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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Two-dimensional distributed feedback lasers using a broadband, red polyfluorene gain medium

G. Heliotis; R. Xia; D. D. C. Bradley; G. A. Turnbull; I. D. W. Samuel; P. Andrew; W. L. Barnes

J. Appl. Phys. 96, 6959–6965 (2004) https://doi.org/10.1063/1.1811374

Abstract

View articletitled, Two-dimensional distributed feedback lasers using a broadband, red polyfluorene gain medium

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Characterization of photonic crystal waveguides based on Fabry-Pérot interference

Iwan Märki; Martin Salt; Ross Stanley; Urs Staufer; Hans-Peter Herzig

J. Appl. Phys. 96, 6966–6969 (2004) https://doi.org/10.1063/1.1810204

Abstract

View articletitled, Characterization of photonic crystal waveguides based on Fabry-Pérot interference

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A charge-coupled-device-based heterodyne technique for parallel photodisplacement imaging

Toshihiko Nakata; Takanori Ninomiya

J. Appl. Phys. 96, 6970–6980 (2004) https://doi.org/10.1063/1.1806534

Abstract

View articletitled, A charge-coupled-device-based heterodyne technique for parallel photodisplacement imaging

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Wormhole liquid crystal display modes

M. Inaba; H. Okada; H. Onnagawa

J. Appl. Phys. 96, 6981–6986 (2004) https://doi.org/10.1063/1.1814807

Abstract

View articletitled, Wormhole liquid crystal display modes

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Angular and wavelength selectivity of parasitic holograms in cerium doped strontium barium niobate

Mostafa A. Ellabban; Martin Fally; Mirco Imlau; Theo Woike; Romano A. Rupp; Torsten Granzow

J. Appl. Phys. 96, 6987–6993 (2004) https://doi.org/10.1063/1.1815383

Abstract

View articletitled, Angular and wavelength selectivity of parasitic holograms in cerium doped strontium barium niobate

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

A time-resolved Langmuir double-probe method for the investigation of pulsed magnetron discharges

Th. Welzel; Th. Dunger; H. Kupfer; F. Richter

J. Appl. Phys. 96, 6994–7001 (2004) https://doi.org/10.1063/1.1808481

Abstract

View articletitled, A time-resolved Langmuir double-probe method for the investigation of pulsed magnetron discharges

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Coupling effects of the flow and electric fields in electrostatic precipitators

Parsa Zamankhan; Goodarz Ahmadi; Fa-Gung Fan

J. Appl. Phys. 96, 7002–7010 (2004) https://doi.org/10.1063/1.1810201

Abstract

View articletitled, Coupling effects of the flow and electric fields in electrostatic precipitators

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Physics of high-pressure helium and argon radio-frequency plasmas

M. Moravej; X. Yang; G. R. Nowling; J. P. Chang; R. F. Hicks; S. E. Babayan

J. Appl. Phys. 96, 7011–7017 (2004) https://doi.org/10.1063/1.1815047

Abstract

View articletitled, Physics of high-pressure helium and argon radio-frequency plasmas

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Optical properties of correlation-induced paramagnetic FeAl alloy

Joo Yull Rhee

J. Appl. Phys. 96, 7018–7021 (2004) https://doi.org/10.1063/1.1810639

Abstract

View articletitled, Optical properties of correlation-induced paramagnetic FeAl alloy

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Optical and magnetic properties of ${Mn}^{+}$ -implanted $GaAs$

Yoon Shon; Y. S. Park; K. J. Chung; D. J. Fu; D. Y. Kim; H. S. Kim; H. J. Kim; T. W. Kang; Yongmin Kim; X. J. Fan; Y. J. Park

J. Appl. Phys. 96, 7022–7028 (2004) https://doi.org/10.1063/1.1804227

Abstract

View articletitled, Optical and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msup><mrow><mi mathvariant="normal">Mn</mi></mrow><mo>+</mo></msup></mrow></math>-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaAs</mi></mrow></math>

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Polarization filtering by nonpolar $M$ -plane $GaN$ films on ${LiAlO}_{2}$

Pranob Misra; Yue Jun Sun,; Oliver Brandt; Holger T. Grahn

J. Appl. Phys. 96, 7029–7035 (2004) https://doi.org/10.1063/1.1808483

Abstract

View articletitled, Polarization filtering by nonpolar <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>M</mi></mrow></math>-plane <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">GaN</mi></mrow></math> films on <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mrow><mi mathvariant="normal">LiAlO</mi></mrow><mn>2</mn></msub></mrow></math>

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A comparison of plasma-activated $N_{2} ∕ O_{2}$ and $N_{2} O ∕ O_{2}$ mixtures for use in ZnO:N synthesis by chemical vapor deposition

T. M. Barnes; J. Leaf; S. Hand; C. Fry; C. A. Wolden

J. Appl. Phys. 96, 7036–7044 (2004) https://doi.org/10.1063/1.1804614

Abstract

View articletitled, A comparison of plasma-activated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">N</mi><mn>2</mn></msub><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">N</mi><mn>2</mn></msub><mi mathvariant="normal">O</mi><mo>∕</mo><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> mixtures for use in ZnO:N synthesis by chemical vapor deposition

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Boron-enhanced blistering and exfoliation in hydrogen-implanted $Sr Ti O_{3}$

Jung-Kun Lee; Richard D. Averitt; Michael Nastasi

J. Appl. Phys. 96, 7045–7051 (2004) https://doi.org/10.1063/1.1804623

Abstract

View articletitled, Boron-enhanced blistering and exfoliation in hydrogen-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Sr</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>

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Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs

J. H. Dias da Silva; R. R. Campomanes; D. M. G. Leite; Farida Orapunt; Stephen K. O’Leary

J. Appl. Phys. 96, 7052–7059 (2004) https://doi.org/10.1063/1.1797541

Abstract

View articletitled, Relationship between the optical gap and the optical-absorption tail breadth in amorphous GaAs

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Conversion of $p$ -type to $n$ -type diamond by exposure to a deuterium plasma

R. Kalish; C. Saguy; C. Cytermann; J. Chevallier; Z. Teukam; F. Jomard; T. Kociniewski; D. Ballutaud; J. E. Butler; C. Baron; A. Deneuville

J. Appl. Phys. 96, 7060–7065 (2004) https://doi.org/10.1063/1.1811777

Abstract

View articletitled, Conversion of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math>-type diamond by exposure to a deuterium plasma

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The study of mass transport of acetone in polycarbonate

Hao Ouyang; Ming-Tsang Wu; Wen Ouyang

J. Appl. Phys. 96, 7066–7070 (2004) https://doi.org/10.1063/1.1811782

Abstract

View articletitled, The study of mass transport of acetone in polycarbonate

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Real-time observation of initial stages of copper film growth on silicon oxide using reflection high-energy electron diffraction

Jason T. Drotar; T.-M. Lu; G.-C. Wang

J. Appl. Phys. 96, 7071–7079 (2004) https://doi.org/10.1063/1.1811785

Abstract

View articletitled, Real-time observation of initial stages of copper film growth on silicon oxide using reflection high-energy electron diffraction

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Hydrogen diffusion at moderate temperatures in $p$ -type Czochralski silicon

Y. L. Huang; Y. Ma; R. Job; A. G. Ulyashin

J. Appl. Phys. 96, 7080–7086 (2004) https://doi.org/10.1063/1.1812379

Abstract

View articletitled, Hydrogen diffusion at moderate temperatures in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type Czochralski silicon

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Misfit dislocation formation in the $Al Ga N ∕ Ga N$ heterointerface

