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APPLIED PHYSICS REVIEWS—FOCUSED REVIEW

Physics and materials challenges for lead-free solders

K. N. Tu; A. M. Gusak; M. Li

J. Appl. Phys. 93, 1335–1353 (2003) https://doi.org/10.1063/1.1517165

Abstract

View articletitled, Physics and materials challenges for lead-free solders

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Spatially resolved spectroscopic strain measurements on high-power laser diode bars

J. W. Tomm; A. Gerhardt; R. Müller; V. Malyarchuk; Y. Sainte-Marie; P. Galtier; J. Nagle; J.-P. Landesman

J. Appl. Phys. 93, 1354–1362 (2003) https://doi.org/10.1063/1.1533091

Abstract

View articletitled, Spatially resolved spectroscopic strain measurements on high-power laser diode bars

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AlN/AlGaInN superlattice light-emitting diodes at 280 nm

G. Kipshidze; V. Kuryatkov; K. Zhu; B. Borisov; M. Holtz; S. Nikishin; H. Temkin

J. Appl. Phys. 93, 1363–1366 (2003) https://doi.org/10.1063/1.1535255

Abstract

View articletitled, AlN/AlGaInN superlattice light-emitting diodes at 280 nm

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Low-threshold lasing in a microcavity of fluorene-based liquid-crystalline polymer blends

Tae-Woo Lee; O. Ok Park; Hyun Nam Cho; Dong Young Kim; Young Chul Kim

J. Appl. Phys. 93, 1367–1370 (2003) https://doi.org/10.1063/1.1536013

Abstract

View articletitled, Low-threshold lasing in a microcavity of fluorene-based liquid-crystalline polymer blends

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Magnetization-induced second-harmonic generation in electrochemically synthesized magnetic films of ternary metal Prussian blue analogs

Katsuyoshi Ikeda; Shin-ichi Ohkoshi; Kazuhito Hashimoto

J. Appl. Phys. 93, 1371–1375 (2003) https://doi.org/10.1063/1.1536725

Abstract

View articletitled, Magnetization-induced second-harmonic generation in electrochemically synthesized magnetic films of ternary metal Prussian blue analogs

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Inductively coupled plasma etching of SiC in ${SF}_{6} / O_{2}$ and etch-induced surface chemical bonding modifications

Liudi Jiang; R. Cheung; R. Brown; A. Mount

J. Appl. Phys. 93, 1376–1383 (2003) https://doi.org/10.1063/1.1534908

Abstract

View articletitled, Inductively coupled plasma etching of SiC in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SF</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>2</mn></mrow></msub></math> and etch-induced surface chemical bonding modifications

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Measurement of expanding plasma sheath from a target biased by a negative pulse with a fast rise time

Gon-Ho Kim; Young-Woo Kim; Seunghee Han; Han-Sup Uhm; Jeonghee Cho; Min Joong Jung; Munpyo Hong

J. Appl. Phys. 93, 1384–1388 (2003) https://doi.org/10.1063/1.1536721

Abstract

View articletitled, Measurement of expanding plasma sheath from a target biased by a negative pulse with a fast rise time

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Macromolecule formation in low density ${CF}_{4}$ plasmas: The influence of $H_{2}$

M. J. Schabel; T. W. Peterson; A. J. Muscat

J. Appl. Phys. 93, 1389–1402 (2003) https://doi.org/10.1063/1.1535747

Abstract

View articletitled, Macromolecule formation in low density <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CF</mi><mrow><mn>4</mn></mrow></msub></math> plasmas: The influence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math>

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Surface and gas-phase observations of Ar-diluted $c- C_{4} F_{8}$ plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence

Kenji Ishikawa; Shigenori Hayashi; Makoto Sekine

J. Appl. Phys. 93, 1403–1408 (2003) https://doi.org/10.1063/1.1536740

Abstract

View articletitled, Surface and gas-phase observations of Ar-diluted <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c-</mi><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub></math> plasma by using real-time infrared spectroscopy and planar laser-induced fluorescence

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Effect of Tl content on the growth of TlGaAs films by low-temperature molecular-beam epitaxy

Y. Kajikawa; M. Kametani; N. Kobayashi; N. Nishimoto; Y. Yodo; Y. Kitano; Y. Ohtani

J. Appl. Phys. 93, 1409–1416 (2003) https://doi.org/10.1063/1.1531210

Abstract

View articletitled, Effect of Tl content on the growth of TlGaAs films by low-temperature molecular-beam epitaxy

