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APPLIED PHYSICS REVIEWS - FOCUSED REVIEW

Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

L. Dobaczewski; A. R. Peaker; K. Bonde Nielsen

J. Appl. Phys. 96, 4689–4728 (2004) https://doi.org/10.1063/1.1794897

Abstract

View articletitled, Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Ultrafast nonlinear tuning of the reflection properties of AlGaAs photonic crystal waveguides by two-photon absorption

A. D. Bristow; D. O. Kundys; A. Z. García-Déniz; J.-P. R. Wells; A. M. Fox; M. S. Skolnick; D. M. Whittaker; A. Tahraoui; T. F. Krauss; J. S. Roberts

J. Appl. Phys. 96, 4729–4734 (2004) https://doi.org/10.1063/1.1790569

Abstract

View articletitled, Ultrafast nonlinear tuning of the reflection properties of AlGaAs photonic crystal waveguides by two-photon absorption

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A comparison of the optical constants of aligned and unaligned thin polyfluorene films

Benjamin P. Lyons; Andrew P. Monkman

J. Appl. Phys. 96, 4735–4741 (2004) https://doi.org/10.1063/1.1790575

Abstract

View articletitled, A comparison of the optical constants of aligned and unaligned thin polyfluorene films

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Wet etching fabrication of photonic quantum ring laser

Moojin Kim; Dongkwon Kim; Seongeun Lee; O’Dae Kwon

J. Appl. Phys. 96, 4742–4745 (2004) https://doi.org/10.1063/1.1786346

Abstract

View articletitled, Wet etching fabrication of photonic quantum ring laser

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Absorption and photoluminescence properties of $Er$ -doped and $Er ∕ Yb$ codoped soda-silicate laser glasses

S. F. Li; Q. Y. Zhang; Y. P. Lee

J. Appl. Phys. 96, 4746–4750 (2004) https://doi.org/10.1063/1.1792388

Abstract

View articletitled, Absorption and photoluminescence properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Er</mi></mrow></math>-doped and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Er</mi><mo>∕</mo><mi mathvariant="normal">Yb</mi></mrow></math> codoped soda-silicate laser glasses

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Resonantly pumped optical pumping injection cavity lasers

T. C. McAlpine; K. R. Greene; M. R. Santilli; L. J. Olafsen; W. W. Bewley; C. L. Felix; I. Vurgaftman; J. R. Meyer; H. Lee; R. U. Martinelli

J. Appl. Phys. 96, 4751–4754 (2004) https://doi.org/10.1063/1.1801164

Abstract

View articletitled, Resonantly pumped optical pumping injection cavity lasers

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Effect of free-carrier absorption on the threshold current density of $Ga As ∕ (Al, Ga) As$ quantum-cascade lasers

M. Giehler; H. Kostial; R. Hey; H. T. Grahn

J. Appl. Phys. 96, 4755–4761 (2004) https://doi.org/10.1063/1.1803635

Abstract

View articletitled, Effect of free-carrier absorption on the threshold current density of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi><mo>∕</mo><mrow><mo>(</mo><mi mathvariant="normal">Al</mi><mo>,</mo><mi mathvariant="normal">Ga</mi><mo>)</mo></mrow><mi mathvariant="normal">As</mi></mrow></math> quantum-cascade lasers

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Radiofrequency sheath fields above a metal-dielectric interface

E. V. Barnat; G. A. Hebner

J. Appl. Phys. 96, 4762–4770 (2004) https://doi.org/10.1063/1.1794901

Abstract

View articletitled, Radiofrequency sheath fields above a metal-dielectric interface

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Effects of radio-frequency driving power, gas pressure, and nitrogen seeding on the transition dynamics in argon inductively coupled plasmas

M. Abdur Razzak; Shuichi Takamura; Yoshihiko Uesugi

J. Appl. Phys. 96, 4771–4776 (2004) https://doi.org/10.1063/1.1790066

Abstract

View articletitled, Effects of radio-frequency driving power, gas pressure, and nitrogen seeding on the transition dynamics in argon inductively coupled plasmas

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Analytical fit of the $I - V$ characteristic for cylindrical and spherical probes in electronegative plasmas

R. Morales Crespo; J. I. Fernández Palop; M. A. Hernández; S. Borrego del Pino; J. Ballesteros

J. Appl. Phys. 96, 4777–4783 (2004) https://doi.org/10.1063/1.1796517

Abstract

View articletitled, Analytical fit of the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>I</mi><mtext>-</mtext><mi>V</mi></mrow></math> characteristic for cylindrical and spherical probes in electronegative plasmas

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Bayesian analysis of the effective charge from spectroscopic bremsstrahlung measurement in fusion plasmas

M. Krychowiak; R. König; T. Klinger; R. Fischer

J. Appl. Phys. 96, 4784–4792 (2004) https://doi.org/10.1063/1.1787135

Abstract

View articletitled, Bayesian analysis of the effective charge from spectroscopic bremsstrahlung measurement in fusion plasmas

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Charge state and time resolved plasma composition of a pulsed zirconium arc in a nitrogen environment

Johanna Rosén; André Anders; Lars Hultman; Jochen M. Schneider

J. Appl. Phys. 96, 4793–4799 (2004) https://doi.org/10.1063/1.1803627

Abstract

View articletitled, Charge state and time resolved plasma composition of a pulsed zirconium arc in a nitrogen environment

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Physical mechanisms for anisotropic plasma etching of cesium iodide

Xiaoji Yang; Jeffrey A. Hopwood

J. Appl. Phys. 96, 4800–4806 (2004) https://doi.org/10.1063/1.1803607

Abstract

View articletitled, Physical mechanisms for anisotropic plasma etching of cesium iodide

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The improvement of discharge characteristics and lifetime of alternate current plasma display panel by $MgO$ deposition on the phosphor

