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APPLIED PHYSICS REVIEWS-FOCUSED REVIEW

Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

Hideki Hirayama

J. Appl. Phys. 97, 091101 (2005) https://doi.org/10.1063/1.1899760

Abstract

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LASERS, OPTICS, AND OPTOELECTRONICS

Surface relief grating formation in liquid-crystalline side-chain azopolymers by femtosecond pulse holography

Geon Joon Lee; Cha Hwan Oh; YoungPak Lee; In Ae Kang; Yang Kyoo Han

J. Appl. Phys. 97, 093101 (2005) https://doi.org/10.1063/1.1879080

Abstract

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Color tunable metal-cavity organic light-emitting diodes with fullerene layer

Sijin Han; Changjun Huang; Zheng-Hong Lu

J. Appl. Phys. 97, 093102 (2005) https://doi.org/10.1063/1.1887830

Abstract

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Tuneability of amplified spontaneous emission through control of the thickness in organic-based waveguides

Eva M. Calzado; José M. Villalvilla; Pedro G. Boj; José A. Quintana; María A. Díaz-García

J. Appl. Phys. 97, 093103 (2005) https://doi.org/10.1063/1.1886891

Abstract

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Metallic photonic crystals with strong broadband absorption at optical frequencies over wide angular range

Georgios Veronis; Robert W. Dutton; Shanhui Fan

J. Appl. Phys. 97, 093104 (2005) https://doi.org/10.1063/1.1889248

Abstract

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A photodriven dual-frequency addressable optical device

Gurumurthy Hegde; Geetha G. Nair; S. Krishna Prasad; C. V. Yelamaggad

J. Appl. Phys. 97, 093105 (2005) https://doi.org/10.1063/1.1891275

Abstract

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Route towards optimization of the response times of a pi-cell liquid-crystal mode

E. J. Acosta; M. J. Towler; M. D. Tillin

J. Appl. Phys. 97, 093106 (2005) https://doi.org/10.1063/1.1888047

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES

Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering

W. L. Prater; E. L. Allen; W.-Y. Lee; M. F. Toney; A. Kellock; J. S. Daniels; J. A. Hedstrom; T. Harrell

J. Appl. Phys. 97, 093301 (2005) https://doi.org/10.1063/1.1886275

Abstract

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Molecular-dynamics model of energetic fluorocarbon-ion bombardment on ${SiO}_{2}$ I. Basic model and ${CF}_{2}^{+}$ -ion etch characterization

V. V. Smirnov; A. V. Stengach; K. G. Gaynullin; V. A. Pavlovsky; S. Rauf; P. J. Stout; P. L. G. Ventzek

J. Appl. Phys. 97, 093302 (2005) https://doi.org/10.1063/1.1893205

Abstract

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Molecular-dynamics model of energetic fluorocarbon-ion bombardment on ${SiO}_{2}$ ⁠. II. ${CF}_{x}^{+}$ (⁠ $x = 1$ ⁠, 2, 3) ion etch characterization

V. V. Smirnov; A. V. Stengach; K. G. Gaynullin; V. A. Pavlovsky; S. Rauf; P. Stout; P. L. G. Ventzek

J. Appl. Phys. 97, 093303 (2005) https://doi.org/10.1063/1.1893206

Abstract

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STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

Q. Wang; C. Z. Gu; J. J. Li; Z. L. Wang; C. Y. Shi; P. Xu; K. Zhu; Y. L. Liu

J. Appl. Phys. 97, 093501 (2005) https://doi.org/10.1063/1.1877814

Abstract

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Characterization and evaluation of silicon carbide for high-velocity impact

Timothy J. Holmquist; Gordon R. Johnson

J. Appl. Phys. 97, 093502 (2005) https://doi.org/10.1063/1.1881798

Abstract

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Microstructure of compositionally-graded $({Ba}_{1 - x} {Sr}_{x}) Ti O_{3}$ thin films epitaxially grown on ${La}_{0.5} {Sr}_{0.5} Co O_{3}$ -covered (100) $La Al O_{3}$ substrates by pulsed laser deposition

Xinhua Zhu; Helen Lai-Wah Chan; Chung-Loong Choy; Kin-Hung Wong; Dietrich Hesse

J. Appl. Phys. 97, 093503 (2005) https://doi.org/10.1063/1.1882766

Abstract

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Fast grain boundary diffusion and rate-limiting surface exchange reactions in polycrystalline materials

W. Preis; W. Sitte

J. Appl. Phys. 97, 093504 (2005) https://doi.org/10.1063/1.1882770

Abstract

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Film growth model of atomic layer deposition for multicomponent thin films

