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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Threshold gain and gain-enhancement due to distributed-feedback in two-dimensional photonic-crystal lasers

Nobuhiko Susa

J. Appl. Phys. 89, 815–823 (2001) https://doi.org/10.1063/1.1332806

Abstract

View articletitled, Threshold gain and gain-enhancement due to distributed-feedback in two-dimensional photonic-crystal lasers

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In- and out-of-plane propagation of electromagnetic waves in low index contrast two dimensional photonic crystals

S. Foteinopoulou; A. Rosenberg; M. M. Sigalas; C. M. Soukoulis

J. Appl. Phys. 89, 824–830 (2001) https://doi.org/10.1063/1.1330250

Abstract

View articletitled, In- and out-of-plane propagation of electromagnetic waves in low index contrast two dimensional photonic crystals

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Characterization and minimization of flicker in silicon light valves

H. C. Huang; P. W. Cheng; H. S. Kwok

J. Appl. Phys. 89, 831–837 (2001) https://doi.org/10.1063/1.1331073

Abstract

View articletitled, Characterization and minimization of flicker in silicon light valves

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Viscoelastic liquid crystal colloids for the continuous processing of twisted nematic electro-optical cells

Marysia C. W. van Boxtel; Rob H. C. Janssen; Cees W. M. Bastiaansen; Dick J. Broer

J. Appl. Phys. 89, 838–842 (2001) https://doi.org/10.1063/1.1335648

Abstract

View articletitled, Viscoelastic liquid crystal colloids for the continuous processing of twisted nematic electro-optical cells

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CuH and CuBr absorption measurements and consequences on copper seeding in a Cu–HBr laser medium

Frédéric Girard; Erick Le Guyadec; Philippe Delaporte

J. Appl. Phys. 89, 843–848 (2001) https://doi.org/10.1063/1.1326471

Abstract

View articletitled, CuH and CuBr absorption measurements and consequences on copper seeding in a Cu–HBr laser medium

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Second order nonlinear optical properties of In-doped lithium niobate

D. Xue; K. Betzler; H. Hesse

J. Appl. Phys. 89, 849–854 (2001) https://doi.org/10.1063/1.1336563

Abstract

View articletitled, Second order nonlinear optical properties of In-doped lithium niobate

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Observation of light propagation in two-dimensional photonic crystal-based bent optical waveguides

S. Yamada; T. Koyama; Y. Katayama; N. Ikeda; Y. Sugimoto; K. Asakawa; N. Kawai; K. Inoue

J. Appl. Phys. 89, 855–858 (2001) https://doi.org/10.1063/1.1336517

Abstract

View articletitled, Observation of light propagation in two-dimensional photonic crystal-based bent optical waveguides

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Simultaneous measurement of absorption coefficient, thermal diffusivity, and flow velocity in a gas jet with pulsed photothermal deflection spectroscopy

B. C. Li; R. Gupta

J. Appl. Phys. 89, 859–868 (2001) https://doi.org/10.1063/1.1332802

Abstract

View articletitled, Simultaneous measurement of absorption coefficient, thermal diffusivity, and flow velocity in a gas jet with pulsed photothermal deflection spectroscopy

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Photoresist etching in an inductively coupled, traveling wave driven, large area plasma source

K. Takechi; M. A. Lieberman

J. Appl. Phys. 89, 869–877 (2001) https://doi.org/10.1063/1.1331336

Abstract

View articletitled, Photoresist etching in an inductively coupled, traveling wave driven, large area plasma source

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Inflight electron impact excitation in ionized metal physical vapor deposition

Junqing Lu; Mark J. Kushner

J. Appl. Phys. 89, 878–882 (2001) https://doi.org/10.1063/1.1333026

Abstract

View articletitled, Inflight electron impact excitation in ionized metal physical vapor deposition

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Corona discharge supersonic free-jet for III–V nitride growth via $A^{3} Σ_{u}^{+}$ metastable nitrogen molecules

D. C. Jordan; C. T. Burns; R. B. Doak

J. Appl. Phys. 89, 883–892 (2001) https://doi.org/10.1063/1.1331646

Abstract

View articletitled, Corona discharge supersonic free-jet for III–V nitride growth via <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>A </mi><mrow><mn>3</mn></mrow></msup><msubsup xmlns=""><mi>Σ</mi><mrow><mi>u</mi></mrow><mrow><mi>+</mi></mrow></msubsup></math> metastable nitrogen molecules

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Molecular composition of films and solid particles polymerized in fluorocarbon plasmas

Kazuo Takahashi; Kunihide Tachibana

J. Appl. Phys. 89, 893–899 (2001) https://doi.org/10.1063/1.1334636

Abstract

View articletitled, Molecular composition of films and solid particles polymerized in fluorocarbon plasmas

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CF, CF₂, and SiF densities in inductively driven discharges containing C₂F₆, C₄F₈, and CHF₃

G. A. Hebner

J. Appl. Phys. 89, 900–910 (2001) https://doi.org/10.1063/1.1332092

Abstract

View articletitled, CF, CF2, and SiF densities in inductively driven discharges containing C2F6, C4F8, and CHF3

