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APPLIED PHYSICS REVIEWS

Photoassisted scanning tunneling microscopy

Stefan Grafström

J. Appl. Phys. 91, 1717–1753 (2002) https://doi.org/10.1063/1.1432113

Abstract

View articletitled, Photoassisted scanning tunneling microscopy

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Stimulated emission, excited state absorption, and laser modeling of the ${Nd}^{3+} {:Ca}_{3} {Ga}_{2} {Ge}_{3} O_{12}$ laser system

J. J. Romero; D. Jaque; F. Ramos-Lara; G. Boulon; Y. Guyot; U. Caldiño; J. Garcı́a Solé

J. Appl. Phys. 91, 1754–1760 (2002) https://doi.org/10.1063/1.1428795

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Radiometric efficiency of low pressure barium discharges

X. L. Peng; J. J. Curry; G. G. Lister; J. E. Lawler

J. Appl. Phys. 91, 1761–1771 (2002) https://doi.org/10.1063/1.1429790

Abstract

View articletitled, Radiometric efficiency of low pressure barium discharges

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Feasibility study of a low pressure barium discharge lamp

J. Laski; G. G. Lister; F. Palmer; P. E. Moskowitz; J. J. Curry

J. Appl. Phys. 91, 1772–1779 (2002) https://doi.org/10.1063/1.1429789

Abstract

View articletitled, Feasibility study of a low pressure barium discharge lamp

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Fiber optic diagnostic techniques applied to electrical discharge machining sparks

B. W. Pillans; M. H. Evensen; H. F. Taylor; P. T. Eubank; Lianxi Ma

J. Appl. Phys. 91, 1780–1786 (2002) https://doi.org/10.1063/1.1425449

Abstract

View articletitled, Fiber optic diagnostic techniques applied to electrical discharge machining sparks

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Relaxation phenomena in pulsed discharges

Th. Daube; P. Meyer; K.-U. Riemann; H. Schmitz

J. Appl. Phys. 91, 1787–1796 (2002) https://doi.org/10.1063/1.1430895

Abstract

View articletitled, Relaxation phenomena in pulsed discharges

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Characterization of inductively coupled plasma in the ionized physical vapor deposition system

K.-F. Chiu; Z. H. Barber

J. Appl. Phys. 91, 1797–1803 (2002) https://doi.org/10.1063/1.1430897

Abstract

View articletitled, Characterization of inductively coupled plasma in the ionized physical vapor deposition system

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Inductively coupled plasmas sustained by an internal oscillating current

E. L. Tsakadze; K. N. Ostrikov; S. Xu; R. Storer; H. Sugai

J. Appl. Phys. 91, 1804–1813 (2002) https://doi.org/10.1063/1.1430893

Abstract

View articletitled, Inductively coupled plasmas sustained by an internal oscillating current

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Numerical investigation of thermophoretic effects on cluster transport during thermal plasma deposition process

P. Han; T. Yoshida

J. Appl. Phys. 91, 1814–1818 (2002) https://doi.org/10.1063/1.1433182

Abstract

View articletitled, Numerical investigation of thermophoretic effects on cluster transport during thermal plasma deposition process

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Targeting mass-selected cluster ions for the deposition of advanced carbonaceous materials using an inductively coupled plasma

D. A. Zeze; S. R. P. Silva; N. M. D. Brown; A. M. Joyce; C. A. Anderson

J. Appl. Phys. 91, 1819–1827 (2002) https://doi.org/10.1063/1.1435417

Abstract

View articletitled, Targeting mass-selected cluster ions for the deposition of advanced carbonaceous materials using an inductively coupled plasma

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Evidence for the physical basis and universality of the elimination of particulates using dual-laser ablation. I. Dynamic time-resolved target melt studies, and film growth of $Y_{2} O_{3}$ and ZnO

Pritish Mukherjee; Shudong Chen; John B. Cuff; Palanikumaran Sakthivel; Sarath Witanachchi

J. Appl. Phys. 91, 1828–1836 (2002) https://doi.org/10.1063/1.1435418

Abstract

View articletitled, Evidence for the physical basis and universality of the elimination of particulates using dual-laser ablation. I. Dynamic time-resolved target melt studies, and film growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> and ZnO

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Evidence for the physical basis and universality of the elimination of particulates using dual-laser ablation. II. Dynamic time-resolved target reflectivity of metals and film growth of Zn

Pritish Mukherjee; Shudong Chen; John B. Cuff; Sarath Witanachchi

J. Appl. Phys. 91, 1837–1844 (2002) https://doi.org/10.1063/1.1435419

Abstract

View articletitled, Evidence for the physical basis and universality of the elimination of particulates using dual-laser ablation. II. Dynamic time-resolved target reflectivity of metals and film growth of Zn

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

$n^{+} - GaN$ formed by Si implantation into p-GaN

J. K. Sheu; C. J. Tun; M. S. Tsai; C. C. Lee; G. C. Chi; S. J. Chang; Y. K. Su

J. Appl. Phys. 91, 1845–1848 (2002) https://doi.org/10.1063/1.1432118

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> formed by Si implantation into p-GaN

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Acoustic study of dislocation rearrangement at later stages of fatigue: Noncontact prediction of remaining life

Hirotsugu Ogi; Yoshikiyo Minami; Masahiko Hirao

J. Appl. Phys. 91, 1849–1854 (2002) https://doi.org/10.1063/1.1433178

Abstract

View articletitled, Acoustic study of dislocation rearrangement at later stages of fatigue: Noncontact prediction of remaining life

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Quantum mechanical behavior of an H atom on Cu(111) and Pt(111)

K. Nobuhara; H. Nakanishi; H. Kasai; A. Okiji

J. Appl. Phys. 91, 1855–1859 (2002) https://doi.org/10.1063/1.1432480

Abstract

View articletitled, Quantum mechanical behavior of an H atom on Cu(111) and Pt(111)

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Simulation of dislocation damping spectra associated with the collective motion of point defects and kink chain subjected to bulk segregation

Tarik O. Ogurtani; Mehmet R. Güngör; Ersin Emre Oren

J. Appl. Phys. 91, 1860–1870 (2002) https://doi.org/10.1063/1.1429769

Abstract

View articletitled, Simulation of dislocation damping spectra associated with the collective motion of point defects and kink chain subjected to bulk segregation