Chang Hoon Ha; Jae Sung Kim; Dong Chul Jeong; Ki Woong Whang

J. Appl. Phys. 96, 4807–4810 (2004) https://doi.org/10.1063/1.1803943

Abstract

View articletitled, The improvement of discharge characteristics and lifetime of alternate current plasma display panel by <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">MgO</mi></mrow></math> deposition on the phosphor

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Chemical and electrical characterization of ${Gd}_{2} O_{3} ∕ GaAs$ interface improved by sulfur passivation

Jun-Kyu Yang; Min-Gu Kang; Hyung-Ho Park

J. Appl. Phys. 96, 4811–4816 (2004) https://doi.org/10.1063/1.1785851

Abstract

View articletitled, Chemical and electrical characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Gd</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mo>∕</mo><mi mathvariant="normal">GaAs</mi></mrow></math> interface improved by sulfur passivation

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Growth of ${Ti}_{3} {SiC}_{2}$ thin films by elemental target magnetron sputtering

Jens Emmerlich; Hans Högberg; Szilvia Sasvári; Per O. Å. Persson; Lars Hultman; Jens-Petter Palmquist; Ulf Jansson; Jon M. Molina-Aldareguia; Zsolt Czigány

J. Appl. Phys. 96, 4817–4826 (2004) https://doi.org/10.1063/1.1790571

Abstract

View articletitled, Growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Ti</mi></mrow><mn>3</mn></msub><msub><mrow><mi mathvariant="normal">SiC</mi></mrow><mn>2</mn></msub></mrow></math> thin films by elemental target magnetron sputtering

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Emission properties of ${Ho}^{3 +} ∕ {Tb}^{3 +}$ Co-doped in ${Ge}_{30} {Ga}_{2} {As}_{8} S_{60}$ glass

Tae Hoon Lee; Jong Heo; Yong Gyu Choi; Bong Je Park; Woon Jin Chung

J. Appl. Phys. 96, 4827–4832 (2004) https://doi.org/10.1063/1.1796519

Abstract

View articletitled, Emission properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mi mathvariant="normal">Ho</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup><mo>∕</mo><msup><mi mathvariant="normal">Tb</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></mrow></math> Co-doped in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ge</mi><mn>30</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>2</mn></msub><msub><mi mathvariant="normal">As</mi><mn>8</mn></msub><msub><mi mathvariant="normal">S</mi><mn>60</mn></msub></mrow></math> glass

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X-ray diffraction on laterally modulated ${(InAs)}_{n} ∕ {(AlAs)}_{m}$ short-period superlattices

O. Caha; V. Křápek; V. Holý; S. C. Moss; J. H. Li; A. G. Norman; A. Mascarenhas; J. L. Reno; J. Stangl; M. Meduňa

J. Appl. Phys. 96, 4833–4838 (2004) https://doi.org/10.1063/1.1781768

Abstract

View articletitled, X-ray diffraction on laterally modulated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mo>(</mo><mrow><mi mathvariant="normal">InAs</mi></mrow><mo>)</mo></mrow><mi>n</mi></msub><mo>∕</mo><msub><mrow><mo>(</mo><mrow><mi mathvariant="normal">AlAs</mi></mrow><mo>)</mo></mrow><mi>m</mi></msub></mrow></math> short-period superlattices

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Large nonlinear optical properties of semiconductor quantum dot arrays embedded in an organic medium

Y. Gao; N. Q. Huong; J. L. Birman; M. J. Potasek

J. Appl. Phys. 96, 4839–4842 (2004) https://doi.org/10.1063/1.1797545

Abstract

View articletitled, Large nonlinear optical properties of semiconductor quantum dot arrays embedded in an organic medium

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Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

M. Smith; R. A. McMahon; M. Voelskow; W. Skorupa

J. Appl. Phys. 96, 4843–4851 (2004) https://doi.org/10.1063/1.1786650

Abstract

View articletitled, Modeling and regrowth mechanisms of flash lamp processing of SiC-on-silicon heterostructures

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Photorefractive effect and photochromism in the $Fe$ -doped relaxor ferroelectric crystal $Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - {PbTiO}_{3}$

Y. Sato; S. Abe; R. Fujimura; H. Ono; K. Oda; T. Shimura; K. Kuroda

J. Appl. Phys. 96, 4852–4855 (2004) https://doi.org/10.1063/1.1782953

Abstract

View articletitled, Photorefractive effect and photochromism in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Fe</mi></mrow></math>-doped relaxor ferroelectric crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mrow><msub><mrow><mi mathvariant="normal">Zn</mi></mrow><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mrow><mi mathvariant="normal">Nb</mi></mrow><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mtext>-</mtext><msub><mrow><mi mathvariant="normal">PbTiO</mi></mrow><mn>3</mn></msub></mrow></math>

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Heteroepitaxial selective growth of ${In}_{x} {Ga}_{1 - x} As$ on $Si O_{2}$ -patterned GaAs(001) by molecular beam epitaxy

S. C. Lee; L. R. Dawson; S. R. J. Brueck; A. Stintz

J. Appl. Phys. 96, 4856–4865 (2004) https://doi.org/10.1063/1.1786677

Abstract

View articletitled, Heteroepitaxial selective growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">As</mi></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math>-patterned GaAs(001) by molecular beam epitaxy

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A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

Christophe J. Ortiz; Peter Pichler; Tim Fühner; Filadelfo Cristiano; Benjamin Colombeau; Nicholas E. B. Cowern; Alain Claverie

J. Appl. Phys. 96, 4866–4877 (2004) https://doi.org/10.1063/1.1786678

Abstract

View articletitled, A physically based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon

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Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

J. Appl. Phys. 96, 4878–4889 (2004) https://doi.org/10.1063/1.1787624

Abstract

View articletitled, Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy

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Raman study of $As$ outgassing and damage induced by ion implantation in $Zn$ -doped $GaAs$

D. Barba; V. Aimez; J. Beauvais; J. Beerens; D. Drouin; M. Chicoine; F. Schiettekatte

J. Appl. Phys. 96, 4890–4893 (2004) https://doi.org/10.1063/1.1803615

Abstract

View articletitled, Raman study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">As</mi></mrow></math> outgassing and damage induced by ion implantation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi></mrow></math>-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi></mrow></math>