J. A. Floro; D. M. Follstaedt; P. Provencio; S. J. Hearne; S. R. Lee

J. Appl. Phys. 96, 7087–7094 (2004) https://doi.org/10.1063/1.1812361

Abstract

View articletitled, Misfit dislocation formation in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Al</mi><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi></mrow></math> heterointerface

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“Migration energy” for impurity diffusion in crystalline solids: A closer look

Panchapakesan Ramanarayanan; Balaji Srinivasan; Kyeongjae Cho; Bruce M. Clemens

J. Appl. Phys. 96, 7095–7107 (2004) https://doi.org/10.1063/1.1809254

Abstract

View articletitled, “Migration energy” for impurity diffusion in crystalline solids: A closer look

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Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate

Z. X. Mei; Y. Wang; X. L. Du; M. J. Ying; Z. Q. Zeng; H. Zheng; J. F. Jia; Q. K. Xue; Z. Zhang

J. Appl. Phys. 96, 7108–7111 (2004) https://doi.org/10.1063/1.1812362

Abstract

View articletitled, Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate

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Influence of the photodepoling parameters on quasiphase-matched second-harmonic generation and optical parametric fluorescence in polymer channel waveguides

G. Martin; O. Alibart; R. Hierle; D. Josse; P. Baldi; J. Zyss

J. Appl. Phys. 96, 7112–7117 (2004) https://doi.org/10.1063/1.1809770

Abstract

View articletitled, Influence of the photodepoling parameters on quasiphase-matched second-harmonic generation and optical parametric fluorescence in polymer channel waveguides

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Microstructural properties and atomic arrangements in GaN/sapphire and ${Al}_{x} {Ga}_{1 - x} N ∕ Al N ∕ Ga N ∕ sapphire$ heterostructures

T. W. Kim; D. U. Lee; H. S. Lee; J. Y. Lee; Jae-Hoon Lee; Jung-Hee Lee

J. Appl. Phys. 96, 7118–7121 (2004) https://doi.org/10.1063/1.1812352

Abstract

View articletitled, Microstructural properties and atomic arrangements in GaN/sapphire and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Ga</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Al</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mi mathvariant="normal">Ga</mi><mi mathvariant="normal">N</mi><mo>∕</mo><mtext>sapphire</mtext></mrow></math> heterostructures

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Mechanisms of the refractive index change in femtosecond laser-irradiated ${Au}^{3 +}$ -doped silicate glasses

Quan-Zhong Zhao; Jian-Rong Qiu; Xiong-Wei Jiang; Chong-Jun Zhao; Cong-Shan Zhu

J. Appl. Phys. 96, 7122–7125 (2004) https://doi.org/10.1063/1.1812353

Abstract

View articletitled, Mechanisms of the refractive index change in femtosecond laser-irradiated <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Au</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></math>-doped silicate glasses

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The initial, thermal oxidation of zirconium at room temperature

A. Lyapin; L. P. H. Jeurgens; P. C. J. Graat; E. J. Mittemeijer

J. Appl. Phys. 96, 7126–7135 (2004) https://doi.org/10.1063/1.1809773

Abstract

View articletitled, The initial, thermal oxidation of zirconium at room temperature

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Analysis of the GaN-rich side of GaNP using x-ray diffraction

Yuhzoh Tsuda; Hirokazu Mouri; Masahiro Araki; Takayuki Yuasa; Mototaka Taneya

J. Appl. Phys. 96, 7136–7140 (2004) https://doi.org/10.1063/1.1812601

Abstract

View articletitled, Analysis of the GaN-rich side of GaNP using x-ray diffraction

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Interface modification in $Co ∕ Ge$ bilayer using swift heavy ions

T. Som; B. Satpati; P. V. Satyam; D. Kabiraj; Ajay Gupta; N. C. Mishra

J. Appl. Phys. 96, 7141–7146 (2004) https://doi.org/10.1063/1.1812819

Abstract

View articletitled, Interface modification in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><mo>∕</mo><mi mathvariant="normal">Ge</mi></mrow></math> bilayer using swift heavy ions

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Prism coupling technique investigation of elasto-optical properties of thin polymer films

Feridun Ay; Askin Kocabas; Coskun Kocabas; Atilla Aydinli; Sedat Agan

J. Appl. Phys. 96, 7147–7153 (2004) https://doi.org/10.1063/1.1812823

Abstract

View articletitled, Prism coupling technique investigation of elasto-optical properties of thin polymer films

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Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application

Troy Graves-Abe; Florian Pschenitzka; H. Z. Jin; Brent Bollman; J. C. Sturm; R. A. Register

J. Appl. Phys. 96, 7154–7163 (2004) https://doi.org/10.1063/1.1806548

Abstract

View articletitled, Solvent-enhanced dye diffusion in polymer thin films for polymer light-emitting diode application

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Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe

E. M. Larramendi; O. de Melo; M. Hernández Vélez; M. C. Tamargo

J. Appl. Phys. 96, 7164–7167 (2004) https://doi.org/10.1063/1.1813624

Abstract

View articletitled, Adsorption, desorption, and interdiffusion in atomic layer epitaxy of CdTe and CdZnTe

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Infrared absorption from $O H^{-}$ ions adjacent to lithium acceptors in hydrothermally grown ZnO

L. E. Halliburton; Lijun Wang; Lihua Bai; N. Y. Garces; N. C. Giles; M. J. Callahan; Buguo Wang

J. Appl. Phys. 96, 7168–7172 (2004) https://doi.org/10.1063/1.1806531

Abstract

View articletitled, Infrared absorption from <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">O</mi><msup><mi mathvariant="normal">H</mi><mo>−</mo></msup></mrow></math> ions adjacent to lithium acceptors in hydrothermally grown ZnO

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Residual stresses in sputter-deposited copper/330 stainless steel multilayers

X. Zhang; A. Misra

J. Appl. Phys. 96, 7173–7178 (2004) https://doi.org/10.1063/1.1813617

Abstract

View articletitled, Residual stresses in sputter-deposited copper/330 stainless steel multilayers

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Influence of a Si layer intercalated between ${Si}_{0.75} {Ge}_{0.25}$ and Ni on the behavior of the resulting $Ni {Si}_{1 - u} {Ge}_{u}$ film

J. Seger; T. Jarmar; F. Ericson; U. Smith; J. Hållstedt; Z.-B. Zhang; S.-L. Zhang

J. Appl. Phys. 96, 7179–7182 (2004) https://doi.org/10.1063/1.1814168

Abstract

View articletitled, Influence of a Si layer intercalated between <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Si</mi><mn>0.75</mn></msub><msub><mi mathvariant="normal">Ge</mi><mn>0.25</mn></msub></mrow></math> and Ni on the behavior of the resulting <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><msub><mi mathvariant="normal">Si</mi><mrow><mn>1</mn><mo>−</mo><mi>u</mi></mrow></msub><msub><mi mathvariant="normal">Ge</mi><mi>u</mi></msub></mrow></math> film

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High-resolution synchrotron-radiation photoemission characterization for atomically-controlled ${SrTiO}_{3} (001)$ substrate surfaces subjected to various surface treatments

D. Kobayashi; H. Kumigashira; M. Oshima; T. Ohnishi; M. Lippmaa; K. Ono; M. Kawasaki; H. Koinuma

J. Appl. Phys. 96, 7183–7188 (2004) https://doi.org/10.1063/1.1814175

Abstract

View articletitled, High-resolution synchrotron-radiation photoemission characterization for atomically-controlled <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>SrTiO</mi><mn>3</mn></msub><mrow><mo>(</mo><mn>001</mn><mo>)</mo></mrow></mrow></math> substrate surfaces subjected to various surface treatments

