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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Space-charge dynamics in photorefractive polymers

Oksana Ostroverkhova; Kenneth D. Singer

J. Appl. Phys. 92, 1727–1743 (2002) https://doi.org/10.1063/1.1491279

Abstract

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Fully leaky guided wave determination of the original alignment direction for the directors at the walls in a twisted nematic liquid crystal cell

F. Z. Yang; H. J. Gao; J. R. Sambles

J. Appl. Phys. 92, 1744–1751 (2002) https://doi.org/10.1063/1.1491025

Abstract

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Pretilted and grating alignment of liquid crystals by oblique ultraviolet irradiation of polyimide

C. J. Newsome; M. O'Neill

J. Appl. Phys. 92, 1752–1756 (2002) https://doi.org/10.1063/1.1492863

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Thomson-scattering observation of non-Maxwellian electron energy distribution in inductively coupled $C_{4} F_{8} / Ar$ and ${CF}_{4} / Ar$ plasmas and the effect of vibrational excitation and nonlocal electron kinetics

A. Kono; H. Funahashi

J. Appl. Phys. 92, 1757–1763 (2002) https://doi.org/10.1063/1.1493659

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Far field modeling of the plasma plume of a Hall thruster

Iain D. Boyd; Rainer A. Dressler

J. Appl. Phys. 92, 1764–1774 (2002) https://doi.org/10.1063/1.1492014

Abstract

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High resolution laser-driven proton radiography

J. A. Cobble; R. P. Johnson; T. E. Cowan; N. Renard-Le Galloudec; M. Allen

J. Appl. Phys. 92, 1775–1779 (2002) https://doi.org/10.1063/1.1494128

Abstract

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Model and probe measurements of inductively coupled ${CF}_{4}$ discharges

T. Kimura; K. Ohe

J. Appl. Phys. 92, 1780–1787 (2002) https://doi.org/10.1063/1.1491023

Abstract

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Arc erosion characteristics of pseudospark discharge in multiaperture geometry

Ahmer Naweed; Jochen Kiefer; Constantin Gavrilescu; Willi Neff

J. Appl. Phys. 92, 1788–1792 (2002) https://doi.org/10.1063/1.1491022

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Photoreflectance spectroscopy of wurtzite CdS

Akinori Imada; Shunji Ozaki; Sadao Adachi

J. Appl. Phys. 92, 1793–1798 (2002) https://doi.org/10.1063/1.1493655

Abstract

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Formation of cellular defect structure on GaSb ion-implanted at low temperature

Noriko Nitta; Masafumi Taniwaki; Yoshihiko Hayashi; Toshimasa Yoshiie

J. Appl. Phys. 92, 1799–1802 (2002) https://doi.org/10.1063/1.1493662

Abstract

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In situ study of void growth kinetics in electroplated Cu lines

E. Liniger; L. Gignac; C.-K. Hu; S. Kaldor

J. Appl. Phys. 92, 1803–1810 (2002) https://doi.org/10.1063/1.1492871

Abstract

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Crystal growth and characterization of the cubic semiconductor ${Cu}_{2} {SnSe}_{4}$

G. Marcano; C. Rincón; G. Marı́n; R. Tovar; G. Delgado

J. Appl. Phys. 92, 1811–1815 (2002) https://doi.org/10.1063/1.1492018

Abstract

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Optical response of one-dimensional $(Si / {SiO}_{2})_{m}$ photonic crystals

M. Patrini; M. Galli; M. Belotti; L. C. Andreani; G. Guizzetti; G. Pucker; A. Lui; P. Bellutti; L. Pavesi

J. Appl. Phys. 92, 1816–1820 (2002) https://doi.org/10.1063/1.1492866

Abstract

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Ion-beam doping of silver in amorphous ${As}_{2} S_{3}$ thin films

Takenobu Suzuki; Hideo Hosono

J. Appl. Phys. 92, 1821–1824 (2002) https://doi.org/10.1063/1.1492862

Abstract

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Characterization of photorefractive GaAlAs multiple quantum well structures by ac photoelectromotive force and modulated photocarrier grating techniques

S. Stepanov; I. Seres; S. Mansurova; D. Nolte

J. Appl. Phys. 92, 1825–1832 (2002) https://doi.org/10.1063/1.1490155

Abstract

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Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition

