Skip Nav Destination

Issues

Select Decade

Select Year

Issue

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Dynamics of a twisted nematic cell using a convergent beam system

L. Z. Ruan; J. R. Sambles

J. Appl. Phys. 92, 4857–4862 (2002) https://doi.org/10.1063/1.1509847

Abstract

View articletitled, Dynamics of a twisted nematic cell using a convergent beam system

Open the PDF for in another window

Charge transport due to photoelectric interface activation in pure nematic liquid-crystal cells

P. Pagliusi; G. Cipparrone

J. Appl. Phys. 92, 4863–4869 (2002) https://doi.org/10.1063/1.1511273

Abstract

View articletitled, Charge transport due to photoelectric interface activation in pure nematic liquid-crystal cells

Open the PDF for in another window

Spectral features of a pulsed ${CO}_{2}$ laser

Jerzy S. Witkowski; Edward F. Plinski; Tomasz Kalicinski; Bartosz W. Majewski; Tomasz Plawecki; Krzysztof M. Abramski

J. Appl. Phys. 92, 4870–4873 (2002) https://doi.org/10.1063/1.1506004

Abstract

View articletitled, Spectral features of a pulsed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO</mi><mrow><mn>2</mn></mrow></msub></math> laser

Open the PDF for in another window

Low threshold distributed feedback lasers fabricated from blends of conjugated polymers: Reduced losses through Förster transfer

R. Gupta; M. Stevenson; A. J. Heeger

J. Appl. Phys. 92, 4874–4877 (2002) https://doi.org/10.1063/1.1505668

Abstract

View articletitled, Low threshold distributed feedback lasers fabricated from blends of conjugated polymers: Reduced losses through Förster transfer

Open the PDF for in another window

Theory of surface-plasmon resonance optical-field enhancement at prolate spheroids

Nils Calander; Magnus Willander

J. Appl. Phys. 92, 4878–4884 (2002) https://doi.org/10.1063/1.1512315

Abstract

View articletitled, Theory of surface-plasmon resonance optical-field enhancement at prolate spheroids

Open the PDF for in another window

Structural and optical properties of rare-earth-doped $Y_{2} O_{3}$ waveguides grown by pulsed-laser deposition

Olivier Pons-Y-Moll; Jacques Perriere; Eric Millon; Reine Marie Defourneau; Daniel Defourneau; Brice Vincent; Abdel Essahlaoui; Azzedine Boudrioua; Wilfrid Seiler

J. Appl. Phys. 92, 4885–4890 (2002) https://doi.org/10.1063/1.1508422

Abstract

View articletitled, Structural and optical properties of rare-earth-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> waveguides grown by pulsed-laser deposition

Open the PDF for in another window

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Shock front formation at vacuum arc anodes

E. Gidalevich; S. Goldsmith; R. L. Boxman

J. Appl. Phys. 92, 4891–4896 (2002) https://doi.org/10.1063/1.1511271

Abstract

View articletitled, Shock front formation at vacuum arc anodes

Open the PDF for in another window

Cell geometry designs for efficient plasma display panels

G. Veronis; U. S. Inan

J. Appl. Phys. 92, 4897–4905 (2002) https://doi.org/10.1063/1.1511272

Abstract

View articletitled, Cell geometry designs for efficient plasma display panels

Open the PDF for in another window

Effects of segmented electrode in Hall current plasma thrusters

Y. Raitses; M. Keidar; D. Staack; N. J. Fisch

J. Appl. Phys. 92, 4906–4911 (2002) https://doi.org/10.1063/1.1510556

Abstract

View articletitled, Effects of segmented electrode in Hall current plasma thrusters

Open the PDF for in another window

Combined effects of argon addition and substrate bias on the formation of nanocrystalline diamond films by chemical vapor deposition

Tien-Syh Yang; Jir-Yon Lai; Ming-Show Wong; Chia-Liang Cheng

J. Appl. Phys. 92, 4912–4917 (2002) https://doi.org/10.1063/1.1512320

Abstract

View articletitled, Combined effects of argon addition and substrate bias on the formation of nanocrystalline diamond films by chemical vapor deposition

Open the PDF for in another window

Plasma and ablation dynamics in ultrafast laser processing of crystalline silicon

Tae Y. Choi; Costas P. Grigoropoulos

J. Appl. Phys. 92, 4918–4925 (2002) https://doi.org/10.1063/1.1510565

Abstract

View articletitled, Plasma and ablation dynamics in ultrafast laser processing of crystalline silicon

Open the PDF for in another window

Experimental study and simulation of space charge stimulated discharge

M. D. Noskov; A. S. Malinovski; C. M. Cooke; K. A. Wright; A. J. Schwab

J. Appl. Phys. 92, 4926–4934 (2002) https://doi.org/10.1063/1.1506395

Abstract

View articletitled, Experimental study and simulation of space charge stimulated discharge

Open the PDF for in another window

Diagnostics and two-dimensional simulation of low-frequency inductively coupled plasmas with neutral gas heating and electron heat fluxes

K. N. Ostrikov; I. B. Denysenko; E. L. Tsakadze; S. Xu; R. G. Storer

J. Appl. Phys. 92, 4935–4946 (2002) https://doi.org/10.1063/1.1510598

Abstract

View articletitled, Diagnostics and two-dimensional simulation of low-frequency inductively coupled plasmas with neutral gas heating and electron heat fluxes

Open the PDF for in another window

Investigation of Ne IX and Ne X line emission from dense plasma using Ross-filter systems

E. Kroupp; A. Starobinets; E. Klodzh; Yu. V. Ralchenko; Y. Maron; I. N. Bogatu; A. Fisher

J. Appl. Phys. 92, 4947–4951 (2002) https://doi.org/10.1063/1.1512316

Abstract

View articletitled, Investigation of Ne IX and Ne X line emission from dense plasma using Ross-filter systems

Open the PDF for in another window

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Optimization of the silicon oxide layer thicknesses inserted in the Mo/Si multilayer interfaces for high heat stability and high reflectivity

M. Ishino; O. Yoda

J. Appl. Phys. 92, 4952–4958 (2002) https://doi.org/10.1063/1.1510566

Abstract

View articletitled, Optimization of the silicon oxide layer thicknesses inserted in the Mo/Si multilayer interfaces for high heat stability and high reflectivity

Open the PDF for in another window

Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

M. E. Gueunier; J. P. Kleider; R. Brüggemann; S. Lebib; P. Roca i Cabarrocas; R. Meaudre; B. Canut

J. Appl. Phys. 92, 4959–4967 (2002) https://doi.org/10.1063/1.1508429

Abstract

View articletitled, Properties of polymorphous silicon–germanium alloys deposited under high hydrogen dilution and at high pressure

Open the PDF for in another window

Transient creep in free-standing thin polycrystalline aluminum films

A. J. Kalkman; A. H. Verbruggen; G. C. A. M. Janssen; S. Radelaar

J. Appl. Phys. 92, 4968–4975 (2002) https://doi.org/10.1063/1.1509099

Abstract

View articletitled, Transient creep in free-standing thin polycrystalline aluminum films