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Determination of strain localization in aluminum alloys using laser-induced photoelectron emission

M. Cai; S. C. Langford; L. E. Levine; J. T. Dickinson

J. Appl. Phys. 96, 7189–7194 (2004) https://doi.org/10.1063/1.1814420

Abstract

View articletitled, Determination of strain localization in aluminum alloys using laser-induced photoelectron emission

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Measurement of the state of stress in silicon with micro-Raman spectroscopy

Stephen J. Harris; Ann E. O’Neill; Wen Yang; Peter Gustafson; James Boileau; W. H. Weber; Bhaskar Majumdar; Somnath Ghosh

J. Appl. Phys. 96, 7195–7201 (2004) https://doi.org/10.1063/1.1808244

Abstract

View articletitled, Measurement of the state of stress in silicon with micro-Raman spectroscopy

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X-ray diffraction study on residual stress and preferred orientation in thin titanium films subjected to a high ion flux during deposition

M. Birkholz; C. Genzel; T. Jung

J. Appl. Phys. 96, 7202–7211 (2004) https://doi.org/10.1063/1.1814413

Abstract

View articletitled, X-ray diffraction study on residual stress and preferred orientation in thin titanium films subjected to a high ion flux during deposition

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Spectroscopic properties of ${Tm}^{3 +}$ ions in $Pb O - Pb F_{2} - {Bi}_{2} O_{3} - {Ga}_{2} O_{3}$ glasses for $S$ -band optical amplifications

Hiroki Yamauchi; Ganapathy Senthil Murugan; Yasutake Ohishi

J. Appl. Phys. 96, 7212–7218 (2004) https://doi.org/10.1063/1.1814414

Abstract

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Conjugated polymer∕molten salt blends: The relationship between morphology and electrical aging

F. Habrard; T. Ouisse; O. Stephan; M. Armand; M. Stark; S. Huant; E. Dubard; J. Chevrier

J. Appl. Phys. 96, 7219–7224 (2004) https://doi.org/10.1063/1.1808230

Abstract

View articletitled, Conjugated polymer∕molten salt blends: The relationship between morphology and electrical aging

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Energy dependence of majority carrier defect introduction rates in $p^{+} n$ $GaAs$ photodiodes irradiated with protons

J. H. Warner; G. P. Summers; R. J. Walters; S. R. Messenger

J. Appl. Phys. 96, 7225–7228 (2004) https://doi.org/10.1063/1.1814806

Abstract

View articletitled, Energy dependence of majority carrier defect introduction rates in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msup><mi>p</mi><mo>+</mo></msup><mspace width="0.3em"></mspace><mi>n</mi></mrow></mrow></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">GaAs</mi></mrow></mrow></math> photodiodes irradiated with protons

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Nitrogen surfactant effects in $GaInP$

D. C. Chapman; G. B. Stringfellow; A. Bell; F. A. Ponce; J. W. Lee; T. Y. Seong; S. Shibakawa; A. Sasaki

J. Appl. Phys. 96, 7229–7234 (2004) https://doi.org/10.1063/1.1814808

Abstract

View articletitled, Nitrogen surfactant effects in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">GaInP</mi></mrow></mrow></math>

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Small angle light scattering and clusters of thermal donors in $Si$

A. Kraitchinskii; M. Kras’ko; V. Neimash; L. Shpinar; V. Tishchenko; V. Voitovich; A. O. Goushcha; R. A. Metzler

J. Appl. Phys. 96, 7235–7238 (2004) https://doi.org/10.1063/1.1814809

Abstract

View articletitled, Small angle light scattering and clusters of thermal donors in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math>

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Evaluation of the small-cone variable axis method in the holographic analysis of Kikuchi electron-diffraction data

G. S. Glander

J. Appl. Phys. 96, 7239–7245 (2004) https://doi.org/10.1063/1.1815385

Abstract

View articletitled, Evaluation of the small-cone variable axis method in the holographic analysis of Kikuchi electron-diffraction data

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Electromigration-induced void grain-boundary interactions: The mean time to failure for copper interconnects with bamboo and near-bamboo structures

Tarik Omer Ogurtani; Ersin Emre Oren

J. Appl. Phys. 96, 7246–7253 (2004) https://doi.org/10.1063/1.1815389

Abstract

View articletitled, Electromigration-induced void grain-boundary interactions: The mean time to failure for copper interconnects with bamboo and near-bamboo structures

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Pressure-sensitive dissipation in elastomers and its implications for the detonation of plastic explosives

Wolfgang G. Knauss; Sairam Sundaram

J. Appl. Phys. 96, 7254–7266 (2004) https://doi.org/10.1063/1.1818349

Abstract

View articletitled, Pressure-sensitive dissipation in elastomers and its implications for the detonation of plastic explosives

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Photoluminescence of $Zn {Se}_{x} {Te}_{1 - x} ∕ Zn Te$ multiple-quantum-well structures grown by molecular-beam epitaxy

Y. T. Shih; Y. L. Tsai; C. T. Yuan; C. Y. Chen; C. S. Yang; W. C. Chou

J. Appl. Phys. 96, 7267–7271 (2004) https://doi.org/10.1063/1.1818712

Abstract

View articletitled, Photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Zn</mi><msub><mi mathvariant="normal">Se</mi><mi>x</mi></msub><msub><mi mathvariant="normal">Te</mi><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><mo>∕</mo><mi mathvariant="normal">Zn</mi><mi mathvariant="normal">Te</mi></mrow></math> multiple-quantum-well structures grown by molecular-beam epitaxy

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Resistivity and phonon softening in ion-irradiated epitaxial gold films

G. Kästle; T. Müller; H.-G. Boyen; A. Klimmer; P. Ziemann

J. Appl. Phys. 96, 7272–7277 (2004) https://doi.org/10.1063/1.1818713

Abstract

View articletitled, Resistivity and phonon softening in ion-irradiated epitaxial gold films

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Interface intermixing and in-plane grain size in aluminum transition-metal bilayers

J. D. R. Buchanan; T. P. A. Hase; B. K. Tanner; C. J. Powell; W. F. Egelhoff, Jr.

J. Appl. Phys. 96, 7278–7282 (2004) https://doi.org/10.1063/1.1818715

Abstract

View articletitled, Interface intermixing and in-plane grain size in aluminum transition-metal bilayers

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Back contact and reach-through diode effects in thin-film photovoltaics

Y. Roussillon; V. G. Karpov; Diana Shvydka; J. Drayton; A. D. Compaan

J. Appl. Phys. 96, 7283–7288 (2004) https://doi.org/10.1063/1.1808902

Abstract

View articletitled, Back contact and reach-through diode effects in thin-film photovoltaics

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Transport in tunneling recombination junctions: A combined computer simulation study

M. Vukadinović; F. Smole; M. Topič; R. E. I. Schropp; F. A. Rubinelli

J. Appl. Phys. 96, 7289–7299 (2004) https://doi.org/10.1063/1.1811375

Abstract

View articletitled, Transport in tunneling recombination junctions: A combined computer simulation study

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Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films

T. Teraji; S. Yoshizaki; S. Mitani; T. Watanabe; T. Ito

J. Appl. Phys. 96, 7300–7305 (2004) https://doi.org/10.1063/1.1805723

Abstract

View articletitled, Transport properties of electron-beam and photo excited carriers in high-quality single-crystalline chemical-vapor-deposition diamond films

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Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

Nicola Pinto; Marco Ficcadenti; Lorenzo Morresi; Roberto Murri; Giuseppina Ambrosone; Ubaldo Coscia

J. Appl. Phys. 96, 7306–7311 (2004) https://doi.org/10.1063/1.1812818

Abstract

View articletitled, Electrical transport properties of microcrystalline silicon grown by plasma enhanced chemical vapor deposition

