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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Transmission spectroscopy of photonic crystal based waveguides with resonant cavities

Jürgen Moosburger; Martin Kamp; Alfred Forchel; Ursula Oesterle; Romuald Houdré

J. Appl. Phys. 91, 4791–4794 (2002) https://doi.org/10.1063/1.1454199

Abstract

View articletitled, Transmission spectroscopy of photonic crystal based waveguides with resonant cavities

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In situ shrinkage measurement of holographic polymer dispersed liquid crystals

Jun Qi; Mousumi DeSarkar; Garfield T. Warren; Gregory P. Crawford

J. Appl. Phys. 91, 4795–4800 (2002) https://doi.org/10.1063/1.1459614

Abstract

View articletitled, In situ shrinkage measurement of holographic polymer dispersed liquid crystals

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Interdiffusion-based optimal quantum-well profile shaping for unipolar quantum-fountain lasers

Stanko Tomić; Zoran Ikonić; Vitomir Milanović

J. Appl. Phys. 91, 4801–4805 (2002) https://doi.org/10.1063/1.1464208

Abstract

View articletitled, Interdiffusion-based optimal quantum-well profile shaping for unipolar quantum-fountain lasers

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Measurement of Ar metastables near a dielectric surface in barrier and plasma display panel discharges

T. Sakurai; S. Matsuzawa; Y. Kamo

J. Appl. Phys. 91, 4806–4810 (2002) https://doi.org/10.1063/1.1456961

Abstract

View articletitled, Measurement of Ar metastables near a dielectric surface in barrier and plasma display panel discharges

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Determination of the ionization and acceleration zones in a stationary plasma thruster by optical spectroscopy study: Experiments and model

N. Dorval; J. Bonnet; J. P. Marque; E. Rosencher; S. Chable; F. Rogier; P. Lasgorceix

J. Appl. Phys. 91, 4811–4817 (2002) https://doi.org/10.1063/1.1458053

Abstract

View articletitled, Determination of the ionization and acceleration zones in a stationary plasma thruster by optical spectroscopy study: Experiments and model

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Ion extraction from a laser-ionized plasma produced between parallel plate cathodes and an anode above them

Hitoshi Kurosawa; Shuichi Hasegawa; Atsuyuki Suzuki

J. Appl. Phys. 91, 4818–4823 (2002) https://doi.org/10.1063/1.1454191

Abstract

View articletitled, Ion extraction from a laser-ionized plasma produced between parallel plate cathodes and an anode above them

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Ion flux from vacuum arc cathode spots in the absence and presence of a magnetic field

André Anders; George Yu. Yushkov

J. Appl. Phys. 91, 4824–4832 (2002) https://doi.org/10.1063/1.1459619

Abstract

View articletitled, Ion flux from vacuum arc cathode spots in the absence and presence of a magnetic field

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Experimental study on the feasibility of hot plasmas as stripping media for MeV heavy ions

K. Shibata; K. Tsubuku; T. Nishimoto; J. Hasegawa; M. Ogawa; Y. Oguri; A. Sakumi

J. Appl. Phys. 91, 4833–4839 (2002) https://doi.org/10.1063/1.1433175

Abstract

View articletitled, Experimental study on the feasibility of hot plasmas as stripping media for MeV heavy ions

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions

A. von Keudell; J. R. Abelson

J. Appl. Phys. 91, 4840–4845 (2002) https://doi.org/10.1063/1.1456963

Abstract

View articletitled, Advantages of the “optical cavity substrate” for real time infrared spectroscopy of plasma–surface interactions

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Spectroscopic properties of ${Co}^{2+}$ in related spinels

Dhiraj K. Sardar; John B. Gruber; Bahram Zandi; Michael Ferry; Milan R. Kokta

J. Appl. Phys. 91, 4846–4852 (2002) https://doi.org/10.1063/1.1455153

Abstract

View articletitled, Spectroscopic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi mathvariant="normal">2+</mi></mrow></msup></math> in related spinels

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Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells

Tuong Khanh Vu; Yoshio Ohshita; Kenji Araki; Masafumi Yamaguchi

J. Appl. Phys. 91, 4853–4856 (2002) https://doi.org/10.1063/1.1459609

Abstract

View articletitled, Generation and annihilation of boron–oxygen related defects in boron-doped Czochralski-grown Si solar cells

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Anisotropic elastic-stiffness coefficients of an amorphous Ni–P film

Hirotsugu Ogi; Goh Shimoike; Masahiko Hirao; Kazuki Takashima; Yakichi Higo

J. Appl. Phys. 91, 4857–4862 (2002) https://doi.org/10.1063/1.1457542

Abstract

View articletitled, Anisotropic elastic-stiffness coefficients of an amorphous Ni–P film

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Temperature stability of sputtered niobium–oxide films

S. Venkataraj; R. Drese; Ch. Liesch; O. Kappertz; R. Jayavel; M. Wuttig

J. Appl. Phys. 91, 4863–4871 (2002) https://doi.org/10.1063/1.1458052

Abstract

View articletitled, Temperature stability of sputtered niobium–oxide films

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Full characterization of the interface between the organic semiconductor copper phthalocyanine and gold

H. Peisert; M. Knupfer; T. Schwieger; J. M. Auerhammer; M. S. Golden; J. Fink

J. Appl. Phys. 91, 4872–4878 (2002) https://doi.org/10.1063/1.1459620

Abstract

View articletitled, Full characterization of the interface between the organic semiconductor copper phthalocyanine and gold

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Calculation of thermodynamic, electronic, and optical properties of monoclinic ${Mg}_{2} {NiH}_{4}$

W. R. Myers; L-W. Wang; T. J. Richardson; M. D. Rubin

J. Appl. Phys. 91, 4879–4885 (2002) https://doi.org/10.1063/1.1454206

Abstract

View articletitled, Calculation of thermodynamic, electronic, and optical properties of monoclinic <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">NiH</mi><mrow><mn>4</mn></mrow></msub></math>

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Effects of fluorine on structure, structural relaxation, and absorption edge in silica glass

K. Saito; A. J. Ikushima

J. Appl. Phys. 91, 4886–4890 (2002) https://doi.org/10.1063/1.1459102

Abstract

View articletitled, Effects of fluorine on structure, structural relaxation, and absorption edge in silica glass