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The channel effect: Coupling of the detonation and the precursor shock wave by precompression of the explosive

V. Tanguay; A. J. Higgins

J. Appl. Phys. 96, 4894–4902 (2004) https://doi.org/10.1063/1.1787913

Abstract

View articletitled, The channel effect: Coupling of the detonation and the precursor shock wave by precompression of the explosive

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Structural study of ${FeSi}_{2}$ under pressure

K. Takarabe; T. Ikai; Y. Mori; H. Udono; I. Kikuma

J. Appl. Phys. 96, 4903–4908 (2004) https://doi.org/10.1063/1.1778481

Abstract

View articletitled, Structural study of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">FeSi</mi></mrow><mn>2</mn></msub></mrow></math> under pressure

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Deep levels created by low energy electron irradiation in $4 H - SiC$

L. Storasta; J. P. Bergman; E. Janzén; A. Henry; J. Lu

J. Appl. Phys. 96, 4909–4915 (2004) https://doi.org/10.1063/1.1778819

Abstract

View articletitled, Deep levels created by low energy electron irradiation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>4</mn><mi mathvariant="normal">H</mi><mtext>-</mtext><mi mathvariant="normal">SiC</mi></mrow></math>

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Electrical activation of high-concentration aluminum implanted in 4H-SiC

Y. Negoro; T. Kimoto; H. Matsunami; F. Schmid; G. Pensl

J. Appl. Phys. 96, 4916–4922 (2004) https://doi.org/10.1063/1.1796518

Abstract

View articletitled, Electrical activation of high-concentration aluminum implanted in 4H-SiC

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Excited state dynamics of $\Pr^{3 +}$ in $Y V O_{4}$ crystals

Philippe Boutinaud; Rachid Mahiou; Enrico Cavalli; Marco Bettinelli

J. Appl. Phys. 96, 4923–4929 (2004) https://doi.org/10.1063/1.1797551

Abstract

View articletitled, Excited state dynamics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Y</mi><mi mathvariant="normal">V</mi><msub><mi mathvariant="normal">O</mi><mn>4</mn></msub></mrow></math> crystals

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Raman scattering and photoluminescence studies of $Er$ -implanted and $Er + O$ coimplanted $GaN$

S. F. Song; W. D. Chen; Chunguang Zhang; Liufang Bian; C. C. Hsu; Baoshan Ma; G. H. Li; Jianjun Zhu

J. Appl. Phys. 96, 4930–4934 (2004) https://doi.org/10.1063/1.1792387

Abstract

View articletitled, Raman scattering and photoluminescence studies of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Er</mi></mrow></math>-implanted and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Er</mi><mo>+</mo><mi mathvariant="normal">O</mi></mrow></math> coimplanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaN</mi></mrow></math>

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Low-energy nitrogen ion implantation of $InSb$

I. Mahboob; T. D. Veal; C. F. McConville

J. Appl. Phys. 96, 4935–4938 (2004) https://doi.org/10.1063/1.1792390

Abstract

View articletitled, Low-energy nitrogen ion implantation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InSb</mi></mrow></math>

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Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles

R. A. Camillo-Castillo; M. E. Law; K. S. Jones

J. Appl. Phys. 96, 4939–4944 (2004) https://doi.org/10.1063/1.1776624

Abstract

View articletitled, Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles

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Atomic force microscopy and x-ray photoelectron spectroscopy investigations of the morphology and chemistry of a $Pd {Cl}_{2} ∕ Sn {Cl}_{2}$ electroless plating catalysis system adsorbed onto shape memory alloy particles

J. F. Silvain; O. Fouassier; S. Lescaux

J. Appl. Phys. 96, 4945–4951 (2004) https://doi.org/10.1063/1.1787625

Abstract

View articletitled, Atomic force microscopy and x-ray photoelectron spectroscopy investigations of the morphology and chemistry of a <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pd</mi><msub><mi>Cl</mi><mn>2</mn></msub><mo>∕</mo><mi>Sn</mi><msub><mi>Cl</mi><mn>2</mn></msub></mrow></math> electroless plating catalysis system adsorbed onto shape memory alloy particles

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Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in $Si O_{2}$ by ion implantation

J. Żuk; H. Krzyżanowska; M. J. Clouter; M. Bromberek; H. Bubert; L. Rebohle; W. Skorupa

J. Appl. Phys. 96, 4952–4959 (2004) https://doi.org/10.1063/1.1794891

Abstract

View articletitled, Brillouin scattering and x-ray photoelectron studies of germanium nanoclusters synthesized in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> by ion implantation

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Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions

I. O. Usov; A. A. Suvorova; Y. A. Kudriavtsev; A. V. Suvorov

J. Appl. Phys. 96, 4960–4964 (2004) https://doi.org/10.1063/1.1803923

Abstract

View articletitled, Diffusion of boron in 6H and 4H SiC coimplanted with boron and nitrogen ions

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

The influence of $Cr$ doping on the charge-ordering state in bilayered ${LaSr}_{2} {Mn}_{2} O_{7}$

R. L. Zhang; B. C. Zhao; W. H. Song; Y. Q. Ma; J. Yang; Z. G. Sheng; J. M. Dai; Y. P. Sun

J. Appl. Phys. 96, 4965–4969 (2004) https://doi.org/10.1063/1.1794907

Abstract

View articletitled, The influence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cr</mi></mrow></math> doping on the charge-ordering state in bilayered <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">LaSr</mi></mrow><mn>2</mn></msub><msub><mrow><mi mathvariant="normal">Mn</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>7</mn></msub></mrow></math>

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Evidence for capture of holes into resonant states in boron-doped silicon

S. T. Yen; V. N. Tulupenko; E. S. Cheng; P. K. Chung; C. P. Lee; A. T. Dalakyan; K. A. Chao

J. Appl. Phys. 96, 4970–4975 (2004) https://doi.org/10.1063/1.1795985

Abstract

View articletitled, Evidence for capture of holes into resonant states in boron-doped silicon