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Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature

Paul V. Pesavento; Reid J. Chesterfield; Christopher R. Newman; C. Daniel Frisbie

J. Appl. Phys. 96, 7312–7324 (2004) https://doi.org/10.1063/1.1806533

Abstract

View articletitled, Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature

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Ohmic contacts to $p$ -type ${Al}_{0.45} {Ga}_{0.55} N$

B. A. Hull; S. E. Mohney; U. Chowdhury; R. D. Dupuis

J. Appl. Phys. 96, 7325–7331 (2004) https://doi.org/10.1063/1.1814169

Abstract

View articletitled, Ohmic contacts to <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Al</mi><mn>0.45</mn></msub><msub><mi mathvariant="normal">Ga</mi><mn>0.55</mn></msub><mi mathvariant="normal">N</mi></mrow></math>

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Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

D. C. Oh; T. Takai; T. Hanada; M. W. Cho; T. Yao; J. S. Song; J. H. Chang; F. Lu

J. Appl. Phys. 96, 7332–7337 (2004) https://doi.org/10.1063/1.1814170

Abstract

View articletitled, Deep-level-transient spectroscopy of heavily Al-doped ZnSe layers grown by molecular-beam epitaxy

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Unusual thermoelectric behavior of packed crystalline granular metals

M. Ausloos; M. Pȩkala; J. Latuch; J. Mucha; Ph. Vanderbemden; B. Vertruyen; R. Cloots

J. Appl. Phys. 96, 7338–7345 (2004) https://doi.org/10.1063/1.1808248

Abstract

View articletitled, Unusual thermoelectric behavior of packed crystalline granular metals

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Determination of densities and energy levels of donors in free-standing undoped $3 C - SiC$ epilayers with thicknesses of $80 μ m$

Hideharu Matsuura; Hiroyuki Nagasawa; Kuniaki Yagi; Takamitsu Kawahara

J. Appl. Phys. 96, 7346–7351 (2004) https://doi.org/10.1063/1.1814805

Abstract

View articletitled, Determination of densities and energy levels of donors in free-standing undoped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>3</mn><mi mathvariant="normal">C</mi><mo>–</mo><mi mathvariant="normal">SiC</mi></mrow></mrow></math> epilayers with thicknesses of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mn>80</mn><mspace width="0.3em"></mspace><mi>μ</mi><mi mathvariant="normal">m</mi></mrow></mrow></math>

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Electrostatic cross-talk between quantum dot and quantum point contact charge read-out in few-electron quantum dot circuits

L.-X. Zhang; J. P. Leburton

J. Appl. Phys. 96, 7352–7356 (2004) https://doi.org/10.1063/1.1814811

Abstract

View articletitled, Electrostatic cross-talk between quantum dot and quantum point contact charge read-out in few-electron quantum dot circuits

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Metastable boron active concentrations in $Si$ using flash assisted solid phase epitaxy

S. H. Jain; P. B. Griffin; J. D. Plummer; S. Mccoy; J. Gelpey; T. Selinger; D. F. Downey

J. Appl. Phys. 96, 7357–7360 (2004) https://doi.org/10.1063/1.1814792

Abstract

View articletitled, Metastable boron active concentrations in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Si</mi></mrow></mrow></math> using flash assisted solid phase epitaxy

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Contact electrification of high-K oxides studied by electrostatic force microscopy

J. Lambert; M. Saint-Jean; C. Guthmann

J. Appl. Phys. 96, 7361–7369 (2004) https://doi.org/10.1063/1.1815386

Abstract

View articletitled, Contact electrification of high-K oxides studied by electrostatic force microscopy

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Exchange-enhanced $g ‐$ factors in an ${Al}_{0.25} {Ga}_{0.75} N ∕ GaN$ two-dimensional electron system

K. S. Cho; Tsai-Yu Huang; Chao-Ping Huang; Yi-Hsing Chiu; C.-T. Liang; Y. F. Chen; Ikai Lo

J. Appl. Phys. 96, 7370–7373 (2004) https://doi.org/10.1063/1.1815390

Abstract

View articletitled, Exchange-enhanced <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">g</mi><mo xmlns="">‐</mo></math>factors in an <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi>Al</mi><mn>0.25</mn></msub><msub><mi>Ga</mi><mn>0.75</mn></msub><mi mathvariant="normal">N</mi><mo>∕</mo><mi>GaN</mi></mrow></math> two-dimensional electron system

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Analytical $k ∙ p$ method: Anisotropic optical matrix elements in $(11 N)$ -oriented quantum wells

Chun-Nan Chen

J. Appl. Phys. 96, 7374–7378 (2004) https://doi.org/10.1063/1.1818352

Abstract

View articletitled, Analytical <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="bold">k</mi><mo>∙</mo><mi mathvariant="bold">p</mi></mrow></math> method: Anisotropic optical matrix elements in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mo>(</mo><mn>11</mn><mi>N</mi><mo>)</mo></mrow></math>-oriented quantum wells

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The Meyer-Neldel rule for diodes in forward bias

Ralf Widenhorn; Michael Fitzgibbons; Erik Bodegom

J. Appl. Phys. 96, 7379–7382 (2004) https://doi.org/10.1063/1.1818353

Abstract

View articletitled, The Meyer-Neldel rule for diodes in forward bias

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Structural, electrical transport, magnetization, and $1 ∕ f$ noise studies in $200 MeV$ Ag ion irradiated ${La}_{0.7} {Ce}_{0.3} Mn O_{3}$ thin films

Ravi Kumar; R. J. Choudhary; S. I. Patil; Shahid Husain; J. P. Srivastava; S. P. Sanyal; S. E. Lofland

J. Appl. Phys. 96, 7383–7387 (2004) https://doi.org/10.1063/1.1818719

Abstract

View articletitled, Structural, electrical transport, magnetization, and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>1</mn><mo>∕</mo><mi>f</mi></mrow></math> noise studies in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>200</mn><mspace width="0.3em"></mspace><mi>MeV</mi></mrow></math> Ag ion irradiated <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">La</mi><mn>0.7</mn></msub><msub><mi mathvariant="normal">Ce</mi><mn>0.3</mn></msub><mi mathvariant="normal">Mn</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> thin films

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Thermal activation of As implanted in bulk $Si$ and separation by implanted oxygen

M. Dalponte; H. Boudinov; L. V. Goncharova; D. Starodub; E. Garfunkel; T. Gustafsson

J. Appl. Phys. 96, 7388–7391 (2004) https://doi.org/10.1063/1.1776319

Abstract

View articletitled, Thermal activation of As implanted in bulk <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi></mrow></math> and separation by implanted oxygen

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Magnetic and transport properties of $Ag ∕ {Co}_{90} {Fe}_{10}$ granular multilayers

J. Milano; A. M. LLois; L. B. Steren; A. Butera; J. Barnard

J. Appl. Phys. 96, 7392–7398 (2004) https://doi.org/10.1063/1.1810638

Abstract

View articletitled, Magnetic and transport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ag</mi><mo>∕</mo><msub><mi mathvariant="normal">Co</mi><mn>90</mn></msub><msub><mi mathvariant="normal">Fe</mi><mn>10</mn></msub></mrow></math> granular multilayers

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Relation between exchange coupling and enhanced coercivity in the free layer of a patterned magnetic tunnel junction

CheolGi Kim; Chong-Oh Kim; Masakiyo Tsunoda; Migaku Takahashi; Tomasz Stobiecki

J. Appl. Phys. 96, 7399–7402 (2004) https://doi.org/10.1063/1.1811776

Abstract

View articletitled, Relation between exchange coupling and enhanced coercivity in the free layer of a patterned magnetic tunnel junction

