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Issues
1 September 2002
ISSN 0021-8979
EISSN 1089-7550
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Propagation losses of the fundamental mode in a single line-defect photonic crystal waveguide on an InP membrane
Y. Désières; T. Benyattou; R. Orobtchouk; A. Morand; P. Benech; C. Grillet; C. Seassal; X. Letartre; P. Rojo-Romeo; P. Viktorovitch
J. Appl. Phys. 92, 2227–2234 (2002)
https://doi.org/10.1063/1.1495890
High-temperature operation of a third-order mode optically pumped semiconductor laser
J. Appl. Phys. 92, 2242–2247 (2002)
https://doi.org/10.1063/1.1499217
Thermally induced transmission variations in photonic band gap structures
M. C. Larciprete; C. Sibilia; S. Paoloni; G. Leahu; R. Li Voti; M. Bertolotti; M. Scalora; K. Panajotov
J. Appl. Phys. 92, 2251–2255 (2002)
https://doi.org/10.1063/1.1499981
Accurate identification of the band gap of photonic crystals from transmission spectra
J. Appl. Phys. 92, 2256–2259 (2002)
https://doi.org/10.1063/1.1499982
Synthesized rare-earth doped oxide glasses for nonlinear optics
J. Appl. Phys. 92, 2260–2268 (2002)
https://doi.org/10.1063/1.1498888
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
Influence of the thermodynamic equilibrium state in the excitation of samples by a plasma at atmospheric pressure
J. Appl. Phys. 92, 2269–2275 (2002)
https://doi.org/10.1063/1.1492869
Methane conversion into acetylene in a microwave plasma: Optimization of the operating parameters
J. Appl. Phys. 92, 2276–2283 (2002)
https://doi.org/10.1063/1.1497457
Spatial population distribution of laser ablation species determined by self-reversed emission line profile
J. Appl. Phys. 92, 2296–2303 (2002)
https://doi.org/10.1063/1.1500419
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
The addition of Sb as a surfactant to GaN growth by metal organic vapor phase epitaxy
J. Appl. Phys. 92, 2304–2309 (2002)
https://doi.org/10.1063/1.1495891
Electron irradiation induced phase decomposition in alkaline earth multi-component oxide glass
J. Appl. Phys. 92, 2310–2316 (2002)
https://doi.org/10.1063/1.1496148
Evolution of -damaged graphite surface during annealing as investigated by scanning probe microscopy
J. Appl. Phys. 92, 2317–2322 (2002)
https://doi.org/10.1063/1.1495892
Surface photovoltage measurements in -Si:H: Manifestation of the bottom space charge region
J. Appl. Phys. 92, 2323–2329 (2002)
https://doi.org/10.1063/1.1495895
Physical mechanisms behind the ion-cut in hydrogen implanted silicon
J. Appl. Phys. 92, 2335–2342 (2002)
https://doi.org/10.1063/1.1494844
Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure
S. D. Wang; J. S. Liang; Y. S. Huang; C. W. Tien; Y. M. Chang; C. W. Chen; N. Y. Li; K. K. Tiong; Fred H. Pollak
J. Appl. Phys. 92, 2350–2353 (2002)
https://doi.org/10.1063/1.1497697
Comparison of models of electroluminescence in organic double-layer light-emitting diodes
J. Appl. Phys. 92, 2359–2367 (2002)
https://doi.org/10.1063/1.1497717
Reduced pressure chemical vapor deposition of heterostructures for n-type metal–oxide–semiconductor transistors
J. M. Hartmann; T. Ernst; V. Loup; F. Ducroquet; G. Rolland; D. Lafond; P. Holliger; F. Laugier; M. N. Séméria; S. Deleonibus
J. Appl. Phys. 92, 2368–2373 (2002)
https://doi.org/10.1063/1.1497451
Crystallinity of films by epitaxial growth with a self-buffer-layer
J. Appl. Phys. 92, 2378–2384 (2002)
https://doi.org/10.1063/1.1495530
Formation of misfit dislocations in GaAs/InGaAs multiquantum wells observed by photoluminescence microscopy
J. Appl. Phys. 92, 2385–2390 (2002)
https://doi.org/10.1063/1.1496121
