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Issues
1 March 2002
ISSN 0021-8979
EISSN 1089-7550
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Experimental determination of the internal quantum efficiency of AlGaInP microcavity light-emitting diodes
J. Appl. Phys. 91, 2563–2568 (2002)
https://doi.org/10.1063/1.1433938
Omnidirectional optical mirror in a cladded-superlattice structure
J. Appl. Phys. 91, 2569–2572 (2002)
https://doi.org/10.1063/1.1433188
Diffraction response of a low-temperature-grown photorefractive multiple quantum well modulator
J. Appl. Phys. 91, 2578–2586 (2002)
https://doi.org/10.1063/1.1447329
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
Transition of the sheath structure in an electrostatic probe from electropositive to electronegative plasma
J. Appl. Phys. 91, 2587–2593 (2002)
https://doi.org/10.1063/1.1430541
Plasma molding over surface topography: Energy and angular distribution of ions extracted out of large holes
J. Appl. Phys. 91, 2594–2603 (2002)
https://doi.org/10.1063/1.1435423
Effect of electron density on shock wave propagation in optically pumped plasmas
J. Appl. Phys. 91, 2604–2610 (2002)
https://doi.org/10.1063/1.1435829
Gas-pressure dependence of terahertz-pulse generation in a laser-generated nitrogen plasma
J. Appl. Phys. 91, 2611–2614 (2002)
https://doi.org/10.1063/1.1433925
A simple operation of a plasma-electrode pockel’s cell for the laser megajoules
J. Appl. Phys. 91, 2631–2636 (2002)
https://doi.org/10.1063/1.1446243
Electron transport properties and collision cross sections in
J. Appl. Phys. 91, 2637–2647 (2002)
https://doi.org/10.1063/1.1433189
On the self-consistent modeling of a traveling wave sustained nitrogen discharge
J. Appl. Phys. 91, 2648–2661 (2002)
https://doi.org/10.1063/1.1446229
Electron energy deposition in an electron-beam pumped KrF amplifier: Impact of beam power and energy
J. Appl. Phys. 91, 2662–2677 (2002)
https://doi.org/10.1063/1.1448409
Direct-current glow discharges in atmospheric pressure air plasmas
J. Appl. Phys. 91, 2678–2686 (2002)
https://doi.org/10.1063/1.1435421
Three-dimensional simulation of an inductively coupled plasma reactor
J. Appl. Phys. 91, 2687–2696 (2002)
https://doi.org/10.1063/1.1448673
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
Characterization of strained heterostructures annealed in oxygen or argon
J. Appl. Phys. 91, 2708–2712 (2002)
https://doi.org/10.1063/1.1436290
Three-dimensional investigations of electrical barriers using electron beam induced current measurements
J. Appl. Phys. 91, 2713–2724 (2002)
https://doi.org/10.1063/1.1432124
Excitation of right- and left-circularly polarized photoluminescence in silicon-based luminescent materials
J. Appl. Phys. 91, 2725–2728 (2002)
https://doi.org/10.1063/1.1434544
Brillouin light scattering study on the elastic properties of thick sputtered c-BN films
J. Appl. Phys. 91, 2729–2736 (2002)
https://doi.org/10.1063/1.1432772
Elastic properties of chemically ordered thin films
