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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Filled liquid crystal depolarizers

Nicholas J. Diorio, Jr.; Michael R. Fisch; John L. West

J. Appl. Phys. 90, 3675–3678 (2001) https://doi.org/10.1063/1.1401799

Abstract

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Generalized model for all-optical light modulation in bacteriorhodopsin

Sukhdev Roy; C. P. Singh; K. P. J. Reddy

J. Appl. Phys. 90, 3679–3688 (2001) https://doi.org/10.1063/1.1403679

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Electron diode with a large area ferroelectric plasma cathode

A. Dunaevsky; Ya. E. Krasik; J. Felsteiner; A. Sternlieb

J. Appl. Phys. 90, 3689–3698 (2001) https://doi.org/10.1063/1.1402149

Abstract

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Noncollisional heating and electron energy distributions in magnetically enhanced inductively coupled and helicon plasma sources

Ronald L. Kinder; Mark J. Kushner

J. Appl. Phys. 90, 3699–3712 (2001) https://doi.org/10.1063/1.1400091

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Plasma potential in the presence of an external electric field

Hitoshi Kurosawa; Shuichi Hasegawa; Atsuyuki Suzuki

J. Appl. Phys. 90, 3713–3719 (2001) https://doi.org/10.1063/1.1394901

Abstract

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Thomson scattering in a low-pressure neon mercury positive column

L. P. Bakker; G. M. W. Kroesen

J. Appl. Phys. 90, 3720–3725 (2001) https://doi.org/10.1063/1.1390497

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Absorption of extreme ultraviolet light in a laser produced gas-jet plasma source

Michael Kanouff; Harry Shields; Luis Bernardez; Donald Chenoweth; Glenn Kubiak

J. Appl. Phys. 90, 3726–3734 (2001) https://doi.org/10.1063/1.1403681

Abstract

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Experimental study and simulations of electronegative discharges at low pressure

C. Riccardi; R. Barni; M. Fontanesi

J. Appl. Phys. 90, 3735–3742 (2001) https://doi.org/10.1063/1.1392967

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Metallic contamination in hydrogen plasma immersion ion implantation of silicon

Paul K. Chu; Ricky K. Y. Fu; Xuchu Zeng; Dixon T. K. Kwok

J. Appl. Phys. 90, 3743–3749 (2001) https://doi.org/10.1063/1.1404422

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Co-implantation of $Be+O$ and $Mg+O$ into GaN

D. G. Kent; M. E. Overberg; S. J. Pearton

J. Appl. Phys. 90, 3750–3753 (2001) https://doi.org/10.1063/1.1402668

Abstract

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Equilibrium thermodynamic theory for the evaluation of temperature distributions in overdriven steady-plane wave fronts

Tomokazu Sano; Yukio Sano

J. Appl. Phys. 90, 3754–3761 (2001) https://doi.org/10.1063/1.1397278

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Green function method for nonlinear elastic waves in layered media

A. E. Lobo; E. N. Tsoy; C. Martijn de Sterke

J. Appl. Phys. 90, 3762–3770 (2001) https://doi.org/10.1063/1.1392960

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Mechanical properties of diamond films: A comparative study of polycrystalline and smooth fine-grained diamonds by Brillouin light scattering

P. Djemia; C. Dugautier; T. Chauveau; E. Dogheche; M. I. De Barros; L. Vandenbulcke

J. Appl. Phys. 90, 3771–3779 (2001) https://doi.org/10.1063/1.1402667

Abstract

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Evolution of hydrogen and helium co-implanted single-crystal silicon during annealing

Xinzhong Duo; Weili Liu; Miao Zhang; Lianwei Wang; Chenglu Lin; M. Okuyama; M. Noda; Wing-Yiu Cheung; S. P. Wong; Paul K. Chu; Peigang Hu; S. X. Wang; L. M. Wang

J. Appl. Phys. 90, 3780–3786 (2001) https://doi.org/10.1063/1.1389478

Abstract

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Photoemission study of the effect of thermal annealing on ${Cs}_{2} O/Si(111)$ surfaces

J. X. Wu; F. Q. Li; J. S. Zhu; M. R. Ji; M. S. Ma

J. Appl. Phys. 90, 3787–3791 (2001) https://doi.org/10.1063/1.1405133

Abstract

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Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