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Evidence of the influence of phonon density on ${Tm}^{3+}$ upconversion luminescence in tellurite and germanate glasses

W. S. Tsang; W. M. Yu; C. L. Mak; W. L. Tsui; K. H. Wong; H. K. Hui

J. Appl. Phys. 91, 1871–1874 (2002) https://doi.org/10.1063/1.1429762

Abstract

View articletitled, Evidence of the influence of phonon density on <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Tm</mi><mrow><mtext>3+</mtext></mrow></msup></math> upconversion luminescence in tellurite and germanate glasses

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Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations

V. Ryzhii; I. Khmyrova; M. Shur

J. Appl. Phys. 91, 1875–1881 (2002) https://doi.org/10.1063/1.1431436

Abstract

View articletitled, Terahertz photomixing in quantum well structures using resonant excitation of plasma oscillations

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Governing parameter for electromigration damage in the polycrystalline line covered with a passivation layer

Kazuhiko Sasagawa; Masataka Hasegawa; Masumi Saka; Hiroyuki Abé

J. Appl. Phys. 91, 1882–1890 (2002) https://doi.org/10.1063/1.1432120

Abstract

View articletitled, Governing parameter for electromigration damage in the polycrystalline line covered with a passivation layer

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Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic ${CH}_{3}^{+}$ ions and ion bombardment

Meiyong Liao; Zhihong Feng; Chunlin Chai; Shaoyan Yang; Zhikai Liu; Zhanguo Wang

J. Appl. Phys. 91, 1891–1893 (2002) https://doi.org/10.1063/1.1428086

Abstract

View articletitled, Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">CH</mi><mrow><mn>3</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> ions and ion bombardment

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Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

Lahir Shaik Adam; Mark E. Law; Omer Dokumaci; Suri Hegde

J. Appl. Phys. 91, 1894–1900 (2002) https://doi.org/10.1063/1.1430537

Abstract

View articletitled, Physical integrated diffusion-oxidation model for implanted nitrogen in silicon

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Mechanism of the structural phase transformations in epitaxial ${YH}_{x}$ switchable mirrors

B. J. Kooi; E. Zoestbergen; J. Th. M. De Hosson; J. W. J. Kerssemakers; B. Dam; R. C. C. Ward

J. Appl. Phys. 91, 1901–1909 (2002) https://doi.org/10.1063/1.1431427

Abstract

View articletitled, Mechanism of the structural phase transformations in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YH</mi><mrow><mi>x</mi></mrow></msub></math> switchable mirrors

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High energy ion beam studies of ion exchange in a ${Na}_{2} O - {Al}_{2} O_{3} - {SiO}_{2}$ glass

V. Shutthanandan; D. R. Baer; S. Thevuthasan; E. M. Adams; S. Maheswaran; M. H. Engelhard; J. P. Icenhower; B. P. McGrail

J. Appl. Phys. 91, 1910–1920 (2002) https://doi.org/10.1063/1.1432119

Abstract

View articletitled, High energy ion beam studies of ion exchange in a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Na</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">O</mi><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">–</mi><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> glass

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Dynamic high-strain-rate mechanical behavior of microstructurally biased two-phase ${TIB}_{2} + {AL}_{2} O_{3}$ ceramics

Greg Kennedy; Louis Ferranti; Rod Russell; Min Zhou; Naresh Thadhani

J. Appl. Phys. 91, 1921–1927 (2002) https://doi.org/10.1063/1.1429770

Abstract

View articletitled, Dynamic high-strain-rate mechanical behavior of microstructurally biased two-phase <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TIB</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">+</mi><msub xmlns=""><mi mathvariant="normal">AL</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> ceramics

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Investigation of cation-exchanged montmorillonites by combined x-ray diffraction and positron annihilation lifetime spectroscopy

G. Consolati; I. Natali-Sora; R. Pelosato; F. Quasso

J. Appl. Phys. 91, 1928–1932 (2002) https://doi.org/10.1063/1.1432472

Abstract

View articletitled, Investigation of cation-exchanged montmorillonites by combined x-ray diffraction and positron annihilation lifetime spectroscopy

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Modeling cross-hatch surface morphology in growing mismatched layers

A. M. Andrews; J. S. Speck; A. E. Romanov; M. Bobeth; W. Pompe

J. Appl. Phys. 91, 1933–1943 (2002) https://doi.org/10.1063/1.1428091

Abstract

View articletitled, Modeling cross-hatch surface morphology in growing mismatched layers

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Poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]/tris (8-hydroxyquinoline) aluminum heterojunction electroluminescent devices produced by cluster beam deposition methods

Jae-Yoo Kim; Eun-Sook Kim; Jong-Ho Choi

J. Appl. Phys. 91, 1944–1951 (2002) https://doi.org/10.1063/1.1429763

Abstract

View articletitled, Poly[2-(N-carbazolyl)-5-(2-ethylhexyloxy)-1,4-phenylenevinylene]/tris (8-hydroxyquinoline) aluminum heterojunction electroluminescent devices produced by cluster beam deposition methods

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Structure, surface composition, and electronic properties of ${CuInS}_{2}$ and ${CuIn}_{(1−x)} {Al}_{x} S_{2}$

N. Kamoun; N. Jebbari; S. Belgacem; R. Bennaceur; J. Bonnet; F. Touhari; L. Lassabatere

J. Appl. Phys. 91, 1952–1956 (2002) https://doi.org/10.1063/1.1421210

Abstract

View articletitled, Structure, surface composition, and electronic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuInS</mi><mrow><mn>2</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CuIn</mi><mrow><mtext>(1−x)</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mn>2</mn></mrow></msub></math>

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High pressure study of graphitization of diamond crystals

C. Pantea; J. Qian; G. A. Voronin; T. W. Zerda

J. Appl. Phys. 91, 1957–1962 (2002) https://doi.org/10.1063/1.1433181

Abstract

View articletitled, High pressure study of graphitization of diamond crystals

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Shadowing effects on the microstructure of obliquely deposited films

Paritosh; D. J. Srolovitz

J. Appl. Phys. 91, 1963–1972 (2002) https://doi.org/10.1063/1.1432125

Abstract

View articletitled, Shadowing effects on the microstructure of obliquely deposited films

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High-temperature healing of interfacial voids in GaAs wafer bonding

