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Issues
15 January 2004
ISSN 0021-8979
EISSN 1089-7550
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Characteristics of a stick waveguide resonator in a two-dimensional photonic crystal slab
J. Appl. Phys. 95, 411–416 (2004)
https://doi.org/10.1063/1.1633645
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
Effect of nonequilibrium ionization process on gain of neon-like argon x-ray laser
J. Appl. Phys. 95, 434–437 (2004)
https://doi.org/10.1063/1.1633986
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
Charge transport in highly efficient iridium cored electrophosphorescent dendrimers
J. Appl. Phys. 95, 438–445 (2004)
https://doi.org/10.1063/1.1633336
Heteroepitaxial growth behavior of Mn-doped ZnO thin films on (0001) by pulsed laser deposition
J. Appl. Phys. 95, 454–459 (2004)
https://doi.org/10.1063/1.1632547
Stress, texture, and microstructure in niobium thin films sputter deposited onto amorphous substrates
J. Appl. Phys. 95, 466–476 (2004)
https://doi.org/10.1063/1.1631733
Structural, electrical, and optical analysis of ion implanted semi-insulating InP
J. Appl. Phys. 95, 477–482 (2004)
https://doi.org/10.1063/1.1633349
Evolution of the microstructure during annealing of porous silicon multilayers
J. Appl. Phys. 95, 497–503 (2004)
https://doi.org/10.1063/1.1633657
Laser induced surface modes at water–elastic and poroelastic solid interfaces
J. Appl. Phys. 95, 528–535 (2004)
https://doi.org/10.1063/1.1633646
Growth and electrical properties of atomic-layer deposited -nitride stack gate dielectrics
J. Appl. Phys. 95, 536–542 (2004)
https://doi.org/10.1063/1.1629773
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
Temperature and bias dependence of dynamic conductance—low resistive magnetic tunnel junctions
J. Appl. Phys. 95, 546–550 (2004)
https://doi.org/10.1063/1.1631074
Effects of oxygen related defects on the electrical and thermal behavior of a junction
J. Appl. Phys. 95, 561–570 (2004)
https://doi.org/10.1063/1.1633344
Schottky barrier height and nitrogen–vacancy-related defects in Ti alloyed Ohmic contacts to
J. Appl. Phys. 95, 571–575 (2004)
https://doi.org/10.1063/1.1633658
Electrical contact resistance theory for conductive rough surfaces separated by a thin insulating film
J. Appl. Phys. 95, 576–585 (2004)
https://doi.org/10.1063/1.1629392
Mechanism for the increase of indium-tin-oxide work function by inductively coupled plasma treatment
J. Appl. Phys. 95, 586–590 (2004)
https://doi.org/10.1063/1.1633351
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Characterization of ferromagnetic layers grown on sapphire (0001) substrates
J. Appl. Phys. 95, 591–596 (2004)
https://doi.org/10.1063/1.1633340
Magneto-optical properties of Fe/Cr/Fe/MgO/Fe structures epitaxially grown on GaAs(001)
J. Appl. Phys. 95, 597–602 (2004)
https://doi.org/10.1063/1.1632016
Effect of Mn interstitials on the lattice parameter of
I. Kuryliszyn-Kudelska; J. Z. Domagała; T. Wojtowicz; X. Liu; E. Łusakowska; W. Dobrowolski; J. K. Furdyna
J. Appl. Phys. 95, 603–608 (2004)
https://doi.org/10.1063/1.1634390
Magnetic and electronic structures of FePtCu ternary ordered alloy
J. Appl. Phys. 95, 609–612 (2004)
https://doi.org/10.1063/1.1635978
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Structural and electrical properties of electron beam gun evaporated insulator thin films
J. Appl. Phys. 95, 613–620 (2004)
https://doi.org/10.1063/1.1633342
Dielectric response of graded spherical particles of anisotropic materials
J. Appl. Phys. 95, 621–624 (2004)
https://doi.org/10.1063/1.1633648
Effect of grain size on electric resistivity and thermopower of thin films
J. Appl. Phys. 95, 625–628 (2004)
https://doi.org/10.1063/1.1631732
NANOSCALE SCIENCE AND DESIGN
Formation and charging effect of Si nanocrystals in structures
J. Appl. Phys. 95, 640–645 (2004)
https://doi.org/10.1063/1.1633649
CdS quantum dots in hybrid sol–gel matrix; absorption and room-temperature photoluminescence
J. Appl. Phys. 95, 646–648 (2004)
https://doi.org/10.1063/1.1633651
Single wall carbon nanotube fibers extruded from super-acid suspensions: Preferred orientation, electrical, and thermal transport
W. Zhou; J. Vavro; C. Guthy; K. I. Winey; J. E. Fischer; L. M. Ericson; S. Ramesh; R. Saini; V. A. Davis; C. Kittrell; M. Pasquali; R. H. Hauge; R. E. Smalley
J. Appl. Phys. 95, 649–655 (2004)
https://doi.org/10.1063/1.1627457
Nanostructural zinc oxide and its electrical and optical properties
J. Appl. Phys. 95, 661–666 (2004)
https://doi.org/10.1063/1.1632549
Upconversion luminescence of and in codoped nanoparticles
J. Appl. Phys. 95, 667–672 (2004)
https://doi.org/10.1063/1.1633345
Theoretical study of electrical transport in a fullerene-doped semiconducting carbon nanotubes
J. Appl. Phys. 95, 694–697 (2004)
https://doi.org/10.1063/1.1634368
DEVICE PHYSICS (PACS 85)
Spherical deformation of compliant substrates with semiconductor device islands
J. Appl. Phys. 95, 705–712 (2004)
https://doi.org/10.1063/1.1634370
Simulation of hole phonon-velocity in strained Si/SiGe metal-oxide-semiconductor transistor
J. Appl. Phys. 95, 713–717 (2004)
https://doi.org/10.1063/1.1633346
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Backscattering of low energy electrons from carbon films deposited on aluminum: A Monte Carlo simulation
J. Appl. Phys. 95, 718–721 (2004)
https://doi.org/10.1063/1.1633655
The effects of nitrogen plasma on reactive-ion etching induced damage in GaN
J. Appl. Phys. 95, 727–730 (2004)
https://doi.org/10.1063/1.1632552
COMMUNICATIONS
Optical and magnetic measurements of -implanted AlN
J. Appl. Phys. 95, 755–757 (2004)
https://doi.org/10.1063/1.1633981
Monte Carlo simulation of nanocrystalline TiN/amorphous composite films
J. Appl. Phys. 95, 758–760 (2004)
https://doi.org/10.1063/1.1633650
Ferromagnetic behavior of -type GaN epilayer implanted with ions
Yoon Shon; Young Hae Kwon; Y. S. Park; Sh. U. Yuldashev; Seung Joo Lee; C. S. Park; K. J. Chung; S. J. Yoon; H. J. Kim; W. C. Lee; D. J. Fu; T. W. Kang; X. J. Fan; Y. J. Park; H. T. Oh
J. Appl. Phys. 95, 761–763 (2004)
https://doi.org/10.1063/1.1630364
Patterned magnetic tunnel junctions with Al conduction layers: Fabrication and reduction of pinhole effect
J. Appl. Phys. 95, 764–766 (2004)
https://doi.org/10.1063/1.1629780
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.