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Acceptor diffusion and segregation in $({Al}_{x} {Ga}_{1−x})_{0.5} {In}_{0.5} P$ heterostructures

P. N. Grillot; S. A. Stockman; J. W. Huang; H. Bracht; Y. L. Chang

J. Appl. Phys. 91, 4891–4899 (2002) https://doi.org/10.1063/1.1461060

Abstract

View articletitled, Acceptor diffusion and segregation in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.5</mtext></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> heterostructures

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Rapid thermal annealing of ${GaN}_{x} {As}_{1−x}$ grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

W. K. Loke; S. F. Yoon; S. Z. Wang; T. K. Ng; W. J. Fan

J. Appl. Phys. 91, 4900–4903 (2002) https://doi.org/10.1063/1.1454193

Abstract

View articletitled, Rapid thermal annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaN</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">As</mi><mrow><mtext>1−x</mtext></mrow></msub></math> grown by radio-frequency plasma assisted molecular beam epitaxy and its effect on photoluminescence

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Photoreflectance study in the $E_{}$ and $E_{} {+Δ}_{}$ transition regions of GaP

Takehito Mishima; Masa-aki Miura; Shunji Ozaki; Sadao Adachi

J. Appl. Phys. 91, 4904–4909 (2002) https://doi.org/10.1063/1.1461067

Abstract

View articletitled, Photoreflectance study in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn></mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn></mn></mrow></msub><msub xmlns=""><mi>+Δ</mi><mrow><mn></mn></mrow></msub></math> transition regions of GaP

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Optical parameters of a magnetized space-charge neutral group IV semiconductor

Giriraj Sharma; S. Ghosh

J. Appl. Phys. 91, 4910–4916 (2002) https://doi.org/10.1063/1.1456245

Abstract

View articletitled, Optical parameters of a magnetized space-charge neutral group IV semiconductor

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Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN

W. H. Sun; S. J. Chua; L. S. Wang; X. H. Zhang

J. Appl. Phys. 91, 4917–4921 (2002) https://doi.org/10.1063/1.1455682

Abstract

View articletitled, Outgoing multiphonon resonant Raman scattering and luminescence in Be- and C-implanted GaN

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Electronic linear energy transfer dependent molecular structural growth in polyethylene terephthalate

A. Biswas; S. Lotha; R. Gupta; D. K. Avasthi; S. N. Paul

J. Appl. Phys. 91, 4922–4927 (2002) https://doi.org/10.1063/1.1462424

Abstract

View articletitled, Electronic linear energy transfer dependent molecular structural growth in polyethylene terephthalate

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GaCl molecular dynamics on a GaAs surface during GaAs epitaxial growth

Masafumi Ohashi; Masashi Ozeki

J. Appl. Phys. 91, 4928–4931 (2002) https://doi.org/10.1063/1.1461900

Abstract

View articletitled, GaCl molecular dynamics on a GaAs surface during GaAs epitaxial growth

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Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux

K. Matsuda; Y. Takano; K. Kuwabara; H. Tatsuoka; H. Kuwabara; Y. Suzuki; Y. Fukuda; S. Hashimoto; Y. Yan; S. J. Pennycook

J. Appl. Phys. 91, 4932–4935 (2002) https://doi.org/10.1063/1.1461063

Abstract

View articletitled, Formation of MnSb during the growth of MnSi layers in the presence of an Sb flux

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Zero-dimensional excitons in CdTe/ZnTe nanostructures

L. Marsal; L. Besombes; F. Tinjod; K. Kheng; A. Wasiela; B. Gilles; J.-L. Rouvière; H. Mariette

J. Appl. Phys. 91, 4936–4943 (2002) https://doi.org/10.1063/1.1436560

Abstract

View articletitled, Zero-dimensional excitons in CdTe/ZnTe nanostructures

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Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering

Debajyoti Das; K. H. Chen; S. Chattopadhyay; L. C. Chen

J. Appl. Phys. 91, 4944–4955 (2002) https://doi.org/10.1063/1.1459610

Abstract

View articletitled, Spectroscopic studies of nitrogenated amorphous carbon films prepared by ion beam sputtering

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Glass transition, crystallization kinetics and pressure effect on crystallization of ZrNbCuNiBe bulk metallic glass

P. F. Xing; Y. X. Zhuang; W. H. Wang; L. Gerward; J. Z. Jiang

J. Appl. Phys. 91, 4956–4960 (2002) https://doi.org/10.1063/1.1461892

Abstract

View articletitled, Glass transition, crystallization kinetics and pressure effect on crystallization of ZrNbCuNiBe bulk metallic glass

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Kinetics of the late stage of first-order phase transitions under laser irradiation

A. G. Ambrok; E. V. Kalashnikov; S. A. Kukushkin

J. Appl. Phys. 91, 4961–4965 (2002) https://doi.org/10.1063/1.1445491

Abstract

View articletitled, Kinetics of the late stage of first-order phase transitions under laser irradiation

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Porous silicon multilayer structures: A photonic band gap analysis

J. E. Lugo; H. A. Lopez; S. Chan; P. M. Fauchet

J. Appl. Phys. 91, 4966–4972 (2002) https://doi.org/10.1063/1.1461898

Abstract

View articletitled, Porous silicon multilayer structures: A photonic band gap analysis

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Substrate-induced mechanical and dielectric properties of a ferroelectric thin film

L. Lahoche; V. Lorman; S. B. Rochal; J. M. Roelandt

J. Appl. Phys. 91, 4973–4982 (2002) https://doi.org/10.1063/1.1464207

Abstract

View articletitled, Substrate-induced mechanical and dielectric properties of a ferroelectric thin film

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Structural properties of undoped and doped cubic GaN grown on SiC(001)

E. Martinez-Guerrero; E. Bellet-Amalric; L. Martinet; G. Feuillet; B. Daudin; H. Mariette; P. Holliger; C. Dubois; C. Bru-Chevallier; P. Aboughe Nze; T. Chassagne; G. Ferro; Y. Monteil

J. Appl. Phys. 91, 4983–4987 (2002) https://doi.org/10.1063/1.1456243

Abstract

View articletitled, Structural properties of undoped and doped cubic GaN grown on SiC(001)

