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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Device performance and polymer morphology in polymer light emitting diodes: The control of device electrical properties and metal/polymer contact

Jie Liu; Yijian Shi; Liping Ma; Yang Yang

J. Appl. Phys. 88, 605–609 (2000) https://doi.org/10.1063/1.373799

Abstract

View articletitled, Device performance and polymer morphology in polymer light emitting diodes: The control of device electrical properties and metal/polymer contact

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Guiding large-scale spark discharges with ultrashort pulse laser filaments

Bruno La Fontaine; Daniel Comtois; Ching-Yuan Chien; Alain Desparois; Frédéric Génin; Geneviève Jarry; Tudor Johnston; Jean-Claude Kieffer; François Martin; Raafat Mawassi; Henri Pépin; Farouk A. M. Rizk; François Vidal; Carl Potvin; Pierre Couture; Hubert P. Mercure

J. Appl. Phys. 88, 610–615 (2000) https://doi.org/10.1063/1.373710

Abstract

View articletitled, Guiding large-scale spark discharges with ultrashort pulse laser filaments

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Hydrostatic pressure and thermal loading induced optical effects in double-coated optical fibers

Win-Jin Chang; Haw-Long Lee; Yu-Ching Yang

J. Appl. Phys. 88, 616–620 (2000) https://doi.org/10.1063/1.373711

Abstract

View articletitled, Hydrostatic pressure and thermal loading induced optical effects in double-coated optical fibers

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Optical gain on the $I_{2}$ $(B^{3} Π_{o^{+}} \to X^{3} Σ_{g}^{+})$ system produced by a visible wavelength diode laser

S. J. Davis; K. W. Holtzclaw

J. Appl. Phys. 88, 621–625 (2000) https://doi.org/10.1063/1.373712

Abstract

View articletitled, Optical gain on the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">I</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><msup xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>3</mn></mrow></msup><msub xmlns=""><mi>Π</mi><mrow><msup><mi>o</mi><mrow><mi>+</mi></mrow></msup></mrow></msub><mi xmlns="">→</mi><msup xmlns=""><mi mathvariant="normal">X</mi><mrow><mn>3</mn></mrow></msup><msubsup xmlns=""><mi>Σ</mi><mrow><mi>g</mi></mrow><mrow><mi>+</mi></mrow></msubsup><mi xmlns="">)</mi></math> system produced by a visible wavelength diode laser

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Monte Carlo simulation of electron transport in carbon tetrafluoride discharge plasma

A. V. Vasenkov

J. Appl. Phys. 88, 626–634 (2000) https://doi.org/10.1063/1.373713

Abstract

View articletitled, Monte Carlo simulation of electron transport in carbon tetrafluoride discharge plasma

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Time-resolved measurements of ion energy distributions in dual-mode pulsed-microwave/radio frequency plasma

O. Zabeida; A. Hallil; M. R. Wertheimer; L. Martinu

J. Appl. Phys. 88, 635–642 (2000) https://doi.org/10.1063/1.373714

Abstract

View articletitled, Time-resolved measurements of ion energy distributions in dual-mode pulsed-microwave/radio frequency plasma

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Control of ion energy distribution at substrates during plasma processing

S.-B. Wang; A. E. Wendt

J. Appl. Phys. 88, 643–646 (2000) https://doi.org/10.1063/1.373715

Abstract

View articletitled, Control of ion energy distribution at substrates during plasma processing

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Interaction of wide band gap single crystals with 248 nm excimer laser irradiation. VI. The influence of thermal pretreatment on laser desorption of positive ions from a water-containing ionic crystal ${(CaHPO}_{4} {⋅2H}_{2} O)$

Y. Kawaguchi; M. L. Dawes; S. C. Langford; J. T. Dickinson

J. Appl. Phys. 88, 647–656 (2000) https://doi.org/10.1063/1.373716

Abstract

View articletitled, Interaction of wide band gap single crystals with 248 nm excimer laser irradiation. VI. The influence of thermal pretreatment on laser desorption of positive ions from a water-containing ionic crystal <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(CaHPO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">⋅2H</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">O</mi><mi xmlns="">)</mi></math>

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Minimum time for laser induced amorphization of ${Ge}_{2} {Sb}_{2} {Te}_{5}$ films

V. Weidenhof; N. Pirch; I. Friedrich; S. Ziegler; M. Wuttig

J. Appl. Phys. 88, 657–664 (2000) https://doi.org/10.1063/1.373717

Abstract

View articletitled, Minimum time for laser induced amorphization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Te</mi><mrow><mn>5</mn></mrow></msub></math> films

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Local structure of ${In}_{0.5} {Ga}_{0.5} As$ from joint high-resolution and differential pair distribution function analysis

V. Petkov; I.-K. Jeong; F. Mohiuddin-Jacobs; Th. Proffen; S. J. L. Billinge; W. Dmowski

J. Appl. Phys. 88, 665–672 (2000) https://doi.org/10.1063/1.373718

Abstract

View articletitled, Local structure of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>0.5</mtext></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> from joint high-resolution and differential pair distribution function analysis