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Columnar tilt and vortex stress in superconducting thin films of $Nd {Ba}_{2} {Cu}_{3} O_{7 - δ}$ ⁠: Magnetization critical current-density measurements

Sanghamitra Khatua; P. K. Mishra; Ravi Kumar; D. C. Kundaliya; D. Buddhikot; R. Pinto; S. K. Malik

J. Appl. Phys. 96, 7403–7406 (2004) https://doi.org/10.1063/1.1812351

Abstract

View articletitled, Columnar tilt and vortex stress in superconducting thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Nd</mi><msub><mi mathvariant="normal">Ba</mi><mn>2</mn></msub><msub><mi mathvariant="normal">Cu</mi><mn>3</mn></msub><msub><mi mathvariant="normal">O</mi><mrow><mn>7</mn><mo>−</mo><mi>δ</mi></mrow></msub></mrow></math>⁠: Magnetization critical current-density measurements

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Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dots

T. Gurung; S. Mackowski; H. E. Jackson; L. M. Smith; W. Heiss; J. Kossut; G. Karczewski

J. Appl. Phys. 96, 7407–7413 (2004) https://doi.org/10.1063/1.1813622

Abstract

View articletitled, Optical studies of zero-field magnetization of CdMnTe quantum dots: Influence of average size and composition of quantum dots

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Soft x-ray resonant magneto-optical Kerr effect as a depth-sensitive probe of magnetic heterogeneity: Its application to resolve helical spin structures using linear $p$ polarization

Ki-Suk Lee; Sang-Koog Kim; J. B. Kortright

J. Appl. Phys. 96, 7414–7419 (2004) https://doi.org/10.1063/1.1806535

Abstract

View articletitled, Soft x-ray resonant magneto-optical Kerr effect as a depth-sensitive probe of magnetic heterogeneity: Its application to resolve helical spin structures using linear <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math> polarization

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Magnetic patterning using ion irradiation for highly ordered CoPt alloys with perpendicular anisotropy

M. Abes; J. Venuat; D. Muller; A. Carvalho; G. Schmerber; E. Beaurepaire; A. Dinia; V. Pierron-Bohnes

J. Appl. Phys. 96, 7420–7423 (2004) https://doi.org/10.1063/1.1807522

Abstract

View articletitled, Magnetic patterning using ion irradiation for highly ordered CoPt alloys with perpendicular anisotropy

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Effect of electrical bias on spin transport across a magnetic domain wall

M. Deutsch; G. Vignale; M. E. Flatté

J. Appl. Phys. 96, 7424–7427 (2004) https://doi.org/10.1063/1.1815044

Abstract

View articletitled, Effect of electrical bias on spin transport across a magnetic domain wall

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Exchange bias in $Ni Fe ∕ Fe Mn ∕ Ni Fe$ trilayers

V. K. Sankaranarayanan; S. M. Yoon; D. Y. Kim; C. O. Kim; C. G. Kim

J. Appl. Phys. 96, 7428–7434 (2004) https://doi.org/10.1063/1.1815048

Abstract

View articletitled, Exchange bias in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ni</mi><mi mathvariant="normal">Fe</mi><mo>∕</mo><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">Mn</mi><mo>∕</mo><mi mathvariant="normal">Ni</mi><mi mathvariant="normal">Fe</mi></mrow></math> trilayers

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Tungsten bronze type dielectrics in $SrO - {Sm}_{2} O_{3} - {TiO}_{2} - {Nb}_{2} O_{5}$ system and their dielectric anomaly

Y. H. Sun; X. M. Chen; X. H. Zheng

J. Appl. Phys. 96, 7435–7439 (2004) https://doi.org/10.1063/1.1804246

Abstract

View articletitled, Tungsten bronze type dielectrics in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">SrO</mi><mo>-</mo><msub><mrow><mi mathvariant="normal">Sm</mi></mrow><mn>2</mn></msub><msub><mrow><mi mathvariant="normal">O</mi></mrow><mn>3</mn></msub><mtext>-</mtext><msub><mrow><mi mathvariant="normal">TiO</mi></mrow><mn>2</mn></msub><mtext>-</mtext><msub><mrow><mi mathvariant="normal">Nb</mi></mrow><mn>2</mn></msub><msub><mi mathvariant="normal">O</mi><mn>5</mn></msub></mrow></math> system and their dielectric anomaly

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High-frequency electron paramagnetic resonance investigation of the ${Fe}^{3 +}$ impurity center in polycrystalline $Pb Ti O_{3}$ in its ferroelectric phase

Hrvoje Meštrić; Rüdiger-A. Eichel; K.-P. Dinse; Andrew Ozarowski; Johan van Tol; Louis Claude Brunel

J. Appl. Phys. 96, 7440–7444 (2004) https://doi.org/10.1063/1.1808477

Abstract

View articletitled, High-frequency electron paramagnetic resonance investigation of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>3</mn><mo>+</mo></mrow></msup></math> impurity center in polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Pb</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> in its ferroelectric phase

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Second-harmonic generation of green light in periodically poled stoichiometric $Li Ta O_{3}$ doped with MgO

Ariel Bruner; David Eger; Shlomo Ruschin

J. Appl. Phys. 96, 7445–7449 (2004) https://doi.org/10.1063/1.1804616

Abstract

View articletitled, Second-harmonic generation of green light in periodically poled stoichiometric <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Li</mi><mi mathvariant="normal">Ta</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math> doped with MgO

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Dielectric properties of $Pb ({Zn}_{1 ∕ 3} {Ta}_{2 ∕ 3}) O_{3}$ -modified $Pb ({Mg}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} - Pb Ti O_{3}$ perovskite ceramics

Jee-Su Kim; Nam-Kyoung Kim

J. Appl. Phys. 96, 7450–7454 (2004) https://doi.org/10.1063/1.1811376

Abstract

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Photorefractive properties of undoped lithium tantalate crystals for various composition

F. Holtmann; J. Imbrock; Ch. Bäumer; H. Hesse; E. Krätzig; D. Kip

J. Appl. Phys. 96, 7455–7459 (2004) https://doi.org/10.1063/1.1805189

Abstract

View articletitled, Photorefractive properties of undoped lithium tantalate crystals for various composition

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Effect of the surface adsorbed water on the studying of ferroelectrics by scanning nonlinear dielectric microscopy

Koya Ohara; Yasuo Cho

J. Appl. Phys. 96, 7460–7463 (2004) https://doi.org/10.1063/1.1810194

Abstract

View articletitled, Effect of the surface adsorbed water on the studying of ferroelectrics by scanning nonlinear dielectric microscopy

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A positron lifetime study of lanthanum and niobium doped $Pb ({Zr}_{0.6} {Ti}_{0.4}) O_{3}$

S. Gottschalk; H. Hahn; A. G. Balogh; W. Puff; H. Kungl; M. J. Hoffmann

J. Appl. Phys. 96, 7464–7470 (2004) https://doi.org/10.1063/1.1810198

Abstract

View articletitled, A positron lifetime study of lanthanum and niobium doped <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><mi mathvariant="normal">Pb</mi><mrow><mo>(</mo><mrow><msub><mrow><mi mathvariant="normal">Zr</mi></mrow><mrow><mn>0.6</mn></mrow></msub><msub><mrow><mi mathvariant="normal">Ti</mi></mrow><mrow><mn>0.4</mn></mrow></msub></mrow><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></mrow></math>

