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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Estimate of spontaneous emission coupling factor for GaAs quantum well embedded in planar microcavities with Bragg mirrors

Hong-Dong Zhao; Xiao-Guang Zhu; Yi-Mo Zhang

J. Appl. Phys. 92, 1–3 (2002) https://doi.org/10.1063/1.1479748

Abstract

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Fabrication and mechanical behavior of dye-doped polymer optical fiber

Changhong Jiang; Mark G. Kuzyk; Jow-Lian Ding; William E. Johns; David J. Welker

J. Appl. Phys. 92, 4–12 (2002) https://doi.org/10.1063/1.1481774

Abstract

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Impact of the defects on the electrical and optical properties of AlGaN ultraviolet photodetectors

M. Hanzaz; A. Bouhdada; P. Gibart; F. Omnès

J. Appl. Phys. 92, 13–18 (2002) https://doi.org/10.1063/1.1481211

Abstract

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Fully leaky guided mode study of the flexoelectric effect and surface polarization in hybrid aligned nematic cells

S. A. Jewell; J. R. Sambles

J. Appl. Phys. 92, 19–24 (2002) https://doi.org/10.1063/1.1483392

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Nonequilibrium excited-state distribution of atoms in dense mercury plasmas

Dimitrios Karabourniotis

J. Appl. Phys. 92, 25–31 (2002) https://doi.org/10.1063/1.1481781

Abstract

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Emission spectrometry diagnostic of sputtered titanium in magnetron amplified discharges

C. Nouvellon; S. Konstantinidis; J. P. Dauchot; M. Wautelet; P. Y. Jouan; A. Ricard; M. Hecq

J. Appl. Phys. 92, 32–36 (2002) https://doi.org/10.1063/1.1481780

Abstract

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Large fluorocarbon ions can contribute to film growth during plasma etching of silicon

Erick R. Fuoco; Luke Hanley

J. Appl. Phys. 92, 37–44 (2002) https://doi.org/10.1063/1.1483372

Abstract

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Numerical simulation of metal-halide lamp using a time-dependent two-dimensional model

S. Hashiguchi; K. Hatase; S. Mori; K. Tachibana

J. Appl. Phys. 92, 45–54 (2002) https://doi.org/10.1063/1.1486255

Abstract

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Comparison of surface interactions for NH and ${NH}_{2}$ on polymer and metal substrates during ${NH}_{3}$ plasma processing

Michelle L. Steen; Kristen R. Kull; Ellen R. Fisher

J. Appl. Phys. 92, 55–63 (2002) https://doi.org/10.1063/1.1486038

Abstract

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Tin whiskers studied by focused ion beam imaging and transmission electron microscopy

George T. T. Sheng; C. F. Hu; W. J. Choi; K. N. Tu; Y. Y. Bong; Luu Nguyen

J. Appl. Phys. 92, 64–69 (2002) https://doi.org/10.1063/1.1481202

Abstract

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Strain field and chemical composition determination of InGaN/GaN and AlGaN/GaN multiple quantum wells grown on SiC substrates

M. A. Tagliente; L. De Caro; L. Tapfer; P. Waltereit; O. Brandt; K.-H. Ploog

J. Appl. Phys. 92, 70–76 (2002) https://doi.org/10.1063/1.1478789

Abstract

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Luminescence associated with copper in ${ZnGeP}_{2}$

Lijun Wang; Lihua Bai; K. T. Stevens; N. Y. Garces; N. C. Giles; S. D. Setzler; P. G. Schunemann; T. M. Pollak

J. Appl. Phys. 92, 77–81 (2002) https://doi.org/10.1063/1.1481971

Abstract

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Stability of ${ZrO}_{2}$ layers on Si (001) during high-temperature anneals under reduced oxygen partial pressures

Susanne Stemmer; Zhiqiang Chen; Ralf Keding; Jon-Paul Maria; Dwi Wicaksana; Angus I. Kingon