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Relationship between interfacial adhesion and electromigration in Cu metallization

M. W. Lane; E. G. Liniger; J. R. Lloyd

J. Appl. Phys. 93, 1417–1421 (2003) https://doi.org/10.1063/1.1532942

Abstract

View articletitled, Relationship between interfacial adhesion and electromigration in Cu metallization

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Structure and secondary electron emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering

Y. H. Cheng; H. Kupfer; F. Richter; H. Giegengack; W. Hoyer

J. Appl. Phys. 93, 1422–1427 (2003) https://doi.org/10.1063/1.1534375

Abstract

View articletitled, Structure and secondary electron emission properties of MgO films deposited by pulsed mid-frequency magnetron sputtering

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Indium segregation to dislocation loops induced by ion implantation damage in silicon

Taiji Noda

J. Appl. Phys. 93, 1428–1431 (2003) https://doi.org/10.1063/1.1534629

Abstract

View articletitled, Indium segregation to dislocation loops induced by ion implantation damage in silicon

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Free volume coalescence and void formation in shear bands in metallic glass

Wendelin J. Wright; T. C. Hufnagel; W. D. Nix

J. Appl. Phys. 93, 1432–1437 (2003) https://doi.org/10.1063/1.1531212

Abstract

View articletitled, Free volume coalescence and void formation in shear bands in metallic glass

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Effect of implant temperature on defects created using high fluence of helium in silicon

M. L. David; M. F. Beaufort; J. F. Barbot

J. Appl. Phys. 93, 1438–1442 (2003) https://doi.org/10.1063/1.1531814

Abstract

View articletitled, Effect of implant temperature on defects created using high fluence of helium in silicon

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Tensile failure by grain thinning in micromachined aluminum thin films

Hoo-Jeong Lee; Ping Zhang; John C. Bravman

J. Appl. Phys. 93, 1443–1451 (2003) https://doi.org/10.1063/1.1532933

Abstract

View articletitled, Tensile failure by grain thinning in micromachined aluminum thin films

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Diffusion of Si and Ge dimers on Ge (001) surfaces

T. V. Afanasieva; S. Yu. Bulavenko; I. F. Koval; H. J. W. Zandvliet

J. Appl. Phys. 93, 1452–1456 (2003) https://doi.org/10.1063/1.1533107

Abstract

View articletitled, Diffusion of Si and Ge dimers on Ge (001) surfaces

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Quantitative microdiffraction from deformed crystals with unpaired dislocations and dislocation walls

R. I. Barabash; G. E. Ice; F. J. Walker

J. Appl. Phys. 93, 1457–1464 (2003) https://doi.org/10.1063/1.1534378

Abstract

View articletitled, Quantitative microdiffraction from deformed crystals with unpaired dislocations and dislocation walls

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Photoluminescence study of crosslinked reactive mesogens for organic light emitting devices

A. E. A. Contoret; S. R. Farrar; S. M. Khan; M. O’Neill; G. J. Richards; M. P. Aldred; S. M. Kelly

J. Appl. Phys. 93, 1465–1467 (2003) https://doi.org/10.1063/1.1533830

Abstract

View articletitled, Photoluminescence study of crosslinked reactive mesogens for organic light emitting devices

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Formation of light-emitting ${FeSi}_{2}$ in Fe thin films on ion-implanted (111)Si

H. T. Lu; L. J. Chen; Y. L. Chueh; L. J. Chou

J. Appl. Phys. 93, 1468–1471 (2003) https://doi.org/10.1063/1.1534379

Abstract

View articletitled, Formation of light-emitting <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mn>2</mn></mrow></msub></math> in Fe thin films on ion-implanted (111)Si

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Nondestructive evaluation of dislocation structure in cyclically deformed Ni₃Fe single crystals using magnetic techniques

Hiroyuki Y. Yasuda; Akiko Sasaki; Yukichi Umakoshi

J. Appl. Phys. 93, 1472–1476 (2003) https://doi.org/10.1063/1.1534624

Abstract

View articletitled, Nondestructive evaluation of dislocation structure in cyclically deformed Ni3Fe single crystals using magnetic techniques

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Morphology and crystallization kinetics in ${HfO}_{2}$ thin films grown by atomic layer deposition

