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Issues
1 April 2003
ISSN 0021-8979
EISSN 1089-7550
In this Issue
APPLIED PHYSICS REVIEWS - FOCUSED REVIEW
Small molecular weight organic thin-film photodetectors and solar cells
J. Appl. Phys. 93, 3693–3723 (2003)
https://doi.org/10.1063/1.1534621
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Writing optical waveguides in fused silica using 1 kHz femtosecond infrared pulses
J. Appl. Phys. 93, 3724–3728 (2003)
https://doi.org/10.1063/1.1557777
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
characteristics of the Langmuir probe in flowing afterglow plasmas
J. Appl. Phys. 93, 3729–3746 (2003)
https://doi.org/10.1063/1.1554754
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
High-accuracy determination of the dependence of the photoluminescence emission energy on alloy composition in films
Lawrence H. Robins; John T. Armstrong; Ryna B. Marinenko; Albert J. Paul; Joseph G. Pellegrino; Kristine A. Bertness
J. Appl. Phys. 93, 3747–3759 (2003)
https://doi.org/10.1063/1.1556554
Temperature dependence of the properties of vapor-deposited polyimide
J. Appl. Phys. 93, 3760–3764 (2003)
https://doi.org/10.1063/1.1555838
Electromagnetic enhancement effect in scanning tunneling microscope light emission from GaAs
J. Appl. Phys. 93, 3784–3788 (2003)
https://doi.org/10.1063/1.1554473
Correlation of stress and texture evolution during self- and thermal annealing of electroplated Cu films
J. Appl. Phys. 93, 3796–3804 (2003)
https://doi.org/10.1063/1.1555274
Study of the elastic and elastooptic properties of solid solutions by Brillouin spectroscopy
J. Appl. Phys. 93, 3805–3810 (2003)
https://doi.org/10.1063/1.1556575
Optical properties of thin films using spectroscopic ellipsometry
J. Appl. Phys. 93, 3811–3815 (2003)
https://doi.org/10.1063/1.1559003
Structural and optical properties of molybdenum–tungsten mixed oxide thin films deposited by the sol-gel technique
J. Appl. Phys. 93, 3816–3822 (2003)
https://doi.org/10.1063/1.1555839
Extinction ratio improvement of an electroabsorption modulator by using Be as a -type dopant with small diffusion coefficient
Yasunori Miyazaki; Yoshihiko Hanamaki; Hitoshi Tada; Kazuhisa Takagi; Masayoshi Takemi; Toshitaka Aoyagi; Yutaka Mihashi; Yasuo Mitsui
J. Appl. Phys. 93, 3823–3826 (2003)
https://doi.org/10.1063/1.1559004
Epitaxial growth of high quality ZnO:Al film on silicon with a thin buffer layer
J. Appl. Phys. 93, 3837–3843 (2003)
https://doi.org/10.1063/1.1556181
Monte Carlo simulation of x-ray spectra generated by kilo-electron-volt electrons
J. Appl. Phys. 93, 3844–3851 (2003)
https://doi.org/10.1063/1.1545154
High pressure and high temperature phase transformations in
J. Appl. Phys. 93, 3852–3858 (2003)
https://doi.org/10.1063/1.1556570
Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates
J. Appl. Phys. 93, 3859–3865 (2003)
https://doi.org/10.1063/1.1558963
Mechanism of the Yb–Er energy transfer in fluorozirconate glass
J. Appl. Phys. 93, 3873–3880 (2003)
https://doi.org/10.1063/1.1555679
On the diffusion of lattice matched InGaAs/InP microstructures
J. Appl. Phys. 93, 3881–3885 (2003)
https://doi.org/10.1063/1.1559002
Photoionization cross section of hydrogenic impurities in spherical quantum dots
J. Appl. Phys. 93, 3900–3905 (2003)
https://doi.org/10.1063/1.1555686
Theoretical analysis of optical and magneto-optical properties of one-dimensional magnetophotonic crystals
J. Appl. Phys. 93, 3906–3911 (2003)
https://doi.org/10.1063/1.1559422
Reflective in-plane switching liquid crystal displays
J. Appl. Phys. 93, 3920–3925 (2003)
https://doi.org/10.1063/1.1558967
Thermal stress characteristics of Cu/oxide and Cu/low- submicron interconnect structures
J. Appl. Phys. 93, 3926–3933 (2003)
https://doi.org/10.1063/1.1560851
Cathodoluminescence studies of threading dislocations in InGaN/GaN as a function of electron irradiation dose
J. Appl. Phys. 93, 3934–3939 (2003)
https://doi.org/10.1063/1.1559417
Optical waveguides in lead zinc niobate–lead titanate by He ion implantation
J. Appl. Phys. 93, 3940–3943 (2003)
https://doi.org/10.1063/1.1559413