Open the PDF for in another window

Far-infrared laser-induced hot-carrier impact ionization photovoltaic effect in silicon junctions: Lattice temperature dependence

F. Encinas-Sanz; M. Marı́n; J. M. Guerra

J. Appl. Phys. 92, 4976–4979 (2002) https://doi.org/10.1063/1.1510560

Abstract

View articletitled, Far-infrared laser-induced hot-carrier impact ionization photovoltaic effect in silicon junctions: Lattice temperature dependence

Open the PDF for in another window

Growth and structure of fullerene-like ${CN}_{x}$ thin films produced by pulsed laser ablation of graphite in nitrogen

A. A. Voevodin; J. G. Jones; J. S. Zabinski; Zs. Czigány; L. Hultman

J. Appl. Phys. 92, 4980–4988 (2002) https://doi.org/10.1063/1.1509106

Abstract

View articletitled, Growth and structure of fullerene-like <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> thin films produced by pulsed laser ablation of graphite in nitrogen

Open the PDF for in another window

Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; N. Y. Pashkova; G. T. Thaler; M. E. Overberg; R. Frazier; C. R. Abernathy; S. J. Pearton; Jihyun Kim; F. Ren

J. Appl. Phys. 92, 4989–4993 (2002) https://doi.org/10.1063/1.1510597

Abstract

View articletitled, Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

Open the PDF for in another window

Thermal conductivity of ${AlAs}_{0.07} {Sb}_{0.93}$ and ${Al}_{0.9} {Ga}_{0.1} {As}_{0.07} {Sb}_{0.93}$ alloys and $(AlAs)_{1} /(AlSb)_{11}$ digital-alloy superlattices

T. Borca-Tasciuc; D. W. Song; J. R. Meyer; I. Vurgaftman; M.-J. Yang; B. Z. Nosho; L. J. Whitman; H. Lee; R. U. Martinelli; G. W. Turner; M. J. Manfra; G. Chen

J. Appl. Phys. 92, 4994–4998 (2002) https://doi.org/10.1063/1.1506194

Abstract

View articletitled, Thermal conductivity of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AlAs</mi><mrow><mtext>0.07</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mtext>0.93</mtext></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.9</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.1</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mtext>0.07</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mtext>0.93</mtext></mrow></msub></math> alloys and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">AlAs</mi><msub xmlns=""><mi>)</mi><mrow><mn>1</mn></mrow></msub><mi xmlns="">/(</mi><mi mathvariant="normal" xmlns="">AlSb</mi><msub xmlns=""><mi>)</mi><mrow><mn>11</mn></mrow></msub></math> digital-alloy superlattices

Open the PDF for in another window

Texture formation in sputter-deposited $({Nb}_{0.7}, {Ti}_{0.3}) N$ thin films

N. N. Iosad; N. M. van der Pers; S. Grachev; V. V. Roddatis; B. D. Jackson; S. N. Polyakov; P. N. Dmitriev; T. M. Klapwijk

J. Appl. Phys. 92, 4999–5005 (2002) https://doi.org/10.1063/1.1510589

Abstract

View articletitled, Texture formation in sputter-deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>0.7</mtext></mrow></msub><mi xmlns="">,</mi><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.3</mtext></mrow></msub><mi xmlns="">)</mi><mi mathvariant="normal" xmlns="">N</mi></math> thin films

Open the PDF for in another window

Magnetic properties and martensitic transformation in quaternary Heusler alloy of NiMnFeGa

Z. H. Liu; M. Zhang; W. Q. Wang; W. H. Wang; J. L. Chen; G. H. Wu; F. B. Meng; H. Y. Liu; B. D. Liu; J. P. Qu; Y. X. Li

J. Appl. Phys. 92, 5006–5010 (2002) https://doi.org/10.1063/1.1511293

Abstract

View articletitled, Magnetic properties and martensitic transformation in quaternary Heusler alloy of NiMnFeGa

Open the PDF for in another window

Texture of ${TiSi}_{2}$ thin films on Si (001)

A. S. Özcan; K. F. Ludwig, Jr.; P. Rebbi; C. Lavoie; C. Cabral, Jr.; J. M. E. Harper

J. Appl. Phys. 92, 5011–5018 (2002) https://doi.org/10.1063/1.1509849

Abstract

View articletitled, Texture of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mn>2</mn></mrow></msub></math> thin films on Si (001)

Open the PDF for in another window

Model for assessing the melting on Hugoniots of metals: Al, Pb, Cu, Mo, Fe, and U

Chengda Dai; Hua Tan; Huayun Geng

J. Appl. Phys. 92, 5019–5026 (2002) https://doi.org/10.1063/1.1510561

Abstract

View articletitled, Model for assessing the melting on Hugoniots of metals: Al, Pb, Cu, Mo, Fe, and U

Open the PDF for in another window

Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

D. B. Aubertine; M. A. Mander; N. Ozguven; A. F. Marshall; P. C. McIntyre; J. O. Chu; P. M. Mooney

J. Appl. Phys. 92, 5027–5035 (2002) https://doi.org/10.1063/1.1508424

Abstract

View articletitled, Observation and modeling of the initial fast interdiffusion regime in Si/SiGe multilayers

Open the PDF for in another window

Ionic and electronic processes in quartz:Mechanisms of thermoluminescence and optically stimulated luminescence

N. Itoh; D. Stoneham; A. M. Stoneham

J. Appl. Phys. 92, 5036–5044 (2002) https://doi.org/10.1063/1.1510951

Abstract

View articletitled, Ionic and electronic processes in quartz:Mechanisms of thermoluminescence and optically stimulated luminescence

Open the PDF for in another window

Transformation of shock compression pulses in glass due to the failure wave phenomena

G. I. Kanel; A. A. Bogatch; S. V. Razorenov; Zhen Chen

J. Appl. Phys. 92, 5045–5052 (2002) https://doi.org/10.1063/1.1510947

Abstract

View articletitled, Transformation of shock compression pulses in glass due to the failure wave phenomena

Open the PDF for in another window

Parameter analysis and optimization for the radiative cooling effect due to negative luminescence

V. I. Pipa; A. I. Liptuga

J. Appl. Phys. 92, 5053–5059 (2002) https://doi.org/10.1063/1.1509104

Abstract

View articletitled, Parameter analysis and optimization for the radiative cooling effect due to negative luminescence

Open the PDF for in another window

Raman measurement and optical properties of $Nd:Gd {Ca}_{4} O ({BO}_{3})_{3}$ crystals

H. R. Xia; W. Q. Zheng; S. J. Zhang; Z. X. Cheng; X. F. Cheng; Z. H. Yang

J. Appl. Phys. 92, 5060–5067 (2002) https://doi.org/10.1063/1.1510956

Abstract

View articletitled, Raman measurement and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Nd:Gd</mi><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">BO</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>3</mn></mrow></msub></math> crystals