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Native defects and self-diffusion in GaSb

M. Hakala; M. J. Puska; R. M. Nieminen

J. Appl. Phys. 91, 4988–4994 (2002) https://doi.org/10.1063/1.1462844

Abstract

View articletitled, Native defects and self-diffusion in GaSb

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Anomalous detonation velocities following type II deflagration-to-detonation transitions in pentaerythritol tetranitrate

M. J. Gifford; K. Tsembelis; J. E. Field

J. Appl. Phys. 91, 4995–5001 (2002) https://doi.org/10.1063/1.1462415

Abstract

View articletitled, Anomalous detonation velocities following type II deflagration-to-detonation transitions in pentaerythritol tetranitrate

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Photothermal probing of inhomogeneously modulated transparent thin films

O. B. Wright; R. Li Voti; O. Matsuda; M. C. Larciprete; C. Sibilia; M. Bertolotti

J. Appl. Phys. 91, 5002–5009 (2002) https://doi.org/10.1063/1.1462414

Abstract

View articletitled, Photothermal probing of inhomogeneously modulated transparent thin films

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Elastic moduli of polycrystalline ${LaAl}_{x} {Ni}_{5−x}$

M. Bereznitsky; A. Ode; J. E. Hightower; O. Yeheskel; I. Jacob; R. G. Leisure

J. Appl. Phys. 91, 5010–5015 (2002) https://doi.org/10.1063/1.1461893

Abstract

View articletitled, Elastic moduli of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAl</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>5−x</mtext></mrow></msub></math>

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Thermally stimulated photoluminescence in poly(2,5-dioctoxy p-phenylene vinylene)

A. Kadashchuk; Yu. Skryshevski; Yu. Piryatinski; A. Vakhnin; E. V. Emelianova; V. I. Arkhipov; H. Bässler; J. Shinar

J. Appl. Phys. 91, 5016–5023 (2002) https://doi.org/10.1063/1.1464235

Abstract

View articletitled, Thermally stimulated photoluminescence in poly(2,5-dioctoxy p-phenylene vinylene)

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Low energy electron diffraction of the system In-[perylene-3,4,9, 10-tetracarboxylic dianhydride] on ${MoS}_{2}$

Yasushi Azuma; Kazuaki Iwasawa; Tsutomu Kurihara; Koji K. Okudaira; Yoshiya Harada; Nobuo Ueno

J. Appl. Phys. 91, 5024–5028 (2002) https://doi.org/10.1063/1.1457543

Abstract

View articletitled, Low energy electron diffraction of the system In-[perylene-3,4,9, 10-tetracarboxylic dianhydride] on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MoS</mi><mrow><mn>2</mn></mrow></msub></math>

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Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

N. Rochat; A. Chabli; F. Bertin; M. Olivier; C. Vergnaud; P. Mur

J. Appl. Phys. 91, 5029–5034 (2002) https://doi.org/10.1063/1.1464231

Abstract

View articletitled, Attenuated total reflection spectroscopy for infrared analysis of thin layers on a semiconductor substrate

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Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers

Shigeo Ibuka; Michio Tajima

J. Appl. Phys. 91, 5035–5040 (2002) https://doi.org/10.1063/1.1462848

Abstract

View articletitled, Temporal decay measurement of condensate luminescence and its application to characterization of silicon-on-insulator wafers

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Enhanced efficiency of ${PbWO}_{4} : Mo,Nb$ scintillator

M. Nikl; P. Bohacek; E. Mihokova; N. Solovieva; A. Vedda; M. Martini; G. P. Pazzi; P. Fabeni; M. Kobayashi; M. Ishii

J. Appl. Phys. 91, 5041–5044 (2002) https://doi.org/10.1063/1.1462420

Abstract

View articletitled, Enhanced efficiency of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbWO</mi><mrow><mn>4</mn></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">Mo,Nb</mi></math> scintillator

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Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

A. M. Ardila; O. Martínez; M. Avella; J. Jiménez; B. Gérard; J. Napierala; E. Gil-Lafon

J. Appl. Phys. 91, 5045–5050 (2002) https://doi.org/10.1063/1.1462849

Abstract

View articletitled, Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

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Negative thermal expansion behavior in single crystal and ceramic of ${Nb}_{2} O_{5}$ -based compositions

H. Choosuwan; R. Guo; A. S. Bhalla; U. Balachandran

J. Appl. Phys. 91, 5051–5054 (2002) https://doi.org/10.1063/1.1464232

Abstract

View articletitled, Negative thermal expansion behavior in single crystal and ceramic of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>5</mn></mrow></msub></math>-based compositions

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Effects of high potential barrier on InAs quantum dots and wetting layer

Jin Soo Kim; Phil Won Yu; Jae-Young Leem; Minhyon Jeon; Sam Kyu Noh; Joo In Lee; Gu Hyun Kim; Se-Kyung Kang; Jong Su Kim; Song Gang Kim

J. Appl. Phys. 91, 5055–5059 (2002) https://doi.org/10.1063/1.1464230

Abstract

View articletitled, Effects of high potential barrier on InAs quantum dots and wetting layer

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Time-resolved luminescence and photoconductivity of polycrystalline ZnO films

S. A. Studenikin; Michael Cocivera

J. Appl. Phys. 91, 5060–5065 (2002) https://doi.org/10.1063/1.1461890

Abstract

View articletitled, Time-resolved luminescence and photoconductivity of polycrystalline ZnO films

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Recombination dynamics for photogenerated carriers in germanium-doped ZnSe epilayers grown by molecular beam epitaxy

S. Z. Wang; S. F. Yoon

J. Appl. Phys. 91, 5066–5071 (2002) https://doi.org/10.1063/1.1461899

Abstract

View articletitled, Recombination dynamics for photogenerated carriers in germanium-doped ZnSe epilayers grown by molecular beam epitaxy

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

A. Maaßdorf; S. Gramlich; E. Richter; F. Brunner; M. Weyers; G. Tränkle; J. W. Tomm; Y. I. Mazur; D. Nickel; V. Malyarchuk; T. Günther; Ch. Lienau; A. Bärwolff; T. Elsaesser