Jin-Hyock Kim; Ja-Yong Kim; Sang-Won Kang

J. Appl. Phys. 97, 093505 (2005) https://doi.org/10.1063/1.1883728

Abstract

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Crystal structure and atomic arrangement of the metastable ${Ge}_{2} {Sb}_{2} {Te}_{5}$ thin films deposited on ${SiO}_{2} ∕ Si$ substrates by sputtering method

Y. J. Park; J. Y. Lee; M. S. Youm; Y. T. Kim; H. S. Lee

J. Appl. Phys. 97, 093506 (2005) https://doi.org/10.1063/1.1877821

Abstract

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Quantitative analysis of damage in an octahydro-1,3,5,7-tetranitro-1,3,5,7-tetrazonic-based composite explosive subjected to a linear thermal gradient

Paul D. Peterson; Joseph T. Mang; Blaine W. Asay

J. Appl. Phys. 97, 093507 (2005) https://doi.org/10.1063/1.1879072

Abstract

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X-ray induced absorption in fused silica containing various amounts of OH

Nobu Kuzuu; Hideharu Horikoshi

J. Appl. Phys. 97, 093508 (2005) https://doi.org/10.1063/1.1883307

Abstract

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Investigation of the optical and electronic properties of ${Ge}_{2} {Sb}_{2} {Te}_{5}$ phase change material in its amorphous, cubic, and hexagonal phases

Bong-Sub Lee; John R. Abelson; Stephen G. Bishop; Dae-Hwan Kang; Byung-ki Cheong; Ki-Bum Kim

J. Appl. Phys. 97, 093509 (2005) https://doi.org/10.1063/1.1884248

Abstract

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Temperature dependence of ${Nd}^{3 +} \leftrightarrow {Yb}^{3 +}$ energy transfer in the $Y {Al}_{3} {(B O_{3})}_{4}$ nonlinear laser crystal

M. O. Ramirez; D. Jaque; L. E. Bausá; I. R. Martín; F. Lahoz; E. Cavalli; A. Speghini; M. Bettinelli

J. Appl. Phys. 97, 093510 (2005) https://doi.org/10.1063/1.1886887

Abstract

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Coupling between the exciton and cavity modes in a GaAs∕GaAlAs asymmetric microcavity structure

D. Y. Lin; Y. H. Chou; Y. S. Huang; K. K. Tiong

J. Appl. Phys. 97, 093511 (2005) https://doi.org/10.1063/1.1883303

Abstract

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Depth analysis of the in-plane lattice constants in compressively strained ${La}_{0.67} {Ca}_{0.33} Mn O_{3}$ thin films

M. Petit; M. Rajeswari; A. Biswas; R. L. Greene; T. Venkatesan; L. J. Martínez-Miranda

J. Appl. Phys. 97, 093512 (2005) https://doi.org/10.1063/1.1884761

Abstract

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Determination of in-depth density profiles of multilayer structures

M. J. H. Kessels; F. Bijkerk; F. D. Tichelaar; J. Verhoeven

J. Appl. Phys. 97, 093513 (2005) https://doi.org/10.1063/1.1882773

Abstract

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Lattice preamorphization by ion irradiation: Fluence dependence of the electronic stopping power threshold for amorphization

F. Agulló-López; G. García; J. Olivares

J. Appl. Phys. 97, 093514 (2005) https://doi.org/10.1063/1.1896444

Abstract

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Flexoelectric switching in a zenithally bistable nematic device

L. A. Parry-Jones; S. J. Elston

J. Appl. Phys. 97, 093515 (2005) https://doi.org/10.1063/1.1885184

Abstract

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Properties of radio-frequency-sputter-deposited GaN films in a nitrogen∕hydrogen mixed gas

Takayuki Miyazaki; Kouhei Takada; Sadao Adachi; Kohji Ohtsuka

J. Appl. Phys. 97, 093516 (2005) https://doi.org/10.1063/1.1888027

Abstract

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Interaction of defects and H in proton-irradiated GaN(Mg, H)

S. M. Myers; C. H. Seager

J. Appl. Phys. 97, 093517 (2005) https://doi.org/10.1063/1.1883309

Abstract

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Characteristics of $InGaAs$ quantum dots grown on tensile-strained ${GaAs}_{1 - x} P_{x}$

N. H. Kim; P. Ramamurthy; L. J. Mawst; T. F. Kuech; P. Modak; T. J. Goodnough; D. V. Forbes; M. Kanskar

J. Appl. Phys. 97, 093518 (2005) https://doi.org/10.1063/1.1884249

Abstract

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$InGaAs ∕ InP$ quantum well intermixing studied by high-resolution x-ray diffraction and grazing incidence x-ray analysis

P. G. Piva; I. V. Mitchell; Huajie Chen; R. M. Feenstra; G. C. Aers; P. J. Poole; S. Charbonneau

J. Appl. Phys. 97, 093519 (2005) https://doi.org/10.1063/1.1870114

Abstract

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Grain boundary grooving and cathode voiding in bamboo-like metallic interconnects by surface drift diffusion under the capillary and electromigration forces