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Spatial profiles of neutral, ion, and etch uniformity in a large-area high-density plasma reactor

Seokmin Yun; George R. Tynan

J. Appl. Phys. 89, 911–914 (2001) https://doi.org/10.1063/1.1335620

Abstract

View articletitled, Spatial profiles of neutral, ion, and etch uniformity in a large-area high-density plasma reactor

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Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas

Brett A. Cruden; Karen K. Gleason; Herbert H. Sawin

J. Appl. Phys. 89, 915–922 (2001) https://doi.org/10.1063/1.1334936

Abstract

View articletitled, Time resolved ultraviolet absorption spectroscopy of pulsed fluorocarbon plasmas

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Effect of sheath evolution on metal ion implantation in a vacuum arc plasma source

M. M. M. Bilek

J. Appl. Phys. 89, 923–927 (2001) https://doi.org/10.1063/1.1331072

Abstract

View articletitled, Effect of sheath evolution on metal ion implantation in a vacuum arc plasma source

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Investigation of two infrared bands at 1032 and $1043 {cm}^{−1}$ in neutron irradiated silicon

C. A. Londos; L. G. Fytros

J. Appl. Phys. 89, 928–932 (2001) https://doi.org/10.1063/1.1329316

Abstract

View articletitled, Investigation of two infrared bands at 1032 and <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">1043 </mtext><msup xmlns=""><mi mathvariant="normal">cm</mi><mrow><mtext>−1</mtext></mrow></msup></math> in neutron irradiated silicon

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Structure and distribution of secondary defects in high energy ion implanted 4H-SiC

Toshiyuki Ohno; Naoto Kobayashi

J. Appl. Phys. 89, 933–941 (2001) https://doi.org/10.1063/1.1331333

Abstract

View articletitled, Structure and distribution of secondary defects in high energy ion implanted 4H-SiC

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Modeling laser texturing of silicate glass

Ted D. Bennett; Lei Li

J. Appl. Phys. 89, 942–950 (2001) https://doi.org/10.1063/1.1330550

Abstract

View articletitled, Modeling laser texturing of silicate glass

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Combined electron diffraction/microanalysis investigation of crystallography and cation distributions in the transparent conductive oxide ${Cd}_{1+x} {In}_{2−2x} {Sn}_{x} O_{4}$

L. N. Brewer; D. R. Kammler; T. O. Mason; V. P. Dravid

J. Appl. Phys. 89, 951–954 (2001) https://doi.org/10.1063/1.1340736

Abstract

View articletitled, Combined electron diffraction/microanalysis investigation of crystallography and cation distributions in the transparent conductive oxide <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mtext>1+x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>2−2x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sn</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math>

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Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates

Patricia J. Macfarlane; M. E. Zvanut; Gregg M. Janowski

J. Appl. Phys. 89, 955–959 (2001) https://doi.org/10.1063/1.1333741

Abstract

View articletitled, Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates

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Mechanism of liquid crystal alignment on submicron patterned surfaces

A. Rastegar; M. Škarabot; B. Blij; Th. Rasing

J. Appl. Phys. 89, 960–964 (2001) https://doi.org/10.1063/1.1335649

Abstract

View articletitled, Mechanism of liquid crystal alignment on submicron patterned surfaces

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Raman investigation of ion beam synthesized $β- {FeSi}_{2}$

A. G. Birdwell; R. Glosser; D. N. Leong; K. P. Homewood

J. Appl. Phys. 89, 965–972 (2001) https://doi.org/10.1063/1.1326473

Abstract

View articletitled, Raman investigation of ion beam synthesized <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">β-</mi><msub xmlns=""><mi mathvariant="normal">FeSi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Energy relaxation by hot electrons in $n- GaN$ epilayers

N. M. Stanton; A. J. Kent; A. V. Akimov; P. Hawker; T. S. Cheng; C. T. Foxon

J. Appl. Phys. 89, 973–979 (2001) https://doi.org/10.1063/1.1334642

Abstract

View articletitled, Energy relaxation by hot electrons in <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math> epilayers

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Studies of boron diffusivity in strained ${Si}_{1−x} {Ge}_{x}$ epitaxial layers

K. Rajendran; W. Schoenmaker

J. Appl. Phys. 89, 980–987 (2001) https://doi.org/10.1063/1.1332803

Abstract

View articletitled, Studies of boron diffusivity in strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> epitaxial layers

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Interdiffusion of CdS/CdTe thin films: Modeling x-ray diffraction line profiles

Brian E. McCandless; Michael G. Engelmann; Robert W. Birkmire

J. Appl. Phys. 89, 988–994 (2001) https://doi.org/10.1063/1.1330245

Abstract

View articletitled, Interdiffusion of CdS/CdTe thin films: Modeling x-ray diffraction line profiles

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Formation mechanism of interfacial Si–oxide layers during postannealing of ${Ta}_{2} O_{5} /Si$

Haruhiko Ono; Yumiko Hosokawa; Taeko Ikarashi; Keisuke Shinoda; Nobuyuki Ikarashi; Ken-ichi Koyanagi; Hiromu Yamaguchi

