. Damodara Das

J. Appl. Phys. 98, 023710 (2005) https://doi.org/10.1063/1.1957126

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Effects of nitrogen, oxygen, and moisture on the electron transport in tris(8-hydroxyquinoline) aluminum

H. H. Fong; S. K. So

J. Appl. Phys. 98, 023711 (2005) https://doi.org/10.1063/1.1990258

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Effects of strain relaxation on the electronic properties of epitaxial ${Sr}_{2} {FeMoO}_{6}$ grown by pulsed laser deposition on ${SrTiO}_{3}$ (001)

T. Fix; D. Stoeffler; S. Colis; C. Ulhaq; G. Versini; J. P. Vola; F. Huber; A. Dinia

J. Appl. Phys. 98, 023712 (2005) https://doi.org/10.1063/1.1925761

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Effects of annealing temperature on the degree of inhomogeneity of nickel-silicide/SiC Schottky barrier

L. Calcagno; A. Ruggiero; F. Roccaforte; F. La Via

J. Appl. Phys. 98, 023713 (2005) https://doi.org/10.1063/1.1978969

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Positive and negative temperature dependences of electron-impact ionization in ${In}_{0.53} {Ga}_{0.47} As$

K. Y. Choo; D. S. Ong

J. Appl. Phys. 98, 023714 (2005) https://doi.org/10.1063/1.1993755

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Structural, electrical, optical, and mechanical characterizations of decorative $Zr O_{x} N_{y}$ thin films

P. Carvalho; F. Vaz; L. Rebouta; L. Cunha; C. J. Tavares; C. Moura; E. Alves; A. Cavaleiro; Ph. Goudeau; E. Le Bourhis; J. P. Rivière; J. F. Pierson; O. Banakh

J. Appl. Phys. 98, 023715 (2005) https://doi.org/10.1063/1.1990261

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Time-resolved spin filtering in semiconductor symmetric resonant barrier structures

Leo Yu; O. Voskoboynikov

J. Appl. Phys. 98, 023716 (2005) https://doi.org/10.1063/1.1994945

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MAGNETISM AND SUPERCONDUCTIVITY

Magnetic anisotropy of epitaxial $Mg O ∕ Fe ∕ Mg O$ films studied by network analyzer ferromagnetic resonance

G. Counil; Joo-Von Kim; T. Devolder; P. Crozat; C. Chappert; A. Cebollada

J. Appl. Phys. 98, 023901 (2005) https://doi.org/10.1063/1.1968442

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Observation of switching of magnetic particle arrays with weak dipole interaction field effects

David W. Abraham; Y. Lu

J. Appl. Phys. 98, 023902 (2005) https://doi.org/10.1063/1.1954892

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Magnetic switching of ferromagnetic thin films under thermal perturbation

Di Liu; Carlos Garcia-Cervera

J. Appl. Phys. 98, 023903 (2005) https://doi.org/10.1063/1.1988971

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Magnetic force microscopy investigation of domain structures in $Fe – x at. %$ Ga single crystals $(12 < x < 25)$

Feiming Bai; Jiefang Li; D. Viehland; D. Wu; T. A. Lograsso

J. Appl. Phys. 98, 023904 (2005) https://doi.org/10.1063/1.1978971

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Magnetic levitation using magnesium diboride

M. Zeisberger; W. Gawalek; G. Giunchi

J. Appl. Phys. 98, 023905 (2005) https://doi.org/10.1063/1.1985972

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Microstructure and magnetoresistance of sputtered bismuth thin films upon annealing

Joonyeon Chang; Hijung Kim; Junhyun Han; M. H. Jeon; W. Y. Lee

J. Appl. Phys. 98, 023906 (2005) https://doi.org/10.1063/1.1989433

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Intermodulation response of superconducting filters

M. I. Salkola

J. Appl. Phys. 98, 023907 (2005) https://doi.org/10.1063/1.1977434

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Investigation of the precipitation kinetics and changes of magnetic anisotropy of iron particles in ion-irradiated silica gel films by means of electron-spin resonance

J. C. Pivin; S. Esnouf; F. Singh; D. K. Avasthi

J. Appl. Phys. 98, 023908 (2005) https://doi.org/10.1063/1.1980528

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Growth of GaMnAs under near-stoichiometric conditions