gas-source molecular beam epitaxy from and Surface reaction paths and growth kinetics
J. Appl. Phys. 93, 3944–3950 (2003)
https://doi.org/10.1063/1.1555704
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
Phase control of chromium oxide in selective microregions by laser annealing
J. Appl. Phys. 93, 3951–3953 (2003)
https://doi.org/10.1063/1.1558204
Properties of amorphous prepared by ion beam assisted deposition at room temperature
J. Appl. Phys. 93, 3954–3962 (2003)
https://doi.org/10.1063/1.1555258
Analysis of ultraviolet photoconductivity in ZnO films prepared by unbalanced magnetron sputtering
J. Appl. Phys. 93, 3963–3970 (2003)
https://doi.org/10.1063/1.1558994
Analysis of centers at the interface following rapid thermal annealing
J. Appl. Phys. 93, 3971–3973 (2003)
https://doi.org/10.1063/1.1559428
Numerical spurious solutions in the effective mass approximation
J. Appl. Phys. 93, 3974–3981 (2003)
https://doi.org/10.1063/1.1555833
Electrical properties of high-κ gate dielectric on Si(001): The influence of postmetallization annealing
J. Appl. Phys. 93, 3982–3989 (2003)
https://doi.org/10.1063/1.1558965
Low frequency noise of GaAs Schottky diodes with embedded InAs quantum layer and self-assembled quantum dots
J. Appl. Phys. 93, 3990–3994 (2003)
https://doi.org/10.1063/1.1559412
Measurement of the band offsets of on clean n- and p-type GaN(0001)
T. E. Cook, Jr.; C. C. Fulton; W. J. Mecouch; K. M. Tracy; R. F. Davis; E. H. Hurt; G. Lucovsky; R. J. Nemanich
J. Appl. Phys. 93, 3995–4004 (2003)
https://doi.org/10.1063/1.1559424
Micropatterning of small molecular weight organic semiconductor thin films using organic vapor phase deposition
J. Appl. Phys. 93, 4005–4016 (2003)
https://doi.org/10.1063/1.1557783
Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling
J. Appl. Phys. 93, 4017–4022 (2003)
https://doi.org/10.1063/1.1558998
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Magnetic properties, Mössbauer and aftereffect studies of nanocomposites
J. Appl. Phys. 93, 4027–4033 (2003)
https://doi.org/10.1063/1.1558997
Ferromagnetic properties of IV–VI diluted magnetic semiconductor films prepared by radio frequency sputtering
J. Appl. Phys. 93, 4034–4039 (2003)
https://doi.org/10.1063/1.1555697
Temperature dependence of the exchange parameter and domain-wall properties
J. Appl. Phys. 93, 4040–4044 (2003)
https://doi.org/10.1063/1.1559434
Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films
J. Appl. Phys. 93, 4045–4048 (2003)
https://doi.org/10.1063/1.1559436
Nonlinear surface impedance of thin films as a function of temperature, frequency, and magnetic field
J. Appl. Phys. 93, 4049–4054 (2003)
https://doi.org/10.1063/1.1559940
Investigations on magnetic refrigeration: Application to Gd, Tb, Dy, Ho, and Er)
J. Appl. Phys. 93, 4055–4059 (2003)
https://doi.org/10.1063/1.1558962
Investigation of high saturation magnetization of low rare-earth content bulk exchange-spring magnets
H. Ono; T. Tayu; N. Waki; T. Sugiyama; M. Shimada; M. Kanou; A. Fujiki; H. Yamamoto; K. Takasugi; M. Tani
J. Appl. Phys. 93, 4060–4065 (2003)
https://doi.org/10.1063/1.1559639
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Dielectric and piezoelectric properties of 〈001〉 fiber-textured ceramics
J. Appl. Phys. 93, 4072–4080 (2003)
https://doi.org/10.1063/1.1554488
Dielectric relaxation of shallow donor in polycrystalline Mn-doped ZnO
J. Appl. Phys. 93, 4097–4103 (2003)
https://doi.org/10.1063/1.1557781
Texture and strain analysis of the ferroelastic behavior of by in situ neutron diffraction
J. Appl. Phys. 93, 4104–4111 (2003)
https://doi.org/10.1063/1.1558229
Polarization behavior of ferroelectric multilayered composite structures
J. Appl. Phys. 93, 4112–4119 (2003)
https://doi.org/10.1063/1.1558961
Field dependent permittivity of composite materials containing ferromagnetic wires
J. Appl. Phys. 93, 4120–4129 (2003)
https://doi.org/10.1063/1.1557780
High dielectric permittivity in nonferroelectric perovskite ceramics (A=Ba, Sr, Ca; B=Nb, Ta, Sb)
J. Appl. Phys. 93, 4130–4136 (2003)
https://doi.org/10.1063/1.1558205