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Physical mechanism for orientation dependence of ferroelectric fatigue in $Pb ({Zn}_{1 ∕ 3} {Nb}_{2 ∕ 3}) O_{3} ‐ 5 % {PbTiO}_{3}$ crystals

Jung-Kun Lee; Jae Yun Yi; Kug-Sun Hong

J. Appl. Phys. 96, 7471–7475 (2004) https://doi.org/10.1063/1.1812815

Abstract

View articletitled, Physical mechanism for orientation dependence of ferroelectric fatigue in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>Pb</mi><mrow><mo>(</mo><msub><mi>Zn</mi><mrow><mn>1</mn><mo>∕</mo><mn>3</mn></mrow></msub><msub><mi>Nb</mi><mrow><mn>2</mn><mo>∕</mo><mn>3</mn></mrow></msub><mo>)</mo></mrow><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub><mtext>‐</mtext><mn>5</mn><mo>%</mo><mspace width="0.3em"></mspace><msub><mi>PbTiO</mi><mn>3</mn></msub></mrow></math> crystals

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Electroactive fluorinate-based polymers: Ferroelectric and dielectric properties

Zhi Yu; Chen Ang

J. Appl. Phys. 96, 7476–7484 (2004) https://doi.org/10.1063/1.1810199

Abstract

View articletitled, Electroactive fluorinate-based polymers: Ferroelectric and dielectric properties

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Band alignment issues related to $Hf O_{2} ∕ Si O_{2} ∕ p - Si$ gate stacks

S. Sayan; T. Emge; E. Garfunkel; Xinyuan Zhao; L. Wielunski; R. A. Bartynski; David Vanderbilt; J. S. Suehle; S. Suzer; M. Banaszak-Holl

J. Appl. Phys. 96, 7485–7491 (2004) https://doi.org/10.1063/1.1803107

Abstract

View articletitled, Band alignment issues related to <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Hf</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub><mo>∕</mo><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi></mrow></math> gate stacks

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Oxygen nonstoichiometry and dielectric evolution of $Ba Ti O_{3}$ ⁠. Part I—improvement of insulation resistance with reoxidation

G. Y. Yang; E. C. Dickey; C. A. Randall; D. E. Barber; P. Pinceloup; M. A. Henderson; R. A. Hill; J. J. Beeson; D. J. Skamser

J. Appl. Phys. 96, 7492–7499 (2004) https://doi.org/10.1063/1.1809267

Abstract

View articletitled, Oxygen nonstoichiometry and dielectric evolution of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>⁠. Part I—improvement of insulation resistance with reoxidation

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Oxygen nonstoichiometry and dielectric evolution of $Ba Ti O_{3}$ ⁠. Part II—insulation resistance degradation under applied dc bias

G. Y. Yang; G. D. Lian; E. C. Dickey; C. A. Randall; D. E. Barber; P. Pinceloup; M. A. Henderson; R. A. Hill; J. J. Beeson; D. J. Skamser

J. Appl. Phys. 96, 7500–7508 (2004) https://doi.org/10.1063/1.1809268

Abstract

View articletitled, Oxygen nonstoichiometry and dielectric evolution of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Ba</mi><mi mathvariant="normal">Ti</mi><msub><mi mathvariant="normal">O</mi><mn>3</mn></msub></mrow></math>⁠. Part II—insulation resistance degradation under applied dc bias

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NANOSCALE SCIENCE AND DESIGN

Correlation of properties with preferred orientation in coagulated and stretch-aligned single-wall carbon nanotubes

Stéphane Badaire; Vincent Pichot; Cécile Zakri; Philippe Poulin; Pascale Launois; Juraj Vavro; Csaba Guthy; Michelle Chen; John E. Fischer

J. Appl. Phys. 96, 7509–7513 (2004) https://doi.org/10.1063/1.1810640

Abstract

View articletitled, Correlation of properties with preferred orientation in coagulated and stretch-aligned single-wall carbon nanotubes

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Mössbauer transmission and back scattered conversion electron study of Fe nanowires encapsulated in multiwalled carbon nanotubes

T. Ruskov; S. Asenov; I. Spirov; C. Garcia; I. Mönch; A. Graff; R. Kozhuharova; A. Leonhardt; T. Mühl; M. Ritschel; C. M. Schneider; S. Groudeva-Zotova

J. Appl. Phys. 96, 7514–7518 (2004) https://doi.org/10.1063/1.1811781

Abstract

View articletitled, Mössbauer transmission and back scattered conversion electron study of Fe nanowires encapsulated in multiwalled carbon nanotubes

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Long-range absorption enhancement in organic tandem thin-film solar cells containing silver nanoclusters

Barry P. Rand; Peter Peumans; Stephen R. Forrest

J. Appl. Phys. 96, 7519–7526 (2004) https://doi.org/10.1063/1.1812589

Abstract

View articletitled, Long-range absorption enhancement in organic tandem thin-film solar cells containing silver nanoclusters

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Magnetization reversal of $Cr O_{2}$ nanomagnet arrays

Qiang Zhang; Y. Li; A. V. Nurmikko; G. X. Miao; G. Xiao; A. Gupta

J. Appl. Phys. 96, 7527–7531 (2004) https://doi.org/10.1063/1.1812816

Abstract

View articletitled, Magnetization reversal of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Cr</mi><msub><mi mathvariant="normal">O</mi><mn>2</mn></msub></mrow></math> nanomagnet arrays

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Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

Sukti Hazra; Isao Sakata; Mitsuyuki Yamanaka; Eiichi Suzuki

J. Appl. Phys. 96, 7532–7536 (2004) https://doi.org/10.1063/1.1814172

Abstract

View articletitled, Control on the formation of Si nanodots fabricated by thermal annealing/oxidation of hydrogenated amorphous silicon

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Nanohole-array size dependence of soft x-ray generation enhancement from femtosecond-laser-produced plasma

Tadashi Nishikawa; Hidetoshi Nakano; Katsuya Oguri; Naoshi Uesugi; Kazuyuki Nishio; Hideki Masuda

J. Appl. Phys. 96, 7537–7543 (2004) https://doi.org/10.1063/1.1814176

Abstract

View articletitled, Nanohole-array size dependence of soft x-ray generation enhancement from femtosecond-laser-produced plasma

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Impurity free vacancy disordering of $InGaAs$ quantum dots

P. Lever; H. H. Tan; C. Jagadish

J. Appl. Phys. 96, 7544–7548 (2004) https://doi.org/10.1063/1.1803948

Abstract

View articletitled, Impurity free vacancy disordering of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">InGaAs</mi></mrow></math> quantum dots

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Nanoscale-SiC doping for enhancing $J_{c}$ and $H_{c 2}$ in superconducting $Mg B_{2}$

S. X. Dou; V. Braccini; S. Soltanian; R. Klie; Y. Zhu; S. Li; X. L. Wang; D. Larbalestier

J. Appl. Phys. 96, 7549–7555 (2004) https://doi.org/10.1063/1.1814415

Abstract

View articletitled, Nanoscale-SiC doping for enhancing <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>J</mi><mi>c</mi></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>H</mi><mrow><mi>c</mi><mn>2</mn></mrow></msub></math> in superconducting <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Mg</mi><msub><mi mathvariant="normal">B</mi><mn>2</mn></msub></mrow></math>

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Vapor-liquid-solid growth of germanium nanostructures on silicon

J. W. Dailey; J. Taraci; T. Clement; David J. Smith; Jeff Drucker; S. T. Picraux

J. Appl. Phys. 96, 7556–7567 (2004) https://doi.org/10.1063/1.1815051

Abstract

View articletitled, Vapor-liquid-solid growth of germanium nanostructures on silicon

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The relation between phase transformation and onset of thermal degradation in nanoscale $Co {Si}_{2}$ -polycrystalline silicon structures