J. Appl. Phys. 89, 995–1002 (2001) https://doi.org/10.1063/1.1334922

Abstract

View articletitled, Formation mechanism of interfacial Si–oxide layers during postannealing of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math>

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Ar dilution effects on the elastic properties of hydrogenated amorphous hard-carbon films grown by plasma-enhanced chemical vapor deposition

L. Valentini; J. M. Kenny; G. Carlotti; G. Socino; L. Lozzi; S. Santucci

J. Appl. Phys. 89, 1003–1007 (2001) https://doi.org/10.1063/1.1330762

Abstract

View articletitled, Ar dilution effects on the elastic properties of hydrogenated amorphous hard-carbon films grown by plasma-enhanced chemical vapor deposition

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Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

T. I. Kamins; R. Stanley Williams; D. P. Basile; T. Hesjedal; J. S. Harris

J. Appl. Phys. 89, 1008–1016 (2001) https://doi.org/10.1063/1.1335640

Abstract

View articletitled, Ti-catalyzed Si nanowires by chemical vapor deposition: Microscopy and growth mechanisms

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Interface of directly bonded GaAs and InP

N. Y. Jin-Phillipp; W. Sigle; A. Black; D. Babic; J. E. Bowers; E. L. Hu; M. Rühle

J. Appl. Phys. 89, 1017–1024 (2001) https://doi.org/10.1063/1.1331068

Abstract

View articletitled, Interface of directly bonded GaAs and InP

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Cracking of GaN films

E. V. Etzkorn; D. R. Clarke

J. Appl. Phys. 89, 1025–1034 (2001) https://doi.org/10.1063/1.1330243

Abstract

View articletitled, Cracking of GaN films

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Epitaxial growth of ${CrO}_{2}$ thin films by chemical-vapor deposition from a ${Cr}_{8} O_{21}$ precursor

P. G. Ivanov; S. M. Watts; D. M. Lind

J. Appl. Phys. 89, 1035–1040 (2001) https://doi.org/10.1063/1.1331343

Abstract

View articletitled, Epitaxial growth of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin films by chemical-vapor deposition from a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cr</mi><mrow><mi mathvariant="normal">8</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">21</mi></mrow></msub></math> precursor

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1.4 μm band emission properties of ${Tm}^{3+}$ ions in transparent glass ceramics containing ${PbF}_{2}$ nanocrystals for $S$ -band amplifier

Hideaki Hayashi; Setsuhisa Tanabe; Teiichi Hanada

J. Appl. Phys. 89, 1041–1045 (2001) https://doi.org/10.1063/1.1335645

Abstract

View articletitled, 1.4 μm band emission properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Tm</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> ions in transparent glass ceramics containing <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">PbF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> nanocrystals for <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">S</mi></math>-band amplifier

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Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

H. Jiang; G. Y. Zhao; H. Ishikawa; T. Egawa; T. Jimbo; M. Umeno

J. Appl. Phys. 89, 1046–1052 (2001) https://doi.org/10.1063/1.1334923

Abstract

View articletitled, Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement

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Nature of non-D and non-G bands in Raman spectra of a-C:H(N) films grown by reactive sputtering

G. Messina; A. Paoletti; S. Santangelo; A. Tagliaferro; A. Tucciarone

J. Appl. Phys. 89, 1053–1058 (2001) https://doi.org/10.1063/1.1334371

Abstract

View articletitled, Nature of non-D and non-G bands in Raman spectra of a-C:H(N) films grown by reactive sputtering

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Photoluminescence and structural characteristics of CdS nanoclusters synthesized by hydrothermal microemulsion

Bing Liu; G. Q. Xu; L. M. Gan; C. H. Chew; W. S. Li; Z. X. Shen

J. Appl. Phys. 89, 1059–1063 (2001) https://doi.org/10.1063/1.1335642

Abstract

View articletitled, Photoluminescence and structural characteristics of CdS nanoclusters synthesized by hydrothermal microemulsion

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Photoluminescence study of InGaAs/AlAsSb heterostructure

Nikolai Georgiev; Teruo Mozume

J. Appl. Phys. 89, 1064–1069 (2001) https://doi.org/10.1063/1.1332797

Abstract

View articletitled, Photoluminescence study of InGaAs/AlAsSb heterostructure

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Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

A. Bell; I. Harrison; D. Korakakis; E. C. Larkins; J. M. Hayes; M. Kuball; N. Grandjean; J. Massies

J. Appl. Phys. 89, 1070–1074 (2001) https://doi.org/10.1063/1.1327288

Abstract

View articletitled, Photoluminescence spectroscopy on annealed molecular beam epitaxy grown GaN

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Theoretical analysis of interband optical absorption in an external electric field

P. K. Chakraborty; K. P. Ghatak

J. Appl. Phys. 89, 1075–1081 (2001) https://doi.org/10.1063/1.1330253

Abstract

View articletitled, Theoretical analysis of interband optical absorption in an external electric field

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Direct interband transitions in tris-(8-hydroxyquinoline) aluminum thin films