M.-Y. Ho; H. Gong; G. D. Wilk; B. W. Busch; M. L. Green; P. M. Voyles; D. A. Muller; M. Bude; W. H. Lin; A. See; M. E. Loomans; S. K. Lahiri; Petri I. Räisänen

J. Appl. Phys. 93, 1477–1481 (2003) https://doi.org/10.1063/1.1534381

Abstract

View articletitled, Morphology and crystallization kinetics in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HfO</mi><mrow><mn>2</mn></mrow></msub></math> thin films grown by atomic layer deposition

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Fluorescence properties of trivalent europium doped in various niobate codoped glasses

Jiwei Wang; Hongwei Song; Xianggui Kong; Hongshang Peng; Baojuan Sun; Baojiu Chen; Jiahua Zhang; Wu Xu; Haiping Xia

J. Appl. Phys. 93, 1482–1486 (2003) https://doi.org/10.1063/1.1536726

Abstract

View articletitled, Fluorescence properties of trivalent europium doped in various niobate codoped glasses

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Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots

Q. X. Pei; C. Lu; Y. Y. Wang

J. Appl. Phys. 93, 1487–1492 (2003) https://doi.org/10.1063/1.1535730

Abstract

View articletitled, Effect of elastic anisotropy on the elastic fields and vertical alignment of quantum dots

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Optical spectroscopy and frequency upconversion properties of ${Tm}^{3+}$ doped tungstate fluorophosphate glasses

Gaël Poirier; Vladimir A. Jerez; Cid B. de Araújo; Younes Messaddeq; Sidney J. L. Ribeiro; Marcel Poulain

J. Appl. Phys. 93, 1493–1497 (2003) https://doi.org/10.1063/1.1536017

Abstract

View articletitled, Optical spectroscopy and frequency upconversion properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Tm</mi><mrow><mtext>3+</mtext></mrow></msup></math> doped tungstate fluorophosphate glasses

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Interface stability during the growth of ${Al}_{2} O_{3}$ films on Si(001)

Manisha Kundu; Noriyuki Miyata; Masakazu Ichikawa

J. Appl. Phys. 93, 1498–1504 (2003) https://doi.org/10.1063/1.1534909

Abstract

View articletitled, Interface stability during the growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> films on Si(001)

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Recalescence after bulk solidification in germanium films melted by ns laser pulses

J. Armengol; F. Vega; N. Chaoui; J. Solis; C. N. Afonso

J. Appl. Phys. 93, 1505–1510 (2003) https://doi.org/10.1063/1.1534374

Abstract

View articletitled, Recalescence after bulk solidification in germanium films melted by ns laser pulses

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Preparation of different BeTe surface reconstructions by decapping and thermal treatment

J. W. Wagner; V. Wagner; L. Hansen; G. Schmidt; J. Geurts; P. Vogt; N. Esser; W. Richter

J. Appl. Phys. 93, 1511–1514 (2003) https://doi.org/10.1063/1.1532932

Abstract

View articletitled, Preparation of different BeTe surface reconstructions by decapping and thermal treatment

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Hardness and Young’s modulus of high-quality cubic boron nitride films grown by chemical vapor deposition

X. Jiang; J. Philip; W. J. Zhang; P. Hess; S. Matsumoto

J. Appl. Phys. 93, 1515–1519 (2003) https://doi.org/10.1063/1.1534625

Abstract

View articletitled, Hardness and Young’s modulus of high-quality cubic boron nitride films grown by chemical vapor deposition

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Formation of face-centered-cubic titanium by mechanical attrition

I. Manna; P. P. Chattopadhyay; P. Nandi; F. Banhart; H.-J. Fecht

J. Appl. Phys. 93, 1520–1524 (2003) https://doi.org/10.1063/1.1530718

Abstract

View articletitled, Formation of face-centered-cubic titanium by mechanical attrition

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Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction–diffusion kinetics

M. L. Zhang; N. H. March; A. Peeters; C. Van Alsenoy; I. Howard; D. Lamoen; F. Leys

J. Appl. Phys. 93, 1525–1532 (2003) https://doi.org/10.1063/1.1535230

Abstract

View articletitled, Loss rate of a plasticizer in a nylon matrix calculated using macroscopic reaction–diffusion kinetics

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Strong enhancement of the photoluminescence efficiency from InAs quantum dots

