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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Resonant and nonresonant hyper–Rayleigh scattering of charge-transfer chromophores

C. H. Wang; J. N. Woodford; C. Zhang; L. R. Dalton

J. Appl. Phys. 89, 4209–4217 (2001) https://doi.org/10.1063/1.1354636

Abstract

View articletitled, Resonant and nonresonant hyper–Rayleigh scattering of charge-transfer chromophores

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Electrostatic probe diagnostics of a planar-type radio-frequency inductively coupled oxygen plasma

D. C. Seo; T. H. Chung; H. J. Yoon; G. H. Kim

J. Appl. Phys. 89, 4218–4223 (2001) https://doi.org/10.1063/1.1354633

Abstract

View articletitled, Electrostatic probe diagnostics of a planar-type radio-frequency inductively coupled oxygen plasma

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Influence of beam head effects on high-power klystron amplifier

Han S. Uhm; Hyoung S. Kim; Gun S. Park

J. Appl. Phys. 89, 4224–4230 (2001) https://doi.org/10.1063/1.1355695

Abstract

View articletitled, Influence of beam head effects on high-power klystron amplifier

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Global breakdown in an alternating current plasma display panel

Y. Ikeda; K. Suzuki; H. Fukumoto; M. Shibata; M. Ishigaki; J. P. Verboncoeur; P. J. Christenson; C. K. Birdsall

J. Appl. Phys. 89, 4231–4239 (2001) https://doi.org/10.1063/1.1351058

Abstract

View articletitled, Global breakdown in an alternating current plasma display panel

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Global model of inductively coupled Ar plasmas using two-temperature approximation

T. Kimura; K. Ohe

J. Appl. Phys. 89, 4240–4246 (2001) https://doi.org/10.1063/1.1354652

Abstract

View articletitled, Global model of inductively coupled Ar plasmas using two-temperature approximation

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Characteristic dynamic behavior of dc arc near graphite bar electrodes with short gap

Shin-ichi Tanaka; Toshiro Matsumura

J. Appl. Phys. 89, 4247–4254 (2001) https://doi.org/10.1063/1.1355720

Abstract

View articletitled, Characteristic dynamic behavior of dc arc near graphite bar electrodes with short gap

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Wire vibration, bowing, and breakage in wire electrical discharge machining

C. Arunachalam; M. Aulia; B. Bozkurt; P. T. Eubank

J. Appl. Phys. 89, 4255–4262 (2001) https://doi.org/10.1063/1.1355281

Abstract

View articletitled, Wire vibration, bowing, and breakage in wire electrical discharge machining

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

Aurangzeb Khan; Masafumi Yamaguchi; Jacques C. Bourgoin; Koshi Ando; Tatsuya Takamoto

J. Appl. Phys. 89, 4263–4268 (2001) https://doi.org/10.1063/1.1353806

Abstract

View articletitled, Recombination enhanced defect reactions in 1 MeV electron irradiated p InGaP

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Copper gettering by aluminum precipitates in aluminum-implanted silicon

G. A. Petersen; S. M. Myers

J. Appl. Phys. 89, 4269–4274 (2001) https://doi.org/10.1063/1.1353557

Abstract

View articletitled, Copper gettering by aluminum precipitates in aluminum-implanted silicon

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Computer simulation of disordering and amorphization by Si and Au recoils in 3C–SiC

F. Gao; W. J. Weber

J. Appl. Phys. 89, 4275–4281 (2001) https://doi.org/10.1063/1.1355717

Abstract

View articletitled, Computer simulation of disordering and amorphization by Si and Au recoils in 3C–SiC

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Nanometer-scale metal precipitates in multicrystalline silicon solar cells

Scott A. McHugo; A. C. Thompson; A. Mohammed; G. Lamble; I. Périchaud; S. Martinuzzi; M. Werner; M. Rinio; W. Koch; H.-U. Hoefs; C. Haessler

J. Appl. Phys. 89, 4282–4288 (2001) https://doi.org/10.1063/1.1330552

Abstract

View articletitled, Nanometer-scale metal precipitates in multicrystalline silicon solar cells

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Shallow thermal donors in nitrogen-doped silicon