V. Avrutin; D. Humienik; S. Frank; A. Koeder; W. Schoch; W. Limmer; R. Sauer; A. Waag

J. Appl. Phys. 98, 023909 (2005) https://doi.org/10.1063/1.1991971

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Superconducting and transport properties of $Y {Ba}_{2} {Cu}_{3} O_{7} ∕ {La}_{0.7} {Sr}_{0.3} Mn O_{3}$ bilayers

J. G. Lin; S. L. Cheng; C. R. Chang; D. Y. Xing

J. Appl. Phys. 98, 023910 (2005) https://doi.org/10.1063/1.1991973

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Nonlinear effects and Joule heating in $I - V$ curves in manganites

Silvana Mercone; Raymond Frésard; Vincent Caignaert; Christine Martin; Damien Saurel; Charles Simon; Gilles André; Philippe Monod; François Fauth

J. Appl. Phys. 98, 023911 (2005) https://doi.org/10.1063/1.1993750

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DIELECTRICS AND FERROELECTRICITY

Charge-carrier trapping in polyfluorene-type conjugated polymers

A. Kadashchuk; R. Schmechel; H. von Seggern; U. Scherf; A. Vakhnin

J. Appl. Phys. 98, 024101 (2005) https://doi.org/10.1063/1.1953870

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Effect of temperature on grain size, phase composition, and electrical properties in the relaxor-ferroelectric-system $Pb ({Ni}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - Pb (Zr, Ti) O_{3}$

S. Wagner; D. Kahraman; H. Kungl; M. J. Hoffmann; C. Schuh; K. Lubitz; H. Murmann-Biesenecker; J. A. Schmid

J. Appl. Phys. 98, 024102 (2005) https://doi.org/10.1063/1.1968427

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Effects of stress and electric field on the electromechanical properties of $Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - 0.32 Pb Ti O_{3}$ single crystals

Q. Wan; C. Chen; Y. P. Shen

J. Appl. Phys. 98, 024103 (2005) https://doi.org/10.1063/1.1985979

Abstract

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Modeling of anomalous hysteresis behavior of compositionally graded ferroelectric films at low fields

C. K. Wong; F. G. Shin

J. Appl. Phys. 98, 024104 (2005) https://doi.org/10.1063/1.1985970

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Substrate-bias-dependent dielectric breakdown in ultrathin-oxide $p$ -metal-oxide-semiconductor field-effect transistors

Sinclair Chiang; M. F. Lu; S. Huang-Lu; S. C. Chien; Tahui Wang

J. Appl. Phys. 98, 024105 (2005) https://doi.org/10.1063/1.1980529

Abstract

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Dielectric properties of ${Pb}_{0.5} {Ca}_{0.5} {TiO}_{3}$ thin films

J. Mendiola; R. Jiménez; P. Ramos; C. Alemany; I. Bretos; M. L. Calzada

J. Appl. Phys. 98, 024106 (2005) https://doi.org/10.1063/1.1984072

Abstract

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In-plane anisotropy in the microwave dielectric properties of ${SrTiO}_{3}$ films

Wontae Chang; Steven W. Kirchoefer; Jeffrey A. Bellotti; Syed B. Qadri; Jeffrey M. Pond; Jeffrey H. Haeni; Darrell G. Schlom

J. Appl. Phys. 98, 024107 (2005) https://doi.org/10.1063/1.1984074

Abstract

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Mechanism of Cu diffusion in porous low- $κ$ dielectrics

Oscar R. Rodriguez; Woojin Cho; Ravi Saxena; Joel L. Plawsky; William N. Gill

J. Appl. Phys. 98, 024108 (2005) https://doi.org/10.1063/1.1954869

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Collective domain-wall pinning of oxygen vacancies in bismuth titanate ceramics

Wei Li; Aiping Chen; Xiaomei Lu; Jinsong Zhu

J. Appl. Phys. 98, 024109 (2005) https://doi.org/10.1063/1.1984071

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The effects of neodymium content and site occupancy on spontaneous polarization of epitaxial $({Bi}_{4 - x} {Nd}_{x}) {Ti}_{3} O_{12}$ films