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Determination of the phase distribution in nitrogen-implanted iron from conversion electron Mössbauer spectroscopy data

J. Jagielski; M. Kopcewicz

J. Appl. Phys. 88, 673–678 (2000) https://doi.org/10.1063/1.373719

Abstract

View articletitled, Determination of the phase distribution in nitrogen-implanted iron from conversion electron Mössbauer spectroscopy data

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The role of capillary condensation of water in the nanoscale friction and wear properties of boron carbide films

R. Prioli; D. C. Reigada; F. L. Freire, Jr.

J. Appl. Phys. 88, 679–682 (2000) https://doi.org/10.1063/1.373720

Abstract

View articletitled, The role of capillary condensation of water in the nanoscale friction and wear properties of boron carbide films

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Carbon particle phase transformation kinetics in detonation waves

J. A. Viecelli; F. H. Ree

J. Appl. Phys. 88, 683–690 (2000) https://doi.org/10.1063/1.373721

Abstract

View articletitled, Carbon particle phase transformation kinetics in detonation waves

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Thermal expansion coefficients of $low -k$ dielectric films from Fourier analysis of x-ray reflectivity

C. E. Bouldin; W. E. Wallace; G. W. Lynn; S. C. Roth; W. L. Wu

J. Appl. Phys. 88, 691–695 (2000) https://doi.org/10.1063/1.373722

Abstract

View articletitled, Thermal expansion coefficients of <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">low</mi><mi xmlns="">-k</mi></math> dielectric films from Fourier analysis of x-ray reflectivity

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In-plane lattice thermal conductivity of a quantum-dot superlattice

A. Khitun; A. Balandin; J. L. Liu; K. L. Wang

J. Appl. Phys. 88, 696–699 (2000) https://doi.org/10.1063/1.373723

Abstract

View articletitled, In-plane lattice thermal conductivity of a quantum-dot superlattice

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Epitaxial and highly electrical conductive ${La}_{0.5} {Sr}_{0.5} {TiO}_{3}$ films grown by pulsed laser deposition in vacuum

Wenbin Wu; Fei Lu; K. H. Wong; Geoffrey Pang; C. L. Choy; Yuheng Zhang

J. Appl. Phys. 88, 700–704 (2000) https://doi.org/10.1063/1.373724

Abstract

View articletitled, Epitaxial and highly electrical conductive <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>0.5</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mn>3</mn></mrow></msub></math> films grown by pulsed laser deposition in vacuum

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Alloying of Co ultrathin films on Pt(111) with Ag buffer layers

C. S. Shern; C. W. Su; Y. E. Wu; T. Y. Fu

J. Appl. Phys. 88, 705–709 (2000) https://doi.org/10.1063/1.373725

Abstract

View articletitled, Alloying of Co ultrathin films on Pt(111) with Ag buffer layers

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Strain distribution in self-assembled InP/GaInP quantum dots

N. Y. Jin-Phillipp; F. Phillipp

J. Appl. Phys. 88, 710–715 (2000) https://doi.org/10.1063/1.373726

Abstract

View articletitled, Strain distribution in self-assembled InP/GaInP quantum dots

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Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon

Oliver Nast; Andreas J. Hartmann

J. Appl. Phys. 88, 716–724 (2000) https://doi.org/10.1063/1.373727

Abstract

View articletitled, Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon

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Strain determination in PbEuTe/PbTe multi-quantum wells

E. Abramof; P. H. O. Rappl; A. Y. Ueta; P. Motisuke

J. Appl. Phys. 88, 725–729 (2000) https://doi.org/10.1063/1.373728

Abstract

View articletitled, Strain determination in PbEuTe/PbTe multi-quantum wells

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Analytical solutions for strain in pyramidal quantum dots

G. S. Pearson; D. A. Faux

J. Appl. Phys. 88, 730–736 (2000) https://doi.org/10.1063/1.373729

Abstract

View articletitled, Analytical solutions for strain in pyramidal quantum dots

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Determination of the spring constant of an optical trap by external sinusoidal excitation and lock-in detection

Zhihua Ding; Guanming Lai; Teruhiko Sakakibara; Shigenobu Shinohara

J. Appl. Phys. 88, 737–741 (2000) https://doi.org/10.1063/1.373730

Abstract

View articletitled, Determination of the spring constant of an optical trap by external sinusoidal excitation and lock-in detection

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Low temperature phase transition of ${Li}_{0.12} {Na}_{0.88} {NbO}_{3}$ studied by Raman scattering

Y. D. Juang; S. B. Dai; Y. C. Wang; J. S. Hwang; M. L. Hu; W. S. Tse

J. Appl. Phys. 88, 742–745 (2000) https://doi.org/10.1063/1.373731

Abstract

View articletitled, Low temperature phase transition of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Li</mi><mrow><mi mathvariant="normal">0.12</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Na</mi><mrow><mi mathvariant="normal">0.88</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">NbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> studied by Raman scattering