X. L. Xu; Z. Xu; Y. B. Hou; X. H. Chen; Z. J. Wang; X. Q. Zhang; X. R. Xu; S. P. Lau; B. K. Tay

J. Appl. Phys. 89, 1082–1086 (2001) https://doi.org/10.1063/1.1334635

Abstract

View articletitled, Direct interband transitions in tris-(8-hydroxyquinoline) aluminum thin films

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Quantum theory of infrared detectors based on intrasubband transitions in III–V quantum wells

W. E. Hagston; T. Stirner; F. Rasul

J. Appl. Phys. 89, 1087–1100 (2001) https://doi.org/10.1063/1.1333032

Abstract

View articletitled, Quantum theory of infrared detectors based on intrasubband transitions in III–V quantum wells

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Nonspecular x-ray reflectivity study of roughness scaling in Si/Mo multilayers

J. M. Freitag; B. M. Clemens

J. Appl. Phys. 89, 1101–1107 (2001) https://doi.org/10.1063/1.1332095

Abstract

View articletitled, Nonspecular x-ray reflectivity study of roughness scaling in Si/Mo multilayers

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Improved refractive index formulas for the ${Al}_{x} {Ga}_{1−x} N$ and ${In}_{y} {Ga}_{1−y} N$ alloys

G. M. Laws; E. C. Larkins; I. Harrison; C. Molloy; D. Somerford

J. Appl. Phys. 89, 1108–1115 (2001) https://doi.org/10.1063/1.1320007

Abstract

View articletitled, Improved refractive index formulas for the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−y</mtext></mrow></msub><mi mathvariant="normal" xmlns="">N</mi></math> alloys

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Strain state in GaN epilayers from optical experiments

E. Deleporte; C. Guénaud; M. Voos; B. Beaumont; P. Gibart

J. Appl. Phys. 89, 1116–1119 (2001) https://doi.org/10.1063/1.1329144

Abstract

View articletitled, Strain state in GaN epilayers from optical experiments

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Crystal field, phonon coupling and emission shift of ${Mn}^{2+}$ in ZnS:Mn nanoparticles

Wei Chen; Ramaswami Sammynaiken; Yining Huang; Jan-Olle Malm; Reine Wallenberg; Jan-Olov Bovin; Valéry Zwiller; Nicholas A. Kotov

J. Appl. Phys. 89, 1120–1129 (2001) https://doi.org/10.1063/1.1332795

Abstract

View articletitled, Crystal field, phonon coupling and emission shift of <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">2+</mi></mrow></msup></math> in ZnS:Mn nanoparticles

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Optical characterization of wide band gap amorphous semiconductors $(a- Si:C:H):$ Effect of hydrogen dilution

Minseo Park; C. W. Teng; V. Sakhrani; M. B. McLaurin; R. M. Kolbas; R. C. Sanwald; R. J. Nemanich; J. J. Hren; J. J. Cuomo

J. Appl. Phys. 89, 1130–1137 (2001) https://doi.org/10.1063/1.1332421

Abstract

View articletitled, Optical characterization of wide band gap amorphous semiconductors <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(a-</mi><mi mathvariant="normal" xmlns="">Si:C:H</mi><mi xmlns="">):</mi></math> Effect of hydrogen dilution

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Near-field and far-field optical properties of thin metallic films

B. Dumay; N. Richard; T. David; E. Bourillot; F. Scheurer; E. Beaurepaire; A. Dereux; Y. Lacroute

J. Appl. Phys. 89, 1138–1144 (2001) https://doi.org/10.1063/1.1330251

Abstract

View articletitled, Near-field and far-field optical properties of thin metallic films

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B/Si multilayers for soft x-ray and extreme ultraviolet optics

M. F. Ravet; F. Bridou; A. Raynal; B. Pardo; J. P. Chauvineau; J.-M. André

J. Appl. Phys. 89, 1145–1150 (2001) https://doi.org/10.1063/1.1322590

Abstract

View articletitled, B/Si multilayers for soft x-ray and extreme ultraviolet optics

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Influence of deep level impurities on modulation response of InGaP light emitting diodes

M. Guina; J. Dekker; A. Tukiainen; S. Orsila; M. Saarinen; M. Dumitrescu; P. Sipilä; P. Savolainen; M. Pessa

J. Appl. Phys. 89, 1151–1155 (2001) https://doi.org/10.1063/1.1332091

Abstract

View articletitled, Influence of deep level impurities on modulation response of InGaP light emitting diodes

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Screening and strain effects on the ground-state energy of a quasi-two-dimensional quantum well system

Tzuen-Rong Yang; Mi-Ra Kim

J. Appl. Phys. 89, 1156–1160 (2001) https://doi.org/10.1063/1.1332420

Abstract

View articletitled, Screening and strain effects on the ground-state energy of a quasi-two-dimensional quantum well system

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Monte Carlo simulation of the generation of terahertz radiation in GaN

E. Starikov; P. Shiktorov; V. Gružinskis; L. Reggiani; L. Varani; J. C. Vaissière; Jian H. Zhao

J. Appl. Phys. 89, 1161–1171 (2001) https://doi.org/10.1063/1.1334924

Abstract

View articletitled, Monte Carlo simulation of the generation of terahertz radiation in GaN

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Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