YewChung Sermon Wu; Po Chun Liu; R. S. Feigelson; R. K. Route

J. Appl. Phys. 91, 1973–1977 (2002) https://doi.org/10.1063/1.1430888

Abstract

View articletitled, High-temperature healing of interfacial voids in GaAs wafer bonding

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Epitaxial growth of $Cu (In, Ga) {Se}_{2}$ on GaAs(110)

D. Liao; A. Rockett

J. Appl. Phys. 91, 1978–1983 (2002) https://doi.org/10.1063/1.1434549

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu</mi><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">In, Ga</mi><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mn>2</mn></mrow></msub></math> on GaAs(110)

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Ultrahigh vacuum preparation and characterization of ${TiO}_{2} / CdTe$ interfaces: Electrical properties and implications for solar cells

S. Tiefenbacher; C. Pettenkofer; W. Jaegermann

J. Appl. Phys. 91, 1984–1987 (2002) https://doi.org/10.1063/1.1435413

Abstract

View articletitled, Ultrahigh vacuum preparation and characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">CdTe</mi></math> interfaces: Electrical properties and implications for solar cells

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Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

Jeremy Thurn; Robert F. Cook

J. Appl. Phys. 91, 1988–1992 (2002) https://doi.org/10.1063/1.1432773

Abstract

View articletitled, Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

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Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells

H. D. Sun; T. Makino; Y. Segawa; M. Kawasaki; A. Ohtomo; K. Tamura; H. Koinuma

J. Appl. Phys. 91, 1993–1997 (2002) https://doi.org/10.1063/1.1445280

Abstract

View articletitled, Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells

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Positron-annihilation study of compensation defects in InP

Y. Y. Shan; A. H. Deng; C. C. Ling; S. Fung; C. D. Ling; Y. W. Zhao; T. N. Sun; N. F. Sun

J. Appl. Phys. 91, 1998–2001 (2002) https://doi.org/10.1063/1.1428796

Abstract

View articletitled, Positron-annihilation study of compensation defects in InP

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Effects of absorption and desorption on the chemical stress field

Tong-Yi Zhang; Sun-Chien Ko; Sanboh Lee

J. Appl. Phys. 91, 2002–2008 (2002) https://doi.org/10.1063/1.1433177

Abstract

View articletitled, Effects of absorption and desorption on the chemical stress field

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Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

Ikurou Umezu; Ken-ichi Yoshida; Naomichi Sakamoto; Takatoshi Murota; Yoshiaki Takashima; Mitsuru Inada; Akira Sugimura

J. Appl. Phys. 91, 2009–2013 (2002) https://doi.org/10.1063/1.1433923

Abstract

View articletitled, Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

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Probabilistic immortality of Cu damascene interconnects

Stefan P. Hau-Riege

J. Appl. Phys. 91, 2014–2022 (2002) https://doi.org/10.1063/1.1436562

Abstract

View articletitled, Probabilistic immortality of Cu damascene interconnects

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Comparison of low energy ${BF}_{2}^{+},$ ${BCl}_{2}^{+},$ and ${BBr}_{2}^{+}$ implants for the fabrication of ultrashallow $P^{+} -N$ junctions

Swaroop Ganguly; Li Lin; Puneet Kohli; Hong-Jyh Li; Taras Kirichenko; Raghu Srinivasa; Vikas Agarwal; Sanjay Banerjee

J. Appl. Phys. 91, 2023–2027 (2002) https://doi.org/10.1063/1.1433926

Abstract

View articletitled, Comparison of low energy <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BF</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BCl</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup><mi xmlns="">,</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msubsup xmlns=""><mi mathvariant="normal">BBr</mi><mrow><mn>2</mn></mrow><mrow><mi>+</mi></mrow></msubsup></math> implants for the fabrication of ultrashallow <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>P</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">-N</mi></math> junctions

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Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

T. Egilsson; I. G. Ivanov; A. Henry; E. Janzén

J. Appl. Phys. 91, 2028–2032 (2002) https://doi.org/10.1063/1.1431437

Abstract

View articletitled, Excitation spectra of nitrogen bound excitons in 4H- and 6H-SiC

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Thermal conductivity reduction in HgTe/CdTe superlattices

W. E. Bies; H. Ehrenreich; E. Runge

J. Appl. Phys. 91, 2033–2036 (2002) https://doi.org/10.1063/1.1432473

Abstract

View articletitled, Thermal conductivity reduction in HgTe/CdTe superlattices

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Development of texture in TiN films by use of in situ synchrotron x-ray scattering

N. Schell; W. Matz; J. Bøttiger; J. Chevallier; P. Kringhøj

J. Appl. Phys. 91, 2037–2044 (2002) https://doi.org/10.1063/1.1436558

Abstract

View articletitled, Development of texture in TiN films by use of in situ synchrotron x-ray scattering

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Effect of temperature on nonlinear optical properties of composite media with shape distribution

L. Gao; Z. Y. Li

J. Appl. Phys. 91, 2045–2050 (2002) https://doi.org/10.1063/1.1436555

Abstract

View articletitled, Effect of temperature on nonlinear optical properties of composite media with shape distribution

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Improving diamond–metal adhesion with graded TiCN interlayers

Chang Q. Sun; Y. Q. Fu; B. B. Yan; J. H. Hsieh; S. P. Lau; X. W. Sun; B. K. Tay

J. Appl. Phys. 91, 2051–2054 (2002) https://doi.org/10.1063/1.1434546

Abstract

View articletitled, Improving diamond–metal adhesion with graded TiCN interlayers

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The effect of the matrix on film properties in matrix-assisted pulsed laser evaporation

D. M. Bubb; P. K. Wu; J. S. Horwitz; J. H. Callahan; M. Galicia; A. Vertes; R. A. McGill; E. J. Houser; B. R. Ringeisen; D. B. Chrisey

J. Appl. Phys. 91, 2055–2058 (2002) https://doi.org/10.1063/1.1427138

Abstract

View articletitled, The effect of the matrix on film properties in matrix-assisted pulsed laser evaporation

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions

S. Rein; T. Rehrl; W. Warta; S. W. Glunz

J. Appl. Phys. 91, 2059–2070 (2002) https://doi.org/10.1063/1.1428095

Abstract

View articletitled, Lifetime spectroscopy for defect characterization: Systematic analysis of the possibilities and restrictions