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Photoluminescence spectra of ${Zn}_{1−x} {Cd}_{x} {Al}_{2} S_{4} (0.0⩽x⩽0.2;0.8⩽x⩽1.0)$ single crystals

Seung-Cheol Hyun; Chang-Dae Kim; Tae-Young Park; Hyung-Gon Kim; Moon-Seog Jin; Choong-Il Lee; Jae-Mo Goh; Wha-Tek Kim

J. Appl. Phys. 88, 746–749 (2000) https://doi.org/10.1063/1.373732

Abstract

View articletitled, Photoluminescence spectra of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">S</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub><mtext xmlns=""> (0.0⩽x⩽0.2;0.8⩽x⩽1.0)</mtext></math> single crystals

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Optical absorption in PbSe spherical quantum dots embedded in glass matrix

A. D. Andreev; E. V. Kolobkova; A. A. Lipovskii

J. Appl. Phys. 88, 750–757 (2000) https://doi.org/10.1063/1.373733

Abstract

View articletitled, Optical absorption in PbSe spherical quantum dots embedded in glass matrix

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Optical and electrical properties of opal carbon replica and effect of pyrolysis

H. Kajii; Y. Kawagishi; H. Take; K. Yoshino; A. A. Zakhidov; R. H. Baughman

J. Appl. Phys. 88, 758–763 (2000) https://doi.org/10.1063/1.373734

Abstract

View articletitled, Optical and electrical properties of opal carbon replica and effect of pyrolysis

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Raman investigation of ${Cd}_{x} {Zn}_{1−x} Se/ZnSe$ quantum wires: Strain relaxation and excitation profile

B. Schreder; A. Materny; W. Kiefer; T. Kümmell; G. Bacher; A. Forchel; G. Landwehr

J. Appl. Phys. 88, 764–771 (2000) https://doi.org/10.1063/1.373735

Abstract

View articletitled, Raman investigation of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">Se/ZnSe</mi></math> quantum wires: Strain relaxation and excitation profile

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Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires

M. De Giorgi; R. Rinaldi; A. Passaseo; M. Lomascolo; R. Cingolani; R. Ferreira; G. Bastard; A. Taurino; M. Catalano

J. Appl. Phys. 88, 772–776 (2000) https://doi.org/10.1063/1.373736

Abstract

View articletitled, Effects of quantum mechanical coupling on the optical properties of vertically stacked V-groove quantum wires

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Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)

O. M. Khreis; R. J. Curry; M. Somerton; W. P. Gillin

J. Appl. Phys. 88, 777–780 (2000) https://doi.org/10.1063/1.373803

Abstract

View articletitled, Infrared organic light emitting diodes using neodymium tris-(8-hydroxyquinoline)

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Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination

R. J. Curry; W. P. Gillin

J. Appl. Phys. 88, 781–785 (2000) https://doi.org/10.1063/1.373802

Abstract

View articletitled, Radiative recombination mechanisms in aluminum tris(8-hydroxyquinoline): Evidence for triplet exciton recombination

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

The electronic structure of ${La}_{0.66} {Ca}_{0.33} {MnO}_{3}$ and ${La}_{1.2} {Sr}_{1.8} {Mn}_{2} O_{7}$ studied by angle resolved photoemission

Rong Liu; W. C. Tonjes; C. G. Olson; J. J. Joyce; A. J. Arko; J. J. Neumeier; J. F. Mitchell; H. Zheng

J. Appl. Phys. 88, 786–789 (2000) https://doi.org/10.1063/1.373737

Abstract

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Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

T. W. Kang; Sh. U. Yuldashev; I. L. Bolotin; S. H. Park; D. Y. Kim; S. H. Won; K. S. Jung; T. W. Kim

J. Appl. Phys. 88, 790–793 (2000) https://doi.org/10.1063/1.373738

Abstract

View articletitled, Effect of the band-tail states on the exciton peaks in GaN epilayers grown on sapphire substrates

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Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP

R. Darwich; B. Massarani

J. Appl. Phys. 88, 794–799 (2000) https://doi.org/10.1063/1.373804

Abstract

View articletitled, Effect of fill-pulse parameters on deep-level transient spectroscopy peaks in highly doped p-type InP

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Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

S. Pérez; T. González; S. L. Delage; J. Obregon

J. Appl. Phys. 88, 800–807 (2000) https://doi.org/10.1063/1.373739

Abstract

View articletitled, Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

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Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and ${Bi}_{0.92} {Sb}_{0.08}$ alloy thin films

Sunglae Cho; Yunki Kim; Antonio DiVenere; George K. L. Wong; John B. Ketterson; Jerry R. Meyer