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Electrical properties and microstructure of ternary $Ge ∕ Ti ∕ Al$ ohmic contacts to $p$ -type 4H–SiC

S. Tsukimoto; T. Sakai; Masanori Murakami

J. Appl. Phys. 96, 4976–4981 (2004) https://doi.org/10.1063/1.1797546

Abstract

View articletitled, Electrical properties and microstructure of ternary <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ge</mi><mo>∕</mo><mi mathvariant="normal">Ti</mi><mo>∕</mo><mi mathvariant="normal">Al</mi></mrow></math> ohmic contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type 4H–SiC

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Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

Yuan Lu; Guangwei Cong; Xianglin Liu; Da-Cheng Lu; Qinsheng Zhu; Xiaohui Wang; Jiejun Wu; Zhanguo Wang

J. Appl. Phys. 96, 4982–4988 (2004) https://doi.org/10.1063/1.1787588

Abstract

View articletitled, Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer

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Studies on high resolution x-ray diffraction, optical and transport properties of $In {As}_{x} {Sb}_{1 - x} ∕ Ga As$ $(x ⩽ 0.06)$ heterostructure grown using liquid phase epitaxy

V. K. Dixit; Bhavtosh Bansal; V. Venkataraman; H. L. Bhat; K. S. Chandrasekharan; B. M. Arora

J. Appl. Phys. 96, 4989–4997 (2004) https://doi.org/10.1063/1.1784620

Abstract

View articletitled, Studies on high resolution x-ray diffraction, optical and transport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">In</mi><msub><mi mathvariant="normal">As</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Sb</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">As</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mi>x</mi><mo>⩽</mo><mn>0.06</mn><mo>)</mo></mrow></math> heterostructure grown using liquid phase epitaxy

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Analytic band Monte Carlo model for electron transport in $Si$ including acoustic and optical phonon dispersion

Eric Pop; Robert W. Dutton; Kenneth E. Goodson

J. Appl. Phys. 96, 4998–5005 (2004) https://doi.org/10.1063/1.1788838

Abstract

View articletitled, Analytic band Monte Carlo model for electron transport in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> including acoustic and optical phonon dispersion

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Resonant tunneling through defects in an insulator: Modeling and solar cell applications

Chu-Wei Jiang; Martin A. Green; Eun-Chel Cho; Gavin Conibeer

J. Appl. Phys. 96, 5006–5012 (2004) https://doi.org/10.1063/1.1797542

Abstract

View articletitled, Resonant tunneling through defects in an insulator: Modeling and solar cell applications

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Study of photoelectron spectroscopy from extremely uniform $Si$ nanoislands on $Si (111)$ $7 \times 7$ substrate

R. Negishi; M. Suzuki; Y. Shigeta

J. Appl. Phys. 96, 5013–5016 (2004) https://doi.org/10.1063/1.1801156

Abstract

View articletitled, Study of photoelectron spectroscopy from extremely uniform <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> nanoislands on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><mo>(</mo><mn>111</mn><mo>)</mo></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>7</mn><mo>×</mo><mn>7</mn></mrow></math> substrate

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Temperature dependence of breakdown voltage in ${Al}_{x} {Ga}_{1 - x} As$

C. Groves; C. N. Harrison; J. P. R. David; G. J. Rees

J. Appl. Phys. 96, 5017–5019 (2004) https://doi.org/10.1063/1.1803944

Abstract

View articletitled, Temperature dependence of breakdown voltage in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Al</mi></mrow><mi>x</mi></msub><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">As</mi></mrow></math>

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Vibrational properties of hydrogen atom adsorbed on Cu(111) and on Ir(111) surfaces

Kunihiro Nobuhara; Hideaki Kasai; Hiroshi Nakanishi; Wilson Agerico Diño

J. Appl. Phys. 96, 5020–5025 (2004) https://doi.org/10.1063/1.1794905

Abstract

View articletitled, Vibrational properties of hydrogen atom adsorbed on Cu(111) and on Ir(111) surfaces

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Exploitation of the thermotunnel effect for energy scavenging

Ghislain Despesse; Thomas Jager

J. Appl. Phys. 96, 5026–5031 (2004) https://doi.org/10.1063/1.1785841

Abstract

View articletitled, Exploitation of the thermotunnel effect for energy scavenging

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Highly resolved quantized double-layer charging of relatively larger dodecanethiol-passivated gold quantum dots

Nirmalya K. Chaki; Bhalchandra Kakade; Jadab Sharma; Subhramannia Mahima; Kunjukrishna P. Vijayamohanan; Santosh K. Haram

J. Appl. Phys. 96, 5032–5036 (2004) https://doi.org/10.1063/1.1781763

Abstract

View articletitled, Highly resolved quantized double-layer charging of relatively larger dodecanethiol-passivated gold quantum dots

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Hole effective mass in strained ${Si}_{1 - x} C_{x}$ alloys

C. Y. Lin; S. T. Chang; C. W. Liu

J. Appl. Phys. 96, 5037–5041 (2004) https://doi.org/10.1063/1.1796516

Abstract

View articletitled, Hole effective mass in strained <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">C</mi><mi>x</mi></msub></mrow></math> alloys

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Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

C. Petit; G. Salace; D. Vuillaume

J. Appl. Phys. 96, 5042–5049 (2004) https://doi.org/10.1063/1.1775299

Abstract

View articletitled, Aluminum, oxide, and silicon phonons by inelastic electron tunneling spectroscopy on metal-oxide-semiconductor tunnel junctions: Accurate determination and effect of electrical stress

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Correlation between magnetization performance and magnetic microstructure of patterned permalloy films fabricated by microcontact printing

Takumi Sannomiya; Ji Shi; Yoshio Nakamura; Osamu Nittono

J. Appl. Phys. 96, 5050–5055 (2004) https://doi.org/10.1063/1.1796512

Abstract

View articletitled, Correlation between magnetization performance and magnetic microstructure of patterned permalloy films fabricated by microcontact printing