Open the PDF for in another window

Growth of ${CrSi}_{2}$ by radiation enhanced diffusion at room temperature

J. M. Shannon; J. D. Hoyland; E. G. Gerstner

J. Appl. Phys. 92, 5068–5071 (2002) https://doi.org/10.1063/1.1512968

Abstract

View articletitled, Growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CrSi</mi><mrow><mn>2</mn></mrow></msub></math> by radiation enhanced diffusion at room temperature

Open the PDF for in another window

Microcathodoluminescence spectroscopy of defects in ${Bi}_{2} O_{3}$ -doped ZnO grains

X. L. Sun; L. J. Brillson; Y.-M. Chiang; J. Luo

J. Appl. Phys. 92, 5072–5076 (2002) https://doi.org/10.1063/1.1512688

Abstract

View articletitled, Microcathodoluminescence spectroscopy of defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>-doped ZnO grains

Open the PDF for in another window

Functionalization of graphite, glassy carbon, and polymer surfaces with highly oxidized sulfur species by plasma treatments

M. Collaud Coen; B. Keller; P. Groening; L. Schlapbach

J. Appl. Phys. 92, 5077–5083 (2002) https://doi.org/10.1063/1.1510170

Abstract

View articletitled, Functionalization of graphite, glassy carbon, and polymer surfaces with highly oxidized sulfur species by plasma treatments

Open the PDF for in another window

Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions

C.-S. Shin; D. Gall; Y.-W. Kim; N. Hellgren; I. Petrov; J. E. Greene

J. Appl. Phys. 92, 5084–5093 (2002) https://doi.org/10.1063/1.1510558

Abstract

View articletitled, Development of preferred orientation in polycrystalline NaCl-structure δ-TaN layers grown by reactive magnetron sputtering: Role of low-energy ion surface interactions

Open the PDF for in another window

Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

H. Kim; P. C. McIntyre

J. Appl. Phys. 92, 5094–5102 (2002) https://doi.org/10.1063/1.1510590

Abstract

View articletitled, Spinodal decomposition in amorphous metal–silicate thin films: Phase diagram analysis and interface effects on kinetics

Open the PDF for in another window

Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy

W. Maw; F. Stevens; S. C. Langford; J. T. Dickinson

J. Appl. Phys. 92, 5103–5109 (2002) https://doi.org/10.1063/1.1510595

Abstract

View articletitled, Single asperity tribochemical wear of silicon nitride studied by atomic force microscopy

Open the PDF for in another window

Heat capacity of the n-InSe single crystal layered semiconductor

A. I. Dmitriev; G. V. Lashkarev; A. A. Baida; Z. D. Kovalyuk; A. Szewczyk; K. Piotrowski; M. Gutowska

J. Appl. Phys. 92, 5110–5112 (2002) https://doi.org/10.1063/1.1512322

Abstract

View articletitled, Heat capacity of the n-InSe single crystal layered semiconductor

Open the PDF for in another window

Localized mixed acoustic modes in superlattices with structural defects

Xue-Hua Wang; Ke-Qiu Chen; Ben-Yuan Gu

J. Appl. Phys. 92, 5113–5118 (2002) https://doi.org/10.1063/1.1513204

Abstract

View articletitled, Localized mixed acoustic modes in superlattices with structural defects

Open the PDF for in another window

Formation of ${Mo}_{5} {Si}_{3}$ phase in Mo/Si multilayers

A. K. Srivastava; Pragya Tripathi; M. Nayak; G. S. Lodha; R. V. Nandedkar

J. Appl. Phys. 92, 5119–5126 (2002) https://doi.org/10.1063/1.1512971

Abstract

View articletitled, Formation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mo</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mn>3</mn></mrow></msub></math> phase in Mo/Si multilayers

Open the PDF for in another window

Spectra and energy levels of ${Tb}^{3+} {(4f}^{8})$ in GaN

John B. Gruber; Bahram Zandi; H. J. Lozykowski; W. M. Jadwisienczak

J. Appl. Phys. 92, 5127–5132 (2002) https://doi.org/10.1063/1.1511294

Abstract

View articletitled, Spectra and energy levels of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Tb</mi><mrow><mtext>3+</mtext></mrow></msup><msup xmlns=""><mtext>(4f </mtext><mrow><mn>8</mn></mrow></msup><mi xmlns="">)</mi></math> in GaN

Open the PDF for in another window

Reflection high-energy electron diffraction analysis of polycrystalline films with grain size and orientation distributions

J. W. Hartman; R. T. Brewer; Harry A. Atwater

J. Appl. Phys. 92, 5133–5139 (2002) https://doi.org/10.1063/1.1510954

Abstract

View articletitled, Reflection high-energy electron diffraction analysis of polycrystalline films with grain size and orientation distributions

Open the PDF for in another window

Kinematics of mechanical and adhesional micromanipulation under a scanning electron microscope

Shigeki Saito; Hideki T. Miyazaki; Tomomasa Sato; Kunio Takahashi

J. Appl. Phys. 92, 5140–5149 (2002) https://doi.org/10.1063/1.1512313

Abstract

View articletitled, Kinematics of mechanical and adhesional micromanipulation under a scanning electron microscope

Open the PDF for in another window

Bonding characterization, density measurement, and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films

S. Chattopadhyay; L. C. Chen; S. C. Chien; S. T. Lin; K. H. Chen

J. Appl. Phys. 92, 5150–5158 (2002) https://doi.org/10.1063/1.1512966

Abstract

View articletitled, Bonding characterization, density measurement, and thermal diffusivity studies of amorphous silicon carbon nitride and boron carbon nitride thin films

Open the PDF for in another window

Removal versus ablation in KrF dry laser cleaning of polystyrene particles from silicon

Sergey I. Kudryashov; Susan D. Allen

J. Appl. Phys. 92, 5159–5162 (2002) https://doi.org/10.1063/1.1503854

Abstract

View articletitled, Removal versus ablation in KrF dry laser cleaning of polystyrene particles from silicon

Open the PDF for in another window

Highly efficient green up-conversion luminescence of ${Nd}^{3+} - {Yb}^{3+} - {Ho}^{3+}$ codoped fluorite-type nanocrystals in transparent glass ceramics

Jianbei Qiu; Yoji Kawamoto; Junjie Zhang

J. Appl. Phys. 92, 5163–5168 (2002) https://doi.org/10.1063/1.1508423

Abstract

View articletitled, Highly efficient green up-conversion luminescence of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">–</mi><msup xmlns=""><mi mathvariant="normal">Yb</mi><mrow><mtext>3+</mtext></mrow></msup><mi xmlns="">–</mi><msup xmlns=""><mi mathvariant="normal">Ho</mi><mrow><mtext>3+</mtext></mrow></msup></math> codoped fluorite-type nanocrystals in transparent glass ceramics

Open the PDF for in another window

Studies of photoreflectance spectra in ${Cd}_{1−x} {Mn}_{x} Te/CdTe$ superlattices with high compositions