V. V. Ilchenko; S. D. Lin; C. P. Lee; O. V. Tretyak

J. Appl. Phys. 89, 1172–1174 (2001) https://doi.org/10.1063/1.1336519

Abstract

View articletitled, Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

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Blocking of resonant tunneling by electron Bragg reflectors in ${GaAs/Al}_{x} {Ga}_{1−x} As$ quantum well structures

Seung-Chang Lee; Kevin J. Malloy

J. Appl. Phys. 89, 1175–1179 (2001) https://doi.org/10.1063/1.1332094

Abstract

View articletitled, Blocking of resonant tunneling by electron Bragg reflectors in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> quantum well structures

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Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission

J. Feldmann; S. T. Cundiff; M. Arzberger; G. Böhm; G. Abstreiter

J. Appl. Phys. 89, 1180–1183 (2001) https://doi.org/10.1063/1.1333718

Abstract

View articletitled, Carrier capture into InAs/GaAs quantum dots via multiple optical phonon emission

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Electrical and optical properties of ${CN}_{x} (0⩽x⩽0.25)$ films deposited by reactive magnetron sputtering

E. Broitman; N. Hellgren; K. Järrendahl; M. P. Johansson; S. Olafsson; G. Radnóczi; J.-E. Sundgren; L. Hultman

J. Appl. Phys. 89, 1184–1190 (2001) https://doi.org/10.1063/1.1334370

Abstract

View articletitled, Electrical and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub><mtext xmlns="">(0⩽x⩽0.25)</mtext></math> films deposited by reactive magnetron sputtering

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Strain profiles in pyramidal quantum dots by means of atomistic simulation

Y. Kikuchi; H. Sugii; K. Shintani

J. Appl. Phys. 89, 1191–1196 (2001) https://doi.org/10.1063/1.1335822

Abstract

View articletitled, Strain profiles in pyramidal quantum dots by means of atomistic simulation

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Piezoelectric-field effect on electronic and optical properties of [111] ${In}_{x} {Ga}_{1−x} As/GaAs$ superlattices

B. W. Kim

J. Appl. Phys. 89, 1197–1204 (2001) https://doi.org/10.1063/1.1331335

Abstract

View articletitled, Piezoelectric-field effect on electronic and optical properties of [111] <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As/GaAs</mi></math> superlattices

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Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability

M. V. Fischetti; S. E. Laux

J. Appl. Phys. 89, 1205–1231 (2001) https://doi.org/10.1063/1.1332423

Abstract

View articletitled, Long-range Coulomb interactions in small Si devices. Part I: Performance and reliability

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Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

M. V. Fischetti

J. Appl. Phys. 89, 1232–1250 (2001) https://doi.org/10.1063/1.1332424

Abstract

View articletitled, Long-range Coulomb interactions in small Si devices. Part II. Effective electron mobility in thin-oxide structures

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High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction

S. Contreras; W. Knap; E. Frayssinet; M. L. Sadowski; M. Goiran; M. Shur

J. Appl. Phys. 89, 1251–1255 (2001) https://doi.org/10.1063/1.1328788

Abstract

View articletitled, High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostructure: Mechanisms of parallel conduction

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Effect of nanometer-scale corrugation on densities of gap states and fixed charges at the thermally grown ${SiO}_{2} / Si$ interface

Yasuhiko Ishikawa; Masaaki Kosugi; Michiharu Tabe

J. Appl. Phys. 89, 1256–1261 (2001) https://doi.org/10.1063/1.1335641

Abstract

View articletitled, Effect of nanometer-scale corrugation on densities of gap states and fixed charges at the thermally grown <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">/</mi><mi mathvariant="normal" xmlns="">Si</mi></math> interface

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Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects

Y. T. Tan; Z. A. K. Durrani; H. Ahmed

J. Appl. Phys. 89, 1262–1270 (2001) https://doi.org/10.1063/1.1331338

Abstract

View articletitled, Electrical and structural properties of solid phase crystallized polycrystalline silicon and their correlation to single-electron effects

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Enhancement of the low-field magnetoresistance of ${La}_{1−x−y} {Ca}_{x} {Sr}_{y} {MnO}_{3+d}$ at room temperature

S. Kolesnik; B. Dabrowski; Z. Bukowski; J. Mais

J. Appl. Phys. 89, 1271–1274 (2001) https://doi.org/10.1063/1.1328060

Abstract

View articletitled, Enhancement of the low-field magnetoresistance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>y</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mtext>3+d</mtext></mrow></msub></math> at room temperature

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Domain size determination of granular ferromagnetic systems with neutron depolarization

S. G. E. te Velthuis; N. H. van Dijk; M. Th. Rekveldt; J. Sietsma; S. van der Zwaag

J. Appl. Phys. 89, 1275–1280 (2001) https://doi.org/10.1063/1.1332090

Abstract

View articletitled, Domain size determination of granular ferromagnetic systems with neutron depolarization

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Domain cooperation in ferromagnetic hysteresis

Carl S. Schneider

J. Appl. Phys. 89, 1281–1286 (2001) https://doi.org/10.1063/1.1331657

Abstract

View articletitled, Domain cooperation in ferromagnetic hysteresis

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Calculated magnetic properties of two-dimensional arrays of nanoparticles at vanishing temperature