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Thickness dependence of the magnetic properties of $MnAs$ films on $GaAs (001)$ and $GaAs (113) A$ ⁠: Role of a natural array of ferromagnetic stripes

L. Däweritz; L. Wan; B. Jenichen; C. Herrmann; J. Mohanty; A. Trampert; K. H. Ploog

J. Appl. Phys. 96, 5056–5062 (2004) https://doi.org/10.1063/1.1790576

Abstract

View articletitled, Thickness dependence of the magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">MnAs</mi></mrow></math> films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mo>(</mo><mrow><mn>001</mn></mrow><mo>)</mo></mrow></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi><mrow><mo>(</mo><mrow><mn>113</mn></mrow><mo>)</mo></mrow><mi mathvariant="normal">A</mi></mrow></math>⁠: Role of a natural array of ferromagnetic stripes

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Effect of the substrate temperature on the properties of $RE - Fe - B$ thin film magnets

L. Castaldi; M. R. J. Gibbs; H. A. Davies

J. Appl. Phys. 96, 5063–5068 (2004) https://doi.org/10.1063/1.1775044

Abstract

View articletitled, Effect of the substrate temperature on the properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">RE</mi><mo>–</mo><mi mathvariant="normal">Fe</mi><mo>–</mo><mi mathvariant="normal">B</mi></mrow></math> thin film magnets

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Calculations using the helical filamentary structure for current distributions of a six around one superconducting strand cable and a multifilamentary composite

Toshiharu Tominaka

J. Appl. Phys. 96, 5069–5080 (2004) https://doi.org/10.1063/1.1782964

Abstract

View articletitled, Calculations using the helical filamentary structure for current distributions of a six around one superconducting strand cable and a multifilamentary composite

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Regular and random magnetic resonance force microscopy signal with a cantilever oscillating parallel to a sample surface

G. P. Berman; V. N. Gorshkov; V. I. Tsifrinovich

J. Appl. Phys. 96, 5081–5084 (2004) https://doi.org/10.1063/1.1787141

Abstract

View articletitled, Regular and random magnetic resonance force microscopy signal with a cantilever oscillating parallel to a sample surface

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Magnetism and nuclear magnetic resonance of hectorite and montmorillonite layered silicates

E. M. Levin; S.-S. Hou; S. L. Bud’ko; K. Schmidt-Rohr

J. Appl. Phys. 96, 5085–5092 (2004) https://doi.org/10.1063/1.1794364

Abstract

View articletitled, Magnetism and nuclear magnetic resonance of hectorite and montmorillonite layered silicates

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Structural and magnetic properties of insulating ${Zn}_{1−x} {Co}_{x} O$ thin films

Zhigang Yin; Nuofu Chen; Chunlin Chai; Fei Yang

J. Appl. Phys. 96, 5093–5096 (2004) https://doi.org/10.1063/1.1756212

Abstract

View articletitled, Structural and magnetic properties of insulating <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math> thin films

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Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase ${Ti}_{1−x} {Co}_{x} O_{2}$

Y. Yamada; H. Toyosaki; A. Tsukazaki; T. Fukumura; K. Tamura; Y. Segawa; K. Nakajima; T. Aoyama; T. Chikyow; T. Hasegawa; H. Koinuma; M. Kawasaki

J. Appl. Phys. 96, 5097–5102 (2004) https://doi.org/10.1063/1.1758310

Abstract

View articletitled, Epitaxial growth and physical properties of a room temperature ferromagnetic semiconductor: Anatase phase <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math>

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

The morphotropic phase boundary and dielectric properties of the $x Pb ({Zr}_{1 ∕ 2} {Ti}_{1 ∕ 2}) O_{3} - (1 - x) Pb ({Ni}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3}$ perovskite solid solution

Naratip Vittayakorn; Gobwute Rujijanagul; Xiaoli Tan; Meagen A. Marquardt; David P. Cann

J. Appl. Phys. 96, 5103–5109 (2004) https://doi.org/10.1063/1.1796511

Abstract

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Polarized Raman scattering of highly [111]-oriented $Pb (Zr, Ti) O_{3}$ thin films in the rhombohedral-phase field

Hyunjung Yi; Min G. Kim; Jung H. Park; Hyun M. Jang

J. Appl. Phys. 96, 5110–5116 (2004) https://doi.org/10.1063/1.1790573

Abstract

View articletitled, Polarized Raman scattering of highly [111]-oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mi mathvariant="normal">Zr</mi><mo>,</mo><mi mathvariant="normal">Ti</mi><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films in the rhombohedral-phase field

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Monitoring of cement hydration by broadband time-domain-reflectometry dielectric spectroscopy

N. E. Hager, III; R. C. Domszy

J. Appl. Phys. 96, 5117–5128 (2004) https://doi.org/10.1063/1.1797549

Abstract

View articletitled, Monitoring of cement hydration by broadband time-domain-reflectometry dielectric spectroscopy

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Are microbubbles necessary for the breakdown of liquid water subjected to a submicrosecond pulse?

R. P. Joshi; J. Qian; G. Zhao; J. Kolb; K. H. Schoenbach; E. Schamiloglu; J. Gaudet

J. Appl. Phys. 96, 5129–5139 (2004) https://doi.org/10.1063/1.1792391

Abstract

View articletitled, Are microbubbles necessary for the breakdown of liquid water subjected to a submicrosecond pulse?

