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Volume 89, Issue 11

1 June 2001

ISSN 0021-8979

EISSN 1089-7550

In this Issue

APPLIED PHYSICS REVIEWS
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
DIELECTRICS AND FERROELECTRICITY (PACS 77)
NANOSCALE SCIENCE AND DESIGN
DEVICE PHYSICS (PACS 85)
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
COMMUNICATIONS
PROCEEDINGS OF THE 8TH JOINT MAGNETISM AND MAGNETIC MATERIALS-INTERMAG CONFERENCE
- Exchange Biasing: Dynamics and Structural Effects I
MANGANITES I
GROWTH OF MAGNETIC TUNNEL JUNCTIONS
SURFACE EFFECTS
SPIN DYNAMICS I
NUMERICAL METHODS
SPIN POLARIZED TUNNELING AND INJECTION IN SEMICONDUCTORS AND OXIDES
MAGNETIC MICROSCOPY AND IMAGING I
SPIN DYNAMICS II
MAGNETIC MULTILAYERS I
CHARGE CORRELATIONS IN FERROMAGNETIC CMR MANGANITES
SPIN TRANSPORT IN NANOTUBES AND NOVEL BARRIERS FOR MAGNETIC TUNNEL JUNCTIONS
ELECTRONIC STRUCTURE: METALS, HALF METALS, INSULATORS
EXCHANGE BIASING
NANO-OXIDE LAYERS AND SPECULAR SCATTERING IN SPIN VALVES
MANGANITE THIN FILMS
MICROMAGNETICS I
MAGNETIC SEMICONDUCTORS AND HETEROSTRUCTURES I
SPIN GLASSES AND FRUSTRATED SYSTEMS
MAGNETIC MULTILAYERS II
HIGH FREQUENCY PROBES IN MAGNETIC NANOSTRUCTURES
ELECTRON TRANSPORT IN SPIN VALVES
ULTRA THIN FILMS
MAGNETIC MICROSCOPY AND IMAGING II
CORRELATED ELECTRONS
ANISOTROPIC MAGNETORESISTANCE, MAGNETOIMPEDANCE, AND HALL EFFECT
MAGNETIC IMAGING III
PREISACH MODELS AND HYSTERESIS
EXCHANGE BIASING: DOMAINS AND AE STRUCTURE
MAGNETIC SEMICONDUCTORS AND HETEROSTRUCTURES II
GRANULAR AND CPP GMR AND SPIN-VALVE TRANSISTORS
ELECTRONIC STRUCTURE
CRITICAL PHENOMENA
TOWARD MAGNETIC TUNNEL DEVICES
STRUCTURAL CHARACTERIZATION OF MAGNETIC TUNNEL JUNCTIONS
THIN MAGNETIC FILMS
MANGANITES II
SYMPOSIUM ON SPIN TRANSPORT
MAGNETIZATION PROCESSES
SUPERCONDUCTIVITY I
EXCHANGE BIASING, DYNAMICS, AND STRUCTURAL EFFECTS II
FUNDAMENTALS OF MAGNETIC TUNNEL JUNCTIONS
MICROMAGNETICS II
MAGNETIC ASPECTS OF SPIN VALVES
CORRELATED ELECTRONS AND SPIN DYNAMICS
SUPERCONDUCTIVITY II
OTHER MAGNETORESISTIVE OXIDES

APPLIED PHYSICS REVIEWS

Band parameters for III–V compound semiconductors and their alloys

I. Vurgaftman; J. R. Meyer; L. R. Ram-Mohan

J. Appl. Phys. 89, 5815–5875 (2001) https://doi.org/10.1063/1.1368156

View articletitled, Band parameters for III–V compound semiconductors and their alloys

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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Analysis of the scattered light distribution of a tightly focused laser beam by a particle near a substrate

Wataru Inami; Yoshimasa Kawata

J. Appl. Phys. 89, 5876–5880 (2001) https://doi.org/10.1063/1.1365941

View articletitled, Analysis of the scattered light distribution of a tightly focused laser beam by a particle near a substrate

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Theory of space-charge field with a moving fringe in photorefractive polymers

Baohong Yuan; Xiudong Sun; Zhongxiang Zhou; Yan Li; Yongyuan Jiang; Chunfeng Hou

J. Appl. Phys. 89, 5881–5888 (2001) https://doi.org/10.1063/1.1367314

View articletitled, Theory of space-charge field with a moving fringe in photorefractive polymers

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Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry

S. Iwamoto; H. Kageshima; T. Yuasa; M. Nishioka; T. Someya; Y. Arakawa; K. Fukutani; T. Shimura; K. Kuroda

J. Appl. Phys. 89, 5889–5896 (2001) https://doi.org/10.1063/1.1370364

View articletitled, Photorefractive InGaAs/GaAs multiple quantum wells in the Franz–Keldysh geometry

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Determination of the emission zone in a single-layer polymer light-emitting diode through optical measurements

Thomas Granlund; Leif A. A. Pettersson; Olle Inganäs

J. Appl. Phys. 89, 5897–5902 (2001) https://doi.org/10.1063/1.1350998

View articletitled, Determination of the emission zone in a single-layer polymer light-emitting diode through optical measurements

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Electron density and recombination rate measurements in CO-seeded optically pumped plasmas

Peter Palm; Elke Plönjes; Matt Buoni; Vish V. Subramaniam; Igor V. Adamovich

J. Appl. Phys. 89, 5903–5910 (2001) https://doi.org/10.1063/1.1359754

View articletitled, Electron density and recombination rate measurements in CO-seeded optically pumped plasmas

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Radio frequency energy coupling to high-pressure optically pumped nonequilibrium plasmas

Elke Plönjes; Peter Palm; Wonchul Lee; Walter R. Lempert; Igor V. Adamovich

J. Appl. Phys. 89, 5911–5918 (2001) https://doi.org/10.1063/1.1359755

View articletitled, Radio frequency energy coupling to high-pressure optically pumped nonequilibrium plasmas

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Equilibrium and relaxation of particulate charge in fluorocarbon plasmas

K. N. Ostrikov; S. Kumar; H. Sugai

J. Appl. Phys. 89, 5919–5926 (2001) https://doi.org/10.1063/1.1368397

View articletitled, Equilibrium and relaxation of particulate charge in fluorocarbon plasmas

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Prebreakdown phenomena and formation process of the glow discharge in low-pressure Ar gas

Tatsuzo Hosokawa; Kazuhiro Goto; Mikio Ohuchi; Teruo Kaneda

J. Appl. Phys. 89, 5927–5931 (2001) https://doi.org/10.1063/1.1364653

View articletitled, Prebreakdown phenomena and formation process of the glow discharge in low-pressure Ar gas

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Semianalytical ion current model for radio-frequency driven collisionless sheaths

Deepak Bose; T. R. Govindan; M. Meyyappan

J. Appl. Phys. 89, 5932–5938 (2001) https://doi.org/10.1063/1.1365436

View articletitled, Semianalytical ion current model for radio-frequency driven collisionless sheaths

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Large-scale well aligned carbon nitride nanotube films: Low temperature growth and electron field emission

Dingyong Zhong; Shuang Liu; Guangyu Zhang; E. G. Wang

J. Appl. Phys. 89, 5939–5943 (2001) https://doi.org/10.1063/1.1370114

View articletitled, Large-scale well aligned carbon nitride nanotube films: Low temperature growth and electron field emission

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Influence of substrate structure on the growth of CdTe thin films

Y. Yan; R. G. Dhere; K. M. Jones; M. M. Al-Jassim

J. Appl. Phys. 89, 5944–5948 (2001) https://doi.org/10.1063/1.1367406

View articletitled, Influence of substrate structure on the growth of CdTe thin films

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Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering

J. Takahashi; K. Kawakami; K. Nakai

J. Appl. Phys. 89, 5949–5960 (2001) https://doi.org/10.1063/1.1368176

View articletitled, Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering

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Effect of C and B sequential implantation on the B acceptors in $4H–SiC$

Yoshitaka Nakano; Rajesh Kumar Malhan; Tetsu Kachi; Hiroshi Tadano

J. Appl. Phys. 89, 5961–5964 (2001) https://doi.org/10.1063/1.1359426

View articletitled, Effect of C and B sequential implantation on the B acceptors in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">4H–SiC</mi></math></span>

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Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon

V. V. Voronkov; R. Falster

J. Appl. Phys. 89, 5965–5971 (2001) https://doi.org/10.1063/1.1342806

View articletitled, Strain-induced transformation of amorphous spherical precipitates into platelets: Application to oxide particles in silicon

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Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

M. K. Hudait; S. B. Krupanidhi

J. Appl. Phys. 89, 5972–5979 (2001) https://doi.org/10.1063/1.1368870

View articletitled, Self-annihilation of antiphase boundaries in GaAs epilayers on Ge substrates grown by metal-organic vapor-phase epitaxy

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Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation

T. Höchbauer; A. Misra; M. Nastasi; J. W. Mayer

J. Appl. Phys. 89, 5980–5990 (2001) https://doi.org/10.1063/1.1353561

View articletitled, Investigation of the cut location in hydrogen implantation induced silicon surface layer exfoliation

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Charge states of divacancies in self-implanted doped Si

S. Szpala; P. J. Simpson

J. Appl. Phys. 89, 5991–5996 (2001) https://doi.org/10.1063/1.1363682

View articletitled, Charge states of divacancies in self-implanted doped Si

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Oxygen recoil implant from ${SiO}_{2}$ layers into single-crystalline silicon

G. Wang; Y. Chen; D. Li; S. Oak; G. Srivastav; S. Banerjee; A. Tasch; P. Merrill; R. Bleiler

J. Appl. Phys. 89, 5997–6001 (2001) https://doi.org/10.1063/1.1355699

View articletitled, Oxygen recoil implant from <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> layers into single-crystalline silicon

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Weak hyperfine interaction of $E^{'}$ centers in gamma and beta irradiated silica

S. Agnello; R. Boscaino; F. M. Gelardi; B. Boizot

J. Appl. Phys. 89, 6002–6006 (2001) https://doi.org/10.1063/1.1369398

View articletitled, Weak hyperfine interaction of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>E</mi><mrow><mi>′</mi></mrow></msup></math></span> centers in gamma and beta irradiated silica

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Influence of alpha particle bombardment and postannealing on photoluminescence from ${GaAs/Al}_{0.35} {Ga}_{0.65} As$ multiple quantum wells

J. Kundrotas; A. Dargys; G. Valušis; S. Ašmontas; K. Köhler; C. Leroy

J. Appl. Phys. 89, 6007–6012 (2001) https://doi.org/10.1063/1.1356434

View articletitled, Influence of alpha particle bombardment and postannealing on photoluminescence from <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">GaAs/Al</mi><mrow><mi mathvariant="normal">0.35</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.65</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> multiple quantum wells

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Modeling of hydrophilic wafer bonding by molecular dynamics simulations

David A. Litton; Stephen H. Garofalini

J. Appl. Phys. 89, 6013–6023 (2001) https://doi.org/10.1063/1.1351538

View articletitled, Modeling of hydrophilic wafer bonding by molecular dynamics simulations

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Minimization of energy input to fluids for rock-fracturing experiments

P. Doiphode; S. Chaturvedi

J. Appl. Phys. 89, 6024–6032 (2001) https://doi.org/10.1063/1.1366659

View articletitled, Minimization of energy input to fluids for rock-fracturing experiments

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Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

Yves Lacroix; Sung-Hoon Chung; Shiro Sakai

J. Appl. Phys. 89, 6033–6036 (2001) https://doi.org/10.1063/1.1368394

View articletitled, Cracking of GaN on sapphire from etch-process-induced nonuniformity in residual thermal stress

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Effects of core size and shell thickness on phonon modes in GaAs/AlAs shell quantum dots

G. Qin; Shang-Fen Ren

J. Appl. Phys. 89, 6037–6043 (2001) https://doi.org/10.1063/1.1368392

View articletitled, Effects of core size and shell thickness on phonon modes in GaAs/AlAs shell quantum dots

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Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots

T. Surkova; A. Patanè; L. Eaves; P. C. Main; M. Henini; A. Polimeni; A. P. Knights; C. Jeynes

J. Appl. Phys. 89, 6044–6047 (2001) https://doi.org/10.1063/1.1369397

View articletitled, Indium interdiffusion in annealed and implanted InAs/(AlGa)As self-assembled quantum dots

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Oxidation and phase transitions of epitaxial tin oxide thin films on $(1̄012)$ sapphire

X. Q. Pan; L. Fu

J. Appl. Phys. 89, 6048–6055 (2001) https://doi.org/10.1063/1.1368865

View articletitled, Oxidation and phase transitions of epitaxial tin oxide thin films on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(1̄012)</mtext></math></span> sapphire

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Structure–property relationship of nanocrystalline tin dioxide thin films grown on $(1̄012)$ sapphire

X. Q. Pan; L. Fu; J. E. Dominguez

J. Appl. Phys. 89, 6056–6061 (2001) https://doi.org/10.1063/1.1368866

View articletitled, Structure–property relationship of nanocrystalline tin dioxide thin films grown on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(1̄012)</mtext></math></span> sapphire

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Transitions in morphology observed in nitrogen/methane–hydrogen depositions of polycrystalline diamond films

V. M. Ayres; M. Farhan; D. Spach; J. Bobbitt; J. Abdul Majeed; B. F. Wright; B. L. Wright; J. Asmussen; M. G. Kanatzidis; T. R. Bieler

J. Appl. Phys. 89, 6062–6068 (2001) https://doi.org/10.1063/1.1362406

View articletitled, Transitions in morphology observed in nitrogen/methane–hydrogen depositions of polycrystalline diamond films

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Dislocation dynamics of strain relaxation in epitaxial layers

T. C. Wang; Y. W. Zhang; S. J. Chua

J. Appl. Phys. 89, 6069–6072 (2001) https://doi.org/10.1063/1.1369396

View articletitled, Dislocation dynamics of strain relaxation in epitaxial layers

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Presence of oxygen in the lattice of CdTe thin films

A. Picos-Vega; H. Arizpe-Chávez; O. Zelaya-Angel; R. Ramı́rez-Bon; F. J. Espinoza-Beltrán

J. Appl. Phys. 89, 6073–6078 (2001) https://doi.org/10.1063/1.1342025

View articletitled, Presence of oxygen in the lattice of CdTe thin films

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Initial reactions in Ti–Si bilayers: New indications from in situ measurements

R. Cocchi; D. Giubertoni; G. Ottaviani; T. Marangon; G. Mastracchio; G. Queirolo; A. Sabbadini

J. Appl. Phys. 89, 6079–6084 (2001) https://doi.org/10.1063/1.1352556

View articletitled, Initial reactions in Ti–Si bilayers: New indications from <em>in situ</em> measurements

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Surface evolution of polycrystalline Al films deposited on amorphous substrates at elevated temperatures

C. Eisenmenger-Sittner

J. Appl. Phys. 89, 6085–6091 (2001) https://doi.org/10.1063/1.1368864

View articletitled, Surface evolution of polycrystalline Al films deposited on amorphous substrates at elevated temperatures

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High-resolution x-ray study of thin GaN film on SiC

A. Kazimirov; N. Faleev; H. Temkin; M. J. Bedzyk; V. Dmitriev; Yu. Melnik

J. Appl. Phys. 89, 6092–6097 (2001) https://doi.org/10.1063/1.1364644

View articletitled, High-resolution x-ray study of thin GaN film on SiC

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Magnetization reversal and coercivity of magnetic-force microscopy tips