J. Appl. Phys. 91, 5072–5078 (2002) https://doi.org/10.1063/1.1456244

Abstract

View articletitled, Minority-carrier kinetics in heavily doped GaAs:C studied by transient photoluminescence

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Thermal conduction in doped single-crystal silicon films

M. Asheghi; K. Kurabayashi; R. Kasnavi; K. E. Goodson

J. Appl. Phys. 91, 5079–5088 (2002) https://doi.org/10.1063/1.1458057

Abstract

View articletitled, Thermal conduction in doped single-crystal silicon films

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Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells

T. W. Kim; D. U. Lee; D. C. Choo; M. Jung; K. H. Yoo; G. Comanescu; B. D. McCombe

J. Appl. Phys. 91, 5089–5092 (2002) https://doi.org/10.1063/1.1454198

Abstract

View articletitled, Electronic property variations due to an embedded potential barrier layer in modulation-doped step quantum wells

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Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline $Cu (In, Ga) {Se}_{2}$ thin films

Th. Meyer; F. Engelhardt; J. Parisi; U. Rau

J. Appl. Phys. 91, 5093–5099 (2002) https://doi.org/10.1063/1.1459597

Abstract

View articletitled, Spectral dependence and Hall effect of persistent photoconductivity in polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">In</mi><mi xmlns="">,</mi><mi mathvariant="normal" xmlns="">Ga</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mn>2</mn></mrow></msub></math> thin films

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Modelling of magnetotransport of hot electrons in a spin-valve transistor

Jisang Hong

J. Appl. Phys. 91, 5100–5104 (2002) https://doi.org/10.1063/1.1461061

Abstract

View articletitled, Modelling of magnetotransport of hot electrons in a spin-valve transistor

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Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III–V semiconductor Γ quantum wells

C. W. Cheah; L. S. Tan; G. Karunasiri

J. Appl. Phys. 91, 5105–5115 (2002) https://doi.org/10.1063/1.1448890

Abstract

View articletitled, Application of analytical k.p model with envelope function approximation to intersubband transitions in n-type III–V semiconductor Γ quantum wells

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Direct and trap-assisted elastic tunneling through ultrathin gate oxides

F. Jiménez-Molinos; F. Gámiz; A. Palma; P. Cartujo; J. A. López-Villanueva

J. Appl. Phys. 91, 5116–5124 (2002) https://doi.org/10.1063/1.1461062

Abstract

View articletitled, Direct and trap-assisted elastic tunneling through ultrathin gate oxides

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Particle size and magnetic field dependent resistivity and thermoelectric power of ${La}_{0.5} {Pb}_{0.5} {MnO}_{3}$ above and below metal–insulator transition

Aritra Banerjee; Sudipta Pal; S. Bhattacharya; B. K. Chaudhuri; H. D. Yang

J. Appl. Phys. 91, 5125–5134 (2002) https://doi.org/10.1063/1.1459618

Abstract

View articletitled, Particle size and magnetic field dependent resistivity and thermoelectric power of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Pb</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> above and below metal–insulator transition

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Electronic structure of ytterbium-doped strontium fluoroapatite: Photoemission and photoabsorption investigation

A. J. Nelson; T. van Buuren; C. Bostedt; K. I. Schaffers; L. J. Terminello; Mark Engelhard; Don Baer

J. Appl. Phys. 91, 5135–5140 (2002) https://doi.org/10.1063/1.1459601

Abstract

View articletitled, Electronic structure of ytterbium-doped strontium fluoroapatite: Photoemission and photoabsorption investigation

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Mechanically reversible conductor–insulator transition in ${Mg}_{2} {NiH}_{4}$

Helen Blomqvist; Dag Noréus

J. Appl. Phys. 91, 5141–5148 (2002) https://doi.org/10.1063/1.1461069

Abstract

View articletitled, Mechanically reversible conductor–insulator transition in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">NiH</mi><mrow><mn>4</mn></mrow></msub></math>

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Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films

R. Kröger; M. Eizenberg; C. Marcadal; L. Chen

J. Appl. Phys. 91, 5149–5154 (2002) https://doi.org/10.1063/1.1459750

Abstract

View articletitled, Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films

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Effects of the number of periods on strain in superlattices

K. Nishida; S. Hagiwara; M. Teranishi; O. Sirakawa; A. Hirakai; T. Katoda

J. Appl. Phys. 91, 5155–5157 (2002) https://doi.org/10.1063/1.1462419

Abstract

View articletitled, Effects of the number of periods on strain in superlattices

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Deep levels in strongly Si-compensated GaAs and AlGaAs

Tadashige Sato; Toshio Ishiwatari

J. Appl. Phys. 91, 5158–5162 (2002) https://doi.org/10.1063/1.1462847

Abstract

View articletitled, Deep levels in strongly Si-compensated GaAs and AlGaAs

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Charge polarization effects and hole spectra characteristics in ${Al}_{x} {Ga}_{1−x} N/GaN$ superlattices

Fatna Assaoui; Pedro Pereyra

J. Appl. Phys. 91, 5163–5169 (2002) https://doi.org/10.1063/1.1464234

Abstract

View articletitled, Charge polarization effects and hole spectra characteristics in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N/GaN</mi></math> superlattices

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Transient response of a bilayer organic light emitting diode: Building-up of external and recombination currents

L. Hassine; H. Bouchriha; J. Roussel; J.-L. Fave

J. Appl. Phys. 91, 5170–5175 (2002) https://doi.org/10.1063/1.1464212

Abstract

View articletitled, Transient response of a bilayer organic light emitting diode: Building-up of external and recombination currents

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Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells

Milan S. Minsky; Satoshi Watanabe; Norihide Yamada

J. Appl. Phys. 91, 5176–5181 (2002) https://doi.org/10.1063/1.1459106

Abstract

View articletitled, Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells

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Effects of space charge at the conjugated polymer/electrode interface

C. A. Mills; D. M. Taylor; A. Riul, Jr.; A. P. Lee

J. Appl. Phys. 91, 5182–5189 (2002) https://doi.org/10.1063/1.1454188

Abstract

View articletitled, Effects of space charge at the conjugated polymer/electrode interface

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Band gaps and lattice parameters of 0.9 μm thick ${In}_{x} {Ga}_{1−x} N$ films for $0⩽x⩽0.140$

