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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Neutron transmutation doped far-infrared $p- Ge$ laser

E. W. Nelson; M. V. Dolguikh; A. V. Muravjov; E. S. Flitsiyan; T. W. Du Bosq; R. E. Peale; S. H. Kleckley; C. J. Fredricksen; W. G. Vernetson

J. Appl. Phys. 96, 1–6 (2004) https://doi.org/10.1063/1.1753659

Abstract

View articletitled, Neutron transmutation doped far-infrared <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><mi mathvariant="normal" xmlns="">Ge</mi></math> laser

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Practical and theoretical modal analysis of photonic crystal waveguides

Iwan Märki; Martin Salt; Hans Peter Herzig

J. Appl. Phys. 96, 7–11 (2004) https://doi.org/10.1063/1.1737809

Abstract

View articletitled, Practical and theoretical modal analysis of photonic crystal waveguides

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Optimization of transmission properties of two-dimensional photonic crystal channel waveguide bends through local lattice deformation

Iraklis Ntakis; Pierre Pottier; Richard M. De La Rue

J. Appl. Phys. 96, 12–18 (2004) https://doi.org/10.1063/1.1753084

Abstract

View articletitled, Optimization of transmission properties of two-dimensional photonic crystal channel waveguide bends through local lattice deformation

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Temperature effect on liquid crystal refractive indices

Jun Li; Sebastian Gauza; Shin-Tson Wu

J. Appl. Phys. 96, 19–24 (2004) https://doi.org/10.1063/1.1757034

Abstract

View articletitled, Temperature effect on liquid crystal refractive indices

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Frequency-domain “single-shot” ultrafast transient absorption spectroscopy using chirped laser pulses

Ilya A. Shkrob; Dmitri A. Oulianov; Robert A. Crowell; Stanislas Pommeret

J. Appl. Phys. 96, 25–33 (2004) https://doi.org/10.1063/1.1711178

Abstract

View articletitled, Frequency-domain “single-shot” ultrafast transient absorption spectroscopy using chirped laser pulses

Supplementary Material

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Numerical and experimental investigation on self-terminating and recombination lasers in univalent ions of calcium and strontium

Bai-Liang Pan; Gang Chen; Xing Chen; Zhi-Xin Yao

J. Appl. Phys. 96, 34–39 (2004) https://doi.org/10.1063/1.1759793

Abstract

View articletitled, Numerical and experimental investigation on self-terminating and recombination lasers in univalent ions of calcium and strontium

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Modeling bilayer polymer/fullerene photovoltaic devices

M. Koehler; L. S. Roman; O. Inganäs; M. G. E. da Luz

J. Appl. Phys. 96, 40–43 (2004) https://doi.org/10.1063/1.1759786

Abstract

View articletitled, Modeling bilayer polymer/fullerene photovoltaic devices

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Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

Takeo Kageyama; Tomoyuki Miyamoto; Masataka Ohta; Tetsuya Matsuura; Yasutaka Matsui; Tatsuya Furuhata; Fumio Koyama

J. Appl. Phys. 96, 44–48 (2004) https://doi.org/10.1063/1.1760841

Abstract

View articletitled, Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Plasma generation and plume expansion for a transmission-mode microlaser ablation plasma thruster

Michael Keidar; Iain D. Boyd; James Luke; Claude Phipps

J. Appl. Phys. 96, 49–56 (2004) https://doi.org/10.1063/1.1753658

Abstract

View articletitled, Plasma generation and plume expansion for a transmission-mode microlaser ablation plasma thruster

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Effects of a sheath boundary on electron energy distribution in Ar/He dc magnetron discharges

Sang-Hun Seo; Jung-Hwan In; Hong-Young Chang

J. Appl. Phys. 96, 57–64 (2004) https://doi.org/10.1063/1.1755850

Abstract

View articletitled, Effects of a sheath boundary on electron energy distribution in Ar/He dc magnetron discharges

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Fluorocarbon plasma etching of silicon: Factors controlling etch rate

David Humbird; David B. Graves

J. Appl. Phys. 96, 65–70 (2004) https://doi.org/10.1063/1.1736321

Abstract

View articletitled, Fluorocarbon plasma etching of silicon: Factors controlling etch rate

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A technique for temperature mapping in fluorocarbon plasmas using planar laser-induced fluorescence of CF

Kristen L. Steffens; Mark A. Sobolewski

J. Appl. Phys. 96, 71–81 (2004) https://doi.org/10.1063/1.1757027

Abstract

View articletitled, A technique for temperature mapping in fluorocarbon plasmas using planar laser-induced fluorescence of CF

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Pulsed plasmas as a method to improve uniformity during materials processing

Pramod Subramonium; Mark J. Kushner

J. Appl. Phys. 96, 82–93 (2004) https://doi.org/10.1063/1.1751636

Abstract

View articletitled, Pulsed plasmas as a method to improve uniformity during materials processing

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Electron density and two-channel neutron emission measurements in steady-state spherical inertial-electrostatically confined plasmas, with review of the one-dimensional kinetic model

Chris C. Dobson; Ivana Hrbud

J. Appl. Phys. 96, 94–108 (2004) https://doi.org/10.1063/1.1755854

Abstract

View articletitled, Electron density and two-channel neutron emission measurements in steady-state spherical inertial-electrostatically confined plasmas, with review of the one-dimensional kinetic model

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Theoretical analysis of the synergism in the dielectric strength for ${SF}_{6} / {CF}_{4}$ mixtures

A. V. Larin; N. Meurice; D. N. Trubnikov; D. P. Vercauteren

J. Appl. Phys. 96, 109–117 (2004) https://doi.org/10.1063/1.1751637

Abstract

View articletitled, Theoretical analysis of the synergism in the dielectric strength for <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> mixtures

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Modeling of an induction plasma under transient turbulent flow conditions

R. Ye; T. Ishigaki; M. I. Boulos

J. Appl. Phys. 96, 118–126 (2004) https://doi.org/10.1063/1.1760231

Abstract

View articletitled, Modeling of an induction plasma under transient turbulent flow conditions

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Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

Shigeru Yonemura; Kenichi Nanbu; Naoaki Iwata

J. Appl. Phys. 96, 127–132 (2004) https://doi.org/10.1063/1.1759787

Abstract

View articletitled, Synthesis of sheath voltage drops in asymmetric radio-frequency discharges

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Local surface elastic constants by resonant-ultrasound microscopy

Jiayong Tian; Hirotsugu Ogi; Toyokazu Tada; Masahiko Hirao; Hassel Ledbetter

J. Appl. Phys. 96, 133–137 (2004) https://doi.org/10.1063/1.1755432

Abstract

View articletitled, Local surface elastic constants by resonant-ultrasound microscopy

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Time-resolved nonlinear luminescence of excitonic transitions in GaN

Yoichi Yamada; Yohei Yoshida; Tsunemasa Taguchi; Hideto Miyake; Kazumasa Hiramatsu; Yasushi Iyechika; Takayoshi Maeda

J. Appl. Phys. 96, 138–143 (2004) https://doi.org/10.1063/1.1755853

Abstract

View articletitled, Time-resolved nonlinear luminescence of excitonic transitions in GaN

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Oxygen diffusion in atomic layer deposited ${ZrO}_{2}$ and ${HfO}_{2}$ thin films on Si (100)