V. V. Voronkov; M. Porrini; P. Collareta; M. G. Pretto; R. Scala; R. Falster; G. I. Voronkova; A. V. Batunina; V. N. Golovina; L. V. Arapkina; A. S. Guliaeva; M. G. Milvidski

J. Appl. Phys. 89, 4289–4293 (2001) https://doi.org/10.1063/1.1356436

Abstract

View articletitled, Shallow thermal donors in nitrogen-doped silicon

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Elastic properties, intrinsic and photoinduced stress in hydrogenated amorphous-silicon thin films with different hydrogen content

E. Spanakis; E. Stratakis; P. Tzanetakis; Qi Wang

J. Appl. Phys. 89, 4294–4300 (2001) https://doi.org/10.1063/1.1353807

Abstract

View articletitled, Elastic properties, intrinsic and photoinduced stress in hydrogenated amorphous-silicon thin films with different hydrogen content

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Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

Katsuhiko Nakai; Yoshiharu Inoue; Hideki Yokota; Atsushi Ikari; Jun Takahashi; Akiyoshi Tachikawa; Kouichi Kitahara; Yasumitsu Ohta; Wataru Ohashi

J. Appl. Phys. 89, 4301–4309 (2001) https://doi.org/10.1063/1.1356425

Abstract

View articletitled, Oxygen precipitation in nitrogen-doped Czochralski-grown silicon crystals

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Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

P. K. Giri; S. Coffa; V. Raineri; V. Privitera; G. Galvagno; A. La Ferla; E. Rimini

J. Appl. Phys. 89, 4310–4317 (2001) https://doi.org/10.1063/1.1357464

Abstract

View articletitled, Photoluminescence and structural studies on extended defect evolution during high-temperature processing of ion-implanted epitaxial silicon

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Optical alignment of liquid crystals

D. Dantsker; J. Kumar; S. K. Tripathy

J. Appl. Phys. 89, 4318–4325 (2001) https://doi.org/10.1063/1.1353811

Abstract

View articletitled, Optical alignment of liquid crystals

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Threading dislocation evolution in mega-electron-volt phosphorus implanted silicon

Craig Jasper; Suman K. Banerjee; Allen Hoover; Kevin S. Jones

J. Appl. Phys. 89, 4326–4331 (2001) https://doi.org/10.1063/1.1351865

Abstract

View articletitled, Threading dislocation evolution in mega-electron-volt phosphorus implanted silicon

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Electromigration in eutectic SnPb solder lines

Q. T. Huynh; C. Y. Liu; Chih Chen; K. N. Tu

J. Appl. Phys. 89, 4332–4335 (2001) https://doi.org/10.1063/1.1357459

Abstract

View articletitled, Electromigration in eutectic SnPb solder lines

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Growth and characterization of a novel ${In}_{2} {Se}_{3}$ structure

C. H. de Groot; J. S. Moodera

J. Appl. Phys. 89, 4336–4340 (2001) https://doi.org/10.1063/1.1355287

Abstract

View articletitled, Growth and characterization of a novel <math xmlns="http://www.w3.org/1998/Math/MathML"> <msub xmlns=""> <mi mathvariant="normal">In</mi> <mrow> <mi mathvariant="normal">2</mi> </mrow> </msub> <msub xmlns=""> <mi mathvariant="normal">Se</mi> <mrow> <mi mathvariant="normal">3</mi> </mrow> </msub> </math> structure

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Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm

A. Passaseo; R. Rinaldi; M. Longo; S. Antonaci; A. L. Convertino; R. Cingolani; A. Taurino; M. Catalano

J. Appl. Phys. 89, 4341–4348 (2001) https://doi.org/10.1063/1.1351861

Abstract

View articletitled, Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 μm

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Elastic properties of nanocrystalline zirconium–silicon–boron thin films

M. Chirita; H. Xia; R. Sooryakumar; J. B. Tolle; V. M. Torres; B. J. Wilkens; D. J. Smith; J. Kouvetakis; I. S. T. Tsong

J. Appl. Phys. 89, 4349–4353 (2001) https://doi.org/10.1063/1.1354632

Abstract

View articletitled, Elastic properties of nanocrystalline zirconium–silicon–boron thin films