J. D. Beach; Hamda Al-Thani; S. McCray; R. T. Collins; J. A. Turner

J. Appl. Phys. 91, 5190–5194 (2002) https://doi.org/10.1063/1.1462851

Abstract

View articletitled, Band gaps and lattice parameters of 0.9 μm thick <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> films for <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">0⩽x⩽0.140</mtext></math>

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Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped ${Al}_{x} {Ga}_{1−x} As/GaAs$ heterostructures

H. S. Lee; J. Y. Lee; T. W. Kim; D. U. Lee; D. C. Choo; M. Jung; M. D. Kim

J. Appl. Phys. 91, 5195–5199 (2002) https://doi.org/10.1063/1.1459752

Abstract

View articletitled, Microstructural and optical properties of InAs/GaAs quantum dots embedded in modulation-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> heterostructures

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Avalanche breakdown voltage of ${In}_{0.53} {Ga}_{0.47} As$

J. S. Ng; J. P. R. David; G. J. Rees; J. Allam

J. Appl. Phys. 91, 5200–5202 (2002) https://doi.org/10.1063/1.1462845

Abstract

View articletitled, Avalanche breakdown voltage of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.47</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math>

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Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. Kim; B. Luo; R. Mehandru; F. Ren; K. P. Lee; S. J. Pearton; A. V. Osinsky; P. E. Norris

J. Appl. Phys. 91, 5203–5207 (2002) https://doi.org/10.1063/1.1465119

Abstract

View articletitled, Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing

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Terahertz complex mobility of hot electrons in 3C– and 6H–SiC at high temperature

E. F. Bezerra; E. W. S. Caetano; V. N. Freire; V. Lemos; J. A. P. da Costa; E. F. da Silva, Jr.

J. Appl. Phys. 91, 5208–5212 (2002) https://doi.org/10.1063/1.1464213

Abstract

View articletitled, Terahertz complex mobility of hot electrons in 3C– and 6H–SiC at high temperature

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Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

Kensaku Kawamura; Toshirou Kidera; Anri Nakajima; Shin Yokoyama

J. Appl. Phys. 91, 5213–5220 (2002) https://doi.org/10.1063/1.1464650

Abstract

View articletitled, Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

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Current and voltage noise in ${WO}_{3}$ nanoparticle films

A. Hoel; L. K. J. Vandamme; L. B. Kish; E. Olsson

J. Appl. Phys. 91, 5221–5226 (2002) https://doi.org/10.1063/1.1423398

Abstract

View articletitled, Current and voltage noise in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mn>3</mn></mrow></msub></math> nanoparticle films

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Effects of transition metal substitution on the glass-formation ability and magnetic properties of ${Fe}_{62} {Co}_{9.5} {Nd}_{3} {Dy}_{0.5} B_{25}$ glassy alloy

Yi Long; Wei Zhang; Xinmin Wang; Akihisa Inoue

J. Appl. Phys. 91, 5227–5229 (2002) https://doi.org/10.1063/1.1457538

Abstract

View articletitled, Effects of transition metal substitution on the glass-formation ability and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>62</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>9.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Dy</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>25</mn></mrow></msub></math> glassy alloy

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Dielectric behavior of ${Co}_{2} Z$ hexagonal ferrites with multiple modifications

Hongguo Zhang; Longtu Li; Yongli Wang; Ji Zhou; Zhenxing Yue; Zhilun Gui

J. Appl. Phys. 91, 5230–5233 (2002) https://doi.org/10.1063/1.1459742

Abstract

View articletitled, Dielectric behavior of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">Z</mi></math> hexagonal ferrites with multiple modifications

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Effect of Ti seed layer on the magnetization reversal process of Co/NiFe/Al-oxide/NiFe junction films

Andrew C. C. Yu; Amanda K. Petford-Long; Kevin O’Grady; Terunobu Miyazaki

J. Appl. Phys. 91, 5234–5239 (2002) https://doi.org/10.1063/1.1459598

Abstract

View articletitled, Effect of Ti seed layer on the magnetization reversal process of Co/NiFe/Al-oxide/NiFe junction films

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Magnetocaloric effect in bulk amorphous ${Pd}_{40} {Ni}_{22.5} {Fe}_{17.5} P_{20}$ alloy

T. D. Shen; R. B. Schwarz; J. Y. Coulter; J. D. Thompson

J. Appl. Phys. 91, 5240–5245 (2002) https://doi.org/10.1063/1.1456957

Abstract

View articletitled, Magnetocaloric effect in bulk amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pd</mi><mrow><mn>40</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>22.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>17.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">P</mi><mrow><mn>20</mn></mrow></msub></math> alloy

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Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

Naoki Nishimura; Tadahiko Hirai; Akio Koganei; Takashi Ikeda; Kazuhisa Okano; Yoshinobu Sekiguchi; Yoshiyuki Osada

J. Appl. Phys. 91, 5246–5249 (2002) https://doi.org/10.1063/1.1459605

Abstract

View articletitled, Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

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Antiferro- to ferromagnetic transition and large magnetoresistance in ${YMn}_{6} {Sn}_{6−x} {Ti}_{x}$ $(x=0–1.0)$ compounds

Shao-ying Zhang; Peng Zhao; Run-wei Li; Hong-wei Zhang; Bao-gen Shen

J. Appl. Phys. 91, 5250–5253 (2002) https://doi.org/10.1063/1.1461886

Abstract

View articletitled, Antiferro- to ferromagnetic transition and large magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YMn</mi><mrow><mn>6</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mtext>6−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mi>x</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=0–1.0)</mtext></math> compounds

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Transverse demagnetizing factors of long rectangular bars: I. Analytical expressions for extreme values of susceptibility

D.-X. Chen; C. Prados; E. Pardo; A. Sanchez; A. Hernando

J. Appl. Phys. 91, 5254–5259 (2002) https://doi.org/10.1063/1.1459745

Abstract

View articletitled, Transverse demagnetizing factors of long rectangular bars: I. Analytical expressions for extreme values of susceptibility

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Transverse demagnetizing factors of long rectangular bars. II. Numerical calculations for arbitrary susceptibility