S. Ferrari; G. Scarel

J. Appl. Phys. 96, 144–149 (2004) https://doi.org/10.1063/1.1753080

Abstract

View articletitled, Oxygen diffusion in atomic layer deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> thin films on Si (100)

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Carrier relaxation in closely stacked InAs quantum dots

T. Nakaoka; J. Tatebayashi; Y. Arakawa; T. Saito

J. Appl. Phys. 96, 150–154 (2004) https://doi.org/10.1063/1.1755857

Abstract

View articletitled, Carrier relaxation in closely stacked InAs quantum dots

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Reversible crystallization of $a- {Si}_{1−x} {Ge}_{x}$ alloys under the combined effect of light and temperature

P. Martin; A. Torres; J. Jiménez; A. Rodrı́guez; J. Sangrador; T. Rodrı́guez

J. Appl. Phys. 96, 155–163 (2004) https://doi.org/10.1063/1.1755855

Abstract

View articletitled, Reversible crystallization of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">a-</mi><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> alloys under the combined effect of light and temperature

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Electronic stopping cross sections in silicon carbide for low-velocity ions with ${1⩽Z}_{1} ⩽15$

M. S. Janson; M. K. Linnarsson; A. Hallén; B. G. Svensson

J. Appl. Phys. 96, 164–169 (2004) https://doi.org/10.1063/1.1737810

Abstract

View articletitled, Electronic stopping cross sections in silicon carbide for low-velocity ions with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mtext>1⩽Z</mtext><mrow><mn>1</mn></mrow></msub><mtext xmlns="">⩽15</mtext></math>

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Two-coefficient Cauchy model for low birefringence liquid crystals

Jun Li; Shin-Tson Wu

J. Appl. Phys. 96, 170–174 (2004) https://doi.org/10.1063/1.1738526

Abstract

View articletitled, Two-coefficient Cauchy model for low birefringence liquid crystals

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Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

T. S. Jeong; M. S. Han; C. J. Youn; Y. S. Park

J. Appl. Phys. 96, 175–179 (2004) https://doi.org/10.1063/1.1756220

Abstract

View articletitled, Raman scattering and photoluminescence of As ion-implanted ZnO single crystal

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Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

S. Kalliakos; T. Bretagnon; P. Lefebvre; T. Taliercio; B. Gil; N. Grandjean; B. Damilano; A. Dussaigne; J. Massies

J. Appl. Phys. 96, 180–185 (2004) https://doi.org/10.1063/1.1753085

Abstract

View articletitled, Photoluminescence energy and linewidth in GaN/AlN stackings of quantum dot planes

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Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

Bincheng Li; Derrick Shaughnessy; Andreas Mandelis; Jerias Batista; Jose Garcia

J. Appl. Phys. 96, 186–196 (2004) https://doi.org/10.1063/1.1755847

Abstract

View articletitled, Accuracy of photocarrier radiometric measurement of electronic transport properties of ion-implanted silicon wafers

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Quantum confinement contribution to porous silicon photoluminescence spectra

D. W. Cooke; R. E. Muenchausen; B. L. Bennett; L. G. Jacobsohn; M. Nastasi

J. Appl. Phys. 96, 197–203 (2004) https://doi.org/10.1063/1.1756217

Abstract

View articletitled, Quantum confinement contribution to porous silicon photoluminescence spectra

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Temperature dependence of intensity and peak position from photocurrent response in $p- {CdIn}_{2} {Te}_{4}$ crystal

T. S. Jeong; K. J. Hong

J. Appl. Phys. 96, 204–207 (2004) https://doi.org/10.1063/1.1758311

Abstract

View articletitled, Temperature dependence of intensity and peak position from photocurrent response in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-</mi><msub xmlns=""><mi mathvariant="normal">CdIn</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>4</mn></mrow></msub></math> crystal

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Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy

S. C. Ray; H. M. Tsai; C. W. Bao; J. W. Chiou; J. C. Jan; K. P. Krishna Kumar; W. F. Pong; M.-H. Tsai; S. Chattopadhyay; L. C. Chen; S. C. Chien; M. T. Lee; S. T. Lin; K. H. Chen

J. Appl. Phys. 96, 208–211 (2004) https://doi.org/10.1063/1.1759392

Abstract

View articletitled, Electronic and bonding structures of B-C-N thin films investigated by x-ray absorption and photoemission spectroscopy

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Propagation of a shear-horizontal surface acoustic mode in a periodically grooved ${AlN/Al}_{2} O_{3}$ microstructure

J. Xu; J. S. Thakur; F. Zhong; H. Ying; G. W. Auner

J. Appl. Phys. 96, 212–217 (2004) https://doi.org/10.1063/1.1753660

Abstract

View articletitled, Propagation of a shear-horizontal surface acoustic mode in a periodically grooved <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AlN/Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> microstructure

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Molecular reorientation dynamics due to direct current voltage-induced ion redistribution in undoped nematic planar cell

P. Pagliusi; B. Zappone; G. Cipparrone; G. Barbero

J. Appl. Phys. 96, 218–223 (2004) https://doi.org/10.1063/1.1756693

Abstract

View articletitled, Molecular reorientation dynamics due to direct current voltage-induced ion redistribution in undoped nematic planar cell

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Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)

Y. Negoro; K. Katsumoto; T. Kimoto; H. Matsunami

J. Appl. Phys. 96, 224–228 (2004) https://doi.org/10.1063/1.1756213

Abstract

View articletitled, Electronic behaviors of high-dose phosphorus-ion implanted 4H–SiC (0001)

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Dynamic drag of solute atmosphere on moving edge dislocations—Phase-field simulation

S. Y. Hu; J. Choi; Y. L. Li; L. Q. Chen

J. Appl. Phys. 96, 229–236 (2004) https://doi.org/10.1063/1.1755858

Abstract

View articletitled, Dynamic drag of solute atmosphere on moving edge dislocations—Phase-field simulation

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Population dynamics of ${Yb}^{3+},$ ${Er}^{3+}$ co-doped phosphate glass

Jing Zhou; Fred Moshary; Barry M. Gross; Mark F. Arend; Samir A. Ahmed

J. Appl. Phys. 96, 237–241 (2004) https://doi.org/10.1063/1.1753075

Abstract

View articletitled, Population dynamics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mtext>3+</mtext></mrow></msup></math> co-doped phosphate glass

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Damage effects produced in the near-surface region of x-cut ${LiNbO}_{3}$ by low dose, high energy implantation of nitrogen, oxygen, and fluorine ions

G. G. Bentini; M. Bianconi; L. Correra; M. Chiarini; P. Mazzoldi; C. Sada; N. Argiolas; M. Bazzan; R. Guzzi

J. Appl. Phys. 96, 242–247 (2004) https://doi.org/10.1063/1.1756219

Abstract

View articletitled, Damage effects produced in the near-surface region of x-cut <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math> by low dose, high energy implantation of nitrogen, oxygen, and fluorine ions

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Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

Zhenghua An; Ricky K. Y. Fu; Weili Li; Peng Chen; Paul K. Chu; K. F. Li; L. Luo; H. L. Tam; K. W. Cheah; Chenglu Lin

J. Appl. Phys. 96, 248–251 (2004) https://doi.org/10.1063/1.1759784

Abstract

View articletitled, Low-temperature photoluminescence of hydrogen Ion and plasma implanted silicon and porous silicon

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Fabrication of focused poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) copolymer 40–50 MHz ultrasound transducers on curved surfaces