J. Appl. Phys. 92, 82–86 (2002) https://doi.org/10.1063/1.1481970

Abstract

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Energy transfer in polymer electrophosphorescent light emitting devices with single and multiple doped luminescent layers

Yuichiro Kawamura; Shozo Yanagida; Stephen R. Forrest

J. Appl. Phys. 92, 87–93 (2002) https://doi.org/10.1063/1.1479751

Abstract

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Structural and electrical characterization of AuTiAlTi/AlGaN/GaN ohmic contacts

M. W. Fay; G. Moldovan; P. D. Brown; I. Harrison; J. C. Birbeck; B. T. Hughes; M. J. Uren; T. Martin

J. Appl. Phys. 92, 94–100 (2002) https://doi.org/10.1063/1.1481960

Abstract

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Lattice strain and lattice expansion of the ${SrRuO}_{3}$ layers in ${SrRuO}_{3} / {PbZr}_{0.52} {Ti}_{0.48} O_{3} / {SrRuO}_{3}$ multilayer thin films

C. L. Jia; J. Rodrı́guez Contreras; U. Poppe; H. Kohlstedt; R. Waser; K. Urban

J. Appl. Phys. 92, 101–105 (2002) https://doi.org/10.1063/1.1483369

Abstract

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Detection of water-ice transition using a lead zirconate titanate/brass transducer

Xiaoping Li; Wan Y. Shih; James Vartuli; David L. Milius; Robert Prud’homme; Ilhan A. Aksay; Wei-Heng Shih

J. Appl. Phys. 92, 106–111 (2002) https://doi.org/10.1063/1.1481191

Abstract

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Spectroscopy of ${Tm}^{3+}$ -doped tellurite glasses for 1470 nm fiber amplifier

Elizabeth R. Taylor; Li Na Ng; Neil P. Sessions; Herbert Buerger

J. Appl. Phys. 92, 112–117 (2002) https://doi.org/10.1063/1.1483391

Abstract

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Strain in cracked AlGaN layers

S. Einfeldt; M. Dießelberg; H. Heinke; D. Hommel; D. Rudloff; J. Christen; R. F. Davis

J. Appl. Phys. 92, 118–123 (2002) https://doi.org/10.1063/1.1481969

Abstract

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Transport and magnetic properties of ${Ca}_{3−x} {Sr}_{x} {Co}_{4} O_{9}$

L. B. Wang; A. Maignan; D. Pelloquin; S. Hébert; B. Raveau

J. Appl. Phys. 92, 124–128 (2002) https://doi.org/10.1063/1.1482428

Abstract

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Effect of unintentionally introduced oxygen on the electron–cyclotron resonance chemical-vapor deposition of ${SiN}_{X}$ films

P. Cova; R. A. Masut; O. Grenier; S. Poulin

J. Appl. Phys. 92, 129–138 (2002) https://doi.org/10.1063/1.1483902

Abstract

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Determination of carrier concentration in n-ZnSe by reflectance difference spectroscopy: Experimental results and model calculation

N. Kumagai; T. Hanada; T. Yao; T. Yasuda

J. Appl. Phys. 92, 139–143 (2002) https://doi.org/10.1063/1.1483917

Abstract

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Modeling of thermal stresses in passivated interconnects

Chun-Hway Hsueh

J. Appl. Phys. 92, 144–153 (2002) https://doi.org/10.1063/1.1483382

Abstract

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Postgrowth annealing effect on structural and optical properties of ZnO films grown on GaAs substrates by the radio frequency magnetron sputtering technique

M. K. Ryu; S. H. Lee; M. S. Jang; G. N. Panin; T. W. Kang

J. Appl. Phys. 92, 154–158 (2002) https://doi.org/10.1063/1.1483371

Abstract

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Transverse shock wave demagnetization of ${Nd}_{2} {Fe}_{14} B$ high-energy hard ferromagnetics

Sergey I. Shkuratov; Evgueni F. Talantsev; James C. Dickens; Magne Kristiansen

J. Appl. Phys. 92, 159–162 (2002) https://doi.org/10.1063/1.1480478

Abstract

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Optical determination of the dopant concentration in the δ-doping layer