J. Appl. Phys. 91, 2737–2741 (2002)
https://doi.org/10.1063/1.1433924
X-ray diffuse scattering of -type porous silicon
J. Appl. Phys. 91, 2742–2752 (2002)
https://doi.org/10.1063/1.1429791
Effects of viscous flow on residual stresses in film/substrate systems
J. Appl. Phys. 91, 2760–2765 (2002)
https://doi.org/10.1063/1.1445282
Study of photoluminescence in lead tungstates doped with and ions
J. Appl. Phys. 91, 2766–2768 (2002)
https://doi.org/10.1063/1.1436295
X-ray diffraction patterns from samples in the laser-heated diamond anvil cell
J. Appl. Phys. 91, 2769–2778 (2002)
https://doi.org/10.1063/1.1435837
Tailoring the surface morphology of amorphous thin films by appropriately chosen deposition conditions
J. Appl. Phys. 91, 2779–2784 (2002)
https://doi.org/10.1063/1.1446235
Complete characterization of doubly doped scintillators
M. Nikl; P. Bohacek; E. Mihokova; N. Solovieva; A. Vedda; M. Martini; G. P. Pazzi; P. Fabeni; M. Kobayashi
J. Appl. Phys. 91, 2791–2797 (2002)
https://doi.org/10.1063/1.1436561
Evaluation of nematic liquid-crystal director-orientation using shear horizontal wave propagation
J. Appl. Phys. 91, 2798–2802 (2002)
https://doi.org/10.1063/1.1445285
Experimental determination of positron-related surface characteristics of -SiC
J. Appl. Phys. 91, 2818–2826 (2002)
https://doi.org/10.1063/1.1435838
Refractive index of sapphire at 532 nm under shock compression and release
J. Appl. Phys. 91, 2833–2841 (2002)
https://doi.org/10.1063/1.1446219
Effect of degree of amorphization of Si on the formation of titanium silicide
J. Appl. Phys. 91, 2842–2846 (2002)
https://doi.org/10.1063/1.1432768
The configuration of Cu centers in electroluminescent SrS:Cu phosphors: an x-ray absorption fine structure and optical study
D. Wruck; R. Boyn; M. Wienecke; F. Henneberger; U. Troppenz; B. Hüttl; W. Bohne; B. Reinhold; H.-E. Mahnke
J. Appl. Phys. 91, 2847–2852 (2002)
https://doi.org/10.1063/1.1433933
Nanostructure formation by localized decomposition of on surfaces
J. Appl. Phys. 91, 2853–2858 (2002)
https://doi.org/10.1063/1.1447326
Optical properties of epitaxial ZnMnTe and ZnMgTe films for a wide range of alloy compositions
J. Appl. Phys. 91, 2859–2865 (2002)
https://doi.org/10.1063/1.1448402
Raman scattering in GaN pillar arrays
F. Demangeot; J. Gleize; J. Frandon; M. A. Renucci; M. Kuball; D. Peyrade; L. Manin-Ferlazzo; Y. Chen; N. Grandjean
J. Appl. Phys. 91, 2866–2869 (2002)
https://doi.org/10.1063/1.1445492
Real-time photoluminescence evaluation of low-temperature photodarkening effect in amorphous SeGe
J. Appl. Phys. 91, 2870–2873 (2002)
https://doi.org/10.1063/1.1447328
Quantitative photothermal characterization of ion-implanted layers in Si
J. Appl. Phys. 91, 2874–2882 (2002)
https://doi.org/10.1063/1.1448410
Cathodoluminescence identification of donor–acceptor related emissions in as-grown layers
J. Appl. Phys. 91, 2890–2895 (2002)
https://doi.org/10.1063/1.1436293
Stimulated emission in blue-emitting -implanted films?