V. Russier

J. Appl. Phys. 89, 1287–1294 (2001) https://doi.org/10.1063/1.1333034

Abstract

View articletitled, Calculated magnetic properties of two-dimensional arrays of nanoparticles at vanishing temperature

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Model for discontinuous actuation of ferromagnetic shape memory alloy under stress

S. J. Murray; R. C. O’Handley; S. M. Allen

J. Appl. Phys. 89, 1295–1301 (2001) https://doi.org/10.1063/1.1285867

Abstract

View articletitled, Model for discontinuous actuation of ferromagnetic shape memory alloy under stress

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Growth of epitaxial ${111} {Ni}_{0.82} {Fe}_{0.18} O$ and the exchange anisotropy of ${Ni}_{0.82} {Fe}_{0.18} {O/Ni}_{80} {Fe}_{20}$

Chih-Huang Lai; Wei-Chih Lien; Robert L. White

J. Appl. Phys. 89, 1302–1309 (2001) https://doi.org/10.1063/1.1331652

Abstract

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Micromagnetic behavior of conical ferromagnetic particles

C. A. Ross; M. Farhoud; M. Hwang; Henry I. Smith; M. Redjdal; F. B. Humphrey

J. Appl. Phys. 89, 1310–1319 (2001) https://doi.org/10.1063/1.1331656

Abstract

View articletitled, Micromagnetic behavior of conical ferromagnetic particles

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Thermal relaxation of the free layer anisotropy in spin valves

Lydia Baril; Daniele Mauri; Jeffery McCord; Savas Gider; Tsann Lin

J. Appl. Phys. 89, 1320–1324 (2001) https://doi.org/10.1063/1.1329664

Abstract

View articletitled, Thermal relaxation of the free layer anisotropy in spin valves

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Effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity

Y.-P. Zhao; R. M. Gamache; G.-C. Wang; T.-M. Lu; G. Palasantzas; J. Th. M. De Hosson

J. Appl. Phys. 89, 1325–1330 (2001) https://doi.org/10.1063/1.1331065

Abstract

View articletitled, Effect of surface roughness on magnetic domain wall thickness, domain size, and coercivity

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Spin-state transition in ${La}_{1−x} {Sm}_{x} {CoO}_{3}$ perovskites

J. R. Sun; R. W. Li; B. G. Shen

J. Appl. Phys. 89, 1331–1335 (2001) https://doi.org/10.1063/1.1336521

Abstract

View articletitled, Spin-state transition in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sm</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">CoO</mi><mrow><mn>3</mn></mrow></msub></math> perovskites

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films

F. Xu; S. Trolier-McKinstry; W. Ren; Baomin Xu; Z.-L. Xie; K. J. Hemker

J. Appl. Phys. 89, 1336–1348 (2001) https://doi.org/10.1063/1.1325005

Abstract

View articletitled, Domain wall motion and its contribution to the dielectric and piezoelectric properties of lead zirconate titanate films

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Nuclear magnetic resonance study of the relaxor ferroelectric $Pb ({Sc}_{1/2} {Nb}_{1/2}) O_{3}$

R. Blinc; A. Gregorovič; B. Zalar; R. Pirc; V. V. Laguta; M. D. Glinchuk

J. Appl. Phys. 89, 1349–1354 (2001) https://doi.org/10.1063/1.1326897

Abstract

View articletitled, Nuclear magnetic resonance study of the relaxor ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Pb</mi><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Sc</mi><mrow><mtext>1/2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mtext>1/2</mtext></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math>

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Effect of finite domain-wall width on the domain structures of epitaxial ferroelectric and ferroelastic thin films

A. Yu. Emelyanov; N. A. Pertsev; E. K. H. Salje

J. Appl. Phys. 89, 1355–1366 (2001) https://doi.org/10.1063/1.1332086

Abstract

View articletitled, Effect of finite domain-wall width on the domain structures of epitaxial ferroelectric and ferroelastic thin films

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Effects of prepoling and polarization on photoemission from ferroelectric ceramics

I. Boscolo; S. Cialdi; F. Tazzioli; L. Catani; L. Giannessi

J. Appl. Phys. 89, 1367–1370 (2001) https://doi.org/10.1063/1.1324684

Abstract

View articletitled, Effects of prepoling and polarization on photoemission from ferroelectric ceramics

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Optimal bounds on field fluctuations for random composites: Three dimensional problems

Robert Lipton

J. Appl. Phys. 89, 1371–1376 (2001) https://doi.org/10.1063/1.1332798

Abstract

View articletitled, Optimal bounds on field fluctuations for random composites: Three dimensional problems

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Principle of ferroelectric domain imaging using atomic force microscope

Seungbum Hong; Jungwon Woo; Hyunjung Shin; Jong Up Jeon; Y. Eugene Pak; Enrico L. Colla; Nava Setter; Eunah Kim; Kwangsoo No

J. Appl. Phys. 89, 1377–1386 (2001) https://doi.org/10.1063/1.1331654

Abstract

View articletitled, Principle of ferroelectric domain imaging using atomic force microscope

