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APPLIED PHYSICS REVIEWS - FOCUSED REVIEW

Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

Dieter K. Schroder; Jeff A. Babcock

J. Appl. Phys. 94, 1–18 (2003) https://doi.org/10.1063/1.1567461

Abstract

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Filamentation instability in a semiconductor laser

Amrita; A. K. Sharma

J. Appl. Phys. 94, 19–22 (2003) https://doi.org/10.1063/1.1580198

Abstract

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Photorefractive liquid crystal-polymer dispersion with different morphology

Hiroshi Ono; Hirohito Shimokawa; Akira Emoto; Nobuhiro Kawatsuki

J. Appl. Phys. 94, 23–30 (2003) https://doi.org/10.1063/1.1582235

Abstract

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Simulation of amplified spontaneous emission in high gain KrF laser amplifiers

R. H. Lehmberg; J. L. Giuliani

J. Appl. Phys. 94, 31–43 (2003) https://doi.org/10.1063/1.1580192

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Electron beam generation in a diode with a gaseous plasma electron source I: Plasma source based on a hollow anode ignited by a multi-arc system

A. Krokhmal; J. Z. Gleizer; Ya. E. Krasik; J. Felsteiner; V. I. Gushenets

J. Appl. Phys. 94, 44–54 (2003) https://doi.org/10.1063/1.1577228

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Electron beam generation in a diode with a gaseous plasma electron source II: Plasma source based on a hollow anode ignited by a hollow-cathode source

A. Krokhmal; J. Z. Gleizer; Ya. E. Krasik; J. Felsteiner; V. I. Gushenets

J. Appl. Phys. 94, 55–61 (2003) https://doi.org/10.1063/1.1577229

Abstract

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Inhomogeneous model of an Ar–Hg direct current column discharge

G. M. Petrov; J. L. Giuliani

J. Appl. Phys. 94, 62–75 (2003) https://doi.org/10.1063/1.1576895

Abstract

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Radical dynamics in unstable ${CF}_{4}$ inductive discharges

P. Chabert; H. Abada; J.-P. Booth; M. A. Lieberman

J. Appl. Phys. 94, 76–84 (2003) https://doi.org/10.1063/1.1578175

Abstract

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Two-dimensional self-consistent microwave argon plasma simulations with experimental verification

Y. Li; M. H. Gordon; L. A. Roe; K. Hassouni; T. Grotjohn

J. Appl. Phys. 94, 85–95 (2003) https://doi.org/10.1063/1.1577810

Abstract

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Ion swarm data for electrical discharge modeling in air and flue gas mixtures

D. Nelson; M. Benhenni; O. Eichwald; M. Yousfi

J. Appl. Phys. 94, 96–103 (2003) https://doi.org/10.1063/1.1582232

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Modeling of dust in a silane/hydrogen plasma

M. R. Akdim; W. J. Goedheer

J. Appl. Phys. 94, 104–109 (2003) https://doi.org/10.1063/1.1578522

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Analysis procedure for calculation of electron energy distribution functions from incoherent Thomson scattering spectra

E. Costa i Bricha; W. G. Graham; T. Morrow; P. G. Steen; C. E. Thompson

J. Appl. Phys. 94, 110–114 (2003) https://doi.org/10.1063/1.1579547

Abstract

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Operational mechanism of light-emitting devices based on Ru(II) complexes: Evidence for electrochemical junction formation

Hartmut Rudmann; Satoru Shimada; Michael F. Rubner

J. Appl. Phys. 94, 115–122 (2003) https://doi.org/10.1063/1.1578174

Abstract

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Surface-plasmon photonic band gaps in dielectric gratings on a flat metal surface

Jaewoong Yoon; Gwansu Lee; Seok Ho Song; Cha-Hwan Oh; Pill-Soo Kim

J. Appl. Phys. 94, 123–129 (2003) https://doi.org/10.1063/1.1577396

Abstract

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Athermal annealing of Si-implanted GaAs and InP

Mulpuri V. Rao; J. Brookshire; S. Mitra; Syed B. Qadri; R. Fischer; J. Grun; N. Papanicolaou; M. Yousuf; M. C. Ridgway

J. Appl. Phys. 94, 130–135 (2003) https://doi.org/10.1063/1.1576896

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Strain gradients along the growth direction in thin diamond film deposited on silicon wafer

D. Roy; Z. H. Barber; T. W. Clyne

J. Appl. Phys. 94, 136–139 (2003) https://doi.org/10.1063/1.1573347

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Effects of grain boundary on impurity gettering and oxygen precipitation in polycrystalline sheet silicon