K. Luterová; I. Pelant; I. Mikulskas; R. Tomasiunas; D. Muller; J.-J. Grob; J.-L. Rehspringer; B. Hönerlage
J. Appl. Phys. 91, 2896–2900 (2002)
https://doi.org/10.1063/1.1447308
Effect of a titanium cap in reducing interfacial oxides in the formation of nickel silicide
J. Appl. Phys. 91, 2901–2909 (2002)
https://doi.org/10.1063/1.1448672
Laser interference structuring of films on GaAs
J. Appl. Phys. 91, 2916–2920 (2002)
https://doi.org/10.1063/1.1448674
Electron energy loss spectroscopy of interfacial layer formation in films deposited directly on Si(001)
J. Appl. Phys. 91, 2921–2928 (2002)
https://doi.org/10.1063/1.1446232
Spectroscopic properties of in GaN
J. Appl. Phys. 91, 2929–2935 (2002)
https://doi.org/10.1063/1.1436297
Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
J. Appl. Phys. 91, 2936–2941 (2002)
https://doi.org/10.1063/1.1446231
Electronic polarizability, optical basicity, and interaction parameter of and related glasses
J. Appl. Phys. 91, 2942–2950 (2002)
https://doi.org/10.1063/1.1436292
Influence of segregation on the measurement of stress in thin films
J. Appl. Phys. 91, 2951–2958 (2002)
https://doi.org/10.1063/1.1447327
Anomalous field enhancement from the superfocusing of surface plasmons at contacting silver surfaces
J. Appl. Phys. 91, 2965–2968 (2002)
https://doi.org/10.1063/1.1428092
Excimer laser crystallization of amorphous silicon on molybdenum coated glass substrates
J. Appl. Phys. 91, 2969–2973 (2002)
https://doi.org/10.1063/1.1448678
Photo- and low-voltage cathodoluminescence in lithium zinc gallate blue and green thin-film phosphors
J. Appl. Phys. 91, 2974–2977 (2002)
https://doi.org/10.1063/1.1448863
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
Electrical properties of junctions formed by plasma enhanced epitaxial growth
J. Appl. Phys. 91, 2984–2988 (2002)
https://doi.org/10.1063/1.1436559
Current–voltage characteristics of polar heterostructure junctions
J. Appl. Phys. 91, 2989–2993 (2002)
https://doi.org/10.1063/1.1434542
Properties of a hole trap in n-type hexagonal GaN
J. Appl. Phys. 91, 2998–3001 (2002)
https://doi.org/10.1063/1.1433935
Shock wave demagnetization of hard ferrimagnetics
J. Appl. Phys. 91, 3007–3009 (2002)
https://doi.org/10.1063/1.1431434
Energy level alignment and two-dimensional structure of pentacene on Au(111) surfaces
J. Appl. Phys. 91, 3010–3014 (2002)
https://doi.org/10.1063/1.1445286
Determination of the occupancy level of the DX center resonant with the conduction band in Te-doped AlGaSb
J. Appl. Phys. 91, 3015–3020 (2002)
https://doi.org/10.1063/1.1445495
Resonant electromagnetic field cavity between scanning tunneling microscope tips and substrate
J. Appl. Phys. 91, 3028–3036 (2002)
https://doi.org/10.1063/1.1447325
Magnetoresistive effect in p-type semiconducting diamond films
J. Appl. Phys. 91, 3044–3048 (2002)
https://doi.org/10.1063/1.1446662
Multiple subband transitions and evidence for population inversion in InAs/In(As,Sb) heterostructures
J. Appl. Phys. 91, 3067–3073 (2002)
https://doi.org/10.1063/1.1445493
Electronic structure and optical properties of
J. Appl. Phys. 91, 3074–3078 (2002)
https://doi.org/10.1063/1.1445498
Band alignments in metal–oxide–silicon structures with atomic-layer deposited and
J. Appl. Phys. 91, 3079–3084 (2002)
https://doi.org/10.1063/1.1436299
Surface relaxation effects on the properties of porous silicon
J. Appl. Phys. 91, 3085–3089 (2002)
https://doi.org/10.1063/1.1446658
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Singular current density in the planar superconductor/normal metal/superconductor junction
J. Appl. Phys. 91, 3090–3094 (2002)
https://doi.org/10.1063/1.1428803
Enhanced anisotropic magnetoresistance in Co/Pt multilayers due to the interface effect of inserted Ni layers