V. Grillo; M. Albrecht; T. Remmele; H. P. Strunk; A. Yu. Egorov; H. Riechert

J. Appl. Phys. 90, 3792–3798 (2001) https://doi.org/10.1063/1.1402139

Abstract

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Bulk diffusion measurements to study the effectiveness of barrier layers: I. Mathematical treatment

Lei Tian; Michael O. Thompson; Rüdiger Dieckmann; Chung-Yuen Hui; Yu-Yun Lin

J. Appl. Phys. 90, 3799–3809 (2001) https://doi.org/10.1063/1.1402150

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Bulk diffusion measurements to study the effectiveness of barrier layers: II. Exchange of sodium between liquid crystal display glass substrates with different barrier layers

Lei Tian; Rüdiger Dieckmann

J. Appl. Phys. 90, 3810–3815 (2001) https://doi.org/10.1063/1.1402151

Abstract

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Crystallization kinetics of sputter-deposited amorphous AgInSbTe films

Walter K. Njoroge; Matthias Wuttig

J. Appl. Phys. 90, 3816–3821 (2001) https://doi.org/10.1063/1.1405141

Abstract

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Study of copper silicide retardation effects on copper diffusion in silicon

C. S. Lee; H. Gong; R. Liu; A. T. S. Wee; C. L. Cha; A. See; L. Chan

J. Appl. Phys. 90, 3822–3824 (2001) https://doi.org/10.1063/1.1343518

Abstract

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Optical properties of Ag and Au nanowire gratings

G. Schider; J. R. Krenn; W. Gotschy; B. Lamprecht; H. Ditlbacher; A. Leitner; F. R. Aussenegg

J. Appl. Phys. 90, 3825–3830 (2001) https://doi.org/10.1063/1.1404425

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Characterization of holographic polymer dispersed liquid crystal transmission gratings

Mojca Jazbinšek; Irena Drevenšek Olenik; Marko Zgonik; Adam K. Fontecchio; Gregory P. Crawford

J. Appl. Phys. 90, 3831–3837 (2001) https://doi.org/10.1063/1.1405821

Abstract

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Generalized anisotropic ellipsometry applied to an organic single crystal: Potassium acid phthalate

A. Sassella; A. Borghesi; Th. Wagner; J. Hilfiker

J. Appl. Phys. 90, 3838–3842 (2001) https://doi.org/10.1063/1.1402967

Abstract

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Modification of Co/Pt multilayers by gallium irradiation—Part 1: The effect on structural and magnetic properties

R. Hyndman; P. Warin; J. Gierak; J. Ferré; J. N. Chapman; J. P. Jamet; V. Mathet; C. Chappert

J. Appl. Phys. 90, 3843–3849 (2001) https://doi.org/10.1063/1.1401803

Abstract

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Modification of Co/Pt multilayers by gallium irradiation—Part 2: The effect of patterning using a highly focused ion beam

P. Warin; R. Hyndman; J. Glerak; J. N. Chapman; J. Ferré; J. P. Jamet; V. Mathet; C. Chappert

J. Appl. Phys. 90, 3850–3855 (2001) https://doi.org/10.1063/1.1401794

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Wafer bonding of different III–V compound semiconductors by atomic hydrogen surface cleaning

T. Akatsu; A. Plössl; R. Scholz; H. Stenzel; U. Gösele

J. Appl. Phys. 90, 3856–3862 (2001) https://doi.org/10.1063/1.1403684

Abstract

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Enhanced ultraviolet photoconductivity in semiconducting ${ZnGa}_{2} O_{4}$ thin films

Yong Eui Lee; David P. Norton; John D. Budai; Yayi Wei

J. Appl. Phys. 90, 3863–3866 (2001) https://doi.org/10.1063/1.1396829

Abstract

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Damage buildup in Si under bombardment with MeV heavy atomic and molecular ions

A. I. Titov; S. O. Kucheyev; V. S. Belyakov; A. Yu. Azarov

J. Appl. Phys. 90, 3867–3872 (2001) https://doi.org/10.1063/1.1404426

Abstract

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Electrical activation of ultralow energy As implants in Si