Aneta Drabińska; A. Babiński; T. Tomaszewicz; R. Bozek; J. M. Baranowski

J. Appl. Phys. 92, 163–167 (2002) https://doi.org/10.1063/1.1484226

Abstract

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Resistivity and Hall voltage study of phosphorus segregation in polycrystalline ${Si}_{1−x} {Ge}_{x}$ films

W. Qin; D. G. Ast; T. I. Kamins

J. Appl. Phys. 92, 168–172 (2002) https://doi.org/10.1063/1.1483923

Abstract

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Subthreshold carrier losses from GaInP quantum wells measured by time resolved photoluminescence

J. Dekker; M. Dumitrescu; A. Tukiainen; S. Orsila; P. Uusimaa; M. Pessa; N. V. Tkachenko; H. Lemmetyinen

J. Appl. Phys. 92, 173–179 (2002) https://doi.org/10.1063/1.1459743

Abstract

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Range of validity of McCumber theory in relating absorption and emission cross sections

R. S. Quimby

J. Appl. Phys. 92, 180–187 (2002) https://doi.org/10.1063/1.1485112

Abstract

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Grown-in defects in nitrogen-doped Czochralski silicon

Xuegong Yu; Deren Yang; Xiangyang Ma; Jiansong Yang; Liben Li; Duanlin Que

J. Appl. Phys. 92, 188–194 (2002) https://doi.org/10.1063/1.1481190

Abstract

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Method for evaluation of the emissivity spectrum of a localized vibrational absorption band

Hidetoshi Oheda

J. Appl. Phys. 92, 195–202 (2002) https://doi.org/10.1063/1.1486251

Abstract

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Detection and electrical characterization of hidden layers using time-domain analysis of terahertz reflections

I. Geltner; D. Hashimshony; A. Zigler

J. Appl. Phys. 92, 203–206 (2002) https://doi.org/10.1063/1.1486035

Abstract

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Self-consistent model for quantum well infrared photodetectors with thermionic injection under dark conditions

V. Ryzhii; M. Ryzhii; H. C. Liu

J. Appl. Phys. 92, 207–213 (2002) https://doi.org/10.1063/1.1484228

Abstract

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Interfacial reactions of Ni on ${Si}_{1−x} {Ge}_{x}$ $(x=0.2, 0.3)$ at low temperature by rapid thermal annealing

H. B. Zhao; K. L. Pey; W. K. Choi; S. Chattopadhyay; E. A. Fitzgerald; D. A. Antoniadis; P. S. Lee

J. Appl. Phys. 92, 214–217 (2002) https://doi.org/10.1063/1.1482423

Abstract

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Closed-form electric-field profile model for AlGaAs/GaAs heterostructures

Francisco Castro; Bahram Nabet; Xiying Chen

J. Appl. Phys. 92, 218–222 (2002) https://doi.org/10.1063/1.1478792

Abstract

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Interplay between GaN and AlN sublattices in wurtzite ${Al}_{x} {Ga}_{1−x} N$ alloys revealed by Raman spectroscopy

A. L. Alvarez; F. Calle; E. Monroy; J. L. Pau; M. A. Sanchez-Garcia; E. Calleja; E. Muñoz; F. Omnes; P. Gibart; P. R. Hageman

J. Appl. Phys. 92, 223–226 (2002) https://doi.org/10.1063/1.1478788

Abstract

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Synthesis of bulk ${In}_{2} O_{3} - {Sc}_{2} O_{3}$ and their transparent conducting oxide films

Syed B. Qadri; Heungsoo Kim

J. Appl. Phys. 92, 227–229 (2002) https://doi.org/10.1063/1.1479466

Abstract

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Thermal stability of dopants in laser annealed silicon

Y. Takamura; S. H. Jain; P. B. Griffin; J. D. Plummer

J. Appl. Phys. 92, 230–234 (2002) https://doi.org/10.1063/1.1481975

Abstract

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Physical processes associated with the deactivation of dopants in laser annealed silicon

