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Issues
1 May 2003
ISSN 0021-8979
EISSN 1089-7550
In this Issue
APPLIED PHYSICS REVIEWS—FOCUSED REVIEW
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Method of increasing spatial resolution of the scanning near-field microwave microscopy
J. Appl. Phys. 93, 4979–4985 (2003)
https://doi.org/10.1063/1.1522486
Effects of spacer thickness on optical properties of stacked Ge/Si quantum dots grown by chemical vapor deposition
J. Appl. Phys. 93, 4999–5002 (2003)
https://doi.org/10.1063/1.1564883
Photoluminescence emission and Raman scattering polarization in birefringent organic microcavities in the strong coupling regime
D. N. Krizhanovskii; R. Butté; L. G. Connolly; A. I. Tartakovskii; D. G. Lidzey; M. S. Skolnick; S. Walker
J. Appl. Phys. 93, 5003–5007 (2003)
https://doi.org/10.1063/1.1563826
Cooperative upconversion as the gain-limiting factor in Er doped miniature optical waveguide amplifiers
J. Appl. Phys. 93, 5008–5012 (2003)
https://doi.org/10.1063/1.1565697
Accessing the optical limiting properties of metallo-dielectric photonic band gap structures
J. Appl. Phys. 93, 5013–5017 (2003)
https://doi.org/10.1063/1.1564283
Photoluminescence transitions in semiconductor superlattices. Theoretical calculations for InGaN blue laser device
J. Appl. Phys. 93, 5018–5024 (2003)
https://doi.org/10.1063/1.1565698
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
Evaluation of improved efficiency with a diamond coating for a plasma display panel electrode
J. Appl. Phys. 93, 5043–5052 (2003)
https://doi.org/10.1063/1.1567034
Fourier-transform infrared and optical emission spectroscopy of //Ar mixtures in an inductively coupled plasma
J. Appl. Phys. 93, 5053–5062 (2003)
https://doi.org/10.1063/1.1563819
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
Influence of a pre-deposited carbon submonolayer on the Ge island nucleation on Si(001)
J. Appl. Phys. 93, 5069–5074 (2003)
https://doi.org/10.1063/1.1562747
Analysis of multijunction solar cell degradation in space and irradiation induced recombination centers
J. Appl. Phys. 93, 5080–5084 (2003)
https://doi.org/10.1063/1.1561999
Dynamic mechanisms in photoluminescence of gallium-doped ZnSe grown by molecular-beam epitaxy
J. Appl. Phys. 93, 5091–5094 (2003)
https://doi.org/10.1063/1.1563822
Effect of ion implantation on surface energy of ultrahigh molecular weight polyethylene
J. Appl. Phys. 93, 5103–5108 (2003)
https://doi.org/10.1063/1.1559943
Precipitation-induced photostimulated luminescence in
J. Appl. Phys. 93, 5109–5112 (2003)
https://doi.org/10.1063/1.1563303
High resolution electrical studies of vacancy-rich and interstitial-rich regions in ion-implanted silicon
J. Appl. Phys. 93, 5118–5124 (2003)
https://doi.org/10.1063/1.1564286
Luminescence, radiation damage, and color center creation in -doped fiber single crystals
J. B. Shim; A. Yoshikawa; A. Bensalah; T. Fukuda; N. Solovieva; M. Nikl; E. Rosetta; A. Vedda; D. H. Yoon
J. Appl. Phys. 93, 5131–5135 (2003)
https://doi.org/10.1063/1.1563816
thin films with room-temperature metal–insulator transition deposited by pulsed laser ablation
J. Appl. Phys. 93, 5136–5139 (2003)
https://doi.org/10.1063/1.1563815
GaN evaporation and enhanced diffusion of Ar during high-temperature ion implantation
J. Appl. Phys. 93, 5140–5142 (2003)
https://doi.org/10.1063/1.1564271
Unambiguous x-ray phase retrieval from Fraunhofer diffraction data
Karen K-W Siu; Andrei Y. Nikulin; Peter Wells; Erol Harvey; Thierry Bigault; Andreas K. Freund; Tetsuya Ishikawa
J. Appl. Phys. 93, 5161–5166 (2003)
https://doi.org/10.1063/1.1565674
Shock wave induced vaporization of porous solids
J. Appl. Phys. 93, 5167–5174 (2003)
https://doi.org/10.1063/1.1563035
Phonon spectrum and thermal properties of cubic from first-principles calculations