Tarik Omer Ogurtani; Oncu Akyildiz

J. Appl. Phys. 97, 093520 (2005) https://doi.org/10.1063/1.1883305

Abstract

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Measurement of intergranular stress and porosity during dynamic compaction of porous beds of cyclotetramethylene tetranitramine

M. W. Greenaway

J. Appl. Phys. 97, 093521 (2005) https://doi.org/10.1063/1.1889244

Abstract

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Taylor impact of glass rods

G. R. Willmott; D. D. Radford

J. Appl. Phys. 97, 093522 (2005) https://doi.org/10.1063/1.1889249

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High-pressure fluorescence study of ${Sm}^{3 +}$ -doped borate and fluoroborate glasses

C. K. Jayasankar; V. Venkatramu; P. Babu; Th. Tröster; W. Sievers; G. Wortmann; W. B. Holzapfel

J. Appl. Phys. 97, 093523 (2005) https://doi.org/10.1063/1.1890448

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The initial stage of the reaction between amorphous silicon and crystalline aluminum

D. He; J. Y. Wang; E. J. Mittemeijer

J. Appl. Phys. 97, 093524 (2005) https://doi.org/10.1063/1.1890449

Abstract

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Strain compensation in boron-indium coimplanted laser thermal processed silicon

Mark H. Clark; Kevin S. Jones

J. Appl. Phys. 97, 093525 (2005) https://doi.org/10.1063/1.1891282

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Structural, electrical transport and x-ray absorption spectroscopy studies of ${LaFe}_{1 - x} {Ni}_{x} O_{3}$ $(x ⩽ 0.6)$

Ravi Kumar; R. J. Choudhary; M. Wasi Khan; J. P. Srivastava; C. W. Bao; H. M. Tsai; J. W. Chiou; K. Asokan; W. F. Pong

J. Appl. Phys. 97, 093526 (2005) https://doi.org/10.1063/1.1884754

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Structural and optical characterization of $W O_{3}$ thin films for gas sensor applications

E. György; G. Socol; I. N. Mihailescu; C. Ducu; S. Ciuca

J. Appl. Phys. 97, 093527 (2005) https://doi.org/10.1063/1.1889246

Abstract

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Interrelation between nonlinear elastic surface pulses and dynamic fracture

Alexey M. Lomonosov; Peter Hess

J. Appl. Phys. 97, 093528 (2005) https://doi.org/10.1063/1.1890450

Abstract

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Optical characterizations of heavily doped $p$ -type ${Al}_{x} {Ga}_{1 - x} As$ and GaAs epitaxial films at terahertz frequencies

Z. G. Hu; M. B. M. Rinzan; S. G. Matsik; A. G. U. Perera; G. Von Winckel; A. Stintz; S. Krishna

J. Appl. Phys. 97, 093529 (2005) https://doi.org/10.1063/1.1894581

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ELECTRONIC STRUCTURE AND TRANSPORT

Mapping of local oxide properties by quantitative scanning capacitance spectroscopy

W. Brezna; S. Harasek; A. Lugstein; T. Leitner; H. Hoffmann; E. Bertagnolli; J. Smoliner

J. Appl. Phys. 97, 093701 (2005) https://doi.org/10.1063/1.1881773

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Temperature dependence of the ambipolar carrier migration in a structure with $InAs$ quantum dots grown in a strained $GaInAs$ quantum well

Dan P. Popescu; Peter G. Eliseev; Kevin J. Malloy

J. Appl. Phys. 97, 093702 (2005) https://doi.org/10.1063/1.1877817

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High temperature thermoelectric properties of $B_{12}$ icosahedral cluster-containing rare earth boride crystals

Takao Mori

J. Appl. Phys. 97, 093703 (2005) https://doi.org/10.1063/1.1883726

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Velocity-field characteristics in the multivalley model of gallium arsenide

Ankur Sharma; Vijay K. Arora

J. Appl. Phys. 97, 093704 (2005) https://doi.org/10.1063/1.1884756

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Differential tunnel transparency of a rectangular heterostructural barrier for the terahertz frequency range

Z. S. Gribnikov; G. I. Haddad

J. Appl. Phys. 97, 093705 (2005) https://doi.org/10.1063/1.1886277

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Hopping conductivity in Cr-doped $β ‐ Fe {Si}_{2}$ single crystals

K. G. Lisunov; E. Arushanov; H. Vinzelberg; G. Behr; J. Schumann

J. Appl. Phys. 97, 093706 (2005) https://doi.org/10.1063/1.1887831

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Band diagram of the $Al F_{3} ∕ Si O_{2} ∕ Si$ system