J. Appl. Phys. 91, 3111–3113 (2002)
https://doi.org/10.1063/1.1436291
Transition of ferromagnetism to superparamagnetism in Fe/Tb multilayers
J. Appl. Phys. 91, 3114–3119 (2002)
https://doi.org/10.1063/1.1445490
Saturation magnetostriction of an ultrathin CoFe free-layer on double-layered underlayers
J. Appl. Phys. 91, 3120–3124 (2002)
https://doi.org/10.1063/1.1434551
Laser damage studies in zinc (tris) thiourea sulfate: Nonlinear optical crystal
J. Appl. Phys. 91, 3125–3128 (2002)
https://doi.org/10.1063/1.1436287
Influence of exchange on signal-to-noise ratio in longitudinal recording media
J. Appl. Phys. 91, 3129–3138 (2002)
https://doi.org/10.1063/1.1433921
Magnetic and transport behaviors of under pressure, magnetic field, and Fe doping
J. Appl. Phys. 91, 3139–3144 (2002)
https://doi.org/10.1063/1.1446228
Effect of nitridation on magnetic properties of thin film
J. Appl. Phys. 91, 3145–3149 (2002)
https://doi.org/10.1063/1.1436301
Step-induced magnetic-hysteresis anisotropy in ferromagnetic thin films
J. Appl. Phys. 91, 3150–3153 (2002)
https://doi.org/10.1063/1.1433179
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Study by high resolution electron microscopy and electron diffraction of the ferroelectric ceramic
J. Appl. Phys. 91, 3154–3159 (2002)
https://doi.org/10.1063/1.1432471
thin films and their ferroelectric fatigue behaviors under varying switching pulse widths and frequencies
J. Appl. Phys. 91, 3160–3164 (2002)
https://doi.org/10.1063/1.1435414
Ferroelectric phase transitions and dynamical behavior in superlattices by molecular-dynamics simulation
J. Appl. Phys. 91, 3165–3171 (2002)
https://doi.org/10.1063/1.1435826
Second-harmonic generation study of domain walls in films with large dielectric permittivity
J. Appl. Phys. 91, 3172–3177 (2002)
https://doi.org/10.1063/1.1445497
Microstructures and surface step-induced antiphase boundaries in epitaxial ferroelectric thin film on MgO
J. Appl. Phys. 91, 3188–3192 (2002)
https://doi.org/10.1063/1.1446221
Generalized effective medium theory and dielectric relaxation in particle-filled polymeric resins
J. Appl. Phys. 91, 3197–3204 (2002)
https://doi.org/10.1063/1.1447307
NANOSCALE SCIENCE AND DESIGN
Nanowires of four epitaxial hexagonal silicides grown on Si(001)
J. Appl. Phys. 91, 3213–3218 (2002)
https://doi.org/10.1063/1.1428807
Determination of the eigenfunctions of arbitrary nanostructures using time domain simulation
J. Appl. Phys. 91, 3219–3226 (2002)
https://doi.org/10.1063/1.1445277
One-phonon Raman scattering studies of chains of crystalline-Si nanospheres
J. Appl. Phys. 91, 3232–3235 (2002)
https://doi.org/10.1063/1.1446222
Highly ordered monocrystalline silver nanowire arrays
J. Appl. Phys. 91, 3243–3247 (2002)
https://doi.org/10.1063/1.1435830
Correlation between photoluminescence properties and morphology of laser-ablated nanostructured films
J. Appl. Phys. 91, 3248–3254 (2002)
https://doi.org/10.1063/1.1446217
Thermal stability of stacked self-assembled InP quantum dots in GaInP
J. Appl. Phys. 91, 3255–3260 (2002)
https://doi.org/10.1063/1.1446656
Picosecond ultrasonics study of the vibrational modes of a nanostructure
J. Appl. Phys. 91, 3261–3267 (2002)
https://doi.org/10.1063/1.1435831
Pulsed-laser assisted nanopatterning of metallic layers combined with atomic force microscopy
J. Appl. Phys. 91, 3268–3274 (2002)
https://doi.org/10.1063/1.1448882
Nanoscale limited area growth of InAs islands on GaAs(001) by molecular beam epitaxy
J. Appl. Phys. 91, 3282–3288 (2002)
https://doi.org/10.1063/1.1436303
Mechanisms of visible photoluminescence from nanoscale silicon cones
J. Appl. Phys. 91, 3294–3298 (2002)
https://doi.org/10.1063/1.1448394