Takayuki Watanabe; Hiroshi Funakubo; Minoru Osada; Hiroshi Uchida; Isao Okada

J. Appl. Phys. 98, 024110 (2005) https://doi.org/10.1063/1.1984073

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Mechanisms of imprint effect on ferroelectric thin films

Y. Zhou; H. K. Chan; C. H. Lam; F. G. Shin

J. Appl. Phys. 98, 024111 (2005) https://doi.org/10.1063/1.1984075

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Optical properties of ferroelectric nanocrystal-containing polymer ${BaTiO}_{3} ∕ polycarbonate$ films

W. C. Liu; A. D. Li; J. Tan; C. L. Mak; K. H. Wong; D. Wu; Nai-Ben Ming

J. Appl. Phys. 98, 024112 (2005) https://doi.org/10.1063/1.1984076

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Electrostrictive effect in lead-free relaxor $K_{0.5} {Na}_{0.5} Nb O_{3} - Sr Ti O_{3}$ ceramic system

V. Bobnar; B. Malič; J. Holc; M. Kosec; R. Steinhausen; H. Beige

J. Appl. Phys. 98, 024113 (2005) https://doi.org/10.1063/1.1989438

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Frequency-dependent capacitance-voltage hysteresis in ferroelectric liquid crystals: An effect of the frequency dependence of dielectric biaxiality

Muklesur Rahman; S. K. Kundu; B. K. Chaudhuri; A. Yoshizawa

J. Appl. Phys. 98, 024114 (2005) https://doi.org/10.1063/1.1988975

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Saturated domain switching textures and strains in ferroelastic ceramics

Jacob L. Jones; Mark Hoffman; Keith J. Bowman

J. Appl. Phys. 98, 024115 (2005) https://doi.org/10.1063/1.1988978

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Local symmetry breaking in ${Pb}_{x} {Sr}_{1 - x} Ti O_{3}$ ceramics and composites studied by Raman spectroscopy

M. Jain; Yu. I. Yuzyuk; R. S. Katiyar; Y. Somiya; A. S. Bhalla

J. Appl. Phys. 98, 024116 (2005) https://doi.org/10.1063/1.1989434

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Enhancement of the 90° domain-wall mobility in sol-gel $(Pb, La) Ti O_{3}$ thin films prepared by multiple deposition and crystallization

R. Poyato; M. Algueró; M. L. Calzada; L. Pardo

J. Appl. Phys. 98, 024117 (2005) https://doi.org/10.1063/1.1994936

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NANOSCALE SCIENCE AND DESIGN

Self-assembly of periodic ZnO/C multilayers on Zn nanowires

K. W. Kwong; Quan Li

J. Appl. Phys. 98, 024301 (2005) https://doi.org/10.1063/1.1957133

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Fe-silicide nanostructures on $Si (111) - \sqrt{3} \times \sqrt{3} - Ag$

K. Vanormelingen; K. Paredis; A. Vantomme

J. Appl. Phys. 98, 024302 (2005) https://doi.org/10.1063/1.1968441

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Aerosol nanoparticles in the ${Fe}_{1 - x} {Cr}_{x}$ system: Room-temperature stabilization of the $σ$ phase and $σ \to α$ -phase transformation

M. Gich; E. A. Shafranovsky; A. Roig; A. Ślawska-Waniewska; K. Racka; Ll. Casas; Yu. I. Petrov; E. Molins; M. F. Thomas

J. Appl. Phys. 98, 024303 (2005) https://doi.org/10.1063/1.1946907

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Near-field scanning optical microscopy of ZnO nanopatterns fabricated by micromolding in capillaries

S. K. Donthu; Z. Pan; G. S. Shekhawat; V. P. Dravid; B. Balakrisnan; S. Tripathy

J. Appl. Phys. 98, 024304 (2005) https://doi.org/10.1063/1.1949712

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Model for nitridation of nanoscale ${SiO}_{2}$ thin films in pulsed inductively coupled $N_{2}$ plasma

Shahid Rauf; Sangwoo Lim; Peter L. G. Ventzek

J. Appl. Phys. 98, 024305 (2005) https://doi.org/10.1063/1.1949272

Abstract

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Effect of Ti on the optical properties of Ag nanocrystals in silica

