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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Dynamic up-conversion population processes of erbium-doped pentaphosphate crystal

X. B. Chen; C. J. He; W. M. Du; Z. F. Song; M. X. Li

J. Appl. Phys. 92, 3425–3435 (2002) https://doi.org/10.1063/1.1489710

Abstract

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Intracavity second harmonic generation in the green from a diode-end-pumped ${Nd}^{3+} : {Ca}_{3} {Ga}_{2} {Ge}_{3} O_{12}$ laser garnet crystal

D. Jaque; J. J. Romero; J. Garcı́a Solé

J. Appl. Phys. 92, 3436–3441 (2002) https://doi.org/10.1063/1.1504178

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Photochemical reaction of divalent-germanium center in germanosilicate glasses under intense near-ultraviolet laser excitation: Origin of 5.7 eV band and site selective excitation of divalent-germanium center

Masahide Takahashi; Kentaro Ichii; Yomei Tokuda; Takashi Uchino; Toshinobu Yoko; Junji Nishii; Takumi Fujiwara

J. Appl. Phys. 92, 3442–3446 (2002) https://doi.org/10.1063/1.1505979

Abstract

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Light-emitting diodes based on phosphorescent guest/polymeric host systems

Kathleen M. Vaeth; C. W. Tang

J. Appl. Phys. 92, 3447–3453 (2002) https://doi.org/10.1063/1.1501748

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Chemi-ionization in neon plasma

V. A. Sheverev; V. P. Stepaniuk; G. G. Lister

J. Appl. Phys. 92, 3454–3457 (2002) https://doi.org/10.1063/1.1503173

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High resolution measurements of ion temperatures in z-pinch plasmas

E. J. Yadlowsky; F. Barakat; E. P. Carlson; R. C. Hazelton; M. Keitz; C. C. Klepper; B. H. Failor; J. S. Levine; Y. Song; B. L. Whitten; C. R. Coverdale; C. Deeney; R. B. Spielman

J. Appl. Phys. 92, 3458–3462 (2002) https://doi.org/10.1063/1.1505671

Abstract

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Langmuir probe diagnostic studies of pulsed hydrogen plasmas in planar microwave reactors

A. Rousseau; E. Teboul; N. Lang; M. Hannemann; J. Röpcke

J. Appl. Phys. 92, 3463–3471 (2002) https://doi.org/10.1063/1.1497454

Abstract

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Nonlinear transformation of electromagnetic waves in suddenly created cold magnetized plasma: Longitudinal propagation

Zoran M. Trifkovic; Bozidar V. Stanic

J. Appl. Phys. 92, 3472–3479 (2002) https://doi.org/10.1063/1.1505686

Abstract

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Influence of opacity on gain coefficients in static, and fast moving neon-like krypton plasmas

Majid Masnavi; Takashi Kikuchi; Mitsuo Nakajima; Kazuhiko Horioka

J. Appl. Phys. 92, 3480–3486 (2002) https://doi.org/10.1063/1.1505991

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Continuum model of thin film deposition incorporating finite atomic length scales

Peter L. O'Sullivan; Frieder H. Baumann; George H. Gilmer; Jacques Dalla Torre; Chan-Soo Shin; Ivan Petrov; Tae-Yoon Lee

J. Appl. Phys. 92, 3487–3494 (2002) https://doi.org/10.1063/1.1497465

Abstract

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Fluorene–fluorenone copolymer: Stable and efficient yellow-emitting material for electroluminescent devices

S. Panozzo; J-C. Vial; Y. Kervella; O. Stéphan

J. Appl. Phys. 92, 3495–3502 (2002) https://doi.org/10.1063/1.1502920

Abstract

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Micro-Raman investigation of strain in GaN and ${Al}_{x} {Ga}_{1−x} N/GaN$ heterostructures grown on Si(111)

S. Tripathy; S. J. Chua; P. Chen; Z. L. Miao

J. Appl. Phys. 92, 3503–3510 (2002) https://doi.org/10.1063/1.1502921

Abstract

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Stimulated emission due to the inelastic scattering from the heavy-hole exciton to the light-hole exciton in CuI thin films

I. Tanaka; M. Nakayama

J. Appl. Phys. 92, 3511–3516 (2002) https://doi.org/10.1063/1.1502205

Abstract

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Surface enhanced Raman spectroscopy of carbon nanotubules deposited on a silver self-affine fractal surface

Tsachi Livneh; Martin Moskovits

J. Appl. Phys. 92, 3517–3523 (2002) https://doi.org/10.1063/1.1503163

Abstract

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Effective electron mass and plasma filter characterization of n-type InGaAs and InAsP