Q. X. Zhao; M. Willander; S. M. Wang; Y. Q. Wei; M. Sadeghi; J. H. Yang

J. Appl. Phys. 93, 1533–1536 (2003) https://doi.org/10.1063/1.1527706

Abstract

View articletitled, Strong enhancement of the photoluminescence efficiency from InAs quantum dots

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Constitutive modeling of fracture waves

A. D. Resnyansky; E. I. Romensky; N. K. Bourne

J. Appl. Phys. 93, 1537–1545 (2003) https://doi.org/10.1063/1.1534382

Abstract

View articletitled, Constitutive modeling of fracture waves

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Diluted magnetic semiconductor of p-type GaN epilayers implanted with ${Mn}^{+}$ ions

Yoon Shon; Young Hae Kwon; Sh. U. Yuldashev; Y. S. Park; D. J. Fu; D. Y. Kim; H. S. Kim; T. W. Kang

J. Appl. Phys. 93, 1546–1549 (2003) https://doi.org/10.1063/1.1536735

Abstract

View articletitled, Diluted magnetic semiconductor of p-type GaN epilayers implanted with <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>+</mi></mrow></msup></math> ions

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Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

E. Monroy; B. Daudin; E. Bellet-Amalric; N. Gogneau; D. Jalabert; F. Enjalbert; J. Brault; J. Barjon; Le Si Dang

J. Appl. Phys. 93, 1550–1556 (2003) https://doi.org/10.1063/1.1535734

Abstract

View articletitled, Surfactant effect of In for AlGaN growth by plasma-assisted molecular beam epitaxy

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Cohesive failure of thin layers of soft model adhesives under tension

Didi Derks; Anke Lindner; Costantino Creton; Daniel Bonn

J. Appl. Phys. 93, 1557–1566 (2003) https://doi.org/10.1063/1.1533095

Abstract

View articletitled, Cohesive failure of thin layers of soft model adhesives under tension

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Use of harmonics for femtosecond micromachining in pure dielectrics

N. Bityurin; A. Kuznetsov

J. Appl. Phys. 93, 1567–1576 (2003) https://doi.org/10.1063/1.1536023

Abstract

View articletitled, Use of harmonics for femtosecond micromachining in pure dielectrics

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Cubic polytype inclusions in 4H–SiC

Hisaomi Iwata; Ulf Lindefelt; Sven Öberg; Patrick R. Briddon

J. Appl. Phys. 93, 1577–1585 (2003) https://doi.org/10.1063/1.1534376

Abstract

View articletitled, Cubic polytype inclusions in 4H–SiC

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Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities

Takeya Unuma; Masahiro Yoshita; Takeshi Noda; Hiroyuki Sakaki; Hidefumi Akiyama

J. Appl. Phys. 93, 1586–1597 (2003) https://doi.org/10.1063/1.1535733

Abstract

View articletitled, Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing

Pietro P. Altermatt; Andreas Schenk; Frank Geelhaar; Gernot Heiser

J. Appl. Phys. 93, 1598–1604 (2003) https://doi.org/10.1063/1.1529297

Abstract

View articletitled, Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing

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Thin films of double perovskite ${Sr}_{2} {FeMoO}_{6} :$ Growth, optimization, and study of the physical and magnetotransport properties of films grown on single-crystalline and polycrystalline ${SrTiO}_{3}$ substrates

S. R. Shinde; S. B. Ogale; R. L. Greene; T. Venkatesan; Ken Tsoi; S.-W. Cheong; A. J. Millis

J. Appl. Phys. 93, 1605–1612 (2003) https://doi.org/10.1063/1.1533831

Abstract

View articletitled, Thin films of double perovskite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">FeMoO</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">:</mi></math> Growth, optimization, and study of the physical and magnetotransport properties of films grown on single-crystalline and polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> substrates

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Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of ${CCl}_{3} Br$ and quantitative analysis of the compensation mechanism in the epilayers

S. Bhunia; K. Uchida; S. Nozaki; N. Sugiyama; M. Furiya; H. Morisaki

J. Appl. Phys. 93, 1613–1619 (2003) https://doi.org/10.1063/1.1534377

Abstract

View articletitled, Metal organic vapor phase epitaxial growth of heavily carbon-doped GaAs using a dopant source of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CCl</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">Br</mi></math> and quantitative analysis of the compensation mechanism in the epilayers

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Wave-packet oscillations in a strongly driven InAs quantum well