J. Appl. Phys. 93, 5175–5180 (2003)
https://doi.org/10.1063/1.1566473
Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
J. Appl. Phys. 93, 5181–5184 (2003)
https://doi.org/10.1063/1.1565171
Thermodynamic model of low-temperature molecular beam epitaxy of GaN with hydrazine
J. Appl. Phys. 93, 5185–5190 (2003)
https://doi.org/10.1063/1.1565495
Soft x-ray excited optical luminescence from poly(N-vinylcarbazole)
J. Appl. Phys. 93, 5191–5195 (2003)
https://doi.org/10.1063/1.1565492
Morphology and interdiffusion behavior of evaporated metal films on crystalline diindenoperylene thin films
J. Appl. Phys. 93, 5201–5209 (2003)
https://doi.org/10.1063/1.1556180
Effect of microstructure on diffusion of copper in TiN films
J. Appl. Phys. 93, 5210–5214 (2003)
https://doi.org/10.1063/1.1566472
Disorder in silicon films grown epitaxially at low temperature
J. Appl. Phys. 93, 5215–5221 (2003)
https://doi.org/10.1063/1.1563059
Determination of the refractive indices of AlN, GaN, and grown on (111)Si substrates
N. Antoine-Vincent; F. Natali; M. Mihailovic; A. Vasson; J. Leymarie; P. Disseix; D. Byrne; F. Semond; J. Massies
J. Appl. Phys. 93, 5222–5226 (2003)
https://doi.org/10.1063/1.1563293
Structural phase transitions in films induced by ion bombardment—Argon irradiation versus implantation
J. Appl. Phys. 93, 5251–5254 (2003)
https://doi.org/10.1063/1.1565821
Ga/N flux ratio influence on Mn incorporation, surface morphology, and lattice polarity during radio frequency molecular beam epitaxy of (Ga,Mn)N
Muhammad B. Haider; Costel Constantin; Hamad Al-Brithen; Haiqiang Yang; Eugen Trifan; David Ingram; Arthur R. Smith; C. V. Kelly; Y. Ijiri
J. Appl. Phys. 93, 5274–5281 (2003)
https://doi.org/10.1063/1.1565511
Formation of quasi-single-domain 3C-SiC on nominally on-axis Si(001) substrate using organosilane buffer layer
J. Appl. Phys. 93, 5282–5286 (2003)
https://doi.org/10.1063/1.1564861
A model for instability growth in accelerated solid metals
J. Appl. Phys. 93, 5287–5301 (2003)
https://doi.org/10.1063/1.1565188
Photoluminescence of iodine-doped ZnTe homoepitaxial layer grown by metalorganic vapor phase epitaxy
J. Appl. Phys. 93, 5302–5306 (2003)
https://doi.org/10.1063/1.1565826
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
X-ray standing wave studies of strained short-period superlattices
J. Appl. Phys. 93, 5307–5315 (2003)
https://doi.org/10.1063/1.1562736
Rashba spin-orbit effect on traversal time in ferromagnetic/semiconductor/ferromagnetic heterojunction
J. Appl. Phys. 93, 5316–5320 (2003)
https://doi.org/10.1063/1.1562733
Investigation of accumulated carrier mechanism on sulfurated GaN layers
J. Appl. Phys. 93, 5321–5324 (2003)
https://doi.org/10.1063/1.1563821
Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS
J. Appl. Phys. 93, 5325–5330 (2003)
https://doi.org/10.1063/1.1559633
Formation of highly conductive polycrystalline GaAs from annealed amorphous (Ga,As)
J. Appl. Phys. 93, 5331–5336 (2003)
https://doi.org/10.1063/1.1563817
Generation–recombination noise in gallium nitride-based quantum well structures
J. Appl. Phys. 93, 5337–5345 (2003)
https://doi.org/10.1063/1.1562000
Ohmic loss in frequency-selective surfaces
J. Appl. Phys. 93, 5346–5358 (2003)
https://doi.org/10.1063/1.1565189
Theory of carrier-density-fluctuation-induced transport noise in metal-oxide-semiconductor field-effect transistors
J. Appl. Phys. 93, 5359–5368 (2003)
https://doi.org/10.1063/1.1563301
Relationship between charge distribution and its image by electrostatic force microscopy
J. Appl. Phys. 93, 5369–5376 (2003)
https://doi.org/10.1063/1.1559411
Catalytic graphitization and Ohmic contact formation on 4H–SiC
J. Appl. Phys. 93, 5397–5403 (2003)
https://doi.org/10.1063/1.1562737