Chenjia Chen; Xuezhong Wang; Xiaogan Liang; S. Tavazzi; A. Borghesi; A. Sassella; V. Bellani; M. Geddo; A. Stella

J. Appl. Phys. 92, 5169–5172 (2002) https://doi.org/10.1063/1.1502924

Abstract

View articletitled, Studies of photoreflectance spectra in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te/CdTe</mi></math> superlattices with high compositions

Open the PDF for in another window

Ultrathin oxide interfaces on 6H–SiC formed by plasma hydrogenation: Ultra shallow depth profile study

Xianning Xie; Kian Ping Loh

J. Appl. Phys. 92, 5173–5176 (2002) https://doi.org/10.1063/1.1509100

Abstract

View articletitled, Ultrathin oxide interfaces on 6H–SiC formed by plasma hydrogenation: Ultra shallow depth profile study

Open the PDF for in another window

Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

R. Gago; I. Jiménez; F. Agulló-Rueda; J. M Albella; Zs. Czigány; L. Hultman

J. Appl. Phys. 92, 5177–5182 (2002) https://doi.org/10.1063/1.1512317

Abstract

View articletitled, Transition from amorphous boron carbide to hexagonal boron carbon nitride thin films induced by nitrogen ion assistance

Open the PDF for in another window

Raman characterization and stress analysis of AlN grown on SiC by sublimation

L. Liu; B. Liu; J. H. Edgar; S. Rajasingam; M. Kuball

J. Appl. Phys. 92, 5183–5188 (2002) https://doi.org/10.1063/1.1506195

Abstract

View articletitled, Raman characterization and stress analysis of AlN grown on SiC by sublimation

Open the PDF for in another window

Nucleation and growth kinetics of preferred C54 ${TiSi}_{2}$ orientations: time-resolved x-ray diffraction measurements

A. S. Özcan; K. F. Ludwig, Jr.; C. Lavoie; C. Cabral, Jr.; J. M. E. Harper; R. M. Bradley

J. Appl. Phys. 92, 5189–5195 (2002) https://doi.org/10.1063/1.1512687

Abstract

View articletitled, Nucleation and growth kinetics of preferred C54 <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiSi</mi><mrow><mn>2</mn></mrow></msub></math> orientations: time-resolved x-ray diffraction measurements

Open the PDF for in another window

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

Jung-Hoon Rhew; Mark S. Lundstrom

J. Appl. Phys. 92, 5196–5202 (2002) https://doi.org/10.1063/1.1509098

Abstract

View articletitled, Drift-diffusion equation for ballistic transport in nanoscale metal-oxide-semiconductor field effect transistors

Open the PDF for in another window

Low-energy electron transmission through organic monolayers: An estimation of the effective monolayer potential by an excess electron interference

Hiroyuki Yamane; Kazuyuki Ito; Satoshi Kera; Koji K. Okudaira; Nobuo Ueno

J. Appl. Phys. 92, 5203–5207 (2002) https://doi.org/10.1063/1.1509848

Abstract

View articletitled, Low-energy electron transmission through organic monolayers: An estimation of the effective monolayer potential by an excess electron interference

Open the PDF for in another window

Photoresponse of the conductivity in functionalized pentacene compounds

T. Tokumoto; J. S. Brooks; R. Clinite; X. Wei; J. E. Anthony; D. L. Eaton; S. R. Parkin

J. Appl. Phys. 92, 5208–5213 (2002) https://doi.org/10.1063/1.1510164

Abstract

View articletitled, Photoresponse of the conductivity in functionalized pentacene compounds

Open the PDF for in another window

Hall coefficients and resistivities of ${Bi}_{2+x} {Sr}_{2−x} {CuO}_{y}$ single crystals: The presence of a mobility edge in correlated two-dimensional electron system

Katsuhiko Inagaki; Satoshi Tanda

J. Appl. Phys. 92, 5214–5217 (2002) https://doi.org/10.1063/1.1509842

Abstract

View articletitled, Hall coefficients and resistivities of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mtext>2+x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>2−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">CuO</mi><mrow><mi>y</mi></mrow></msub></math> single crystals: The presence of a mobility edge in correlated two-dimensional electron system

Open the PDF for in another window

High-transparency Ni/Au bilayer contacts to n-type GaN

Abhishek Motayed; Albert V. Davydov; Leonid A. Bendersky; Mark C. Wood; Michael A. Derenge; Dong Feng Wang; Kenneth A. Jones; S. Noor Mohammad

J. Appl. Phys. 92, 5218–5227 (2002) https://doi.org/10.1063/1.1509109

Abstract

View articletitled, High-transparency Ni/Au bilayer contacts to n-type GaN

Open the PDF for in another window

Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

S. Matsumoto; K. Hisamitsu; M. Tanaka; H. Ueno; M. Miura-Mattausch; H. J. Mattausch; S. Kumashiro; T. Yamaguchi; S. Odanaka; N. Nakayama

J. Appl. Phys. 92, 5228–5232 (2002) https://doi.org/10.1063/1.1510957

Abstract

View articletitled, Validity of mobility universality for scaled metal–oxide–semiconductor field-effect transistors down to 100 nm gate length

Open the PDF for in another window

Ultrafast nonlinear response of high density carriers at silicon surface detected by simultaneous measurements of transient reflecting first and second order diffractions

K. Katayama; Y. Inagaki; T. Sawada

J. Appl. Phys. 92, 5233–5237 (2002) https://doi.org/10.1063/1.1510952

Abstract

View articletitled, Ultrafast nonlinear response of high density carriers at silicon surface detected by simultaneous measurements of transient reflecting first and second order diffractions

Open the PDF for in another window

Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; Z-Q. Fang; D. C. Look; S. S. Park; J. H. Han

J. Appl. Phys. 92, 5238–5240 (2002) https://doi.org/10.1063/1.1511822

Abstract

View articletitled, Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy

Open the PDF for in another window

Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; Z.-Q. Fang; D. C. Look; S. S. Park; J. H. Han

J. Appl. Phys. 92, 5241–5247 (2002) https://doi.org/10.1063/1.1511823

Abstract

View articletitled, Deep electron and hole traps in freestanding n-GaN grown by hydride vapor phase epitaxy

Open the PDF for in another window

Luminescence of pulsed laser deposited ${Gd}_{2} O_{3} : {Eu}^{3+}$ thin film phosphors on quartz glass substrates

Soo Yeon Seo; Seonghoon Lee; Hee Dong Park; Namsoo Shin; Kee-Sun Sohn

J. Appl. Phys. 92, 5248–5251 (2002) https://doi.org/10.1063/1.1511277

Abstract

View articletitled, Luminescence of pulsed laser deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Eu</mi><mrow><mtext>3+</mtext></mrow></msup></math> thin film phosphors on quartz glass substrates

Open the PDF for in another window

High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells

M. A. Gad; J. H. Evans-Freeman

J. Appl. Phys. 92, 5252–5258 (2002) https://doi.org/10.1063/1.1511824

Abstract

View articletitled, High resolution minority carrier transient spectroscopy of Si/SiGe/Si quantum wells