Kaupo Kukli; Mikko Ritala; Jaan Aarik; Teet Uustare; Markku Leskelä

J. Appl. Phys. 92, 1833–1840 (2002) https://doi.org/10.1063/1.1493657

Abstract

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Competitive effects of grooves and photoalignment on nematic liquid-crystal alignment using azobenzene polymer

Doo-Han Chung; Takashi Fukuda; Yoichi Takanishi; Ken Ishikawa; Hiro Matsuda; Hideo Takezoe; Mikhail A. Osipov

J. Appl. Phys. 92, 1841–1844 (2002) https://doi.org/10.1063/1.1493658

Abstract

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Substrate bias dependence of Raman spectra for TiN films deposited by filtered cathodic vacuum arc

Y. H. Cheng; B. K. Tay; S. P. Lau; H. Kupfer; F. Richter

J. Appl. Phys. 92, 1845–1849 (2002) https://doi.org/10.1063/1.1491588

Abstract

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Electrical damage of an ultrathin Si oxynitride layer induced by scanning tunneling spectroscopy

Noriyuki Miyata; Masakazu Ichikawa

J. Appl. Phys. 92, 1850–1857 (2002) https://doi.org/10.1063/1.1492865

Abstract

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Silicon–on–insulator waveguide photodetector with Ge/Si self-assembled islands

M. El kurdi; P. Boucaud; S. Sauvage; G. Fishman; O. Kermarrec; Y. Campidelli; D. Bensahel; G. Saint-Girons; I. Sagnes; G. Patriarche

J. Appl. Phys. 92, 1858–1861 (2002) https://doi.org/10.1063/1.1493656

Abstract

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Structural characterization of Ni–Al (111) interface by surface x-ray absorption spectroscopy

L. Damoc; E. Fonda; P. Le Fevre; A. Traverse

J. Appl. Phys. 92, 1862–1867 (2002) https://doi.org/10.1063/1.1493652

Abstract

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Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped ${Ba}_{0.7} {Sr}_{0.3} {TiO}_{3}$ thin films

Shou-Yi Kuo; Chin-Sheng Chen; Tseung-Yuen Tseng; S.-C. Chang; Wen-Feng Hsieh

J. Appl. Phys. 92, 1868–1872 (2002) https://doi.org/10.1063/1.1492870

Abstract

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Influence of overlayers on determination of the optical constants of ZnSe thin films

Daniel Franta; Ivan Ohlídal; Petr Klapetek; Alberto Montaigne-Ramil; Alberta Bonanni; David Stifter; Helmut Sitter

J. Appl. Phys. 92, 1873–1880 (2002) https://doi.org/10.1063/1.1489068

Abstract

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Electrical and optical properties of beryllium-implanted Mg-doped GaN

Chang-Chin Yu; C. F. Chu; J. Y. Tsai; C. F. Lin; S. C. Wang

J. Appl. Phys. 92, 1881–1887 (2002) https://doi.org/10.1063/1.1494110

Abstract

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Thermal equilibrium governing the formation of negatively charged excitons in resonant tunneling diodes

A. Vercik; Y. Galvão Gobato; M. J. S. P. Brasil

J. Appl. Phys. 92, 1888–1892 (2002) https://doi.org/10.1063/1.1494851

Abstract

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Microstructure study of amorphous vanadium oxide thin films using raman spectroscopy

Se-Hee Lee; Hyeonsik M. Cheong; Maeng Je Seong; Ping Liu; C. Edwin Tracy; Angelo Mascarenhas; J. Roland Pitts; Satyen K. Deb

J. Appl. Phys. 92, 1893–1897 (2002) https://doi.org/10.1063/1.1495074

Abstract

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Characterization of Mg doped GaN by positron annihilation spectroscopy

Jeremy Moxom; Jun Xu; R. Suzuki; T. Ohdaira; George Brandes; Jeffrey S. Flynn

J. Appl. Phys. 92, 1898–1901 (2002) https://doi.org/10.1063/1.1492858

Abstract

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Morphological study of aluminum tris(8-hydroxyquinoline) thin films using infrared and Raman spectroscopy

R. J. Curry; W. P. Gillin; J. Clarkson; D. N. Batchelder

J. Appl. Phys. 92, 1902–1905 (2002) https://doi.org/10.1063/1.1495527

Abstract

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Thermally induced modifications on bonding configuration and density of defects of plasma deposited ${SiO}_{x} : H$ films

