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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Efficient energy transfer in organic thin films—implications for organic lasers

A. K. Sheridan; A. R. Buckley; A. M. Fox; A. Bacher; D. D. C. Bradley; I. D. W. Samuel

J. Appl. Phys. 92, 6367–6371 (2002) https://doi.org/10.1063/1.1516270

Abstract

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Au-II 282 nm segmented hollow-cathode laser-parametric studies and modeling

G. Bánó; L. Szalai; P. Horváth; K. Kutasi; Z. Donkó; K. Rózsa; T. M. Adamowicz

J. Appl. Phys. 92, 6372–6383 (2002) https://doi.org/10.1063/1.1510172

Abstract

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Electro-optical response of reflected light from freely suspended smectic liquid-crystal films

Kazuyuki Nakano; Masanori Ozaki; Katsumi Yoshino

J. Appl. Phys. 92, 6384–6389 (2002) https://doi.org/10.1063/1.1518761

Abstract

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Second harmonic generation from copper-tetratert-butyl-phthalocyanine Langmuir–Blodgett film/metal interface: Electric quadrupole or electric field induced second harmonic generation effect?

Cheng-Quan Li; Takaaki Manaka; Xiao-Man Cheng; Mitsumasa Iwamoto

J. Appl. Phys. 92, 6390–6398 (2002) https://doi.org/10.1063/1.1518764

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Separation of radiation and absorption losses in two-dimensional photonic crystal single defect cavities

I. Alvarado-Rodriguez; E. Yablonovitch

J. Appl. Phys. 92, 6399–6402 (2002) https://doi.org/10.1063/1.1516835

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Intervalence band absorption loss coefficients of the active layer for InGaAs/InGaAsP multiple quantum well laser diodes

Syouichi Kakimoto

J. Appl. Phys. 92, 6403–6407 (2002) https://doi.org/10.1063/1.1521260

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Hybrid modeling network for a helium–argon–copper hollow cathode discharge used for laser applications

Annemie Bogaerts; Renaat Gijbels

J. Appl. Phys. 92, 6408–6422 (2002) https://doi.org/10.1063/1.1517751

Abstract

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Mass spectrometry in weakly ionized plasmas using a Gifford–McMahon cryocooled superconducting magnet

T. Murakami; T. Kaneko; J. Terashima; R. Hatakeyama; S. Murase; S. Shimamoto

J. Appl. Phys. 92, 6423–6427 (2002) https://doi.org/10.1063/1.1517729

Abstract

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Dynamic sheath model at pulsed-biased insulating substrates

Zhong-Ling Dai; You-Nian Wang

J. Appl. Phys. 92, 6428–6433 (2002) https://doi.org/10.1063/1.1517732

Abstract

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Modeling of glow discharge-induced fluid dynamics

W. Shyy; B. Jayaraman; A. Andersson

J. Appl. Phys. 92, 6434–6443 (2002) https://doi.org/10.1063/1.1515103

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Two-dimensional ion flux distributions in inductively coupled plasmas: Effect of adding electronegative gases to Ar

Tae Won Kim; Eray S. Aydil

J. Appl. Phys. 92, 6444–6450 (2002) https://doi.org/10.1063/1.1517733

Abstract

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Self-consistent three-dimensional model of dust particle transport and formation of Coulomb crystals in plasma processing reactors

Vivek Vyas; Gregory A. Hebner; Mark J. Kushner

J. Appl. Phys. 92, 6451–6460 (2002) https://doi.org/10.1063/1.1516865

Abstract

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Wave-sustained discharges in helium–argon gas mixtures

J. Berndt; K. Makasheva; H. Schlüter; A. Shivarova

J. Appl. Phys. 92, 6461–6470 (2002) https://doi.org/10.1063/1.1519339

Abstract

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Dynamics of laser-ablation Ti plasmas studied by laser-induced fluorescence imaging spectroscopy