H. Cruz

J. Appl. Phys. 93, 1620–1623 (2003) https://doi.org/10.1063/1.1534891

Abstract

View articletitled, Wave-packet oscillations in a strongly driven InAs quantum well

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Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

Satoshi Masuda; Ken Kitamura; Yoshihiro Okumura; Shigehiro Miyatake; Hitoshi Tabata; Tomoji Kawai

J. Appl. Phys. 93, 1624–1630 (2003) https://doi.org/10.1063/1.1534627

Abstract

View articletitled, Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

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Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

B. Jogai

J. Appl. Phys. 93, 1631–1635 (2003) https://doi.org/10.1063/1.1530729

Abstract

View articletitled, Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors

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The influence of mechanical rubbing on the field-effect mobility in polyhexylthiophene

H. Heil; T. Finnberg; N. von Malm; R. Schmechel; H. von Seggern

J. Appl. Phys. 93, 1636–1641 (2003) https://doi.org/10.1063/1.1530720

Abstract

View articletitled, The influence of mechanical rubbing on the field-effect mobility in polyhexylthiophene

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Temperature dependence of Stokes shift in ${In}_{x} {Ga}_{1−x} N$ epitaxial layers

Chiharu Sasaki; Hiroyoshi Naito; Masaki Iwata; Hiromitsu Kudo; Yoichi Yamada; Tsunemasa Taguchi; Takahide Jyouichi; Hiroaki Okagawa; Kazuyuki Tadatomo; Hiroyuki Tanaka

J. Appl. Phys. 93, 1642–1646 (2003) https://doi.org/10.1063/1.1533093

Abstract

View articletitled, Temperature dependence of Stokes shift in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> epitaxial layers

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Impact ionization and field-enhanced trapping: Fitting current density curves for semi-insulating GaAs

H. A. Albuquerque; A. G. de Oliveira; G. M. Ribeiro; R. L. da Silva; W. N. Rodrigues; M. V. B. Moreira; R. M. Rubinger

J. Appl. Phys. 93, 1647–1650 (2003) https://doi.org/10.1063/1.1534892

Abstract

View articletitled, Impact ionization and field-enhanced trapping: Fitting current density curves for semi-insulating GaAs

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Multisubband transport of the two-dimensional electron gas in ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures

Z. W. Zheng; B. Shen; C. P. Jiang; Y. S. Gui; T. Someya; R. Zhang; Y. Shi; Y. D. Zheng; S. L. Guo; J. H. Chu; Y. Arakawa

J. Appl. Phys. 93, 1651–1655 (2003) https://doi.org/10.1063/1.1536720

Abstract

View articletitled, Multisubband transport of the two-dimensional electron gas in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math> heterostructures

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Dependence of the electron minority carrier lifetime on interstitial oxygen and substitutional carbon in pseudomorphically strained SiGeC heterostructures

M. S. Carroll; C. A. King

J. Appl. Phys. 93, 1656–1660 (2003) https://doi.org/10.1063/1.1536025

Abstract

View articletitled, Dependence of the electron minority carrier lifetime on interstitial oxygen and substitutional carbon in pseudomorphically strained SiGeC heterostructures

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Effect of Pt buffer layer on structural and magnetic properties of FePt thin films

J. S. Chen; Yingfan Xu; J. P. Wang

J. Appl. Phys. 93, 1661–1665 (2003) https://doi.org/10.1063/1.1531817

Abstract

View articletitled, Effect of Pt buffer layer on structural and magnetic properties of FePt thin films

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Microstructural evolutions in converting epitaxial ${Tl}_{2} {Ba}_{2} {CaCu}_{2} O_{x}$ thin films to epitaxial ${HgBa}_{2} {CaCu}_{2} O_{6+δ}$ thin films

S. L. Yan; L. Fang; T. Aytug; Y. Y. Xie; J. Z. Wu; M. P. Siegal

J. Appl. Phys. 93, 1666–1671 (2003) https://doi.org/10.1063/1.1529305

Abstract

View articletitled, Microstructural evolutions in converting epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Tl</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi>x</mi></mrow></msub></math> thin films to epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">HgBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">CaCu</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>6+δ</mtext></mrow></msub></math> thin films

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Ideal magnetocaloric effect for active magnetic regenerators