E. San Andrés; A. del Prado; I. Mártil; G. González-Dı́az; D. Bravo; F. J. López

J. Appl. Phys. 92, 1906–1913 (2002) https://doi.org/10.1063/1.1495068

Abstract

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Investigation of the effect of high-temperature annealing on stability of ultrathin ${Al}_{2} O_{3}$ films on Si(001)

Manisha Kundu; Noriyuki Miyata; Masakazu Ichikawa

J. Appl. Phys. 92, 1914–1921 (2002) https://doi.org/10.1063/1.1495066

Abstract

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${SiO}_{2} - {TiO}_{2}$ interfaces studied by ellipsometry and x-ray photoemission spectroscopy

B. Gallas; A. Brunet-Bruneau; S. Fisson; G. Vuye; J. Rivory

J. Appl. Phys. 92, 1922–1928 (2002) https://doi.org/10.1063/1.1494843

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Analysis of interfacial silicates and silicides formed by annealing ultrathin Hf on ${SiO}_{2} :$ Effect of ${Hf/SiO}_{2}$ thickness ratio

Jung-Ho Lee; Masakazu Ichikawa

J. Appl. Phys. 92, 1929–1935 (2002) https://doi.org/10.1063/1.1494846

Abstract

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Visible thermal emission from sub-band-gap laser excited cerium dioxide particles

Richard D. Robinson; Jonathan E. Spanier; Feng Zhang; Siu-Wai Chan; Irving P. Herman

J. Appl. Phys. 92, 1936–1941 (2002) https://doi.org/10.1063/1.1494130

Abstract

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Structural stability and electrical properties of ${Sr}_{2} {FeMoO}_{6}$ under high pressure

P. Zhao; R. C. Yu; F. Y. Li; Z. X. Liu; M. Z. Jin; C. Q. Jin

J. Appl. Phys. 92, 1942–1944 (2002) https://doi.org/10.1063/1.1496119

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Directional diffusion and void formation at a Si (001) bonded wafer interface

R. H. Esser; K. D. Hobart; F. J. Kub

J. Appl. Phys. 92, 1945–1949 (2002) https://doi.org/10.1063/1.1491590

Abstract

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Temperature and pressure dependences of the ${Mn}^{2+}$ and donor–acceptor emissions in ${ZnS:Mn}^{2+}$ nanoparticles

Wei Chen; Fuhai Su; Guohua Li; Alan G. Joly; Jan-Olle Malm; Jan-Olov Bovin

J. Appl. Phys. 92, 1950–1955 (2002) https://doi.org/10.1063/1.1495070

Abstract

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Reflective liquid-crystal display using an in-plane-switching super-twisted nematic cell

Yubao Sun; Hongmei Ma; Zhidong Zhang; Shin-Tson Wu

J. Appl. Phys. 92, 1956–1959 (2002) https://doi.org/10.1063/1.1496127

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Effects of slight misorientation of GaN templates on molecular-beam-epitaxy growth of ZnO

Hiroyuki Kato; Michihiro Sano; Kazuhiro Miyamoto; Takafumi Yao

J. Appl. Phys. 92, 1960–1963 (2002) https://doi.org/10.1063/1.1493648

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Thermopower enhancement in misfit cobaltites

A. Maignan; S. Hébert; D. Pelloquin; C. Michel; J. Hejtmanek

J. Appl. Phys. 92, 1964–1967 (2002) https://doi.org/10.1063/1.1494114

Abstract

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Deep levels in semi-insulating InP obtained by annealing under iron phosphide ambiance

H. W. Dong; Y. W. Zhao; Y. H. Zhang; J. H. Jiao; J. Q. Zhao; L. Y. Lin

J. Appl. Phys. 92, 1968–1970 (2002) https://doi.org/10.1063/1.1491026

Abstract

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Superfast fronts of impact ionization in initially unbiased layered semiconductor structures

P. Rodin; U. Ebert; W. Hundsdorfer; I. V. Grekhov

J. Appl. Phys. 92, 1971–1980 (2002) https://doi.org/10.1063/1.1494113

Abstract

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Anisotropic random resistor networks: A model for piezoresistive response of thick-film resistors