M. J. H. van Dal; D. Jawarani; J. G. M. van Berkum; M. Kaiser; J. A. Kittl; C. Vrancken; M. de Potter; A. Lauwers; K. Maex

J. Appl. Phys. 96, 7568–7573 (2004) https://doi.org/10.1063/1.1815384

Abstract

View articletitled, The relation between phase transformation and onset of thermal degradation in nanoscale <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Co</mi><msub><mi mathvariant="normal">Si</mi><mn>2</mn></msub></mrow></math>-polycrystalline silicon structures

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Ambient air effects on electrical characteristics of GaP nanowire transistors

Donghun Kang; Ju-Hue Ko; Eunju Bae; Jaewoong Hyun; Wanjun Park; Byoung-Kye Kim; Ju-Jin Kim; Cheoljin Lee

J. Appl. Phys. 96, 7574–7577 (2004) https://doi.org/10.1063/1.1818714

Abstract

View articletitled, Ambient air effects on electrical characteristics of GaP nanowire transistors

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DEVICE PHYSICS (PACS 85)

Low dark current and blue enhanced $a - Si : H ∕ a - Si C : H$ heterojunction $n - i - δ_{i} - p$ photodiode for imaging applications

Peyman Servati; Yuri Vygranenko; Arokia Nathan; Scott Morrison; Arun Madan

J. Appl. Phys. 96, 7578–7582 (2004) https://doi.org/10.1063/1.1811385

Abstract

View articletitled, Low dark current and blue enhanced <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mo>:</mo><mi mathvariant="normal">H</mi><mo>∕</mo><mi>a</mi><mtext>-</mtext><mi mathvariant="normal">Si</mi><mi mathvariant="normal">C</mi><mo>:</mo><mi mathvariant="normal">H</mi></mrow></math> heterojunction <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>n</mi><mtext>-</mtext><mi>i</mi><mtext>-</mtext><msub><mi>δ</mi><mi>i</mi></msub><mtext>-</mtext><mi>p</mi></mrow></math> photodiode for imaging applications

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Chemical image generation with a grid-gate device

D. Filippini; J. Gunnarsson; I. Lundström

J. Appl. Phys. 96, 7583–7590 (2004) https://doi.org/10.1063/1.1811392

Abstract

View articletitled, Chemical image generation with a grid-gate device

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Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique

Felix Palumbo; Adrian N. Faigon; Francesca Campabadal

J. Appl. Phys. 96, 7591–7595 (2004) https://doi.org/10.1063/1.1808903

Abstract

View articletitled, Radiation and injection effects on metal-oxide-semiconductor devices using the gate-controlled-diode technique

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Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

P. J. McNally; J. Kanatharana; B. H. W. Toh; D. W. McNeill; A. N. Danilewsky; T. Tuomi; L. Knuuttila; J. Riikonen; J. Toivonen; R. Simon

J. Appl. Phys. 96, 7596–7602 (2004) https://doi.org/10.1063/1.1811780

Abstract

View articletitled, Geometric linewidth and the impact of thermal processing on the stress regimes induced by electroless copper metallization for Si integrated circuit interconnect technology

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Impact dynamics of micromachined bidirectional electrothermal vibromotors

Wen-Pin Shih; Minfan Pai; Yu-Yun Lin; Chung-Yuen Hui; Norman C. Tien

J. Appl. Phys. 96, 7603–7611 (2004) https://doi.org/10.1063/1.1805725

Abstract

View articletitled, Impact dynamics of micromachined bidirectional electrothermal vibromotors

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Derivation of the switch-on parameters in the dual channel double heterostructure optoelectronic switch

G. W. Taylor; H. Opper; J. Cai; B. Garber; R. Basilica

J. Appl. Phys. 96, 7612–7624 (2004) https://doi.org/10.1063/1.1812821

Abstract

View articletitled, Derivation of the switch-on parameters in the dual channel double heterostructure optoelectronic switch

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Plasma oscillations in a slot diode structure with a two-dimensional electron channel

V. Ryzhii; A. Satou; I. Khmyrova; A. Chaplik; M. S. Shur

J. Appl. Phys. 96, 7625–7628 (2004) https://doi.org/10.1063/1.1803931

Abstract

View articletitled, Plasma oscillations in a slot diode structure with a two-dimensional electron channel

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Enhanced light extraction efficiency from organic light emitting diodes by insertion of a two-dimensional photonic crystal structure

Young Rag Do; Yoon-Chang Kim; Young-Woo Song; Yong-Hee Lee

J. Appl. Phys. 96, 7629–7636 (2004) https://doi.org/10.1063/1.1815049

Abstract

View articletitled, Enhanced light extraction efficiency from organic light emitting diodes by insertion of a two-dimensional photonic crystal structure

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Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous $silicon ∕ p - c Si$ structures

M. Theodoropoulou; P. K. Karahaliou; C. A. Krontiras; S. N. Georga; N. Xanthopoulos; M. N. Pisanias; C. Tsamis; A. G. Nassiopoulou

J. Appl. Phys. 96, 7637–7642 (2004) https://doi.org/10.1063/1.1815388

Abstract

View articletitled, Transient and ac electrical transport under forward and reverse bias conditions in aluminum/porous <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mtext>silicon</mtext><mo>∕</mo><mi>p</mi><mtext>-</mtext><mi mathvariant="normal">c</mi><mi mathvariant="normal">Si</mi></mrow></math> structures

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Trap-assisted hole injection and quantum efficiency enhancement in poly(⁠ $9, 9^{'}$ dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

Alexander J. A. B. Seeley; Richard H. Friend; Ji-Seon Kim; Jeremy H. Burroughes

J. Appl. Phys. 96, 7643–7649 (2004) https://doi.org/10.1063/1.1818350

Abstract

View articletitled, Trap-assisted hole injection and quantum efficiency enhancement in poly(⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>9</mn><mo>,</mo><msup><mn>9</mn><mo>′</mo></msup></mrow></math> dioctylfluorene-alt-benzothiadiazole) polymer light-emitting diodes

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APPLIED BIOPHYSICS (PACS 87)

Impedance magnetocardiography: Experiments and modeling

J. R. Claycomb; V. Vajrala; D. Nawarathna; J. H. Miller, Jr.

J. Appl. Phys. 96, 7650–7654 (2004) https://doi.org/10.1063/1.1818716

Abstract

View articletitled, Impedance magnetocardiography: Experiments and modeling

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Design of wide-gap fluoride heterostructures for deep ultraviolet optical devices

Riadh El Ouenzerfi; Shingo Ono; Alex Quema; Masahiro Goto; Masahiro Sakai; Nobuhiko Sarukura; Takeshi Nishimatsu; Noriaki Terakubo; Hiroshi Mizuseki; Yoshiyuki Kawazoe; Hiroki Sato; Dirk Ehrentraut; Akira Yoshikawa; Tsuguo Fukuda

J. Appl. Phys. 96, 7655–7659 (2004) https://doi.org/10.1063/1.1808474

Abstract

View articletitled, Design of wide-gap fluoride heterostructures for deep ultraviolet optical devices

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Production of higher silanes in radio frequency $Si H_{4}$ and $H_{2} - Si H_{4}$ plasmas

P. Horvath; K. Rozsa; A. Gallagher

J. Appl. Phys. 96, 7660–7664 (2004) https://doi.org/10.1063/1.1786666

Abstract

View articletitled, Production of higher silanes in radio frequency <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">H</mi><mn>4</mn></msub></mrow></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">H</mi><mn>2</mn></msub><mtext>-</mtext><mi mathvariant="normal">Si</mi><msub><mi mathvariant="normal">H</mi><mn>4</mn></msub></mrow></math> plasmas

