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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Optical diffraction from a liquid crystal phase grating

C. V. Brown; Em. E. Kriezis; S. J. Elston

J. Appl. Phys. 91, 3495–3500 (2002) https://doi.org/10.1063/1.1446216

Abstract

View articletitled, Optical diffraction from a liquid crystal phase grating

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Large absolute and polarization-independent photonic band gaps for various lattice structures and rod shapes

Nobuhiko Susa

J. Appl. Phys. 91, 3501–3510 (2002) https://doi.org/10.1063/1.1450022

Abstract

View articletitled, Large absolute and polarization-independent photonic band gaps for various lattice structures and rod shapes

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Waveguide structures using one-dimensional photonic crystal

Hideaki Taniyama

J. Appl. Phys. 91, 3511–3515 (2002) https://doi.org/10.1063/1.1450035

Abstract

View articletitled, Waveguide structures using one-dimensional photonic crystal

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Current-directionality-induced giant absorption dichroism in III–V semiconductors and its potential for polarization control in vertical cavity surface-emitting lasers

B. S. Ryvkin; E. A. Avrutin; A. C. Walker

J. Appl. Phys. 91, 3516–3521 (2002) https://doi.org/10.1063/1.1450029

Abstract

View articletitled, Current-directionality-induced giant absorption dichroism in III–V semiconductors and its potential for polarization control in vertical cavity surface-emitting lasers

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Raman spectra of fluorine-doped silica glasses with various fictive temperatures

N. Shimodaira; K. Saito; A. J. Ikushima

J. Appl. Phys. 91, 3522–3525 (2002) https://doi.org/10.1063/1.1452779

Abstract

View articletitled, Raman spectra of fluorine-doped silica glasses with various fictive temperatures

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Terahertz electroluminescence from superlattice quantum cascade structures

Raffaele Colombelli; Axel Straub; Federico Capasso; Claire Gmachl; Myrtle I. Blakey; A. Michael Sergent; S. N. George Chu; Ken W. West; Loren N. Pfeiffer

J. Appl. Phys. 91, 3526–3529 (2002) https://doi.org/10.1063/1.1448393

Abstract

View articletitled, Terahertz electroluminescence from superlattice quantum cascade structures

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Cross-section set and chemistry model for the simulation of $c- C_{4} F_{8}$ plasma discharges

G. I. Font; W. L. Morgan; G. Mennenga

J. Appl. Phys. 91, 3530–3538 (2002) https://doi.org/10.1063/1.1448894

Abstract

View articletitled, Cross-section set and chemistry model for the simulation of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">c-</mi><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">F</mi><mrow><mn>8</mn></mrow></msub></math> plasma discharges

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Modeling argon inductively coupled plasmas: The electron energy distribution function and metastable kinetics

Mark W. Kiehlbauch; David B. Graves

J. Appl. Phys. 91, 3539–3546 (2002) https://doi.org/10.1063/1.1452772

Abstract

View articletitled, Modeling argon inductively coupled plasmas: The electron energy distribution function and metastable kinetics

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia

Hiromichi Ohta; Masahiro Orita; Masahiro Hirano; Hideo Hosono

J. Appl. Phys. 91, 3547–3550 (2002) https://doi.org/10.1063/1.1448873

Abstract

View articletitled, Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia

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Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering

S. Tungasmita; P. O. Å. Persson; L. Hultman; J. Birch

J. Appl. Phys. 91, 3551–3555 (2002) https://doi.org/10.1063/1.1448886

Abstract

View articletitled, Pulsed low-energy ion-assisted growth of epitaxial aluminum nitride layer on 6H-silicon carbide by reactive magnetron sputtering

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Low-temperature dependence of midinfrared optical constants of lead–germanium–telluride thin film

Bin Li; Jinchun Jiang; Su-ying Zhang; Feng-shan Zhang

J. Appl. Phys. 91, 3556–3561 (2002) https://doi.org/10.1063/1.1448866

Abstract

View articletitled, Low-temperature dependence of midinfrared optical constants of lead–germanium–telluride thin film