W. K. Metzger; M. W. Wanlass; L. M. Gedvilas; J. C. Verley; J. J. Carapella; R. K. Ahrenkiel

J. Appl. Phys. 92, 3524–3529 (2002) https://doi.org/10.1063/1.1504170

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Acoustic and optical properties of $({Li}_{2} O)_{0.2−x} ({Na}_{2} O)_{x} ({TeO}_{2})_{0.8}$ glasses

P. Roychoudhury; Sudip K. Batabyal; A. Paul; C. Basu; S. Mukherjee; K. Goswami

J. Appl. Phys. 92, 3530–3539 (2002) https://doi.org/10.1063/1.1503385

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Interdiffusion studies for ${HfSi}_{x} O_{y}$ and ${ZrSi}_{x} O_{y}$ on Si

M. A. Quevedo-Lopez; M. El-Bouanani; B. E. Gnade; R. M. Wallace; M. R. Visokay; M. Douglas; M. J. Bevan; L. Colombo

J. Appl. Phys. 92, 3540–3550 (2002) https://doi.org/10.1063/1.1501752

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Refractive index profiles of ${LiB}_{3} O_{5}$ waveguides formed by MeV He ion irradiation

Ke-Ming Wang; Hui Hu; Fei Lu; Feng Chen; Bo-Rong Shi; Chang-Qin Ma; Qing-Ming Lu; Ding-Yu Shen

J. Appl. Phys. 92, 3551–3553 (2002) https://doi.org/10.1063/1.1503862

Abstract

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Ion-beam-produced damage and its stability in AlN films

S. O. Kucheyev; J. S. Williams; J. Zou; C. Jagadish; M. Pophristic; S. Guo; I. T. Ferguson; M. O. Manasreh

J. Appl. Phys. 92, 3554–3558 (2002) https://doi.org/10.1063/1.1501746

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Atomic force microscopy study of surface roughening of sputter-deposited TiN thin films

Z.-J. Liu; N. Jiang; Y. G. Shen; Y.-W. Mai

J. Appl. Phys. 92, 3559–3563 (2002) https://doi.org/10.1063/1.1504497

Abstract

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Luminescence studies of a ${Si/SiO}_{2}$ superlattice

B. Averboukh; R. Huber; K. W. Cheah; Y. R. Shen; G. G. Qin; Z. C. Ma; W. H. Zong

J. Appl. Phys. 92, 3564–3568 (2002) https://doi.org/10.1063/1.1498960

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Chemical and structural aspects of annealed ZnSe/GaAs(001) heterostructures

D. H. Mosca; W. H. Schreiner; E. M. Kakuno; I. Mazzaro; E. Silveira; V. H. Etgens; M. Eddrief; G. Zanelatto; J. C. Galzerani

J. Appl. Phys. 92, 3569–3572 (2002) https://doi.org/10.1063/1.1504175

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Longitudinal-optical-phonon-assisted energy relaxation in self-assembled CdS quantum dots embedded in ZnSe

H. Kumano; H. Yoshida; T. Tawara; I. Suemune

J. Appl. Phys. 92, 3573–3578 (2002) https://doi.org/10.1063/1.1504161

Abstract

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Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

L. Fu; J. Wong-Leung; P. N. K. Deenapanray; H. H. Tan; C. Jagadish; Bin Gong; R. N. Lamb; R. M. Cohen; W. Reichert; L. V. Dao; M. Gal

J. Appl. Phys. 92, 3579–3583 (2002) https://doi.org/10.1063/1.1503857

Abstract

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Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of ${Ge}_{x} {Sb}_{2} {Te}_{3+x}$ $(x=1,2,3)$ phase change material

B. J. Kooi; J. Th. M. De Hosson

J. Appl. Phys. 92, 3584–3590 (2002) https://doi.org/10.1063/1.1502915

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Effects of postbombardment annealing on Ti diffusion in ion prebombarded MgO(100)

M. Lu; C. Lupu; J. W. Rabalais

J. Appl. Phys. 92, 3591–3598 (2002) https://doi.org/10.1063/1.1503864

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Structural and optical properties of thin zirconium oxide films prepared by reactive direct current magnetron sputtering

S. Venkataraj; Oliver Kappertz; Hansjörg Weis; Robert Drese; R. Jayavel; Matthias Wuttig

J. Appl. Phys. 92, 3599–3607 (2002) https://doi.org/10.1063/1.1503858

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Predictive model of the optical response of amorphous ${WO}_{3}$ to ion intercalation