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Dynamic behavior of thermionic dispenser cathodes under ion bombardment

R. Cortenraad; A. W. Denier van der Gon; H. H. Brongersma; G. Gärtner; D. Raasch; A. Manenschijn

J. Appl. Phys. 89, 4354–4364 (2001) https://doi.org/10.1063/1.1356433

Abstract

View articletitled, Dynamic behavior of thermionic dispenser cathodes under ion bombardment

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Optoelectronic device performance on reduced threading dislocation density GaAs/Si

P. J. Taylor; W. A. Jesser; J. D. Benson; M. Martinka; J. H. Dinan; J. Bradshaw; M. Lara-Taysing; R. P. Leavitt; G. Simonis; W. Chang; W. W. Clark, III; K. A. Bertness

J. Appl. Phys. 89, 4365–4375 (2001) https://doi.org/10.1063/1.1347000

Abstract

View articletitled, Optoelectronic device performance on reduced threading dislocation density GaAs/Si

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Energy dependence of electronic energy relaxation in poly(p-phenylenevinylene)

M. W. McCutcheon; Jeff F. Young; A. G. Pattantyus-Abraham; M. O. Wolf

J. Appl. Phys. 89, 4376–4379 (2001) https://doi.org/10.1063/1.1353555

Abstract

View articletitled, Energy dependence of electronic energy relaxation in poly(p-phenylenevinylene)

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Giant Faraday rotation of blue light in epitaxial ${Ce}_{x} Y_{3−x} {Fe}_{5} O_{12}$ films grown by pulsed laser deposition

Hyonju Kim; Alex Grishin; K. V. Rao

J. Appl. Phys. 89, 4380–4383 (2001) https://doi.org/10.1063/1.1357463

Abstract

View articletitled, Giant Faraday rotation of blue light in epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mtext>3−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">12</mi></mrow></msub></math> films grown by pulsed laser deposition

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Visible emission from AlN doped with Eu and Tb ions

W. M. Jadwisienczak; H. J. Lozykowski; I. Berishev; A. Bensaoula; I. G. Brown

J. Appl. Phys. 89, 4384–4390 (2001) https://doi.org/10.1063/1.1357467

Abstract

View articletitled, Visible emission from AlN doped with Eu and Tb ions

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Radiative recombination via intrinsic defects in ${Cu}_{x} {Ga}_{y} {Se}_{2}$

A. Bauknecht; S. Siebentritt; J. Albert; M. Ch. Lux-Steiner

J. Appl. Phys. 89, 4391–4400 (2001) https://doi.org/10.1063/1.1357786

Abstract

View articletitled, Radiative recombination via intrinsic defects in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Se</mi><mrow><mn>2</mn></mrow></msub></math>

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Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

Sylvia G. Spruytte; Christopher W. Coldren; James S. Harris; William Wampler; Peter Krispin; Klaus Ploog; Michael C. Larson

J. Appl. Phys. 89, 4401–4406 (2001) https://doi.org/10.1063/1.1352675

Abstract

View articletitled, Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

J. H. Kim; S. J. Jo; J. W. Kim; J.-I. Song

J. Appl. Phys. 89, 4407–4409 (2001) https://doi.org/10.1063/1.1353559

Abstract

View articletitled, Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

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Diffusion photovoltage in poly(p -phenylenevinylene)

V. Duzhko; Th. Dittrich; B. Kamenev; V. Yu. Timoshenko; W. Brütting

J. Appl. Phys. 89, 4410–4412 (2001) https://doi.org/10.1063/1.1355721

Abstract

View articletitled, Diffusion photovoltage in poly(p -phenylenevinylene)

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Fabrication and characterization of pulse laser deposited ${Ni}_{2} Si$ Ohmic contacts on n-SiC for high power and high temperature device applications

M. W. Cole; P. C. Joshi; M. Ervin

J. Appl. Phys. 89, 4413–4416 (2001) https://doi.org/10.1063/1.1357777

Abstract

View articletitled, Fabrication and characterization of pulse laser deposited <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ni</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Si</mi></math> Ohmic contacts on n-SiC for high power and high temperature device applications