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Amorphization and annealing of ${LiTaO}_{3}$ single crystal irradiated with ${Ar}^{+}$ ions at 77 K

Z. Zhang; I. A. Rusakova; W. K. Chu

J. Appl. Phys. 91, 3562–3568 (2002) https://doi.org/10.1063/1.1450023

Abstract

View articletitled, Amorphization and annealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiTaO</mi><mrow><mn>3</mn></mrow></msub></math> single crystal irradiated with <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ar</mi><mrow><mi>+</mi></mrow></msup></math> ions at 77 K

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Study of argon characteristics in ion physical vapor deposition using molecular dynamics simulation

Chi-Chuan Hwang; Gwo-Jiunn Huang; Jee-Gong Chang; Shin-Pon Ju

J. Appl. Phys. 91, 3569–3578 (2002) https://doi.org/10.1063/1.1450032

Abstract

View articletitled, Study of argon characteristics in ion physical vapor deposition using molecular dynamics simulation

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Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent ${Si}_{0.7} {Ge}_{0.3}$ layers on Si(001)

T. Spila; P. Desjardins; A. Vailionis; H. Kim; N. Taylor; D. G. Cahill; J. E. Greene; S. Guillon; R. A. Masut

J. Appl. Phys. 91, 3579–3588 (2002) https://doi.org/10.1063/1.1448680

Abstract

View articletitled, Hydrogen-mediated quenching of strain-induced surface roughening during gas-source molecular beam epitaxy of fully-coherent <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.7</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.3</mtext></mrow></msub></math> layers on Si(001)

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Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties

D. Gall; C.-S. Shin; T. Spila; M. Odén; M. J. H. Senna; J. E. Greene; I. Petrov

J. Appl. Phys. 91, 3589–3597 (2002) https://doi.org/10.1063/1.1446239

Abstract

View articletitled, Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical properties

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Epitaxial growth and characterization of ${CuInSe}_{2}$ crystallographic polytypes

B. J. Stanbery; S. Kincal; S. Kim; C. H. Chang; S. P. Ahrenkiel; G. Lippold; H. Neumann; T. J. Anderson; O. D. Crisalle

J. Appl. Phys. 91, 3598–3604 (2002) https://doi.org/10.1063/1.1446234

Abstract

View articletitled, Epitaxial growth and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> crystallographic polytypes

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Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

James R. Petherbridge; Paul W. May; Gareth M. Fuge; Giles F. Robertson; Keith N. Rosser; Michael N. R. Ashfold

J. Appl. Phys. 91, 3605–3613 (2002) https://doi.org/10.1063/1.1448679

Abstract

View articletitled, Sulfur doping of diamond films: Spectroscopic, electronic, and gas-phase studies

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X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

O. F. Vyvenko; T. Buonassisi; A. A. Istratov; H. Hieslmair; A. C. Thompson; R. Schindler; E. R. Weber

J. Appl. Phys. 91, 3614–3617 (2002) https://doi.org/10.1063/1.1450026

Abstract

View articletitled, X-ray beam induced current—a synchrotron radiation based technique for the in situ analysis of recombination properties and chemical nature of metal clusters in silicon

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Anisotropic thermal expansion of ${BiB}_{3} O_{6}$

Bing Teng; Zhengping Wang; Huaidong Jiang; Xiufeng Cheng; Hong Liu; Xiaobo Hu; Shengming Dong; Jiyang Wang; Zongshu Shao

J. Appl. Phys. 91, 3618–3620 (2002) https://doi.org/10.1063/1.1450256

Abstract

View articletitled, Anisotropic thermal expansion of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BiB</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>6</mn></mrow></msub></math>

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Excitonic line broadening in PbSrSe thin films grown by molecular beam epitaxy

W. Z. Shen; H. Z. Wu; P. J. McCann

J. Appl. Phys. 91, 3621–3625 (2002) https://doi.org/10.1063/1.1448897

Abstract

View articletitled, Excitonic line broadening in PbSrSe thin films grown by molecular beam epitaxy

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Effect of low-energy $N_{2}^{+}$ ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