J. P. Lehan; P. C. Yu; D. L. Backfisch; J. P. Chambers

J. Appl. Phys. 92, 3608–3614 (2002) https://doi.org/10.1063/1.1505676

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Photoluminescence of Er in strained Si on SiGe layer

T. Ishiyama; S. Nawae; T. Komai; Y. Yamashita; Y. Kamiura; T. Hasegawa; K. Inoue; K. Okuno

J. Appl. Phys. 92, 3615–3619 (2002) https://doi.org/10.1063/1.1506391

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Magnetic entropy change and its temperature variation in compounds $La ({Fe}_{1−x} {Co}_{x})_{11.2} {Si}_{1.8}$

F. X. Hu; X. L. Qian; J. R. Sun; G. J. Wang; X. X. Zhang; Z. H. Cheng; B. G. Shen

J. Appl. Phys. 92, 3620–3623 (2002) https://doi.org/10.1063/1.1502919

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Reactive ion etching of quartz and Pyrex for microelectronic applications

D. A. Zeze; R. D. Forrest; J. D. Carey; D. C. Cox; I. D. Robertson; B. L. Weiss; S. R. P. Silva

J. Appl. Phys. 92, 3624–3629 (2002) https://doi.org/10.1063/1.1503167

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Unipolar “V-shaped” switching in chiral smectic C $(Sm - C^{*})$ liquid crystals bounded by an ion-store film

Giuseppe Strangi; Carlo Versace; Nicola Scaramuzza; Vincenzo Bruno

J. Appl. Phys. 92, 3630–3635 (2002) https://doi.org/10.1063/1.1502184

Abstract

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Optical studies of ZnS:Mn films grown by pulsed laser deposition

K. M. Yeung; W. S. Tsang; C. L. Mak; K. H. Wong

J. Appl. Phys. 92, 3636–3640 (2002) https://doi.org/10.1063/1.1503389

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Monte Carlo simulation of electron transmission through the scattering masks with angular limitation for projection electron lithography

X. Sun; Z. J. Ding; Q. R. Pu; H. M. Li; Z. Q. Wu; W. Q. Gu; K. W. Peng; G. J. Wu; F. A. Zhang; N. K. Kang

J. Appl. Phys. 92, 3641–3646 (2002) https://doi.org/10.1063/1.1505679

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Optical-transition properties of the ${Nd}^{3+}$ ion in ${Gd}_{0.8} {La}_{0.2} {VO}_{4}$ crystal

H. D. Jiang; J. Y. Wang; H. J. Zhang; X. B. Hu; H. Liu

J. Appl. Phys. 92, 3647–3650 (2002) https://doi.org/10.1063/1.1505680

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Crystallization in ${Pd}_{40} {Ni}_{40} P_{20}$ glass

J. Z. Jiang; K. Saksl; N. Nishiyama; A. Inoue

J. Appl. Phys. 92, 3651–3656 (2002) https://doi.org/10.1063/1.1505681

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Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN

Yasuo Koide; D. E. Walker, Jr.; B. D. White; L. J. Brillson; Masanori Murakami; S. Kamiyama; H. Amano; I. Akasaki

J. Appl. Phys. 92, 3657–3661 (2002) https://doi.org/10.1063/1.1505988

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Stress field effects on the microstructure and properties of a-C:H thin films

A. Golanski; F. Piazza; J. Werckmann; G. Relihan; S. Schulze

J. Appl. Phys. 92, 3662–3670 (2002) https://doi.org/10.1063/1.1506198

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Craters on silicon surfaces created by gas cluster ion impacts

L. P. Allen; Z. Insepov; D. B. Fenner; C. Santeufemio; W. Brooks; K. S. Jones; I. Yamada

J. Appl. Phys. 92, 3671–3678 (2002) https://doi.org/10.1063/1.1506422

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Ultrafast interferometric microscopy for laser-driven shock wave characterization

K. T. Gahagan; D. S. Moore; D. J. Funk; J. H. Reho; R. L. Rabie

J. Appl. Phys. 92, 3679–3682 (2002) https://doi.org/10.1063/1.1505976

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Infrared reflection characteristics in InN thin films grown by magnetron sputtering for the application of plasma filters

Z. G. Qian; W. Z. Shen; H. Ogawa; Q. X. Guo

J. Appl. Phys. 92, 3683–3687 (2002) https://doi.org/10.1063/1.1506199

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Ternary ${Co}_{x} {Fe}_{(1−x)} {Si}_{2}$ and ${Ni}_{x} {Fe}_{(1−x)} {Si}_{2}$ formed by ion implantation in silicon