J. Appl. Phys. 88, 808–812 (2000) https://doi.org/10.1063/1.373740

Abstract

View articletitled, Anisotropic Seebeck and magneto-Seebeck coefficients of Bi and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mtext>0.92</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sb</mi><mrow><mtext>0.08</mtext></mrow></msub></math> alloy thin films

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Thermoelectric and transport properties of ${β-Ag}_{2} Se$ compounds

Marhoun Ferhat; Jiro Nagao

J. Appl. Phys. 88, 813–816 (2000) https://doi.org/10.1063/1.373741

Abstract

View articletitled, Thermoelectric and transport properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">β-Ag</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> compounds

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Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

P. Damayanthi; R. P. Joshi; J. A. McAdoo

J. Appl. Phys. 88, 817–821 (2000) https://doi.org/10.1063/1.373742

Abstract

View articletitled, Calculations of hole transport characteristics in bulk GaSb with comparisons to GaAs

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On the temperature dependence of the electrical and optical properties of ${Cu}_{2} {GeSe}_{3}$

G. Marcano; D. B. Bracho; C. Rincón; G. Sánchez Pérez; L. Nieves

J. Appl. Phys. 88, 822–828 (2000) https://doi.org/10.1063/1.373743

Abstract

View articletitled, On the temperature dependence of the electrical and optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">GeSe</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Monte Carlo evaluations of degeneracy and interface roughness effects on electron transport in AlGaN–GaN heterostructures

T. Li; R. P. Joshi; C. Fazi

J. Appl. Phys. 88, 829–837 (2000) https://doi.org/10.1063/1.373744

Abstract

View articletitled, Monte Carlo evaluations of degeneracy and interface roughness effects on electron transport in AlGaN–GaN heterostructures

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Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon

L. Hlou; K. Amechnoue; J. Diyadi; J. C. Vaissiere; L. Varani; A. Moatadid

J. Appl. Phys. 88, 838–841 (2000) https://doi.org/10.1063/1.373745

Abstract

View articletitled, Correlation functions from multiple solution of the transient Boltzmann equation in semiconductors: Application to noise temperature of holes in silicon

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Capture cross sections of defect states at the ${Si/SiO}_{2}$ interface

J. Albohn; W. Füssel; N. D. Sinh; K. Kliefoth; W. Fuhs

J. Appl. Phys. 88, 842–849 (2000) https://doi.org/10.1063/1.373746

Abstract

View articletitled, Capture cross sections of defect states at the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> interface

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Defect dominated charge transport in amorphous ${Ta}_{2} O_{5}$ thin films

R. M. Fleming; D. V. Lang; C. D. W. Jones; M. L. Steigerwald; D. W. Murphy; G. B. Alers; Y.-H. Wong; R. B. van Dover; J. R. Kwo; A. M. Sergent

J. Appl. Phys. 88, 850–862 (2000) https://doi.org/10.1063/1.373747

Abstract

View articletitled, Defect dominated charge transport in amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub></math> thin films

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Imaging the variation in band bending across a silicon pn junction surface using spectromicroscopy

R. J. Phaneuf; H.-C. Kan; M. Marsi; L. Gregoratti; S. Günther; M. Kiskinova

J. Appl. Phys. 88, 863–868 (2000) https://doi.org/10.1063/1.373748

Abstract

View articletitled, Imaging the variation in band bending across a silicon pn junction surface using spectromicroscopy

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Reduced master equation analysis of multiple–tunnel junction single-electron memory device

M. B. A. Jalil; M. Wagner

J. Appl. Phys. 88, 869–877 (2000) https://doi.org/10.1063/1.373749

Abstract

View articletitled, Reduced master equation analysis of multiple–tunnel junction single-electron memory device

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Visible-near ultraviolet ellipsometric study of ${Zn}_{1−x} {Mg}_{x} Se$ and ${Zn}_{1−x} {Be}_{x} Se$ alloys

Hosun Lee; In-Young Kim; J. Powell; D. E. Aspnes; S. Lee; F. Peiris; J. K. Furdyna

J. Appl. Phys. 88, 878–882 (2000) https://doi.org/10.1063/1.373750

Abstract

View articletitled, Visible-near ultraviolet ellipsometric study of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mg</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zn</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Be</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Se</mi></math> alloys

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Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

T. H. Chen; Y. S. Huang; D. Y. Lin; Fred H. Pollak; M. S. Goorsky; D. C. Streit; M. Wojtowicz

J. Appl. Phys. 88, 883–888 (2000) https://doi.org/10.1063/1.373751

Abstract

View articletitled, Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation

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Initial stages of metal/organic semiconductor interface formation

I. G. Hill; A. J. Mäkinen; Z. H. Kafafi

J. Appl. Phys. 88, 889–895 (2000) https://doi.org/10.1063/1.373752

Abstract

View articletitled, Initial stages of metal/organic semiconductor interface formation

