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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

π/2 and 5π/2 twisted bistable nematic liquid crystal display

Z. L. Xie; Y. M. Dong; S. Y. Xu; H. J. Gao; H. S. Kwok

J. Appl. Phys. 87, 2673–2676 (2000) https://doi.org/10.1063/1.372240

Abstract

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The coupling of microwave radiation to surface plasmon polaritons and guided modes via dielectric gratings

A. P. Hibbins; J. R. Sambles; C. R. Lawrence

J. Appl. Phys. 87, 2677–2683 (2000) https://doi.org/10.1063/1.372241

Abstract

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Threshold effect for photorefractive light-induced scattering and signal beam amplification in doped ${LiNbO}_{3}$ crystals

Nouel Y. Kamber; Jingjun Xu; Sonia M. Mikha; Guoquan Zhang; Xinzheng Zhang; Simin Liu; Guangyin Zhang

J. Appl. Phys. 87, 2684–2690 (2000) https://doi.org/10.1063/1.372242

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Modeling of rapid particle growth by coagulation in silane plasma reactor

Kyo-Seon Kim; Dong-Joo Kim

J. Appl. Phys. 87, 2691–2699 (2000) https://doi.org/10.1063/1.372243

Abstract

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A Monte-Carlo model of xenon resonance radiation transport in a plasma display panel cell: Transition from optically thick to thin regimes

Trudy van der Straaten; Mark J. Kushner

J. Appl. Phys. 87, 2700–2707 (2000) https://doi.org/10.1063/1.372244

Abstract

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Impact of magnetic fields on the spatial relaxation of electrons

R. Winkler; V. A. Maiorov; F. Sigeneger

J. Appl. Phys. 87, 2708–2718 (2000) https://doi.org/10.1063/1.372245

Abstract

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Surface loss probabilities of hydrocarbon radicals on amorphous hydrogenated carbon film surfaces

C. Hopf; T. Schwarz-Selinger; W. Jacob; A. von Keudell

J. Appl. Phys. 87, 2719–2725 (2000) https://doi.org/10.1063/1.372246

Abstract

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Fully leaky guided wave determination of the polar anchoring energy of a homogeneously aligned nematic liquid crystal

Fuzi Yang; J. R. Sambles; Youmei Dong; Hongjin Gao

J. Appl. Phys. 87, 2726–2735 (2000) https://doi.org/10.1063/1.372247

Abstract

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High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering

M. Kuball; J. M. Hayes; T. Suski; J. Jun; M. Leszczynski; J. Domagala; H. H. Tan; J. S. Williams; C. Jagadish

J. Appl. Phys. 87, 2736–2741 (2000) https://doi.org/10.1063/1.372248

Abstract

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Electronic excitation induced mass transport on 200 MeV ${}^{107}F^{+14}$ ion irradiated Si surface

J. P. Singh; R. Singh; D. Kanjilal; N. C. Mishra; V. Ganesan

J. Appl. Phys. 87, 2742–2746 (2000) https://doi.org/10.1063/1.372249

Abstract

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Calculation of the contribution to grain boundary diffusion in ionic systems that arises from enhanced defect concentrations adjacent to the boundary

Yong-Chae Chung; Chang Kyung Kim; Bernhardt J. Wuensch

J. Appl. Phys. 87, 2747–2752 (2000) https://doi.org/10.1063/1.372250

Abstract

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Neutron diffraction study of mechanically alloyed and in situ annealed ${Al}_{75} {Mo}_{25}$ powders

S. Enzo; R. Frattini; P. Canton; M. Monagheddu; F. Delogu

J. Appl. Phys. 87, 2753–2759 (2000) https://doi.org/10.1063/1.372251

Abstract

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Retarded C54 transformation and suppressed agglomeration by precipitates in ${TiSi}_{2}$ films

You-Seok Suh; Dae-Gyu Park; Se-Aug Jang; Sang-Hyeob Lee; Tae-Kyun Kim; In-Seok Yeo; Sam-Dong Kim; Chung-Tae Kim

J. Appl. Phys. 87, 2760–2764 (2000) https://doi.org/10.1063/1.372252

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The use of strain gauges in the measurement of the $B1/B2$ phase transformation in shock-loaded potassium chloride