Cs. Fetzer; I. Dézsi; A. Vantomme; M. F. Wu; S. Jin; H. Bender

J. Appl. Phys. 92, 3688–3693 (2002) https://doi.org/10.1063/1.1505673

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X-ray analysis of temperature induced defect structures in boron implanted silicon

M. Sztucki; T. H. Metzger; I. Kegel; A. Tilke; J. L. Rouvière; D. Lübbert; J. Arthur; J. R. Patel

J. Appl. Phys. 92, 3694–3703 (2002) https://doi.org/10.1063/1.1505982

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Elastic energy release rate of quantum islands in Stranski–Krastanow growth

B. Yang

J. Appl. Phys. 92, 3704–3710 (2002) https://doi.org/10.1063/1.1506386

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Three-dimensional spectral solution of the Schrödinger equation for arbitrary band structures

A. Trellakis; U. Ravaioli

J. Appl. Phys. 92, 3711–3716 (2002) https://doi.org/10.1063/1.1502181

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Energy band structure of strained ${Si}_{1−x} C_{x}$ alloys on Si (001) substrate

S. T. Chang; C. Y. Lin; C. W. Liu

J. Appl. Phys. 92, 3717–3723 (2002) https://doi.org/10.1063/1.1502203

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Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering

Wu-yun Quan; Dae M. Kim; Myoung Kwan Cho

J. Appl. Phys. 92, 3724–3729 (2002) https://doi.org/10.1063/1.1504173

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Simulating quantum transport in nanoscale transistors: Real versus mode-space approaches

R. Venugopal; Z. Ren; S. Datta; M. S. Lundstrom; D. Jovanovic

J. Appl. Phys. 92, 3730–3739 (2002) https://doi.org/10.1063/1.1503165

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Ohmic contact technology in III nitrides using polarization effects of cap layers

Th. Gessmann; J. W. Graff; Y.-L. Li; E. L. Waldron; E. F. Schubert

J. Appl. Phys. 92, 3740–3744 (2002) https://doi.org/10.1063/1.1504169

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Hole mobility enhancements and alloy scattering-limited mobility in tensile strained Si/SiGe surface channel metal–oxide–semiconductor field-effect transistors

C. W. Leitz; M. T. Currie; M. L. Lee; Z.-Y. Cheng; D. A. Antoniadis; E. A. Fitzgerald

J. Appl. Phys. 92, 3745–3751 (2002) https://doi.org/10.1063/1.1499213

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Trap filled limit of conducting organic materials

S. C. Jain; Ashok. K. Kapoor; Wim Geens; J. Poortmans; R. Mertens; M. Willander

J. Appl. Phys. 92, 3752–3754 (2002) https://doi.org/10.1063/1.1503863

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High resolution deep level transient spectroscopy studies of the vacancy-oxygen and related defects in ion-implanted silicon

J. H. Evans-Freeman; P. Y. Y. Kan; N. Abdelgader

J. Appl. Phys. 92, 3755–3760 (2002) https://doi.org/10.1063/1.1497721

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Cross-sectional scanning tunneling microscopy of GaAsSb/GaAs quantum well structures

S. L. Zuo; Y. G. Hong; E. T. Yu; J. F. Klem

J. Appl. Phys. 92, 3761–3770 (2002) https://doi.org/10.1063/1.1501740

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Band structure engineering of superlattice-based short-, mid-, and long-wavelength infrared avalanche photodiodes for improved impact ionization rates

K. Abu El-Rub; C. H. Grein; M. E. Flatte; H. Ehrenreich

J. Appl. Phys. 92, 3771–3777 (2002) https://doi.org/10.1063/1.1503390

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Effects of stress on electrical transport properties of nickel silicide thin layers synthesized by Ni-ion implantation

X. W. Zhang; S. P. Wong; W. Y. Cheung

J. Appl. Phys. 92, 3778–3783 (2002) https://doi.org/10.1063/1.1503409

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Examination of band bending at buckminsterfullerene $(C_{60}) /metal$ interfaces by the Kelvin probe method

N. Hayashi; H. Ishii; Y. Ouchi; K. Seki

J. Appl. Phys. 92, 3784–3793 (2002) https://doi.org/10.1063/1.1504495

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Effect of geometrical shape on magneto–Peltier and Ettingshausen cooling in Bi and ${Bi}_{0.88} {Sb}_{0.12}$ polycrystals

Osamu Yamashita; Shoichi Tomiyoshi

J. Appl. Phys. 92, 3794–3802 (2002) https://doi.org/10.1063/1.1503396

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Hole scattering near the valence band edge in wurtzite gallium nitride