M. Garcı́a; I. Montero; J. M. Ripalda; L. Galán

J. Appl. Phys. 91, 3626–3631 (2002) https://doi.org/10.1063/1.1450027

Abstract

View articletitled, Effect of low-energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">N</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

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Model for the ${α→β}_{1}$ phase transition in phthalocyanine thin films

S. Yim; S. Heutz; T. S. Jones

J. Appl. Phys. 91, 3632–3636 (2002) https://doi.org/10.1063/1.1446218

Abstract

View articletitled, Model for the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>α→β</mi><mrow><mn>1</mn></mrow></msub></math> phase transition in phthalocyanine thin films

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Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces

Tatsuo Matsudo; Tomohiro Ohta; Tetsuji Yasuda; Masayasu Nishizawa; Noriyuki Miyata; Satoshi Yamasaki; Alexander A. Shklyaev; Masakazu Ichikawa

J. Appl. Phys. 91, 3637–3643 (2002) https://doi.org/10.1063/1.1452764

Abstract

View articletitled, Observation of oscillating behavior in the reflectance difference spectra of oxidized Si(001) surfaces

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C lattice site distributions in metastable ${Ge}_{1−y} C_{y}$ alloys grown on Ge(001) by molecular-beam epitaxy

S. Y. Park; J. D’Arcy-Gall; D. Gall; Y.-W. Kim; P. Desjardins; J. E. Greene

J. Appl. Phys. 91, 3644–3652 (2002) https://doi.org/10.1063/1.1448677

Abstract

View articletitled, C lattice site distributions in metastable <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi>y</mi></mrow></msub></math> alloys grown on Ge(001) by molecular-beam epitaxy

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Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride

Seok-Hee Lee; John C. Bravman; Jonathan C. Doan; Samantha Lee; Paul A. Flinn; Thomas N. Marieb

J. Appl. Phys. 91, 3653–3657 (2002) https://doi.org/10.1063/1.1450034

Abstract

View articletitled, Stress-induced and electromigration voiding in aluminum interconnects passivated with silicon nitride

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Band-edge emission of undoped and doped ZnO single crystals at room temperature

Naoki Ohashi; Takashi Sekiguchi; Kouichiroh Aoyama; Takeshi Ohgaki; Yoshihiro Terada; Isao Sakaguchi; Takaaki Tsurumi; Hajime Haneda

J. Appl. Phys. 91, 3658–3663 (2002) https://doi.org/10.1063/1.1450260

Abstract

View articletitled, Band-edge emission of undoped and doped ZnO single crystals at room temperature

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Growth and electrical characterization of ${GdSi}_{1.7}$ epilayers formed by channeled ion beam synthesis

S. M. Hogg; A. Vantomme; M. F. Wu

J. Appl. Phys. 91, 3664–3668 (2002) https://doi.org/10.1063/1.1448408

Abstract

View articletitled, Growth and electrical characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GdSi</mi><mrow><mtext>1.7</mtext></mrow></msub></math> epilayers formed by channeled ion beam synthesis

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Imaging of neutron incoherent scattering from hydrogen in metals

H. H. Chen-Mayer; D. F. R. Mildner; G. P. Lamaze; R. M. Lindstrom

J. Appl. Phys. 91, 3669–3674 (2002) https://doi.org/10.1063/1.1452769

Abstract

View articletitled, Imaging of neutron incoherent scattering from hydrogen in metals

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Thermomechanical analysis of the Taylor impact test

Diego J. Celentano

J. Appl. Phys. 91, 3675–3686 (2002) https://doi.org/10.1063/1.1435836

Abstract

View articletitled, Thermomechanical analysis of the Taylor impact test

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs

F. Dimroth; A. Howard; J. K. Shurtleff; G. B. Stringfellow

J. Appl. Phys. 91, 3687–3692 (2002) https://doi.org/10.1063/1.1450053

Abstract

View articletitled, Influence of Sb, Bi, Tl, and B on the incorporation of N in GaAs

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Penetration of the electromagnetic waves through doped lanthanum manganites

A. Rinkevich; A. Nossov; V. Ustinov; V. Vassiliev; S. Petukhov

J. Appl. Phys. 91, 3693–3697 (2002) https://doi.org/10.1063/1.1448883

Abstract

View articletitled, Penetration of the electromagnetic waves through doped lanthanum manganites