Michelle Robert; Gilbert Molingou; Kevin Snook; Jonathan Cannata; K. Kirk Shung

J. Appl. Phys. 96, 252–256 (2004) https://doi.org/10.1063/1.1760233

Abstract

View articletitled, Fabrication of focused poly(vinylidene fluoride-trifluoroethylene) P(VDF-TrFE) copolymer 40–50 MHz ultrasound transducers on curved surfaces

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Alignment of liquid crystal on a polyimide surface exposed to an Ar ion beam

Jin Seog Gwag; Chul Gyu Jhun; Jae Chang Kim; Tae-Hoon Yoon; Gi-Dong Lee; Seong Jin Cho

J. Appl. Phys. 96, 257–260 (2004) https://doi.org/10.1063/1.1759391

Abstract

View articletitled, Alignment of liquid crystal on a polyimide surface exposed to an Ar ion beam

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Recrystallization, redistribution, and electrical activation of ${strained-silicon/Si}_{0.7} {Ge}_{0.3}$ heterostructures with implanted arsenic

Nobuyuki Sugii; Shigefumi Irieda; Jun Morioka; Taroh Inada

J. Appl. Phys. 96, 261–268 (2004) https://doi.org/10.1063/1.1758318

Abstract

View articletitled, Recrystallization, redistribution, and electrical activation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">strained-silicon/Si</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.3</mtext></mrow></msub></math> heterostructures with implanted arsenic

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Physical model of quantum-well infrared photodetectors

V. D. Jovanović; P. Harrison; Z. Ikonić; D. Indjin

J. Appl. Phys. 96, 269–272 (2004) https://doi.org/10.1063/1.1756691

Abstract

View articletitled, Physical model of quantum-well infrared photodetectors

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Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen

R. D. Evans; J. Bentley; K. L. More; G. L. Doll; J. T. Glass

J. Appl. Phys. 96, 273–279 (2004) https://doi.org/10.1063/1.1760232

Abstract

View articletitled, Radial distribution function analyses of amorphous carbon thin films containing various levels of silicon and hydrogen

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Effects of hydrogen implantation temperature on ion-cut of silicon

J. K. Lee; M. Nastasi; N. David Theodore; A. Smalley; T. L. Alford; J. W. Mayer; M. Cai; S. S. Lau

J. Appl. Phys. 96, 280–288 (2004) https://doi.org/10.1063/1.1755851

Abstract

View articletitled, Effects of hydrogen implantation temperature on ion-cut of silicon

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Influences of biaxial strains on the vibrational and exciton energies in ZnO

Th. Gruber; G. M. Prinz; C. Kirchner; R. Kling; F. Reuss; W. Limmer; A. Waag

J. Appl. Phys. 96, 289–293 (2004) https://doi.org/10.1063/1.1755433

Abstract

View articletitled, Influences of biaxial strains on the vibrational and exciton energies in ZnO

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Mechanism of bending electrostriction in thermoplastic polyurethane

Y. Zhou; Y. W. Wong; F. G. Shin

J. Appl. Phys. 96, 294–299 (2004) https://doi.org/10.1063/1.1760837

Abstract

View articletitled, Mechanism of bending electrostriction in thermoplastic polyurethane

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Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy $N_{2}^{+}$ implantation

D. Skarlatos; E. Kapetanakis; P. Normand; C. Tsamis; M. Perego; S. Ferrari; M. Fanciulli; D. Tsoukalas

J. Appl. Phys. 96, 300–309 (2004) https://doi.org/10.1063/1.1739286

Abstract

View articletitled, Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> implantation

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Dynamical process of switch-off in a supertwisted nematic cell

Fuzi Yang; Youmei Dong; L. Z. Ruan; J. R. Sambles

J. Appl. Phys. 96, 310–315 (2004) https://doi.org/10.1063/1.1757031

Abstract

View articletitled, Dynamical process of switch-off in a supertwisted nematic cell

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Electro-optical response of the ferroelectric relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

Dae-Yong Jeong; Y. K. Wang; M. Huang; Q. M. Zhang; G. J. Kavarnos; F. Bauer

J. Appl. Phys. 96, 316–319 (2004) https://doi.org/10.1063/1.1757032

Abstract

View articletitled, Electro-optical response of the ferroelectric relaxor poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) terpolymer

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Passivation of double-positioning twin boundaries in CdTe

Yanfa Yan; M. M. Al-Jassim; K. M. Jones

J. Appl. Phys. 96, 320–326 (2004) https://doi.org/10.1063/1.1758313

Abstract

View articletitled, Passivation of double-positioning twin boundaries in CdTe

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Gallium adsorption onto $(112̄0)$ gallium nitride surfaces

M. McLaurin; B. Haskell; S. Nakamura; J. S. Speck

J. Appl. Phys. 96, 327–334 (2004) https://doi.org/10.1063/1.1759086

Abstract

View articletitled, Gallium adsorption onto <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(112̄0)</mtext></math> gallium nitride surfaces

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Photoionization cross section of hydrogenic impurities in cylindrical quantum wires: Infinite well model

Heon Ham; C. J. Lee; Harold N. Spector

J. Appl. Phys. 96, 335–339 (2004) https://doi.org/10.1063/1.1759394

Abstract

View articletitled, Photoionization cross section of hydrogenic impurities in cylindrical quantum wires: Infinite well model

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Low-temperature growth of ZnO nanostructure networks

B. P. Zhang; K. Wakatsuki; N. T. Binh; Y. Segawa; N. Usami

J. Appl. Phys. 96, 340–343 (2004) https://doi.org/10.1063/1.1759077

Abstract

View articletitled, Low-temperature growth of ZnO nanostructure networks

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Experimental and numerical research on shock initiation of pentaerythritol tetranitrate by laser driven flyer plates

Gu Zhuowei; Sun Chengwei; Zhao Jianheng; Zhang Ning

J. Appl. Phys. 96, 344–347 (2004) https://doi.org/10.1063/1.1759796

Abstract

View articletitled, Experimental and numerical research on shock initiation of pentaerythritol tetranitrate by laser driven flyer plates

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Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals

William M. Vetter; Michael Dudley

J. Appl. Phys. 96, 348–353 (2004) https://doi.org/10.1063/1.1759082

Abstract

View articletitled, Micropipes and the closure of axial screw dislocation cores in silicon carbide crystals

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Structures and properties of fluorinated amorphous carbon films

K. P. Huang; P. Lin; H. C. Shih

J. Appl. Phys. 96, 354–360 (2004) https://doi.org/10.1063/1.1755849

Abstract

View articletitled, Structures and properties of fluorinated amorphous carbon films

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Investigations of transient phase formation in Ti/Si thin film reaction

O. Chaix-Pluchery; B. Chenevier; I. Matko; J. P. Sénateur; F. La Via

J. Appl. Phys. 96, 361–368 (2004) https://doi.org/10.1063/1.1759395

Abstract

View articletitled, Investigations of transient phase formation in Ti/Si thin film reaction

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Nearest-neighbor distances in strained thin films of random pseudobinary semiconductor alloys: A calculational methodology

F. d’Acapito

J. Appl. Phys. 96, 369–373 (2004) https://doi.org/10.1063/1.1760236

Abstract

View articletitled, Nearest-neighbor distances in strained thin films of random pseudobinary semiconductor alloys: A calculational methodology