A. Carl; J. Lohau; S. Kirsch; E. F. Wassermann

J. Appl. Phys. 89, 6098–6104 (2001) https://doi.org/10.1063/1.1368872

View articletitled, Magnetization reversal and coercivity of magnetic-force microscopy tips

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Chemical vapor deposition and deep level analyses of $4H-SiC(112̄0)$

Tsunenobu Kimoto; Toshiyuki Yamamoto; Zhi Ying Chen; Hiroshi Yano; Hiroyuki Matsunami

J. Appl. Phys. 89, 6105–6109 (2001) https://doi.org/10.1063/1.1368863

View articletitled, Chemical vapor deposition and deep level analyses of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">4H-SiC(112̄0)</mi></math></span>

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Growth kinetics of amorphous interlayers in Ti thin films on epitaxial Si–Ge layers on silicon and germanium

J. B. Lai; L. J. Chen

J. Appl. Phys. 89, 6110–6115 (2001) https://doi.org/10.1063/1.1365439

View articletitled, Growth kinetics of amorphous interlayers in Ti thin films on epitaxial Si–Ge layers on silicon and germanium

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Full-field optical measurement of curvatures in ultra-thin-film–substrate systems in the range of geometrically nonlinear deformations

Hansuk Lee; Ares J. Rosakis; L. B. Freund

J. Appl. Phys. 89, 6116–6129 (2001) https://doi.org/10.1063/1.1364650

View articletitled, Full-field optical measurement of curvatures in ultra-thin-film–substrate systems in the range of geometrically nonlinear deformations

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Mound surface roughness effects on the thermal capacitance of thin films

G. Palasantzas; J. Th. M. De Hosson

J. Appl. Phys. 89, 6130–6134 (2001) https://doi.org/10.1063/1.1368390

View articletitled, Mound surface roughness effects on the thermal capacitance of thin films

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Variations of the infrared transmission properties with the metal–insulator transition in thin films of the yttrium-hydride system

M. W. Lee; C. Y. Kuo; H. C. Lin; H. C. Wang

J. Appl. Phys. 89, 6135–6138 (2001) https://doi.org/10.1063/1.1367879

View articletitled, Variations of the infrared transmission properties with the metal–insulator transition in thin films of the yttrium-hydride system

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Micro-optical nonlinearity of a silver oxide layer

Toshio Fukaya; Dorothea Büchel; Shunichiro Shinbori; Junji Tominaga; Nobufumi Atoda; Din Ping Tsai; Wei Chi Lin

J. Appl. Phys. 89, 6139–6144 (2001) https://doi.org/10.1063/1.1365434

View articletitled, Micro-optical nonlinearity of a silver oxide layer

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Thermoluminescence for nonlinear heating profiles with application to laser heated emissions

John L. Lawless; D. Lo

J. Appl. Phys. 89, 6145–6152 (2001) https://doi.org/10.1063/1.1362407

View articletitled, Thermoluminescence for nonlinear heating profiles with application to laser heated emissions

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Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

J. Cui; Rusli; S. F. Yoon; E. J. Teo; M. B. Yu; K. Chew; J. Ahn; Q. Zhang; T. Osipowicz; F. Watt

J. Appl. Phys. 89, 6153–6158 (2001) https://doi.org/10.1063/1.1367398

View articletitled, Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

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Temperature dependence of optical transitions in AlGaAs

S. A. Lourenço; I. F. L. Dias; J. L. Duarte; E. Laureto; E. A. Meneses; J. R. Leite; I. Mazzaro

J. Appl. Phys. 89, 6159–6164 (2001) https://doi.org/10.1063/1.1367875

View articletitled, Temperature dependence of optical transitions in AlGaAs

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Infrared reflectance of GaN films grown on Si(001) substrates

Xiong Zhang; Yong-Tian Hou; Zhe-Chuan Feng; Jin-Li Chen

J. Appl. Phys. 89, 6165–6170 (2001) https://doi.org/10.1063/1.1368162

View articletitled, Infrared reflectance of GaN films grown on Si(001) substrates

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Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra

Sheng Lan; Satoshi Nishikawa; Osamu Wada; Kouichi Akahane; Yoshitaka Okada; Mitsuo Kawabe

J. Appl. Phys. 89, 6171–6176 (2001) https://doi.org/10.1063/1.1371942

View articletitled, Different responses of localized and extended excitons to exciton–exciton scattering manifested in excitation density-dependent photoluminescence excitation spectra

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Influence of surface plasmons on the Faraday effect in bismuth-substituted yttrium iron garnet films

J. Bremer; V. Vaicikauskas; F. Hansteen; O. Hunderi

J. Appl. Phys. 89, 6177–6182 (2001) https://doi.org/10.1063/1.1345864

View articletitled, Influence of surface plasmons on the Faraday effect in bismuth-substituted yttrium iron garnet films

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Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples

T. Monteiro; J. Soares; M. R. Correia; E. Alves

J. Appl. Phys. 89, 6183–6188 (2001) https://doi.org/10.1063/1.1369404

View articletitled, Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples

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Fine structure on the green band in ZnO

D. C. Reynolds; D. C. Look; B. Jogai

J. Appl. Phys. 89, 6189–6191 (2001) https://doi.org/10.1063/1.1356432

View articletitled, Fine structure on the green band in ZnO

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Raman spectroscopy and x-ray diffraction studies of (Ti,Al)N films deposited by filtered cathodic vacuum arc at room temperature

Y. H. Cheng; B. K. Tay; S. P. Lau; X. Shi

J. Appl. Phys. 89, 6192–6197 (2001) https://doi.org/10.1063/1.1352564

View articletitled, Raman spectroscopy and x-ray diffraction studies of (Ti,Al)N films deposited by filtered cathodic vacuum arc at room temperature

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Central-cell corrections and shallow donor states in strong magnetic fields

Sr. Gerardin Jayam; K. Navaneethakrishnan

J. Appl. Phys. 89, 6198–6203 (2001) https://doi.org/10.1063/1.1359168

View articletitled, Central-cell corrections and shallow donor states in strong magnetic fields

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Analysis of nanocrystalline diamond powder by scanning transmission electron microscopy

J. L. Peng; R. P. Fehlhaber; L. A. Bursill; D. G. McCulloch

J. Appl. Phys. 89, 6204–6213 (2001) https://doi.org/10.1063/1.1360702

View articletitled, Analysis of nanocrystalline diamond powder by scanning transmission electron microscopy

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Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to $n- GaN$

Dong-Feng Wang; Feng Shiwei; C. Lu; Abhishek Motayed; Muzar Jah; S. Noor Mohammad; Kenneth A. Jones; L. Salamanca-Riba

J. Appl. Phys. 89, 6214–6217 (2001) https://doi.org/10.1063/1.1350617

View articletitled, Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n-</mi><mi mathvariant="normal" xmlns="">GaN</mi></math></span>

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Evidence of exciton recombination at very high temperature in InGaN

Xiaojun Wang; Fow-Sen Choa; Feng Liu; T. L. Worchersky

J. Appl. Phys. 89, 6218–6222 (2001) https://doi.org/10.1063/1.1351543

View articletitled, Evidence of exciton recombination at very high temperature in InGaN

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Thermopower behavior for the shape memory alloy NiTi

J. Y. Lee; G. C. McIntosh; A. B. Kaiser; Y. W. Park; M. Kaack; J. Pelzl; Chul Koo Kim; Kyun Nahm

J. Appl. Phys. 89, 6223–6227 (2001) https://doi.org/10.1063/1.1368396

View articletitled, Thermopower behavior for the shape memory alloy NiTi

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Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in n-type 4H– and 6H–SiC