Enlargement of step-free SiC surfaces by homoepitaxial web growth of thin SiC cantilevers
Philip G. Neudeck; J. Anthony Powell; Glenn M. Beheim; Emye L. Benavage; Phillip B. Abel; Andrew J. Trunek; David J. Spry; Michael Dudley; William M. Vetter
J. Appl. Phys. 92, 2391–2400 (2002)
https://doi.org/10.1063/1.1497456
Hollow cathode sustained plasma microjets: Characterization and application to diamond deposition
J. Appl. Phys. 92, 2406–2411 (2002)
https://doi.org/10.1063/1.1497719
Ultrafast trapping times in ion implanted InP
C. Carmody; H. Boudinov; H. H. Tan; C. Jagadish; M. J. Lederer; V. Kolev; B. Luther-Davies; L. V. Dao; M. Gal
J. Appl. Phys. 92, 2420–2423 (2002)
https://doi.org/10.1063/1.1493651
Analytical model for the optical functions of amorphous semiconductors from the near-infrared to ultraviolet: Applications in thin film photovoltaics
A. S. Ferlauto; G. M. Ferreira; J. M. Pearce; C. R. Wronski; R. W. Collins; Xunming Deng; Gautam Ganguly
J. Appl. Phys. 92, 2424–2436 (2002)
https://doi.org/10.1063/1.1497462
Optical properties of oxygen precipitates and dislocations in silicon
J. Appl. Phys. 92, 2437–2445 (2002)
https://doi.org/10.1063/1.1497450
Optical properties of epilayers grown by molecular beam epitaxy
J. Appl. Phys. 92, 2446–2450 (2002)
https://doi.org/10.1063/1.1495065
Acoustic spectroscopy of lithium niobate: Elastic and piezoelectric coefficients
J. Appl. Phys. 92, 2451–2456 (2002)
https://doi.org/10.1063/1.1497702
Green electroluminescence from a Tb-doped AlN thin-film device on Si
J. Appl. Phys. 92, 2457–2460 (2002)
https://doi.org/10.1063/1.1497461
Growth and characterization of zirconium oxynitride films prepared by reactive direct current magnetron sputtering
J. Appl. Phys. 92, 2461–2466 (2002)
https://doi.org/10.1063/1.1498963
Microcrystalline silicon thin films studied using spectroscopic ellipsometry
J. Appl. Phys. 92, 2467–2474 (2002)
https://doi.org/10.1063/1.1499980
An atomic model of the nitrous-oxide-nitrided interface
J. Appl. Phys. 92, 2475–2478 (2002)
https://doi.org/10.1063/1.1497720
Solid-state decomposition of silicon carbide for growing ultra-thin heteroepitaxial graphite films
A. Charrier; A. Coati; T. Argunova; F. Thibaudau; Y. Garreau; R. Pinchaux; I. Forbeaux; J.-M. Debever; M. Sauvage-Simkin; J.-M. Themlin
J. Appl. Phys. 92, 2479–2484 (2002)
https://doi.org/10.1063/1.1498962
Nonlinear optical properties of laser ablated silicon nanostructures
J. Appl. Phys. 92, 2490–2494 (2002)
https://doi.org/10.1063/1.1498881
Pulsed laser-assisted surface structuring with optical near-field enhanced effects
J. Appl. Phys. 92, 2495–2500 (2002)
https://doi.org/10.1063/1.1501768
On the nature of ion implantation induced dislocation loops in 4H-silicon carbide
J. Appl. Phys. 92, 2501–2505 (2002)
https://doi.org/10.1063/1.1499749
Monophasic films deposited on by pulsed laser ablation
J. Appl. Phys. 92, 2518–2523 (2002)
https://doi.org/10.1063/1.1499522
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
Raman scattering in doped transition metal pentatellurides
J. Appl. Phys. 92, 2524–2527 (2002)
https://doi.org/10.1063/1.1495535
Thermal conductivity of GaN films: Effects of impurities and dislocations
J. Appl. Phys. 92, 2534–2539 (2002)
https://doi.org/10.1063/1.1497704
Band-tail profiling in microcrystalline silicon by photoconductivity analysis
J. Appl. Phys. 92, 2540–2543 (2002)
https://doi.org/10.1063/1.1499218
Preparation of sintered degenerate n-type PbTe with a small grain size and its thermoelectric properties
J. Appl. Phys. 92, 2544–2549 (2002)
https://doi.org/10.1063/1.1499206
Critical concentration for the doping-induced metal–nonmetal transition in cubic and hexagonal GaN
J. Appl. Phys. 92, 2550–2555 (2002)