C. Grimaldi; P. Ryser; S. Strässler

J. Appl. Phys. 92, 1981–1986 (2002) https://doi.org/10.1063/1.1495067

Abstract

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Transient simulations of a resonant tunneling diode

Olivier Pinaud

J. Appl. Phys. 92, 1987–1994 (2002) https://doi.org/10.1063/1.1494127

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Electrical conductivity of Wesgo AL995 alumina under fast electron irradiation in a high voltage electron microscope

M. M. R. Howlader; C. Kinoshita; K. Shiiyama; M. Kutsuwada

J. Appl. Phys. 92, 1995–1999 (2002) https://doi.org/10.1063/1.1494845

Abstract

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Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

M. Albrecht; H. P. Strunk; J. L. Weyher; I. Grzegory; S. Porowski; T. Wosinski

J. Appl. Phys. 92, 2000–2005 (2002) https://doi.org/10.1063/1.1490618

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Response function of a Hall magnetosensor in the diffusive regime

Y. G. Cornelissens; F. M. Peeters

J. Appl. Phys. 92, 2006–2012 (2002) https://doi.org/10.1063/1.1487909

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Double-junction effect in proton-irradiated silicon diodes

A. Castaldini; A. Cavallini; L. Polenta; C. Canali; F. Nava

J. Appl. Phys. 92, 2013–2016 (2002) https://doi.org/10.1063/1.1495077

Abstract

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Carrier generation in highly oriented ${WO}_{3}$ films by proton or helium implantation

M. Miyakawa; K. Ueda; H. Hosono

J. Appl. Phys. 92, 2017–2022 (2002) https://doi.org/10.1063/1.1496120

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Electronic states in the conduction band of V-groove quantum wires

Dejan M. Gvozdić; Andreas Schlachetzki

J. Appl. Phys. 92, 2023–2034 (2002) https://doi.org/10.1063/1.1495091

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Charge injection and transport in electrochemical films of poly(3-hexylthiophene)

R. Valaski; L. M. Moreira; L. Micaroni; I. A. Hümmelgen

J. Appl. Phys. 92, 2035–2040 (2002) https://doi.org/10.1063/1.1494850

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Study of carrier dynamics in indirect transition-type $({Al}_{0.7} {Ga}_{0.3})_{0.5} {In}_{0.5} {P/Al}_{x} {In}_{1−x} P$ superlattices by transient photoluminescence and photocurrent measurements

Yoshihiro Ishitani; Kouhei Matsuya; Toshiaki Fujita; Keijiro Nakasa; Yutaka Harima

J. Appl. Phys. 92, 2041–2046 (2002) https://doi.org/10.1063/1.1491019

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Magnetic and structural characterization of Mn-implanted, single-crystal ${ZnGeSiN}_{2}$

S. J. Pearton; M. E. Overberg; C. R. Abernathy; N. A. Theodoropoulou; A. F. Hebard; S. N. G. Chu; A. Osinsky; V. Fuflyigin; L. D. Zhu; A. Y. Polyakov; R. G. Wilson

J. Appl. Phys. 92, 2047–2051 (2002) https://doi.org/10.1063/1.1490621

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Relation between microstructures and magnetic properties upon annealing in ${Fe}_{50} {Mn}_{50} / {Ni}_{80} {Fe}_{20}$ films

Ming Xu; Zhengqi Lu; Tao Yang; Cuixiu Liu; Shufan Cui; Zhenhong Mai; Wuyan Lai; Quanjie Jia; Wenli Zheng

J. Appl. Phys. 92, 2052–2057 (2002) https://doi.org/10.1063/1.1493653

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Microwave magnetoabsorption in glass-coated amorphous microwires with radii close to skin depth

S. E. Lofland; H. Garcia-Miquel; M. Vazquez; S. M. Bhagat

J. Appl. Phys. 92, 2058–2063 (2002) https://doi.org/10.1063/1.1494847

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Thermal-dynamic reversal of fine magnetic grains with arbitrary anisotropy axes orientation

Xiaobin Wang; H. Neal Bertram; Vladimir L. Safonov

J. Appl. Phys. 92, 2064–2072 (2002) https://doi.org/10.1063/1.1495093

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Glass-forming ability and soft magnetic properties of FeCoSiAlGaPCB amorphous alloys