Y. Takamura; P. B. Griffin; J. D. Plummer

J. Appl. Phys. 92, 235–244 (2002) https://doi.org/10.1063/1.1481974

Abstract

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Effect of contact resistance in solid-state thermionic refrigeration

Marc D. Ulrich; Peter A. Barnes; Cronin B. Vining

J. Appl. Phys. 92, 245–247 (2002) https://doi.org/10.1063/1.1481777

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Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

N. E. I. Etteh; P. Harrison

J. Appl. Phys. 92, 248–252 (2002) https://doi.org/10.1063/1.1481214

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Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

S.-K. Lee; C.-M. Zetterling; M. Östling

J. Appl. Phys. 92, 253–260 (2002) https://doi.org/10.1063/1.1481201

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Materials issues for layered tunnel barrier structures

Julie D. Casperson; L. Douglas Bell; Harry A. Atwater

J. Appl. Phys. 92, 261–267 (2002) https://doi.org/10.1063/1.1479747

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Structure effects on electron-optical phonon interaction in ${GaAs/Al}_{x} {Ga}_{1−x} As$ quantum wells

H. C. Lee; K. W. Sun; C. P. Lee

J. Appl. Phys. 92, 268–273 (2002) https://doi.org/10.1063/1.1481963

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Investigation of transparent and conductive undoped ${Zn}_{2} {In}_{2} O_{5−x}$ films deposited on n-type GaN layers

Cheng-Yao Lo; Che-Lung Hsu; Qing-Xuan Yu; Hsin-Ying Lee; Ching-Ting Lee

J. Appl. Phys. 92, 274–280 (2002) https://doi.org/10.1063/1.1481207

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Valence band electronic structure of carbon nitride from x-ray photoelectron spectroscopy

Z. Y. Chen; J. P. Zhao; T. Yano; T. Ooie

J. Appl. Phys. 92, 281–287 (2002) https://doi.org/10.1063/1.1480481

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Electron transport in strained Si inversion layers grown on SiGe-on-insulator substrates

F. Gámiz; P. Cartujo-Cassinello; J. B. Roldán; F. Jiménez-Molinos

J. Appl. Phys. 92, 288–295 (2002) https://doi.org/10.1063/1.1481962

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Electronic properties of heteroepitaxial undoped and n-InSb epilayers using SnTe source by molecular beam epitaxy

T. A. Rawdanowicz; S. Iyer; W. C. Mitchel; A. Saxler; S. Elhamri

J. Appl. Phys. 92, 296–301 (2002) https://doi.org/10.1063/1.1476086

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Shape effects on scattering in three-dimensional quantum wires

Vassilios Vargiamidis; O. Valassiades

J. Appl. Phys. 92, 302–309 (2002) https://doi.org/10.1063/1.1481966

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Growth and characterization of radio frequency magnetron sputter-deposited zinc stannate, ${Zn}_{2} {SnO}_{4},$ thin films

David L. Young; Helio Moutinho; Yanfa Yan; Timothy J. Coutts

J. Appl. Phys. 92, 310–319 (2002) https://doi.org/10.1063/1.1483104

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Generation-recombination noise in highly asymmetrical $p–n$ junctions

J. A. Jiménez Tejada; A. Godoy; A. Palma; J. A. López Villanueva

J. Appl. Phys. 92, 320–329 (2002) https://doi.org/10.1063/1.1486252

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Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator

S. Scheinert; G. Paasch; M. Schrödner; H.-K. Roth; S. Sensfuß; Th. Doll

J. Appl. Phys. 92, 330–337 (2002) https://doi.org/10.1063/1.1486253

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High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

M. J. Manfra; N. G. Weimann; J. W. P. Hsu; L. N. Pfeiffer; K. W. West; S. Syed; H. L. Stormer; W. Pan; D. V. Lang; S. N. G. Chu; G. Kowach; A. M. Sergent; J. Caissie; K. M. Molvar; L. J. Mahoney; R. J. Molnar