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Trapping and detrapping of electrons photoinjected from silicon to ultrathin ${SiO}_{2}$ overlayers. I. In vacuum and in the presence of ambient oxygen

N. Shamir; J. G. Mihaychuk; H. M. van Driel

J. Appl. Phys. 88, 896–908 (2000) https://doi.org/10.1063/1.373753

Abstract

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Trapping and detrapping of electrons photoinjected from silicon to ultrathin ${SiO}_{2}$ overlayers. II. In He, Ar, $H_{2},$ $N_{2},$ CO, and $N_{2} O$

N. Shamir; H. M. van Driel

J. Appl. Phys. 88, 909–917 (2000) https://doi.org/10.1063/1.373754

Abstract

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Deconvolution of time of flight photocurrent transients and electronic response time in columnar liquid crystals

K. J. Donovan; T. Kreouzis

J. Appl. Phys. 88, 918–923 (2000) https://doi.org/10.1063/1.373755

Abstract

View articletitled, Deconvolution of time of flight photocurrent transients and electronic response time in columnar liquid crystals

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Absorption and photoluminescence spectra of the diluted magnetic semiconductor ${Ga}_{1−x} {Fe}_{x} Sb$

N. Karar; S. Basu; R. Venkataraghavan; B. M. Arora

J. Appl. Phys. 88, 924–926 (2000) https://doi.org/10.1063/1.373756

Abstract

View articletitled, Absorption and photoluminescence spectra of the diluted magnetic semiconductor <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Sb</mi></math>

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Self-affine roughness effects on electron transmission and electric current in tunnel junctions

G. Palasantzas; J. Barnas; Th. M. De Hosson

J. Appl. Phys. 88, 927–931 (2000) https://doi.org/10.1063/1.373757

Abstract

View articletitled, Self-affine roughness effects on electron transmission and electric current in tunnel junctions

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Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements

A. F. Braña; C. Diaz-Paniagua; F. Batallan; J. A. Garrido; E. Muñoz; F. Omnes

J. Appl. Phys. 88, 932–937 (2000) https://doi.org/10.1063/1.373758

Abstract

View articletitled, Scattering times in AlGaN/GaN two-dimensional electron gas from magnetoresistance measurements

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Electrical characterization of $P_{b}$ centers in ${(100)Si–SiO}_{2}$ structures: The influence of surface potential on passivation during post metallization anneal

Lars-Åke Ragnarsson; Per Lundgren

J. Appl. Phys. 88, 938–942 (2000) https://doi.org/10.1063/1.373759

Abstract

View articletitled, Electrical characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>P</mi><mrow><mi>b</mi></mrow></msub></math> centers in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">(100)Si–SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> structures: The influence of surface potential on passivation during post metallization anneal

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Possibility of multiple tunnelling current peaks in a coupled quantum well system

D. Luis; J. P. Dı́az; N. E. Capuj; H. Cruz

J. Appl. Phys. 88, 943–947 (2000) https://doi.org/10.1063/1.373760

Abstract

View articletitled, Possibility of multiple tunnelling current peaks in a coupled quantum well system

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Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs

Rainer Pickenhain; Heidemarie Schmidt; Volker Gottschalch

J. Appl. Phys. 88, 948–959 (2000) https://doi.org/10.1063/1.373761

Abstract

View articletitled, Deep level transient spectroscopy and pseudopotential superlattice calculation for an InAs monolayer embedded in GaAs

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Aging of electrical conductivity in conducting polymer films based on polyaniline

V. Jousseaume; M. Morsli; A. Bonnet

J. Appl. Phys. 88, 960–966 (2000) https://doi.org/10.1063/1.373762

Abstract

View articletitled, Aging of electrical conductivity in conducting polymer films based on polyaniline

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

The effect of magnetic interactions on low temperature saturation remanence in fine magnetic particle systems

Christopher R. Pike; Andrew P. Roberts; Kenneth L. Verosub

J. Appl. Phys. 88, 967–974 (2000) https://doi.org/10.1063/1.373763

Abstract

View articletitled, The effect of magnetic interactions on low temperature saturation remanence in fine magnetic particle systems

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Exchange biasing by ${Ir}_{19} {Mn}_{81} :$ Dependence on temperature, microstructure and antiferromagnetic layer thickness

J. van Driel; F. R. de Boer; K.-M. H. Lenssen; R. Coehoorn

J. Appl. Phys. 88, 975–982 (2000) https://doi.org/10.1063/1.373764

Abstract

View articletitled, Exchange biasing by <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ir</mi><mrow><mi mathvariant="normal">19</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">81</mi></mrow></msub><mi xmlns="">:</mi></math> Dependence on temperature, microstructure and antiferromagnetic layer thickness

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Magnetic phase diagrams of the trilayers with the noncollinear coupling in the form of the proximity magnetism model