K. Sasaki; S. Matsui; H. Ito; K. Kadota

J. Appl. Phys. 92, 6471–6476 (2002) https://doi.org/10.1063/1.1518135

Abstract

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Effect of low dose high energy $O^{3+}$ implantation on refractive index and linear electro-optic properties in X-cut ${LiNbO}_{3} :$ Planar optical waveguide formation and characterization

G. G. Bentini; M. Bianconi; M. Chiarini; L. Correra; C. Sada; P. Mazzoldi; N. Argiolas; M. Bazzan; R. Guzzi

J. Appl. Phys. 92, 6477–6483 (2002) https://doi.org/10.1063/1.1516843

Abstract

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Sensitive magneto-optical sensors for visualization of magnetic fields using garnet films of specific orientations

M. Klank; O. Hagedorn; M. Shamonin; H. Dötsch

J. Appl. Phys. 92, 6484–6488 (2002) https://doi.org/10.1063/1.1516839

Abstract

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Ion-irradiation induced hydrogen loss from polyethylene film

Akira Taniike; Naoyoshi Kubota; Masakatsu Takeuchi; Yuichi Furuyama; Akira Kitamura

J. Appl. Phys. 92, 6489–6494 (2002) https://doi.org/10.1063/1.1516251

Abstract

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Phase transformation and semiconductor-metal transition in thin films of ${VO}_{2}$ deposited by low-pressure metalorganic chemical vapor deposition

M. B. Sahana; G. N. Subbanna; S. A. Shivashankar

J. Appl. Phys. 92, 6495–6504 (2002) https://doi.org/10.1063/1.1518148

Abstract

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Solid-state laser induced microwave effects

J. Carl Leader; C. E. Larson; P. A. Treis

J. Appl. Phys. 92, 6505–6524 (2002) https://doi.org/10.1063/1.1516834

Abstract

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Formation of hydrogenated carbon nitride films by reactive sputtering

J. Wei

J. Appl. Phys. 92, 6525–6530 (2002) https://doi.org/10.1063/1.1518137

Abstract

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Deriving thermophysical properties of liquid Nb by containerless electrostatic levitation

Y. S. Sung; H. Takeya; K. Togano

J. Appl. Phys. 92, 6531–6536 (2002) https://doi.org/10.1063/1.1518753

Abstract

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Rapid synthesis of stable ZnO quantum dots

L. Mädler; W. J. Stark; S. E. Pratsinis

J. Appl. Phys. 92, 6537–6540 (2002) https://doi.org/10.1063/1.1518132

Abstract

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Characterization of the response of chromium-doped alumina screens in the vacuum ultraviolet using synchrotron radiation

K. J. McCarthy; A. Baciero; B. Zurro; U. Arp; C. Tarrio; T. B. Lucatorto; A. Moroño; P. Martín; E. R. Hodgson

J. Appl. Phys. 92, 6541–6545 (2002) https://doi.org/10.1063/1.1518133

Abstract

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Quantum dot formation by segregation enhanced CdSe reorganization

T. Passow; K. Leonardi; H. Heinke; D. Hommel; D. Litvinov; A. Rosenauer; D. Gerthsen; J. Seufert; G. Bacher; A. Forchel

J. Appl. Phys. 92, 6546–6552 (2002) https://doi.org/10.1063/1.1516248

Abstract

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Role of carbon in GaN

C. H. Seager; A. F. Wright; J. Yu; W. Götz

J. Appl. Phys. 92, 6553–6560 (2002) https://doi.org/10.1063/1.1518794

Abstract

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Many optical absorption peaks observed in electron-irradiated n-type Si

M. Suezawa; N. Fukata; T. Mchedlidze; A. Kasuya

J. Appl. Phys. 92, 6561–6566 (2002) https://doi.org/10.1063/1.1519343

Abstract

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Selective growth and associated faceting and lateral overgrowth of GaAs on a nanoscale limited area bounded by a ${SiO}_{2}$ mask in molecular beam epitaxy