Jinggang Lu; Magnus Wagener; George Rozgonyi; James Rand; Ralf Jonczyk

J. Appl. Phys. 94, 140–144 (2003) https://doi.org/10.1063/1.1578699

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Internal elemental microanalysis combining x-ray fluorescence, Compton and transmission tomography

Bruno Golosio; Alexandre Simionovici; Andrea Somogyi; Laurence Lemelle; Marina Chukalina; Antonio Brunetti

J. Appl. Phys. 94, 145–156 (2003) https://doi.org/10.1063/1.1578176

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Effects of substrate temperature and annealing temperature on the formation and properties of erbium silicide layers synthesized by high current Er ion implantation

X. W. Zhang; S. P. Wong; W. Y. Cheung

J. Appl. Phys. 94, 157–162 (2003) https://doi.org/10.1063/1.1573346

Abstract

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Atomistic Monte Carlo simulations of three-dimensional polycrystalline thin films

J. Emiliano Rubio; Martin Jaraiz; Ignacio Martin-Bragado; Jesus M. Hernandez-Mangas; Juan Barbolla; George H. Gilmer

J. Appl. Phys. 94, 163–168 (2003) https://doi.org/10.1063/1.1577814

Abstract

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Experimental study of a chemical reaction between LiF and Al

S. D. Wang; M. K. Fung; S. L. Lai; S. W. Tong; C. S. Lee; S. T. Lee; H. J. Zhang; S. N. Bao

J. Appl. Phys. 94, 169–173 (2003) https://doi.org/10.1063/1.1576893

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Effect of composition on vacancy mediated diffusion in random binary alloys: First principles study of the ${Si}_{1−x} {Ge}_{x}$ system

Panchapakesan Ramanarayanan; Kyeongjae Cho; Bruce M. Clemens

J. Appl. Phys. 94, 174–185 (2003) https://doi.org/10.1063/1.1578695

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Intrinsic stresses and mechanical properties of Ti-containing hydrocarbon coatings

Bo Shi; W. J. Meng

J. Appl. Phys. 94, 186–194 (2003) https://doi.org/10.1063/1.1578523

Abstract

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Infrared spectroscopic ellipsometry study of vinylidene fluoride (70%)-trifluoroethylene (30%) copolymer Langmuir–Blodgett films

Mengjun Bai; Matt Poulsen; A. V. Sorokin; Stephen Ducharme; C. M. Herzinger; V. M. Fridkin

J. Appl. Phys. 94, 195–200 (2003) https://doi.org/10.1063/1.1578697

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Influence of nonstoichiometry on long-range order and its measurement in $(GaAs)_{1−x} {Ge}_{2x}$ and related alloys

H. Holloway

J. Appl. Phys. 94, 201–206 (2003) https://doi.org/10.1063/1.1579131

Abstract

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Optical and structural properties of β $- {FeSi}_{2}$ precipitate layers in silicon

B. Schuller; R. Carius; S. Mantl

J. Appl. Phys. 94, 207–211 (2003) https://doi.org/10.1063/1.1576902

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Phase selective synthesis of gadolinium silicide films on Si(111) using an interfacial SiO₂ layer

K. B. Chung; Y. K. Choi; M. H. Jang; M. Noh; C. N. Whang

J. Appl. Phys. 94, 212–215 (2003) https://doi.org/10.1063/1.1581342

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Modeling of optical charging spectroscopy investigation of trapping phenomena in nanocrystalline porous silicon

Vladimir Iancu; Magdalena Lidia Ciurea; Mihai Draghici

J. Appl. Phys. 94, 216–223 (2003) https://doi.org/10.1063/1.1576301

Abstract

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Laue transmission diffraction optics for thin film stress calculation

B. L. French; J. C. Bilello

J. Appl. Phys. 94, 224–230 (2003) https://doi.org/10.1063/1.1580191

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High-resolution investigation of atomic interdiffusion during Co/Ni/Si phase transition

A. Alberti; C. Bongiorno; F. La Via; C. Spinella

J. Appl. Phys. 94, 231–237 (2003) https://doi.org/10.1063/1.1579552

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The influence of impurities on the growth of helium-induced cavities in silicon

V. M. Vishnyakov; S. E. Donnelly; G. Carter

J. Appl. Phys. 94, 238–244 (2003) https://doi.org/10.1063/1.1576493

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Interfacial reactions of $Ti /n- GaN$ contacts at elevated temperature