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Thermoelectric properties of the n-type filled skutterudite ${Ba}_{0.3} {Co}_{4} {Sb}_{12}$ doped with Ni

Jeffrey S. Dyck; Wei Chen; Ctirad Uher; Lidong Chen; Xinfeng Tang; Toshio Hirai

J. Appl. Phys. 91, 3698–3705 (2002) https://doi.org/10.1063/1.1450036

Abstract

View articletitled, Thermoelectric properties of the n-type filled skutterudite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>0.3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mn>12</mn></mrow></msub></math> doped with Ni

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Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

B. H. Leung; W. K. Fong; C. F. Zhu; Charles Surya

J. Appl. Phys. 91, 3706–3710 (2002) https://doi.org/10.1063/1.1436288

Abstract

View articletitled, Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy

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Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air

S. H. Wang; S. E. Mohney; R. Birkhahn

J. Appl. Phys. 91, 3711–3716 (2002) https://doi.org/10.1063/1.1448885

Abstract

View articletitled, Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air

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Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

E. Estacio; M. Bailon; A. Somintac; R. Sarmiento; A. Salvador

J. Appl. Phys. 91, 3717–3720 (2002) https://doi.org/10.1063/1.1450030

Abstract

View articletitled, Observation of high junction electric fields in modulation-doped GaAs/AlGaAs heterostructures by room temperature photoreflectance spectroscopy

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Free electron distribution in AlGaN/GaN heterojunction field-effect transistors

B. Jogai

J. Appl. Phys. 91, 3721–3729 (2002) https://doi.org/10.1063/1.1452773

Abstract

View articletitled, Free electron distribution in AlGaN/GaN heterojunction field-effect transistors

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Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures

Tsung-Hsing Yu; Kevin F. Brennan

J. Appl. Phys. 91, 3730–3736 (2002) https://doi.org/10.1063/1.1448889

Abstract

View articletitled, Monte Carlo calculation of two-dimensional electron dynamics in GaN–AlGaN heterostructures

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Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

W. J. Gross; D. Vasileska; D. K. Ferry

J. Appl. Phys. 91, 3737–3740 (2002) https://doi.org/10.1063/1.1453510

Abstract

View articletitled, Three-dimensional simulations of ultrasmall metal–oxide–semiconductor field-effect transistors: The role of the discrete impurities on the device terminal characteristics

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Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon

Yoshio Ohshita; Tuong Khanh Vu; Masafumi Yamaguchi

J. Appl. Phys. 91, 3741–3744 (2002) https://doi.org/10.1063/1.1445499

Abstract

View articletitled, Interstitial boron and oxygen related defects as the origin of the deep energy level in Czochralski-grown silicon

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Direct imaging of a biased $p-n$ junction with conductance mapping

Jeong Young Park; E. D. Williams; R. J. Phaneuf

J. Appl. Phys. 91, 3745–3749 (2002) https://doi.org/10.1063/1.1453507

Abstract

View articletitled, Direct imaging of a biased <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p-n</mi></math> junction with conductance mapping

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Influence of interstitial nitrogen on the structural and magnetic properties of ${FeCoV/TiN}_{x}$ multilayers

M. Senthil Kumar; P. Böni

J. Appl. Phys. 91, 3750–3758 (2002) https://doi.org/10.1063/1.1450259

Abstract

View articletitled, Influence of interstitial nitrogen on the structural and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">FeCoV/TiN</mi><mrow><mi>x</mi></mrow></msub></math> multilayers

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Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties

G. H. Yu; M. H. Li; F. W. Zhu; Q. K. Li; Y. Zhang; C. L. Chai; H. W. Jiang; W. Y. Lai

J. Appl. Phys. 91, 3759–3763 (2002) https://doi.org/10.1063/1.1450033

Abstract

View articletitled, Interlayer segregation of Cu atoms in Ta/NiFe/Cu/NiFe/FeMn/Ta spin-valve multilayers and its influence on magnetic properties