S. C. Lee; K. J. Malloy; L. R. Dawson; S. R. J. Brueck

J. Appl. Phys. 92, 6567–6571 (2002) https://doi.org/10.1063/1.1512967

Abstract

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Structure of amorphous hydrogenated carbon films prepared by radio frequency plasma enhanced chemical vapor deposition. An analogy with the structure zone model developed for metals

B. Dumay; E. Finot; M. Theobald; O. Legaie; J. Durand; P. Baclet; J. P. Goudonnet

J. Appl. Phys. 92, 6572–6581 (2002) https://doi.org/10.1063/1.1518795

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Effect of group II impurity and group III native defect on disordering Cu–Pt type ordered structures in ${In}_{0.5} ({Al}_{x} {Ga}_{1−x})_{0.5} P$ layers

K. L. Chang; K. C. Hsieh; P. N. Grillot; R. D. Pai; J.-W. Huang; G. E. Höfler

J. Appl. Phys. 92, 6582–6589 (2002) https://doi.org/10.1063/1.1518760

Abstract

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The behavior of an epoxy resin under one-dimensional shock loading

J. C. F. Millett; N. K. Bourne; N. R. Barnes

J. Appl. Phys. 92, 6590–6594 (2002) https://doi.org/10.1063/1.1506389

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Spontaneous emission in highly excited semiconductors: Saturation of the radiative recombination rate

G. Bourdon; I. Robert; I. Sagnes; I. Abram

J. Appl. Phys. 92, 6595–6600 (2002) https://doi.org/10.1063/1.1519344

Abstract

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Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films

V. V. Chaldyshev; Fred H. Pollak; M. Pophristic; S. P. Guo; I. Ferguson

J. Appl. Phys. 92, 6601–6606 (2002) https://doi.org/10.1063/1.1519342

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Glass-forming ability and crystallization behavior of ${Co}_{62−x} {Fe}_{x} {Nb}_{6} {Zr}_{2} B_{30}$ $(x=0,16)$ amorphous alloys with large supercooled liquid region

J. M. Borrego; C. F. Conde; A. Conde; S. Roth; H. Grahl; A. Ostwald; J. Eckert

J. Appl. Phys. 92, 6607–6611 (2002) https://doi.org/10.1063/1.1518768

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High-temperature tensile tests and activation volume measurement of free-standing submicron Al films

A. J. Kalkman; A. H. Verbruggen; S. Radelaar

J. Appl. Phys. 92, 6612–6615 (2002) https://doi.org/10.1063/1.1518783

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Reduction of shock-wave data with mean-field potential approach

Yi Wang; Rajeev Ahuja; Börje Johansson

J. Appl. Phys. 92, 6616–6620 (2002) https://doi.org/10.1063/1.1518781

Abstract

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Morphology of KI Adsorbates on Si(111) and Si(100) Surfaces

Hansheng Guo; R. Souda

J. Appl. Phys. 92, 6621–6624 (2002) https://doi.org/10.1063/1.1518780

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Formation of the photoluminescence Cu center on in-diffusion and out-diffusion of Cu in dilute Cu-contaminated silicon crystals

Minoru Nakamura

J. Appl. Phys. 92, 6625–6629 (2002) https://doi.org/10.1063/1.1521515

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Electron-beam dissociation of the MgH complex in p-type GaN

S. M. Myers; C. H. Seager; A. F. Wright; B. L. Vaandrager; J. S. Nelson

J. Appl. Phys. 92, 6630–6635 (2002) https://doi.org/10.1063/1.1515128

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current

W. K. Chim; Y. N. Tan

J. Appl. Phys. 92, 6636–6645 (2002) https://doi.org/10.1063/1.1516266

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Control of point defects and space charge in electroluminescent ZnS:Mn thin films

J. S. Lewis; M. R. Davidson; P. H. Holloway

J. Appl. Phys. 92, 6646–6657 (2002) https://doi.org/10.1063/1.1516625

Abstract

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Determination of the valence band dispersions for ${Bi}_{2} {Se}_{3}$ using angle resolved photoemission