C. J. Lu; A. V. Davydov; D. Josell; L. A. Bendersky

J. Appl. Phys. 94, 245–253 (2003) https://doi.org/10.1063/1.1579128

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White luminescence from ${Si}^{+}$ and $C^{+}$ ion-implanted ${SiO}_{2}$ films

A. Pérez-Rodrı́guez; O. González-Varona; B. Garrido; P. Pellegrino; J. R. Morante; C. Bonafos; M. Carrada; A. Claverie

J. Appl. Phys. 94, 254–262 (2003) https://doi.org/10.1063/1.1578172

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Microstructure of thin tantalum films sputtered onto inclined substrates: Experiments and atomistic simulations

J. Dalla Torre; G. H. Gilmer; D. L. Windt; R. Kalyanaraman; F. H. Baumann; P. L. O’Sullivan; J. Sapjeta; T. Dı́az de la Rubia; M. Djafari Rouhani

J. Appl. Phys. 94, 263–271 (2003) https://doi.org/10.1063/1.1579112

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Shock compression of a free-electron gas

W. J. Nellis

J. Appl. Phys. 94, 272–275 (2003) https://doi.org/10.1063/1.1579135

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Photoelectromagnetic effects on electron and proton irradiated ${CuInSe}_{2}$ thin films

Hae-Seok Lee; Hiroshi Okada; Akihiro Wakahara; Akira Yoshida; Takeshi Ohshima; Hisayoshi Itoh

J. Appl. Phys. 94, 276–278 (2003) https://doi.org/10.1063/1.1579545

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How doping a cholesteric liquid crystal with polymeric dye improves an order parameter and makes possible low threshold lasing

Fumito Araoka; Ki-Chul Shin; Yoichi Takanishi; Ken Ishikawa; Hideo Takezoe; Zhengguo Zhu; Timothy M. Swager

J. Appl. Phys. 94, 279–283 (2003) https://doi.org/10.1063/1.1578534

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${sp}^{3} {/sp}^{2}$ ratio in amorphous-carbon thin film by spectroscopic ellipsometry

W. J. Li; Z. R. Song; Y. H. Yu; X. Wang; S. C. Zou; D. S. Shen

J. Appl. Phys. 94, 284–287 (2003) https://doi.org/10.1063/1.1576304

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Methodology for the evaluation of yield strength and hardening behavior of metallic materials by indentation with spherical tip

Dejun Ma; Chung Wo Ong; Jian Lu; Jiawen He

J. Appl. Phys. 94, 288–294 (2003) https://doi.org/10.1063/1.1579862

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Comparison of acoustic properties between natural and synthetic α-quartz crystals

Jun-ichi Kushibiki; Masanori Ohtagawa; Izumi Takanaga

J. Appl. Phys. 94, 295–300 (2003) https://doi.org/10.1063/1.1576891

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Thermally stimulated luminescence from vapor-transport-equilibrated ${LiTaO}_{3}$ crystals

M. M. Chirila; N. Y. Garces; L. E. Halliburton; D. R. Evans; R. K. Route; M. M. Fejer

J. Appl. Phys. 94, 301–306 (2003) https://doi.org/10.1063/1.1580643

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Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

S. Shokhovets; R. Goldhahn; G. Gobsch; S. Piekh; R. Lantier; A. Rizzi; V. Lebedev; W. Richter

J. Appl. Phys. 94, 307–312 (2003) https://doi.org/10.1063/1.1582369

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Facets, indium distribution, and lattice distortion of InGaAs/GaAs quantum dots observed by three-dimensional scanning transmission electron microscope

Kazunari Ozasa; Yoshinobu Aoyagi; Masaya Iwaki; Hiroki Kurata

J. Appl. Phys. 94, 313–317 (2003) https://doi.org/10.1063/1.1572976

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Electrical and structural characteristics of yttrium oxide films deposited by rf-magnetron sputtering on $n- Si$

E. K. Evangelou; C. Wiemer; M. Fanciulli; M. Sethu; W. Cranton

J. Appl. Phys. 94, 318–325 (2003) https://doi.org/10.1063/1.1580644

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Swift heavy ion induced modification of $C_{60}$ thin films

Navdeep Bajwa; K. Dharamvir; V. K. Jindal; Alka Ingale; D. K. Avasthi; Ravi Kumar; A. Tripathi

J. Appl. Phys. 94, 326–333 (2003) https://doi.org/10.1063/1.1581381

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Spatial and temperature dependence of the spectroscopic profile of a magnetic atom adsorbed on a metal surface—Co/Cu(111)