R. H. Magruder, III; Al Meldrum

J. Appl. Phys. 98, 024306 (2005) https://doi.org/10.1063/1.1949274

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Structural characterization of Cu nanocrystals formed in $Si O_{2}$ by high-energy ion-beam synthesis

B. Johannessen; P. Kluth; C. J. Glover; G. de M. Azevedo; D. J. Llewellyn; G. J. Foran; M. C. Ridgway

J. Appl. Phys. 98, 024307 (2005) https://doi.org/10.1063/1.1980533

Abstract

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Long-range order parameter of single $L 1_{0} - Fe Pd$ nanoparticle determined by nanobeam electron diffraction: Particle size dependence of the order parameter

Kazuhisa Sato; Yoshihiko Hirotsu; Hirotaro Mori; Zhouguang Wang; Tsukasa Hirayama

J. Appl. Phys. 98, 024308 (2005) https://doi.org/10.1063/1.1985973

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Effects of crystallite size distribution on the Raman-scattering profiles of silicon nanostructures

Md. Nazrul Islam; Asima Pradhan; Satyendra Kumar

J. Appl. Phys. 98, 024309 (2005) https://doi.org/10.1063/1.1980537

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Photoluminescence of highly porous nanostructured Si-based thin films deposited by pulsed laser ablation

D.-Q. Yang; V. Ethier; E. Sacher; M. Meunier

J. Appl. Phys. 98, 024310 (2005) https://doi.org/10.1063/1.1985971

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Raman spectroscopy of single-wall carbon nanotubes and graphite irradiated by $γ$ rays

Martin Hulman; Viera Skákalová; Siegmar Roth; Hans Kuzmany

J. Appl. Phys. 98, 024311 (2005) https://doi.org/10.1063/1.1984080

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Fabrication, morphology, structure, and photoluminescence of ZnS and CdS nanoribbons

X. T. Zhou; P.-S. G. Kim; T. K. Sham; S. T. Lee

J. Appl. Phys. 98, 024312 (2005) https://doi.org/10.1063/1.1988974

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Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering

H. Colder; R. Rizk; M. Morales; P. Marie; J. Vicens; I. Vickridge

J. Appl. Phys. 98, 024313 (2005) https://doi.org/10.1063/1.1985975

Abstract

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Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

Daniel J. Lichtenwalner; Jesse S. Jur; Angus I. Kingon; Melody P. Agustin; Yan Yang; Susanne Stemmer; Lyudmila V. Goncharova; Torgny Gustafsson; Eric Garfunkel

J. Appl. Phys. 98, 024314 (2005) https://doi.org/10.1063/1.1988967

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Defects and morphological changes in nanothin Cu films on polycrystalline Mo analyzed by thermal helium desorption spectrometry

V. Venugopal; L. J. Seijbel; B. J. Thijsse

J. Appl. Phys. 98, 024315 (2005) https://doi.org/10.1063/1.1925765

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Enhancement of $1.54 - μ m$ emission from Er-doped sol-gel $Si O_{2}$ films by Au nanoparticles doping

Masanori Fukushima; Nobuto Managaki; Minoru Fujii; Hisao Yanagi; Shinji Hayashi

J. Appl. Phys. 98, 024316 (2005) https://doi.org/10.1063/1.1990257

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Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices

L. Fitting; M. E. Ware; J. R. Haywood; Jennifer J. H. Walter; R. J. Nemanich

J. Appl. Phys. 98, 024317 (2005) https://doi.org/10.1063/1.1993751

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DEVICE PHYSICS

An aluminum-gate metal-oxide-silicon capacitor with a tunnel-thin oxide under the bidirectional electric stress

A. El Hdiy; R. Khlil; Y. Jin; S. E. Tyaginov; A. F. Shulekin; M. I. Vexler

J. Appl. Phys. 98, 024501 (2005) https://doi.org/10.1063/1.1958167

Abstract

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Temperature and electric-field dependences of hole mobility in light-emitting diodes based on poly [2-methoxy-5-(2-ethylhexoxy)-1,4-phenylene vinylene]

Amit Kumar; P. K. Bhatnagar; P. C. Mathur; M. Husain; Sandip Sengupta; Jayant Kumar