J. Appl. Phys. 92, 338–345 (2002) https://doi.org/10.1063/1.1484227

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Hole transport in coupled SiGe quantum dots for quantum computation

Paul A. Cain; Haroon Ahmed; David A. Williams

J. Appl. Phys. 92, 346–350 (2002) https://doi.org/10.1063/1.1482425

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Influence of microstructures and crystalline defects on the superconductivity of ${MgB}_{2}$

A. Serquis; X. Z. Liao; Y. T. Zhu; J. Y. Coulter; J. Y. Huang; J. O. Willis; D. E. Peterson; F. M. Mueller; N. O. Moreno; J. D. Thompson; V. F. Nesterenko; S. S. Indrakanti

J. Appl. Phys. 92, 351–356 (2002) https://doi.org/10.1063/1.1479470

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Superconductor strip near a magnetic wall of finite thickness

Yu. A. Genenko; A. V. Snezhko

J. Appl. Phys. 92, 357–360 (2002) https://doi.org/10.1063/1.1480112

Abstract

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Microwave mixing in microbridges made from ${YBa}_{2} {Cu}_{3} O_{7−x}$ thin films

K. S. Il’in; M. Siegel

J. Appl. Phys. 92, 361–369 (2002) https://doi.org/10.1063/1.1481773

Abstract

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Formation and stability of small-size bubbles in garnet films

M. Ohkoshi

J. Appl. Phys. 92, 370–373 (2002) https://doi.org/10.1063/1.1484224

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Influence of Cr additions in magnetic properties and crystallization process of amorphous iron based alloys

P. Marin; M. Lopez; A. Hernando; Y. Iqbal; H. A. Davies; M. R. J. Gibbs

J. Appl. Phys. 92, 374–378 (2002) https://doi.org/10.1063/1.1485109

Abstract

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Crystallization and related magnetotransport properties of amorphous manganite films grown by metalorganic chemical vapor deposition

C. Dubourdieu; M. Audier; H. Roussel; J. P. Sénateur; J. Pierre

J. Appl. Phys. 92, 379–384 (2002) https://doi.org/10.1063/1.1483919

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Neutron diffraction studies of the magnetic phase transitions in ${Ce}_{2} {Fe}_{17}$ compound under pressure

O. Prokhnenko; C. Ritter; Z. Arnold; O. Isnard; J. Kamarád; A. Pirogov; A. Teplykh; A. Kuchin

J. Appl. Phys. 92, 385–391 (2002) https://doi.org/10.1063/1.1485111

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Ultrafast imaging of incoherent rotation magnetic switching with experimental and numerical micromagnetic dynamics

W. K. Hiebert; G. E. Ballentine; L. Lagae; R. W. Hunt; M. R. Freeman

J. Appl. Phys. 92, 392–396 (2002) https://doi.org/10.1063/1.1484225

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Supplementary Material

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Dependence of exchange bias energy on spin projections at $(La, Ca) {MnO}_{3}$ ferromagnetic/antiferromagnetic interfaces

C. Christides; N. Moutis; Ph. Komninou; Th. Kehagias; G. Nouet

J. Appl. Phys. 92, 397–405 (2002) https://doi.org/10.1063/1.1484230

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Axially dependent dielectric relaxation response of natural hydroxyapatite single crystals

Ioannis M. Kalogeras; Aglaia Vassilikou-Dova; Anna Katerinopoulou

J. Appl. Phys. 92, 406–414 (2002) https://doi.org/10.1063/1.1481776

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Leakage current conduction of pulsed excimer laser ablated ${BaBi}_{2} {Nb}_{2} O_{9}$ thin films

Apurba Laha; S. B. Krupanidhi

J. Appl. Phys. 92, 415–420 (2002) https://doi.org/10.1063/1.1473216

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Change of conduction mechanism by microstructural variation in $Pt /(Ba, Sr) {TiO}_{3} / Pt$ film capacitors