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Electrical properties of fluorinated amorphous carbon films

N. Biswas; H. R. Harris; X. Wang; G. Celebi; H. Temkin; S. Gangopadhyay

J. Appl. Phys. 89, 4417–4421 (2001) https://doi.org/10.1063/1.1353804

Abstract

View articletitled, Electrical properties of fluorinated amorphous carbon films

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Carrier transport in amorphous SiC/crystalline silicon heterojunctions

A. N. Nazarov; Ya. N. Vovk; V. S. Lysenko; V. I. Turchanikov; V. A. Scryshevskii; S. Ashok

J. Appl. Phys. 89, 4422–4428 (2001) https://doi.org/10.1063/1.1355698

Abstract

View articletitled, Carrier transport in amorphous SiC/crystalline silicon heterojunctions

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Compensation of charge fluctuations in quantum wells with dual tunneling and photon-assisted escape paths

Danhong Huang; Anjali Singh; D. A. Cardimona; Christian Morath

J. Appl. Phys. 89, 4429–4437 (2001) https://doi.org/10.1063/1.1351867

Abstract

View articletitled, Compensation of charge fluctuations in quantum wells with dual tunneling and photon-assisted escape paths

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Magnetic field distribution around superconducting monofilamentary Bi-2223/Ag tape

H. Drulis; L. Folcik; M. Drulis

J. Appl. Phys. 89, 4438–4441 (2001) https://doi.org/10.1063/1.1357465

Abstract

View articletitled, Magnetic field distribution around superconducting monofilamentary Bi-2223/Ag tape

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Negative resistance contribution of a domain-wall structure in a constricted geometry

S. J. C. H. Theeuwen; J. Caro; K. I. Schreurs; R. P. van Gorkom; K. P. Wellock; N. N. Gribov; S. Radelaar; R. M. Jungblut; W. Oepts; R. Coehoorn; V. I. Kozub

J. Appl. Phys. 89, 4442–4453 (2001) https://doi.org/10.1063/1.1351547

Abstract

View articletitled, Negative resistance contribution of a domain-wall structure in a constricted geometry

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Spin wave instability in single crystal Zn–Y hexagonal ferrite at 8.93 GHz

Richard G. Cox; Carl E. Patton; Michael A. Wittenauer; Pavel Kabos; Liang Chen

J. Appl. Phys. 89, 4454–4469 (2001) https://doi.org/10.1063/1.1352689

Abstract

View articletitled, Spin wave instability in single crystal Zn–Y hexagonal ferrite at 8.93 GHz

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Electron paramagnetic resonance studies of ${Mn}^{2+}$ ions in ${β-Ga}_{2} O_{3}$ single crystal

I. G. Kim; T. H. Yeom; S. H. Lee; Y. M. Yu; H. W. Shin; S. H. Choh

J. Appl. Phys. 89, 4470–4475 (2001) https://doi.org/10.1063/1.1357782

Abstract

View articletitled, Electron paramagnetic resonance studies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mtext>2+</mtext></mrow></msup></math> ions in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">β-Ga</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> single crystal

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Dielectric studies of ${Cd}_{1−x−y} {Zn}_{x} {Mn}_{y} Te$ crystals

H. M. Lin; Y. F. Chen; J. L. Shen; W. C. Chou

J. Appl. Phys. 89, 4476–4479 (2001) https://doi.org/10.1063/1.1351006

Abstract

View articletitled, Dielectric studies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi>y</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math> crystals

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Lifetime of ferroelectric cathodes

A. Dunaevsky; Ya. E. Krasik; J. Felsteiner; S. Dorfman; A. Berner; A. Sternlieb

J. Appl. Phys. 89, 4480–4485 (2001) https://doi.org/10.1063/1.1355285

Abstract

View articletitled, Lifetime of ferroelectric cathodes

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Effective medium theory for large particulate size composites

Aleksandr J. Stoyanov; Eugene C. Fischer; Herbert Überall

J. Appl. Phys. 89, 4486–4490 (2001) https://doi.org/10.1063/1.1352683

Abstract

View articletitled, Effective medium theory for large particulate size composites