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Electrical characterization of stressed and broken down ${SiO}_{2}$ films at a nanometer scale using a conductive atomic force microscope

M. Porti; M. Nafrı́a; X. Aymerich; A. Olbrich; B. Ebersberger

J. Appl. Phys. 91, 2071–2079 (2002) https://doi.org/10.1063/1.1430542

Abstract

View articletitled, Electrical characterization of stressed and broken down <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films at a nanometer scale using a conductive atomic force microscope

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Effects of rapid thermal annealing on the optical properties of ${In}_{0.53} {Ga}_{0.47} {As/In}_{0.52} {Al}_{0.48} As$ multiple quantum wells with InGaAs and dielectric capping layers

Jae Su Yu; Jin Dong Song; Yong Tak Lee; H. Lim

J. Appl. Phys. 91, 2080–2084 (2002) https://doi.org/10.1063/1.1427436

Abstract

View articletitled, Effects of rapid thermal annealing on the optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.47</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.48</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> multiple quantum wells with InGaAs and dielectric capping layers

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Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current

Hideharu Matsuura; Takashi Hase; Yasuhiro Sekimoto; Masaharu Uchikura; Masaru Simizu

J. Appl. Phys. 91, 2085–2092 (2002) https://doi.org/10.1063/1.1429768

Abstract

View articletitled, Graphical peak analysis method for determining densities and emission rates of traps in dielectric film from transient discharge current

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Electron-confined longitudinal optical phonon interaction and strong magnetic field effects on the binding energy in GaAs quantum wells

N. Es-Sbai; A. Sali; M. Fliyou; E. Abarkan

J. Appl. Phys. 91, 2093–2098 (2002) https://doi.org/10.1063/1.1430532

Abstract

View articletitled, Electron-confined longitudinal optical phonon interaction and strong magnetic field effects on the binding energy in GaAs quantum wells

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Optical properties of 4H–SiC

R. Ahuja; A. Ferreira da Silva; C. Persson; J. M. Osorio-Guillén; I. Pepe; K. Järrendahl; O. P. A. Lindquist; N. V. Edwards; Q. Wahab; B. Johansson

J. Appl. Phys. 91, 2099–2103 (2002) https://doi.org/10.1063/1.1429766

Abstract

View articletitled, Optical properties of 4H–SiC

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Theory of magnetic-field enhancement of surface-field terahertz emission

M. B. Johnston; D. M. Whittaker; A. Corchia; A. G. Davies; E. H. Linfield

J. Appl. Phys. 91, 2104–2106 (2002) https://doi.org/10.1063/1.1433187

Abstract

View articletitled, Theory of magnetic-field enhancement of surface-field terahertz emission

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Simulated current response in avalanche photodiodes

P. J. Hambleton; S. A. Plimmer; J. P. R. David; G. J. Rees; G. M. Dunn

J. Appl. Phys. 91, 2107–2111 (2002) https://doi.org/10.1063/1.1432122

Abstract

View articletitled, Simulated current response in avalanche photodiodes

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Carrier doping into ${MgIn}_{2} O_{4}$ epitaxial thin films by proton implantation

M. Miyakawa; R. Noshiro; T. Ogawa; K. Ueda; H. Kawazoe; H. Ohta; M. Orita; M. Hirano; H. Hosono

J. Appl. Phys. 91, 2112–2117 (2002) https://doi.org/10.1063/1.1418425

Abstract

View articletitled, Carrier doping into <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgIn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> epitaxial thin films by proton implantation

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Si δ-doped GaAs structure with different dopant distribution models

E. Ozturk; Y. Ergun; H. Sari; I. Sokmen

J. Appl. Phys. 91, 2118–2122 (2002) https://doi.org/10.1063/1.1424051

Abstract

View articletitled, Si δ-doped GaAs structure with different dopant distribution models

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Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

A. Meinertzhagen; C. Petit; D. Zander; O. Simonetti; T. Maurel; M. Jourdain

J. Appl. Phys. 91, 2123–2132 (2002) https://doi.org/10.1063/1.1430536

Abstract

View articletitled, Low voltage stress induced leakage currents and surface states in ultrathin (1.2–2.5 nm) oxides

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Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

E. A. Preble; K. M. Tracy; S. Kiesel; H. McLean; P. Q. Miraglia; R. J. Nemanich; R. F. Davis; M. Albrecht; David J. Smith

J. Appl. Phys. 91, 2133–2137 (2002) https://doi.org/10.1063/1.1432127

Abstract

View articletitled, Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films

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Effects of P doping on the thermoelectric properties of $β- {FeSi}_{2}$

Mikio Ito; Hiroshi Nagai; Etsushi Oda; Shigeru Katsuyama; Kazuhiko Majima

J. Appl. Phys. 91, 2138–2142 (2002) https://doi.org/10.1063/1.1436302

Abstract

View articletitled, Effects of P doping on the thermoelectric properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mn>2</mn></mrow></msub></math>

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Noise characteristics and modeling of silicon-on-insulator insulated-gate pn-junction devices

Shigeyuki Wakita; Yasuhisa Omura

J. Appl. Phys. 91, 2143–2148 (2002) https://doi.org/10.1063/1.1433930

Abstract

View articletitled, Noise characteristics and modeling of silicon-on-insulator insulated-gate pn-junction devices

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Electrical transport properties in ${LiMn}_{2} O_{4},$ ${Li}_{0.95} {Mn}_{2} O_{4},$ and ${LiMn}_{1.95} B_{0.05} O_{4}$ $(B = Al$ or Ga) around room temperature

E. Iguchi; Y. Tokuda; H. Nakatsugawa; F. Munakata

J. Appl. Phys. 91, 2149–2154 (2002) https://doi.org/10.1063/1.1432123

Abstract

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Origin of substrate hole current after gate oxide breakdown

Mahmoud Rasras; Ingrid De Wolf; Guido Groeseneken; Robin Degraeve; Herman E. Maes

J. Appl. Phys. 91, 2155–2160 (2002) https://doi.org/10.1063/1.1434550

Abstract

View articletitled, Origin of substrate hole current after gate oxide breakdown

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Spin valves with canted pinning field