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Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

Yu. B. Bolkhovityanov; A. S. Deryabin; A. K. Gutakovskii; M. A. Revenko; L. V. Sokolov

J. Appl. Phys. 96, 7665–7674 (2004) https://doi.org/10.1063/1.1809772

Abstract

View articletitled, Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

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Thermal effect on the oxides on Nb(100) studied by synchrotron-radiation x-ray photoelectron spectroscopy

Qing Ma; P. Ryan; J. W. Freeland; R. A. Rosenberg

J. Appl. Phys. 96, 7675–7680 (2004) https://doi.org/10.1063/1.1809774

Abstract

View articletitled, Thermal effect on the oxides on Nb(100) studied by synchrotron-radiation x-ray photoelectron spectroscopy

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Comparison between radical- and energetic ion-induced growth of ${SiC}_{x} N_{y}$ films in plasma immersion ion implantation and deposition

I. V. Afanasyev-Charkin; M. Nastasi

J. Appl. Phys. 96, 7681–7685 (2004) https://doi.org/10.1063/1.1812587

Abstract

View articletitled, Comparison between radical- and energetic ion-induced growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mrow><msub><mrow><mi mathvariant="normal">SiC</mi></mrow><mi>x</mi></msub><msub><mi mathvariant="normal">N</mi><mi>y</mi></msub></mrow></mrow></math> films in plasma immersion ion implantation and deposition

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Island growth as a growth mode in atomic layer deposition: A phenomenological model

Riikka L. Puurunen; Wilfried Vandervorst

J. Appl. Phys. 96, 7686–7695 (2004) https://doi.org/10.1063/1.1810193

Abstract

View articletitled, Island growth as a growth mode in atomic layer deposition: A phenomenological model

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Constitutive model for polymethyl methacrylate at high pressure

Ralph Menikoff

J. Appl. Phys. 96, 7696–7704 (2004) https://doi.org/10.1063/1.1812820

Abstract

View articletitled, Constitutive model for polymethyl methacrylate at high pressure

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Characterization of high temperature deposited Ti-containing hydrogenated carbon thin films

B. Shi; W. J. Meng; R. D. Evans

J. Appl. Phys. 96, 7705–7713 (2004) https://doi.org/10.1063/1.1812825

Abstract

View articletitled, Characterization of high temperature deposited Ti-containing hydrogenated carbon thin films

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Emission of an intense large area electron beam from a slab of porous dielectric

M. Friedman; M. Myers; F. Hegeler; S. B. Swanekamp; M. F. Wolford; J. D. Sethian; L. Ludeking

J. Appl. Phys. 96, 7714–7722 (2004) https://doi.org/10.1063/1.1815050

Abstract

View articletitled, Emission of an intense large area electron beam from a slab of porous dielectric

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Synthesis method for amorphous metallic foam

Jan Schroers; Chris Veazey; Marios D. Demetriou; William L. Johnson

J. Appl. Phys. 96, 7723–7730 (2004) https://doi.org/10.1063/1.1818355

Abstract

View articletitled, Synthesis method for amorphous metallic foam

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Simulations of surface acoustic wave devices built on stratified media using a mixed finite element/boundary integral formulation

S. Ballandras; A. Reinhardt; V. Laude; A. Soufyane; S. Camou; W. Daniau; T. Pastureaud; W. Steichen; R. Lardat; M. Solal; P. Ventura

J. Appl. Phys. 96, 7731–7741 (2004) https://doi.org/10.1063/1.1758317

Abstract

View articletitled, Simulations of surface acoustic wave devices built on stratified media using a mixed finite element/boundary integral formulation

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COMMUNICATIONS

Surface hardness increasing of iron alloys by nitrogen-deuterium ion implanting

C. A. Figueroa; F. Alvarez

J. Appl. Phys. 96, 7742–7743 (2004) https://doi.org/10.1063/1.1808887

Abstract

View articletitled, Surface hardness increasing of iron alloys by nitrogen-deuterium ion implanting

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Enhanced charge separation in chlorophyll $a$ solar cell by gold nanoparticles

Saïd Barazzouk; Surat Hotchandani

J. Appl. Phys. 96, 7744–7746 (2004) https://doi.org/10.1063/1.1811775

Abstract

View articletitled, Enhanced charge separation in chlorophyll <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mi>a</mi></mrow></math> solar cell by gold nanoparticles

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Highly disordered intergrowths in ${Sr}_{2} Fe Mo O_{6}$

X. Z. Liao; A. Sharma; M. Wei; J. L. MacManus-Driscoll; W. Branford; L. F. Cohen; Y. Bugoslavsky; Y. T. Zhu; D. E. Peterson; Y. B. Jiang; H. F. Xu

J. Appl. Phys. 96, 7747–7749 (2004) https://doi.org/10.1063/1.1812585

Abstract

View articletitled, Highly disordered intergrowths in <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><msub><mi mathvariant="normal">Sr</mi><mn>2</mn></msub><mi mathvariant="normal">Fe</mi><mi mathvariant="normal">Mo</mi><msub><mi mathvariant="normal">O</mi><mn>6</mn></msub></mrow></math>

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Polarization-selective waveguide bends in a photonic crystal structure with layered square symmetry

David Roundy; Elefterios Lidorikis; J. D. Joannopoulos

J. Appl. Phys. 96, 7750–7752 (2004) https://doi.org/10.1063/1.1815046

Abstract

View articletitled, Polarization-selective waveguide bends in a photonic crystal structure with layered square symmetry

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Dynamic switching in tilted and conventional perpendicular recording media

Kai-Zhong Gao; H. Neal Bertram

J. Appl. Phys. 96, 7753–7755 (2004) https://doi.org/10.1063/1.1815381

Abstract

View articletitled, Dynamic switching in tilted and conventional perpendicular recording media

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$530 - mW$ quasi-white-light generation using all-solid-state laser technique

H. X. Li; Y. X. Fan; P. Xu; S. N. Zhu; P. Lu; Z. D. Gao; H. T. Wang; Y. Y. Zhu; N. B. Ming; J. L. He

J. Appl. Phys. 96, 7756–7758 (2004) https://doi.org/10.1063/1.1818711

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mrow xmlns=""><mn>530</mn><mtext>-</mtext><mi>mW</mi></mrow></math> quasi-white-light generation using all-solid-state laser technique

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ERRATA

Publisher's Note: “Error mechanisms and rates in tunable-barrier single–electron turnstiles and charge–coupled devices” [J. Appl. Phys. 96, 5254 (2004)]

Neil M. Zimmerman; Emmanouel Hourdakis; Yuki Ono; Akira Fujiwara; Yasuo Takahashi

J. Appl. Phys. 96, 7759 (2004) https://doi.org/10.1063/1.1839884

Extract

View articletitled, Publisher's Note: “Error mechanisms and rates in tunable-barrier single–electron turnstiles and charge–coupled devices” [J. Appl. Phys. 96, 5254 (2004)]

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Corrected Article: “Experimental observation of nonspherically-decaying radiation from a rotating superluminal source” [J. Appl. Phys. 96, 4614 (2004)]

A. Ardavan; W. Hayes; J. Singleton; H. Ardavan; J. Fopma; D. Halliday

J. Appl. Phys. 96, 7760–7777 (2004) https://doi.org/10.1063/1.1833393

Abstract

View articletitled, Corrected Article: “Experimental observation of nonspherically-decaying radiation from a rotating superluminal source” [J. Appl. Phys. 96, 4614 (2004)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

APPLIED BIOPHYSICS (PACS 87)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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