Yuki Shimada; Hideaki Kasai; Hiroshi Nakanishi; Wilson Agerico Diño; Ayao Okiji; Yukio Hasegawa

J. Appl. Phys. 94, 334–341 (2003) https://doi.org/10.1063/1.1572543

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Electric-field-induced anisotropy of excitonic optical properties in semiconductor quantum dots

H. Gotoh; H. Kamada; T. Saitoh; H. Ando; J. Temmyo

J. Appl. Phys. 94, 342–347 (2003) https://doi.org/10.1063/1.1578524

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Schottky barrier height and interfacial state density on oxide-GaAs interface

J. S. Hwang; C. C. Chang; M. F. Chen; C. C. Chen; K. I. Lin; F. C. Tang; M. Hong; J. Kwo

J. Appl. Phys. 94, 348–353 (2003) https://doi.org/10.1063/1.1578528

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Photoluminescence study of ZnO films prepared by thermal oxidation of Zn metallic films in air

Y. G. Wang; S. P. Lau; H. W. Lee; S. F. Yu; B. K. Tay; X. H. Zhang; H. H. Hng

J. Appl. Phys. 94, 354–358 (2003) https://doi.org/10.1063/1.1577819

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Controlled $p$ doping of the hole-transport molecular material $N,N ′- diphenyl - N,N ′- bis (1- naphthyl)-1,1′- biphenyl -4,4′- diamine$ with tetrafluorotetracyanoquinodimethane

Weiying Gao; Antoine Kahn

J. Appl. Phys. 94, 359–366 (2003) https://doi.org/10.1063/1.1577400

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Study of excitonic ground state energies in coupled three-quantum dot systems for far-infrared laser applications

Z. Y. Lai; W. Z. Shen

J. Appl. Phys. 94, 367–374 (2003) https://doi.org/10.1063/1.1577408

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Comparative full-band Monte Carlo study of Si and Ge with screened pseudopotential-based phonon scattering rates

Phuong Hoa Nguyen; Karl R. Hofmann; Gernot Paasch

J. Appl. Phys. 94, 375–386 (2003) https://doi.org/10.1063/1.1579860

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Characterization of low-frequency noise in molecular beam epitaxy-grown GaN epilayers deposited on double buffer layers

W. K. Fong; S. W. Ng; B. H. Leung; Charles Surya

J. Appl. Phys. 94, 387–391 (2003) https://doi.org/10.1063/1.1579843

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Scattering of electrons in silicon inversion layers by remote surface roughness

F. Gámiz; J. B. Roldán

J. Appl. Phys. 94, 392–399 (2003) https://doi.org/10.1063/1.1577227

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Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; K. Ip; M. E. Overberg; Y. W. Heo; D. P. Norton; S. J. Pearton; B. Luo; F. Ren; J. M. Zavada

J. Appl. Phys. 94, 400–406 (2003) https://doi.org/10.1063/1.1579114

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Effects of piezoelectricity and spontaneous polarization on localized excitons in self-formed InGaN quantum dots

Jun-jie Shi; Zi-zhao Gan

J. Appl. Phys. 94, 407–415 (2003) https://doi.org/10.1063/1.1576490

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Modulation of charge transport in diamond-based layers

A. Serra; D. Manno; T. Siciliano; G. Micocci; A. Tepore; M. Rossi; M. L. Terranova; V. Sessa; S. Piccirillo; S. Orlanducci

J. Appl. Phys. 94, 416–422 (2003) https://doi.org/10.1063/1.1579542

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Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN

Louis Tirino; Michael Weber; Kevin F. Brennan; Enrico Bellotti; Michele Goano

J. Appl. Phys. 94, 423–430 (2003) https://doi.org/10.1063/1.1579129

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Effects of Mg accumulation on chemical and electronic properties of Mg-doped p-type GaN surface

Tamotsu Hashizume

J. Appl. Phys. 94, 431–436 (2003) https://doi.org/10.1063/1.1580195

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Effects of confined longitudinal optical phonons on the exciton binding energy in a cubic quantum dot

B. El Amrani; M. Fliyou; L. Bensaid; T. Lamcharfi; K. Rahmani; M. Bouayad

J. Appl. Phys. 94, 437–442 (2003) https://doi.org/10.1063/1.1580190

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Low temperature nanoscopic kinetics of hydrogen plasma-enhanced crystallization of $a- Si:H$ films