S. Whelan; V. Privitera; G. Mannino; M. Italia; C. Bongiorno; A. La Magna; E. Napolitani

J. Appl. Phys. 90, 3873–3878 (2001) https://doi.org/10.1063/1.1403672

Abstract

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Chemical vapor deposition of Si on chlorosilane-treated ${SiO}_{2}$ surfaces. I. Suppression and enhancement of Si nucleation

T. Yasuda; M. Nishizawa; S. Yamasaki

J. Appl. Phys. 90, 3879–3886 (2001) https://doi.org/10.1063/1.1402977

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Chemical vapor deposition of Si on chlorosilane-treated ${SiO}_{2}$ surfaces. II. Selective deposition in the regions defined by electron-beam irradiation

T. Yasuda; M. Nishizawa; S. Yamasaki

J. Appl. Phys. 90, 3887–3893 (2001) https://doi.org/10.1063/1.1402978

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Origin of point defects in ${AgInS}_{2} / GaAs$ epilayer obtained from photoluminescence measurement

S. H. You; K. J. Hong; C. J. Youn; T. S. Jeong; J. D. Moon; H. S. Kim; J. S. Park

J. Appl. Phys. 90, 3894–3898 (2001) https://doi.org/10.1063/1.1405132

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Initial formation and growth of an amorphous phase in Al–Pt thin films and multilayers: Role of diffusion

P. Gas; J. Labar; G. Clugnet; A. Kovacs; C. Bergman; P. Barna

J. Appl. Phys. 90, 3899–3904 (2001) https://doi.org/10.1063/1.1403682

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Strong localization of Bloch photons in dual-periodic dielectric multilayer structures

Ryoko Shimada; Takao Koda; Tsuyoshi Ueta; Kazuo Ohtaka

J. Appl. Phys. 90, 3905–3909 (2001) https://doi.org/10.1063/1.1405832

Abstract

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Quantitative C lattice site distributions in epitaxial ${Ge}_{1−y} C_{y} / Ge(001)$ layers

J. D’Arcy-Gall; D. Gall; I. Petrov; P. Desjardins; J. E. Greene

J. Appl. Phys. 90, 3910–3918 (2001) https://doi.org/10.1063/1.1402137

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Laser melting of photoluminescent $(Y_{0.92} {Eu}_{0.08})_{2} O_{3}$ films

G. A. Hirata; J. McKittrick; M. Trkula; J. Mourant; R. Sze

J. Appl. Phys. 90, 3919–3924 (2001) https://doi.org/10.1063/1.1404428

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Switchable yttrium–hydride mirrors grown on ${CaF}_{2} (111):$ A x-ray photoelectron spectroscopy and diffraction study

J. Hayoz; J. Schoenes; L. Schlapbach; P. Aebi

J. Appl. Phys. 90, 3925–3933 (2001) https://doi.org/10.1063/1.1405835

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Amplification of transverse acoustic phonons in quantum well heterostructures with piezoelectric interaction

S. M. Komirenko; K. W. Kim; A. A. Demidenko; V. A. Kochelap; M. A. Stroscio

J. Appl. Phys. 90, 3934–3941 (2001) https://doi.org/10.1063/1.1402145

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Enhancement of electrical conductivity in $α- {Al}_{2} O_{3}$ crystals doped with magnesium

M. M. Tardı́o; R. Ramı́rez; R. González; Y. Chen; M. R. Kokta

J. Appl. Phys. 90, 3942–3951 (2001) https://doi.org/10.1063/1.1402669

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Energetics and effects of planar defects in CdTe

Yanfa Yan; M. M. Al-Jassim; Thomas Demuth

J. Appl. Phys. 90, 3952–3955 (2001) https://doi.org/10.1063/1.1405138

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Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN

R. Pässler

J. Appl. Phys. 90, 3956–3964 (2001) https://doi.org/10.1063/1.1402147

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Spectroscopic properties of ${CaF}_{2} {:U}^{4+}$ as a saturable absorber

John B. Gruber; Dhiraj K. Sardar; Larry D. Merkle; Bahram Zandi; Richard Jarman; J. Andrew Hutchinson