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Temperature stability of the piezoelectric and elastic response of dc biased [001] and [110] oriented $Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} ‐ {PbTiO}_{3}$ single crystals

Ahmed Amin; Dwight Viehland

J. Appl. Phys. 96, 5140–5143 (2004) https://doi.org/10.1063/1.1789271

Abstract

View articletitled, Temperature stability of the piezoelectric and elastic response of dc biased [001] and [110] oriented <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Zn</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi>Nb</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mtext>‐</mtext><msub><mi>PbTiO</mi><mn>3</mn></msub></mrow></math> single crystals

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NANOSCALE SCIENCE AND DESIGN

Parametric investigation of laser nanoimprinting of hemispherical cavity arrays

L. P. Li; Y. F. Lu; D. W. Doerr; D. R. Alexander; X. Y. Chen

J. Appl. Phys. 96, 5144–5151 (2004) https://doi.org/10.1063/1.1796515

Abstract

View articletitled, Parametric investigation of laser nanoimprinting of hemispherical cavity arrays

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In situ synthesis of carbon nanotubes decorated with palladium nanoparticles using arc-discharge in solution method

Debasis Bera; Suresh C. Kuiry; Matthew McCutchen; Sudipta Seal; Helge Heinrich; Grady C. Slane

J. Appl. Phys. 96, 5152–5157 (2004) https://doi.org/10.1063/1.1786347

Abstract

View articletitled, In situ synthesis of carbon nanotubes decorated with palladium nanoparticles using arc-discharge in solution method

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Effect of residual catalyst on the vibrational modes of single-walled carbon nanotubes

L. E. McNeil; H. Park; J. P. Lu; M. J. Peters

J. Appl. Phys. 96, 5158–5162 (2004) https://doi.org/10.1063/1.1792805

Abstract

View articletitled, Effect of residual catalyst on the vibrational modes of single-walled carbon nanotubes

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Optical response of mixed $Ag - Cu$ nanocrystals produced by pulsed laser deposition

J. Gonzalo; D. Babonneau; C. N. Afonso; J.-P. Barnes

J. Appl. Phys. 96, 5163–5168 (2004) https://doi.org/10.1063/1.1792810

Abstract

View articletitled, Optical response of mixed <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi><mtext>-</mtext><mi mathvariant="normal">Cu</mi></mrow></math> nanocrystals produced by pulsed laser deposition

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Influence of composition on the piezoelectric effect and on the conduction band energy levels of ${In}_{x} {Ga}_{1 - x} As ∕ GaAs$ quantum dots

M. A. Migliorato; D. Powell; S. L. Liew; A. G. Cullis; P. Navaretti; M. J. Steer; M. Hopkinson; M. Fearn; J. H. Jefferson

J. Appl. Phys. 96, 5169–5172 (2004) https://doi.org/10.1063/1.1793333

Abstract

View articletitled, Influence of composition on the piezoelectric effect and on the conduction band energy levels of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">In</mi></mrow><mi>x</mi></msub><msub><mrow><mi mathvariant="normal">Ga</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">As</mi><mo>∕</mo><mi mathvariant="normal">GaAs</mi></mrow></math> quantum dots

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Reversal mechanisms and metastable states in magnetic nanoelements

X. Liu; J. N. Chapman; S. McVitie; C. D. W. Wilkinson

J. Appl. Phys. 96, 5173–5179 (2004) https://doi.org/10.1063/1.1803102

Abstract

View articletitled, Reversal mechanisms and metastable states in magnetic nanoelements

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Quantum capacitance in nanoscale device modeling

D. L. John; L. C. Castro; D. L. Pulfrey

J. Appl. Phys. 96, 5180–5184 (2004) https://doi.org/10.1063/1.1803614

Abstract

View articletitled, Quantum capacitance in nanoscale device modeling

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Nanoscale GaN whiskers fabricated by photoelectrochemical etching

J. A. Grenko; C. L. Reynolds, Jr.; R. Schlesser; J. J. Hren; K. Bachmann; Z. Sitar; P. G. Kotula

J. Appl. Phys. 96, 5185–5188 (2004) https://doi.org/10.1063/1.1788841

Abstract

View articletitled, Nanoscale GaN whiskers fabricated by photoelectrochemical etching

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Deposition of palladium nanoparticles on the pore walls of anodic alumina using sequential electroless deposition

A. Johansson; J. Lu; J.-O. Carlsson; M. Boman

J. Appl. Phys. 96, 5189–5194 (2004) https://doi.org/10.1063/1.1788843

Abstract

View articletitled, Deposition of palladium nanoparticles on the pore walls of anodic alumina using sequential electroless deposition

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Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si

T. I. Kamins; D. A. A. Ohlberg; R. Stanley Williams

J. Appl. Phys. 96, 5195–5201 (2004) https://doi.org/10.1063/1.1789626

Abstract

View articletitled, Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si

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Thermal transport cross section and phase function of longitudinal phonons for scattering by nanoparticles and microparticles

Ravi S. Prasher

J. Appl. Phys. 96, 5202–5211 (2004) https://doi.org/10.1063/1.1789633

Abstract

View articletitled, Thermal transport cross section and phase function of longitudinal phonons for scattering by nanoparticles and microparticles

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Ion-beam-induced embedded nanostructures and nanoscale mixing

B. Satpati; P. V. Satyam; T. Som; B. N. Dev

J. Appl. Phys. 96, 5212–5216 (2004) https://doi.org/10.1063/1.1794899

Abstract

View articletitled, Ion-beam-induced embedded nanostructures and nanoscale mixing

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Assembly of $FePt$ $L 1_{}$ nanoparticles grown on $MgO (110)$ with self-organized groove structure

S. Okamoto; O. Kitakami; T. Miyazaki; Y. Shimada; Y. K. Takahashi; K. Hono

J. Appl. Phys. 96, 5217–5221 (2004) https://doi.org/10.1063/1.1794903

Abstract

View articletitled, Assembly of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">FePt</mi></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>L</mi><msub><mn>1</mn><mn></mn></msub></mrow></math> nanoparticles grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">MgO</mi><mrow><mo>(</mo><mrow><mn>110</mn></mrow><mo>)</mo></mrow></mrow></math> with self-organized groove structure

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Microcavity-like leaky mode emission from a planar optical waveguide made of luminescent silicon nanocrystals