V. A. Greanya; W. C. Tonjes; Rong Liu; C. G. Olson; D.-Y. Chung; M. G. Kanatzidis

J. Appl. Phys. 92, 6658–6661 (2002) https://doi.org/10.1063/1.1517748

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Electron and hole transport through quantum dots

Shu-Shen Li; Ahmad Abliz; Fu-Hua Yang; Zhi-Chuan Niu; Song-Lin Feng; Jian-Bai Xia; Kenji Hirose

J. Appl. Phys. 92, 6662–6665 (2002) https://doi.org/10.1063/1.1518754

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Raman and cathodoluminescence study of dislocations in GaN

H. Lei; H. S. Leipner; J. Schreiber; J. L. Weyher; T. Wosiński; I. Grzegory

J. Appl. Phys. 92, 6666–6670 (2002) https://doi.org/10.1063/1.1518793

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X-ray photoemission determination of the Schottky barrier height of metal contacts to n–GaN and p–GaN

K. A. Rickert; A. B. Ellis; Jong Kyu Kim; Jong-Lam Lee; F. J. Himpsel; F. Dwikusuma; T. F. Kuech

J. Appl. Phys. 92, 6671–6678 (2002) https://doi.org/10.1063/1.1518129

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Origin of microwave noise from an n-channel metal–oxide–semiconductor field effect transistor

Luigi Pantisano; K. P. Cheung

J. Appl. Phys. 92, 6679–6683 (2002) https://doi.org/10.1063/1.1518763

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Origin of the contrasting effects of oxygen reduction on the transport properties of ${La}_{1−Δ} {MnO}_{3+δ}$ and ${La}_{1−x} M_{x} {MnO}_{3+δ}$ (M:Ca,Sr) thin films

Keikichi Nakamura; Keiichi Ogawa

J. Appl. Phys. 92, 6684–6692 (2002) https://doi.org/10.1063/1.1519335

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Single-ion anisotropy in compounds of rare earths other than Sm: Importance of J-mixing in the room-temperature range

M. D. Kuz’min

J. Appl. Phys. 92, 6693–6698 (2002) https://doi.org/10.1063/1.1513876

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Magnetization reversal of the ferromagnetic layer in IrMn/CoFe bilayers

Y. G. Wang; A. K. Petford-Long

J. Appl. Phys. 92, 6699–6707 (2002) https://doi.org/10.1063/1.1518769

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Large cyclic deformation of a Ni-Mn-Ga shape memory alloy induced by magnetic fields

P. Müllner; V. A. Chernenko; M. Wollgarten; G. Kostorz

J. Appl. Phys. 92, 6708–6713 (2002) https://doi.org/10.1063/1.1513875

Abstract

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Signal-to-noise deterioration in perpendicular storage media by thermal and magnetic field aging as determined by magnetic force microscopy

Erik B. Svedberg; Sakhrat Khizroev; Chunghee H. Chang; Dmitri Litvinov

J. Appl. Phys. 92, 6714–6720 (2002) https://doi.org/10.1063/1.1518767

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Magnetization of ferromagnetic material surfaces by tribological process

H. Mishina

J. Appl. Phys. 92, 6721–6727 (2002) https://doi.org/10.1063/1.1519340

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Microwave and magnetic properties of double-sided hexaferrite films on (111) magnesium oxide substrates

S. G. Wang; S. D. Yoon; C. Vittoria

J. Appl. Phys. 92, 6728–6732 (2002) https://doi.org/10.1063/1.1517749

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Variation in material parameters for hexagonal barium ferrite films on (111) magnesium oxide as a function of oxygen pressure

S. D. Yoon; C. Vittoria; S. A. Oliver

J. Appl. Phys. 92, 6733–6738 (2002) https://doi.org/10.1063/1.1521525

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Improvement in ${Al}_{2} O_{3}$ dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique

J. B. Kim; D. R. Kwon; K. Chakrabarti; Chongmu Lee; K. Y. Oh; J. H. Lee

J. Appl. Phys. 92, 6739–6742 (2002) https://doi.org/10.1063/1.1515951

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Modeling dielectric properties of composites by finite-element method