Shi-shen Yan; P. Grünberg; Liang-mo Mei

J. Appl. Phys. 88, 983–987 (2000) https://doi.org/10.1063/1.373765

Abstract

View articletitled, Magnetic phase diagrams of the trilayers with the noncollinear coupling in the form of the proximity magnetism model

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Hard magnetic properties of melt-spun ${R(Fe,M)}_{12}$ nitrides (R=Nd or Pr; M=Mo or V)

Jinbo Yang; Ph. Oleinek; K.-H. Müller

J. Appl. Phys. 88, 988–992 (2000) https://doi.org/10.1063/1.373766

Abstract

View articletitled, Hard magnetic properties of melt-spun <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">R(Fe,M)</mi><mrow><mn>12</mn></mrow></msub></math> nitrides (R=Nd or Pr; M=Mo or V)

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Optimization processes of giant magnetoresistance characteristic for mixed magnetic multilayers

W. Schepper; A. Hütten; G. Reiss

J. Appl. Phys. 88, 993–998 (2000) https://doi.org/10.1063/1.373767

Abstract

View articletitled, Optimization processes of giant magnetoresistance characteristic for mixed magnetic multilayers

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Magnetic switching in submicron-scale periodic magnetic arrays

P. Vavassori; O. Donzelli; V. Metlushko; M. Grimsditch; B. Ilic; P. Neuzil; R. Kumar

J. Appl. Phys. 88, 999–1003 (2000) https://doi.org/10.1063/1.373768

Abstract

View articletitled, Magnetic switching in submicron-scale periodic magnetic arrays

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

$(Mn,$ $Sb)$ doped- ${Pb(Zr, Ti)O}_{3}$ infrared detector arrays

Y. Q. Xu; N. J. Wu; A. Ignatiev

J. Appl. Phys. 88, 1004–1007 (2000) https://doi.org/10.1063/1.373769

Abstract

View articletitled, <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">Mn</mi><mi xmlns="">,</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Sb</mi><mi xmlns="">)</mi></math> doped-<math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pb(Zr, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> infrared detector arrays

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Sol-gel derived ${Ba(Fe, Ti)O}_{3}$ ferroelectric materials for infrared sensors

Jayati Ray (Mal); Peter Hing

J. Appl. Phys. 88, 1008–1014 (2000) https://doi.org/10.1063/1.373770

Abstract

View articletitled, Sol-gel derived <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba(Fe, Ti)O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> ferroelectric materials for infrared sensors

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Crystal structure and dielectric relaxation studies of the $[{N(CH}_{3})_{3} {H]}_{3} {Sb}_{2(1−x)} {Bi}_{2x} {Cl}_{9}$ mixed crystals

G. Bator; R. Jakubas; J. Zaleski; J. Mróz

J. Appl. Phys. 88, 1015–1023 (2000) https://doi.org/10.1063/1.373771

Abstract

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Modeling of laser-induced breakdown in dielectrics with subpicosecond pulses

T. Apostolova; Y. Hahn

J. Appl. Phys. 88, 1024–1034 (2000) https://doi.org/10.1063/1.373772

Abstract

View articletitled, Modeling of laser-induced breakdown in dielectrics with subpicosecond pulses

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Effects of processing on the characteristics of ${SrBi}_{2} {Ta}_{2} O_{9}$ films prepared by metalorganic decomposition

Aidong Li; Di Wu; Huiqin Ling; Tao Yu; Mu Wang; Xiaobo Yin; Zhiguo Liu; Naiben Ming

J. Appl. Phys. 88, 1035–1041 (2000) https://doi.org/10.1063/1.373773

Abstract

View articletitled, Effects of processing on the characteristics of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SrBi</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ta</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">9</mi></mrow></msub></math> films prepared by metalorganic decomposition

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Light-induced charge-transport properties of photorefractive barium–calcium–titanate crystals doped with iron

H. Veenhuis; T. Börger; K. Buse; C. Kuper; H. Hesse; E. Krätzig

J. Appl. Phys. 88, 1042–1049 (2000) https://doi.org/10.1063/1.373774

Abstract

View articletitled, Light-induced charge-transport properties of photorefractive barium–calcium–titanate crystals doped with iron

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DEVICE PHYSICS (PACS 85)

Continuous anneal method for characterizing the thermal stability of ultraviolet Bragg gratings

Jacob Rathje; Martin Kristensen; Jens Engholm Pedersen

J. Appl. Phys. 88, 1050–1055 (2000) https://doi.org/10.1063/1.373775

Abstract

View articletitled, Continuous anneal method for characterizing the thermal stability of ultraviolet Bragg gratings

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Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures

J. Požela; K. Požela; A. Namajūnas; V. Jucienė; V. Mokerov; Yu. Fedorov; A. Hook

J. Appl. Phys. 88, 1056–1060 (2000) https://doi.org/10.1063/1.373776

Abstract

View articletitled, Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures

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Applied voltage effect on the electron delocalization of excited ${Ce}^{3+}$ in SrS:Ce electroluminescent devices