D. König; R. Scholz; D. R. T. Zahn; G. Ebest

J. Appl. Phys. 97, 093707 (2005) https://doi.org/10.1063/1.1886909

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Mechanical force sensors using organic thin-film transistors

Grzegorz Darlinski; Ulrich Böttger; Rainer Waser; Hagen Klauk; Marcus Halik; Ute Zschieschang; Günter Schmid; Christine Dehm

J. Appl. Phys. 97, 093708 (2005) https://doi.org/10.1063/1.1888046

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Enhanced coherent control of carrier and spin density in a zinc-blende semiconductor by cascaded second-harmonic generation

Martin J. Stevens; R. D. R. Bhat; X. Y. Pan; H. M. van Driel; J. E. Sipe; Arthur L. Smirl

J. Appl. Phys. 97, 093709 (2005) https://doi.org/10.1063/1.1879079

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Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

T. Grasser; R. Kosik; C. Jungemann; H. Kosina; S. Selberherr

J. Appl. Phys. 97, 093710 (2005) https://doi.org/10.1063/1.1883311

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Ionization of deep Te donor in Te-doped ${Al}_{0.6} {Ga}_{0.4} Sb$ epilayers

Hideharu Matsuura; Kazuhiro Nishikawa

J. Appl. Phys. 97, 093711 (2005) https://doi.org/10.1063/1.1887832

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Synthesis and thermoelectric properties of $p$ -type- and $n$ -type-filled skutterudite $R_{y} M_{x} {Co}_{4 - x} {Sb}_{12} (R : Ce, Ba, Y; M : Fe, Ni)$

Xinfeng Tang; Qingjie Zhang; Lidong Chen; Takashi Goto; Toshio Hirai

J. Appl. Phys. 97, 093712 (2005) https://doi.org/10.1063/1.1888048

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Electronic properties of half metallic ${Fe}_{3} O_{4}$ films

S. Jain; A. O. Adeyeye; C. B. Boothroyd

J. Appl. Phys. 97, 093713 (2005) https://doi.org/10.1063/1.1889247

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Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films

Martin T. K. Soh; N. Savvides; Charles A. Musca; Mariusz P. Martyniuk; Lorenzo Faraone

J. Appl. Phys. 97, 093714 (2005) https://doi.org/10.1063/1.1889236

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Modeling of electron mobility in GaN materials

Ibrahim M. Abdel-Motaleb; Roman Y. Korotkov

J. Appl. Phys. 97, 093715 (2005) https://doi.org/10.1063/1.1891278

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Hole mobility of $p$ -type $β ‐ {FeSi}_{2}$ thin films grown from $Si ∕ Fe$ multilayers

K. Takakura; H. Ohyama; K. Takarabe; T. Suemasu; F. Hasegawa

J. Appl. Phys. 97, 093716 (2005) https://doi.org/10.1063/1.1891279

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Effect of material properties on low-energy electron transmission in thin chemical-vapor deposited diamond films

J. E. Yater; A. Shih; J. E. Butler; P. E. Pehrsson

J. Appl. Phys. 97, 093717 (2005) https://doi.org/10.1063/1.1893212

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A revised reverse gated-diode technique for determining generation parameters in thin-film silicon-on-insulator devices and its application at high temperatures

T. Rudenko; V. Kilchytska; V. Dessard; D. Flandre

J. Appl. Phys. 97, 093718 (2005) https://doi.org/10.1063/1.1893211

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MAGNETISM AND SUPERCONDUCTIVITY

High-field microwave effective linewidth in polycrystalline ferrites: Physical origins and intrinsic limits

Nan Mo; Young-Yeal Song; Carl E. Patton

J. Appl. Phys. 97, 093901 (2005) https://doi.org/10.1063/1.1887834

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Epitaxial growth of highly coercive Sm–Co thin films using pulsed laser deposition

A. Singh; R. Tamm; V. Neu; S. Fähler; C.-G. Oertel; W. Skrotzki; L. Schultz; B. Holzapfel

J. Appl. Phys. 97, 093902 (2005) https://doi.org/10.1063/1.1879073

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Magnetic and electrical properties of single-phase multiferroic ${BiFeO}_{3}$

A. K. Pradhan; Kai Zhang; D. Hunter; J. B. Dadson; G. B. Loiutts; P. Bhattacharya; R. Katiyar; Jun Zhang; D. J. Sellmyer; U. N. Roy; Y. Cui; A. Burger

J. Appl. Phys. 97, 093903 (2005) https://doi.org/10.1063/1.1881775

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Thermal analysis, nuclear magnetic resonance spectroscopy, and impedance spectroscopy of N,N-dimethyl-pyrrolidinium iodide: An ionic solid exhibiting rotator phases