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Probing domain microstructure in ferroelectric ${Bi}_{4} {Ti}_{3} O_{12}$ thin films by optical second harmonic generation

Yaniv Barad; James Lettieri; Chris D. Theis; Darrell G. Schlom; Venkatraman Gopalan; J. C. Jiang; X. Q. Pan

J. Appl. Phys. 89, 1387–1392 (2001) https://doi.org/10.1063/1.1334641

Abstract

View articletitled, Probing domain microstructure in ferroelectric <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mn>3</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>12</mn></mrow></msub></math> thin films by optical second harmonic generation

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Electromechanical properties and self-polarization in relaxor ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3}$ thin films

Zian Kighelman; Dragan Damjanovic; Nava Setter

J. Appl. Phys. 89, 1393–1401 (2001) https://doi.org/10.1063/1.1331339

Abstract

View articletitled, Electromechanical properties and self-polarization in relaxor <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Mg</mi><mrow><mi mathvariant="normal">1/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi mathvariant="normal">2/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Significant improvement of electrical and thermal properties of low dielectric constant plasma polymerized paraxylene thin films by postdeposition $H_{2} + He$ plasma treatment

Yong Chun Quan; Sanghak Yeo; Cheonman Shim; Jaeyoung Yang; Donggeun Jung

J. Appl. Phys. 89, 1402–1404 (2001) https://doi.org/10.1063/1.1335826

Abstract

View articletitled, Significant improvement of electrical and thermal properties of low dielectric constant plasma polymerized paraxylene thin films by postdeposition <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub><mi xmlns="">+</mi><mi mathvariant="normal" xmlns="">He</mi></math> plasma treatment

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DEVICE PHYSICS (PACS 85)

Electric bidirectional stress effects on metal–oxide–silicon capacitors

A. El-Hdiy; Dj. Ziane

J. Appl. Phys. 89, 1405–1410 (2001) https://doi.org/10.1063/1.1334368

Abstract

View articletitled, Electric bidirectional stress effects on metal–oxide–silicon capacitors

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Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

P. Kayasit; R. P. Joshi; N. E. Islam; E. Schamiloglu; J. Gaudet

J. Appl. Phys. 89, 1411–1417 (2001) https://doi.org/10.1063/1.1335824

Abstract

View articletitled, Transient and steady state simulations of internal temperature profiles in high-power semi-insulating GaAs photoconductive switches

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Cross-sectional electrostatic force microscopy of thin-film solar cells

C. Ballif; H. R. Moutinho; M. M. Al-Jassim

J. Appl. Phys. 89, 1418–1424 (2001) https://doi.org/10.1063/1.1329669

Abstract

View articletitled, Cross-sectional electrostatic force microscopy of thin-film solar cells

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Energy resolution of 12 eV at 5.9 keV from Al-superconducting tunnel junction detectors

G. Angloher; P. Hettl; M. Huber; J. Jochum; F. v. Feilitzsch; R. L. Mößbauer

J. Appl. Phys. 89, 1425–1429 (2001) https://doi.org/10.1063/1.1331332

Abstract

View articletitled, Energy resolution of 12 eV at 5.9 keV from Al-superconducting tunnel junction detectors

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition

Marco Marinelli; E. Milani; A. Paoletti; A. Tucciarone; G. Verona Rinati; M. Angelone; M. Pillon

J. Appl. Phys. 89, 1430–1435 (2001) https://doi.org/10.1063/1.1332805

Abstract

View articletitled, Systematic study of the normal and pumped state of high efficiency diamond particle detectors grown by chemical vapor deposition

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Particle “swarm” dynamics in triboelectric systems

Stephen J. Vinay; Myung S. Jhon

J. Appl. Phys. 89, 1436–1440 (2001) https://doi.org/10.1063/1.1332087

Abstract

View articletitled, Particle “swarm” dynamics in triboelectric systems

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Dielectrophoretic liquid actuation and nanodroplet formation

T. B. Jones; M. Gunji; M. Washizu; M. J. Feldman

J. Appl. Phys. 89, 1441–1448 (2001) https://doi.org/10.1063/1.1332799

Abstract

View articletitled, Dielectrophoretic liquid actuation and nanodroplet formation

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Ion-assisted deposition of ${MoS}_{x}$ films from laser-generated plume under pulsed electric field

V. Yu. Fominski; V. N. Nevolin; R. I. Romanov; I. Smurov

J. Appl. Phys. 89, 1449–1457 (2001) https://doi.org/10.1063/1.1330558

Abstract

View articletitled, Ion-assisted deposition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MoS</mi><mrow><mi>x</mi></mrow></msub></math> films from laser-generated plume under pulsed electric field

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Particle dynamics of debris produced during laser–plasma soft x-ray generation

T. Letardi; D. Lo; C.-E. Zheng

J. Appl. Phys. 89, 1458–1462 (2001) https://doi.org/10.1063/1.1334365

Abstract

View articletitled, Particle dynamics of debris produced during laser–plasma soft x-ray generation

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Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies

J. E. Gerbi; J. R. Abelson

J. Appl. Phys. 89, 1463–1469 (2001) https://doi.org/10.1063/1.1334639

Abstract

View articletitled, Deposition of microcrystalline silicon: Direct evidence for hydrogen-induced surface mobility of Si adspecies

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Material transport regimes and mechanisms for growth of molecular organic thin films using low-pressure organic vapor phase deposition

Max Shtein; Herman F. Gossenberger; Jay B. Benziger; Stephen R. Forrest

J. Appl. Phys. 89, 1470–1476 (2001) https://doi.org/10.1063/1.1332419

Abstract

View articletitled, Material transport regimes and mechanisms for growth of molecular organic thin films using low-pressure organic vapor phase deposition

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Self-propagating exothermic reactions between silicon and transition metals of groups IVA–VIA induced by mechanical alloying

Bing K. Yen

J. Appl. Phys. 89, 1477–1483 (2001) https://doi.org/10.1063/1.1333027

Abstract

View articletitled, Self-propagating exothermic reactions between silicon and transition metals of groups IVA–VIA induced by mechanical alloying

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Low temperature diamond growth using ${CO}_{2} {/CH}_{4}$ plasmas: Molecular beam mass spectrometry and computer simulation investigations

James R. Petherbridge; Paul W. May; Sean R. J. Pearce; Keith N. Rosser; Michael N. R. Ashfold

J. Appl. Phys. 89, 1484–1492 (2001) https://doi.org/10.1063/1.1333031

Abstract

View articletitled, Low temperature diamond growth using <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/CH</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> plasmas: Molecular beam mass spectrometry and computer simulation investigations

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Excimer laser destruction of micrometer size particles in a gas volume

B. Hopp; T. Smausz; A. Rácz; Zs. Bor

J. Appl. Phys. 89, 1493–1496 (2001) https://doi.org/10.1063/1.1334633

Abstract

View articletitled, Excimer laser destruction of micrometer size particles in a gas volume

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Simultaneous liquid viscosity and density determination with piezoelectric unimorph cantilevers

Wan Y. Shih; Xiaoping Li; Huiming Gu; Wei-Heng Shih; Ilhan A. Aksay

J. Appl. Phys. 89, 1497–1505 (2001) https://doi.org/10.1063/1.1287606

Abstract

View articletitled, Simultaneous liquid viscosity and density determination with piezoelectric unimorph cantilevers

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COMMUNICATIONS

Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

Hyunsoo Kim; Dong-Joon Kim; Seong-Ju Park; Hyunsang Hwang

J. Appl. Phys. 89, 1506–1508 (2001) https://doi.org/10.1063/1.1334631

Abstract

View articletitled, Effect of an oxidized Ni/Au p contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes

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Influence of ribbon thickness on the formation and magnetic properties of melt-spun Fe–Co–Nd–Dy–B metallic glasses

Wei Zhang; Akihisa Inoue

J. Appl. Phys. 89, 1509–1511 (2001) https://doi.org/10.1063/1.1335637

Abstract

View articletitled, Influence of ribbon thickness on the formation and magnetic properties of melt-spun Fe–Co–Nd–Dy–B metallic glasses

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Out-of-plane losses of two-dimensional photonic crystals waveguides: Electromagnetic analysis

Ph. Lalanne; H. Benisty

J. Appl. Phys. 89, 1512–1514 (2001) https://doi.org/10.1063/1.1331331

Abstract

View articletitled, Out-of-plane losses of two-dimensional photonic crystals waveguides: Electromagnetic analysis

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High-power electroabsorption modulator using intra-step-barrier quantum wells

Dong-Soo Shin; Paul K. L. Yu; S. A. Pappert

J. Appl. Phys. 89, 1515–1517 (2001) https://doi.org/10.1063/1.1333719

Abstract

View articletitled, High-power electroabsorption modulator using intra-step-barrier quantum wells

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Comment on “A general property of endoreversible thermal engines” [J. Appl. Phys. 81, 2973 (1997)]

Zijun Yan

J. Appl. Phys. 89, 1518–1519 (2001) https://doi.org/10.1063/1.1335618

Abstract

View articletitled, Comment on “A general property of endoreversible thermal engines” [J. Appl. Phys. 81, 2973 (1997)]

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Reply to “Comment on ‘A general property of endoreversible thermal engines’ ” [J. Appl. Phys. 89, 1518 (2001)]

F. Angulo-Brown; L. A. Arias-Hernández

J. Appl. Phys. 89, 1520–1521 (2001) https://doi.org/10.1063/1.1335619

Abstract

View articletitled, Reply to “Comment on ‘A general property of endoreversible thermal engines’ ” [J. Appl. Phys. 89, 1518 (2001)]

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ERRATA

Erratum: “Domain wall in ultrathin magnetic film: Internal structure and dynamics” [J. Appl. Phys. 88, 4783 (2000)]

V. L. Sobolev; S. V. Ivanova; H. L. Huang

J. Appl. Phys. 89, 1522 (2001) https://doi.org/10.1063/1.1338524

View articletitled, Erratum: “Domain wall in ultrathin magnetic film: Internal structure and dynamics” [J. Appl. Phys. 88, 4783 (2000)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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