Open the PDF for in another window

High-mobility polymer gate dielectric pentacene thin film transistors

Hagen Klauk; Marcus Halik; Ute Zschieschang; Günter Schmid; Wolfgang Radlik; Werner Weber

J. Appl. Phys. 92, 5259–5263 (2002) https://doi.org/10.1063/1.1511826

Abstract

View articletitled, High-mobility polymer gate dielectric pentacene thin film transistors

Open the PDF for in another window

Preparation and characterization of surface plasmon resonance tunable gold and silver films

R. Gupta; M. J. Dyer; W. A. Weimer

J. Appl. Phys. 92, 5264–5271 (2002) https://doi.org/10.1063/1.1511275

Abstract

View articletitled, Preparation and characterization of surface plasmon resonance tunable gold and silver films

Open the PDF for in another window

Electron holography study of active interfaces in zinc oxide varistor materials

Mattias Elfwing; Eva Olsson

J. Appl. Phys. 92, 5272–5280 (2002) https://doi.org/10.1063/1.1511270

Abstract

View articletitled, Electron holography study of active interfaces in zinc oxide varistor materials

Open the PDF for in another window

Tunneling magnetoresistance in granular composites

Sheng Ju; Zhen-Ya Li

J. Appl. Phys. 92, 5281–5285 (2002) https://doi.org/10.1063/1.1510569

Abstract

View articletitled, Tunneling magnetoresistance in granular composites

Open the PDF for in another window

Monte Carlo simulation of electron transport in narrow gap heterostructures

Jean-Luc Thobel; Olivier Bonno; François Dessenne; Hervé Boutry

J. Appl. Phys. 92, 5286–5295 (2002) https://doi.org/10.1063/1.1511820

Abstract

View articletitled, Monte Carlo simulation of electron transport in narrow gap heterostructures

Open the PDF for in another window

Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells

F. M. S. Lima; A. L. A. Fonseca; O. A. C. Nunes; Q. Fanyao

J. Appl. Phys. 92, 5296–5303 (2002) https://doi.org/10.1063/1.1511276

Abstract

View articletitled, Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells

Open the PDF for in another window

Magnetotransport in variable-coupling one-dimensional ballistic constrictions

Stefano Roddaro; Vincenzo Piazza; Fabio Beltram; Werner Wegscheider; Chi-Te Liang; Michael Pepper

J. Appl. Phys. 92, 5304–5309 (2002) https://doi.org/10.1063/1.1513189

Abstract

View articletitled, Magnetotransport in variable-coupling one-dimensional ballistic constrictions

Open the PDF for in another window

Field-dependent mobility from space-charge-limited current–voltage curves

Dario Natali; Marco Sampietro

J. Appl. Phys. 92, 5310–5318 (2002) https://doi.org/10.1063/1.1511825

Abstract

View articletitled, Field-dependent mobility from space-charge-limited current–voltage curves

Open the PDF for in another window

Transport and structural properties of binary skutterudite ${CoSb}_{3}$ thin films grown by dc magnetron sputtering technique

V. Savchuk; A. Boulouz; S. Chakraborty; J. Schumann; H. Vinzelberg

J. Appl. Phys. 92, 5319–5326 (2002) https://doi.org/10.1063/1.1513188

Abstract

View articletitled, Transport and structural properties of binary skutterudite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CoSb</mi><mrow><mn>3</mn></mrow></msub></math> thin films grown by dc magnetron sputtering technique

Open the PDF for in another window

Photoelectrical properties of sprayed ${In}_{2−2x} {Al}_{2x} S_{3−3y} O_{3y}$ alloys

L. Bhira; S. Belgacem; J. C. Bernède

J. Appl. Phys. 92, 5327–5330 (2002) https://doi.org/10.1063/1.1512685

Abstract

View articletitled, Photoelectrical properties of sprayed <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>2−2x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>2x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mtext>3−3y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>3y</mtext></mrow></msub></math> alloys

Open the PDF for in another window

Temperature dependence of the Seebeck coefficient and the potential barrier scattering of n-type PbTe films prepared on heated glass substrates by rf sputtering

Kengo Kishimoto; Masayoshi Tsukamoto; Tsuyoshi Koyanagi

J. Appl. Phys. 92, 5331–5339 (2002) https://doi.org/10.1063/1.1512964

Abstract

View articletitled, Temperature dependence of the Seebeck coefficient and the potential barrier scattering of n-type PbTe films prepared on heated glass substrates by rf sputtering

Open the PDF for in another window

Electrical and electro-optical investigations of liquid crystal cells containing TiO₂–V₂O₅ thin films prepared by sol–gel synthesis

V. Bruno; E. Cazzanelli; N. Scaramuzza; G. Strangi; R. Ceccato; G. Carturan

J. Appl. Phys. 92, 5340–5346 (2002) https://doi.org/10.1063/1.1513872

Abstract

View articletitled, Electrical and electro-optical investigations of liquid crystal cells containing TiO2–V2O5 thin films prepared by sol–gel synthesis

Open the PDF for in another window

Theory of surface noise under Coulomb correlations between carriers and surface states

V. A. Kochelap; V. N. Sokolov; O. M. Bulashenko; J. M. Rubı́

J. Appl. Phys. 92, 5347–5358 (2002) https://doi.org/10.1063/1.1512698

Abstract

View articletitled, Theory of surface noise under Coulomb correlations between carriers and surface states

Open the PDF for in another window

Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis

Phuong Hoa Nguyen; Karl R. Hofmann; Gernot Paasch

J. Appl. Phys. 92, 5359–5370 (2002) https://doi.org/10.1063/1.1510948

Abstract

View articletitled, Full-band Monte Carlo model with screened pseudopotential based phonon scattering rates for a lattice with basis

Open the PDF for in another window

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Influence of ordering on the magnetostriction of Fe–27.5 at. % Ga alloys

N. Srisukhumbowornchai; S. Guruswamy

J. Appl. Phys. 92, 5371–5379 (2002) https://doi.org/10.1063/1.1508426

Abstract

View articletitled, Influence of ordering on the magnetostriction of Fe–27.5 at. % Ga alloys

Open the PDF for in another window

Structural and magnetic characterization of Fe nanoparticles synthesized by chemical vapor condensation process

X. L. Dong; C. J. Choi; B. K. Kim

J. Appl. Phys. 92, 5380–5385 (2002) https://doi.org/10.1063/1.1510168

Abstract

View articletitled, Structural and magnetic characterization of Fe nanoparticles synthesized by chemical vapor condensation process

Open the PDF for in another window

Elemental distribution at the interfaces of NiMn/Co multilayers by x-ray anomalous scattering

G. M. Luo; H. W. Jiang; J. W. Cai; C. X. Liu; Z. H. Mai; W. Y. Lai; J. Wang; Y. F. Ding

J. Appl. Phys. 92, 5386–5390 (2002) https://doi.org/10.1063/1.1510594

Abstract

View articletitled, Elemental distribution at the interfaces of NiMn/Co multilayers by x-ray anomalous scattering