Yu. L. Khait; R. Weil; R. Beserman; F. Edelman; W. Beyer; B. Rech

J. Appl. Phys. 94, 443–453 (2003) https://doi.org/10.1063/1.1574598

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Physical mechanism for saturation of persistent photoconductivity in a GaAs–AlAs/GaAs single heterojunction

S. Prasad

J. Appl. Phys. 94, 454–464 (2003) https://doi.org/10.1063/1.1581343

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Theory of electron-mobility degradation caused by roughness with long correlation length in strained-silicon devices

Isao Kitagawa; Takuya Maruizumi; Nobuyuki Sugii

J. Appl. Phys. 94, 465–470 (2003) https://doi.org/10.1063/1.1582231

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Light-induced bias stress reversal in polyfluorene thin-film transistors

A. Salleo; R. A. Street

J. Appl. Phys. 94, 471–479 (2003) https://doi.org/10.1063/1.1581352

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Electronic structure analysis of Zr silicate and Hf silicate films by using spatially resolved valence electron energy-loss spectroscopy

Nobuyuki Ikarashi; Kenzo Manabe

J. Appl. Phys. 94, 480–486 (2003) https://doi.org/10.1063/1.1580642

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Enhanced electron emission from carbon nanotubes through density control using in situ plasma treatment of catalyst metal

Jong Hyung Choi; Sun Hong Choi; Jae-Hee Han; Ji-Beom Yoo; Chong-Yun Park; Taewon Jung; SeGi Yu; In-Taek Han; J. M. Kim

J. Appl. Phys. 94, 487–490 (2003) https://doi.org/10.1063/1.1581377

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Exact connections between effective magnetostriction and effective elastic moduli of fibrous composites and polycrystals

T. Chen; C.-W. Nan; G. J. Weng

J. Appl. Phys. 94, 491–495 (2003) https://doi.org/10.1063/1.1576512

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One-step processing of spinel ferrites via the high-energy ball milling of binary oxides

V. G. Harris; D. J. Fatemi; J. O. Cross; E. E. Carpenter; V. M. Browning; J. P. Kirkland; Amitabh Mohan; Gary J. Long

J. Appl. Phys. 94, 496–501 (2003) https://doi.org/10.1063/1.1577225

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ac losses in circular disks of thin ${YBa}_{2} {Cu}_{3} O_{7}$ films in perpendicular magnetic fields

M. Suenaga; V. F. Solovyov; Q. Li; Z. Ye; H. J. Wiesmann; M. Iwakuma; M. Fukui; K. Toyota; F. Funaki; T. H. Johansen; D. V. Shantsev; J. R. Clem

J. Appl. Phys. 94, 502–506 (2003) https://doi.org/10.1063/1.1579130

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Influence of quantum effects on giant magnetoresistance for multilayer structures

X. H. Zeng; H. X. Chen; X. L. Xu; H. E. Ruda; Bi Qiao

J. Appl. Phys. 94, 507–513 (2003) https://doi.org/10.1063/1.1581379

Abstract

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Transport, magnetic, specific heat, internal friction, and shear modulus in the charge ordered ${La}_{0.25} {Ca}_{0.75} {MnO}_{3}$ manganite

R. K. Zheng; A. N. Tang; Y. Yang; W. Wang; G. Li; X. G. Li; H. C. Ku

J. Appl. Phys. 94, 514–518 (2003) https://doi.org/10.1063/1.1583150

Abstract

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Molecular nitrogen $(N_{2}^{-})$ acceptors and isolated nitrogen $(N^{-})$ acceptors in ZnO crystals

N. Y. Garces; Lijun Wang; N. C. Giles; L. E. Halliburton; G. Cantwell; D. B. Eason

J. Appl. Phys. 94, 519–524 (2003) https://doi.org/10.1063/1.1580193

Abstract

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Magnetization reversal in antiferromagnetically coupled ternary layers

Y. J. Wang; S. T. Chui

J. Appl. Phys. 94, 525–528 (2003) https://doi.org/10.1063/1.1582236

Abstract

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Linear stochastic magnetization dynamics and microscopic relaxation mechanisms

Vladimir L. Safonov; H. Neal Bertram

J. Appl. Phys. 94, 529–538 (2003) https://doi.org/10.1063/1.1581349

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Structure and magnetic properties of thermally annealed $({Ni}_{80} {Fe}_{20})_{1−x} {Mn}_{x}$ thin films