Josefina Adebahr; Aaron J. Seeber; Douglas R. MacFarlane; Maria Forsyth

J. Appl. Phys. 97, 093904 (2005) https://doi.org/10.1063/1.1889245

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The redistribution of oxygen at ${AlO}_{x}$ ∕CoFe interface of magnetic tunnel junctions through thermal treatment

Donkoun Lee; Jongill Hong

J. Appl. Phys. 97, 093905 (2005) https://doi.org/10.1063/1.1885185

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Fe thin films grown on single-crystal and virtual Ge(001) substrates

M. Cantoni; M. Riva; G. Isella; R. Bertacco; F. Ciccacci

J. Appl. Phys. 97, 093906 (2005) https://doi.org/10.1063/1.1887836

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Tunable one-dimensional ordered structure in a magnetic fluid microstrip under parallel magnetic fields

S. Y. Yang; Y. H. Chao; H. E. Horng; Chin Yin Hong; H. C. Yang

J. Appl. Phys. 97, 093907 (2005) https://doi.org/10.1063/1.1893208

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Effect of annealing on the magnetic, transport, and electronic properties of electron-beam evaporated $Fe ∕ Al$ multilayers

R. Brajpuriya; S. Tripathi; S. M. Chaudhari

J. Appl. Phys. 97, 093908 (2005) https://doi.org/10.1063/1.1893210

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The upper critical field of filamentary ${Nb}_{3} Sn$ conductors

A. Godeke; M. C. Jewell; C. M. Fischer; A. A. Squitieri; P. J. Lee; D. C. Larbalestier

J. Appl. Phys. 97, 093909 (2005) https://doi.org/10.1063/1.1890447

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Influence of the annealing field strength on exchange bias and magnetoresistance of spin valves with IrMn

Emma Kerr; Sebastiaan van Dijken; J. M. D. Coey

J. Appl. Phys. 97, 093910 (2005) https://doi.org/10.1063/1.1895474

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DIELECTRICS AND FERROELECTRICITY

Structural phase transformation and phase boundary∕stability studies of field-cooled $Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3} O_{3}) - 32 % Pb Ti O_{3}$ crystals

Hu Cao; Feiming Bai; Jiefang Li; D. Viehland; Guangyong Xu; H. Hiraka; G. Shirane

J. Appl. Phys. 97, 094101 (2005) https://doi.org/10.1063/1.1883723

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Experimental measurement of stress at a four-domain junction in lead zirconate titanate

Ian MacLaren; Ljubomira A. Schmitt; Hartmut Fuess; Hans Kungl; Michael J. Hoffmann

J. Appl. Phys. 97, 094102 (2005) https://doi.org/10.1063/1.1886910

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Ferroelectric properties of $LaAl O_{3} ∕ BaTi O_{3}$ superlattices prepared by laser molecular-beam epitaxy

Y. Li; L. Z. Hao; H. Deng; F. G. Chen; Y. R. Li

J. Appl. Phys. 97, 094103 (2005) https://doi.org/10.1063/1.1887829

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Conduction mechanisms and reliability of thermal ${Ta}_{2} O_{5} - Si$ structures and the effect of the gate electrode

E. Atanassova; A. Paskaleva; N. Novkovski; M. Georgieva

J. Appl. Phys. 97, 094104 (2005) https://doi.org/10.1063/1.1884758

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Influence of composition on relaxor ferroelectric and electromechanical properties of poly(vinylidene fluoride-trifluoroethylene- chlorofluoroethylene)

Rob J. Klein; Feng Xia; Q. M. Zhang; François Bauer

J. Appl. Phys. 97, 094105 (2005) https://doi.org/10.1063/1.1882769

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The elastic and piezoelectric properties of tungsten bronze ferroelectric crystals ${({Sr}_{0.7} {Ba}_{0.3})}_{2} {NaNb}_{5} O_{15}$ and ${({Sr}_{0.3} {Ba}_{0.7})}_{2} {NaNb}_{5} O_{15}$

Wenhua Jiang; Wenwu Cao; Xiujie Yi; Huanchu Chen

J. Appl. Phys. 97, 094106 (2005) https://doi.org/10.1063/1.1881777

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Domain structure and evolution in ${({PbMg}_{1 ∕ 3} {Nb}_{2 ∕ 3} O_{3})}_{0.75} {({PbTiO}_{3})}_{0.25}$ single crystal studied by temperature-dependent piezoresponse force microscopy

X. Zhao; J. Y. Dai; J. Wang; H. L. W. Chan; C. L. Choy; X. M. Wan; H. S. Luo

J. Appl. Phys. 97, 094107 (2005) https://doi.org/10.1063/1.1890454

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NANOSCALE SCIENCE AND DESIGN

Effect of crystal orientation on self-assembled silicon nanostructures formed by electron-beam annealing