Open the PDF for in another window

Insulator–metal transition and magnetoresistance of ${La}_{0.5} {Ca}_{0.5} {MnO}_{y}$ induced by tuning the oxygen content

Y. G. Zhao; W. Cai; J. Zhao; X. P. Zhang; R. Fan; B. S. Cao; M. H. Zhu; Tom Wu; S. B. Ogale; S. R. Shinde; T. Venkatesan; Q. Y. Tu; T. K. Mandal; J. Gopalakrishnan

J. Appl. Phys. 92, 5391–5394 (2002) https://doi.org/10.1063/1.1509108

Abstract

View articletitled, Insulator–metal transition and magnetoresistance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi>y</mi></mrow></msub></math> induced by tuning the oxygen content

Open the PDF for in another window

Multilayer nanogranular magnetic thin films for GHz applications

Kenji Ikeda; Kazuyoshi Kobayashi; Masayuki Fujimoto

J. Appl. Phys. 92, 5395–5400 (2002) https://doi.org/10.1063/1.1510562

Abstract

View articletitled, Multilayer nanogranular magnetic thin films for GHz applications

Open the PDF for in another window

Application of plasma resonance condition for prediction of large Kerr effects

A. De; A. Puri

J. Appl. Phys. 92, 5401–5408 (2002) https://doi.org/10.1063/1.1507816

Abstract

View articletitled, Application of plasma resonance condition for prediction of large Kerr effects

Open the PDF for in another window

Magnetization reversal in half-metallic epitaxial ${CrO}_{2}$ films

I. L. Siu; W. F. Egelhoff, Jr.; David X. Yang; Harsh Deep Chopra

J. Appl. Phys. 92, 5409–5412 (2002) https://doi.org/10.1063/1.1510568

Abstract

View articletitled, Magnetization reversal in half-metallic epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mn>2</mn></mrow></msub></math> films

Open the PDF for in another window

Magnetic and electrical properties of Mn-doped p-type $β- {FeSi}_{2}$ single crystals

E. Arushanov; L. Ivanenko; H. Vinzelberg; D. Eckert; G. Behr; U. K. Rößler; K.-H. Müller; C. M. Schneider; J. Schumann

J. Appl. Phys. 92, 5413–5419 (2002) https://doi.org/10.1063/1.1511274

Abstract

View articletitled, Magnetic and electrical properties of Mn-doped p-type <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mn>2</mn></mrow></msub></math> single crystals

Open the PDF for in another window

DIELECTRICS AND FERROELECTRICITY (PACS 77)

La-doped effect on the ferroelectric properties of ${Bi}_{4} {Ti}_{3} O_{12} - {SrBi}_{4} {Ti}_{4} O_{15}$ thin film fabricated by pulsed laser deposition

J. S. Zhu; D. Su; X. M. Lu; H. X. Qin; Y. N. Wang; D. Y. Wang; H. L. W. Chan; K. H. Wong; C. L. Choy

J. Appl. Phys. 92, 5420–5424 (2002) https://doi.org/10.1063/1.1510557

Abstract

View articletitled, La-doped effect on the ferroelectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>15</mn></mrow></msub></math> thin film fabricated by pulsed laser deposition

Open the PDF for in another window

A model of phase transition induced antiphase boundaries in perovskite and layered perovskite oxides

Y. Ding; D. D. Liang

J. Appl. Phys. 92, 5425–5428 (2002) https://doi.org/10.1063/1.1510563

Abstract

View articletitled, A model of phase transition induced antiphase boundaries in perovskite and layered perovskite oxides

Open the PDF for in another window

Ferroelectric and ferrimagnetic iron-doped thin-film ${BaTiO}_{3} :$ Influence of iron on physical properties

R. Maier; J. L. Cohn

J. Appl. Phys. 92, 5429–5436 (2002) https://doi.org/10.1063/1.1510591

Abstract

View articletitled, Ferroelectric and ferrimagnetic iron-doped thin-film <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi></math> Influence of iron on physical properties

Open the PDF for in another window

Effect of (Mn, F) and (Mg, F) co-doping on dielectric and piezoelectric properties of lead zirconate titanate ceramics

E. Boucher; D. Guyomar; L. Lebrun; B. Guiffard; G. Grange

J. Appl. Phys. 92, 5437–5442 (2002) https://doi.org/10.1063/1.1499526

Abstract

View articletitled, Effect of (Mn, F) and (Mg, F) co-doping on dielectric and piezoelectric properties of lead zirconate titanate ceramics

Open the PDF for in another window

Characteristics of ${ZrO}_{2}$ gate dielectric deposited using Zr t–butoxide and $Zr ({NEt}_{2})_{4}$ precursors by plasma enhanced atomic layer deposition method

Yangdo Kim; Jaehyoung Koo; Jiwoong Han; Sungwoo Choi; Hyeongtag Jeon; Chan-Gyung Park

J. Appl. Phys. 92, 5443–5447 (2002) https://doi.org/10.1063/1.1513196

Abstract

View articletitled, Characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mn>2</mn></mrow></msub></math> gate dielectric deposited using Zr t–butoxide and <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Zr</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">NEt</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>4</mn></mrow></msub></math> precursors by plasma enhanced atomic layer deposition method

Open the PDF for in another window

Comparison of crystal structure and electrical properties of tetragonal and rhombohedral ${Pb(Zr,Ti)O}_{3}$ films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

Hiroshi Funakubo; Kouji Tokita; Takahiro Oikawa; Masanori Aratani; Keisuke Saito

J. Appl. Phys. 92, 5448–5452 (2002) https://doi.org/10.1063/1.1510169

Abstract

View articletitled, Comparison of crystal structure and electrical properties of tetragonal and rhombohedral <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr,Ti)O</mi><mrow><mn>3</mn></mrow></msub></math> films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

Open the PDF for in another window

NANOSCALE SCIENCE AND DESIGN

Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice

Kwang Moo Kim; Young Ju Park; Young Min Park; Chan Kyeong Hyon; Eun Kyu Kim; Jung Ho Park

J. Appl. Phys. 92, 5453–5456 (2002) https://doi.org/10.1063/1.1511821

Abstract

View articletitled, Alignment of InAs quantum dots on a controllable strain-relaxed substrate using an InAs/GaAs superlattice

Open the PDF for in another window

Ex situ spectroscopic ellipsometry and Raman spectroscopy investigations of chemical vapor deposited sulfur incorporated nanocrystalline carbon thin films

S. Gupta; B. R. Weiner; G. Morell

J. Appl. Phys. 92, 5457–5462 (2002) https://doi.org/10.1063/1.1511269

Abstract

View articletitled, Ex situ spectroscopic ellipsometry and Raman spectroscopy investigations of chemical vapor deposited sulfur incorporated nanocrystalline carbon thin films