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Elastic–plastic wave profiles in cyclotetramethylene tetranitramine crystals

J. J. Dick; D. E. Hooks; R. Menikoff; A. R. Martinez

J. Appl. Phys. 96, 374–379 (2004) https://doi.org/10.1063/1.1757026

Abstract

View articletitled, Elastic–plastic wave profiles in cyclotetramethylene tetranitramine crystals

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Raman spectroscopy of ion irradiated diamond

R. Brunetto; G. A. Baratta; G. Strazzulla

J. Appl. Phys. 96, 380–386 (2004) https://doi.org/10.1063/1.1759080

Abstract

View articletitled, Raman spectroscopy of ion irradiated diamond

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Structural phase transition in indium tungstate

V. Sivasubramanian; T. R. Ravindran; R. Nithya; A. K. Arora

J. Appl. Phys. 96, 387–392 (2004) https://doi.org/10.1063/1.1757659

Abstract

View articletitled, Structural phase transition in indium tungstate

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Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide $p-i-n$ diodes

S. Ha; M. Skowronski; H. Lendenmann

J. Appl. Phys. 96, 393–398 (2004) https://doi.org/10.1063/1.1756218

Abstract

View articletitled, Nucleation sites of recombination-enhanced stacking fault formation in silicon carbide <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-i-n</mi></math> diodes

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Probing composition and interfacial interaction in oxide passivated core-shell iron nanoparticles by combining x-ray absorption and magnetic circular dichroism

K. Fauth; E. Goering; G. Schütz; L. Theil Kuhn

J. Appl. Phys. 96, 399–403 (2004) https://doi.org/10.1063/1.1759792

Abstract

View articletitled, Probing composition and interfacial interaction in oxide passivated core-shell iron nanoparticles by combining x-ray absorption and magnetic circular dichroism

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Behavior of the contacts of quantum Hall effect devices at high currents

Y. M. Meziani; C. Chaubet; S. Bonifacie; A. Raymond; W. Poirier; F. Piquemal

J. Appl. Phys. 96, 404–410 (2004) https://doi.org/10.1063/1.1748853

Abstract

View articletitled, Behavior of the contacts of quantum Hall effect devices at high currents

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Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals

Qiang Li; Alexander Y. Polyakov; Marek Skowronski; Matthew D. Roth; Mark A. Fanton; David W. Snyder

J. Appl. Phys. 96, 411–414 (2004) https://doi.org/10.1063/1.1739290

Abstract

View articletitled, Electrical nonuniformities and their impact on the electron mobility in semi-insulating SiC crystals

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Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

Yoshitaka Nakano; Osamu Fujishima; Tetsu Kachi

J. Appl. Phys. 96, 415–419 (2004) https://doi.org/10.1063/1.1755856

Abstract

View articletitled, Effect of p-type activation ambient on acceptor levels in Mg-doped GaN

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Spin relaxation times of two-dimensional holes from spin sensitive bleaching of intersubband absorption

Petra Schneider; J. Kainz; S. D. Ganichev; S. N. Danilov; U. Rössler; W. Wegscheider; D. Weiss; W. Prettl; V. V. Bel’kov; M. M. Glazov; L. E. Golub; D. Schuh

J. Appl. Phys. 96, 420–424 (2004) https://doi.org/10.1063/1.1753656

Abstract

View articletitled, Spin relaxation times of two-dimensional holes from spin sensitive bleaching of intersubband absorption

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Interface formation of pentacene on ${Al}_{2} O_{3}$

N. J. Watkins; S. Zorba; Yongli Gao

J. Appl. Phys. 96, 425–429 (2004) https://doi.org/10.1063/1.1756211

Abstract

View articletitled, Interface formation of pentacene on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>

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Pure spin current gratings in semiconductors generated by quantum interference

Y. Kerachian; P. Nemec; H. M. van Driel; Arthur L. Smirl

J. Appl. Phys. 96, 430–434 (2004) https://doi.org/10.1063/1.1757033

Abstract

View articletitled, Pure spin current gratings in semiconductors generated by quantum interference

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Strain-enhanced phase separation affecting electro- and magnetotransport in ${La}_{0.67} {Ca}_{0.33} {MnO}_{3}$ films

Yu. A. Boikov; R. Gunnarsson; T. Claeson

J. Appl. Phys. 96, 435–442 (2004) https://doi.org/10.1063/1.1757030

Abstract

View articletitled, Strain-enhanced phase separation affecting electro- and magnetotransport in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.67</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>0.33</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> films

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Electrical properties of a two-dimensionally hexagonal $C_{60}$ photopolymer

J. Onoe; T. Nakayama; M. Aono; T. Hara

J. Appl. Phys. 96, 443–445 (2004) https://doi.org/10.1063/1.1745121

Abstract

View articletitled, Electrical properties of a two-dimensionally hexagonal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math> photopolymer

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Electron transport mechanisms in thin boron-doped diamond films

J. E. Yater; A. Shih; J. E. Butler; P. E. Pehrsson

J. Appl. Phys. 96, 446–453 (2004) https://doi.org/10.1063/1.1760240

Abstract

View articletitled, Electron transport mechanisms in thin boron-doped diamond films

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Effects of ${FeCl}_{3}$ doping on polymer-based thin film transistors

Y. Chen; I. Shih; S. Xiao

J. Appl. Phys. 96, 454–458 (2004) https://doi.org/10.1063/1.1760838

Abstract

View articletitled, Effects of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">FeCl</mi><mrow><mn>3</mn></mrow></msub></math> doping on polymer-based thin film transistors

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Transparent conducting ${Zn}_{1−x} {Mg}_{x} O:(Al,In)$ thin films

D. J. Cohen; K. C. Ruthe; S. A. Barnett

J. Appl. Phys. 96, 459–467 (2004) https://doi.org/10.1063/1.1760239

Abstract

View articletitled, Transparent conducting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">O:(Al,In</mi><mi xmlns="">)</mi></math> thin films

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Weak ferromagnetism in the ferroelectric ${BiFeO}_{3} - {ReFeO}_{3} - {BaTiO}_{3}$ solid solutions $(Re = Dy,La)$

Jeong Seog Kim; Chae Il Cheon; Chang Hee Lee; Pyung Woo Jang

J. Appl. Phys. 96, 468–474 (2004) https://doi.org/10.1063/1.1755430

Abstract

View articletitled, Weak ferromagnetism in the ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BiFeO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">ReFeO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> solid solutions <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Re</mi><mi xmlns="">=</mi><mi mathvariant="normal" xmlns="">Dy,La</mi><mi xmlns="">)</mi></math>

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Microstructure and magnetic properties of FePt and Fe/FePt polycrystalline films with high coercivity

Y. K. Takahashi; T. O. Seki; K. Hono; T. Shima; K. Takanashi

J. Appl. Phys. 96, 475–481 (2004) https://doi.org/10.1063/1.1756688

Abstract

View articletitled, Microstructure and magnetic properties of FePt and Fe/FePt polycrystalline films with high coercivity

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Stoner–Wohlfarth model applied to bicrystal magnetoresistance hysteresis

R. Gunnarsson; M. Hanson; C. Dubourdieu

J. Appl. Phys. 96, 482–485 (2004) https://doi.org/10.1063/1.1753083

Abstract

View articletitled, Stoner–Wohlfarth model applied to bicrystal magnetoresistance hysteresis