Compliant epitaxial growth of and on pseudosubstrates
J. Appl. Phys. 93, 5429–5434 (2003)
https://doi.org/10.1063/1.1565692
Ballistic and quasiballistic tunnel transit time oscillators for the terahertz range: Linear admittance
J. Appl. Phys. 93, 5435–5446 (2003)
https://doi.org/10.1063/1.1565496
Method to extract diffusion length from solar cell parameters—Application to polycrystalline silicon
J. Appl. Phys. 93, 5447–5455 (2003)
https://doi.org/10.1063/1.1565676
Evolution of the band structure of buffer layer with its oxygen content
J. Appl. Phys. 93, 5456–5459 (2003)
https://doi.org/10.1063/1.1565823
Hole-transport properties of a furan-containing oligoaryl
J. Appl. Phys. 93, 5465–5471 (2003)
https://doi.org/10.1063/1.1567056
Indium–tin–oxide surface treatments: Influence on the performance of solar cells
J. Appl. Phys. 93, 5472–5479 (2003)
https://doi.org/10.1063/1.1565824
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Structural, electric and magnetic properties of the electron-doped manganese oxide: 0.15)
J. Appl. Phys. 93, 5480–5483 (2003)
https://doi.org/10.1063/1.1562753
Kerr observations of asymmetric magnetization reversal processes in CoFe/IrMn bilayer systems
J. Appl. Phys. 93, 5491–5497 (2003)
https://doi.org/10.1063/1.1562732
Direct measurements of magnetocaloric effect in the first-order system
F. X. Hu; Max Ilyn; A. M. Tishin; J. R. Sun; G. J. Wang; Y. F. Chen; F. Wang; Z. H. Cheng; B. G. Shen
J. Appl. Phys. 93, 5503–5506 (2003)
https://doi.org/10.1063/1.1563036
Substrate induced strain effects in epitaxial thin films
T. Wu; S. B. Ogale; S. R. Shinde; Amlan Biswas; T. Polletto; R. L. Greene; T. Venkatesan; A. J. Millis
J. Appl. Phys. 93, 5507–5513 (2003)
https://doi.org/10.1063/1.1566090
Influence of the Ar-ion irradiation on the giant magnetoresistance in Fe/Cr multilayers
J. Appl. Phys. 93, 5514–5518 (2003)
https://doi.org/10.1063/1.1559640
Quantifiable combinatorial materials science approach applied to perpendicular magnetic recording media
J. Appl. Phys. 93, 5519–5526 (2003)
https://doi.org/10.1063/1.1563843
Electronic structure and magnetic properties of alloy films with different structural orders
J. Appl. Phys. 93, 5527–5530 (2003)
https://doi.org/10.1063/1.1559638
Thermal conductivity in large residual resistance ratio wire
J. Appl. Phys. 93, 5531–5537 (2003)
https://doi.org/10.1063/1.1563304
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Dielectric properties of carbon fiber filled low-density polyethylene
J. Appl. Phys. 93, 5543–5545 (2003)
https://doi.org/10.1063/1.1562740
Metal drift induced electrical instability of porous low dielectric constant film
J. Appl. Phys. 93, 5546–5550 (2003)
https://doi.org/10.1063/1.1563292
Ferroelectric properties of epitaxial films for ferroelectric-gate field-effect transistors
J. Appl. Phys. 93, 5563–5567 (2003)
https://doi.org/10.1063/1.1564862
Grain boundary electric characterization of semiconducting ceramic: A negative temperature coefficient thermistor
J. Appl. Phys. 93, 5576–5582 (2003)
https://doi.org/10.1063/1.1566092
NANOSCALE SCIENCE AND DESIGN
Field emission of large-area and graphitized carbon nanotube array on anodic aluminum oxide template
Han Gao; Cheng Mu; Fan Wang; Dongsheng Xu; Kai Wu; Youchang Xie; Shuang Liu; Enge Wang; Jun Xu; Dapeng Yu
J. Appl. Phys. 93, 5602–5605 (2003)
https://doi.org/10.1063/1.1564882
Bonding structure in nitrogen doped ultrananocrystalline diamond
J. Appl. Phys. 93, 5606–5612 (2003)
https://doi.org/10.1063/1.1564880
A simple quantum mechanical treatment of scattering in nanoscale transistors
J. Appl. Phys. 93, 5613–5625 (2003)
https://doi.org/10.1063/1.1563298
Nanoscale phase separation in films on sapphire(0001) and phase stability of films on MgO(001) grown by oxygen-plasma-assisted molecular beam epitaxy