https://doi.org/10.1063/1.1499202
Study of surface recombination velocity of radiation detectors by direct current photoconductivity
J. Appl. Phys. 92, 2556–2560 (2002)
https://doi.org/10.1063/1.1497696
Theoretical investigation of intersubband hole transitions in Si/SiGe/Si quantum wells
J. Appl. Phys. 92, 2586–2592 (2002)
https://doi.org/10.1063/1.1497716
Spectroscopic characterization of stress-induced leakage current in sub 5-nm-thick silicon oxide film
J. Appl. Phys. 92, 2593–2601 (2002)
https://doi.org/10.1063/1.1499978
Detailed study of the composition of hydrogenated layers for high-quality silicon surface passivation
J. Appl. Phys. 92, 2602–2609 (2002)
https://doi.org/10.1063/1.1495529
Influence of Se on the electron mobility in extruded thermoelectric alloys
J. Appl. Phys. 92, 2610–2613 (2002)
https://doi.org/10.1063/1.1499521
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Enhanced flux pinning in Zr-doped bulk superconductors prepared at ambient pressure
J. Appl. Phys. 92, 2614–2619 (2002)
https://doi.org/10.1063/1.1496128
Segregation of the Cu atom at the ferromagnetic/antiferromagnetic interlayer in spin-valve structures
J. Appl. Phys. 92, 2620–2623 (2002)
https://doi.org/10.1063/1.1495092
Thickness dependence of superconducting transition temperature in Co/SC/Co trilayers and SC/Co bilayers with
J. Appl. Phys. 92, 2624–2627 (2002)
https://doi.org/10.1063/1.1496126
Determination of inter- and intragranular currents in high temperature superconducting tapes and coated conductors
J. Appl. Phys. 92, 2628–2633 (2002)
https://doi.org/10.1063/1.1498878
Magnetic properties of and Mn) anisotropic coarse powders with high coercivity
J. Appl. Phys. 92, 2641–2645 (2002)
https://doi.org/10.1063/1.1498880
Output enhancement of spin-valve giant magnetoresistance in current-perpendicular-to-plane geometry
J. Appl. Phys. 92, 2646–2650 (2002)
https://doi.org/10.1063/1.1499744
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Significant suppression of leakage current in thin films by Ni or Mn doping
J. Appl. Phys. 92, 2651–2654 (2002)
https://doi.org/10.1063/1.1495526
Ferroelectric-relaxor behavior of ceramics
J. Appl. Phys. 92, 2655–2657 (2002)
https://doi.org/10.1063/1.1495069
Self-limiting behavior of the grain growth in lead zirconate titanate thin films
J. Appl. Phys. 92, 2658–2662 (2002)
https://doi.org/10.1063/1.1496147
Polarization switching of ferroelectric ceramics with grain boundary effect: A simple continuum model
J. Appl. Phys. 92, 2668–2673 (2002)
https://doi.org/10.1063/1.1479460
The interface screening model as origin of imprint in thin films. I. Dopant, illumination, and bias dependence
J. Appl. Phys. 92, 2680–2687 (2002)
https://doi.org/10.1063/1.1498966
The interface screening model as origin of imprint in thin films. II. Numerical simulation and verification
J. Appl. Phys. 92, 2688–2696 (2002)
https://doi.org/10.1063/1.1498967
Study of oxygen vacancies in by positron annihilation
J. Appl. Phys. 92, 2697–2702 (2002)
https://doi.org/10.1063/1.1498889
Dielectric measurement to probe electron ordering and electron-spin interaction
J. Appl. Phys. 92, 2703–2708 (2002)
https://doi.org/10.1063/1.1498876
Rb-doped potassium titanyl phosphate for periodic ferroelectric domain inversion
J. Appl. Phys. 92, 2717–2723 (2002)
https://doi.org/10.1063/1.1496125
Investigation of hydrogen-induced degradation in thin film capacitors for the application of memory devices
J. Appl. Phys. 92, 2724–2728 (2002)
https://doi.org/10.1063/1.1499976
NANOSCALE SCIENCE AND DESIGN
Uniformity tests of individual segments of interband cascade diode laser Nanostacks®
J. Appl. Phys. 92, 2729–2733 (2002)