J. Appl. Phys. 90, 3965–3972 (2001) https://doi.org/10.1063/1.1396833

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Relaxation dynamics of hot carriers and phonons in semiconductors: Influence of the excitation conditions

A. A. P. Silva; A. C. S. Algarte; A. R. Vasconcellos; R. Luzzi

J. Appl. Phys. 90, 3973–3978 (2001) https://doi.org/10.1063/1.1402138

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N-type negative differential conductance in quasiballistic single-barrier heterostructures

V. Ya. Aleshkin; L. Reggiani; A. Reklaitis

J. Appl. Phys. 90, 3979–3983 (2001) https://doi.org/10.1063/1.1404420

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Xerographic and electroabsorption study of primary photocarrier generation process in x-form metal-free phthalocyanine

Minoru Umeda; Mohamed Mohamedi; Takashi Itoh; Isamu Uchida

J. Appl. Phys. 90, 3984–3987 (2001) https://doi.org/10.1063/1.1403674

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Interface photoluminescence in type II broken-gap ${P–Ga}_{0.84} {In}_{0.16} {As}_{0.22} {Sb}_{0.78} / p- InAs$ single heterostructures

K. D. Moiseev; A. Krier; Yu. P. Yakovlev

J. Appl. Phys. 90, 3988–3992 (2001) https://doi.org/10.1063/1.1402968

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Effect of impurity band conduction on the electrical characteristics of n-type ${CuInSe}_{2}$

L. Essaleh; S. M. Wasim; J. Galibert

J. Appl. Phys. 90, 3993–3997 (2001) https://doi.org/10.1063/1.1403666

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Contribution of injection in current noise due to generation and recombination of carriers in $p–n$ junctions

J. A. Jiménez Tejada; A. Godoy; A. Palma; P. Cartujo

J. Appl. Phys. 90, 3998–4006 (2001) https://doi.org/10.1063/1.1403676

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Tuning the hopping conductivity of ${WO}_{3}$ films by ion bombardment at different temperatures

B. Heinz; M. Merz; P. Widmayer; P. Ziemann

J. Appl. Phys. 90, 4007–4018 (2001) https://doi.org/10.1063/1.1380215

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Current crowding and $1/f$ noise in polycrystalline silicon thin film transistors

A. Mercha; L. K. J. Vandamme; L. Pichon; R. Carin; O. Bonnaud

J. Appl. Phys. 90, 4019–4026 (2001) https://doi.org/10.1063/1.1404418

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Existence and atomic arrangement of the CuPt-type ordered structure near the ZnTe/GaAs heterointerface due to residual impurities

H. S. Lee; J. Y. Lee; T. W. Kim; D. U. Lee; D. C. Choo; H. L. Park

J. Appl. Phys. 90, 4027–4031 (2001) https://doi.org/10.1063/1.1405820

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Electronic states in modulation doped p-AlGaN/GaN superlattices

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Osinsky; P. E. Norris; S. J. Pearton; J. Van Hove; A. M. Wowchack; P. P. Chow

J. Appl. Phys. 90, 4032–4038 (2001) https://doi.org/10.1063/1.1405819

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Magnetic properties and x-ray photoelectron spectroscopy study of NiO/NiFe films prepared by magnetron sputtering

G. H. Yu; L. R. Zeng; F. W. Zhu; C. L. Chai; W. Y. Lai

J. Appl. Phys. 90, 4039–4043 (2001) https://doi.org/10.1063/1.1401804

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Tunnel magnetoresistance and magnetic ordering in ion-beam sputtered ${Co}_{80} {Fe}_{20} / {Al}_{2} O_{3}$ discontinuous multilayers

G. N. Kakazei; Yu. G. Pogorelov; A. M. L. Lopes; J. B. Sousa; S. Cardoso; P. P. Freitas; M. M. Pereira de Azevedo; E. Snoeck

J. Appl. Phys. 90, 4044–4048 (2001) https://doi.org/10.1063/1.1399029

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Mechanisms of noise increase in direct-coupled high $T_{c}$ superconducting quantum interference device magnetometers exposed to magnetic fields

Koichi Yokosawa; Shinya Kuriki; Satoru Hirano; Hiroshi Oyama; Daisuke Suzuki; Keiji Tsukada

J. Appl. Phys. 90, 4049–4055 (2001) https://doi.org/10.1063/1.1403680

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Role of crystallographic structure on magnetization reversal of (101̄0) and (112̄0) textured thin film media

L. Holloway; H. Laidler; N. D. Telling; S. Z. Wu

J. Appl. Phys. 90, 4056–4062 (2001) https://doi.org/10.1063/1.1400101

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Current injection into high temperature superconductors: Does spin matter?