C. S. Yoon; S. J. Kim; Suk Jun Kim; C. K. Kim

J. Appl. Phys. 94, 539–543 (2003) https://doi.org/10.1063/1.1583151

Abstract

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Structural and electrical properties of c-axis epitaxial homologous ${Sr}_{m−3} {Bi}_{4} {Ti}_{m} O_{3m+3}$ $(m=3,$ 4, 5, and 6) thin films

S. T. Zhang; Y. F. Chen; H. P. Sun; X. Q. Pan; W. S. Tan; Z. G. Liu; N. B. Ming

J. Appl. Phys. 94, 544–550 (2003) https://doi.org/10.1063/1.1579864

Abstract

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Physical and electrical characterization of ${HfO}_{2}$ metal–insulator–metal capacitors for Si analog circuit applications

Hang Hu; Chunxiang Zhu; Y. F. Lu; Y. H. Wu; T. Liew; M. F. Li; B. J. Cho; W. K. Choi; N. Yakovlev

J. Appl. Phys. 94, 551–557 (2003) https://doi.org/10.1063/1.1579550

Abstract

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Effective-medium model for nearly constant loss in ionic conductors

J. Ross Macdonald

J. Appl. Phys. 94, 558–565 (2003) https://doi.org/10.1063/1.1576289

Abstract

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Nonlinear screening of pyroelectric films and grains in semiconductor matrix

A. P. Dmitriev; V. Yu. Kachorovskii; M. S. Shur; R. Gaska

J. Appl. Phys. 94, 566–572 (2003) https://doi.org/10.1063/1.1576491

Abstract

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Shock wave compression of the ferroelectric ceramic ${Pb}_{0.99} ({Zr}_{0.95} {Ti}_{0.05})_{0.98} {Nb}_{0.02} O_{3} :$ Hugoniot states and constitutive mechanical properties

Robert E. Setchell

J. Appl. Phys. 94, 573–588 (2003) https://doi.org/10.1063/1.1578526

Abstract

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Crystallization kinetics and dielectric properties in sol-gel derived (Pb,La)(Zr,Sn,Ti)O₃ ceramics

Jiwei Zhai; Haydn Chen

J. Appl. Phys. 94, 589–593 (2003) https://doi.org/10.1063/1.1581361

Abstract

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Role of oxygen pressure in growth of ${CeAlO}_{x}$ thin films on Si by pulsed laser deposition

L. Yan; L. B. Kong; J. S. Pan; C. K. Ong

J. Appl. Phys. 94, 594–597 (2003) https://doi.org/10.1063/1.1579127

Abstract

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Dielectric properties of $Ba ({Zr}_{x} {Ti}_{1−x}) O_{3}$ thin films prepared using radio frequency magnetron sputtering

Chi-Shiung Hsi; Chung-Yi Chen; Nan-Chung Wu; Moo-Chin Wang

J. Appl. Phys. 94, 598–604 (2003) https://doi.org/10.1063/1.1574179

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Structural and electrical properties of $(1−x) Bi ({Ga}_{1/4} {Sc}_{3/4}) O_{3} –x {PbTiO}_{3}$ piezoelectric ceramics

Jinrong Cheng; Richard Eitel; Nan Li; L. E. Cross

J. Appl. Phys. 94, 605–609 (2003) https://doi.org/10.1063/1.1579543

Abstract

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Stability of 180° domain in ferroelectric thin films

Biao Wang; C. H. Woo

J. Appl. Phys. 94, 610–617 (2003) https://doi.org/10.1063/1.1578529

Abstract

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Size effect on the ferroelectric phase transition in ${SrBi}_{2} {Ta}_{2} O_{9}$ nanoparticles

T. Yu; Z. X. Shen; W. S. Toh; J. M. Xue; J. Wang

J. Appl. Phys. 94, 618–620 (2003) https://doi.org/10.1063/1.1583146

Abstract

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NANOSCALE SCIENCE AND DESIGN

In situ conductance characterization of Fe/Ag multilayer contacts on GaAs

D. A. Hite; S. E. Russek; D. P. Pappas

J. Appl. Phys. 94, 621–625 (2003) https://doi.org/10.1063/1.1577398

Abstract

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Magnetic force images of nanomagnetic domains taken with platinum-coated tips

O. Teschke; M. U. Kleinke; M. E. R. Dotto; D. M. Soares; M. Knobel; E. F. de Souza

J. Appl. Phys. 94, 626–632 (2003) https://doi.org/10.1063/1.1579546

Abstract

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Room temperature nanocrystalline silicon single-electron transistors