Ivan Krakovský; Viktor Myroshnychenko

J. Appl. Phys. 92, 6743–6748 (2002) https://doi.org/10.1063/1.1516837

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Dielectric relaxation behavior and its relation to microstructure in relaxor ferroelectric polymers: High-energy electron irradiated poly(vinylidene fluoride–trifluoroethylene) copolymers

Z.-Y. Cheng; Q. M. Zhang; Fred B. Bateman

J. Appl. Phys. 92, 6749–6755 (2002) https://doi.org/10.1063/1.1518130

Abstract

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Fatigue in artificially layered $Pb (Zr, Ti) O_{3}$ ferroelectric films

A. Q. Jiang; J. F. Scott; M. Dawber; C. Wang

J. Appl. Phys. 92, 6756–6761 (2002) https://doi.org/10.1063/1.1516841

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Depth profile study of ferroelectric ${PbZr}_{0.2} {Ti}_{0.8} O_{3}$ films

Y. Li; V. Nagarajan; S. Aggarwal; R. Ramesh; L. G. Salamanca-Riba; L. J. Martı́nez-Miranda

J. Appl. Phys. 92, 6762–6767 (2002) https://doi.org/10.1063/1.1513195

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Ferroelectricity of one-axis-preferred-oriented polycrystalline $Pb (Zr,Ti) O_{3}$ films prepared by pulsed-metalorganic chemical vapor deposition

Hiroshi Funakubo; Masanori Aratani; Takahiro Oikawa; Kouji Tokita; Keisuke Saito

J. Appl. Phys. 92, 6768–6772 (2002) https://doi.org/10.1063/1.1513889

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Hydrogen-related mobile charge in the phosphosilicate glass– ${SiO}_{2} - Si$ structure

Elena Oborina; Scott Campbell; Andrew M. Hoff; Richard Gilbert; Eric Persson

J. Appl. Phys. 92, 6773–6777 (2002) https://doi.org/10.1063/1.1521514

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Modeling the role of oxygen vacancy on ferroelectric properties in thin films

Veng Cheong Lo

J. Appl. Phys. 92, 6778–6786 (2002) https://doi.org/10.1063/1.1520718

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NANOSCALE SCIENCE AND DESIGN

Formation of the charged exciton complexes in self-assembled InAs single quantum dots

E. S. Moskalenko; K. F. Karlsson; P. O. Holtz; B. Monemar; W. V. Schoenfeld; J. M. Garcia; P. M. Petroff

J. Appl. Phys. 92, 6787–6793 (2002) https://doi.org/10.1063/1.1516871

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Hydrogen passivation of self assembled InAs quantum dots

A. P. Jacob; Q. X. Zhao; M. Willander; F. Ferdos; M. Sadeghi; S. M. Wang

J. Appl. Phys. 92, 6794–6798 (2002) https://doi.org/10.1063/1.1515379

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Room temperature optical gain in CdSe nanorod solutions

Stephan Link; Mostafa A. El-Sayed

J. Appl. Phys. 92, 6799–6803 (2002) https://doi.org/10.1063/1.1512689

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Optical phonons in self-assembled Ge quantum dot superlattices: Strain relaxation effects

J. L. Liu; J. Wan; Z. M. Jiang; A. Khitun; K. L. Wang; D. P. Yu

J. Appl. Phys. 92, 6804–6808 (2002) https://doi.org/10.1063/1.1518756

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Magnetic properties of ${SiO}_{2}$ -coated Fe nanoparticles

Mingzhong Wu; Y. D. Zhang; S. Hui; T. D. Xiao; Shihui Ge; W. A. Hines; J. I. Budnick; M. J. Yacaman

J. Appl. Phys. 92, 6809–6812 (2002) https://doi.org/10.1063/1.1518757

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Photoluminescence study of InAs quantum dots embedded in GaNAs strain compensating layer grown by metalorganic-molecular-beam epitaxy