Y. Gim; A. W. Kleinsasser; J. B. Barner

J. Appl. Phys. 90, 4063–4077 (2001) https://doi.org/10.1063/1.1404427

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Strong unidirectional anisotropy in mechanically alloyed spinel ferrites

Y. Shi; J. Ding

J. Appl. Phys. 90, 4078–4084 (2001) https://doi.org/10.1063/1.1405834

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Enhancement of magnetic surface anisotropy of Pd/Co/Pd trilayers by the addition of Sm

Satoshi Okamoto; Katsuya Nishiyama; Osamu Kitakami; Yutaka Shimada

J. Appl. Phys. 90, 4085–4088 (2001) https://doi.org/10.1063/1.1405817

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Structure dependence of ferroelectric properties of bismuth layer-structured ferroelectric single crystals

Hiroshi Irie; Masaru Miyayama; Tetsuichi Kudo

J. Appl. Phys. 90, 4089–4094 (2001) https://doi.org/10.1063/1.1389476

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Domain formation in epitaxial $Pb (Zr, Ti) O_{3}$ thin films

K. S. Lee; J. H. Choi; J. Y. Lee; S. Baik

J. Appl. Phys. 90, 4095–4102 (2001) https://doi.org/10.1063/1.1404424

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${Gd}_{2} O_{3},$ ${Ga}_{2} O_{3} {(Gd}_{2} O_{3}),$ $Y_{2} O_{3},$ and ${Ga}_{2} O_{3},$ as high-k gate dielectrics on SiGe: A comparative study

S. Pal; S. K. Ray; B. R. Chakraborty; S. K. Lahiri; D. N. Bose

J. Appl. Phys. 90, 4103–4107 (2001) https://doi.org/10.1063/1.1405134

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Spectroscopy of a ferroelectric plasma cathode

A. Dunaevsky; K. Chirko; Ya. E. Krasik; J. Felsteiner; V. Bershtam

J. Appl. Phys. 90, 4108–4114 (2001) https://doi.org/10.1063/1.1404421

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Chemical order influence on the phase transition in the relaxor ${Pb(Sc}_{1/2} {Nb}_{1/2} {)O}_{3}$

O. Bidault; C. Perrin; C. Caranoni; N. Menguy

J. Appl. Phys. 90, 4115–4121 (2001) https://doi.org/10.1063/1.1405140

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Mode coupling in lead zirconate titanate/epoxy 1–3 piezocomposite rings

S. W. Or; H. L. W. Chan

J. Appl. Phys. 90, 4122–4129 (2001) https://doi.org/10.1063/1.1405139

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Room temperature aging behavior of thermally imprinted ${Pt/SrBi}_{2} {Ta}_{2} O_{9} /Pt$ ferroelectric thin film capacitors

Di Wu; Aidong Li; Huiqin Ling; Tao Yu; Zhiguo Liu; Naiben Ming

J. Appl. Phys. 90, 4130–4133 (2001) https://doi.org/10.1063/1.1402663

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NANOSCALE SCIENCE AND DESIGN

Effect of purification of the electrical conductivity and complex permittivity of multiwall carbon nanotubes

C. A. Grimes; E. C. Dickey; C. Mungle; K. G. Ong; D. Qian

J. Appl. Phys. 90, 4134–4137 (2001) https://doi.org/10.1063/1.1400100

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Size dependent magnetic phase of nanocrystalline ${Co}_{0.2} {Zn}_{0.8} {Fe}_{2} O_{4}$

S. Dey; A. Roy; J. Ghose; R. N. Bhowmik; R. Ranganathan

J. Appl. Phys. 90, 4138–4142 (2001) https://doi.org/10.1063/1.1401798

Abstract

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Factors responsible for the stability and the existence of a clean energy gap of a silicon nanocluster