Kun Ho Ahn; Sang Sub Kim; Sunggi Baik

J. Appl. Phys. 92, 421–425 (2002) https://doi.org/10.1063/1.1484233

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Structural and electrical quality of the high-k dielectric $Y_{2} O_{3}$ on Si (001): Dependence on growth parameters

A. Dimoulas; G. Vellianitis; A. Travlos; V. Ioannou-Sougleridis; A. G. Nassiopoulou

J. Appl. Phys. 92, 426–431 (2002) https://doi.org/10.1063/1.1483379

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Thickness-dependent dielectric constants of $(Ba,Sr) {TiO}_{3}$ thin films with Pt or conducting oxide electrodes

Cheol Seong Hwang

J. Appl. Phys. 92, 432–437 (2002) https://doi.org/10.1063/1.1483105

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Generalized Weiss molecular-field basis for a phenomenological polarization model of lead magnesium niobate

Jean C. Piquette; Elizabeth A. McLaughlin; Wei Ren; Binu K. Mukherjee

J. Appl. Phys. 92, 438–443 (2002) https://doi.org/10.1063/1.1482429

Abstract

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Effective macroscopic symmetries and materials properties of multidomain $0.955 Pb ({Zn}_{1/3} {Nb}_{2/3}) O_{3} -0.045 {PbTiO}_{3}$ single crystals

Jianhua Yin; Wenwu Cao

J. Appl. Phys. 92, 444–448 (2002) https://doi.org/10.1063/1.1483918

Abstract

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Theoretical prediction of the dielectric spectrum of an antiferroelectric liquid crystal

L. A. Parry-Jones; S. J. Elston

J. Appl. Phys. 92, 449–455 (2002) https://doi.org/10.1063/1.1486029

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Investigation of the piezoelectric polarization in (In,Ga)N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy

P. Waltereit; M. D. Craven; S. P. DenBaars; J. S. Speck

J. Appl. Phys. 92, 456–460 (2002) https://doi.org/10.1063/1.1486259

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Temperature dependence of electrostriction in rhombohedral ${Pb(Zn}_{1/3} {Nb}_{2/3}) O_{3} - {PbTiO}_{3}$ single crystals

Shi-Fang Liu; Seung-Eek Park; L. Eric Cross; Thomas R. Shrout

J. Appl. Phys. 92, 461–467 (2002) https://doi.org/10.1063/1.1486028

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Optical properties of ${PbTiO}_{3},$ ${PbZr}_{x} {Ti}_{1−x} O_{3},$ and ${PbZrO}_{3}$ films deposited by metalorganic chemical vapor on ${SrTiO}_{3}$

M. P. Moret; M. A. C. Devillers; K. Wörhoff; P. K. Larsen

J. Appl. Phys. 92, 468–474 (2002) https://doi.org/10.1063/1.1486048

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Structure–property relationships in pure and acceptor-doped ${Ba}_{1−x} {Sr}_{x} {TiO}_{3}$ thin films for tunable microwave device applications

M. W. Cole; C. Hubbard; E. Ngo; M. Ervin; M. Wood; R. G. Geyer

J. Appl. Phys. 92, 475–483 (2002) https://doi.org/10.1063/1.1484231

Abstract

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NANOSCALE SCIENCE AND DESIGN

Donor impurity on-center and off-center in multilayered quantum wires in the presence of magnetic field

Cheng-Ying Hsieh

J. Appl. Phys. 92, 484–490 (2002) https://doi.org/10.1063/1.1480121

Abstract

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Structure and magnetic properties of ${SiO}_{2}$ -coated Co nanoparticles

Mingzhong Wu; Y. D. Zhang; S. Hui; T. D. Xiao; Shihui Ge; W. A. Hines; J. I. Budnick

J. Appl. Phys. 92, 491–495 (2002) https://doi.org/10.1063/1.1483393

Abstract

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Raman spectra of nanocrystalline carbon nitride synthesized on cobalt-covered substrate by nitrogen-atom-beam-assisted pulsed laser ablation