https://doi.org/10.1063/1.1497460
Synthesis and Raman scattering study of rutile nanowires
J. Appl. Phys. 92, 2740–2742 (2002)
https://doi.org/10.1063/1.1497718
Real time probing of magnetization switching in magnetic nanostructures
J. Appl. Phys. 92, 2743–2747 (2002)
https://doi.org/10.1063/1.1497695
Nanocrystalline silicon electron emitter with a high efficiency enhanced by a planarization technique
J. Appl. Phys. 92, 2748–2757 (2002)
https://doi.org/10.1063/1.1497703
Influence of grain size and structural changes on the electrical properties of nanocrystalline zinc ferrite
J. Appl. Phys. 92, 2770–2778 (2002)
https://doi.org/10.1063/1.1498883
Local magnetostrictive response of small magnetic entities in artificial Fe–Cr composites
J. Appl. Phys. 92, 2779–2782 (2002)
https://doi.org/10.1063/1.1500783
Properties of carbon onions produced by an arc discharge in water
J. Appl. Phys. 92, 2783–2788 (2002)
https://doi.org/10.1063/1.1498884
DEVICE PHYSICS (PACS 85)
Double-layer formation in organic light-emitting electrochemical cells
J. Appl. Phys. 92, 2795–2802 (2002)
https://doi.org/10.1063/1.1499201
Defect study of GaInP/GaAs based heterojunction bipolar transistor emitter layer
J. Appl. Phys. 92, 2803–2806 (2002)
https://doi.org/10.1063/1.1500417
APPLIED BIOPHYSICS (PACS 87)
Electric conductivity of dye modified DNA films with and without light irradiation in various humidities
J. Appl. Phys. 92, 2816–2820 (2002)
https://doi.org/10.1063/1.1498959
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Computational study of high-speed liquid droplet impact
J. Appl. Phys. 92, 2821–2828 (2002)
https://doi.org/10.1063/1.1495533
Positive dielectrophoresis and heterogeneous aggregation in high-gradient ac electric fields
J. Appl. Phys. 92, 2829–2843 (2002)
https://doi.org/10.1063/1.1495534
and quantum Hall array resistance standards
J. Appl. Phys. 92, 2844–2854 (2002)
https://doi.org/10.1063/1.1495893
Multi-diagnostic comparison of femtosecond and nanosecond pulsed laser plasmas
J. Appl. Phys. 92, 2867–2874 (2002)
https://doi.org/10.1063/1.1497449
Kerr effect in gas and its application to noncontact measurement of electric field
J. Appl. Phys. 92, 2875–2879 (2002)
https://doi.org/10.1063/1.1499216
Ultrahigh boron doping of nanocrystalline diamond films and their electron field emission characteristics
J. Appl. Phys. 92, 2880–2883 (2002)
https://doi.org/10.1063/1.1498965
Electron-beam enhancement of the metal vapor vacuum arc ion source
V. A. Batalin; A. S. Bugaev; V. I. Gushenets; A. Hershcovitch; B. M. Johnson; A. A. Kolomiets; R. P. Kuibeda; T. V. Kulevoy; E. M. Oks; V. I. Pershin; S. V. Petrenko; D. N. Seleznev; G. Yu. Yushkov
J. Appl. Phys. 92, 2884–2889 (2002)
https://doi.org/10.1063/1.1498956
Mott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors
J. Appl. Phys. 92, 2890–2898 (2002)
https://doi.org/10.1063/1.1498968
Deep nitrogen implantation for GaAs microstructuring using pulsed electrochemical etching
J. Appl. Phys. 92, 2923–2928 (2002)
https://doi.org/10.1063/1.1498886
Electromagnetic resonances in individual and coupled split-ring resonators
J. Appl. Phys. 92, 2929–2936 (2002)
https://doi.org/10.1063/1.1497452
COMMUNICATIONS
Gain spectra of coupled InGaAsP/InP quantum wells measured with a segmented contact traveling wave device
J. Appl. Phys. 92, 2942–2944 (2002)
https://doi.org/10.1063/1.1497448
Optical absorption and photoluminescence characteristics of single crystals
J. Appl. Phys. 92, 2945–2947 (2002)
https://doi.org/10.1063/1.1499742
Electron drift in and mixtures
J. Appl. Phys. 92, 2948–2949 (2002)
https://doi.org/10.1063/1.1497447
ERRATA
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.