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Experimental and theoretical study of demagnetization fields in superconducting samples of orthorhombic shape

C. Navau; C. A. Cardoso; O. F. de Lima; F. M. Araujo-Moreira

J. Appl. Phys. 96, 486–493 (2004) https://doi.org/10.1063/1.1736325

Abstract

View articletitled, Experimental and theoretical study of demagnetization fields in superconducting samples of orthorhombic shape

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Magnetic force microscopy with work function compensation

Jun Yu; Joachim Ahner; Dieter Weller

J. Appl. Phys. 96, 494–497 (2004) https://doi.org/10.1063/1.1757029

Abstract

View articletitled, Magnetic force microscopy with work function compensation

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Spin-polarized transport in diluted GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

Y. C. Tao; J. G. Hu; H. Liu

J. Appl. Phys. 96, 498–502 (2004) https://doi.org/10.1063/1.1756692

Abstract

View articletitled, Spin-polarized transport in diluted GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor tunnel junctions

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Magnetic behavior of $(Al,Ge)_{65} CuMn$ quaternary alloy quasicrystals

Ratnamala Chatterjee; Aloke Kanjilal

J. Appl. Phys. 96, 503–507 (2004) https://doi.org/10.1063/1.1757651

Abstract

View articletitled, Magnetic behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Al,Ge</mi><msub xmlns=""><mi>)</mi><mrow><mn>65</mn></mrow></msub><mi mathvariant="normal" xmlns="">CuMn</mi></math> quaternary alloy quasicrystals

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Magnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition

L. Yan; C. K. Ong; X. S. Rao

J. Appl. Phys. 96, 508–511 (2004) https://doi.org/10.1063/1.1757652

Abstract

View articletitled, Magnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition

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Perpendicular magnetic anisotropy and structural properties of NiCu/Cu multilayers

A. Ruotolo; C. Bell; C. W. Leung; M. G. Blamire

J. Appl. Phys. 96, 512–518 (2004) https://doi.org/10.1063/1.1757658

Abstract

View articletitled, Perpendicular magnetic anisotropy and structural properties of NiCu/Cu multilayers

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Magnetic properties of metallic ferromagnetic nanoparticle composites

R. Ramprasad; P. Zurcher; M. Petras; M. Miller; P. Renaud

J. Appl. Phys. 96, 519–529 (2004) https://doi.org/10.1063/1.1759073

Abstract

View articletitled, Magnetic properties of metallic ferromagnetic nanoparticle composites

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Properties of arsenic antisite defects in ${Ga}_{1−x} {Mn}_{x} As$

A. Wolos; M. Kaminska; M. Palczewska; A. Twardowski; X. Liu; T. Wojtowicz; J. K. Furdyna

J. Appl. Phys. 96, 530–533 (2004) https://doi.org/10.1063/1.1753087

Abstract

View articletitled, Properties of arsenic antisite defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Microwave attenuation properties of W-type barium ferrite ${BaZn}_{2−x} {Co}_{x} {Fe}_{16} O_{27}$ composites

Z. W. Li; Linfeng Chen; Yuping Wu; C. K. Ong

J. Appl. Phys. 96, 534–539 (2004) https://doi.org/10.1063/1.1757660

Abstract

View articletitled, Microwave attenuation properties of W-type barium ferrite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaZn</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>16</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>27</mn></mrow></msub></math> composites

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Epitaxial growth of the Heusler alloy ${Co}_{2} {Cr}_{1−x} {Fe}_{x} Al$

R. Kelekar; B. M. Clemens

J. Appl. Phys. 96, 540–543 (2004) https://doi.org/10.1063/1.1759399

Abstract

View articletitled, Epitaxial growth of the Heusler alloy <math xmlns="http://www.w3.org/1998/Math/MathML"> <msub xmlns=""> <mi mathvariant="normal">Co</mi> <mrow> <mn>2</mn> </mrow> </msub> <msub xmlns=""> <mi mathvariant="normal">Cr</mi> <mrow> <mtext>1−x</mtext> </mrow> </msub> <msub xmlns=""> <mi mathvariant="normal">Fe</mi> <mrow> <mi>x</mi> </mrow> </msub> <mi mathvariant="normal" xmlns="">Al</mi> </math>

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Aging of piezoelectric properties in ${Pb(MgNb)O}_{3} - {Pb(ZrTi)O}_{3}$ multilayer ceramic actuators

Jung-Hyuk Koh; Soon-Jong Jeong; Mun-Su Ha; Jae-Sung Song

J. Appl. Phys. 96, 544–548 (2004) https://doi.org/10.1063/1.1755437

Abstract

View articletitled, Aging of piezoelectric properties in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(MgNb)O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">-</mi><msub xmlns=""><mi mathvariant="normal">Pb(ZrTi)O</mi><mrow><mn>3</mn></mrow></msub></math> multilayer ceramic actuators

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Elastic, piezoelectric, and dielectric properties of $0.58 {Pb(Mg}_{1/3} {Nb}_{2/3}) O_{3} -0.42 {PbTiO}_{3}$ single crystal

Hu Cao; V. Hugo Schmidt; Rui Zhang; Wenwu Cao; Haosu Luo

J. Appl. Phys. 96, 549–554 (2004) https://doi.org/10.1063/1.1712020

Abstract

View articletitled, Elastic, piezoelectric, and dielectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0.58</mtext><msub xmlns=""><mi mathvariant="normal">Pb(Mg</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">-0.42</mtext><msub xmlns=""><mi mathvariant="normal">PbTiO</mi><mrow><mn>3</mn></mrow></msub></math> single crystal

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Thickness independence of true phase transition temperatures in barium strontium titanate films

A. Lookman; R. M. Bowman; J. M. Gregg; J. Kut; S. Rios; M. Dawber; A. Ruediger; J. F. Scott

J. Appl. Phys. 96, 555–562 (2004) https://doi.org/10.1063/1.1759084

Abstract

View articletitled, Thickness independence of true phase transition temperatures in barium strontium titanate films

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Modeling and measurement of surface displacements in ${BaTiO}_{3}$ bulk material in piezoresponse force microscopy

F. Felten; G. A. Schneider; J. Muñoz Saldaña; S. V. Kalinin

J. Appl. Phys. 96, 563–568 (2004) https://doi.org/10.1063/1.1758316

Abstract

View articletitled, Modeling and measurement of surface displacements in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub></math> bulk material in piezoresponse force microscopy

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Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films

Yingbang Yao; S. G. Lu; Haydn Chen; Jiwei Zhai; K. H. Wong

J. Appl. Phys. 96, 569–574 (2004) https://doi.org/10.1063/1.1758312

Abstract

View articletitled, Role of oxygen pressure during pulsed laser deposition on the electrical and dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films

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Explicit expressions for the dynamic polarization behavior in ferroelectrics with symmetric/asymmetric electrical conductivity

C. K. Wong; C. H. Tsang; F. G. Shin

J. Appl. Phys. 96, 575–583 (2004) https://doi.org/10.1063/1.1759078

Abstract

View articletitled, Explicit expressions for the dynamic polarization behavior in ferroelectrics with symmetric/asymmetric electrical conductivity

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Structural characteristics of epitaxial ${BaTiO}_{3} / {LaNiO}_{3}$ superlattice