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Spectroellipsometric study of sol–gel derived potassium sodium strontium barium niobate films

C. L. Mak; B. Lai; K. H. Wong; C. L. Choy; D. Mo; Y. L. Zhang

J. Appl. Phys. 89, 4491–4496 (2001) https://doi.org/10.1063/1.1355283

Abstract

View articletitled, Spectroellipsometric study of sol–gel derived potassium sodium strontium barium niobate films

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Microstructure and growth mode at early growth stage of laser-ablated epitaxial ${Pb(Zr}_{0.52} {Ti}_{0.48}) O_{3}$ films on a ${SrTiO}_{3}$ substrate

W. C. Goh; S. Y. Xu; S. J. Wang; C. K. Ong

J. Appl. Phys. 89, 4497–4502 (2001) https://doi.org/10.1063/1.1356426

Abstract

View articletitled, Microstructure and growth mode at early growth stage of laser-ablated epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mtext>0.52</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>0.48</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> films on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrTiO</mi><mrow><mn>3</mn></mrow></msub></math> substrate

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Piezo- and pyroelectricity of a polymer-foam space-charge electret

Gerhard S. Neugschwandtner; Reinhard Schwödiauer; Simona Bauer-Gogonea; Siegfried Bauer; Mika Paajanen; Jukka Lekkala

J. Appl. Phys. 89, 4503–4511 (2001) https://doi.org/10.1063/1.1355719

Abstract

View articletitled, Piezo- and pyroelectricity of a polymer-foam space-charge electret

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Dielectric relaxation in ${Bi}_{2} O_{3} {–ZnO–Nb}_{2} O_{5}$ cubic pyrochlore

Juan C. Nino; Michael T. Lanagan; Clive A. Randall

J. Appl. Phys. 89, 4512–4516 (2001) https://doi.org/10.1063/1.1357468

Abstract

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Orientation dependence of ferroelectricity of epitaxially grown ${Pb(Zr}_{x} {Ti}_{1−x}) O_{3}$ thin films prepared by metalorganic chemical vapor deposition

Kuniharu Nagashima; Masanori Aratani; Hiroshi Funakubo

J. Appl. Phys. 89, 4517–4522 (2001) https://doi.org/10.1063/1.1355718

Abstract

View articletitled, Orientation dependence of ferroelectricity of epitaxially grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films prepared by metalorganic chemical vapor deposition

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Elastic fields of quantum dots in subsurface layers

A. E. Romanov; G. E. Beltz; W. T. Fischer; P. M. Petroff; J. S. Speck

J. Appl. Phys. 89, 4523–4531 (2001) https://doi.org/10.1063/1.1352681

Abstract

View articletitled, Elastic fields of quantum dots in subsurface layers

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Microwave characterization of filled polymers

Christian Brosseau; Patrick Quéffélec; Philippe Talbot

J. Appl. Phys. 89, 4532–4540 (2001) https://doi.org/10.1063/1.1343521

Abstract

View articletitled, Microwave characterization of filled polymers

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Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric ${PbZrO}_{3}$ thin films

S. S. N. Bharadwaja; S. B. Krupanidhi

J. Appl. Phys. 89, 4541–4547 (2001) https://doi.org/10.1063/1.1331659

Abstract

View articletitled, Backward switching phenomenon from field forced ferroelectric to antiferroelectric phases in antiferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbZrO</mi><mrow><mn>3</mn></mrow></msub></math> thin films

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NANOSCALE SCIENCE AND DESIGN

Relaxation behavior of nonlinear optical response in borate glasses containing gold nanoparticles

Jun Sasai; Kazuyuki Hirao

J. Appl. Phys. 89, 4548–4553 (2001) https://doi.org/10.1063/1.1355279

Abstract

View articletitled, Relaxation behavior of nonlinear optical response in borate glasses containing gold nanoparticles

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Structure and mechanical flexibility of carbon nanotube ribbons: An atomic-force microscopy study

Min-Feng Yu; Mark J. Dyer; Rodney S. Ruoff

J. Appl. Phys. 89, 4554–4557 (2001) https://doi.org/10.1063/1.1356437

Abstract

View articletitled, Structure and mechanical flexibility of carbon nanotube ribbons: An atomic-force microscopy study