Basic characteristics of metal-ferroelectric-insulator-semiconductor structure using a high- insulator layer
J. Appl. Phys. 93, 4137–4143 (2003)
https://doi.org/10.1063/1.1558206
NANOSCALE SCIENCE AND DESIGN
Atomic layer chemical vapor deposition of -based dielectric films: Nanostructure and nanochemistry
J. Appl. Phys. 93, 4144–4157 (2003)
https://doi.org/10.1063/1.1555257
Effects of substrate temperature on nanostructure and band structure of sputtered thin films
J. Appl. Phys. 93, 4158–4162 (2003)
https://doi.org/10.1063/1.1555681
Phonon heat conduction in micro- and nano-core-shell structures with cylindrical and spherical geometries
J. Appl. Phys. 93, 4163–4168 (2003)
https://doi.org/10.1063/1.1556566
Effect of InAs quantum dots on the Fermi level pinning of undoped- type GaAs surface studied by contactless electroreflectance
Peng Jin; X. Q. Meng; Z. Y. Zhang; C. M. Li; B. Xu; F. Q. Liu; Z. G. Wang; Y. G. Li; C. Z. Zhang; S. H. Pan
J. Appl. Phys. 93, 4169–4172 (2003)
https://doi.org/10.1063/1.1556176
Ellipsometric study of silicon nanocrystal optical constants
J. Appl. Phys. 93, 4173–4179 (2003)
https://doi.org/10.1063/1.1538344
Magnetic properties of Co nanocolumns fabricated by oblique-angle deposition
J. Appl. Phys. 93, 4194–4200 (2003)
https://doi.org/10.1063/1.1558209
Humidity sensing by nanocomposites of silver in silicate glass ceramics
J. Appl. Phys. 93, 4201–4206 (2003)
https://doi.org/10.1063/1.1559427
Nucleation, growth, and graphitization of diamond nanocrystals during chlorination of carbides
J. Appl. Phys. 93, 4207–4214 (2003)
https://doi.org/10.1063/1.1558227
Surface aided polarization reversal in small ferroelectric particles
J. Appl. Phys. 93, 4215–4218 (2003)
https://doi.org/10.1063/1.1558203
DEVICE PHYSICS (PACS 85)
Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications
J. Appl. Phys. 93, 4226–4231 (2003)
https://doi.org/10.1063/1.1555700
Effect of illumination conditions on Czochralski-grown silicon solar cell degradation
J. Appl. Phys. 93, 4240–4245 (2003)
https://doi.org/10.1063/1.1559430
Analysis of noise current sources in InP/InGaAs heterojunction bipolar transistors
J. Appl. Phys. 93, 4246–4252 (2003)
https://doi.org/10.1063/1.1557784
Thermal stability of InP-based high electron mobility transistor epitaxial wafers
J. Appl. Phys. 93, 4260–4267 (2003)
https://doi.org/10.1063/1.1560572
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Relation between microstructure and stress in titanium nitride films grown by plasma immersion ion implantation
J. Appl. Phys. 93, 4283–4288 (2003)
https://doi.org/10.1063/1.1558995
Modeling of the compressible vapor flow induced in a keyhole during laser welding
J. Appl. Phys. 93, 4289–4296 (2003)
https://doi.org/10.1063/1.1557778
Temperature measurement at the end of a cantilever using oxygen paramagnetism in solid air
J. Appl. Phys. 93, 4297–4299 (2003)
https://doi.org/10.1063/1.1555837
Optical activity of electrorheological fluids under external electric field
J. Appl. Phys. 93, 4309–4314 (2003)
https://doi.org/10.1063/1.1559435
COMMUNICATIONS
-type interface defects in structures grown in ozonated water solution
J. Appl. Phys. 93, 4331–4333 (2003)
https://doi.org/10.1063/1.1541103
Plasma characterization with terahertz time–domain measurements
J. Appl. Phys. 93, 4334–4336 (2003)
https://doi.org/10.1063/1.1560564
Effect of Mn substitution on magnetoelectric properties of bismuth ferrite system
J. Appl. Phys. 93, 4337–4339 (2003)
https://doi.org/10.1063/1.1558992
Effect of composition on the band gap of strained alloys
J. Appl. Phys. 93, 4340–4342 (2003)
https://doi.org/10.1063/1.1560563
ERRATA
Publisher’s Note: “Nonstoichiometry and chemical purity effects in thermoelectric clathrate” [J. Appl. Phys. 92, 7281 (2002)]
J. Daniel Bryan; Nick P. Blake; Horia Metiu; Galen D. Stucky; Bo B. Iversen; Rasmus D. Poulsen; Anders Bentien
J. Appl. Phys. 93, 4343 (2003)
https://doi.org/10.1063/1.1556591
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Selecting alternative metals for advanced interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, et al.
Defects in semiconductors
Cyrus E. Dreyer, Anderson Janotti, et al.