J. Valenta; T. Ostatnický; I. Pelant; R. G. Elliman; J. Linnros; B. Hönerlage

J. Appl. Phys. 96, 5222–5225 (2004) https://doi.org/10.1063/1.1795984

Abstract

View articletitled, Microcavity-like leaky mode emission from a planar optical waveguide made of luminescent silicon nanocrystals

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Dynamic optical probing of the magnetic anisotropy of nickel-ferrite nanoparticles

Yu. L. Raikher; V. I. Stepanov; J. Depeyrot; M. H. Sousa; F. A. Tourinho; E. Hasmonay; R. Perzynski

J. Appl. Phys. 96, 5226–5233 (2004) https://doi.org/10.1063/1.1790574

Abstract

View articletitled, Dynamic optical probing of the magnetic anisotropy of nickel-ferrite nanoparticles

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Fabrication temperature effect of the field emission from closed and open tip carbon nanotube arrays fabricated on anodic aluminum oxide films

Dong Won Kang; Jung Sang Suh

J. Appl. Phys. 96, 5234–5238 (2004) https://doi.org/10.1063/1.1804622

Abstract

View articletitled, Fabrication temperature effect of the field emission from closed and open tip carbon nanotube arrays fabricated on anodic aluminum oxide films

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Formation, structure, and phonon confinement effect of nanocrystalline ${Si}_{1 - x} {Ge}_{x}$ in $Si O_{2} ‐ Si ‐ Ge$ cosputtered films

Y. M. Yang; X. L. Wu; G. G. Siu; G. S. Huang; J. C. Shen; D. S. Hu

J. Appl. Phys. 96, 5239–5242 (2004) https://doi.org/10.1063/1.1772888

Abstract

View articletitled, Formation, structure, and phonon confinement effect of nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>x</mi></msub></mrow></math> in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mtext>‐</mtext><mi mathvariant="normal">Si</mi><mtext>‐</mtext><mi mathvariant="normal">Ge</mi></mrow></math> cosputtered films

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DEVICE PHYSICS (PACS 85)

Optimized $GaAs ∕ AlGaAs$ light-emitting diodes and high efficiency wafer-fused optical up-conversion devices

D. Ban; H. Luo; H. C. Liu; Z. R. Wasilewski; A. J. SpringThorpe; R. Glew; M. Buchanan

J. Appl. Phys. 96, 5243–5248 (2004) https://doi.org/10.1063/1.1785867

Abstract

View articletitled, Optimized <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi><mo>∕</mo><mi mathvariant="normal">AlGaAs</mi></mrow></math> light-emitting diodes and high efficiency wafer-fused optical up-conversion devices

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An experimental study on the $ZnO$ /sapphire layered surface acoustic wave device

Tsung-Tsong Wu; Wei-Shan Wang

J. Appl. Phys. 96, 5249–5253 (2004) https://doi.org/10.1063/1.1785842

Abstract

View articletitled, An experimental study on the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">ZnO</mi></mrow></math>/sapphire layered surface acoustic wave device

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Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices

Neil M. Zimmerman; Emmanouel Hourdakis; Yuki Ono; Akira Fujiwara; Yasuo Takahashi

J. Appl. Phys. 96, 5254–5266 (2004) https://doi.org/10.1063/1.1791758

Abstract

View articletitled, Error mechanisms and rates in tunable-barrier single-electron turnstiles and charge-coupled devices

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Generation and behavior of pure-edge threading misfit dislocations in ${In}_{x} {Ga}_{1 - x} N ∕ Ga N$ multiple quantum wells

W. Lü; D. B. Li; C. R. Li; Z. Zhang

J. Appl. Phys. 96, 5267–5270 (2004) https://doi.org/10.1063/1.1803633

Abstract

View articletitled, Generation and behavior of pure-edge threading misfit dislocations in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">In</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> multiple quantum wells

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Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

D. Jiménez; B. Iñíguez; J. Suñé; J. J. Sáenz

J. Appl. Phys. 96, 5271–5276 (2004) https://doi.org/10.1063/1.1778485

Abstract

View articletitled, Analog performance of the nanoscale double-gate metal-oxide-semiconductor field-effect-transistor near the ultimate scaling limits

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Electronic transport in field-effect transistors of sexithiophene

P. Stallinga; H. L. Gomes; F. Biscarini; M. Murgia; D. M. de Leeuw

J. Appl. Phys. 96, 5277–5283 (2004) https://doi.org/10.1063/1.1789279

Abstract

View articletitled, Electronic transport in field-effect transistors of sexithiophene

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Residual gas analysis of a dc plasma for carbon nanofiber growth

Brett A. Cruden; Alan M. Cassell; David B. Hash; M. Meyyappan

J. Appl. Phys. 96, 5284–5292 (2004) https://doi.org/10.1063/1.1779975

Abstract

View articletitled, Residual gas analysis of a dc plasma for carbon nanofiber growth

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Effect of impurity incorporation on crystallization in $AlN$ sublimation epitaxy

A. Kakanakova-Georgieva; G. K. Gueorguiev; R. Yakimova; E. Janzén

J. Appl. Phys. 96, 5293–5297 (2004) https://doi.org/10.1063/1.1785840

Abstract

View articletitled, Effect of impurity incorporation on crystallization in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">AlN</mi></mrow></math> sublimation epitaxy

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Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

Kaupo Kukli; Jaan Aarik; Mikko Ritala; Teet Uustare; Timo Sajavaara; Jun Lu; Jonas Sundqvist; Aleks Aidla; Lembit Pung; Anders Hårsta; Markku Leskelä

J. Appl. Phys. 96, 5298–5307 (2004) https://doi.org/10.1063/1.1796513

Abstract

View articletitled, Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

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Production of high-quality $ZnO$ films by the two-step annealing method

J. D. Ye; S. L. Gu; S. M. Zhu; F. Qin; S. M. Liu; W. Liu; X. Zhou; L. Q. Hu; R. Zhang; Y. Shi; Y. D. Zheng

J. Appl. Phys. 96, 5308–5310 (2004) https://doi.org/10.1063/1.1791755

Abstract

View articletitled, Production of high-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">ZnO</mi></mrow></math> films by the two-step annealing method