A. M. Rowe; J. A. Barclay

J. Appl. Phys. 93, 1672–1676 (2003) https://doi.org/10.1063/1.1536016

Abstract

View articletitled, Ideal magnetocaloric effect for active magnetic regenerators

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Role of structural anisotropy in electrodynamics of single domain textured crystals

V. V. Aleksandrov; L. M. Fisher; A. V. Kalinov; I. F. Voloshin; G. Fuchs; G. Krabbes; V. A. Yampol’skii

J. Appl. Phys. 93, 1677–1683 (2003) https://doi.org/10.1063/1.1533832

Abstract

View articletitled, Role of structural anisotropy in electrodynamics of single domain textured crystals

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Dielectric permittivity of ${SiO}_{2}$ thin films in dependence on the ambient hydrogen pressure

Stephan Holten; Herbert Kliem

J. Appl. Phys. 93, 1684–1690 (2003) https://doi.org/10.1063/1.1532939

Abstract

View articletitled, Dielectric permittivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> thin films in dependence on the ambient hydrogen pressure

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Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

Theodosia Gougousi; M. Jason Kelly; David B. Terry; Gregory N. Parsons

J. Appl. Phys. 93, 1691–1696 (2003) https://doi.org/10.1063/1.1531818

Abstract

View articletitled, Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon

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Dielectric properties of ${Li}_{3} {VO}_{4}$ single crystals grown by the Czochralski method

Dong Jin Kim; Byeong Eog Jun; Chung-Sik Kim; Hyung Kook Kim; Jung Nam Kim; Yoon-Hwae Hwang

J. Appl. Phys. 93, 1697–1700 (2003) https://doi.org/10.1063/1.1530363

Abstract

View articletitled, Dielectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Li</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">VO</mi><mrow><mn>4</mn></mrow></msub></math> single crystals grown by the Czochralski method

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Features of diffuse phase transition in lead barium niobate ferroelectric ceramics

Ivair A. Santos; Ducinei Garcia; José A. Eiras; Vera L. Arantes

J. Appl. Phys. 93, 1701–1706 (2003) https://doi.org/10.1063/1.1530366

Abstract

View articletitled, Features of diffuse phase transition in lead barium niobate ferroelectric ceramics

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Ferroelectric properties of lanthanide-substituted ${Bi}_{4} {Ti}_{3} O_{12}$ epitaxial thin films grown by metalorganic chemical vapor deposition

Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo; Keisuke Saito; Minoru Osada; Masato Kakihana

J. Appl. Phys. 93, 1707–1712 (2003) https://doi.org/10.1063/1.1536010

Abstract

View articletitled, Ferroelectric properties of lanthanide-substituted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> epitaxial thin films grown by metalorganic chemical vapor deposition

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Preparation of ${Pb(Zr,Ti)O}_{3}$ thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory

S. R. Gilbert; S. Hunter; D. Ritchey; C. Chi; D. V. Taylor; J. Amano; S. Aggarwal; T. S. Moise; T. Sakoda; S. R. Summerfelt; K. K. Singh; C. Kazemi; D. Carl; B. Bierman

J. Appl. Phys. 93, 1713–1717 (2003) https://doi.org/10.1063/1.1534380

Abstract

View articletitled, Preparation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr,Ti)O</mi><mrow><mn>3</mn></mrow></msub></math> thin films by metalorganic chemical vapor deposition for low voltage ferroelectric memory

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Radio frequency magnetron sputtering deposition of hetero-epitaxial strontium barium niobate thin films $({Sr}_{x} {Ba}_{1−x} {Nb}_{2} O_{6})$

M. Cuniot-Ponsard; J. M. Desvignes; B. Ea-Kim; E. Leroy

J. Appl. Phys. 93, 1718–1724 (2003) https://doi.org/10.1063/1.1535749

Abstract

View articletitled, Radio frequency magnetron sputtering deposition of hetero-epitaxial strontium barium niobate thin films <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>6</mn></mrow></msub><mi xmlns="">)</mi></math>

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Thickness dependence of leakage current behavior in epitaxial $(Ba,Sr) {TiO}_{3}$ film capacitors

Kun Ho Ahn; Sang Sub Kim; Sunggi Baik

J. Appl. Phys. 93, 1725–1730 (2003) https://doi.org/10.1063/1.1535750

Abstract

View articletitled, Thickness dependence of leakage current behavior in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Ba,Sr</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> film capacitors