J. D. Albrecht; P. P. Ruden; T. L. Reinecke

J. Appl. Phys. 92, 3803–3814 (2002) https://doi.org/10.1063/1.1503392

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Co-implantation of Si+N into GaN for n-type doping

Yoshitaka Nakano; Takashi Jimbo

J. Appl. Phys. 92, 3815–3819 (2002) https://doi.org/10.1063/1.1504500

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Optical pump-and-probe measurement of the thermal conductivity of nitride thin films

B. C. Daly; H. J. Maris; A. V. Nurmikko; M. Kuball; J. Han

J. Appl. Phys. 92, 3820–3824 (2002) https://doi.org/10.1063/1.1505995

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Nonalloyed ohmic mechanism of TiN interfacial layer in Ti/Al contacts to $({NH}_{4})_{2} S_{x}$ -treated $n$ -type GaN layers

Ching-Ting Lee; Yow-Jon Lin; Chun-Hung Lin

J. Appl. Phys. 92, 3825–3829 (2002) https://doi.org/10.1063/1.1506383

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Parallel conductivity of random GaAs/AlGaAs superlattices in regime of controlled vertical disorder

Yu. A. Pusep; A. J. Chiquito; S. Mergulhão; A. I. Toropov

J. Appl. Phys. 92, 3830–3834 (2002) https://doi.org/10.1063/1.1506002

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Temperature dependence of carrier transport in conducting polymers: Similarity to amorphous inorganic semiconductors

Ashok K. Kapoor; S. C. Jain; J. Poortmans; Vikram Kumar; R. Mertens

J. Appl. Phys. 92, 3835–3838 (2002) https://doi.org/10.1063/1.1506394

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Magnetic resonance studies of chemically intercalated ${Li}_{x} V_{2} O_{5}$ aerogels

P. E. Stallworth; F. S. Johnson; S. G. Greenbaum; S. Passerini; J. Flowers; W. Smyrl

J. Appl. Phys. 92, 3839–3852 (2002) https://doi.org/10.1063/1.1503171

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Influence of the passive region on zero field steps for window Josephson junctions

A. Benabdallah; J. G. Caputo

J. Appl. Phys. 92, 3853–3862 (2002) https://doi.org/10.1063/1.1503856

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Magnetoultrasonic studies in liquids for the influence of magnetic fields on frequency and amplitude

O. Gourakishwar Singh

J. Appl. Phys. 92, 3863–3866 (2002) https://doi.org/10.1063/1.1500416

Abstract

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Coexisting ferro- and antiferromagnetism in ${Ni}_{2} MnAl$ Heusler alloys

Mehmet Acet; Eyup Duman; Eberhard F. Wassermann; Lluis Mañosa; Antoni Planes

J. Appl. Phys. 92, 3867–3871 (2002) https://doi.org/10.1063/1.1504498

Abstract

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Magnetic properties of Mn-substituted Ni–Zn ferrites

Amarendra K. Singh; T. C. Goel; R. G. Mendiratta; O. P. Thakur; Chandra Prakash

J. Appl. Phys. 92, 3872–3876 (2002) https://doi.org/10.1063/1.1504493

Abstract

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Fluctuation–dissipation considerations for phenomenological damping models for ferromagnetic thin films

Neil Smith

J. Appl. Phys. 92, 3877–3885 (2002) https://doi.org/10.1063/1.1500782

Abstract

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Enhancement of switching stability of tunneling magnetoresistance systems with artificial ferrimagnets

Chun-Yeol You; S. D. Bader

J. Appl. Phys. 92, 3886–3889 (2002) https://doi.org/10.1063/1.1503861

Abstract

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High power microwave properties of Zn-Y hexagonal ferrite—parallel pumping size effects

Alexey V. Nazarov; Richard G. Cox; Carl E. Patton

J. Appl. Phys. 92, 3890–3895 (2002) https://doi.org/10.1063/1.1505678

Abstract

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Domain wall trapping at mesoscopic ferromagnetic junctions

A. O. Adeyeye; M. E. Welland

J. Appl. Phys. 92, 3896–3901 (2002) https://doi.org/10.1063/1.1506189

Abstract

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Studies of static and high-frequency magnetic properties for M-type ferrite ${BaFe}_{12−2x} {Co}_{x} {Zr}_{x} O_{19}$

Z. W. Li; Linfeng Chen; C. K. Ong

J. Appl. Phys. 92, 3902–3907 (2002) https://doi.org/10.1063/1.1506387

Abstract

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Application of Fourier harmonic analysis to the electromechanical response of an electroactive material