J. M. Borrego; A. Conde; S. Roth; J. Eckert

J. Appl. Phys. 92, 2073–2078 (2002) https://doi.org/10.1063/1.1494848

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Structural and magnetic transformation of monodispersed iron oxide particles in a reducing atmosphere

L. C. Varanda; M. Jafelicci, Jr.; P. Tartaj; K. O’ Grady; T. González-Carreño; M. P. Morales; T. Muñoz; C. J. Serna

J. Appl. Phys. 92, 2079–2085 (2002) https://doi.org/10.1063/1.1496124

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Investigation of two-phase nucleation in paraelectric phase of ferroelectrics with ferroelectric–antiferroelectric–paraelectric triple point

V. M. Ishchuk; V. L. Sobolev

J. Appl. Phys. 92, 2086–2093 (2002) https://doi.org/10.1063/1.1493661

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Effects of rare earth metal substituents on the piezoelectric and polarization properties of $Pb (Zr,Ti) O_{3} - Pb (Sb,Mn) O_{3}$ ceramics

Yongkang Gao; Kenji Uchino; Dwight Viehland

J. Appl. Phys. 92, 2094–2099 (2002) https://doi.org/10.1063/1.1490617

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Structural and dielectric characterization of the $({Ba}_{1−x} {Sr}_{x})({Ti}_{0.9} {Sn}_{0.1}) O_{3}$ thin films deposited on $Pt / Ti / {SiO}_{2} / Si$ substrate by radio frequency magnetron sputtering

Moo-Chin Wang; Cheng-Chi Tsai; Nan-Chung Wu; Kun-Ming Hung

J. Appl. Phys. 92, 2100–2107 (2002) https://doi.org/10.1063/1.1492002

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Effect of textured $Pb ({Zr}_{1−x} {Ti}_{x}) O_{3}$ seed layer on fatigue properties of ferroelectric ${Pb}_{0.99} [({Zr}_{0.6} {Sn}_{0.4})_{0.85} {Ti}_{0.15}]_{0.98} {Nb}_{0.02} O_{3}$ thin films

Ki Hyun Yoon; Hyun Cheol Shin; Jihoon Park; Dong Heon Kang

J. Appl. Phys. 92, 2108–2111 (2002) https://doi.org/10.1063/1.1495894

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Domain reorientation anisotropy in ferroelectric polycrystals

M. H. Lente; J. A. Eiras

J. Appl. Phys. 92, 2112–2117 (2002) https://doi.org/10.1063/1.1495531

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NANOSCALE SCIENCE AND DESIGN

Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon

Anisha Gokarna; N. R. Pavaskar; S. D. Sathaye; V. Ganesan; S. V. Bhoraskar

J. Appl. Phys. 92, 2118–2124 (2002) https://doi.org/10.1063/1.1483381

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Dynamic magnetic behavior of ${Fe}_{3} O_{4}$ colloidal nanoparticles

I. Hrianca; C. Caizer; Z. Schlett

J. Appl. Phys. 92, 2125–2132 (2002) https://doi.org/10.1063/1.1493654

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Substrate bias effect on the formation of nanocrystalline diamond films by microwave plasma-enhanced chemical vapor deposition

Tien-Syh Yang; Jir-Yon Lai; Ming-Show Wong; Chia-Liang Cheng

J. Appl. Phys. 92, 2133–2138 (2002) https://doi.org/10.1063/1.1492864

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Polarity dependence in pulsed scanning tunneling microscopy fabrication and modification of metal nanodots on silicon

Jeong Young Park; R. J. Phaneuf

J. Appl. Phys. 92, 2139–2143 (2002) https://doi.org/10.1063/1.1495889

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DEVICE PHYSICS (PACS 85)

Scanning capacitance microscopy with ${ZrO}_{2}$ as dielectric material

W. Brezna; S. Harasek; E. Bertagnolli; E. Gornik; J. Smoliner; H. Enichlmair

J. Appl. Phys. 92, 2144–2148 (2002) https://doi.org/10.1063/1.1495075

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APPLIED BIOPHYSICS (PACS 87)

The convergence condition of the successive approximation process in Compton scattering tomography