Enric Pardo; Alvaro Sanchez; Du-Xing Chen

J. Appl. Phys. 91, 5260–5267 (2002) https://doi.org/10.1063/1.1459746

Abstract

View articletitled, Transverse demagnetizing factors of long rectangular bars. II. Numerical calculations for arbitrary susceptibility

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Effect of the buffer anisotropy on the rigidity of artificial antiferromagnetic hard magnetic layers in spin valve structures

S. Colis; A. Dinia

J. Appl. Phys. 91, 5268–5271 (2002) https://doi.org/10.1063/1.1462841

Abstract

View articletitled, Effect of the buffer anisotropy on the rigidity of artificial antiferromagnetic hard magnetic layers in spin valve structures

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Thermal stability of exchange bias in FeMn based bilayers

Minghu Pan; Biao You; Yanling Zhao; Mu Lu; An Hu; Hongru Zhai; Shiming Zhou

J. Appl. Phys. 91, 5272–5274 (2002) https://doi.org/10.1063/1.1446661

Abstract

View articletitled, Thermal stability of exchange bias in FeMn based bilayers

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

A method to characterize the dielectric and interfacial properties of metal–insulator-semiconductor structures by microwave measurement

Hang-Ting Lue; Tseung-Yuen Tseng; Guo-Wei Huang

J. Appl. Phys. 91, 5275–5282 (2002) https://doi.org/10.1063/1.1459603

Abstract

View articletitled, A method to characterize the dielectric and interfacial properties of metal–insulator-semiconductor structures by microwave measurement

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Dielectric barrier microdischarges: Mechanism for the charging of cellular piezoelectric polymers

Michael Lindner; Simona Bauer-Gogonea; Siegfried Bauer; Mika Paajanen; Jaakko Raukola

J. Appl. Phys. 91, 5283–5287 (2002) https://doi.org/10.1063/1.1459751

Abstract

View articletitled, Dielectric barrier microdischarges: Mechanism for the charging of cellular piezoelectric polymers

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Dielectric tunability of coherently strained ${LaAlO}_{3} / {SrTiO}_{3}$ superlattices

D. Fuchs; M. Adam; P. Schweiss; R. Schneider

J. Appl. Phys. 91, 5288–5295 (2002) https://doi.org/10.1063/1.1461897

Abstract

View articletitled, Dielectric tunability of coherently strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> superlattices

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Injection and accumulation of electric charge in MgO single crystals

N. Farhat; T. Ditchi; S. Holé; J. Lewiner

J. Appl. Phys. 91, 5296–5301 (2002) https://doi.org/10.1063/1.1459615

Abstract

View articletitled, Injection and accumulation of electric charge in MgO single crystals

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Evolution of quasi-breakdown in thin gate oxides

Wei Yip Loh; Byung Jin Cho; Ming Fu Li

J. Appl. Phys. 91, 5302–5306 (2002) https://doi.org/10.1063/1.1464648

Abstract

View articletitled, Evolution of quasi-breakdown in thin gate oxides

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Vacancy-type defects in ${BaTiO}_{3} / {SrTiO}_{3}$ structures probed by monoenergetic positron beams

Akira Uedono; Kazuo Shimoyama; Masahiro Kiyohara; Zhi Quan Chen; Kikuo Yamabe; Toshiyuki Ohdaira; Ryoichi Suzuki; Tomohisa Mikado

J. Appl. Phys. 91, 5307–5312 (2002) https://doi.org/10.1063/1.1462852

Abstract

View articletitled, Vacancy-type defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> structures probed by monoenergetic positron beams

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NANOSCALE SCIENCE AND DESIGN

Properties of InP self-assembled quantum dots embedded in ${In}_{0.49} ({Al}_{x} {Ga}_{1−x})_{0.51} P$ for visible light emitting laser applications grown by metalorganic chemical vapor deposition

J. H. Ryou; R. D. Dupuis; G. Walter; N. Holonyak, Jr.; D. T. Mathes; R. Hull; C. V. Reddy; V. Narayanamurti

J. Appl. Phys. 91, 5313–5320 (2002) https://doi.org/10.1063/1.1454205

Abstract

View articletitled, Properties of InP self-assembled quantum dots embedded in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.49</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.51</mtext></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math> for visible light emitting laser applications grown by metalorganic chemical vapor deposition

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Comparative study of magnetoresistance and magnetization in nano-oxide specular and nonspecular MnIr/CoFe/Cu/CoFe spin valves from 10 to 300 K

J. B. Sousa; J. O. Ventura; M. A. Salgueiro da Silva; P. P. Freitas; A. Veloso

J. Appl. Phys. 91, 5321–5324 (2002) https://doi.org/10.1063/1.1459617

Abstract

View articletitled, Comparative study of magnetoresistance and magnetization in nano-oxide specular and nonspecular MnIr/CoFe/Cu/CoFe spin valves from 10 to 300 K

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Adjustable boron carbonitride nanotubes

C. Y. Zhi; J. D. Guo; X. D. Bai; E. G. Wang

J. Appl. Phys. 91, 5325–5333 (2002) https://doi.org/10.1063/1.1459596

Abstract

View articletitled, Adjustable boron carbonitride nanotubes

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Influence of light intensity on the photoluminescence of silicon nanostructures

D. Amans; O. Guillois; G. Ledoux; D. Porterat; C. Reynaud

J. Appl. Phys. 91, 5334–5340 (2002) https://doi.org/10.1063/1.1461064

Abstract

View articletitled, Influence of light intensity on the photoluminescence of silicon nanostructures

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Domain walls in ferromagnetic nanoconstriction

Y. Labaye; L. Berger; J. M. D. Coey

J. Appl. Phys. 91, 5341–5346 (2002) https://doi.org/10.1063/1.1461065

Abstract

View articletitled, Domain walls in ferromagnetic nanoconstriction

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Nanoindentation hardness and adhesion investigations of vapor deposited nanostructured diamond films

Shane A. Catledge; James Borham; Yogesh K. Vohra; William R. Lacefield; Jack E. Lemons

J. Appl. Phys. 91, 5347–5352 (2002) https://doi.org/10.1063/1.1464233

Abstract

View articletitled, Nanoindentation hardness and adhesion investigations of vapor deposited nanostructured diamond films