Y. T. Tan; T. Kamiya; Z. A. K. Durrani; H. Ahmed

J. Appl. Phys. 94, 633–637 (2003) https://doi.org/10.1063/1.1569994

Abstract

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Mössbauer study of the magnetism and structure of amorphous and nanocrystalline ${Fe}_{81−x} {Ni}_{x} {Zr}_{7} B_{12} (x=10–40)$ alloys

M. Kopcewicz; B. Idzikowski; J. Kalinowska

J. Appl. Phys. 94, 638–649 (2003) https://doi.org/10.1063/1.1578701

Abstract

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GaN nanotip pyramids formed by anisotropic etching

Hock M. Ng; Nils G. Weimann; Aref Chowdhury

J. Appl. Phys. 94, 650–653 (2003) https://doi.org/10.1063/1.1582233

Abstract

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Optical absorption behavior of ${ZrO}_{2} - {TiO}_{2}$ nanolaminate films

C. R. Aita; J. D. DeLoach; R. S. Sorbello

J. Appl. Phys. 94, 654–663 (2003) https://doi.org/10.1063/1.1581346

Abstract

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Exchange-coupling interaction, effective anisotropy and coercivity in nanocomposite permanent materials

R. W. Gao; W. C. Feng; H. Q. Liu; B. Wang; W. Chen; G. B. Han; P. Zhang; H. Li; W. Li; Y. Q. Guo; W. Pan; X. M. Li; M. G. Zhu; X. Li

J. Appl. Phys. 94, 664–668 (2003) https://doi.org/10.1063/1.1581380

Abstract

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Nanolithography using molecular optics

Robert J. Gordon; Langchi Zhu; W. Andreas Schroeder; Tamar Seideman

J. Appl. Phys. 94, 669–676 (2003) https://doi.org/10.1063/1.1578173

Abstract

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DEVICE PHYSICS (PACS 85)

Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device

Masahiro Asada

J. Appl. Phys. 94, 677–685 (2003) https://doi.org/10.1063/1.1578698

Abstract

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Influence of electric artwork on thermomechanical properties and warpage of printed circuit boards

Joachim L. Grenestedt; Parsaoran Hutapea

J. Appl. Phys. 94, 686–696 (2003) https://doi.org/10.1063/1.1580645

Abstract

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Strain and texture analysis of coatings using high-energy x-rays

J. Almer; U. Lienert; R. L. Peng; C. Schlauer; M. Odén

J. Appl. Phys. 94, 697–702 (2003) https://doi.org/10.1063/1.1582351

Abstract

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Modeling random telegraph signals in the gate current of metal–oxide–semiconductor field effect transistors after oxide breakdown

A. Avellán; D. Schroeder; W. Krautschneider

J. Appl. Phys. 94, 703–708 (2003) https://doi.org/10.1063/1.1579134

Abstract

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APPLIED BIOPHYSICS (PACS 87)

Interferometric analysis of ultrashort pulse laser-induced pressure waves in water

Beop-Min Kim; Aleksey M. Komashko; Alexander M. Rubenchik; Michael D. Feit; Steffen Reidt; Luiz B. Da Silva; Jürgen Eichler

J. Appl. Phys. 94, 709–715 (2003) https://doi.org/10.1063/1.1578700

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

${Si}_{0.85} {Ge}_{0.15}$ oxynitridation in nitric oxide/nitrous oxide ambient

Anindya Dasgupta; Christos G. Takoudis; Yuanyuan Lei; Nigel D. Browning

J. Appl. Phys. 94, 716–719 (2003) https://doi.org/10.1063/1.1576489

Abstract

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Combinatorial preparation and infrared screening of hydrogen sorbing metal alloys

C. H. Olk; G. G. Tibbetts; D. Simon; J. J. Moleski

J. Appl. Phys. 94, 720–725 (2003) https://doi.org/10.1063/1.1577815

Abstract

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Ultrathin silicon oxynitride formed by low-energy electron impact plasma nitridation and chemical oxidation methods

Masao Takahashi; Masafumi Tamura; Asuha; Takuya Kobayashi; Hikaru Kobayashi

J. Appl. Phys. 94, 726–731 (2003) https://doi.org/10.1063/1.1578702

Abstract

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In situ fluorine-modified organosilicate glass prepared by plasma enhanced chemical vapor deposition

Shiuh-Ko JangJean; Ying-Lang Wang; Chuan-Pu Liu; Weng-Sing Hwang; Wei-Tsu Tseng; Chi-Wen Liu

J. Appl. Phys. 94, 732–737 (2003) https://doi.org/10.1063/1.1578171

Abstract

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Deformation in the heat affected zone during spot welding of a nickel-based single crystal