Jiajun Wang; Xianwu Huang; Xingrong Zhong

J. Appl. Phys. 92, 2149–2152 (2002) https://doi.org/10.1063/1.1494112

Abstract

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Subpicosecond laser ablation of dental enamel

A. V. Rode; E. G. Gamaly; B. Luther-Davies; B. T. Taylor; J. Dawes; A. Chan; R. M. Lowe; P. Hannaford

J. Appl. Phys. 92, 2153–2158 (2002) https://doi.org/10.1063/1.1495896

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

A gas-spring system for optimizing loudspeakers in thermoacoustic refrigerators

M. E. H. Tijani; J. C. H. Zeegers; A. T. A. M. de Waele

J. Appl. Phys. 92, 2159–2165 (2002) https://doi.org/10.1063/1.1492867

Abstract

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Conduction-induced oxidation of silicon on silver metaphosphate glass

Akira Doi

J. Appl. Phys. 92, 2166–2171 (2002) https://doi.org/10.1063/1.1494849

Abstract

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$H_{2} S$ gas sensing mechanism of ${SnO}_{2}$ films with ultrathin CuO dotted islands

Arijit Chowdhuri; Parmanand Sharma; Vinay Gupta; K. Sreenivas; K. V. Rao

J. Appl. Phys. 92, 2172–2180 (2002) https://doi.org/10.1063/1.1490154

Abstract

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Combined molecular dynamics–direct simulation Monte Carlo computational study of laser ablation plume evolution

Michael I. Zeifman; Barbara J. Garrison; Leonid V. Zhigilei

J. Appl. Phys. 92, 2181–2193 (2002) https://doi.org/10.1063/1.1494129

Abstract

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Electron emission from N-doped homoepitaxially grown diamond

Ken Okano; Takaaki Kamio; Takatoshi Yamada; Atsuhito Sawabe; Satoshi Koizumi

J. Appl. Phys. 92, 2194–2197 (2002) https://doi.org/10.1063/1.1494842

Abstract

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Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the ${Si/SiO}_{2}$ interface of metal–oxide–semiconductor devices

Henryk M. Przewlocki; Hisham Z. Massoud

J. Appl. Phys. 92, 2198–2201 (2002) https://doi.org/10.1063/1.1489499

Abstract

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Effects of stress annealing in nitrogen on the index of refraction of silicon dioxide layers in metal–oxide–semiconductor devices

Hisham Z. Massoud; Henryk M. Przewlocki

J. Appl. Phys. 92, 2202–2206 (2002) https://doi.org/10.1063/1.1489500

Abstract

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COMMUNICATIONS

Resonant optical microcavity based on crystalline silicon active layer

D. Sotta; E. Hadji; N. Magnea; E. Delamadeleine; P. Besson; P. Renard; H. Moriceau

J. Appl. Phys. 92, 2207–2209 (2002) https://doi.org/10.1063/1.1494841

Abstract

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Indium–tin–oxide-coated glass as dichroic mirror for far-infrared electromagnetic radiation

T. Bauer; J. S. Kolb; T. Löffler; E. Mohler; H. G. Roskos; U. C. Pernisz

J. Appl. Phys. 92, 2210–2212 (2002) https://doi.org/10.1063/1.1493650

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Ferroelectric properties of vanadium-doped ${Bi}_{4} {Ti}_{3} O_{12}$ thin films deposited by a sol–gel method

S. S. Kim; T. K. Song; J. K. Kim; Jinheung Kim

J. Appl. Phys. 92, 2213–2215 (2002) https://doi.org/10.1063/1.1494840

Abstract

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Reduced chemical sputtering of carbon by silicon doping

E. Salonen; K. Nordlund; J. Keinonen; N. Runeberg; C. H. Wu

J. Appl. Phys. 92, 2216–2218 (2002) https://doi.org/10.1063/1.1495886

Abstract

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ERRATA

Erratum: “Spatially resolved photoconductive properties of profiled polycrystalline silicon thin films” [J. Appl. Phys. 91, 5671 (2002)]

Tom J. Savenije; Patrick A. T. T. van Veenendaal; Matthijs P. de Haas; John M. Warman; Jatindra K. Rath; Ruud E. I. Schropp

J. Appl. Phys. 92, 2219 (2002) https://doi.org/10.1063/1.1494106

Abstract

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

APPLIED BIOPHYSICS (PACS 87)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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