R. F. C. Farrow; P. M. Rice; M. F. Toney; R. F. Marks; J. A. Hedstrom; R. Stephenson; M. J. Carey; A. J. Kellock
J. Appl. Phys. 93, 5626–5636 (2003)
https://doi.org/10.1063/1.1556174
Thermal oxidation of silicon nanocrystals in and NO ambient
K. C. Scheer; R. A. Rao; R. Muralidhar; S. Bagchi; J. Conner; L. Lozano; C. Perez; M. Sadd; B. E. White, Jr.
J. Appl. Phys. 93, 5637–5642 (2003)
https://doi.org/10.1063/1.1565172
Nanoparticle formation in microchannel glass by plasma enhanced chemical vapor deposition
D. N. McIlroy; J. Huso; Y. Kranov; J. Marchinek; C. Ebert; S. Moore; E. Marji; R. Gandy; Y.-K. Hong; M. Grant Norton; E. Cavalieri; Rudy Benz; B. L. Justus; A. Rosenberg
J. Appl. Phys. 93, 5643–5649 (2003)
https://doi.org/10.1063/1.1564881
Measurement of elastic modulus of nanotubes by resonant contact atomic force microscopy
J. Appl. Phys. 93, 5650–5655 (2003)
https://doi.org/10.1063/1.1565675
Oriented ferromagnetic Fe-Pt alloy nanoparticles produced in by ion-beam synthesis
J. Appl. Phys. 93, 5656–5669 (2003)
https://doi.org/10.1063/1.1565691
Structure and orientation of epitaxial titanium silicide nanowires determined by electron microdiffraction
J. Appl. Phys. 93, 5670–5674 (2003)
https://doi.org/10.1063/1.1565173
DEVICE PHYSICS (PACS 85)
GaN Schottky diodes for piezoelectric strain sensing
J. Appl. Phys. 93, 5675–5681 (2003)
https://doi.org/10.1063/1.1558960
Electrical and physical characterization of gate oxides on grown in diluted
J. Appl. Phys. 93, 5682–5686 (2003)
https://doi.org/10.1063/1.1555696
Influence of space charge on gate control of electron waveguide Y-branch switches in the coherent regime
J. Appl. Phys. 93, 5687–5690 (2003)
https://doi.org/10.1063/1.1563294
Quantitative analysis of dislocation arrangements induced by electromigration in a passivated interconnect
J. Appl. Phys. 93, 5701–5706 (2003)
https://doi.org/10.1063/1.1563033
Phonon absorption by superconducting tunnel junction x-ray detectors
J. Appl. Phys. 93, 5707–5713 (2003)
https://doi.org/10.1063/1.1562742
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Microstructure and open-circuit voltage of microcrystalline silicon solar cells
J. Appl. Phys. 93, 5727–5732 (2003)
https://doi.org/10.1063/1.1562746
Monitoring precipitation rates using γ rays from adsorbed radon progeny as tracers
J. Appl. Phys. 93, 5733–5741 (2003)
https://doi.org/10.1063/1.1563313
Electrical characterization of metal/AlN/Si thin film hydrogen sensors with Pd and Al gates
J. Appl. Phys. 93, 5757–5762 (2003)
https://doi.org/10.1063/1.1563312
Dependence of ablation parameters on the temperature and phase of ablated material
J. Appl. Phys. 93, 5763–5768 (2003)
https://doi.org/10.1063/1.1563299
Structure evolution in electrorheological and magnetorheological suspensions from a continuum perspective
J. Appl. Phys. 93, 5769–5779 (2003)
https://doi.org/10.1063/1.1563037
Kinetics of defect creation in amorphous silicon thin film transistors
J. Appl. Phys. 93, 5780–5788 (2003)
https://doi.org/10.1063/1.1565689
Polymer nanocomposite containing CdS–ZnS core–shell particles: Optical properties and morphology
J. Appl. Phys. 93, 5789–5793 (2003)
https://doi.org/10.1063/1.1565830
Equilibrium behavior of sessile drops under surface tension, applied external fields, and material variations
J. Appl. Phys. 93, 5794–5811 (2003)
https://doi.org/10.1063/1.1563828
Modeling of aluminum via filling by forcefill
J. Appl. Phys. 93, 5812–5815 (2003)
https://doi.org/10.1063/1.1565512
Sputtering yield measurements during low energy xenon plasma bombardment
J. Appl. Phys. 93, 5816–5823 (2003)
https://doi.org/10.1063/1.1566474
COMMUNICATIONS
Phonon modes of GaN/AlN heterojunction field-effect transistor structures grown on Si(111) substrates
J. Appl. Phys. 93, 5824–5826 (2003)
https://doi.org/10.1063/1.1561583
Focused ion beam prepared contacts of tungsten to silicon characterized by a cross-bridge Kelvin resistor approach
J. Appl. Phys. 93, 5827–5829 (2003)
https://doi.org/10.1063/1.1562738
Effects of tensile strain in barrier on optical gain spectra of GaInNAs/GaAsN quantum wells
J. Appl. Phys. 93, 5836–5838 (2003)
https://doi.org/10.1063/1.1566469
Effect of a nucleating agent on lamellar growth in melt-crystallizing polyethylene oxide
J. Appl. Phys. 93, 5839–5841 (2003)
https://doi.org/10.1063/1.1564877
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.