Lei Liu; C. S. Jayanthi; Shi-Yu Wu

J. Appl. Phys. 90, 4143–4151 (2001) https://doi.org/10.1063/1.1402672

Abstract

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Thermal evolution of the magnetization in nanocrystalline Fe particles investigated by electron holography

E. Bonetti; L. Del Bianco; L. Pasquini; G. Matteucci; C. Beeli; S. Signoretti

J. Appl. Phys. 90, 4152–4158 (2001) https://doi.org/10.1063/1.1401797

Abstract

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(Fe–Co)–(Mg-fluoride) insulating nanogranular system with enhanced tunnel-type giant magnetoresistance

Nobukiyo Kobayashi; Shigehiro Ohnuma; Tsuyoshi Masumoto; Hiroyasu Fujimori

J. Appl. Phys. 90, 4159–4162 (2001) https://doi.org/10.1063/1.1376415

Abstract

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Nanoscale selective growth of GaAs by molecular beam epitaxy

Seung-Chang Lee; Kevin J. Malloy; S. R. J. Brueck

J. Appl. Phys. 90, 4163–4168 (2001) https://doi.org/10.1063/1.1401805

Abstract

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Transparent magnetic composites of ${ZnFe}_{2} O_{4}$ nanoparticles in silica

Z. H. Zhou; J. M. Xue; H. S. O. Chan; J. Wang

J. Appl. Phys. 90, 4169–4174 (2001) https://doi.org/10.1063/1.1404423

Abstract

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Crystal size and temperature measurements in nanostructured silicon using Raman spectroscopy

G. Viera; S. Huet; L. Boufendi

J. Appl. Phys. 90, 4175–4183 (2001) https://doi.org/10.1063/1.1398601

Abstract

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DEVICE PHYSICS (PACS 85)

Electrical properties of $metal/porous silicon /p- Si$ structures with thin porous silicon layer

L. A. Balagurov; S. C. Bayliss; A. F. Orlov; E. A. Petrova; B. Unal; D. G. Yarkin

J. Appl. Phys. 90, 4184–4190 (2001) https://doi.org/10.1063/1.1402670

Abstract

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Current crowding in GaN/InGaN light emitting diodes on insulating substrates

X. Guo; E. F. Schubert

J. Appl. Phys. 90, 4191–4195 (2001) https://doi.org/10.1063/1.1403665

Abstract

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Determination of traps in poly(p-phenylene vinylene) light emitting diodes by charge-based deep level transient spectroscopy

Olivier Gaudin; Richard B Jackman; Thien-Phap Nguyen; Philippe Le Rendu

J. Appl. Phys. 90, 4196–4204 (2001) https://doi.org/10.1063/1.1403669

Abstract

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Physical and electrical properties of a ${Si}_{3} N_{4} /Si/GaAs$ metal–insulator–semiconductor structure

Zhi Chen; Dawei Gong

J. Appl. Phys. 90, 4205–4210 (2001) https://doi.org/10.1063/1.1403683

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Second-order sound field during megasonic cleaning of patterned silicon wafers: Application to ridges and trenches

P. A. Deymier; J. O. Vasseur; A. Khelif; S. Raghavan

J. Appl. Phys. 90, 4211–4218 (2001) https://doi.org/10.1063/1.1398595

Abstract

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Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy

Dongsheng Li; M. Sumiya; S. Fuke; Deren Yang; Duanlin Que; Y. Suzuki; Y. Fukuda

J. Appl. Phys. 90, 4219–4223 (2001) https://doi.org/10.1063/1.1402966

Abstract

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Direct heteroepitaxy of crystalline $Y_{2} O_{3}$ on Si (001) for high-k gate dielectric applications

A. Dimoulas; A. Travlos; G. Vellianitis; N. Boukos; K. Argyropoulos

J. Appl. Phys. 90, 4224–4230 (2001) https://doi.org/10.1063/1.1403678

Abstract

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Production of calcium phosphate coatings on Ti6Al4V obtained by Nd:yttrium–aluminum–garnet laser cladding