Hisaomi Iwata; Kohei M. Itoh

J. Appl. Phys. 89, 6228–6234 (2001) https://doi.org/10.1063/1.1366660

View articletitled, Donor and acceptor concentration dependence of the electron Hall mobility and the Hall scattering factor in <em>n</em>-type 4H– and 6H–SiC

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Temperature dependence of fundamental band gaps in group IV, III–V, and II–VI materials via a two-oscillator model

R. Pässler

J. Appl. Phys. 89, 6235–6240 (2001) https://doi.org/10.1063/1.1369407

View articletitled, Temperature dependence of fundamental band gaps in group IV, III–V, and II–VI materials via a two-oscillator model

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Thermoelectric properties of heavily GaP- and P-doped ${Si}_{0.95} {Ge}_{0.05}$

Osamu Yamashita

J. Appl. Phys. 89, 6241–6246 (2001) https://doi.org/10.1063/1.1352686

View articletitled, Thermoelectric properties of heavily GaP- and P-doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.95</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.05</mtext></mrow></msub></math></span>

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Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

F. Podevin; O. Vanbésien; D. Lippens

J. Appl. Phys. 89, 6247–6252 (2001) https://doi.org/10.1063/1.1359756

View articletitled, Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

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Nonequilibrium high-frequency noise and responsivity in multiple quantum well infrared photodetectors

M. Ershov

J. Appl. Phys. 89, 6253–6259 (2001) https://doi.org/10.1063/1.1367876

View articletitled, Nonequilibrium high-frequency noise and responsivity in multiple quantum well infrared photodetectors

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Radiative recombination process in InGaN active layers of GaN-based light emitting diodes

Ruisheng Zheng; Tsunemasa Taguchi

J. Appl. Phys. 89, 6260–6264 (2001) https://doi.org/10.1063/1.1367403

View articletitled, Radiative recombination process in InGaN active layers of GaN-based light emitting diodes

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Growth, structure, and transport properties of thin (>10 nm) $n$ -type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

T. Kamiya; K. Nakahata; Y. T. Tan; Z. A. K. Durrani; I. Shimizu

J. Appl. Phys. 89, 6265–6271 (2001) https://doi.org/10.1063/1.1368164

View articletitled, Growth, structure, and transport properties of thin (>10 nm) <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">n</mi></math></span>-type microcrystalline silicon prepared on silicon oxide and its application to single-electron transistor

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Evidence for shallow acceptors in GaN

D. C. Reynolds; D. C. Look; B. Jogai; R. J. Molnar

J. Appl. Phys. 89, 6272–6274 (2001) https://doi.org/10.1063/1.1364646

View articletitled, Evidence for shallow acceptors in GaN

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Characteristics of $n^{+}$ polycrystalline- ${Si/Al}_{2} O_{3} /Si$ metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using ${Al(CH}_{3})_{3}$ and $H_{2} O$ vapor

Dae-Gyu Park; Heung-Jae Cho; Kwan-Yong Lim; Chan Lim; In-Seok Yeo; Jae-Sung Roh; Jin Won Park

J. Appl. Phys. 89, 6275–6280 (2001) https://doi.org/10.1063/1.1368869

View articletitled, Characteristics of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi>n</mi><mrow><mi>+</mi></mrow></msup></math></span> polycrystalline-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math></span> metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al(CH</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">)</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi></math></span> vapor

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Carrier dynamics modeling in a precharged ${Si/CaF}_{2}$ heterostructure

M. Liniger; Alexander N. Kholod; S. Ménard; V. E. Borisenko; F. Bassani; G. Guirleo; F. Arnaud d’Avitaya

J. Appl. Phys. 89, 6281–6284 (2001) https://doi.org/10.1063/1.1367878

View articletitled, Carrier dynamics modeling in a precharged <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/CaF</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math></span> heterostructure

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Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

Wai Jyh Chang; Mau Phon Houng; Yeong Her Wang

J. Appl. Phys. 89, 6285–6293 (2001) https://doi.org/10.1063/1.1367399

View articletitled, Simulation of stress-induced leakage current in silicon dioxides: A modified trap-assisted tunneling model considering Gaussian-distributed traps and electron energy loss

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Origin and annealing of deep-level defects in p-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

P. Krispin; S. G. Spruytte; J. S. Harris; K. H. Ploog

J. Appl. Phys. 89, 6294–6301 (2001) https://doi.org/10.1063/1.1370115

View articletitled, Origin and annealing of deep-level defects in <em>p</em>-type GaAs/Ga(As,N)/GaAs heterostructures grown by molecular beam epitaxy

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Controlled modifications of electron injection on Au/Si and ${Au/SiO}_{2} /Si$ contacts using ballistic electron emission microscopy

A. Chahboun; R. Coratger; A. Pascale; P. Baules; F. Ajustron; I. Zorkani; J. Beauvillain

J. Appl. Phys. 89, 6302–6307 (2001) https://doi.org/10.1063/1.1365432

View articletitled, Controlled modifications of electron injection on Au/Si and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Au/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">/Si</mi></math></span> contacts using ballistic electron emission microscopy

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Role of oxygen in the film growth and giant magnetoresistance of Co/Cu multilayers

Satoshi Miura; Masakiyo Tsunoda; Migaku Takahashi

J. Appl. Phys. 89, 6308–6313 (2001) https://doi.org/10.1063/1.1367877

View articletitled, Role of oxygen in the film growth and giant magnetoresistance of Co/Cu multilayers

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Nitrogen incorporation effects in Fe(001) thin films

J. L. Menéndez; G. Armelles; A. Cebollada; F. Briones; F. Peiró; F. Güell; A. Cornet; M. L. Fernández Gubieda; J. Gutiérrez; C. Meyer

J. Appl. Phys. 89, 6314–6319 (2001) https://doi.org/10.1063/1.1368398

View articletitled, Nitrogen incorporation effects in Fe(001) thin films

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Magnetoresistance of manganite thin films induced by reaction with substrate

K. Hamaya; T. Taniyama; Y. Yamazaki

J. Appl. Phys. 89, 6320–6323 (2001) https://doi.org/10.1063/1.1370369

View articletitled, Magnetoresistance of manganite thin films induced by reaction with substrate

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Fabrication of magnetite nanorods by ultrasound irradiation

R. Vijaya Kumar; Yu Koltypin; X. N. Xu; Y. Yeshurun; A. Gedanken; I. Felner

J. Appl. Phys. 89, 6324–6328 (2001) https://doi.org/10.1063/1.1369408

View articletitled, Fabrication of magnetite nanorods by ultrasound irradiation

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Structural and magnetic properties of Co/AlN multilayers

D. Zanghi; A. Traverse; F. Petroff; J.-L. Maurice; A. Vaurès; J. P. Dallas

J. Appl. Phys. 89, 6329–6335 (2001) https://doi.org/10.1063/1.1345866

View articletitled, Structural and magnetic properties of Co/AlN multilayers

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

La doped ${Ba}_{1−x} {Sr}_{x} {TiO}_{3}$ thin films for tunable device applications

M. W. Cole; P. C. Joshi; M. H. Ervin

J. Appl. Phys. 89, 6336–6340 (2001) https://doi.org/10.1063/1.1366656

View articletitled, La doped <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films for tunable device applications

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New low temperature multiphase ferroelectric films

Eric Bescher; Yuhuan Xu; J. D. Mackenzie

J. Appl. Phys. 89, 6341–6348 (2001) https://doi.org/10.1063/1.1364647

View articletitled, New low temperature multiphase ferroelectric films

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Lattice contraction and cation ordering of ${ZrTiO}_{4}$ in the normal-to-incommensurate phase transition

Young K. Kim; Hyun M. Jang

J. Appl. Phys. 89, 6349–6355 (2001) https://doi.org/10.1063/1.1368871

View articletitled, Lattice contraction and cation ordering of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrTiO</mi><mrow><mn>4</mn></mrow></msub></math></span> in the normal-to-incommensurate phase transition