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Spectral self-interference fluorescence microscopy

L. Moiseev; C. R. Cantor; M. I. Aksun; M. Dogan; B. B. Goldberg; A. K. Swan; M. S. Ünlü

J. Appl. Phys. 96, 5311–5315 (2004) https://doi.org/10.1063/1.1786665

Abstract

View articletitled, Spectral self-interference fluorescence microscopy

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Femtosecond laser ablation properties of borosilicate glass

Adela Ben-Yakar; Robert L. Byer

J. Appl. Phys. 96, 5316–5323 (2004) https://doi.org/10.1063/1.1787145

Abstract

View articletitled, Femtosecond laser ablation properties of borosilicate glass

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Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: $Eu Ti O_{3}$ on $Sr Ti O_{3}$

Huan-Hua Wang; Aaron Fleet; J. D. Brock; Darren Dale; Yuri Suzuki

J. Appl. Phys. 96, 5324–5328 (2004) https://doi.org/10.1063/1.1794362

Abstract

View articletitled, Nearly strain-free heteroepitaxial system for fundamental studies of pulsed laser deposition: <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Eu</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Improved three-dimensional optical model for thin-film silicon solar cells

J. Springer; A. Poruba; M. Vanecek

J. Appl. Phys. 96, 5329–5337 (2004) https://doi.org/10.1063/1.1784555

Abstract

View articletitled, Improved three-dimensional optical model for thin-film silicon solar cells

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Metamaterial exhibiting left-handed properties over multiple frequency bands

Hongsheng Chen; Lixin Ran; Jiangtao Huangfu; Xianmin Zhang; Kangsheng Chen; Tomasz M. Grzegorczyk; Jin Au Kong

J. Appl. Phys. 96, 5338–5340 (2004) https://doi.org/10.1063/1.1803942

Abstract

View articletitled, Metamaterial exhibiting left-handed properties over multiple frequency bands

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Nonlocal electrostatics in heterogeneous suspensions using a point-dipole model

Karl von Pfeil; Daniel J. Klingenberg

J. Appl. Phys. 96, 5341–5348 (2004) https://doi.org/10.1063/1.1778483

Abstract

View articletitled, Nonlocal electrostatics in heterogeneous suspensions using a point-dipole model

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Burstein-Moss shift in impurity-compensated bulk ${Ga}_{1 - x} {In}_{x} Sb$ substrates

R. Pino; Y. Ko; P. S. Dutta; Shekhar Guha; Leonel P. Gonzalez

J. Appl. Phys. 96, 5349–5352 (2004) https://doi.org/10.1063/1.1796538

Abstract

View articletitled, Burstein-Moss shift in impurity-compensated bulk <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mi mathvariant="normal">In</mi><mi>x</mi></msub><mi mathvariant="normal">Sb</mi></mrow></math> substrates

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Growth of pinhole-free epitaxial $Yb$ and $Er$ silicide thin films on atomically clean $(111) Si$

W. C. Tsai; K. S. Chi; L. J. Chen

J. Appl. Phys. 96, 5353–5356 (2004) https://doi.org/10.1063/1.1769604

Abstract

View articletitled, Growth of pinhole-free epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Yb</mi></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Er</mi></mrow></math> silicide thin films on atomically clean <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mo>(</mo><mrow><mn>111</mn></mrow><mo>)</mo></mrow><mi mathvariant="normal">Si</mi></mrow></math>

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Rhenium ohmic contacts on 6H-SiC

G. Y. McDaniel; S. T. Fenstermaker; W. V. Lampert; P. H. Holloway

J. Appl. Phys. 96, 5357–5364 (2004) https://doi.org/10.1063/1.1797550

Abstract

View articletitled, Rhenium ohmic contacts on 6H-SiC

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Demagnetizing factors for completely shielded rectangular prisms

Enric Pardo; Du-Xing Chen; Alvaro Sanchez

J. Appl. Phys. 96, 5365–5369 (2004) https://doi.org/10.1063/1.1787134

Abstract

View articletitled, Demagnetizing factors for completely shielded rectangular prisms

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COMMUNICATIONS

Inverted hysteresis in exchange biased ${Cr}_{2} O_{3}$ coated ${CrO}_{2}$ particles

R. K. Zheng; Hui Liu; Y. Wang; X. X. Zhang

J. Appl. Phys. 96, 5370–5372 (2004) https://doi.org/10.1063/1.1795983

Abstract

View articletitled, Inverted hysteresis in exchange biased <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">Cr</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> coated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">CrO</mi></mrow><mn>2</mn></msub></mrow></math> particles

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The dynamic characteristics of sulfur sensitization centers in T-grain $AgBrI$ microcrystals

Guang-Sheng Fu; Shao-Peng Yang; Xiao-Wei Li; Rong-Juan Liu; Xiao-Dong Tian; Li Han

J. Appl. Phys. 96, 5373–5375 (2004) https://doi.org/10.1063/1.1801154

Abstract

View articletitled, The dynamic characteristics of sulfur sensitization centers in T-grain <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">AgBrI</mi></mrow></math> microcrystals

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Analytic, graphical, and geometric solutions for the band edges of one-dimensional photonic band gap materials

Frank Szmulowicz

J. Appl. Phys. 96, 5376–5378 (2004) https://doi.org/10.1063/1.1803626

Abstract

View articletitled, Analytic, graphical, and geometric solutions for the band edges of one-dimensional photonic band gap materials

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Absence of room temperature ferromagnetism in bulk Mn-doped ZnO

S. Kolesnik; B. Dabrowski

J. Appl. Phys. 96, 5379–5381 (2004) https://doi.org/10.1063/1.1755428

Abstract

View articletitled, Absence of room temperature ferromagnetism in bulk Mn-doped ZnO

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APPLIED PHYSICS REVIEWS - FOCUSED REVIEW

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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