Yuan-Chang Liang; Tai-Bor Wu; Hsin-Yi Lee; Yung-Wei Hsieh

J. Appl. Phys. 96, 584–589 (2004) https://doi.org/10.1063/1.1759074

Abstract

View articletitled, Structural characteristics of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">LaNiO</mi><mrow><mn>3</mn></mrow></msub></math> superlattice

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Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of ${Pb(Zr}_{x} {Ti}_{1−x}) O_{3}$ thin films

Wen Gong; Jing-Feng Li; Xiangcheng Chu; Zhilun Gui; Longtu Li

J. Appl. Phys. 96, 590–595 (2004) https://doi.org/10.1063/1.1759072

Abstract

View articletitled, Combined effect of preferential orientation and Zr/Ti atomic ratio on electrical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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NANOSCALE SCIENCE AND DESIGN

Nano-transistors in the Landauer–Büttiker formalism

G. A. Nemnes; U. Wulf; P. N. Racec

J. Appl. Phys. 96, 596–604 (2004) https://doi.org/10.1063/1.1748858

Abstract

View articletitled, Nano-transistors in the Landauer–Büttiker formalism

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Nanostructuring of silicon (100) using electron beam rapid thermal annealing

S. Johnson; A. Markwitz; M. Rudolphi; H. Baumann

J. Appl. Phys. 96, 605–609 (2004) https://doi.org/10.1063/1.1756695

Abstract

View articletitled, Nanostructuring of silicon (100) using electron beam rapid thermal annealing

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Finite-size effect on magnetic properties in Prussian blue nanowire arrays

P. H. Zhou; D. S. Xue

J. Appl. Phys. 96, 610–614 (2004) https://doi.org/10.1063/1.1737044

Abstract

View articletitled, Finite-size effect on magnetic properties in Prussian blue nanowire arrays

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Electrochemically assembled p-type ${Bi}_{2} {Te}_{3}$ nanowire arrays

Wei Wang; Qinghua Huang; Falong Jia; Jing Zhu

J. Appl. Phys. 96, 615–618 (2004) https://doi.org/10.1063/1.1736322

Abstract

View articletitled, Electrochemically assembled p-type <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>3</mn></mrow></msub></math> nanowire arrays

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Features of self-supporting tungsten nanowire deposited with high-energy electrons

Z. Q. Liu; K. Mitsuishi; K. Furuya

J. Appl. Phys. 96, 619–623 (2004) https://doi.org/10.1063/1.1755434

Abstract

View articletitled, Features of self-supporting tungsten nanowire deposited with high-energy electrons

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Effect of adsorbates on field-electron emission from ZnO nanoneedle arrays

H. Z. Zhang; R. M. Wang; Y. W. Zhu

J. Appl. Phys. 96, 624–628 (2004) https://doi.org/10.1063/1.1757653

Abstract

View articletitled, Effect of adsorbates on field-electron emission from ZnO nanoneedle arrays

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Effects of surface forces and phonon dissipation in a three-terminal nanorelay

L. M. Jonsson; T. Nord; J. M. Kinaret; S. Viefers

J. Appl. Phys. 96, 629–635 (2004) https://doi.org/10.1063/1.1756689

Abstract

View articletitled, Effects of surface forces and phonon dissipation in a three-terminal nanorelay

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Grain-size effect on the deformation mechanisms of nanostructured copper processed by high-pressure torsion

X. Z. Liao; Y. H. Zhao; Y. T. Zhu; R. Z. Valiev; D. V. Gunderov

J. Appl. Phys. 96, 636–640 (2004) https://doi.org/10.1063/1.1757035

Abstract

View articletitled, Grain-size effect on the deformation mechanisms of nanostructured copper processed by high-pressure torsion

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Nanoscale observation of failures in organic light-emitting diodes

R. Czerw; D. L. Carroll; H. S. Woo; Y. B. Kim; J. W. Park

J. Appl. Phys. 96, 641–644 (2004) https://doi.org/10.1063/1.1759398

Abstract

View articletitled, Nanoscale observation of failures in organic light-emitting diodes

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Controlled synthesis of carbon nanoparticles by arc in water method with forced convective jet

Noriaki Sano; Tawatchai Charinpanitkul; Tatsuo Kanki; Wiwut Tanthapanichakoon

J. Appl. Phys. 96, 645–649 (2004) https://doi.org/10.1063/1.1756216

Abstract

View articletitled, Controlled synthesis of carbon nanoparticles by arc in water method with forced convective jet

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Observation of the gap blueshift on ${Gd}_{2} O_{3} : {Eu}^{3+}$ nanoparticles

Bruno Mercier; Christophe Dujardin; Gilles Ledoux; Cédric Louis; Olivier Tillement; Pascal Perriat

J. Appl. Phys. 96, 650–653 (2004) https://doi.org/10.1063/1.1756690

Abstract

View articletitled, Observation of the gap blueshift on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Eu</mi><mrow><mtext>3+</mtext></mrow></msup></math> nanoparticles

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Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

R. Krishnan; Q. Xie; J. Kulik; X. D. Wang; S. Lu; M. Molinari; Y. Gao; T. D. Krauss; P. M. Fauchet

J. Appl. Phys. 96, 654–660 (2004) https://doi.org/10.1063/1.1751632

Abstract

View articletitled, Effect of oxidation on charge localization and transport in a single layer of silicon nanocrystals

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Significance of ${Yb}^{3+}$ concentration on the upconversion mechanisms in codoped $Y_{2} O_{3} : {Er}^{3+},$ ${Yb}^{3+}$ nanocrystals

Fiorenzo Vetrone; John-Christopher Boyer; John A. Capobianco; Adolfo Speghini; Marco Bettinelli

J. Appl. Phys. 96, 661–667 (2004) https://doi.org/10.1063/1.1739523

Abstract

View articletitled, Significance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>3+</mtext></mrow></msup></math> concentration on the upconversion mechanisms in codoped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Er</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>3+</mtext></mrow></msup></math> nanocrystals

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Ripening and annealing effects in InAs/GaAs(001) quantum dot formation

T. J. Krzyzewski; T. S. Jones

J. Appl. Phys. 96, 668–674 (2004) https://doi.org/10.1063/1.1759788

Abstract

View articletitled, Ripening and annealing effects in InAs/GaAs(001) quantum dot formation

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Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders

Leah Bergman; Xiang-Bai Chen; John L. Morrison; Jesse Huso; Andrew P. Purdy

J. Appl. Phys. 96, 675–682 (2004) https://doi.org/10.1063/1.1759076

Abstract

View articletitled, Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders

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Metal-to-nonmetal transition in copper nanoshells grown on copper oxide nanoparticles

K. Chatterjee; B. Satpati; P. V. Satyam; D. Chakravorty

J. Appl. Phys. 96, 683–687 (2004) https://doi.org/10.1063/1.1759075

Abstract

View articletitled, Metal-to-nonmetal transition in copper nanoshells grown on copper oxide nanoparticles

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Effect of La, B doping on the electrical resistivity and magnetic susceptibility of nanocrystalline vanadium nitride

N. Sudhakar; R. S. Ningthoujam; K. P. Rajeev; A. K. Nigam; J. Weissmüller; N. S. Gajbhiye

J. Appl. Phys. 96, 688–695 (2004) https://doi.org/10.1063/1.1759794

Abstract

View articletitled, Effect of La, B doping on the electrical resistivity and magnetic susceptibility of nanocrystalline vanadium nitride