Z. Q. Lu; G. Pan; Y. K. Zheng

J. Appl. Phys. 91, 2161–2164 (2002) https://doi.org/10.1063/1.1428806

Abstract

View articletitled, Spin valves with canted pinning field

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Structural and magnetic properties of ${R(Fe}_{1−y} {Co}_{y})_{12−x} {Nb}_{x}$ compounds

J. L. Wang; N. Tang; Y. P. Shen; D. Yang; B. Fuquan; G. H. Wu; F. M. Yang; F. R. de Boer; E. Brück; K. H. J. Buschow

J. Appl. Phys. 91, 2165–2171 (2002) https://doi.org/10.1063/1.1425441

Abstract

View articletitled, Structural and magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">R(Fe</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>12−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi>x</mi></mrow></msub></math> compounds

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Thermal stability of spin valve sensors using artificial CoFe/Ir based ferrimagnets

S. Colis; M. Guth; J. Arabski; A. Dinia; D. Muller

J. Appl. Phys. 91, 2172–2175 (2002) https://doi.org/10.1063/1.1432483

Abstract

View articletitled, Thermal stability of spin valve sensors using artificial CoFe/Ir based ferrimagnets

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Use of a permanent magnet in the synthetic antiferromagnet of a spin-valve

Michael A. Seigler; Paul E. Anderson; Alexander M. Shukh

J. Appl. Phys. 91, 2176–2179 (2002) https://doi.org/10.1063/1.1433937

Abstract

View articletitled, Use of a permanent magnet in the synthetic antiferromagnet of a spin-valve

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Ferromagnetic resonance and exchange anisotropy in ferromagnetic/antiferromagnetic bilayers

Jing-guo Hu; Guo-jun Jin; Yu-qiang Ma

J. Appl. Phys. 91, 2180–2185 (2002) https://doi.org/10.1063/1.1433927

Abstract

View articletitled, Ferromagnetic resonance and exchange anisotropy in ferromagnetic/antiferromagnetic bilayers

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Reversal mechanism in permanent magnetic materials

G. P. Zhao; H. S. Lim; Y. P. Feng; C. K. Ong; G. R. Liu

J. Appl. Phys. 91, 2186–2191 (2002) https://doi.org/10.1063/1.1428791

Abstract

View articletitled, Reversal mechanism in permanent magnetic materials

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Microstructure and magnetization reversal in nanocomposite ${SmCo}_{5} / {Sm}_{2} {Co}_{17}$ magnets

A. Yan; A. Bollero; O. Gutfleisch; K.-H. Müller

J. Appl. Phys. 91, 2192–2196 (2002) https://doi.org/10.1063/1.1433940

Abstract

View articletitled, Microstructure and magnetization reversal in nanocomposite <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SmCo</mi><mrow><mn>5</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">Sm</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mn>17</mn></mrow></msub></math> magnets

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Exchange coupling mechanism of polycrystalline Co/CrMnPt films

Susumu Soeya

J. Appl. Phys. 91, 2197–2201 (2002) https://doi.org/10.1063/1.1432771

Abstract

View articletitled, Exchange coupling mechanism of polycrystalline Co/CrMnPt films

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A directional magnetization potential based model of magnetoelastic hysteresis

William D. Armstrong

J. Appl. Phys. 91, 2202–2210 (2002) https://doi.org/10.1063/1.1431433

Abstract

View articletitled, A directional magnetization potential based model of magnetoelastic hysteresis

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Dependence on cation distribution of particle size, lattice parameter, and magnetic properties in nanosize Mn–Zn ferrite

Chandana Rath; S. Anand; R. P. Das; K. K. Sahu; S. D. Kulkarni; S. K. Date; N. C. Mishra

J. Appl. Phys. 91, 2211–2215 (2002) https://doi.org/10.1063/1.1432474

Abstract

View articletitled, Dependence on cation distribution of particle size, lattice parameter, and magnetic properties in nanosize Mn–Zn ferrite

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Current-assisted annealing effect in ${Nd}_{0.5} {(Ca,Sr)}_{0.5} {MnO}_{3}$

C. W. Chang; A. K. Debnath; J. G. Lin

J. Appl. Phys. 91, 2216–2219 (2002) https://doi.org/10.1063/1.1433939

Abstract

View articletitled, Current-assisted annealing effect in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">(Ca,Sr)</mi><mrow><mi mathvariant="normal">0.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Annealing induced structural change in sputter deposited copper ferrite thin films and its impact on magnetic properties

Mrugesh Desai; Shiva Prasad; N. Venkataramani; Indradev Samajdar; A. K. Nigam; R. Krishnan

J. Appl. Phys. 91, 2220–2227 (2002) https://doi.org/10.1063/1.1433176

Abstract

View articletitled, Annealing induced structural change in sputter deposited copper ferrite thin films and its impact on magnetic properties

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Observation of in plane magnetization reversal using polarization dependent magneto-optic Kerr effect

H. Ohldag; N. B. Weber; F. U. Hillebrecht; E. Kisker

J. Appl. Phys. 91, 2228–2231 (2002) https://doi.org/10.1063/1.1427412

Abstract

View articletitled, Observation of in plane magnetization reversal using polarization dependent magneto-optic Kerr effect

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The thickness dependence of the effect of pressures on magnetic and electronic properties of thin films of ${La}_{2/3} {Ca}_{1/3} {MnO}_{3}$

S. Jacob; T. Roch; F. S. Razavi; G. M. Gross; H.-U. Habermeier

J. Appl. Phys. 91, 2232–2235 (2002) https://doi.org/10.1063/1.1432770

Abstract

View articletitled, The thickness dependence of the effect of pressures on magnetic and electronic properties of thin films of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>2/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math>

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Micromagnetic study of subnanosecond magnetic switching in perpendicular multilayers

A. Lyberatos; G. Ju; R. J. M. van de Veerdonk; D. Weller

J. Appl. Phys. 91, 2236–2242 (2002) https://doi.org/10.1063/1.1432481

Abstract

View articletitled, Micromagnetic study of subnanosecond magnetic switching in perpendicular multilayers

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Thermal stability of exchange coupling in permalloy/FeMn bilayers and its dependence on the antiferromagnetic layer thickness

H. Y. Li; L. Y. Chen; S. M. Zhou

J. Appl. Phys. 91, 2243–2246 (2002) https://doi.org/10.1063/1.1426225

Abstract

View articletitled, Thermal stability of exchange coupling in permalloy/FeMn bilayers and its dependence on the antiferromagnetic layer thickness