C. Barthou; J. Benoit; P. Benalloul; K. Polamo; E. Soininen

J. Appl. Phys. 88, 1061–1066 (2000) https://doi.org/10.1063/1.373777

Abstract

View articletitled, Applied voltage effect on the electron delocalization of excited <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Ce</mi><mrow><mi mathvariant="normal">3+</mi></mrow></msup></math> in SrS:Ce electroluminescent devices

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AlGaN/GaN heterojunction bipolar transistor structures-design considerations

Yumin Zhang; Cheng Cai; P. Paul Ruden

J. Appl. Phys. 88, 1067–1072 (2000) https://doi.org/10.1063/1.373778

Abstract

View articletitled, AlGaN/GaN heterojunction bipolar transistor structures-design considerations

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Electroluminescence emission pattern of organic light-emitting diodes: Implications for device efficiency calculations

Ji-Seon Kim; Peter K. H. Ho; Neil C. Greenham; Richard H. Friend

J. Appl. Phys. 88, 1073–1081 (2000) https://doi.org/10.1063/1.373779

Abstract

View articletitled, Electroluminescence emission pattern of organic light-emitting diodes: Implications for device efficiency calculations

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Laser coloration and bleaching of amorphous ${WO}_{3}$ thin film

Y. F. Lu; H. Qiu

J. Appl. Phys. 88, 1082–1087 (2000) https://doi.org/10.1063/1.373780

Abstract

View articletitled, Laser coloration and bleaching of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">WO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin film

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Characterization of ${ZrO}_{2} {/Y}_{2} O_{3}$ laser ablation plasma in vacuum, oxygen, and argon environments

A. A. Voevodin; J. G. Jones; J. S. Zabinski

J. Appl. Phys. 88, 1088–1096 (2000) https://doi.org/10.1063/1.373781

Abstract

View articletitled, Characterization of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">ZrO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/Y</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> laser ablation plasma in vacuum, oxygen, and argon environments

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Electron microscopy and Rutherford backscattering study of nucleation and growth in nanosized W–Ti–O thin films

M. Ferroni; V. Guidi; G. Martinelli; E. Comini; G. Sberveglieri; D. Boscarino; G. Della Mea

J. Appl. Phys. 88, 1097–1103 (2000) https://doi.org/10.1063/1.373782

Abstract

View articletitled, Electron microscopy and Rutherford backscattering study of nucleation and growth in nanosized W–Ti–O thin films

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Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model

Toru Takayama; Masaaki Yuri; Kunio Itoh; Takaaki Baba; James S. Harris, Jr.

J. Appl. Phys. 88, 1104–1110 (2000) https://doi.org/10.1063/1.373783

Abstract

View articletitled, Theoretical analysis of unstable two-phase region and microscopic structure in wurtzite and zinc-blende InGaN using modified valence force field model

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Simulation of trench homogeneity in plasma immersion ion implantation

G. Keller; U. Rüde; L. Stals; S. Mändl; B. Rauschenbach

J. Appl. Phys. 88, 1111–1117 (2000) https://doi.org/10.1063/1.373784

Abstract

View articletitled, Simulation of trench homogeneity in plasma immersion ion implantation

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Depleted semi-insulating silicon/silicon material formed by wafer bonding

Mikael Johansson; Stefan Bengtsson

J. Appl. Phys. 88, 1118–1123 (2000) https://doi.org/10.1063/1.373785

Abstract

View articletitled, Depleted semi-insulating silicon/silicon material formed by wafer bonding

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Transmission electron microscopy structure and platinum-like temperature coefficient of resistance in a ruthenate-based thick film resistor with copper oxide

J. C. Jiang; Gary M. Crosbie; W. Tian; K. K. Cameron; X. Q. Pan

J. Appl. Phys. 88, 1124–1128 (2000) https://doi.org/10.1063/1.373786

Abstract

View articletitled, Transmission electron microscopy structure and platinum-like temperature coefficient of resistance in a ruthenate-based thick film resistor with copper oxide

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Molecular-dynamics simulations of steady-state growth of ion-deposited tetrahedral amorphous carbon films

H. U. Jäger; K. Albe

J. Appl. Phys. 88, 1129–1135 (2000) https://doi.org/10.1063/1.373787

Abstract

View articletitled, Molecular-dynamics simulations of steady-state growth of ion-deposited tetrahedral amorphous carbon films

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Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

Yoshitaka Okada; Yoshimasa Iuchi; Mitsuo Kawabe; James S. Harris, Jr.