C. B. DiAntonio; F. A. Williams, Jr.; S. M. Pilgrim; W. A. Schulze

J. Appl. Phys. 92, 3908–3916 (2002) https://doi.org/10.1063/1.1503394

Abstract

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Abnormal behavior of the dielectric parameters of ${Ba}_{6−x} {Ln}_{8+2x/3} {Ti}_{18} O_{54}$ (Ln=La–Gd) solid solutions

Anatolii Belous; Oleg Ovchar; Matjaz Valant; Danilo Suvorov

J. Appl. Phys. 92, 3917–3922 (2002) https://doi.org/10.1063/1.1503855

Abstract

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Modeling of fatigue behavior in relaxor piezocrystals: Improved characteristics by Mn substitution

Shashank Priya; Hyeoung Woo Kim; Jungho Ryu; Shujun Zhang; Thomas R. Shrout; Kenji Uchino

J. Appl. Phys. 92, 3923–3927 (2002) https://doi.org/10.1063/1.1503411

Abstract

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Effects of silver doping on ferroelectric ${SrBi}_{2} {Ta}_{2} O_{9}$

B. Sih; A. Jung; Z.-G. Ye

J. Appl. Phys. 92, 3928–3935 (2002) https://doi.org/10.1063/1.1502206

Abstract

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A physical model for the hysteresis phenomenon of the ultrathin ${ZrO}_{2}$ film

J. C. Wang; S. H. Chiao; C. L. Lee; T. F. Lei; Y. M. Lin; M. F. Wang; S. C. Chen; C. H. Yu; M. S. Liang

J. Appl. Phys. 92, 3936–3940 (2002) https://doi.org/10.1063/1.1498964

Abstract

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MgO-mixed ${Ba}_{0.6} {Sr}_{0.4} {TiO}_{3}$ bulk ceramics and thin films for tunable microwave applications

Wontae Chang; Louise Sengupta

J. Appl. Phys. 92, 3941–3946 (2002) https://doi.org/10.1063/1.1505669

Abstract

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Structure and morphology of epitaxial ${PbZrO}_{3}$ films grown by metalorganic chemical vapor deposition

M. P. Moret; J. J. Schermer; F. D. Tichelaar; E. Aret; P. R. Hageman

J. Appl. Phys. 92, 3947–3957 (2002) https://doi.org/10.1063/1.1505993

Abstract

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Quantitative characterization of the fabrication processes of domain-inverted layers in ${LiTaO}_{3}$ by the line-focus-beam ultrasonic material characterization system

Masahito Miyashita; Jun-ichi Kushibiki

J. Appl. Phys. 92, 3958–3966 (2002) https://doi.org/10.1063/1.1504501

Abstract

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Evaluation of ${Ta}_{2} O_{5}$ as a buffer layer film for integration of microwave tunable ${Ba}_{1−x} {Sr}_{x} {TiO}_{3}$ based thin films with silicon substrates

M. W. Cole; P. C. Joshi; M. Ervin; M. Wood; R. L. Pfeffer

J. Appl. Phys. 92, 3967–3973 (2002) https://doi.org/10.1063/1.1505999

Abstract

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Effect of interfacial charge on polarization switching of lead zirconate titanate particles in lead zirconate titanate/polyurethane composites

C. K. Wong; Y. W. Wong; F. G. Shin

J. Appl. Phys. 92, 3974–3978 (2002) https://doi.org/10.1063/1.1505989

Abstract

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Growth and piezoelectric properties of $Pb ({Yb}_{1/2} {Nb}_{1/2}) O_{3} - {PbTiO}_{3}$ epitaxial films

Takeshi Yoshimura; Susan Trolier-McKinstry

J. Appl. Phys. 92, 3979–3984 (2002) https://doi.org/10.1063/1.1505997

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Electromechanical and elastic isotropy in the (011) plane of $0.7 {Pb(Mg}_{1/3} {Nb}_{2/3}) O_{3} -0.3 {PbTiO}_{3}$ crystals: Inhomogeneous shearing of polarization

D. Viehland; J. F. Li; A. Amin

J. Appl. Phys. 92, 3985–3989 (2002) https://doi.org/10.1063/1.1486051

Abstract

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Dielectric properties of oriented ${PbZrO}_{3}$ thin films grown by sol-gel process

Jiwei Zhai; Y. Yao; X. Li; T. F. Hung; Z. K. Xu; Haydn Chen; Eugene V. Colla; T. B. Wu