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Derivation of the shear compliance of thin films on quartz resonators from comparison of the frequency shifts on different harmonics: A perturbation analysis

Diethelm Johannsmann

J. Appl. Phys. 89, 6356–6364 (2001) https://doi.org/10.1063/1.1358317

View articletitled, Derivation of the shear compliance of thin films on quartz resonators from comparison of the frequency shifts on different harmonics: A perturbation analysis

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Microstructure and growth mechanism of epitaxial ${SrRuO}_{3}$ thin films on (001) ${LaAlO}_{3}$ substrates

J. C. Jiang; X. Q. Pan

J. Appl. Phys. 89, 6365–6369 (2001) https://doi.org/10.1063/1.1368160

View articletitled, Microstructure and growth mechanism of epitaxial <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrRuO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> thin films on (001) <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LaAlO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> substrates

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Fabrication of ferroelectric ${SrBi}_{2} {Ta}_{2} O_{9}$ capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties

B. K. Moon; K. Hironaka; C. Isobe; S. Hishikawa

J. Appl. Phys. 89, 6370–6377 (2001) https://doi.org/10.1063/1.1353564

View articletitled, Fabrication of ferroelectric <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> capacitor films using plasma-assisted metalorganic chemical vapor deposition and their electrical properties

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Deuterium in $({Ba,Sr)TiO}_{3}$ thin films: Kinetics and mechanisms of incorporation and removal during annealing

P. C. McIntyre; J-H. Ahn; R. J. Becker; R-V. Wang; S. R. Gilbert; L. Wills Mirkarimi; M. T. Schulberg

J. Appl. Phys. 89, 6378–6388 (2001) https://doi.org/10.1063/1.1367316

View articletitled, Deuterium in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ba,Sr)TiO</mi><mrow><mn>3</mn></mrow></msub></math></span> thin films: Kinetics and mechanisms of incorporation and removal during annealing

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Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

Marc-Alexandre Dubois; Paul Muralt

J. Appl. Phys. 89, 6389–6395 (2001) https://doi.org/10.1063/1.1359162

View articletitled, Stress and piezoelectric properties of aluminum nitride thin films deposited onto metal electrodes by pulsed direct current reactive sputtering

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NANOSCALE SCIENCE AND DESIGN

Surface reactivity of Si nanowires

X. H. Sun; H. Y. Peng; Y. H. Tang; W. S. Shi; N. B. Wong; C. S. Lee; S. T. Lee; T. K. Sham

J. Appl. Phys. 89, 6396–6399 (2001) https://doi.org/10.1063/1.1367402

View articletitled, Surface reactivity of Si nanowires

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Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field

V. López-Richard; G. E. Marques; C. Trallero-Giner

J. Appl. Phys. 89, 6400–6407 (2001) https://doi.org/10.1063/1.1368179

View articletitled, Dielectric response in narrow-gap semiconductor quantum wells in a magnetic field

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Grain growth and strain release in nanocrystalline copper

L. Lu; N. R. Tao; L. B. Wang; B. Z. Ding; K. Lu

J. Appl. Phys. 89, 6408–6414 (2001) https://doi.org/10.1063/1.1367401

View articletitled, Grain growth and strain release in nanocrystalline copper

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Shallow-deep transitions of impurities in semiconductor nanostructures

V. Ranjan; Vijay A. Singh

J. Appl. Phys. 89, 6415–6421 (2001) https://doi.org/10.1063/1.1367400

View articletitled, Shallow-deep transitions of impurities in semiconductor nanostructures

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Effective magnetic anisotropy of amorphous and nanocrystalline ${Fe}_{71.5} {Al}_{2} {Cu}_{1} {Nb}_{3} {Si}_{13.5} B_{9}$ alloy ribbon

G. R. Aranda; C. Miguel; P. Garcı́a-Tello; J. González

J. Appl. Phys. 89, 6422–6425 (2001) https://doi.org/10.1063/1.1371006

View articletitled, Effective magnetic anisotropy of amorphous and nanocrystalline <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">71.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">1</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">13.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>9</mn></mrow></msub></math></span> alloy ribbon

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Exciton dissociation effects on time resolved photoluminescence measurements of an ${Al}_{0.53} {In}_{0.47} {P/Ga}_{0.52} {In}_{0.48} {P/Al}_{0.53} {In}_{0.47} P$ -quantum well structure

Yoshihiro Ishitani; Toshiaki Fujita; Keijiro Nakasa; Yutaka Harima

J. Appl. Phys. 89, 6426–6430 (2001) https://doi.org/10.1063/1.1366661

View articletitled, Exciton dissociation effects on time resolved photoluminescence measurements of an <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P/Ga</mi><mrow><mi mathvariant="normal">0.52</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.48</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">P/Al</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><mi mathvariant="normal" xmlns="">P</mi></math></span>-quantum well structure

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Stable photoluminescence of zinc oxide quantum dots in silica nanoparticles matrix prepared by the combined sol–gel and spray drying method

Mikrajuddin; F. Iskandar; K. Okuyama; F. G. Shi

J. Appl. Phys. 89, 6431–6434 (2001) https://doi.org/10.1063/1.1360706

View articletitled, Stable photoluminescence of zinc oxide quantum dots in silica nanoparticles matrix prepared by the combined sol–gel and spray drying method

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DEVICE PHYSICS (PACS 85)

Performance assessment of adiabatic quantum cellular automata

L. Bonci; G. Iannaccone; M. Macucci

J. Appl. Phys. 89, 6435–6443 (2001) https://doi.org/10.1063/1.1365078

View articletitled, Performance assessment of adiabatic quantum cellular automata

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Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors

M. Rohner; I. Schnyder; D. Huber; H. Jäckel; C. Bergamaschi

J. Appl. Phys. 89, 6444–6448 (2001) https://doi.org/10.1063/1.1369406

View articletitled, Gain limitations of scaled InP/InGaAs heterojunction bipolar transistors

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Determination of the surface potential in thin-film transistors from $C–V$ measurements

P. Migliorato; S. W.-B. Tam; O. K. B. Lui; T. Shimoda

J. Appl. Phys. 89, 6449–6452 (2001) https://doi.org/10.1063/1.1361243

View articletitled, Determination of the surface potential in thin-film transistors from <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">C–V</mi></math></span> measurements

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Method for the determination of bulk and interface density of states in thin-film transistors

O. K. B. Lui; S. W.-B. Tam; P. Migliorato; T. Shimoda

J. Appl. Phys. 89, 6453–6458 (2001) https://doi.org/10.1063/1.1361244

View articletitled, Method for the determination of bulk and interface density of states in thin-film transistors

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Thermal stability of the strained- ${Si/Si}_{0.7} {Ge}_{0.3}$ heterostructure

Nobuyuki Sugii

J. Appl. Phys. 89, 6459–6463 (2001) https://doi.org/10.1063/1.1371004

View articletitled, Thermal stability of the strained-<span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/Si</mi><mrow><mi mathvariant="normal">0.7</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.3</mtext></mrow></msub></math></span> heterostructure

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Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

Dmitri Golubev; Leonid Kuzmin

J. Appl. Phys. 89, 6464–6472 (2001) https://doi.org/10.1063/1.1351002

View articletitled, Nonequilibrium theory of a hot-electron bolometer with normal metal-insulator-superconductor tunnel junction

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Harmonic and power balance tools for tapping-mode atomic force microscope

A. Sebastian; M. V. Salapaka; D. J. Chen; J. P. Cleveland

J. Appl. Phys. 89, 6473–6480 (2001) https://doi.org/10.1063/1.1365440

View articletitled, Harmonic and power balance tools for tapping-mode atomic force microscope