X. Q. Zhang; Sasikala Ganapathy; Hidekazu Kumano; Kasturi Uesugi; Ikuo Suemune

J. Appl. Phys. 92, 6813–6818 (2002) https://doi.org/10.1063/1.1516873

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Modeling of space-charge effects in nanocrystalline ceramics: The influence of geometry

Igor Lubomirsky; Juergen Fleig; Joachim Maier

J. Appl. Phys. 92, 6819–6827 (2002) https://doi.org/10.1063/1.1516836

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Room temperature visible photoluminescence from undoped ZnS nanoparticles embedded in ${SiO}_{2}$ matrices

Y. Zhu; C. L. Yuan; P. P. Ong

J. Appl. Phys. 92, 6828–6832 (2002) https://doi.org/10.1063/1.1516840

Abstract

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Preparation and magnetic properties of ${La}_{0.9} {Ca}_{0.1} {MnO}_{3}$ nanoparticles at 300 °C

Tianhao Ji; Jiye Fang; Volodymyr Golob; Jinke Tang; Charles J. O’Connor

J. Appl. Phys. 92, 6833–6836 (2002) https://doi.org/10.1063/1.1513880

Abstract

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DEVICE PHYSICS (PACS 85)

Near-field spectroscopic characterization of a 10 μm aperture selectively oxidized vertical cavity surface emitting laser

Aditi Sharma; Jan M. Yarrison-Rice; Howard E. Jackson; K. D. Choquette

J. Appl. Phys. 92, 6837–6844 (2002) https://doi.org/10.1063/1.1516624

Abstract

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Formation and thermal stability of ultra-shallow $p^{+}$ junctions in Si and ${Si}_{1−x}$ ${Ge}_{x}$ formed by molecular beam epitaxy

P. E. Thompson; J. Bennett

J. Appl. Phys. 92, 6845–6850 (2002) https://doi.org/10.1063/1.1518766

Abstract

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Eddy current losses in passive magnetic bearings

Olivier Bouty

J. Appl. Phys. 92, 6851–6856 (2002) https://doi.org/10.1063/1.1516874

Abstract

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A stable, single-chip, two-dimensional gradiometric device based on two superconducting quantum interference devices

Koichi Yokosawa; Daisuke Suzuki; Keiji Tsukada; Akira Tsukamoto

J. Appl. Phys. 92, 6857–6861 (2002) https://doi.org/10.1063/1.1519346

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

AlN growth kinetics during ion nitriding of aluminum

T. Fitz; W. Möller

J. Appl. Phys. 92, 6862–6867 (2002) https://doi.org/10.1063/1.1516622

Abstract

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Hypersonic characterization of sound propagation velocity in ${Al}_{x} {Ga}_{1−x} N$ thin films

R. J. Jiménez Riobóo; E. Rodrı́guez-Cañas; M. Vila; C. Prieto; F. Calle; T. Palacios; M. A. Sánchez; F. Omnès; O. Ambacher; B. Assouar; O. Elmazria

J. Appl. Phys. 92, 6868–6874 (2002) https://doi.org/10.1063/1.1517728

Abstract

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Mechanical property of electrorheological fluid under step compression

Yu Tian; Yonggang Meng; Hairong Mao; Shizhu Wen

J. Appl. Phys. 92, 6875–6879 (2002) https://doi.org/10.1063/1.1518752

Abstract

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Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy

S. W. Lee; H. C. Chen; L. J. Chen; Y. H. Peng; C. H. Kuan; H. H. Cheng

J. Appl. Phys. 92, 6880–6885 (2002) https://doi.org/10.1063/1.1516842

Abstract

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Studies of the plume accompanying pulsed ultraviolet laser ablation of zinc oxide

Frederik Claeyssens; Andrew Cheesman; Simon J. Henley; Michael N. R. Ashfold

J. Appl. Phys. 92, 6886–6894 (2002) https://doi.org/10.1063/1.1518782

Abstract

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Properties of amorphous Al–Yb alloy coating for scanning near-field optical microscopy tips