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Magnetic properties of Nd–Fe–Co(Cu)–Al–B amorphous alloys prepared by nonequilibrium techniques

G. Kumar; J. Eckert; S. Roth; W. Löser; S. Ram; L. Schultz

J. Appl. Phys. 91, 3764–3768 (2002) https://doi.org/10.1063/1.1448884

Abstract

View articletitled, Magnetic properties of Nd–Fe–Co(Cu)–Al–B amorphous alloys prepared by nonequilibrium techniques

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Effects of C content on the formation and magnetic properties of ${Nd}_{2} {Fe}_{14} (BC)/α- Fe$ nanocomposite magnets

Z. C. Wang; H. A. Davies; S. Z. Zhou

J. Appl. Phys. 91, 3769–3774 (2002) https://doi.org/10.1063/1.1450037

Abstract

View articletitled, Effects of C content on the formation and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>14</mn></mrow></msub><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">BC</mi><mi xmlns="">)/α-</mi><mi mathvariant="normal" xmlns="">Fe</mi></math> nanocomposite magnets

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Overcritical Meissner current densities in ${YBa}_{2} {Cu}_{3} O_{7}$ films in soft magnetic environments

H. Jarzina; Ch. Jooss; H. C. Freyhardt

J. Appl. Phys. 91, 3775–3778 (2002) https://doi.org/10.1063/1.1454221

Abstract

View articletitled, Overcritical Meissner current densities in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>7</mn></mrow></msub></math> films in soft magnetic environments

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Microstructure and electric properties of lead lanthanum titanate thin film under transverse electric fields

Z. T. Song; H. L. W. Chan; Y. P. Ding; N. Chong; C. L. Choy

J. Appl. Phys. 91, 3779–3784 (2002) https://doi.org/10.1063/1.1448867

Abstract

View articletitled, Microstructure and electric properties of lead lanthanum titanate thin film under transverse electric fields

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Elastic and piezoelectric fields around a quantum dot: Fully coupled or semicoupled model?

E. Pan

J. Appl. Phys. 91, 3785–3796 (2002) https://doi.org/10.1063/1.1448869

Abstract

View articletitled, Elastic and piezoelectric fields around a quantum dot: Fully coupled or semicoupled model?

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Scanning force microscopy of domain structures in $Pb ({Zn}_{1/3} {Nb}_{2/3}) O_{3} -8%$ ${PbTiO}_{3}$ and $Pb ({Mg}_{1/3} {Nb}_{2/3}) O_{3} -29%$ ${PbTiO}_{3}$

M. Abplanalp; D. Barošová; P. Bridenbaugh; J. Erhart; J. Fousek; P. Günter; J. Nosek; M. Šulc

J. Appl. Phys. 91, 3797–3805 (2002) https://doi.org/10.1063/1.1446655

Abstract

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A theory of ferroelectric hysteresis with a superimposed stress

W. F. Li; G. J. Weng

J. Appl. Phys. 91, 3806–3815 (2002) https://doi.org/10.1063/1.1448397

Abstract

View articletitled, A theory of ferroelectric hysteresis with a superimposed stress

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Domain polarity and temperature induced potential inversion on the ${BaTiO}_{3} (100)$ surface

Sergei V. Kalinin; C. Y. Johnson; Dawn A. Bonnell

J. Appl. Phys. 91, 3816–3823 (2002) https://doi.org/10.1063/1.1446230

Abstract

View articletitled, Domain polarity and temperature induced potential inversion on the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mtext xmlns="">(100)</mtext></math> surface

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NANOSCALE SCIENCE AND DESIGN

Individually addressable vertically aligned carbon nanofiber-based electrochemical probes

M. A. Guillorn; T. E. McKnight; A. Melechko; V. I. Merkulov; P. F. Britt; D. W. Austin; D. H. Lowndes; M. L. Simpson

J. Appl. Phys. 91, 3824–3828 (2002) https://doi.org/10.1063/1.1448671

Abstract

View articletitled, Individually addressable vertically aligned carbon nanofiber-based electrochemical probes

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Characterization of reflectivity inversion, α- and β-phase transitions and nanostructure formation in hydrogen activated thin Pd films on silicon based substrates