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Normal incidence ${InAs/Al}_{x} {Ga}_{1−x} As$ quantum dot infrared photodetectors with undoped active region

Zhonghui Chen; O. Baklenov; E. T. Kim; I. Mukhametzhanov; J. Tie; A. Madhukar; Z. Ye; J. C. Campbell

J. Appl. Phys. 89, 4558–4563 (2001) https://doi.org/10.1063/1.1356430

Abstract

View articletitled, Normal incidence <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">InAs/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum dot infrared photodetectors with undoped active region

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DEVICE PHYSICS (PACS 85)

Interdiffusion of CdS and ${Zn}_{2} {SnO}_{4}$ layers and its application in CdS/CdTe polycrystalline thin-film solar cells

X. Wu; S. Asher; D. H. Levi; D. E. King; Y. Yan; T. A. Gessert; P. Sheldon

J. Appl. Phys. 89, 4564–4569 (2001) https://doi.org/10.1063/1.1351539

Abstract

View articletitled, Interdiffusion of CdS and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">SnO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> layers and its application in CdS/CdTe polycrystalline thin-film solar cells

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Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage

Takayuki Aoyama; Kunihiro Suzuki; Hiroko Tashiro; Yoko Tada; Hiroshi Arimoto; Kei Horiuchi

J. Appl. Phys. 89, 4570–4574 (2001) https://doi.org/10.1063/1.1356428

Abstract

View articletitled, Boron penetration in p-channel metal–oxide–semiconductor field-effect transistors enhanced by gate ion-implantation damage

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Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes

B. Ruhstaller; S. A. Carter; S. Barth; H. Riel; W. Riess; J. C. Scott

J. Appl. Phys. 89, 4575–4586 (2001) https://doi.org/10.1063/1.1352027

Abstract

View articletitled, Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Analysis of amplification of thermal vibrations of a microcantilever

G. Muralidharan; A. Mehta; S. Cherian; T. Thundat

J. Appl. Phys. 89, 4587–4591 (2001) https://doi.org/10.1063/1.1357779

Abstract

View articletitled, Analysis of amplification of thermal vibrations of a microcantilever

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Laser-cooled fluorescence mass spectrometry using laser-cooled barium ions in a tandem linear ion trap

Takashi Baba; Izumi Waki

J. Appl. Phys. 89, 4592–4598 (2001) https://doi.org/10.1063/1.1354638

Abstract

View articletitled, Laser-cooled fluorescence mass spectrometry using laser-cooled barium ions in a tandem linear ion trap

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Thermal resistance of bridged cracks in fiber-reinforced ceramic composites

John Dryden; Frank Zok

J. Appl. Phys. 89, 4599–4611 (2001) https://doi.org/10.1063/1.1354648

Abstract

View articletitled, Thermal resistance of bridged cracks in fiber-reinforced ceramic composites

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Sintering of unequal grains

S. C. Colbeck

J. Appl. Phys. 89, 4612–4618 (2001) https://doi.org/10.1063/1.1356427

Abstract

View articletitled, Sintering of unequal grains

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Thermal stability of laser-produced iron nitrides

M. Han; E. Carpene; F. Landry; K.-P. Lieb; P. Schaaf

J. Appl. Phys. 89, 4619–4624 (2001) https://doi.org/10.1063/1.1354634

Abstract

View articletitled, Thermal stability of laser-produced iron nitrides

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Hexagonal voids and the formation of micropipes during SiC sublimation growth

Thomas A. Kuhr; Edward K. Sanchez; Marek Skowronski; William M. Vetter; Michael Dudley

J. Appl. Phys. 89, 4625–4630 (2001) https://doi.org/10.1063/1.1355716

Abstract

View articletitled, Hexagonal voids and the formation of micropipes during SiC sublimation growth

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Growth of the Cr oxides via activated oxygen reactive molecular beam epitaxy: Comparison of the Mo and W oxides

N. J. C. Ingle; R. H. Hammond; M. R. Beasley

J. Appl. Phys. 89, 4631–4635 (2001) https://doi.org/10.1063/1.1355286

Abstract

View articletitled, Growth of the Cr oxides via activated oxygen reactive molecular beam epitaxy: Comparison of the Mo and W oxides