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects

A. G. Zembilgotov; N. A. Pertsev; H. Kohlstedt; R. Waser

J. Appl. Phys. 91, 2247–2254 (2002) https://doi.org/10.1063/1.1427406

Abstract

View articletitled, Ultrathin epitaxial ferroelectric films grown on compressive substrates: Competition between the surface and strain effects

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Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate

Y. Ding; J. S. Liu; J. S. Zhu; Y. N. Wang

J. Appl. Phys. 91, 2255–2261 (2002) https://doi.org/10.1063/1.1431428

Abstract

View articletitled, Stacking faults and their effects on ferroelectric properties in strontium bismuth tantalate

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Brillouin and dielectric studies of the phase transition in the relaxor ferroelectric $Pb ({Ni}_{1/3} {Nb}_{2/3}) O_{3}$

H. J. Fan; M. H. Kuok; S. C. Ng; N. Yasuda; H. Ohwa; M. Iwata; H. Orihara; Y. Ishibashi

J. Appl. Phys. 91, 2262–2266 (2002) https://doi.org/10.1063/1.1433183

Abstract

View articletitled, Brillouin and dielectric studies of the phase transition in the relaxor ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mtext>1/3</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>2/3</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>

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Low-frequency and microwave performances of laser-ablated epitaxial ${Na}_{0.5} K_{0.5} {NbO}_{3}$ films on high-resistivity ${SiO}_{2} /Si$ substrates

S. Abadei; S. Gevorgian; C.-R. Cho; A. Grishin

J. Appl. Phys. 91, 2267–2276 (2002) https://doi.org/10.1063/1.1430545

Abstract

View articletitled, Low-frequency and microwave performances of laser-ablated epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Na</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">K</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">NbO</mi><mrow><mn>3</mn></mrow></msub></math> films on high-resistivity <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math> substrates

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On the thickness expansion of the electric potential in the determination of two-dimensional equations for the vibration of electroded piezoelectric plates

H. F. Tiersten

J. Appl. Phys. 91, 2277–2283 (2002) https://doi.org/10.1063/1.1426242

Abstract

View articletitled, On the thickness expansion of the electric potential in the determination of two-dimensional equations for the vibration of electroded piezoelectric plates

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Dielectric and optical properties of ${BaTiO}_{3} / {SrTiO}_{3}$ and ${BaTiO}_{3} / {BaZrO}_{3}$ superlattices

Takaaki Tsurumi; Tomoyoshi Ichikawa; Terukiyo Harigai; Hirofumi Kakemoto; Satoshi Wada

J. Appl. Phys. 91, 2284–2289 (2002) https://doi.org/10.1063/1.1433180

Abstract

View articletitled, Dielectric and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">BaZrO</mi><mrow><mn>3</mn></mrow></msub></math> superlattices

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Enhancement of remanent polarization in epitaxial ${BaTiO}_{3} / {SrTiO}_{3}$ superlattices with “asymmetric” structure

Toru Shimuta; Osamu Nakagawara; Takahiro Makino; Seiichi Arai; Hitoshi Tabata; Tomoji Kawai

J. Appl. Phys. 91, 2290–2294 (2002) https://doi.org/10.1063/1.1434547

Abstract

View articletitled, Enhancement of remanent polarization in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">/</mi><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> superlattices with “asymmetric” structure

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Effect of thermal expansion mismatch on the dielectric peak temperature of thin film relaxors

G. Catalan; M. H. Corbett; R. M. Bowman; J. M. Gregg

J. Appl. Phys. 91, 2295–2301 (2002) https://doi.org/10.1063/1.1429761

Abstract

View articletitled, Effect of thermal expansion mismatch on the dielectric peak temperature of thin film relaxors

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NANOSCALE SCIENCE AND DESIGN

Theory of local optical spectroscopy of quantum wires with interface fluctuations

Omar Di Stefano; Salvatore Savasta; Raffaello Girlanda

J. Appl. Phys. 91, 2302–2307 (2002) https://doi.org/10.1063/1.1424049

Abstract

View articletitled, Theory of local optical spectroscopy of quantum wires with interface fluctuations

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Optical properties of undoped and Gd-doped ${CeO}_{2}$ nanocrystalline thin films

Toshio Suzuki; Igor Kosacki; Vladimir Petrovsky; Harlan U. Anderson

J. Appl. Phys. 91, 2308–2314 (2002) https://doi.org/10.1063/1.1430890

Abstract

View articletitled, Optical properties of undoped and Gd-doped <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CeO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> nanocrystalline thin films

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Band-gap tuning of PbS nanoparticles by in-flight sintering of size classified aerosols

K. K. Nanda; F. E. Kruis; H. Fissan; M. Acet

J. Appl. Phys. 91, 2315–2321 (2002) https://doi.org/10.1063/1.1431429

Abstract

View articletitled, Band-gap tuning of PbS nanoparticles by in-flight sintering of size classified aerosols

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Structural and optical properties of silicon–germanium alloy nanoparticles

Chung-Wei Lin; Shih-Yen Lin; Si-Chen Lee; Chih-Ta Chia

J. Appl. Phys. 91, 2322–2325 (2002) https://doi.org/10.1063/1.1433185

Abstract

View articletitled, Structural and optical properties of silicon–germanium alloy nanoparticles

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Off-center donor impurity in multilayered quantum wires

Cheng-Ying Hsieh

J. Appl. Phys. 91, 2326–2332 (2002) https://doi.org/10.1063/1.1433186

Abstract

View articletitled, Off-center donor impurity in multilayered quantum wires

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Characterization of nanometer As-clusters in low-temperature grown GaAs by transient reflectivity measurements

T. Korn; A. Franke-Wiekhorst; S. Schnüll; I. Wilke

J. Appl. Phys. 91, 2333–2336 (2002) https://doi.org/10.1063/1.1430886

Abstract

View articletitled, Characterization of nanometer As-clusters in low-temperature grown GaAs by transient reflectivity measurements

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Crystallographic and magnetic properties of nanocrystalline ${Fe}_{78} {Al}_{4} {Nb}_{5} B_{12} {Cu}_{1}$ alloys