J. Appl. Phys. 98, 024502 (2005) https://doi.org/10.1063/1.1968445

Abstract

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Soft breakdown of hafnium oxynitride gate dielectrics

Jer Chyi Wang; De Ching Shie; Tan Fu Lei; Chung Len Lee

J. Appl. Phys. 98, 024503 (2005) https://doi.org/10.1063/1.1977198

Abstract

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Valence band structure of ultrathin silicon and germanium channels in metal-oxide-semiconductor field-effect transistors

Tony Low; M. F. Li; Y. C. Yeo; W. J. Fan; S. T. Ng; D. L. Kwong

J. Appl. Phys. 98, 024504 (2005) https://doi.org/10.1063/1.1948528

Abstract

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Physics of patterned magnetic medium recording: Design considerations

Chunsheng E; Darren Smith; Jack Wolfe; Dieter Weller; Sakhrat Khizroev; Dmitri Litvinov

J. Appl. Phys. 98, 024505 (2005) https://doi.org/10.1063/1.1977192

Abstract

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

E. P. Nakhmedov; K. Wieczorek; H. Burghardt; C. Radehaus

J. Appl. Phys. 98, 024506 (2005) https://doi.org/10.1063/1.1985976

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Integration of ${Ba}_{1 - x} {Sr}_{x} {TiO}_{3}$ -based active thin films with silicon-compatible materials and process science protocols to enable affordable on-the-move communications technologies

M. W. Cole; W. D. Nothwang; J. D. Demaree; S. Hirsch

J. Appl. Phys. 98, 024507 (2005) https://doi.org/10.1063/1.1977201

Abstract

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A porous silicon diode as a source of low-energy free electrons at milli-Kelvin temperatures

S. Pilla; B. Naberhuis; J. Goodkind

J. Appl. Phys. 98, 024508 (2005) https://doi.org/10.1063/1.1988972

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Carrier recombination and differential diode quality factors in the dark forward bias current-voltage characteristics of $a ‐ Si : H$ solar cells

J. Deng; C. R. Wronski

J. Appl. Phys. 98, 024509 (2005) https://doi.org/10.1063/1.1990267

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Orthogonal shape/intrinsic anisotropy toggle-mode magnetoresistance random access memory

S.-Y. Wang; H. Fujiwara

J. Appl. Phys. 98, 024510 (2005) https://doi.org/10.1063/1.1985968

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INTERDISCIPLINARY AND GENERAL PHYSICS

Unexpectedly high sputtering yield of carbon at grazing angle of incidence ion bombardment

A. Barna; M. Menyhard; L. Kotis; Gy. J. Kovacs; G. Radnoczi; A. Zalar; P. Panjan

J. Appl. Phys. 98, 024901 (2005) https://doi.org/10.1063/1.1968444

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Prediction of ceramic stereolithography resin sensitivity from theory and measurement of diffusive photon transport

K. C. Wu; K. F. Seefeldt; M. J. Solomon; J. W. Halloran

J. Appl. Phys. 98, 024902 (2005) https://doi.org/10.1063/1.1980531

Abstract

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Actuating and detecting of microdroplet using slanted finger interdigital transducers

Tsung-Tsong Wu; I-Hsiang Chang

J. Appl. Phys. 98, 024903 (2005) https://doi.org/10.1063/1.1949710

Abstract

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Low target power wafer sputtering regime identified during magnetron tantalum barrier physical vapor deposition

Phillip J. Stout; Dean J. Denning; Lynne M. Michaelson; Sandeep Bagchi; Da Zhang; Peter L. G. Ventzek

J. Appl. Phys. 98, 024904 (2005) https://doi.org/10.1063/1.1980532

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Deposition of microcrystalline silicon prepared by hot-wire chemical-vapor deposition: The influence of the deposition parameters on the material properties and solar cell performance

Stefan Klein; Friedhelm Finger; Reinhard Carius; Martin Stutzmann

J. Appl. Phys. 98, 024905 (2005) https://doi.org/10.1063/1.1957128

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Effect of $Zr O_{2}$ incorporation into high dielectric ${Gd}_{2} O_{3}$ film grown on Si(111)