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Reflection-mode scattering-type scanning near-field optical microscope using a laser trapped gold colloidal particle as a scattering probe

Takeshi Konada; Hiroko Sasaki; Mitsushiro Yamaguchi; Yoshimasa Suzuki; Yasuo Sasaki

J. Appl. Phys. 89, 6481–6483 (2001) https://doi.org/10.1063/1.1331070

View articletitled, Reflection-mode scattering-type scanning near-field optical microscope using a laser trapped gold colloidal particle as a scattering probe

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Unsteady compression waves in interferometer windows

Dennis Hayes

J. Appl. Phys. 89, 6484–6486 (2001) https://doi.org/10.1063/1.1369409

View articletitled, Unsteady compression waves in interferometer windows

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Ultrasonic velocity measurements during phase transformations in steels using laser ultrasonics

Marc Dubois; André Moreau; Jean F. Bussière

J. Appl. Phys. 89, 6487–6495 (2001) https://doi.org/10.1063/1.1363681

View articletitled, Ultrasonic velocity measurements during phase transformations in steels using laser ultrasonics

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Removal of small particles on silicon wafer by laser-induced airborne plasma shock waves

J. M. Lee; K. G. Watkins

J. Appl. Phys. 89, 6496–6500 (2001) https://doi.org/10.1063/1.1353562

View articletitled, Removal of small particles on silicon wafer by laser-induced airborne plasma shock waves

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Enhancement of metal–semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition

C. J. Huang

J. Appl. Phys. 89, 6501–6505 (2001) https://doi.org/10.1063/1.1365057

View articletitled, Enhancement of metal–semiconductor barrier height with superthin silicon dioxide films deposited on gallium arsenide by liquid phase deposition

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Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates

D. K. Sarkar; M. Falke; H. Giesler; S. Teichert; G. Beddies; H.-J. Hinneberg

J. Appl. Phys. 89, 6506–6513 (2001) https://doi.org/10.1063/1.1369403

View articletitled, Role of a buried ultrathin amorphous interlayer on the growth of Co films on different metal substrates

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Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

Yong-Tae Moon; Dong-Joon Kim; Keun-Man Song; Chel-Jong Choi; Sang-Heon Han; Tae-Yeon Seong; Seong-Ju Park

J. Appl. Phys. 89, 6514–6518 (2001) https://doi.org/10.1063/1.1370368

View articletitled, Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

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Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers

T. Marek; S. Kunsági-Máté; H. P. Strunk

J. Appl. Phys. 89, 6519–6522 (2001) https://doi.org/10.1063/1.1352025

View articletitled, Model for the incorporation of excess arsenic into interstitial positions during the low-temperature growth of GaAs(001) layers

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Strength of plasma sprayed turbine-blade coatings using an advanced spallation technique

K. Baumung; G. Müller; J. Singer; G. I. Kanel; S. V. Razorenov

J. Appl. Phys. 89, 6523–6529 (2001) https://doi.org/10.1063/1.1353556

View articletitled, Strength of plasma sprayed turbine-blade coatings using an advanced spallation technique

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Soft elasticity and mechanical damping in liquid crystalline elastomers

S. M. Clarke; A. R. Tajbakhsh; E. M. Terentjev; C. Remillat; G. R. Tomlinson; J. R. House

J. Appl. Phys. 89, 6530–6535 (2001) https://doi.org/10.1063/1.1368177

View articletitled, Soft elasticity and mechanical damping in liquid crystalline elastomers

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COMMUNICATIONS

Optical transmission spectroscopy of semi-insulating GaAs substrate implanted by arsenic ions at different dosages

Gong-Ru Lin; Chin-Chia Hsu

J. Appl. Phys. 89, 6536–6538 (2001) https://doi.org/10.1063/1.1370088

View articletitled, Optical transmission spectroscopy of semi-insulating GaAs substrate implanted by arsenic ions at different dosages

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Nonlinear photoluminescence of fullerene-doped optical glasses

Heping Zeng; Zhenrong Sun; Yusaburo Segawa; Fucheng Lin; Sen Mao; Zhizhan Xu

J. Appl. Phys. 89, 6539–6541 (2001) https://doi.org/10.1063/1.1368157

View articletitled, Nonlinear photoluminescence of fullerene-doped optical glasses

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Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

P. Borri; W. Langbein; J. M. Hvam; F. Heinrichsdorff; M.-H. Mao; D. Bimberg

J. Appl. Phys. 89, 6542–6544 (2001) https://doi.org/10.1063/1.1367410

View articletitled, Coherent versus incoherent dynamics in InAs quantum-dot active wave guides

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Aluminum single-electron transistors studied at 0.3 K in different transport regimes

B. Buonomo; M. G. Castellano; R. Leoni; F. Mattioli; G. Torrioli; P. Carelli; F. Chiarello; C. Cosmelli

J. Appl. Phys. 89, 6545–6547 (2001) https://doi.org/10.1063/1.1361236

View articletitled, Aluminum single-electron transistors studied at 0.3 K in different transport regimes

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Seeding of InP islands on InAs quantum dot templates

G. Medeiros-Ribeiro; R. L. Maltez; A. A. Bernussi; D. Ugarte; W. de Carvalho, Jr.

J. Appl. Phys. 89, 6548–6550 (2001) https://doi.org/10.1063/1.1365939

View articletitled, Seeding of InP islands on InAs quantum dot templates

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Thermodynamic model of hydrogen-induced silicon surface layer cleavage

Weihua Han; Jinzhong Yu

J. Appl. Phys. 89, 6551–6553 (2001) https://doi.org/10.1063/1.1370109

View articletitled, Thermodynamic model of hydrogen-induced silicon surface layer cleavage

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Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes

Chia-Ming Lee; Chang-Cheng Chuo; Jing-Fu Dai; Xian-Fa Zheng; Jen-Inn Chyi

J. Appl. Phys. 89, 6554–6556 (2001) https://doi.org/10.1063/1.1370995

View articletitled, Temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes

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Effect of interfacial layers on dielectric properties in very thin ${SrBi}_{2} {Ta}_{2} O_{9}$ capacitors

Bum-Ki Moon; Chiharu Isobe; Katsuyuki Hironaka; Shinichi Hishikawa

J. Appl. Phys. 89, 6557–6559 (2001) https://doi.org/10.1063/1.1368158

View articletitled, Effect of interfacial layers on dielectric properties in very thin <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math></span> capacitors

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Gray track formation in ${KTiOPO}_{4}$ by swift ion irradiation

A. Deepthy; K. S. R. K. Rao; H. L. Bhat; Ravi Kumar; K. Asokan

J. Appl. Phys. 89, 6560–6562 (2001) https://doi.org/10.1063/1.1347949

View articletitled, Gray track formation in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">KTiOPO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math></span> by swift ion irradiation

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Comment on “Local responsivity in quantum well photodetectors” [J. Appl. Phys. 86, 7059 (1999)]

M. Ryzhii; I. Khmyrova

J. Appl. Phys. 89, 6563–6564 (2001) https://doi.org/10.1063/1.1367408

View articletitled, Comment on “Local responsivity in quantum well photodetectors” [J. Appl. Phys. <strong>86</strong>, 7059 (1999)]

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PROCEEDINGS OF THE 8TH JOINT MAGNETISM AND MAGNETIC MATERIALS-INTERMAG CONFERENCE

Exchange Biasing: Dynamics and Structural Effects I

Thermally assisted decay of pinning in polycrystalline exchange biased systems (invited)

M. J. Carey; N. Smith; B. A. Gurney; J. R. Childress; T. Lin

J. Appl. Phys. 89, 6579–6584 (2001) https://doi.org/10.1063/1.1358821

View articletitled, Thermally assisted decay of pinning in polycrystalline exchange biased systems (invited)