F. Lusquiños; J. Pou; J. L. Arias; M. Boutinguiza; B. León; M. Pérez-Amor; F. C. M. Driessens; J. C. Merry; I. Gibson; S. Best; W. Bonfield

J. Appl. Phys. 90, 4231–4236 (2001) https://doi.org/10.1063/1.1402975

Abstract

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Ion beam deposition of fluorinated amorphous carbon

C. Ronning; M. Büttner; U. Vetter; H. Feldermann; O. Wondratschek; H. Hofsäss; W. Brunner; Frederick C. K. Au; Quan Li; S. T. Lee

J. Appl. Phys. 90, 4237–4245 (2001) https://doi.org/10.1063/1.1404419

Abstract

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ZnO–CoO solid solution thin films

Y.-Z. Yoo; T. Fukumura; Zhengwu Jin; K. Hasegawa; M. Kawasaki; P. Ahmet; T. Chikyow; H. Koinuma

J. Appl. Phys. 90, 4246–4250 (2001) https://doi.org/10.1063/1.1402142

Abstract

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Conductivity and photoconductivity in boron doped diamond films: Microwave measurements

Frédéric Gevrey; Alain Gire; David Gaudiot; Jean-Gérard Théobald; Etienne Gheeraert; Matthieu Bernard; Freddy Torrealba-Anzola

J. Appl. Phys. 90, 4251–4255 (2001) https://doi.org/10.1063/1.1405143

Abstract

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Chemical and thermal reduction of thin films of copper (II) oxide and copper (I) oxide

P. D. Kirsch; J. G. Ekerdt

J. Appl. Phys. 90, 4256–4264 (2001) https://doi.org/10.1063/1.1403675

Abstract

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Heterojunction properties of electrodeposited CdTe/CdS solar cells

A. E. Rakhshani

J. Appl. Phys. 90, 4265–4271 (2001) https://doi.org/10.1063/1.1397279

Abstract

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Polymorphous Si thin films from radio frequency plasmas of ${SiH}_{4}$ diluted in Ar: A study by transmission electron microscopy and Raman spectroscopy

G. Viera; S. Huet; E. Bertran; L. Boufendi

J. Appl. Phys. 90, 4272–4280 (2001) https://doi.org/10.1063/1.1398066

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COMMUNICATIONS

Extraordinarily wide optical gain spectrum in 2.2–2.5 μm In(Al)GaAsSb/GaSb quantum-well ridge-waveguide lasers

D. V. Donetsky; D. Westerfeld; G. L. Belenky; R. U. Martinelli; D. Z. Garbuzov; J. C. Connolly

J. Appl. Phys. 90, 4281–4283 (2001) https://doi.org/10.1063/1.1391421

Abstract

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Evidence for hole and electron trapping in plasma deposited ${ZrO}_{2}$ thin films

J. R. Chavez; R. A. B. Devine; L. Koltunski

J. Appl. Phys. 90, 4284–4286 (2001) https://doi.org/10.1063/1.1401796

Abstract

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Electrodeposition of compound semiconductors in polymer channels of 100 nm diameter

R. Engelhardt; R. Könenkamp

J. Appl. Phys. 90, 4287–4289 (2001) https://doi.org/10.1063/1.1403668

Abstract

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Ge/Si interdiffusion in the GeSi dots and wetting layers

J. Wan; Y. H. Luo; Z. M. Jiang; G. Jin; J. L. Liu; Kang L. Wang; X. Z. Liao; J. Zou

J. Appl. Phys. 90, 4290–4292 (2001) https://doi.org/10.1063/1.1403667

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Diffusion of ion-implanted boron in germanium

Suresh Uppal; Arthur F. W. Willoughby; Janet M. Bonar; Alan G. R. Evans; Nick E. B. Cowern; Richard Morris; Mark G. Dowsett

J. Appl. Phys. 90, 4293–4295 (2001) https://doi.org/10.1063/1.1402664

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ADDENDA

Addendum to “Preisach model for simulation of ferroelectric capacitors” [J. Appl. Phys. 89, 3420 (2001)]

A. T. Bartic

J. Appl. Phys. 90, 4296 (2001) https://doi.org/10.1063/1.1396826

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ADDENDA

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