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DEVICE PHYSICS (PACS 85)

Modeling the washboard effect at the head/disk interface

Qing Dai; Ferdi Hendriks; Bruno Marchon

J. Appl. Phys. 96, 696–703 (2004) https://doi.org/10.1063/1.1739527

Abstract

View articletitled, Modeling the washboard effect at the head/disk interface

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Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices

S. H. Son; K. H. Cho; S. W. Hwang; K. M. Kim; Y. J. Park; Y. S. Yu; D. Ahn

J. Appl. Phys. 96, 704–708 (2004) https://doi.org/10.1063/1.1755438

Abstract

View articletitled, Fabrication and characterization of metal-semiconductor field-effect-transistor-type quantum devices

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Al:SiO thin films for organic light-emitting diodes

S. Han; D. Grozea; C. Huang; Z. H. Lu; R. Wood; W. Y. Kim

J. Appl. Phys. 96, 709–714 (2004) https://doi.org/10.1063/1.1751233

Abstract

View articletitled, Al:SiO thin films for organic light-emitting diodes

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Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

Roland Pässler

J. Appl. Phys. 96, 715–722 (2004) https://doi.org/10.1063/1.1753076

Abstract

View articletitled, Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors

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Envelope-function analysis of wurtzite InGaN/GaN quantum well light emitting diodes

D. Xiao; K. W. Kim; J. M. Zavada

J. Appl. Phys. 96, 723–728 (2004) https://doi.org/10.1063/1.1755435

Abstract

View articletitled, Envelope-function analysis of wurtzite InGaN/GaN quantum well light emitting diodes

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Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

Emmanuel Dubois; Guilhem Larrieu

J. Appl. Phys. 96, 729–737 (2004) https://doi.org/10.1063/1.1756215

Abstract

View articletitled, Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors

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Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells

K. A. Mkhoyan; E. J. Kirkland; J. Silcox; E. S. Alldredge

J. Appl. Phys. 96, 738–746 (2004) https://doi.org/10.1063/1.1756222

Abstract

View articletitled, Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells

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Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

Sung-Yong Chung; Niu Jin; Ryan E. Pavlovicz; Paul R. Berger; Ronghua Yu; Zhaoqiang Fang; Phillip E. Thompson

J. Appl. Phys. 96, 747–753 (2004) https://doi.org/10.1063/1.1755436

Abstract

View articletitled, Annealing of defect density and excess currents in Si-based tunnel diodes grown by low-temperature molecular-beam epitaxy

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Exponentially localized magnetic fields for single-spin quantum logic gates

D. A. Lidar; J. H. Thywissen

J. Appl. Phys. 96, 754–758 (2004) https://doi.org/10.1063/1.1753664

Abstract

View articletitled, Exponentially localized magnetic fields for single-spin quantum logic gates

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Electrical properties of superfilled sub-micrometer silver metallizations

D. Josell; C. Burkhard; Y. Li; Y.-W. Cheng; R. R. Keller; C. A. Witt; D. R. Kelley; J. E. Bonevich; B. C. Baker; T. P. Moffat

J. Appl. Phys. 96, 759–768 (2004) https://doi.org/10.1063/1.1757655

Abstract

View articletitled, Electrical properties of superfilled sub-micrometer silver metallizations

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Fabrication and characterization of single-grain organic field-effect transistor of pentacene

Takeo Minari; Takashi Nemoto; Seiji Isoda

J. Appl. Phys. 96, 769–772 (2004) https://doi.org/10.1063/1.1760237

Abstract

View articletitled, Fabrication and characterization of single-grain organic field-effect transistor of pentacene

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Tunable normal incidence Ge quantum dot midinfrared detectors

Song Tong; Fei Liu; A. Khitun; K. L. Wang; J. L. Liu

J. Appl. Phys. 96, 773–776 (2004) https://doi.org/10.1063/1.1759081

Abstract

View articletitled, Tunable normal incidence Ge quantum dot midinfrared detectors

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Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited ${SiN}_{x}$

Z. Jin; W. Prost; S. Neumann; F.-J. Tegude

J. Appl. Phys. 96, 777–783 (2004) https://doi.org/10.1063/1.1757656

Abstract

View articletitled, Comparison of the passivation effects on self- and non-self-aligned InP/InGaAs/InP double heterostructure bipolar transistors by low-temperature deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub></math>

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Solutions of the matched KV envelope equations for a “smooth” asymmetric focusing channel

Martin Reiser; Hui Li

J. Appl. Phys. 96, 784–790 (2004) https://doi.org/10.1063/1.1753078

Abstract

View articletitled, Solutions of the matched KV envelope equations for a “smooth” asymmetric focusing channel

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Atomistic simulations of spontaneous etching of silicon by fluorine and chlorine

David Humbird; David B. Graves

J. Appl. Phys. 96, 791–798 (2004) https://doi.org/10.1063/1.1753657

Abstract

View articletitled, Atomistic simulations of spontaneous etching of silicon by fluorine and chlorine

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Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

D. Gogova; A. Kasic; H. Larsson; C. Hemmingsson; B. Monemar; F. Tuomisto; K. Saarinen; L. Dobos; B. Pécz; P. Gibart; B. Beaumont

J. Appl. Phys. 96, 799–806 (2004) https://doi.org/10.1063/1.1753073

Abstract

View articletitled, Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

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Slow positrons elastically scattered by solid targets

Zine-El-Abidine Chaoui; Nadir Bouarissa

J. Appl. Phys. 96, 807–812 (2004) https://doi.org/10.1063/1.1739289

Abstract

View articletitled, Slow positrons elastically scattered by solid targets

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Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates

David Chi; Chi On Chui; Krishna C. Saraswat; Baylor B. Triplett; Paul C. McIntyre

J. Appl. Phys. 96, 813–819 (2004) https://doi.org/10.1063/1.1745118

Abstract

View articletitled, Zirconia grown by ultraviolet ozone oxidation on germanium (100) substrates

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Ionized physical vapor deposition of titanium nitride: A deposition model

D. Mao; J. Hopwood

J. Appl. Phys. 96, 820–828 (2004) https://doi.org/10.1063/1.1753663

Abstract

View articletitled, Ionized physical vapor deposition of titanium nitride: A deposition model

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Study of oxygen influences on carbon doped silicon oxide low k thin films deposited by plasma enhanced chemical vapor deposition

M. R. Wang; Rusli; J. L. Xie; N. Babu; C. Y. Li; K. Rakesh

J. Appl. Phys. 96, 829–834 (2004) https://doi.org/10.1063/1.1756696

Abstract

View articletitled, Study of oxygen influences on carbon doped silicon oxide low k thin films deposited by plasma enhanced chemical vapor deposition

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Microfluidic transport based on direct electrowetting

Wataru Satoh; Michael Loughran; Hiroaki Suzuki

J. Appl. Phys. 96, 835–841 (2004) https://doi.org/10.1063/1.1739528

Abstract

View articletitled, Microfluidic transport based on direct electrowetting

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Tree network channels as fluid distributors constructing double-staircase polymer electrolyte fuel cells

S. M. Senn; D. Poulikakos

J. Appl. Phys. 96, 842–852 (2004) https://doi.org/10.1063/1.1757028

Abstract

View articletitled, Tree network channels as fluid distributors constructing double-staircase polymer electrolyte fuel cells