Open the PDF for in another window

Single domain and vortex state in ferromagnetic circular nanodots

H. Hoffmann; F. Steinbauer

J. Appl. Phys. 92, 5463–5467 (2002) https://doi.org/10.1063/1.1510559

Abstract

View articletitled, Single domain and vortex state in ferromagnetic circular nanodots

Open the PDF for in another window

Nanoscale modifications of chalcogenide glasses using scanning tunneling microscopes

Masataka Ohto; Keiji Tanaka

J. Appl. Phys. 92, 5468–5473 (2002) https://doi.org/10.1063/1.1513887

Abstract

View articletitled, Nanoscale modifications of chalcogenide glasses using scanning tunneling microscopes

Open the PDF for in another window

Effect of reactant and product melting on self-propagating reactions in multilayer foils

Etienne Besnoin; Stefano Cerutti; Omar M. Knio; Timothy P. Weihs

J. Appl. Phys. 92, 5474–5481 (2002) https://doi.org/10.1063/1.1509840

Abstract

View articletitled, Effect of reactant and product melting on self-propagating reactions in multilayer foils

Open the PDF for in another window

Influence of cluster-assembly parameters on the field emission properties of nanostructured carbon films

C. Ducati; E. Barborini; P. Piseri; P. Milani; J. Robertson

J. Appl. Phys. 92, 5482–5489 (2002) https://doi.org/10.1063/1.1512969

Abstract

View articletitled, Influence of cluster-assembly parameters on the field emission properties of nanostructured carbon films

Open the PDF for in another window

Formation processes of CdTe quantum dots on ZnTe substrates studied by reflection high-energy electron diffraction and photoluminescence

K. Godo; J. H. Chang; H. Makino; T. Takai; T. Hanada; T. Yao; T. Sasao; T. Goto

J. Appl. Phys. 92, 5490–5493 (2002) https://doi.org/10.1063/1.1513888

Abstract

View articletitled, Formation processes of CdTe quantum dots on ZnTe substrates studied by reflection high-energy electron diffraction and photoluminescence

Open the PDF for in another window

Surface superconductivity and structural analysis of ${YC}_{2}$ single crystals encapsulated in carbon nanocages

Y. Yosida

J. Appl. Phys. 92, 5494–5497 (2002) https://doi.org/10.1063/1.1510946

Abstract

View articletitled, Surface superconductivity and structural analysis of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YC</mi><mrow><mn>2</mn></mrow></msub></math> single crystals encapsulated in carbon nanocages

Open the PDF for in another window

DEVICE PHYSICS (PACS 85)

Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

P. B. Klein

J. Appl. Phys. 92, 5498–5502 (2002) https://doi.org/10.1063/1.1510564

Abstract

View articletitled, Photoionization spectroscopy in AlGaN/GaN high electron mobility transistors

Open the PDF for in another window

Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study

Yayoi Takamura; Arturas Vailionis; Ann F. Marshall; Peter B. Griffin; James D. Plummer

J. Appl. Phys. 92, 5503–5507 (2002) https://doi.org/10.1063/1.1510953

Abstract

View articletitled, Dopant deactivation in heavily Sb doped Si (001): A high-resolution x-ray diffraction and transmission electron microscopy study

Open the PDF for in another window

Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films

A. Kohn; M. Eizenberg; Y. Shacham-Diamand

J. Appl. Phys. 92, 5508–5511 (2002) https://doi.org/10.1063/1.1512321

Abstract

View articletitled, Improved diffusion barriers for copper metallization obtained by passivation of grain boundaries in electroless deposited cobalt-based films

Open the PDF for in another window

Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

Soo-Hyun Kim; Ki Tae Nam; Arindom Datta; Ki-Bum Kim

J. Appl. Phys. 92, 5512–5519 (2002) https://doi.org/10.1063/1.1509102

Abstract

View articletitled, Failure mechanism of a multilayer (TiN/Al/TiN) diffusion barrier between copper and silicon

Open the PDF for in another window

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Late-stage kinetics of laser-induced photochemical deposition in liquid solutions

Emmanuel Hugonnot; Xavier Müller; Jean-Pierre Delville

J. Appl. Phys. 92, 5520–5524 (2002) https://doi.org/10.1063/1.1509845

Abstract

View articletitled, Late-stage kinetics of laser-induced photochemical deposition in liquid solutions

Open the PDF for in another window

Characterization of fine particle trapping in a plasma-enhanced chemical vapor deposition reactor

Heru Setyawan; Manabu Shimada; Kikuo Okuyama

J. Appl. Phys. 92, 5525–5531 (2002) https://doi.org/10.1063/1.1501755

Abstract

View articletitled, Characterization of fine particle trapping in a plasma-enhanced chemical vapor deposition reactor

Open the PDF for in another window

Analysis of an eddy-current brake considering finite radius and induced magnetic flux

Kapjin Lee; Kyihwan Park

J. Appl. Phys. 92, 5532–5538 (2002) https://doi.org/10.1063/1.1510593

Abstract

View articletitled, Analysis of an eddy-current brake considering finite radius and induced magnetic flux

Open the PDF for in another window

Size determination of field-induced water menisci in noncontact atomic force microscopy

Montserrat Calleja; Marta Tello; Ricardo Garcı́a

J. Appl. Phys. 92, 5539–5542 (2002) https://doi.org/10.1063/1.1510171

Abstract

View articletitled, Size determination of field-induced water menisci in noncontact atomic force microscopy

Open the PDF for in another window

Effect of time dependent concentration gradients on electrochemical atomic force microscopy measurements

L. Stappers; J. Fransaer

J. Appl. Phys. 92, 5543–5549 (2002) https://doi.org/10.1063/1.1511806

Abstract

View articletitled, Effect of time dependent concentration gradients on electrochemical atomic force microscopy measurements

Open the PDF for in another window

Microwave emission due to hypervelocity impacts and its correlation with mechanical destruction

T. Takano; Y. Murotani; K. Maki; T. Toda; A. Fujiwara; S. Hasegawa; A. Yamori; H. Yano

J. Appl. Phys. 92, 5550–5554 (2002) https://doi.org/10.1063/1.1513885

Abstract

View articletitled, Microwave emission due to hypervelocity impacts and its correlation with mechanical destruction

Open the PDF for in another window

${YSi}_{2−x}$ formation in the presence of interfacial ${SiO}_{2}$ layer

M.-H. Cho; D.-H. Ko; Y. G. Choi; I. W. Lyo; K. Jeong; C. N. Whang

J. Appl. Phys. 92, 5555–5559 (2002) https://doi.org/10.1063/1.1512323

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YSi</mi><mrow><mtext>2−x</mtext></mrow></msub></math> formation in the presence of interfacial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> layer

Open the PDF for in another window

Forward coupling phenomena between artificial left-handed transmission lines

Lei Liu; Christophe Caloz; Chin-Chang Chang; Tatsuo Itoh

J. Appl. Phys. 92, 5560–5565 (2002) https://doi.org/10.1063/1.1512682

Abstract

View articletitled, Forward coupling phenomena between artificial left-handed transmission lines