O. M. Barabash; S. S. Babu; S. A. David; J. M. Vitek; R. I. Barabash

J. Appl. Phys. 94, 738–742 (2003) https://doi.org/10.1063/1.1579863

Abstract

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Self-assembly of epitaxial Ag nanoclusters on H-terminated Si(111) surfaces

B. Q. Li; J. M. Zuo

J. Appl. Phys. 94, 743–748 (2003) https://doi.org/10.1063/1.1581341

Abstract

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Analysis of electromagnetic oscillations in dielectric cathode with grid electrodes

Yasushi Hayashi; Akitoshi Okino; Eiki Hotta

J. Appl. Phys. 94, 749–755 (2003) https://doi.org/10.1063/1.1579544

Abstract

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Photodegradation of selected π-conjugated electro-optic chromophores

A. Galvan-Gonzalez; K. D. Belfield; G. I. Stegeman; M. Canva; S. R. Marder; K. Staub; G. Levina; R. J. Twieg

J. Appl. Phys. 94, 756–763 (2003) https://doi.org/10.1063/1.1578703

Abstract

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Work function of MgO single crystals from ion-induced secondary electron emission coefficient

Jae Yong Lim; Jun Soek Oh; Byung Doc Ko; Jae Won Cho; Seung Oun Kang; Guangsup Cho; Han Sup Uhm; Eun Ha Choi

J. Appl. Phys. 94, 764–769 (2003) https://doi.org/10.1063/1.1581376

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Solid-phase crystallization behaviors of in situ phosphorous-doped amorphous silicon films deposited using ${Si}_{2} H_{6}$ and ${PH}_{3}$

Shigeyuki Yokoyama; Hisayuki Onizuka; Yuki Yoshizawa; Hiroshi Kuwano

J. Appl. Phys. 94, 770–773 (2003) https://doi.org/10.1063/1.1582234

Abstract

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Growth and nanostructure of conformal ruthenium films by liquid-source metalorganic chemical vapor deposition

S. K. Dey; J. Goswami; A. Das; W. Cao; M. Floyd; R. Carpenter

J. Appl. Phys. 94, 774–777 (2003) https://doi.org/10.1063/1.1576513

Abstract

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Determination of crystallite size in a magnetic nanocomposite using extended x-ray absorption fine structure

S. Calvin; M. M. Miller; R. Goswami; S.-F. Cheng; S. P. Mulvaney; L. J. Whitman; V. G. Harris

J. Appl. Phys. 94, 778–783 (2003) https://doi.org/10.1063/1.1581344

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Iron oxidation under the influence of phosphate thin films

J. L. Grosseau-Poussard; B. Panicaud; F. Pedraza; P. O. Renault; J. F. Silvain

J. Appl. Phys. 94, 784–788 (2003) https://doi.org/10.1063/1.1579126

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Noise shielding system utilizing a thin piezoelectric membrane and elasticity control

P. Mokrý; E. Fukada; K. Yamamoto

J. Appl. Phys. 94, 789–796 (2003) https://doi.org/10.1063/1.1583152

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COMMUNICATIONS

Simulation of tuning of one-dimensional photonic crystals in the presence of free electrons and holes

Adán S. Sánchez; P. Halevi

J. Appl. Phys. 94, 797–799 (2003) https://doi.org/10.1063/1.1579569

Abstract

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Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy

Y. S. Park; H. S. Lee; J. H. Na; H. J. Kim; Sang Man Si; Hwa-Mok Kim; T. W. Kang; Jae Eung Oh

J. Appl. Phys. 94, 800–802 (2003) https://doi.org/10.1063/1.1581375

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Comment on “Ultrafast electron optics: Propagation dynamics of femtosecond electron packets” [J. Appl. Phys. 92, 1643 (2002)]

Bao-Liang Qian; Hani E. Elsayed-Ali

J. Appl. Phys. 94, 803–806 (2003) https://doi.org/10.1063/1.1567816

Abstract

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Response to “Comment on ‘Ultrafast electron optics: Propagation dynamics of femtosecond electron packets’ ” [J. Appl. Phys. 94, 803 (2003)]

Bradley J. Siwick; Jason R. Dwyer; Robert E. Jordan; R. J. Dwayne Miller

J. Appl. Phys. 94, 807–808 (2003) https://doi.org/10.1063/1.1567817

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Issues

APPLIED PHYSICS REVIEWS - FOCUSED REVIEW

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

APPLIED BIOPHYSICS (PACS 87)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

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