S. A. Park; Y. S. Roh; Y. K. Kim; J. H. Baeck; M. Noh; K. Jeong; M.-H. Cho; C. H. Chang; M. K. Joo; T. G. Kim; J. H. Song; D.-H. Ko

J. Appl. Phys. 98, 024906 (2005) https://doi.org/10.1063/1.1990263

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Photochemical abiotic synthesis of amino-acid precursors from simulated planetary atmospheres by vacuum ultraviolet light

Jun-ichi Takahashi; Hitomi Masuda; Takeo Kaneko; Kensei Kobayashi; Takeshi Saito; Teruo Hosokawa

J. Appl. Phys. 98, 024907 (2005) https://doi.org/10.1063/1.1968438

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COMMUNICATIONS

Generation of megawatt-power terahertz pulses by noncollinear difference-frequency mixing in GaAs

S. Ya. Tochitsky; J. E. Ralph; C. Sung; C. Joshi

J. Appl. Phys. 98, 026101 (2005) https://doi.org/10.1063/1.1957123

Abstract

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Study of interdiffusion in $Ga As Sb N ∕ Ga As$ quantum well structure by ten-band $k ∙ p$ method

Y. X. Dang; W. J. Fan; S. T. Ng; S. Wicaksono; S. F. Yoon; D. H. Zhang

J. Appl. Phys. 98, 026102 (2005) https://doi.org/10.1063/1.1954886

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Morphology-dependent electric transport in textured ultrathin Al films grown on Si

D. K. Aswal; Niraj Joshi; A. K. Debnath; K. P. Muthe; S. K. Gupta; J. V. Yakhmi; Dominique Vuillaume

J. Appl. Phys. 98, 026103 (2005) https://doi.org/10.1063/1.1977188

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Stoichiometric amorphous ${MoO}_{3}$ films: A route to high performance electrochromic devices

Tarsame S. Sian; G. B. Reddy

J. Appl. Phys. 98, 026104 (2005) https://doi.org/10.1063/1.1949271

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Polarized photoreflectance spectroscopy of strained $A$ -plane GaN films on $R$ -plane sapphire

Sandip Ghosh; Pranob Misra; H. T. Grahn; Bilge Imer; Shuji Nakamura; S. P. DenBaars; J. S. Speck

J. Appl. Phys. 98, 026105 (2005) https://doi.org/10.1063/1.1968424

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Temperature response and anharmonicity of the optical phonons in GaN nanowires

Xiang-Bai Chen; Jesse Huso; John L. Morrison; Leah Bergman; Andrew P. Purdy

J. Appl. Phys. 98, 026106 (2005) https://doi.org/10.1063/1.1968425

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Nonbroadened asymmetric waveguide diode lasers promise much narrower far fields than broadened symmetric waveguide ones

B. S. Ryvkin; E. A. Avrutin

J. Appl. Phys. 98, 026107 (2005) https://doi.org/10.1063/1.1977190

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Solid-state thermionics and thermoelectrics in the ballistic transport regime

T. E. Humphrey; M. F. O’Dwyer; C. Zhang; R. A. Lewis

J. Appl. Phys. 98, 026108 (2005) https://doi.org/10.1063/1.1977191

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Microstructure and electrical properties of Ho-doped ${BaTiO}_{3}$ -sputtered films

C. H. Wu; J. P. Chu; S. F. Wang

J. Appl. Phys. 98, 026109 (2005) https://doi.org/10.1063/1.1984083

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ERRATA

Erratum: “Nonlinear anisotropic description for shocked single crystals: Thermoelastic response and pure mode wave propagation” [J. Appl. Phys. 96, 1993 (2004)]

J. M. Winey; Y. M. Gupta

J. Appl. Phys. 98, 029901 (2005) https://doi.org/10.1063/1.1997284

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Erratum: “Spin-injection efficiency and magnetoresistance in a ferromagnet-semiconductor-ferromagnet trilayer” [J. Appl. Phys. 97, 103907 (2005)]

S. Agrawal; M. B. A. Jalil; K. L. Teo; Y. F. Liew

J. Appl. Phys. 98, 029902 (2005) https://doi.org/10.1063/1.1997283

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC STRUCTURE AND TRANSPORT

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMUNICATIONS

ERRATA

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