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Magnetization reversal dynamics in exchange-coupled NiO–Co bilayers

J. Camarero; Y. Pennec; M. Bonfim; J. Vogel; S. Pizzini; A. Fontaine; M. Cartier; F. Fettar; B. Dieny

J. Appl. Phys. 89, 6585–6587 (2001) https://doi.org/10.1063/1.1358822

View articletitled, Magnetization reversal dynamics in exchange-coupled NiO–Co bilayers

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Exchange anisotropy and micromagnetic properties of PtMn/NiFe bilayers

Taras Pokhil; Eric Linville; Sining Mao

J. Appl. Phys. 89, 6588–6590 (2001) https://doi.org/10.1063/1.1360676

View articletitled, Exchange anisotropy and micromagnetic properties of PtMn/NiFe bilayers

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Magnetization reversal in the pinned layer of PtMnCr/NiFe exchange biased bilayers

T. Hughes; H. Laidler; K. O’Grady; A. K. Petford-Long; Sining Mao; M. Kief; E. Linville

J. Appl. Phys. 89, 6591–6593 (2001) https://doi.org/10.1063/1.1359793

View articletitled, Magnetization reversal in the pinned layer of PtMnCr/NiFe exchange biased bilayers

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Ex situ CrPtMn pinning and ex situ CrPtMn pinned spin valves

Zhenghong Qian; Mark Tondra; Dexin Wang; James M. Daughton; David Brownell; Cathy Nordman; James A. Schuetz

J. Appl. Phys. 89, 6594–6596 (2001) https://doi.org/10.1063/1.1357145

View articletitled, <em>Ex situ</em> CrPtMn pinning and <em>ex situ</em> CrPtMn pinned spin valves

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Epitaxial growth and exchange biasing of PdMn/Fe bilayers grown by ion-beam sputtering

Ning Cheng; JaePyoung Ahn; Kannan M. Krishnan

J. Appl. Phys. 89, 6597–6599 (2001) https://doi.org/10.1063/1.1360677

View articletitled, Epitaxial growth and exchange biasing of PdMn/Fe bilayers grown by ion-beam sputtering

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Effects of phase transformation and interdiffusion on the exchange bias of NiFe/NiMn

Chih-Huang Lai; W. C. Lien; F. R. Chen; J. J. Kai; S. Mao

J. Appl. Phys. 89, 6600–6602 (2001) https://doi.org/10.1063/1.1354576

View articletitled, Effects of phase transformation and interdiffusion on the exchange bias of NiFe/NiMn

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Uniaxial anisotropy induced by field annealing in (001) NiMn/Co films

Yung-Hung Wang; Chih-Huang Lai; Ching-Ray Chang; Jyh-Shinn Yang; C. K. Lo

J. Appl. Phys. 89, 6603–6605 (2001) https://doi.org/10.1063/1.1354577

View articletitled, Uniaxial anisotropy induced by field annealing in (001) NiMn/Co films

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Magnetic micropatterning of FeNi/FeMn exchange bias bilayers by ion irradiation

A. Mougin; S. Poppe; J. Fassbender; B. Hillebrands; G. Faini; U. Ebels; M. Jung; D. Engel; A. Ehresmann; H. Schmoranzer

J. Appl. Phys. 89, 6606–6608 (2001) https://doi.org/10.1063/1.1354578

View articletitled, Magnetic micropatterning of FeNi/FeMn exchange bias bilayers by ion irradiation

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Enhancement of exchange bias in Mn–Ir/Co–Fe based spin valves with an ultrathin Cu underlayer and in situ Mn–Ir surface modification

Kojiro Yagami; Masakiyo Tsunoda; Migaku Takahashi

J. Appl. Phys. 89, 6609–6611 (2001) https://doi.org/10.1063/1.1357146

View articletitled, Enhancement of exchange bias in Mn–Ir/Co–Fe based spin valves with an ultrathin Cu underlayer and <em>in situ</em> Mn–Ir surface modification

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MANGANITES I

Stress-induced metallic behavior under magnetic field in $\Pr_{1−x} {Ca}_{x} {MnO}_{3}$ $(x=0.5$ and 0.4) thin films (invited)

W. Prellier; Ch. Simon; B. Mercey; M. Hervieu; A. M. Haghiri-Gosnet; D. Saurel; Ph. Lecoeur; B. Raveau

J. Appl. Phys. 89, 6612–6617 (2001) https://doi.org/10.1063/1.1357134

View articletitled, Stress-induced metallic behavior under magnetic field in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=0.5</mtext></math></span> and 0.4) thin films (invited)

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Magnetic phase diagram of layered manganites in the highly doped regime

J. F. Mitchell; C. D. Ling; J. E. Millburn; D. N. Argyriou; A. Berger; M. Medarde

J. Appl. Phys. 89, 6618–6620 (2001) https://doi.org/10.1063/1.1357135

View articletitled, Magnetic phase diagram of layered manganites in the highly doped regime

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Effect of layering and doping on the magnetic anisotropy of the layered manganites ${La}_{2−2x} {Sr}_{1+2x} {Mn}_{2} O_{7}$ (x=0.3–0.4)

U. Welp; A. Berger; V. K. Vlasko-Vlasov; H. You; K. E. Gray; J. F. Mitchell

J. Appl. Phys. 89, 6621–6623 (2001) https://doi.org/10.1063/1.1357136

View articletitled, Effect of layering and doping on the magnetic anisotropy of the layered manganites <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>2−2x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1+2x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math></span> (<em>x</em>=0.3–0.4)

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Mean-field approach for the $B$ phase of ${(La,Ca)MnO}_{3}$

P. Schlottmann

J. Appl. Phys. 89, 6624–6626 (2001) https://doi.org/10.1063/1.1357137

View articletitled, Mean-field approach for the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">B</mi></math></span> phase of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(La,Ca)MnO</mi><mrow><mn>3</mn></mrow></msub></math></span>

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Theory of the reentrant charge-order transition in the manganites

C. Stephen Hellberg

J. Appl. Phys. 89, 6627–6629 (2001) https://doi.org/10.1063/1.1358326

View articletitled, Theory of the reentrant charge-order transition in the manganites

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Temperature dependence of the spin wave spectrum in the double exchange model

A. Slepoy; R. R. P. Singh; E. Shender

J. Appl. Phys. 89, 6630–6632 (2001) https://doi.org/10.1063/1.1357776

View articletitled, Temperature dependence of the spin wave spectrum in the double exchange model

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Alternating current susceptibility study of the low doped regime of ${La}_{1−x} {Sr}_{x} {MnO}_{3}$ perovskites

B. Martı́nez; V. Laukhin; J. Fontcuberta; J. Nogués; V. Skumryev; J. S. Muñoz; L. Pinsard; A. Revcolevschi

J. Appl. Phys. 89, 6633–6635 (2001) https://doi.org/10.1063/1.1357138

View articletitled, Alternating current susceptibility study of the low doped regime of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> perovskites

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Impedance spectroscopy evidence of the phase separation in ${La}_{0.3} \Pr_{0.4} {Ca}_{0.3} {MnO}_{3}$ manganite

J. A. Souza; R. F. Jardim; R. Muccillo; E. N. S. Muccillo; M. S. Torikachvili; J. J. Neumeier

J. Appl. Phys. 89, 6636–6638 (2001) https://doi.org/10.1063/1.1357139

View articletitled, Impedance spectroscopy evidence of the phase separation in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">0.3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mi mathvariant="normal">0.4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> manganite

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Low-temperature resistivity minima in single-crystalline and ceramic ${La}_{0.8} {Sr}_{0.2} {MnO}_{3} :$ Mesoscopic transport and intergranular tunneling