S. Johnson; A. Markwitz; M. Rudolphi; H. Baumann; P.-Y. Kuo; R. Blaikie; A. Mücklich

J. Appl. Phys. 97, 094301 (2005) https://doi.org/10.1063/1.1877819

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Effects of deposition parameters on residual stresses, hardness and electrical resistivity of nanoscale twinned 330 stainless steel thin films

X. Zhang; A. Misra; H. Wang; A. L. Lima; M. F. Hundley; R. G. Hoagland

J. Appl. Phys. 97, 094302 (2005) https://doi.org/10.1063/1.1883724

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Hysteresis trace in cylindrical magnetic nanoparticles with individual defects

Afranio R. Pereira

J. Appl. Phys. 97, 094303 (2005) https://doi.org/10.1063/1.1877818

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Bimetallic Pt–Ag and Pd–Ag nanoparticles

Debdutta Lahiri; Bruce Bunker; Bhoopesh Mishra; Zhenyuan Zhang; Dan Meisel; C. M. Doudna; M. F. Bertino; Frank D. Blum; A. T. Tokuhiro; Soma Chattopadhyay; Tomohiro Shibata; Jeff Terry

J. Appl. Phys. 97, 094304 (2005) https://doi.org/10.1063/1.1888043

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Photochromic silver nanoparticles fabricated by sputter deposition

J. Okumu; C. Dahmen; A. N. Sprafke; M. Luysberg; G. von Plessen; M. Wuttig

J. Appl. Phys. 97, 094305 (2005) https://doi.org/10.1063/1.1888044

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Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich ${SiO}_{2}$

Gong-Ru Lin; Chun-Jung Lin; Chi-Kuan Lin; Li-Jen Chou; Yu-Lun Chueh

J. Appl. Phys. 97, 094306 (2005) https://doi.org/10.1063/1.1886274

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Electronic structure of sulfur-modified nanocrystalline carbon films

S. Gupta; B. R. Weiner; G. Morell

J. Appl. Phys. 97, 094307 (2005) https://doi.org/10.1063/1.1888025

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An investigation into the magnetic properties of Co–Cu nanoparticles at different temperatures

Shih-Jye Sun; Shin-Pon Ju; Yu-Chieh Lo; Jenn-Sen Lin

J. Appl. Phys. 97, 094308 (2005) https://doi.org/10.1063/1.1862310

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Magnetic properties of the $Co - C_{60}$ and $Fe - C_{60}$ nanocrystalline magnetic thin films

Lingyi A. Zheng; Enrique V. Barrera; Robert D. Shull

J. Appl. Phys. 97, 094309 (2005) https://doi.org/10.1063/1.1886271

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Polarizabilities and effective parameters for collections of spherical nanoparticles formed by pairs of concentric double-negative, single-negative, and∕or double-positive metamaterial layers

Andrea Alù; Nader Engheta

J. Appl. Phys. 97, 094310 (2005) https://doi.org/10.1063/1.1884757

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Electron wave-packet transport through nanoscale semiconductor device in time domain

Y. Fu; M. Willander

J. Appl. Phys. 97, 094311 (2005) https://doi.org/10.1063/1.1890452

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Optical properties of nanocrystalline $Y_{2} O_{3} : {Eu}^{3 +}$

S. Ray; P. Pramanik; A. Singha; Anushree Roy

J. Appl. Phys. 97, 094312 (2005) https://doi.org/10.1063/1.1884759

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Oscillatory behavior of C60-nanotube oscillators: A molecular-dynamics study

P. Liu; Y. W. Zhang; C. Lu

J. Appl. Phys. 97, 094313 (2005) https://doi.org/10.1063/1.1890451

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DEVICE PHYSICS

Electrostatically actuated thin-film amorphous silicon microbridge resonators

J. Gaspar; V. Chu; J. P. Conde

J. Appl. Phys. 97, 094501 (2005) https://doi.org/10.1063/1.1877820

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Sputtered ${Zn}_{1 - x} {Ga}_{2} O_{4} : Mn$ thin-film electroluminescent devices prepared using cadmium-assisted processing

M. Flynn; A. H. Kitai

J. Appl. Phys. 97, 094502 (2005) https://doi.org/10.1063/1.1886889

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Theory of the GaN crystal diode: Negative mass negative differential resistance

B. K. Ridley; W. J. Schaff; L. F. Eastman

J. Appl. Phys. 97, 094503 (2005) https://doi.org/10.1063/1.1889235

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Residual stress evolution in multilayer ceramic capacitors corresponding to layer increase and its correlation to the dielectric constant

Jong-Sung Park; Sujin Kim; Hyunho Shin; Hyun Suk Jung; Kug Sun Hong

J. Appl. Phys. 97, 094504 (2005) https://doi.org/10.1063/1.1894602

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INTERDISCIPLINARY AND GENERAL PHYSICS