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Passivation of an anodic oxide/p-Si interface stimulated by electron injection

Th. Dittrich; Th. Burke; F. Koch; J. Rappich

J. Appl. Phys. 89, 4636–4642 (2001) https://doi.org/10.1063/1.1356431

Abstract

View articletitled, Passivation of an anodic oxide/p-Si interface stimulated by electron injection

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Crystallization of amorphous germanium in an $Al /a- Ge$ bilayer film deposited on a ${SiO}_{2}$ substrate

Futoshi Katsuki; Kenji Hanafusa; Mitsuharu Yonemura; Toshiyuki Koyama; Minoru Doi

J. Appl. Phys. 89, 4643–4647 (2001) https://doi.org/10.1063/1.1359149

Abstract

View articletitled, Crystallization of amorphous germanium in an <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Al</mi><mi xmlns="">/a-</mi><mi mathvariant="normal" xmlns="">Ge</mi></math> bilayer film deposited on a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> substrate

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Study of dynamics and mechanism of metal-induced silicon growth

Elena A. Guliants; Wayne A. Anderson

J. Appl. Phys. 89, 4648–4656 (2001) https://doi.org/10.1063/1.1359150

Abstract

View articletitled, Study of dynamics and mechanism of metal-induced silicon growth

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Evaluation of a governing equation for the macroscopic dynamics of electrorheological fluids

Luiz B. Pompeo Neto; Antonio Celso F. Arruda; Sheila L. Vieira

J. Appl. Phys. 89, 4657–4663 (2001) https://doi.org/10.1063/1.1357466

Abstract

View articletitled, Evaluation of a governing equation for the macroscopic dynamics of electrorheological fluids

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COMMUNICATIONS

Defects introduced in cadmium telluride by γ irradiation

A. Cavallini; B. Fraboni; W. Dusi; M. Zanarini; M. Hage-Ali; P. Siffert

J. Appl. Phys. 89, 4664–4666 (2001) https://doi.org/10.1063/1.1351859

Abstract

View articletitled, Defects introduced in cadmium telluride by γ irradiation

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Taylor dispersion of a solute in a microfluidic channel

Daniel A. Beard

J. Appl. Phys. 89, 4667–4669 (2001) https://doi.org/10.1063/1.1357462

Abstract

View articletitled, Taylor dispersion of a solute in a microfluidic channel

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CoNi/Pt interface roughness probed by nonlinear magneto-optics, x-ray scattering and atomic force microscopy

K. Bal; A. Kirilyuk; Th. Rasing; Y. Luo; K. Samwer; M. A. M. Haast; J. C. Lodder

J. Appl. Phys. 89, 4670–4672 (2001) https://doi.org/10.1063/1.1342799

Abstract

View articletitled, CoNi/Pt interface roughness probed by nonlinear magneto-optics, x-ray scattering and atomic force microscopy

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Simultaneous electroluminescence and photoluminescence aging studies of tris(8-hydroxyquinoline) aluminum-based organic light-emitting devices

Zoran D. Popovic; Hany Aziz; Nan-Xing Hu; Andronique Ioannidis; Paulo N. M. dos Anjos

J. Appl. Phys. 89, 4673–4675 (2001) https://doi.org/10.1063/1.1354631

Abstract

View articletitled, Simultaneous electroluminescence and photoluminescence aging studies of tris(8-hydroxyquinoline) aluminum-based organic light-emitting devices

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Influence of As incorporation on the deviation from Vegard’s law in the ${Al}_{x} {Ga}_{1−x} Sb/GaSb$ system

C. Bocchi; S. Franchi; F. Germini; A. Baraldi; R. Magnanini; D. De Salvador; M. Berti; A. V. Drigo

J. Appl. Phys. 89, 4676–4678 (2001) https://doi.org/10.1063/1.1357460

Abstract

View articletitled, Influence of As incorporation on the deviation from Vegard’s law in the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Sb/GaSb</mi></math> system

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

NANOSCALE SCIENCE AND DESIGN

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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