J. Appl. Phys. 92, 3990–3994 (2002) https://doi.org/10.1063/1.1505981

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NANOSCALE SCIENCE AND DESIGN

Burrowing of Pt nanoparticles into ${SiO}_{2}$ during ion-beam irradiation

Xiaoyuan Hu; David G. Cahill; Robert S. Averback

J. Appl. Phys. 92, 3995–4000 (2002) https://doi.org/10.1063/1.1503387

Abstract

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Excitation of ${Tm}^{3+}$ by resonant energy transfer from Si nanocrystals

Kei Watanabe; Hiroyuki Tamaoka; Minoru Fujii; Shinji Hayashi

J. Appl. Phys. 92, 4001–4006 (2002) https://doi.org/10.1063/1.1503860

Abstract

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Raman spectra of nano-structured carbon films synthesized using ammonia-containing feed gas

Seungho Choi; Kyung Ho Park; Soonil Lee; Ken Ha Koh

J. Appl. Phys. 92, 4007–4011 (2002) https://doi.org/10.1063/1.1499233

Abstract

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Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures

X. Weng; S. J. Clarke; W. Ye; S. Kumar; R. S. Goldman; A. Daniel; R. Clarke; J. Holt; J. Sipowska; A. Francis; V. Rotberg

J. Appl. Phys. 92, 4012–4018 (2002) https://doi.org/10.1063/1.1504177

Abstract

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Ballistic transport and photoluminescence in silicon nanocrystallites

Tatiana V. Torchynska

J. Appl. Phys. 92, 4019–4023 (2002) https://doi.org/10.1063/1.1502183

Abstract

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Experimental observation of scaling laws for alternating current and direct current conductivity in polymer-carbon nanotube composite thin films

B. E. Kilbride; J. N. Coleman; J. Fraysse; P. Fournet; M. Cadek; A. Drury; S. Hutzler; S. Roth; W. J. Blau

J. Appl. Phys. 92, 4024–4030 (2002) https://doi.org/10.1063/1.1506397

Abstract

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Synthesis and characterization of size-controlled vanadium dioxide nanocrystals in a fused silica matrix

R. Lopez; L. A. Boatner; T. E. Haynes; L. C. Feldman; R. F. Haglund, Jr.

J. Appl. Phys. 92, 4031–4036 (2002) https://doi.org/10.1063/1.1503391

Abstract

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Current density profile extraction of focused ion beams based on atomic force microscopy contour profiling of nanodots

A. Lugstein; B. Basnar; G. Hobler; E. Bertagnolli

J. Appl. Phys. 92, 4037–4042 (2002) https://doi.org/10.1063/1.1505685

Abstract

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Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

T. Mano; R. Nötzel; G. J. Hamhuis; T. J. Eijkemans; J. H. Wolter

J. Appl. Phys. 92, 4043–4046 (2002) https://doi.org/10.1063/1.1506191

Abstract

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DEVICE PHYSICS (PACS 85)

Double injection of charge carriers in chemical vapor deposited diamond-based diodes

J. A. Weima; J. von Borany; K. Meusinger; J. Horstmann; W. R. Fahrner

J. Appl. Phys. 92, 4047–4052 (2002) https://doi.org/10.1063/1.1502204

Abstract

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Physics-based numerical modeling and characterization of 6H-silicon-carbide metal–oxide–semiconductor field-effect transistors

Stephen K. Powell; Neil Goldsman; James M. McGarrity; Joseph Bernstein; Charles J. Scozzie; Aivars Lelis

J. Appl. Phys. 92, 4053–4061 (2002) https://doi.org/10.1063/1.1499523

Abstract

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Influence of electrode configurations on the quality factor and piezoelectric coupling constant of solidly mounted bulk acoustic wave resonators

Si-Hyung Lee; Ki Hyun Yoon; Jeon-Kook Lee

J. Appl. Phys. 92, 4062–4069 (2002) https://doi.org/10.1063/1.1505977

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Morphology and effects of hydrogen etching of porous SiC

Ashutosh Sagar; C. D. Lee; R. M. Feenstra; C. K. Inoki; T. S. Kuan

J. Appl. Phys. 92, 4070–4074 (2002) https://doi.org/10.1063/1.1501749

Abstract

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Linewidth determination in local oxidation nanolithography of silicon surfaces

Marta Tello; Fernando Garcı́a; Ricardo Garcı́a

J. Appl. Phys. 92, 4075–4079 (2002) https://doi.org/10.1063/1.1501753

Abstract

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Low voltage electrowetting-on-dielectric