Multiferroic ${BiFeO}_{3}$ thin films processed via chemical solution deposition: Structural and electrical characterization

S. Iakovlev; C.-H. Solterbeck; M. Kuhnke; M. Es-Souni

J. Appl. Phys. 97, 094901 (2005) https://doi.org/10.1063/1.1881776

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Importance of barrier layers in thermal diodes for energy conversion

Yan Kucherov; Peter Hagelstein; Victor Sevastyanenko; Harold L. Brown; Sivaraman Guruswamy; Wayne Wingert

J. Appl. Phys. 97, 094902 (2005) https://doi.org/10.1063/1.1886273

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Ink-jet delivery of particle suspensions by piezoelectric droplet ejectors

Nuno Reis; Chris Ainsley; Brian Derby

J. Appl. Phys. 97, 094903 (2005) https://doi.org/10.1063/1.1888026

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Ion-induced surface activation, chemical sputtering, and hydrogen release during plasma-assisted hydrocarbon film growth

C. Hopf; W. Jacob; A. von Keudell

J. Appl. Phys. 97, 094904 (2005) https://doi.org/10.1063/1.1883729

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Interferometric detection of acoustic waves at air-solid interface applications to non-destructive testing

F. Jenot; M. Ouaftouh; M. Duquennoy; M. Ourak

J. Appl. Phys. 97, 094905 (2005) https://doi.org/10.1063/1.1886276

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Anisotropic resistivity in plasma-sprayed silicon thick films

Boris Dave Kharas; Sanjay Sampath; Richard J. Gambino

J. Appl. Phys. 97, 094906 (2005) https://doi.org/10.1063/1.1886892

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Highly polarized electrons from GaAs–GaAsP and InGaAs–AlGaAs strained-layer superlattice photocathodes

J. Appl. Phys. 97, 094907 (2005) https://doi.org/10.1063/1.1886888

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Neutron and photon transport in seagoing cargo containers

J. Pruet; M.-A. Descalle; J. Hall; B. Pohl; S. G. Prussin

J. Appl. Phys. 97, 094908 (2005) https://doi.org/10.1063/1.1887835

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Copper precipitation in large-diameter Czochralski silicon

Zhenqiang Xi; Jun Chen; Deren Yang; A. Lawerenz; H. J. Moeller

J. Appl. Phys. 97, 094909 (2005) https://doi.org/10.1063/1.1875740

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Hybrid-phase growth in microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition at low temperatures

T. Sugano; T. Kitagawa; Y. Sobajima; T. Toyama; H. Okamoto

J. Appl. Phys. 97, 094910 (2005) https://doi.org/10.1063/1.1883720

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Guided elastic waves in porous materials saturated by air under Lamb conditions

L. Boeckx; P. Leclaire; P. Khurana; C. Glorieux; W. Lauriks; J. F. Allard

J. Appl. Phys. 97, 094911 (2005) https://doi.org/10.1063/1.1886885

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Probing liquation cracking and solidification through modeling of momentum, heat, and solute transport during welding of aluminum alloys

S. Mishra; S. Chakraborty; T. DebRoy

J. Appl. Phys. 97, 094912 (2005) https://doi.org/10.1063/1.1886272

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Microstructure of $(Ga, Mn) As ∕ Ga As$ digital ferromagnetic heterostructures

X. Kong; A. Trampert; X. X. Guo; D. Kolovos-Vellianitis; L. Däweritz; K. H. Ploog

J. Appl. Phys. 97, 094913 (2005) https://doi.org/10.1063/1.1889225

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Low-temperature Al-induced crystallization of amorphous Ge

A. R. Zanatta; I. Chambouleyron

J. Appl. Phys. 97, 094914 (2005) https://doi.org/10.1063/1.1889227

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Lift-off process and rear-side characterization of ${CuGaSe}_{2}$ chalcopyrite thin films and solar cells

D. Fuertes Marrón; A. Meeder; S. Sadewasser; R. Würz; C. A. Kaufmann; Th. Glatzel; Th. Schedel-Niedrig; M. Ch. Lux-Steiner

J. Appl. Phys. 97, 094915 (2005) https://doi.org/10.1063/1.1891274

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Frequency band-gap measurement of two-dimensional air/silicon phononic crystals using layered slanted finger interdigital transducers

Tsung-Tsong Wu; Liang-Chen Wu; Zi-Gui Huang

J. Appl. Phys. 97, 094916 (2005) https://doi.org/10.1063/1.1893209

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Optical calibration of pressure sensors for high pressures and temperatures

Alexander F. Goncharov; Joseph M. Zaug; Jonathan C. Crowhurst; Eugene Gregoryanz

J. Appl. Phys. 97, 094917 (2005) https://doi.org/10.1063/1.1895467

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Electron emission suppression characteristics of molybdenum grids coated with Pt films by ion-beam-assisted deposition