Sung Hyun Yoon; Sung Baek Kim; Hi Min Lee; Chul Sung Kim

J. Appl. Phys. 91, 2337–2342 (2002) https://doi.org/10.1063/1.1433932

Abstract

View articletitled, Crystallographic and magnetic properties of nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>78</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mn>5</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>12</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mn>1</mn></mrow></msub></math> alloys

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DEVICE PHYSICS (PACS 85)

Two-dimensional quantum mechanical modeling of nanotransistors

A. Svizhenko; M. P. Anantram; T. R. Govindan; B. Biegel; R. Venugopal

J. Appl. Phys. 91, 2343–2354 (2002) https://doi.org/10.1063/1.1432117

Abstract

View articletitled, Two-dimensional quantum mechanical modeling of nanotransistors

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A method of noncontact suspension of rotating bodies using electromagnetic forces

Alexei V. Filatov; Eric H. Maslen; George T. Gillies

J. Appl. Phys. 91, 2355–2371 (2002) https://doi.org/10.1063/1.1430894

Abstract

View articletitled, A method of noncontact suspension of rotating bodies using electromagnetic forces

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Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC

E. Danielsson; C.-M. Zetterling; M. Östling; D. Tsvetkov; V. A. Dmitriev

J. Appl. Phys. 91, 2372–2379 (2002) https://doi.org/10.1063/1.1430892

Abstract

View articletitled, Characterization of heterojunction diodes with hydride vapor phase epitaxy grown AlGaN on 4H–SiC

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Numerical simulations of stress induced void evolution and growth in interconnects

Daniel Fridline; Allan Bower

J. Appl. Phys. 91, 2380–2390 (2002) https://doi.org/10.1063/1.1428097

Abstract

View articletitled, Numerical simulations of stress induced void evolution and growth in interconnects

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Thermal annealing study of 1 MeV electron-irradiation-induced defects in $n^{+} p$ InGaP diodes and solar cells

Aurangzeb Khan; Masafumi Yamaguchi; Jacques C. Bourgoin; Tatsuya Takamoto

J. Appl. Phys. 91, 2391–2397 (2002) https://doi.org/10.1063/1.1433936

Abstract

View articletitled, Thermal annealing study of 1 MeV electron-irradiation-induced defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup><mi xmlns="">p</mi></math> InGaP diodes and solar cells

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High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch

R. Lewén; I. Maximov; I. Shorubalko; L. Samuelson; L. Thylén; H. Q. Xu

J. Appl. Phys. 91, 2398–2402 (2002) https://doi.org/10.1063/1.1429801

Abstract

View articletitled, High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch

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Improvement of the discharge efficiency in plasma displays

G. Oversluizen; M. Klein; S. de Zwart; S. van Heusden; T. Dekker

J. Appl. Phys. 91, 2403–2408 (2002) https://doi.org/10.1063/1.1430896

Abstract

View articletitled, Improvement of the discharge efficiency in plasma displays

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Using computer modeling analysis in single junction a-SiGe:H $p–i–n$ solar cells

F. A. Rubinelli; R. Jiménez; J. K. Rath; R. E. I. Schropp

J. Appl. Phys. 91, 2409–2416 (2002) https://doi.org/10.1063/1.1435416

Abstract

View articletitled, Using computer modeling analysis in single junction a-SiGe:H <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–i–n</mi></math> solar cells

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Fast pulsed electroluminescence from polymer light-emitting diodes

J. Wang; R. G. Sun; G. Yu; A. J. Heeger

J. Appl. Phys. 91, 2417–2422 (2002) https://doi.org/10.1063/1.1434545

Abstract

View articletitled, Fast pulsed electroluminescence from polymer light-emitting diodes

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Polymorphous hydrogenated silicon Schottky diodes: Properties under illumination

Monique Gauthier

J. Appl. Phys. 91, 2423–2428 (2002) https://doi.org/10.1063/1.1433934

Abstract

View articletitled, Polymorphous hydrogenated silicon Schottky diodes: Properties under illumination

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Rapid thermal annealing effects on step-graded InAlAs buffer layer and ${In}_{0.52} {Al}_{0.48} {As/In}_{0.53} {Ga}_{0.47} As$ metamorphic high electron mobility transistor structures on GaAs substrates

L. J. Cui; Y. P. Zeng; B. Q. Wang; J. Wu; Z. P. Zhu; L. Y. Lin

J. Appl. Phys. 91, 2429–2432 (2002) https://doi.org/10.1063/1.1433174

Abstract

View articletitled, Rapid thermal annealing effects on step-graded InAlAs buffer layer and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mtext>0.48</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">As/In</mi><mrow><mtext>0.53</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.47</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> metamorphic high electron mobility transistor structures on GaAs substrates

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Memory device applications of a conjugated polymer: Role of space charges

Himadri S. Majumdar; Anirban Bandyopadhyay; Alberto Bolognesi; Amlan J. Pal

J. Appl. Phys. 91, 2433–2437 (2002) https://doi.org/10.1063/1.1445281

Abstract

View articletitled, Memory device applications of a conjugated polymer: Role of space charges

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

${}^{4}{He+Ni}$ elastic scattering near the Coulomb barrier and optical model parameters

A. Nurmela; P. Pusa; E. Rauhala; J. Räisänen

J. Appl. Phys. 91, 2438–2442 (2002) https://doi.org/10.1063/1.1427434

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mmultiscripts xmlns=""><mi mathvariant="normal">He+Ni</mi><mprescripts></mprescripts><mtext></mtext><mn>4</mn></mmultiscripts></math> elastic scattering near the Coulomb barrier and optical model parameters

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Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films

W. K. Choi; A. Natarajan; L. K. Bera; A. T. S. Wee; Y. J. Liu

J. Appl. Phys. 91, 2443–2448 (2002) https://doi.org/10.1063/1.1431435

Abstract

View articletitled, Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium films

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Production of carbon clusters by laser ablation of polymers in vacuum

K. Shibagaki; N. Takada; K. Sasaki; K. Kadota

J. Appl. Phys. 91, 2449–2454 (2002) https://doi.org/10.1063/1.1434548

Abstract

View articletitled, Production of carbon clusters by laser ablation of polymers in vacuum

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Revealing the powdering methods of black makeup in Ancient Egypt by fitting microstructure based Fourier coefficients to the whole x-ray diffraction profiles of galena