K. F. Liang; P. Grütter

J. Appl. Phys. 92, 6895–6899 (2002) https://doi.org/10.1063/1.1518762

Abstract

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Parametric analysis of micromachined reflex klystrons for operation at millimeter and submillimeter wavelengths

J. Garcı́a-Garcı́a; F. Martı́n; R. E. Miles; D. P. Steenson; J. M. Chamberlain; J. R. Fletcher; J. R. Thorpe

J. Appl. Phys. 92, 6900–6904 (2002) https://doi.org/10.1063/1.1519955

Abstract

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Frequency response of quartz crystal shear-resonator during an adhesive, elastic contact in a surface forces apparatus

Steffen Berg; Diethelm Johannsmann; Marina Ruths

J. Appl. Phys. 92, 6905–6910 (2002) https://doi.org/10.1063/1.1518755

Abstract

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Focusing neutrons with tapered capillary optics

D. F. R. Mildner; H. H. Chen-Mayer; W. M. Gibson

J. Appl. Phys. 92, 6911–6917 (2002) https://doi.org/10.1063/1.1519953

Abstract

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COMMUNICATIONS

Microwave measurements of the photonic band gap in a two-dimensional photonic crystal slab

J. M. Hickmann; D. Solli; C. F. McCormick; R. Plambeck; R. Y. Chiao

J. Appl. Phys. 92, 6918–6920 (2002) https://doi.org/10.1063/1.1518162

Abstract

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Electron temperature and mechanisms of hot carrier generation in quantum cascade lasers

P. Harrison; D. Indjin; R. W. Kelsall

J. Appl. Phys. 92, 6921–6923 (2002) https://doi.org/10.1063/1.1517747

Abstract

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Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation

M. J. Mitchell; P. Ashburn; P. L. F. Hemment

J. Appl. Phys. 92, 6924–6926 (2002) https://doi.org/10.1063/1.1518770

Abstract

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Dimensional crossover in cylindrical quantum-box structures formed by penetrable barriers

Satofumi Souma; Seung Joo Lee; Nammee Kim; Tae Won Kang

J. Appl. Phys. 92, 6927–6929 (2002) https://doi.org/10.1063/1.1520717

Abstract

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Photoconductive Z-scan measurement of multiphoton absorption in GaN

V. Pačebutas; A. Krotkus; T. Suski; P. Perlin; M. Leszczynski

J. Appl. Phys. 92, 6930–6932 (2002) https://doi.org/10.1063/1.1519333

Abstract

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Interfacial structure in $α− {Fe/Sm}_{2} (Fe,Si)_{17} C_{x}$ nanocomposites prepared by crystallization of amorphous alloy

X. Y. Zhang; Y. Guan; J. W. Zhang

J. Appl. Phys. 92, 6933–6935 (2002) https://doi.org/10.1063/1.1518750

Abstract

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Infrared-to-violet upconversion from ${Yb}^{3+}$ and ${Er}^{3+}$ codoped amorphous fluoride film prepared by pulsed laser deposition

Guanshi Qin; Weiping Qin; Shihua Huang; Changfeng Wu; Dan Zhao; Baojiu Chen; Shaozhe Lu; E. Shulin

J. Appl. Phys. 92, 6936–6938 (2002) https://doi.org/10.1063/1.1521801

Abstract

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Temperature dependence of the band gap of GaAsSb epilayers

R. Lukic-Zrnic; B. P. Gorman; R. J. Cottier; T. D. Golding; C. L. Littler; A. G. Norman

J. Appl. Phys. 92, 6939–6941 (2002) https://doi.org/10.1063/1.1517746

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ERRATA

Erratum: “Stability of ${ZrO}_{2}$ layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures” [J. Appl. Phys. 92, 82 (2002)]

Susanne Stemmer; Zhiqiang Chen; Ralf Keding; Jon-Paul Maria; Dwi Wicaksana; Angus I. Kingon

J. Appl. Phys. 92, 6942 (2002) https://doi.org/10.1063/1.1519098

Abstract

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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