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Nanostructured icosahedral phase formation in ${Al}_{70} {Cu}_{20} {Fe}_{10}$ by mechanical alloying: Comprehensive study

P. Barua; B. S. Murty; B. K. Mathur; V. Srinivas

J. Appl. Phys. 91, 5353–5359 (2002) https://doi.org/10.1063/1.1464206

Abstract

View articletitled, Nanostructured icosahedral phase formation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>70</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>20</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>10</mn></mrow></msub></math> by mechanical alloying: Comprehensive study

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DEVICE PHYSICS (PACS 85)

Origin of transconductance oscillations in silicon-on-insulator metal–oxide–semiconductor field-effect transistors with an ultrathin 6-nm-thick active Si layer

H. Ueno; M. Tanaka; K. Morikawa; T. Takahashi; M. Miura-Mattausch; Y. Omura

J. Appl. Phys. 91, 5360–5364 (2002) https://doi.org/10.1063/1.1459606

Abstract

View articletitled, Origin of transconductance oscillations in silicon-on-insulator metal–oxide–semiconductor field-effect transistors with an ultrathin 6-nm-thick active Si layer

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Magnetic force microscopy study of perpendicular media: Signal-to-noise determination and transition noise analysis

Erik B. Svedberg; Sakhrat Khizroev; Dmitri Litvinov

J. Appl. Phys. 91, 5365–5370 (2002) https://doi.org/10.1063/1.1459602

Abstract

View articletitled, Magnetic force microscopy study of perpendicular media: Signal-to-noise determination and transition noise analysis

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Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes

H. Kim; J. S. Horwitz; W. H. Kim; Z. H. Kafafi; D. B. Chrisey

J. Appl. Phys. 91, 5371–5376 (2002) https://doi.org/10.1063/1.1461068

Abstract

View articletitled, Highly oriented indium tin oxide films for high efficiency organic light-emitting diodes

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Microwave response of a high electron mobility transistor in the presence of a Dyakonov–Shur instability

Frank J. Crowne

J. Appl. Phys. 91, 5377–5383 (2002) https://doi.org/10.1063/1.1448891

Abstract

View articletitled, Microwave response of a high electron mobility transistor in the presence of a Dyakonov–Shur instability

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Characterization of ferromagnetic perovskites for magnetically tunable microwave superconducting resonators

J. Wosik; L.-M. Xie; M. Strikovski; P. Przyslupski; M. Kamel; V. V. Srinivasu; S. A. Long

J. Appl. Phys. 91, 5384–5390 (2002) https://doi.org/10.1063/1.1459600

Abstract

View articletitled, Characterization of ferromagnetic perovskites for magnetically tunable microwave superconducting resonators

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TaC as a diffusion barrier between Si and Cu

Tomi Laurila; Kejun Zeng; Jorma K. Kivilahti; Jyrki Molarius; Iikka Suni

J. Appl. Phys. 91, 5391–5399 (2002) https://doi.org/10.1063/1.1464652

Abstract

View articletitled, TaC as a diffusion barrier between Si and Cu

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Numerical study of a GaAs-based heterojunction bipolar transistor with stepwise alloy-graded base

Konstantinos Konistis; Qing Hu

J. Appl. Phys. 91, 5400–5410 (2002) https://doi.org/10.1063/1.1462846

Abstract

View articletitled, Numerical study of a GaAs-based heterojunction bipolar transistor with stepwise alloy-graded base

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Ultraviolet light assisted oxygenation process for submicron ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin film devices

F. Herbstritt; T. Kemen; A. Marx; R. Gross

J. Appl. Phys. 91, 5411–5418 (2002) https://doi.org/10.1063/1.1459599

Abstract

View articletitled, Ultraviolet light assisted oxygenation process for submicron <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> thin film devices

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Propagation and post-acceleration of a pseudospark-sourced electron beam

H. Yin; A. W. Cross; A. D. R. Phelps; D. Zhu; W. He; K. Ronald

J. Appl. Phys. 91, 5419–5422 (2002) https://doi.org/10.1063/1.1459757

Abstract

View articletitled, Propagation and post-acceleration of a pseudospark-sourced electron beam

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Enhanced thermally induced stress effect on an ultrathin gate oxide

Jiann-Liang Su; Chao-Chi Hong; Jenn-Gwo Hwu

J. Appl. Phys. 91, 5423–5428 (2002) https://doi.org/10.1063/1.1452763

Abstract

View articletitled, Enhanced thermally induced stress effect on an ultrathin gate oxide

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Observation of the growth mode of TiN during magnetron sputtering using synchrotron radiation

J. Bøttiger; J. Chevallier; J. H. Petersen; N. Schell; W. Matz; A. Mücklich

J. Appl. Phys. 91, 5429–5433 (2002) https://doi.org/10.1063/1.1459749

Abstract

View articletitled, Observation of the growth mode of TiN during magnetron sputtering using synchrotron radiation

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Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing

Jun Xu; Xiaohui Huang; Wei Li; Kunji Chen; Jianbin Xu

J. Appl. Phys. 91, 5434–5437 (2002) https://doi.org/10.1063/1.1464211

Abstract

View articletitled, Stable field emission with low threshold field from amorphous carbon films due to layer-by-layer hydrogen plasma annealing

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Fokker–Planck approach to impact ionization distributions in space and time

Biju Jacob; P. N. Robson; J. P. R. David; G. J. Rees

J. Appl. Phys. 91, 5438–5441 (2002) https://doi.org/10.1063/1.1458054

Abstract

View articletitled, Fokker–Planck approach to impact ionization distributions in space and time

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Role of hydrogen in controlling the growth of $μc- Si:H$ films from argon diluted ${SiH}_{4}$ plasma

Madhusudan Jana; Debajyoti Das; A. K. Barua

J. Appl. Phys. 91, 5442–5448 (2002) https://doi.org/10.1063/1.1454201

Abstract

View articletitled, Role of hydrogen in controlling the growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">μc-</mi><mi mathvariant="normal" xmlns="">Si:H</mi></math> films from argon diluted <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiH</mi><mrow><mn>4</mn></mrow></msub></math> plasma

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Correlation between magnetic properties of layered ferromagnetic/dielectric material and tunable microwave device applications