K. Kalli; A. Othonos; C. Christofides

J. Appl. Phys. 91, 3829–3840 (2002) https://doi.org/10.1063/1.1417992

Abstract

View articletitled, Characterization of reflectivity inversion, α- and β-phase transitions and nanostructure formation in hydrogen activated thin Pd films on silicon based substrates

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Nanowear in scanning force microscopy: Information on deposits formed in and downstream of a hexane plasma

F. Dinelli; G. J. Leggett; M. R. Alexander

J. Appl. Phys. 91, 3841–3846 (2002) https://doi.org/10.1063/1.1446220

Abstract

View articletitled, Nanowear in scanning force microscopy: Information on deposits formed in and downstream of a hexane plasma

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Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition

G. S. Choi; Y. S. Cho; S. Y. Hong; J. B. Park; K. H. Son; D. J. Kim

J. Appl. Phys. 91, 3847–3854 (2002) https://doi.org/10.1063/1.1448877

Abstract

View articletitled, Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition

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DEVICE PHYSICS (PACS 85)

Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

Mutsumi Kimura; Satoshi Inoue; Tatsuya Shimoda; Simon W.-B. Tam; O. K. Basil Lui; Piero Migliorato; Ryoichi Nozawa

J. Appl. Phys. 91, 3855–3858 (2002) https://doi.org/10.1063/1.1446238

Abstract

View articletitled, Extraction of trap states in laser-crystallized polycrystalline-silicon thin-film transistors and analysis of degradation by self-heating

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Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

G. Saint-Girons; G. Patriarche; A. Mereuta; I. Sagnes

J. Appl. Phys. 91, 3859–3863 (2002) https://doi.org/10.1063/1.1448887

Abstract

View articletitled, Origin of the bimodal distribution of low-pressure metal-organic-vapor-phase-epitaxy grown InGaAs/GaAs quantum dots

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Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts to n-SiC for high temperature and pulsed power device applications

M. W. Cole; P. C. Joshi; C. Hubbard; J. D. Demaree; M. Ervin

J. Appl. Phys. 91, 3864–3868 (2002) https://doi.org/10.1063/1.1450024

Abstract

View articletitled, Thermal stability and performance reliability of Pt/Ti/WSi/Ni ohmic contacts to n-SiC for high temperature and pulsed power device applications

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Characterization of the hot electron distribution function using six moments

T. Grasser; H. Kosina; C. Heitzinger; S. Selberherr

J. Appl. Phys. 91, 3869–3879 (2002) https://doi.org/10.1063/1.1450257

Abstract

View articletitled, Characterization of the hot electron distribution function using six moments

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Theoretical analysis of an anisotropic metal–semiconductor–metal optoelectronic mixer

H. Shen; K. Aliberti

J. Appl. Phys. 91, 3880–3890 (2002) https://doi.org/10.1063/1.1448676

Abstract

View articletitled, Theoretical analysis of an anisotropic metal–semiconductor–metal optoelectronic mixer

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Improved interfaces and magnetic properties in spin valves using ${Ni}_{80} {Fe}_{20}$ seed layer

Edward J. Repetski; David X. Yang; Harsh Deep Chopra; P. J. Chen; W. F. Egelhoff, Jr.

J. Appl. Phys. 91, 3891–3895 (2002) https://doi.org/10.1063/1.1448892

Abstract

View articletitled, Improved interfaces and magnetic properties in spin valves using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mn>80</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>20</mn></mrow></msub></math> seed layer

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Hydrogen detection on bare ${SiO}_{2}$ between metal gates

D. Filippini; I. Lundström

J. Appl. Phys. 91, 3896–3903 (2002) https://doi.org/10.1063/1.1450025

Abstract

View articletitled, Hydrogen detection on bare <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> between metal gates

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Remote-plasma chemical vapor deposition of conformal ${ZrB}_{2}$ films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

Junghwan Sung; Dean M. Goedde; Gregory S. Girolami; John R. Abelson

J. Appl. Phys. 91, 3904–3911 (2002) https://doi.org/10.1063/1.1436296

Abstract

View articletitled, Remote-plasma chemical vapor deposition of conformal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrB</mi><mrow><mn>2</mn></mrow></msub></math> films at low temperature: A promising diffusion barrier for ultralarge scale integrated electronics