Open the PDF for in another window

COMMUNICATIONS

Hyper-Rapid thermal defect annealing during grinding of ZnO powders

M. G. Kakazey; M. Vlasova; M. Dominguez-Patiño; G. Dominguez-Patiño; G. Gonzalez-Rodriguez; B. Salazar-Hernandez

J. Appl. Phys. 92, 5566–5568 (2002) https://doi.org/10.1063/1.1510588

Abstract

View articletitled, Hyper-Rapid thermal defect annealing during grinding of ZnO powders

Open the PDF for in another window

Beneficial effect of nonmagnetic Y on magnetic properties due to the enhancement of exchange coupling in nanocomposite $(Nd,Y)_{2} {Fe}_{14} B /α– Fe$ magnets

M. Zhang; Z. D. Zhang; X. K. Sun; W. Liu; D. Y. Geng; X. M. Jin; C. Y. You; X. G. Zhao

J. Appl. Phys. 92, 5569–5571 (2002) https://doi.org/10.1063/1.1509865

Abstract

View articletitled, Beneficial effect of nonmagnetic Y on magnetic properties due to the enhancement of exchange coupling in nanocomposite <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Nd,Y</mi><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>14</mn></mrow></msub><mi mathvariant="normal" xmlns="">B</mi><mi xmlns="">/α–</mi><mi mathvariant="normal" xmlns="">Fe</mi></math> magnets

Open the PDF for in another window

Influence of temperature and electronic disorder on the Raman spectra of nickel cobalt oxides

Charles F. Windisch, Jr.; Gregory J. Exarhos; Shiv K. Sharma

J. Appl. Phys. 92, 5572–5574 (2002) https://doi.org/10.1063/1.1509838

Abstract

View articletitled, Influence of temperature and electronic disorder on the Raman spectra of nickel cobalt oxides

Open the PDF for in another window

Space-charge-limited bipolar currents in $polymer / C_{60}$ diodes

M. Koehler; L. S. Roman; O. Inganäs; M. G. E. da Luz

J. Appl. Phys. 92, 5575–5577 (2002) https://doi.org/10.1063/1.1509839

Abstract

View articletitled, Space-charge-limited bipolar currents in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">polymer</mi><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>60</mn></mrow></msub></math> diodes

Open the PDF for in another window

Suppression of beam fanning in near-stoichiometric lithium niobate crystal by ultraviolet light irradiation

Youwen Liu; Ramasamy Jayavel; Masura Nakamura; Kenji Kitamura; Takashi Yamaji; Hideki Hatano

J. Appl. Phys. 92, 5578–5580 (2002) https://doi.org/10.1063/1.1512310

Abstract

View articletitled, Suppression of beam fanning in near-stoichiometric lithium niobate crystal by ultraviolet light irradiation

Open the PDF for in another window

Output features of vacuum laser acceleration

N. Cao; Y. K. Ho; P. X. Wang; J. Pang; Q. Kong; L. Shao; Q. S. Wang

J. Appl. Phys. 92, 5581–5583 (2002) https://doi.org/10.1063/1.1509867

Abstract

View articletitled, Output features of vacuum laser acceleration

Open the PDF for in another window

Massively parallel adhesion and reactivity measurements using simple and inexpensive magnetic tweezers

Fabiano Assi; Robert Jenks; Jerry Yang; Christopher Love; Mara Prentiss

J. Appl. Phys. 92, 5584–5586 (2002) https://doi.org/10.1063/1.1509086

Abstract

View articletitled, Massively parallel adhesion and reactivity measurements using simple and inexpensive magnetic tweezers

Open the PDF for in another window

Heteroepitaxial growth of $β- {LiGaO}_{2}$ thin films on ZnO

I. Ohkubo; C. Hirose; K. Tamura; J. Nishii; H. Saito; H. Koinuma; P. Ahemt; T. Chikyow; T. Ishii; S. Miyazawa; Y. Segawa; T. Fukumura; M. Kawasaki

J. Appl. Phys. 92, 5587–5589 (2002) https://doi.org/10.1063/1.1512311

Abstract

View articletitled, Heteroepitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">LiGaO</mi><mrow><mn>2</mn></mrow></msub></math> thin films on ZnO

Open the PDF for in another window

Electrical characterization of acceptor levels in Mg-doped GaN

Yoshitaka Nakano; Takashi Jimbo

J. Appl. Phys. 92, 5590–5592 (2002) https://doi.org/10.1063/1.1512681

Abstract

View articletitled, Electrical characterization of acceptor levels in Mg-doped GaN

Open the PDF for in another window

High thermal stability of AlGaAs/GaAs V-grooved quantum wire

Xing-Quan Liu; Xue-Lun Wang; Mutsuo Ogura

J. Appl. Phys. 92, 5593–5595 (2002) https://doi.org/10.1063/1.1513883

Abstract

View articletitled, High thermal stability of AlGaAs/GaAs V-grooved quantum wire

Open the PDF for in another window

Temperature dependence of free excitons in GaN

D. C. Reynolds; J. Hoelscher; C. W. Litton; T. C. Collins

J. Appl. Phys. 92, 5596–5598 (2002) https://doi.org/10.1063/1.1509866

Abstract

View articletitled, Temperature dependence of free excitons in GaN

Open the PDF for in another window

Regrowth of high-quality ${Al}_{0.3} {Ga}_{0.7} As/GaAs$ superlattices on laterally oxidized digital ${Al}_{x} {Ga}_{1−x} As$ $(x>0.80)$ alloys

G. W. Pickrell; K. L. Chang; J. H. Epple; K. C. Hsieh; K. Y. Cheng

J. Appl. Phys. 92, 5599–5601 (2002) https://doi.org/10.1063/1.1512309

Abstract

View articletitled, Regrowth of high-quality <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.7</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> superlattices on laterally oxidized digital <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x>0.80)</mtext></math> alloys

Open the PDF for in another window

Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

J. Y. Duboz; J. L. Reverchon; D. Adam; B. Damilano; N. Grandjean; F. Semond; J. Massies

J. Appl. Phys. 92, 5602–5604 (2002) https://doi.org/10.1063/1.1499741

Abstract

View articletitled, Submicron metal–semiconductor–metal ultraviolet detectors based on AlGaN grown on silicon: Results and simulation

Open the PDF for in another window

ERRATA

Publisher’s Note: “Postsintering annealing induced extrinsic dielectric and piezoelectric responses in lead–zinc–niobate-based ferroelectric ceramics” [J. Appl. Phys. 92, 2709 (2002)]

Feng Xia; Xi Yao

J. Appl. Phys. 92, 5605 (2002) https://doi.org/10.1063/1.1518030

View articletitled, Publisher’s Note: “Postsintering annealing induced extrinsic dielectric and piezoelectric responses in lead–zinc–niobate-based ferroelectric ceramics” [J. Appl. Phys. 92, 2709 (2002)]

Open the PDF for in another window

Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

RSS

Resources

Explore

pubs.aip.org

Connect with AIP Publishing

This Feature Is Available To Subscribers Only