Jun Jiang; Bingyao Jiang; Congxin Ren; Fumin Zhang; Tao Feng; Xi Wang; Xianghuai Liu; Shichang Zou

J. Appl. Phys. 97, 094918 (2005) https://doi.org/10.1063/1.1896096

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Laser ablation of human tooth

Sushmita R. Franklin; P. Chauhan; A. Mitra; R. K. Thareja

J. Appl. Phys. 97, 094919 (2005) https://doi.org/10.1063/1.1897494

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COMMUNICATIONS

High mobility electron-transport material based on 2,5-dibenzthiazolyl thiophene

Qureshi Mohammad; S. Sundar Manoharan

J. Appl. Phys. 97, 096101 (2005) https://doi.org/10.1063/1.1881791

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Proposed single-exposure holographic fabrication of microsphere-type photonic crystals through phase-mask techniques

Y. Lin; P. R. Herman; E. L. Abolghasemi

J. Appl. Phys. 97, 096102 (2005) https://doi.org/10.1063/1.1881792

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The kinetics of internal structural relaxation of metallic glasses probed with ion beams and resistivity measurements

S. G. Mayr

J. Appl. Phys. 97, 096103 (2005) https://doi.org/10.1063/1.1884753

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Manipulation of luminescence from CdSe nanoparticles by three-dimensional photonic crystal

C. M. Chuang; W. B. Lu; W. F. Su; C. M. Lin; Y. F. Chen

J. Appl. Phys. 97, 096104 (2005) https://doi.org/10.1063/1.1888042

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Second-generation quantum-well sensors for room-temperature scanning Hall probe microscopy

A. Pross; A. I. Crisan; S. J. Bending; V. Mosser; M. Konczykowski

J. Appl. Phys. 97, 096105 (2005) https://doi.org/10.1063/1.1887828

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Red light-emitting diodes based on $InP ∕ GaP$ quantum dots

F. Hatami; V. Lordi; J. S. Harris; H. Kostial; W. T. Masselink

J. Appl. Phys. 97, 096106 (2005) https://doi.org/10.1063/1.1884752

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High-frequency modeling of $GaN ∕ SiC$ blue light-emitting diodes

P. Antoranz; J. M. Miranda; J. L. Sebastián; M. Cámara; V. Fonseca

J. Appl. Phys. 97, 096107 (2005) https://doi.org/10.1063/1.1877813

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Formation and oxidation of Si nanoclusters in Er-doped Si-rich $Si O_{x}$

X. D. Pi; O. H. Y. Zalloum; J. Wojcik; A. P. Knights; P. Mascher; A. D. W. Todd; P. J. Simpson

J. Appl. Phys. 97, 096108 (2005) https://doi.org/10.1063/1.1894600

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ERRATA

Erratum: “Energetic model of ferromagnetic hysteresis: Isotropic magnetization” [J. Appl. Phys. 96, 2753 (2004)]

Hans Hauser

J. Appl. Phys. 97, 099901 (2005) https://doi.org/10.1063/1.1879087

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Publisher’s Note: “General theory of carrier lifetime in semiconductors with multiple localized states” [J. Appl. Phys. 96, 6454 (2004)]

Didier Debuf

J. Appl. Phys. 97, 099902 (2005) https://doi.org/10.1063/1.1858490

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Erratum: Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films [J. Appl. Phys. 96, 5298 (2004)]

Kaupo Kukli; Jaan Aarik; Mikko Ritala; Teet Uustare; Timo Sajavaara; Jun Lu; Jonas Sundqvist; Aleks Aidla; Lembit Pung; Anders Hårsta; Markku Leskelä

J. Appl. Phys. 97, 099903 (2005) https://doi.org/10.1063/1.1895475

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Erratum: “Sexithiophene films on clean and oxidized Si(111) surfaces: Growth and electronic structure” [J. Appl. Phys. 96, 2716 (2004)]

J. Ivanco; J. R. Krenn; M. G. Ramsey; F. P. Netzer; T. Haber; R. Resel; A. Haase; B. Stadlober; G. Jakopic

J. Appl. Phys. 97, 099904 (2005) https://doi.org/10.1063/1.1879086

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Issues

APPLIED PHYSICS REVIEWS-FOCUSED REVIEW

LASERS, OPTICS, AND OPTOELECTRONICS

PLASMAS AND ELECTRICAL DISCHARGES

STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

ELECTRONIC STRUCTURE AND TRANSPORT

MAGNETISM AND SUPERCONDUCTIVITY

DIELECTRICS AND FERROELECTRICITY

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS

INTERDISCIPLINARY AND GENERAL PHYSICS

COMMUNICATIONS

ERRATA

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