M. Auslender; A. E. Kar’kin; E. Rozenberg; G. Gorodetsky

J. Appl. Phys. 89, 6639–6641 (2001) https://doi.org/10.1063/1.1357140

View articletitled, Low-temperature resistivity minima in single-crystalline and ceramic <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.8</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.2</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub><mi xmlns="">:</mi></math></span> Mesoscopic transport and intergranular tunneling

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GROWTH OF MAGNETIC TUNNEL JUNCTIONS

Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

W. H. Rippard; A. C. Perrella; R. A. Buhrman

J. Appl. Phys. 89, 6642–6646 (2001) https://doi.org/10.1063/1.1356708

View articletitled, Ballistic current transport studies of ferromagnetic multilayer films and tunnel junctions (invited)

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Deposition of [Ni–Fe/Al–O/Co–Fe] films with tunneling magnetoresistance effect using the interfacial modulation technique

Yasuyoshi Miyamoto; Kenji Machida; Naoto Hayashi; Takahiko Tamaki; Haruo Okuda

J. Appl. Phys. 89, 6647–6649 (2001) https://doi.org/10.1063/1.1361043

View articletitled, Deposition of [Ni–Fe/Al–O/Co–Fe] films with tunneling magnetoresistance effect using the interfacial modulation technique

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Electrode roughness and interfacial mixing effects on the tunnel junction thermal stability

S. Cardoso; P. P. Freitas; Z. G. Zhang; P. Wei; N. Barradas; J. C. Soares

J. Appl. Phys. 89, 6650–6652 (2001) https://doi.org/10.1063/1.1359216

View articletitled, Electrode roughness and interfacial mixing effects on the tunnel junction thermal stability

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Magnetic tunnel junctions on magnetic shield smoothed by gas cluster ion beam

J. J. Sun; K. Shimazawa; N. Kasahara; K. Sato; T. Kagami; S. Saruki; S. Araki; M. Matsuzaki

J. Appl. Phys. 89, 6653–6655 (2001) https://doi.org/10.1063/1.1359217

View articletitled, Magnetic tunnel junctions on magnetic shield smoothed by gas cluster ion beam

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Ion oxidation mechanisms controlling the formation of barriers in magnetic tunnel junctions

B. F. P. Roos; P. A. Beck; S. O. Demokritov; B. Hillebrands; D. Ozkaya

J. Appl. Phys. 89, 6656–6658 (2001) https://doi.org/10.1063/1.1356709

View articletitled, Ion oxidation mechanisms controlling the formation of barriers in magnetic tunnel junctions

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Interface composition in magnetic tunnel junctions

R. Schad; K. Mayen; J. McCord; D. Allen; D. Yang; M. Tondra; D. Wang

J. Appl. Phys. 89, 6659–6661 (2001) https://doi.org/10.1063/1.1356710

View articletitled, Interface composition in magnetic tunnel junctions

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Comparison of defect density measurements in magnetic tunnel junctions

D. Allen; R. Schad; G. Zangari; I. Zana; M. Tondra; D. Wang; D. Reed

J. Appl. Phys. 89, 6662–6664 (2001) https://doi.org/10.1063/1.1356711

View articletitled, Comparison of defect density measurements in magnetic tunnel junctions

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40% tunneling magnetoresistance after anneal at 380 °C for tunnel junctions with iron–oxide interface layers

Zongzhi Zhang; S. Cardoso; P. P. Freitas; X. Batlle; P. Wei; N. Barradas; J. C. Soares

J. Appl. Phys. 89, 6665–6667 (2001) https://doi.org/10.1063/1.1356712

View articletitled, 40% tunneling magnetoresistance after anneal at 380 °C for tunnel junctions with iron–oxide interface layers

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Spin polarized tunneling as a probe for quantitative analysis of field dependent domain structure in magnetic tunnel junctions

C. Tiusan; M. Hehn; T. Dimopoulos; K. Ounadjela

J. Appl. Phys. 89, 6668–6670 (2001) https://doi.org/10.1063/1.1361044

View articletitled, Spin polarized tunneling as a probe for quantitative analysis of field dependent domain structure in magnetic tunnel junctions

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SURFACE EFFECTS

Surface-step-induced magnetic anisotropy of $p(1×1)$ Fe on W(100)

Hector C. Mireles; J. L. Erskine

J. Appl. Phys. 89, 6671–6673 (2001) https://doi.org/10.1063/1.1355319

View articletitled, Surface-step-induced magnetic anisotropy of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">p(1×1)</mtext></math></span> Fe on W(100)

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Control of magnetic anisotropy in ${Fe}_{1−x} {Co}_{x}$ films on vicinal GaAs and ${Sc}_{1−y} {Er}_{y} As$ surfaces

A. F. Isakovic; J. Berezovsky; P. A. Crowell; L. C. Chen; D. M. Carr; B. D. Schultz; C. J. Palmstro/m

J. Appl. Phys. 89, 6674–6676 (2001) https://doi.org/10.1063/1.1355320

View articletitled, Control of magnetic anisotropy in <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub></math></span> films on vicinal GaAs and <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sc</mi><mrow><mtext>1−y</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Er</mi><mrow><mi>y</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math></span> surfaces

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Atomic-scale surface morphology of epitaxial ferromagnetic MnAs thin films grown on vicinal GaAs(111)B substrates

Satoshi Sugahara; Masaaki Tanaka

J. Appl. Phys. 89, 6677–6679 (2001) https://doi.org/10.1063/1.1360258

View articletitled, Atomic-scale surface morphology of epitaxial ferromagnetic MnAs thin films grown on vicinal GaAs(111)B substrates

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Growth, structure, and magnetic properties of Fe monolayers on ${Cu}_{84} {Al}_{16} (100)$

M. D. Martins; L. H. F. Andrade; P. L. Gastelois; W. A. A. Macedo

J. Appl. Phys. 89, 6680–6682 (2001) https://doi.org/10.1063/1.1355321

View articletitled, Growth, structure, and magnetic properties of Fe monolayers on <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">84</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">16</mi></mrow></msub><mi mathvariant="normal" xmlns="">(100)</mi></math></span>

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Suppression of 90° spin switching in Co nanomagnets grown on the $Cu (110)-{2×1} O$ surface

M. Tselepi; P. J. Bode; Y. B. Xu; G. Wastlbauer; S. Hope; J. A. C. Bland

J. Appl. Phys. 89, 6683–6685 (2001) https://doi.org/10.1063/1.1360259

View articletitled, Suppression of 90° spin switching in Co nanomagnets grown on the <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Cu</mi><mtext xmlns="">(110)-{2×1}</mtext><mi mathvariant="normal" xmlns="">O</mi></math></span> surface

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Thickness dependence of surface roughness and transport properties of ${La}_{2/3} {Ca}_{1/3} {MnO}_{3}$ epitaxial thin films

M. Bibes; Ll. Balcells; S. Valencia; S. Sena; B. Martı́nez; J. Fontcuberta; S. Nadolski; M. Wojcik; E. Jedryka

J. Appl. Phys. 89, 6686–6688 (2001) https://doi.org/10.1063/1.1359231

View articletitled, Thickness dependence of surface roughness and transport properties of <span class="inline-formula no-formula-id"><span class="mathFormula"></span><math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mi mathvariant="normal">2/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">1/3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math></span> epitaxial thin films

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SPIN DYNAMICS I

Nonlinear amplification and compression of envelope solitons by localized nonstationary parametric pumping

G. A. Melkov; Yu. V. Kobljanskyj; A. A. Serga; V. S. Tiberkevich; A. N. Slavin

J. Appl. Phys. 89, 6689–6691 (2001) https://doi.org/10.1063/1.1357141

View articletitled, Nonlinear amplification and compression of envelope solitons by localized nonstationary parametric pumping

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Investigation of the rise time and damping of spin excitations in ${Ni}_{81} {Fe}_{19}$ thin films

J. Wu; N. D. Hughes