Hyejin Moon; Sung Kwon Cho; Robin L. Garrell; Chang-Jin “CJ” Kim

J. Appl. Phys. 92, 4080–4087 (2002) https://doi.org/10.1063/1.1504171

Abstract

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Two-dimensional reconstruction theory of thermal conductivity profiles based on the thermal wave technique

Q. B. Zhou; Y. K. Lu; S. Y. Zhang; J. C. Cheng; X. J. Shui

J. Appl. Phys. 92, 4088–4094 (2002) https://doi.org/10.1063/1.1503172

Abstract

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Influence of nitrogen on diamond growth in oxyacetylene combustion chemical vapor deposition

M. Okkerse; M. H. J. M. de Croon; C. R. Kleijn; G. B. Marin; H. E. A. van den Akker

J. Appl. Phys. 92, 4095–4102 (2002) https://doi.org/10.1063/1.1502925

Abstract

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Ion-to- ${CH}_{3}$ flux ratio in diamond chemical-vapor deposition

Kungen Teii; Masaru Hori; Toshio Goto

J. Appl. Phys. 92, 4103–4108 (2002) https://doi.org/10.1063/1.1506384

Abstract

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Spectral shape of in situ mass spectra of sympathetically cooled molecular ions

Takashi Baba; Izumi Waki

J. Appl. Phys. 92, 4109–4116 (2002) https://doi.org/10.1063/1.1506005

Abstract

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Improving solar cell efficiencies by up-conversion of sub-band-gap light

T. Trupke; M. A. Green; P. Würfel

J. Appl. Phys. 92, 4117–4122 (2002) https://doi.org/10.1063/1.1505677

Abstract

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COMMUNICATIONS

In situ study of the effect of temperature on the electronic structure of ${Ni}_{x} {Mn}_{3−x} O_{4+δ}$ thin films using scanning tunneling spectroscopy

A. Basu; A. W. Brinkman; Z. Klusek; P. K. Datta; P. Kowalczyk

J. Appl. Phys. 92, 4123–4125 (2002) https://doi.org/10.1063/1.1505690

Abstract

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Thermoelectric effect spectroscopy of deep levels in semi-insulating GaN

U. V. Desnica; M. Pavlović; Z.-Q. Fang; D. C. Look

J. Appl. Phys. 92, 4126–4128 (2002) https://doi.org/10.1063/1.1504168

Abstract

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Rapid thermal annealing effects on blue luminescence of As-implanted GaN

H. Y. Huang; J. Q. Xiao; C. S. Ku; H. M. Chung; W. K. Chen; W. H. Chen; M. C. Lee; H. Y. Lee

J. Appl. Phys. 92, 4129–4131 (2002) https://doi.org/10.1063/1.1503160

Abstract

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Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers

H. C. Lin; K. L. Chang; K. C. Hsieh; K. Y. Cheng; W. H. Wang

J. Appl. Phys. 92, 4132–4134 (2002) https://doi.org/10.1063/1.1502200

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Phonon behaviors and electronic structures of the filled skutterudite ${Yb}_{y} {Co}_{4} {Sb}_{12}$ compounds: An electron tunneling study

Jiro Nagao; Devaraj Nataraj; Marhoun Ferhat; Tsutomu Uchida; Satoshi Takeya; Takao Ebinuma; Hiroaki Anno; Kakuei Matsubara; Eiji Hatta; Kōichi Mukasa

J. Appl. Phys. 92, 4135–4137 (2002) https://doi.org/10.1063/1.1503161

Abstract

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Spin polarization induced by an external electric field in a hybrid magnetic-electric barrier

Bin Wang; Yong Guo; Xin-Yi Chen; Bing-Lin Gu

J. Appl. Phys. 92, 4138–4140 (2002) https://doi.org/10.1063/1.1505691

Abstract

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Voltage-controllable multiwavelength InAs quantum-dot infrared photodetectors for mid- and far-infrared detection

Zhengmao Ye; Joe C. Campbell; Zhonghui Chen; Eui-Tae Kim; Anupam Madhukar

J. Appl. Phys. 92, 4141–4143 (2002) https://doi.org/10.1063/1.1504167

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ERRATA

Publisher’s Note: “Monte Carlo simulations of interacting magnetic nanoparticles” [J. Appl. Phys. 91, 6926 (2002)]

H. K. Lee; T. C. Schulthess; D. P. Landau; G. Brown; J. P. Pierce; Z. Gai; G. A. Farnan; J. Shen

J. Appl. Phys. 92, 4144 (2002) https://doi.org/10.1063/1.1505648

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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