Erwan Salahun; Patrick Quéffélec; Gérard Tanné; Anne-Lise Adenot; Olivier Acher

J. Appl. Phys. 91, 5449–5455 (2002) https://doi.org/10.1063/1.1461066

Abstract

View articletitled, Correlation between magnetic properties of layered ferromagnetic/dielectric material and tunable microwave device applications

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Molecular engineering versus energy level alignment: Interface formation between oligothiophene derivatives and a metal substrate studied with photoemission spectroscopy

A. J. Mäkinen; I. G. Hill; M. Kinoshita; T. Noda; Y. Shirota; Z. H. Kafafi

J. Appl. Phys. 91, 5456–5461 (2002) https://doi.org/10.1063/1.1464209

Abstract

View articletitled, Molecular engineering versus energy level alignment: Interface formation between oligothiophene derivatives and a metal substrate studied with photoemission spectroscopy

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Laser ablation of thin films with very high induced stresses

H. Dömer; O. Bostanjoglo

J. Appl. Phys. 91, 5462–5467 (2002) https://doi.org/10.1063/1.1462850

Abstract

View articletitled, Laser ablation of thin films with very high induced stresses

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Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

V. Aubry-Fortuna; O. Chaix-Pluchery; F. Fortuna; C. Hernandez; Y. Campidelli; D. Bensahel

J. Appl. Phys. 91, 5468–5473 (2002) https://doi.org/10.1063/1.1462855

Abstract

View articletitled, Structural properties and stability of Zr and Ti germanosilicides formed by rapid thermal annealing

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Three-dimensional position detection of optically trapped dielectric particles

Alexander Rohrbach; Ernst H. K. Stelzer

J. Appl. Phys. 91, 5474–5488 (2002) https://doi.org/10.1063/1.1459748

Abstract

View articletitled, Three-dimensional position detection of optically trapped dielectric particles

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COMMUNICATIONS

Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples

G. Cassabois; C. Kammerer; R. Sopracase; C. Voisin; C. Delalande; Ph. Roussignol; J. M. Gérard

J. Appl. Phys. 91, 5489–5491 (2002) https://doi.org/10.1063/1.1459622

Abstract

View articletitled, Disorder-induced photoluminescence up-conversion in InAs/GaAs quantum-dot samples

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Emission from ${BaTiO}_{3} : \Pr^{3+}$ controlled by ionic radius of added trivalent ion

Shinji Okamoto; Hajime Yamamoto

J. Appl. Phys. 91, 5492–5494 (2002) https://doi.org/10.1063/1.1458050

Abstract

View articletitled, Emission from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi><msup xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mtext>3+</mtext></mrow></msup></math> controlled by ionic radius of added trivalent ion

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Near-field spectroscopy of porous silicon microcavity samples

F. Fuso; M. Labardi; F. Sbrana; L. Pardi; M. Allegrini; Z. Gaburro; L. Pavesi

J. Appl. Phys. 91, 5495–5497 (2002) https://doi.org/10.1063/1.1459747

Abstract

View articletitled, Near-field spectroscopy of porous silicon microcavity samples

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Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

C. Adelmann; J. Brault; J.-L. Rouvière; H. Mariette; Guido Mula; B. Daudin

J. Appl. Phys. 91, 5498–5500 (2002) https://doi.org/10.1063/1.1458049

Abstract

View articletitled, Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN

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Laser shock forming on coated metal sheets characterized by ultrahigh-strain-rate plastic deformation

Ming Zhou; Yongkang Zhang; Lan Cai

J. Appl. Phys. 91, 5501–5503 (2002) https://doi.org/10.1063/1.1459624

Abstract

View articletitled, Laser shock forming on coated metal sheets characterized by ultrahigh-strain-rate plastic deformation

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Effect of foil target thickness on fast proton generation driven by ultrashort-pulse laser

J. Badziak; E. Woryna; P. Parys; J. Wołowski; K. Yu. Platonov; A. B. Vankov

J. Appl. Phys. 91, 5504–5506 (2002) https://doi.org/10.1063/1.1464204

Abstract

View articletitled, Effect of foil target thickness on fast proton generation driven by ultrashort-pulse laser

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ERRATA

Erratum: “Ion-channeling analysis of boron clusters in silicon” [J. Appl. Phys. 90, 4741 (2001)]

L. J. M. Selen; F. J. J. Janssen; L. J. van IJzendoorn; M. J. A. de Voigt; M. J. J. Theunissen; P. J. M. Smulders; T. J. Eijkemans

J. Appl. Phys. 91, 5507 (2002) https://doi.org/10.1063/1.1463446

Abstract

View articletitled, Erratum: “Ion-channeling analysis of boron clusters in silicon” [J. Appl. Phys. 90, 4741 (2001)]

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Erratum: “Measurement and analysis of nonhydrostatic lattice strain component in niobium to 145 GPa under various fluid pressure-transmitting media” [J. Appl. Phys. 90, 3269 (2001)]

Anil K. Singh; Takemura Kenichi

J. Appl. Phys. 91, 5507 (2002) https://doi.org/10.1063/1.1464659

Abstract

View articletitled, Erratum: “Measurement and analysis of nonhydrostatic lattice strain component in niobium to 145 GPa under various fluid pressure-transmitting media” [J. Appl. Phys. 90, 3269 (2001)]

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Erratum: “Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells” [J. Appl. Phys. 90, 5388 (2001)]

P. S. Plekhanov; M. D. Negoita; T. Y. Tan

J. Appl. Phys. 91, 5508 (2002) https://doi.org/10.1063/1.1464647

Abstract

View articletitled, Erratum: “Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells” [J. Appl. Phys. 90, 5388 (2001)]

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Erratum: “Memory device applications of a conjugated polymer: Role of space charges” [J. Appl. Phys. 91, 2433 (2002)]

Himadri S. Majumdar; Anirban Bandyopadhyay; Alberto Bolognesi; Amlan J. Pal

J. Appl. Phys. 91, 5508 (2002) https://doi.org/10.1063/1.1470663

Abstract

View articletitled, Erratum: “Memory device applications of a conjugated polymer: Role of space charges” [J. Appl. Phys. 91, 2433 (2002)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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ERRATA

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