Ning Xu; Fuming Cui; Hao Lin; Zhifeng Ying; Jiada Wu; Yuancheng Du; Fuming Li

J. Appl. Phys. 92, 496–500 (2002) https://doi.org/10.1063/1.1483914

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Size-dependent magnetic properties of ${Mn}_{0.5} {Zn}_{0.5} {Fe}_{2} O_{4}$ nanoparticles in ${SiO}_{2}$ matrix

K. Mandal; S. Chakraverty; S. Pan Mandal; P. Agudo; M. Pal; D. Chakravorty

J. Appl. Phys. 92, 501–505 (2002) https://doi.org/10.1063/1.1483892

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Surface effects on shape, self-organization and photoluminescence of InAs islands grown on InAlAs/InP(001)

J. Brault; M. Gendry; G. Grenet; G. Hollinger; J. Olivares; B. Salem; T. Benyattou; G. Bremond

J. Appl. Phys. 92, 506–510 (2002) https://doi.org/10.1063/1.1481959

Abstract

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Photoluminescence study of self-assembled InAs/GaAs quantum dots covered by an InAlAs and InGaAs combination layer

Z. Y. Zhang; B. Xu; P. Jin; X. Q. Meng; Ch. M. Li; X. L. Ye; Z. G. Wang

J. Appl. Phys. 92, 511–514 (2002) https://doi.org/10.1063/1.1485113

Abstract

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Single-band envelope-function model in the full Brillouin zone for electronic structure calculation in semiconductor nanostructures

A. Mirčetić; Z. Ikonić; V. Milanović; D. Indjin

J. Appl. Phys. 92, 515–522 (2002) https://doi.org/10.1063/1.1483374

Abstract

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Formation and stabilization of nanosize grains in ferromagnetic thin films by dispersed $C_{60}$

Lingyi A. Zheng; Enrique V. Barrera; Robert D. Shull

J. Appl. Phys. 92, 523–530 (2002) https://doi.org/10.1063/1.1481204

Abstract

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DEVICE PHYSICS (PACS 85)

Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

Naoteru Shigekawa; Kenji Shiojima; Tetsuya Suemitsu

J. Appl. Phys. 92, 531–535 (2002) https://doi.org/10.1063/1.1481973

Abstract

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Analysis of polarization propagation along a semiconductor-based quantum cellular automaton chain

M. Girlanda; M. Macucci

J. Appl. Phys. 92, 536–542 (2002) https://doi.org/10.1063/1.1481778

Abstract

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Detection of magnetic data using a magnetooptic indicator

L. E. Helseth; E. I. Il’yashenko; M. Baziljevich; T. H. Johansen

J. Appl. Phys. 92, 543–548 (2002) https://doi.org/10.1063/1.1480479

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Electrical activation of high concentrations of $N^{+}$ and $P^{+}$ ions implanted into 4H–SiC

M. Laube; F. Schmid; G. Pensl; G. Wagner; M. Linnarsson; M. Maier

J. Appl. Phys. 92, 549–554 (2002) https://doi.org/10.1063/1.1479462

Abstract

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RF voltage modulations and the coupled bunch instabilities

M. H. Wang; S. Y. Lee

J. Appl. Phys. 92, 555–563 (2002) https://doi.org/10.1063/1.1482426

Abstract

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Ablative generation of surface acoustic waves in aluminum using ultraviolet laser pulses

J. P. Gospodyn; A. Sardarli; A. M. Brodnikovski; R. Fedosejevs

J. Appl. Phys. 92, 564–571 (2002) https://doi.org/10.1063/1.1479472

Abstract

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Structural and magnetic phase transformation in metastable Fe–Cr alloys induced by ion irradiation

E. Wieser; H. Reuther; F. Prokert; A. Gorbunov; A. Tselev; W. Pompe; A. A. Levin; D. C. Meyer; P. Paufler

J. Appl. Phys. 92, 572–577 (2002) https://doi.org/10.1063/1.1484234

Abstract

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Strain field and scattered intensity profiling with energy dispersive x-ray scattering