J. Appl. Phys. 88, 1136–1140 (2000) https://doi.org/10.1063/1.373788

Abstract

View articletitled, Basic properties of GaAs oxide generated by scanning probe microscope tip-induced nano-oxidation process

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Relation between the suppression of the generation of stacking faults and the mechanism of silicon oxidation during annealing under argon containing oxygen

Toshiharu Suzuki

J. Appl. Phys. 88, 1141–1148 (2000) https://doi.org/10.1063/1.373789

Abstract

View articletitled, Relation between the suppression of the generation of stacking faults and the mechanism of silicon oxidation during annealing under argon containing oxygen

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Influence of nitrogen and temperature on the deposition of tetrahedrally bonded amorphous carbon

B. Kleinsorge; A. C. Ferrari; J. Robertson; W. I. Milne

J. Appl. Phys. 88, 1149–1157 (2000) https://doi.org/10.1063/1.373790

Abstract

View articletitled, Influence of nitrogen and temperature on the deposition of tetrahedrally bonded amorphous carbon

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Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

M. Sumiya; K. Yoshimura; T. Ito; K. Ohtsuka; S. Fuke; K. Mizuno; M. Yoshimoto; H. Koinuma; A. Ohtomo; M. Kawasaki

J. Appl. Phys. 88, 1158–1165 (2000) https://doi.org/10.1063/1.373791

Abstract

View articletitled, Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate

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Using the flowing afterglow of a plasma to inactivate Bacillus subtilis spores: Influence of the operating conditions

S. Moreau; M. Moisan; M. Tabrizian; J. Barbeau; J. Pelletier; A. Ricard; L’H. Yahia

J. Appl. Phys. 88, 1166–1174 (2000) https://doi.org/10.1063/1.373792

Abstract

View articletitled, Using the flowing afterglow of a plasma to inactivate Bacillus subtilis spores: Influence of the operating conditions

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COMMUNICATIONS

Photoluminescence of perovskite lanthanum aluminate single crystals

Y. Kawabe; A. Yamanaka; E. Hanamura; T. Kimura; Y. Takiguchi; H. Kan; Y. Tokura

J. Appl. Phys. 88, 1175–1177 (2000) https://doi.org/10.1063/1.373793

Abstract

View articletitled, Photoluminescence of perovskite lanthanum aluminate single crystals

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Transverse compressive stress effects on the critical current of Bi-2223/Ag tapes reinforced with pure Ag and oxide-dispersion-strengthened Ag

S. L. Bray; J. W. Ekin; C. C. Clickner; L. J. Masur

J. Appl. Phys. 88, 1178–1180 (2000) https://doi.org/10.1063/1.373801

Abstract

View articletitled, Transverse compressive stress effects on the critical current of Bi-2223/Ag tapes reinforced with pure Ag and oxide-dispersion-strengthened Ag

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The finite size effect in a planar inductively coupled plasma

Chin Wook Chung; S. S. Kim; S. H. Seo; H. Y. Chang; N. S. Yoon

J. Appl. Phys. 88, 1181–1183 (2000) https://doi.org/10.1063/1.373794

Abstract

View articletitled, The finite size effect in a planar inductively coupled plasma

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Laser–plasma interactions in 532 nm ablation of Si

Gyoowan Han; P. Terrence Murray

J. Appl. Phys. 88, 1184–1186 (2000) https://doi.org/10.1063/1.373795

Abstract

View articletitled, Laser–plasma interactions in 532 nm ablation of Si

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Sensitive characterization of phase and amplitude semiconductor nonlinearities for broadband 20 fs excitation

J. Kunde; S. Arlt; L. Gallmann; F. Morier-Genoud; U. Siegner; U. Keller

J. Appl. Phys. 88, 1187–1189 (2000) https://doi.org/10.1063/1.373796

Abstract

View articletitled, Sensitive characterization of phase and amplitude semiconductor nonlinearities for broadband 20 fs excitation

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High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis

C. Main; S. Reynolds; R. I. Badran; J. M. Marshall

J. Appl. Phys. 88, 1190–1192 (2000) https://doi.org/10.1063/1.373797

Abstract

View articletitled, High resolution density of states spectroscopy in semiconductors by exact post-transit current analysis

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Ferroelectric behavior of epitaxial ${Bi}_{2} {VO}_{5.5}$ thin films on Si(100) formed by pulsed-laser deposition

M. Joseph; H. Y. Lee; H. Tabata; T. Kawai

J. Appl. Phys. 88, 1193–1195 (2000) https://doi.org/10.1063/1.373798

Abstract

View articletitled, Ferroelectric behavior of epitaxial <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Bi</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">VO</mi><mrow><mtext>5.5</mtext></mrow></msub></math> thin films on Si(100) formed by pulsed-laser deposition

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ERRATA

Erratum: “Photoluminescence of perovskite lanthanum aluminate single crystals” [J. Appl. Phys. 87, 7594 (2000)]

Y. Kawabe; A. Yamanaka; E. Hanamura; T. Kimura; Y. Takiguchi; H. Kan; Y. Tokura

J. Appl. Phys. 88, 1196 (2000) https://doi.org/10.1063/1.373800

View articletitled, Erratum: “Photoluminescence of perovskite lanthanum aluminate single crystals” [J. Appl. Phys. 87, 7594 (2000)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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