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Phase transitional studies of polycrystalline ${Pb}_{0.4} {Sr}_{0.6} {TiO}_{3}$ films using Raman scattering

V. M. Naik; D. Haddad; R. Naik; J. Mantese; N. W. Schubring; A. L. Micheli; G. W. Auner

J. Appl. Phys. 93, 1731–1734 (2003) https://doi.org/10.1063/1.1534626

Abstract

View articletitled, Phase transitional studies of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mtext>0.4</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.6</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> films using Raman scattering

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Reversible and irreversible polarization processes in ferroelectric ceramics and thin films

D. Bolten; U. Böttger; R. Waser

J. Appl. Phys. 93, 1735–1742 (2003) https://doi.org/10.1063/1.1535748

Abstract

View articletitled, Reversible and irreversible polarization processes in ferroelectric ceramics and thin films

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Polarization recovery of fatigued $Pb (Zr,Ti) O_{3}$ thin films: Switching current studies

Lawrence F. Schloss; Paul C. McIntyre

J. Appl. Phys. 93, 1743–1747 (2003) https://doi.org/10.1063/1.1536019

Abstract

View articletitled, Polarization recovery of fatigued <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Zr,Ti</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films: Switching current studies

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NANOSCALE SCIENCE AND DESIGN

Crystallization behavior of amorphous Fe–P strengthened with embedded carbon nanotubes

Bingqing Wei; Yubao Li; Philipp Kohler-Redlich; Reinhard Lück; SiShen Xie

J. Appl. Phys. 93, 1748–1752 (2003) https://doi.org/10.1063/1.1535239

Abstract

View articletitled, Crystallization behavior of amorphous Fe–P strengthened with embedded carbon nanotubes

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Influence of surface states on the photoluminescence from silicon nanostructures

Md. N. Islam; Satyendra Kumar

J. Appl. Phys. 93, 1753–1759 (2003) https://doi.org/10.1063/1.1535254

Abstract

View articletitled, Influence of surface states on the photoluminescence from silicon nanostructures

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Micro-Raman and infrared properties of ${SnO}_{2}$ nanobelts synthesized from Sn and ${SiO}_{2}$ powders

X. S. Peng; L. D. Zhang; G. W. Meng; Y. T. Tian; Y. Lin; B. Y. Geng; S. H. Sun

J. Appl. Phys. 93, 1760–1763 (2003) https://doi.org/10.1063/1.1534903

Abstract

View articletitled, Micro-Raman and infrared properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SnO</mi><mrow><mn>2</mn></mrow></msub></math> nanobelts synthesized from Sn and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> powders

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High open-circuit voltage photovoltaic devices from carbon-nanotube-polymer composites

E. Kymakis; I. Alexandrou; G. A. J. Amaratunga

J. Appl. Phys. 93, 1764–1768 (2003) https://doi.org/10.1063/1.1535231

Abstract

View articletitled, High open-circuit voltage photovoltaic devices from carbon-nanotube-polymer composites

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Orientation of single-walled carbon nanotubes by uniaxial pressure

N. Bendiab; R. Almairac; J.-L. Sauvajol; S. Rols; E. Elkaim

J. Appl. Phys. 93, 1769–1773 (2003) https://doi.org/10.1063/1.1534905

Abstract

View articletitled, Orientation of single-walled carbon nanotubes by uniaxial pressure

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Effect of structural parameter on field emission properties of semiconducting copper sulphide nanowire films

Jun Chen; S. Z. Deng; J. C. She; N. S. Xu; Weixin Zhang; Xiaogang Wen; Shihe Yang

J. Appl. Phys. 93, 1774–1777 (2003) https://doi.org/10.1063/1.1536739

Abstract

View articletitled, Effect of structural parameter on field emission properties of semiconducting copper sulphide nanowire films

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DEVICE PHYSICS (PACS 85)

Role of halogens in the mechanism of sensitization of uncooled PbSe infrared photodetectors

M. C. Torquemada; M. T. Rodrigo; G. Vergara; F. J. Sánchez; R. Almazán; M. Verdú; P. Rodrı́guez; V. Villamayor; L. J. Gómez; M. T. Montojo; A. Muñoz

J. Appl. Phys. 93, 1778–1784 (2003) https://doi.org/10.1063/1.1534907

Abstract

View articletitled, Role of halogens in the mechanism of sensitization of uncooled PbSe infrared photodetectors

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Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials

Alfred Grill

J. Appl. Phys. 93, 1785–1790 (2003) https://doi.org/10.1063/1.1534628

Abstract

View articletitled, Plasma enhanced chemical vapor deposited SiCOH dielectrics: from low-k to extreme low-k interconnect materials

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Laser shadowgraph measurements of electromagnetically-driven cylindrical shock-wave implosions in water

G. Rodriguez; J. P. Roberts; J. A. Echave; A. J. Taylor

J. Appl. Phys. 93, 1791–1797 (2003) https://doi.org/10.1063/1.1535253

Abstract

View articletitled, Laser shadowgraph measurements of electromagnetically-driven cylindrical shock-wave implosions in water

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Large area multiturn superfluid phase slip gyroscope

Niels Bruckner; Richard Packard

J. Appl. Phys. 93, 1798–1805 (2003) https://doi.org/10.1063/1.1536727

Abstract

View articletitled, Large area multiturn superfluid phase slip gyroscope

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Constitutive response of passivated copper films to thermal cycling

Y.-L. Shen; U. Ramamurty

J. Appl. Phys. 93, 1806–1812 (2003) https://doi.org/10.1063/1.1535731

Abstract

View articletitled, Constitutive response of passivated copper films to thermal cycling

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Refinement of the ruby luminescence pressure scale

Wilfried B. Holzapfel

J. Appl. Phys. 93, 1813–1818 (2003) https://doi.org/10.1063/1.1525856

Abstract

View articletitled, Refinement of the ruby luminescence pressure scale

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Emission of neutral Mg from single crystal MgO during abrasion with diamond

Myoung-Won Kim; S. C. Langford; J. T. Dickinson

J. Appl. Phys. 93, 1819–1825 (2003) https://doi.org/10.1063/1.1532937

Abstract

View articletitled, Emission of neutral Mg from single crystal MgO during abrasion with diamond

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Molecular dynamics simulations of ${CH}_{3}$ sticking on carbon surfaces

P. Träskelin; E. Salonen; K. Nordlund; A. V. Krasheninnikov; J. Keinonen; C. H. Wu

J. Appl. Phys. 93, 1826–1831 (2003) https://doi.org/10.1063/1.1536012

Abstract

View articletitled, Molecular dynamics simulations of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>3</mn></mrow></msub></math> sticking on carbon surfaces

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Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

D. Skarlatos; C. Tsamis; D. Tsoukalas

J. Appl. Phys. 93, 1832–1838 (2003) https://doi.org/10.1063/1.1535260

Abstract

View articletitled, Oxidation of nitrogen-implanted silicon: Energy dependence of oxide growth and defect characterization of the silicon substrate

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Near-ground detection of atmospheric γ rays associated with lightning

M. B. Greenfield; A. T. Domondon; S. Tsuchiya; K. Kubo; Y. Ikeda; M. Tomiyama

J. Appl. Phys. 93, 1839–1844 (2003) https://doi.org/10.1063/1.1536731

Abstract

View articletitled, Near-ground detection of atmospheric γ rays associated with lightning

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COMMUNICATIONS

Magnetic-field effects in defect-controlled ferromagnetic ${Ga}_{1−x} {Mn}_{x} As$ semiconductors

Raimundo R. dos Santos; José d’Albuquerque e Castro; Luiz E. Oliveira

J. Appl. Phys. 93, 1845–1847 (2003) https://doi.org/10.1063/1.1534622

Abstract

View articletitled, Magnetic-field effects in defect-controlled ferromagnetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> semiconductors

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Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers

F. Rinner; J. Rogg; M. T. Kelemen; M. Mikulla; G. Weimann; J. W. Tomm; E. Thamm; R. Poprawe

J. Appl. Phys. 93, 1848–1850 (2003) https://doi.org/10.1063/1.1531839

Abstract

View articletitled, Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers

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Giant Hall effect in ${Fe}_{x} {Sn}_{100−x}$ granular alloy films

Jun Gao; Fei Wang; Xiaolong Jiang; Gang Ni; Fengming Zhang; Youwei Du

J. Appl. Phys. 93, 1851–1853 (2003) https://doi.org/10.1063/1.1536719

Abstract

View articletitled, Giant Hall effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mtext>100−x</mtext></mrow></msub></math> granular alloy films

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Issues

APPLIED PHYSICS REVIEWS—FOCUSED REVIEW

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

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