M. Croft; I. Zakharchenko; Z. Zhong; Y. Gurlak; J. Hastings; J. Hu; R. Holtz; M. DaSilva; T. Tsakalakos

J. Appl. Phys. 92, 578–586 (2002) https://doi.org/10.1063/1.1483373

Abstract

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Microcrystalline silicon thin films studied by atomic force microscopy with electrical current detection

B. Rezek; J. Stuchlı́k; A. Fejfar; J. Kočka

J. Appl. Phys. 92, 587–593 (2002) https://doi.org/10.1063/1.1486032

Abstract

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Ignition phenomena in combustion synthesis: An experimental methodology

M. Monagheddu; N. Bertolino; P. Giuliani; C. Zanotti; U. Anselmi Tamburini

J. Appl. Phys. 92, 594–599 (2002) https://doi.org/10.1063/1.1486254

Abstract

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An analytical approach to the determination of surface temperature history from subsurface data

J. Fivez; J. Thoen

J. Appl. Phys. 92, 600–604 (2002) https://doi.org/10.1063/1.1486058

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Bulk photothermal model for laser ablation of polymers by nanosecond and subpicosecond pulses

N. Bityurin; A. Malyshev

J. Appl. Phys. 92, 605–613 (2002) https://doi.org/10.1063/1.1486040

Abstract

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Intermixing-promoted scaling of Ge/Si(100) island sizes

M. De Seta; G. Capellini; F. Evangelisti; C. Spinella

J. Appl. Phys. 92, 614–619 (2002) https://doi.org/10.1063/1.1483370

Abstract

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Effect of plasma and thermal annealing on optical and electronic properties of ${SnO}_{2}$ substrates used for $a- Si$ solar cells

Steven S. Hegedus

J. Appl. Phys. 92, 620–626 (2002) https://doi.org/10.1063/1.1481192

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COMMUNICATIONS

“Direct” measurement of the growth rate during the C49 to C54 transformation in ${TiSi}_{2} :$ Activation energy

S. Privitera; F. La Via; S. Quilici; F. Meinardi; M. G. Grimaldi; E. Rimini

J. Appl. Phys. 92, 627–628 (2002) https://doi.org/10.1063/1.1483109

Abstract

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Polarized infrared spectroscopy at oblique incidence of optical phonons in ${In}_{1−x} {Ga}_{x} As$ epilayers on InP

N. L. Rowell; H. K. Shin; D. J. Lockwood; P. J. Poole

J. Appl. Phys. 92, 629–631 (2002) https://doi.org/10.1063/1.1483110

Abstract

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Photoinduced band-bending effect of low temperature GaAs on AlGaAs/InGaAs/GaAs modulation-doped transistors

Patrick A. Folkes; Godfrey Gumbs; Wen Xu

J. Appl. Phys. 92, 632–634 (2002) https://doi.org/10.1063/1.1483132

Abstract

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Direct measurement of contact temperature using Seebeck potential

C. N. Liao; K. N. Tu

J. Appl. Phys. 92, 635–637 (2002) https://doi.org/10.1063/1.1485107

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Pseudolinearity in the inverse dielectric susceptibility of poled $Pb ({Mg}_{1/3} {Nb}_{2/3}) O_{3} - {PbTiO}_{3}$ crystals

D. Viehland; J. F. Li

J. Appl. Phys. 92, 638–640 (2002) https://doi.org/10.1063/1.1483111

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Normal-incidence intersubband absorption in AlGaSb quantum wells

Jean-Marc Jancu; Franco Bassani; Paul Voisin

J. Appl. Phys. 92, 641–643 (2002) https://doi.org/10.1063/1.1482424

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Effects of air exposure on amorphous carbon nitride surfaces

J. M. Ripalda; N. Dı́az; I. Montero; F. Rueda; L. Galán

J. Appl. Phys. 92, 644–646 (2002) https://doi.org/10.1063/1.1486023

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

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