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Patterned heteroepitaxial processing applied to ZnSe and ${ZnS}_{0.02} {Se}_{0.98}$ on GaAs (001)

X. G. Zhang; A. Rodriguez; P. Li; F. C. Jain; J. E. Ayers

J. Appl. Phys. 91, 3912–3917 (2002) https://doi.org/10.1063/1.1446227

Abstract

View articletitled, Patterned heteroepitaxial processing applied to ZnSe and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZnS</mi><mrow><mtext>0.02</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mtext>0.98</mtext></mrow></msub></math> on GaAs (001)

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Electron field emission from diamond-like carbon films and a patterned array by using a Ti interfacial layer

D. S. Mao; X. H. Liu; X. Wang; W. Zhu

J. Appl. Phys. 91, 3918–3921 (2002) https://doi.org/10.1063/1.1448405

Abstract

View articletitled, Electron field emission from diamond-like carbon films and a patterned array by using a Ti interfacial layer

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COMMUNICATIONS

Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition

Bertrand Theys; Vincent Sallet; François Jomard; Alain Lusson; Jean-François Rommeluère; Zéphyrin Teukam

J. Appl. Phys. 91, 3922–3924 (2002) https://doi.org/10.1063/1.1452778

Abstract

View articletitled, Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition

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Self-assembled InAs quantum wires on InP(001)

Haeyeon Yang; Xiaodong Mu; Ioulia B. Zotova; Yujie J. Ding; Gregory J. Salamo

J. Appl. Phys. 91, 3925–3927 (2002) https://doi.org/10.1063/1.1448862

Abstract

View articletitled, Self-assembled InAs quantum wires on InP(001)

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Blistering of H-implanted GaN

S. O. Kucheyev; J. S. Williams; C. Jagadish; J. Zou; G. Li

J. Appl. Phys. 91, 3928–3930 (2002) https://doi.org/10.1063/1.1430533

Abstract

View articletitled, Blistering of H-implanted GaN

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Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

A. H. Deng; Y. Y. Shan; S. Fung; C. D. Beling

J. Appl. Phys. 91, 3931–3933 (2002) https://doi.org/10.1063/1.1436551

Abstract

View articletitled, Application of positron annihilation lifetime technique to the study of deep level transients in semiconductors

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Study on bias-enhanced nucleation of diamonds by simulating the time dependence of bias current

Kuoguang Perng; Kuo-Shung Liu; I-Nan Lin

J. Appl. Phys. 91, 3934–3936 (2002) https://doi.org/10.1063/1.1452780

Abstract

View articletitled, Study on bias-enhanced nucleation of diamonds by simulating the time dependence of bias current

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Near-field photocurrent measurements on boron-implanted silicon

V. Marocchi; A. Cricenti; P. Perfetti; P. Chiaradia; V. Raineri; C. Spinella

J. Appl. Phys. 91, 3937–3939 (2002) https://doi.org/10.1063/1.1446654

Abstract

View articletitled, Near-field photocurrent measurements on boron-implanted silicon

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X-ray spectrometry investigation of electrical isolation in GaN

S. O. Kucheyev; M. Toth; M. R. Phillips; J. S. Williams; C. Jagadish; G. Li

J. Appl. Phys. 91, 3940–3942 (2002) https://doi.org/10.1063/1.1452759

Abstract

View articletitled, X-ray spectrometry investigation of electrical isolation in GaN

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Passivation-mediated growth of Co on Se, S and O rich GaAs surfaces: A potential approach to control interface crystallinity and magnetic continuity

Krishna G. Nath; Fumihiko Maeda; Satoru Suzuki; Yoshio Watanabe

J. Appl. Phys. 91, 3943–3945 (2002) https://doi.org/10.1063/1.1452760

Abstract

View articletitled, Passivation-mediated growth of Co on Se, S and O rich GaAs surfaces: A potential approach to control interface crystallinity and magnetic continuity

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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