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Relaxation processes in the coloration of amorphous ${WO}_{3}$ thin films studied by combined impedance and electro-optical measurements

Germà Garcia-Belmonte; Paulo R. Bueno; Francisco Fabregat-Santiago; Juan Bisquert

J. Appl. Phys. 96, 853–859 (2004) https://doi.org/10.1063/1.1759083

Abstract

View articletitled, Relaxation processes in the coloration of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mn>3</mn></mrow></msub></math> thin films studied by combined impedance and electro-optical measurements

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Dynamic formation of columnar lattices in magnetic fluid thin films subjected to oscillating perpendicular magnetic fields

I. M. Jiang; C. C. Shih; C. K. Lu; D. J. Jang; J. C. Chiang; M. S. Tsai; H. E. Horng

J. Appl. Phys. 96, 860–863 (2004) https://doi.org/10.1063/1.1760241

Abstract

View articletitled, Dynamic formation of columnar lattices in magnetic fluid thin films subjected to oscillating perpendicular magnetic fields

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Resonant microphone based on laser beam deflection

Kevin Roark; Gerald J. Diebold

J. Appl. Phys. 96, 864–866 (2004) https://doi.org/10.1063/1.1759079

Abstract

View articletitled, Resonant microphone based on laser beam deflection

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Quantum-size resonance tunneling in the field emission phenomenon

V. Litovchenko; A. Evtukh; Yu. Kryuchenko; N. Goncharuk; O. Yilmazoglu; K. Mutamba; H. L. Hartnagel; D. Pavlidis

J. Appl. Phys. 96, 867–877 (2004) https://doi.org/10.1063/1.1760234

Abstract

View articletitled, Quantum-size resonance tunneling in the field emission phenomenon

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Growth and physical properties of epitaxial HfN layers on MgO(001)

H.-S. Seo; T.-Y. Lee; J. G. Wen; I. Petrov; J. E. Greene; D. Gall

J. Appl. Phys. 96, 878–884 (2004) https://doi.org/10.1063/1.1759783

Abstract

View articletitled, Growth and physical properties of epitaxial HfN layers on MgO(001)

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Secondary electron emission yield on poled silica based thick films

D. Braga; B. Poumellec; V. Cannas; G. Blaise; Y. Ren; M. Kristensen

J. Appl. Phys. 96, 885–894 (2004) https://doi.org/10.1063/1.1758315

Abstract

View articletitled, Secondary electron emission yield on poled silica based thick films

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High quality heteroepitaxial AlN films on diamond

G. Vogg; C. R. Miskys; J. A. Garrido; M. Hermann; M. Eickhoff; M. Stutzmann

J. Appl. Phys. 96, 895–902 (2004) https://doi.org/10.1063/1.1759088

Abstract

View articletitled, High quality heteroepitaxial AlN films on diamond

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General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

A. Luque; A. Martı́; C. Stanley; N. López; L. Cuadra; D. Zhou; J. L. Pearson; A. McKee

J. Appl. Phys. 96, 903–909 (2004) https://doi.org/10.1063/1.1760836

Abstract

View articletitled, General equivalent circuit for intermediate band devices: Potentials, currents and electroluminescence

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COMMUNICATIONS

Raman spectroscopy of $B_{12} {As}_{2}$ under high pressure

J. W. Pomeroy; M. Kuball; H. Hubel; N. W. A. van Uden; D. J. Dunstan; R. Nagarajan; J. H. Edgar

J. Appl. Phys. 96, 910–912 (2004) https://doi.org/10.1063/1.1753072

Abstract

View articletitled, Raman spectroscopy of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>12</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mn>2</mn></mrow></msub></math> under high pressure

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Dynamic screening effects on the electron-impact excitation in Lorentzian (kappa)-Maxwellian plasmas

Chang-Geun Kim; Young-Dae Jung

J. Appl. Phys. 96, 913–915 (2004) https://doi.org/10.1063/1.1755427

Abstract

View articletitled, Dynamic screening effects on the electron-impact excitation in Lorentzian (kappa)-Maxwellian plasmas

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Ge films grown on Si substrates by molecular-beam epitaxy below 450 °C

J. Liu; H. J. Kim; O. Hul’ko; Y. H. Xie; S. Sahni; P. Bandaru; E. Yablonovitch

J. Appl. Phys. 96, 916–918 (2004) https://doi.org/10.1063/1.1738530

Abstract

View articletitled, Ge films grown on Si substrates by molecular-beam epitaxy below 450 °C

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Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

Lin Shao; John Chen; Jianming Zhang; D. Tang; Sanjay Patel; Jiarui Liu; Xuemei Wang; Wei-Kan Chu

J. Appl. Phys. 96, 919–921 (2004) https://doi.org/10.1063/1.1756685

Abstract

View articletitled, Using point defect engineering to reduce the effects of energy nonmonochromaticity of B ion beams on shallow junction formation

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Rabi oscillations of ultrashort optical pulses in 1.55 μm InGaAs/InGaAsP quantum-well amplifiers

J.-Z. Zhang; I. Galbraith

J. Appl. Phys. 96, 922–924 (2004) https://doi.org/10.1063/1.1756686

Abstract

View articletitled, Rabi oscillations of ultrashort optical pulses in 1.55 μm InGaAs/InGaAsP quantum-well amplifiers

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Influence of platinum loading on photoluminescence of ${TiO}_{2}$ powder

Hiromitsu Nakajima; Toshiyuki Mori; Mamoru Watanabe

J. Appl. Phys. 96, 925–927 (2004) https://doi.org/10.1063/1.1757649

Abstract

View articletitled, Influence of platinum loading on photoluminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub></math> powder

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Bias-dependent carrier and phonon dynamics in semiconductor–metal heterointerfaces

Y.-M. Chang

J. Appl. Phys. 96, 928–930 (2004) https://doi.org/10.1063/1.1756687

Abstract

View articletitled, Bias-dependent carrier and phonon dynamics in semiconductor–metal heterointerfaces

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Thermal conductivity of the thermoelectric layered cobalt oxides measured by the Harman method

A. Satake; H. Tanaka; T. Ohkawa; T. Fujii; I. Terasaki

J. Appl. Phys. 96, 931–933 (2004) https://doi.org/10.1063/1.1753070

Abstract

View articletitled, Thermal conductivity of the thermoelectric layered cobalt oxides measured by the Harman method

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Three-dimensional effects for two-dimensional samples in plasma immersion ion implantation

D. Manova; H. Neumann; S. Mändl; B. Rauschenbach

J. Appl. Phys. 96, 934–936 (2004) https://doi.org/10.1063/1.1760833

Abstract

View articletitled, Three-dimensional effects for two-dimensional samples in plasma immersion ion implantation

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ERRATA

Erratum: “Microstructural evolution and nanocrystal formation in ${Pb}^{+}$ -implanted ${ZrSiO}_{4}$ single crystals” [J. Appl. Phys. 94, 5695 (2003)]

Jie Lian; Susana Rios; Lynn A. Boatner; L. M. Wang; Rodney C. Ewing

J. Appl. Phys. 96, 937 (2004) https://doi.org/10.1063/1.1753069

Abstract

View articletitled, Erratum: “Microstructural evolution and nanocrystal formation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mi>+</mi></mrow></msup></math>-implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrSiO</mi><mrow><mn>4</mn></mrow></msub></math> single crystals” [J. Appl. Phys. 94, 5695 (2003)]

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