Photonic-band-gap properties of two-dimensional lattices of Si nanopillars
J. Appl. Phys. 91, 3299–3305 (2002)
https://doi.org/10.1063/1.1446659
DEVICE PHYSICS (PACS 85)
Effects of proton irradiation on InGaP solar cells
Nethaji Dharmarasu; A. Khan; Masafumi Yamaguchi; Tatsuya Takamoto; Takeshi Ohshima; Hisayoshi Itoh; Mitsuru Imaizumi; Sumio Matsuda
J. Appl. Phys. 91, 3306–3311 (2002)
https://doi.org/10.1063/1.1445276
Scallop formation and dissolution of Cu–Sn intermetallic compound during solder reflow
J. Appl. Phys. 91, 3312–3317 (2002)
https://doi.org/10.1063/1.1445283
Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors
J. Appl. Phys. 91, 3318–3323 (2002)
https://doi.org/10.1063/1.1445494
Improved light out-coupling in organic light emitting diodes employing ordered microlens arrays
J. Appl. Phys. 91, 3324–3327 (2002)
https://doi.org/10.1063/1.1435422
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Comparison of and for direct detection active matrix x-ray image sensors
R. A. Street; S. E. Ready; K. Van Schuylenbergh; J. Ho; J. B. Boyce; P. Nylen; K. Shah; L. Melekhov; H. Hermon
J. Appl. Phys. 91, 3345–3355 (2002)
https://doi.org/10.1063/1.1436298
Comparative intra- versus extra-cavity laser cooling efficiencies
J. Appl. Phys. 91, 3356–3362 (2002)
https://doi.org/10.1063/1.1433922
Investigation of a density modulated electron beam emitted by a ferroelectric plasma cathode
J. Appl. Phys. 91, 3369–3376 (2002)
https://doi.org/10.1063/1.1448670
Statistical modeling of the spectral performance of a two-dimensional array of gamma-ray spectrometers
J. Appl. Phys. 91, 3384–3397 (2002)
https://doi.org/10.1063/1.1432769
Electronic and vibronic properties of Mg-doped GaN: The influence of etching and annealing
J. Appl. Phys. 91, 3398–3407 (2002)
https://doi.org/10.1063/1.1446236
Mechanism of atomic layer deposition of on the silicon (100)-2×1 surface using and as precursors
J. Appl. Phys. 91, 3408–3414 (2002)
https://doi.org/10.1063/1.1436294
Structural investigation of graphitic foam
J. Appl. Phys. 91, 3415–3420 (2002)
https://doi.org/10.1063/1.1448675
Photoinduced surface relief formation on azopolymer films: A driving force and formed relief profile
J. Appl. Phys. 91, 3421–3430 (2002)
https://doi.org/10.1063/1.1432482
High-current electron beam generation by a pulsed hollow cathode
J. Appl. Phys. 91, 3431–3443 (2002)
https://doi.org/10.1063/1.1448895
Subsurface reactions of silicon nitride in a highly selective etching process of silicon oxide over silicon nitride
J. Appl. Phys. 91, 3452–3458 (2002)
https://doi.org/10.1063/1.1448870
Hydrogenated amorphous and microcrystalline GaAs films prepared by radio-frequency magnetron sputtering
J. Appl. Phys. 91, 3459–3467 (2002)
https://doi.org/10.1063/1.1446241
COMMUNICATIONS
Geometrical confinement of a domain wall in a nanocontact between two NiFe wires
J. Appl. Phys. 91, 3468–3470 (2002)
https://doi.org/10.1063/1.1436552
Site-occupying behavior of boron in compensated p-type 4H–SiC grown by sublimation epitaxy
J. Appl. Phys. 91, 3471–3473 (2002)
https://doi.org/10.1063/1.1433931
Controlling the electron tunneling through InAs self-assembled dots
J. Appl. Phys. 91, 3474–3476 (2002)
https://doi.org/10.1063/1.1446226
Nanocrystalline diamond formation during argon ion irradiation of graphite
J. Appl. Phys. 91, 3480–3482 (2002)
https://doi.org/10.1063/1.1448392
Effect of the number of wells on optical and structural properties in InGaN quantum well structures grown by metalorganic chemical vapor deposition
H.-K. Yuh; E. Yoon; S. K. Shee; J. B. Lam; C. K. Choi; G. H. Gainer; G. H. Park; S. J. Hwang; J. J. Song
J. Appl. Phys. 91, 3483–3485 (2002)
https://doi.org/10.1063/1.1450051
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.