T. Ungár; P. Martinetto; G. Ribárik; E. Dooryhée; Ph. Walter; M. Anne

J. Appl. Phys. 91, 2455–2465 (2002) https://doi.org/10.1063/1.1429792

Abstract

View articletitled, Revealing the powdering methods of black makeup in Ancient Egypt by fitting microstructure based Fourier coefficients to the whole x-ray diffraction profiles of galena

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Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

N. G. Ferreira; E. Abramof; N. F. Leite; E. J. Corat; V. J. Trava-Airoldi

J. Appl. Phys. 91, 2466–2472 (2002) https://doi.org/10.1063/1.1431431

Abstract

View articletitled, Analysis of residual stress in diamond films by x-ray diffraction and micro-Raman spectroscopy

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General parameterization of Auger recombination in crystalline silicon

Mark J. Kerr; Andres Cuevas

J. Appl. Phys. 91, 2473–2480 (2002) https://doi.org/10.1063/1.1432476

Abstract

View articletitled, General parameterization of Auger recombination in crystalline silicon

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Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ion-beam-damaged diamond films

A. Laikhtman; A. Hoffman

J. Appl. Phys. 91, 2481–2486 (2002) https://doi.org/10.1063/1.1432479

Abstract

View articletitled, Enhancement of secondary electron emission by annealing and microwave hydrogen plasma treatment of ion-beam-damaged diamond films

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Theory of the lifetime of the MgO protecting layer in ac plasma display panels

Sean J. Yoon; Insook Lee

J. Appl. Phys. 91, 2487–2492 (2002) https://doi.org/10.1063/1.1433928

Abstract

View articletitled, Theory of the lifetime of the MgO protecting layer in ac plasma display panels

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Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

O. De Gryse; P. Clauws; J. Van Landuyt; O. Lebedev; C. Claeys; E. Simoen; J. Vanhellemont

J. Appl. Phys. 91, 2493–2498 (2002) https://doi.org/10.1063/1.1429800

Abstract

View articletitled, Oxide phase determination in silicon using infrared spectroscopy and transmission electron microscopy techniques

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Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

Gon Namkoong; W. Alan Doolittle; April S. Brown; Maria Losurdo; Pio Capezzuto; Giovanni Bruno

J. Appl. Phys. 91, 2499–2507 (2002) https://doi.org/10.1063/1.1435834

Abstract

View articletitled, Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part I. Impact of the nitridation chemistry on material characteristics

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Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers

Maria Losurdo; Pio Capezzuto; Giovanni Bruno; Gon Namkoong; W. Alan Doolittle; April S. Brown

J. Appl. Phys. 91, 2508–2518 (2002) https://doi.org/10.1063/1.1435835

Abstract

View articletitled, Role of sapphire nitridation temperature on GaN growth by plasma assisted molecular beam epitaxy: Part II. Interplay between chemistry and structure of layers

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Rapid, reversible, sensitive porous silicon gas sensor

Lenward Seals; James L. Gole; Laam Angela Tse; Peter J. Hesketh

J. Appl. Phys. 91, 2519–2523 (2002) https://doi.org/10.1063/1.1436556

Abstract

View articletitled, Rapid, reversible, sensitive porous silicon gas sensor

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Multiqubit computing and error-avoiding codes in subspace using quantum dots

Bi Qiao; H. E. Ruda; Jian Wang

J. Appl. Phys. 91, 2524–2529 (2002) https://doi.org/10.1063/1.1436289

Abstract

View articletitled, Multiqubit computing and error-avoiding codes in subspace using quantum dots

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Breakdown threshold and localized electron density in water induced by ultrashort laser pulses

C. H. Fan; J. Sun; J. P. Longtin

J. Appl. Phys. 91, 2530–2536 (2002) https://doi.org/10.1063/1.1433929

Abstract

View articletitled, Breakdown threshold and localized electron density in water induced by ultrashort laser pulses

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Stability of an oscillating tip in noncontact atomic force microscopy: Theoretical and numerical investigations

G. Couturier; L. Nony; R. Boisgard; J.-P. Aimé

J. Appl. Phys. 91, 2537–2543 (2002) https://doi.org/10.1063/1.1428084

Abstract

View articletitled, Stability of an oscillating tip in noncontact atomic force microscopy: Theoretical and numerical investigations

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COMMUNICATIONS

Two-dimensional lateral superlattices of nanostructures: Nonlithographic formation by anodic membrane template

Jianyu Liang; Hope Chik; Aijun Yin; Jimmy Xu

J. Appl. Phys. 91, 2544–2546 (2002) https://doi.org/10.1063/1.1433173

Abstract

View articletitled, Two-dimensional lateral superlattices of nanostructures: Nonlithographic formation by anodic membrane template

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Measurement of the sheet resistance of resistive films on thin substrates from 120 to 175 GHz using dielectric waveguides

R. J. Collier; D. G. Hasko

J. Appl. Phys. 91, 2547–2549 (2002) https://doi.org/10.1063/1.1430534

Abstract

View articletitled, Measurement of the sheet resistance of resistive films on thin substrates from 120 to 175 GHz using dielectric waveguides

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Largely tunable midinfrared (8–12 μm) difference frequency generation in isotropic semiconductors

R. Haı̈dar; A. Mustelier; Ph. Kupecek; E. Rosencher; R. Triboulet; Ph. Lemasson; G. Mennerat

J. Appl. Phys. 91, 2550–2552 (2002) https://doi.org/10.1063/1.1435412

Abstract

View articletitled, Largely tunable midinfrared (8–12 μm) difference frequency generation in isotropic semiconductors

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Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

Jun Shao; Achim Dörnen; Rolf Winterhoff; Ferdinand Scholz

J. Appl. Phys. 91, 2553–2555 (2002) https://doi.org/10.1063/1.1436553

Abstract

View articletitled, Effective mass and exciton binding energy in ordered (Al)GaInP quantum wells evaluated by derivative of reflectivity

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ERRATA

Erratum: “Numerical study of the effective surface area of obliquely deposited thin films” [J. Appl. Phys. 90, 5599 (2001)]

Motofumi Suzuki; Yasunori Taga

J. Appl. Phys. 91, 2556 (2002) https://doi.org/10.1063/1.1436098

Abstract

View articletitled, Erratum: “Numerical study of the effective surface area of obliquely deposited thin films” [J. Appl. Phys. 90, 5599 (2001)]

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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