J. C. F. Millett; N. K. Bourne; S. D. Galbraith; Z. Rosenberg

J. Appl. Phys. 87, 2765–2768 (2000) https://doi.org/10.1063/1.372253

Abstract

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Elastic properties of a unidirectional ${SiC}_{f} / Ti$ composite: Acoustic-resonance measurements and micromechanics predictions

Hirotsugu Ogi; Martin L. Dunn; Kazuki Takashima; Hassel Ledbetter

J. Appl. Phys. 87, 2769–2774 (2000) https://doi.org/10.1063/1.372254

Abstract

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High-spatial-resolution quantum-well intermixing process in GaInAs/GaInAsP laser structure using pulsed-photoabsorption-induced disordering

T. K. Ong; O. Gunawan; B. S. Ooi; Y. L. Lam; Y. C. Chan; Y. Zhou; A. Saher Helmy; J. H. Marsh

J. Appl. Phys. 87, 2775–2779 (2000) https://doi.org/10.1063/1.372255

Abstract

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Nordheim dependence in the surface resistivity of disordered overlayers

P. J. Rous

J. Appl. Phys. 87, 2780–2784 (2000) https://doi.org/10.1063/1.372256

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Experimental verification of prediction method for electromigration failure of polycrystalline lines

Kazuhiko Sasagawa; Kazushi Naito; Hiroki Kimura; Masumi Saka; Hiroyuki Abé

J. Appl. Phys. 87, 2785–2791 (2000) https://doi.org/10.1063/1.372257

Abstract

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Microtexture and electromigration-induced drift in electroplated damascene Cu

J. Proost; T. Hirato; T. Furuhara; K. Maex; J.-P. Celis

J. Appl. Phys. 87, 2792–2802 (2000) https://doi.org/10.1063/1.372258

Abstract

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Nanotribology of polymer blends

Yasuhiko Terada; Masashi Harada; Takayuki Ikehara; Toshio Nishi

J. Appl. Phys. 87, 2803–2807 (2000) https://doi.org/10.1063/1.372259

Abstract

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Formation and characteristics of silicon nanocrystals in plasma-enhanced chemical-vapor-deposited silicon-rich oxide

Chi-Fa Lin; Wei-Tsu Tseng; Ming Shiann Feng

J. Appl. Phys. 87, 2808–2815 (2000) https://doi.org/10.1063/1.372260

Abstract

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Surface-energy-driven intermixing and its effect on the measurement of interface stress

B. M. Clemens; W. D. Nix; V. Ramaswamy

J. Appl. Phys. 87, 2816–2820 (2000) https://doi.org/10.1063/1.372261

Abstract

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Sequential formation of quasicrystalline and amorphous phases in the Fe–Nb and Fe–Ta multilayers upon ion irradiation

C. Lin; G. W. Yang; B. X. Liu

J. Appl. Phys. 87, 2821–2824 (2000) https://doi.org/10.1063/1.372262

Abstract

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Structural and electrical characterization of epitaxial, large area ferroelectric films of ${Ba}_{2} {Bi}_{4} {Ti}_{5} O_{18}$ grown by pulsed excimer laser ablation

A. R. James; A. Pignolet; D. Hesse; U. Gösele

J. Appl. Phys. 87, 2825–2829 (2000) https://doi.org/10.1063/1.372263

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Epitaxial growth of wurtzite GaN on Si(111) by a vacuum reactive evaporation

Haoxiang Zhang; Zhizhen Ye; Binghui Zhao

J. Appl. Phys. 87, 2830–2834 (2000) https://doi.org/10.1063/1.372264

Abstract

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Microstructure of columnar crystallites in ${Ni}_{80} {Fe}_{20} /Cu$ magnetic multilayers

H. P. Sun; Z. Zhang; W. D. Wang; H. W. Jiang; W. Y. Lai

J. Appl. Phys. 87, 2835–2839 (2000) https://doi.org/10.1063/1.372265

Abstract

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Inductively coupled plasma assisted deposition and mechanical properties of metal-free and Ti-containing hydrocarbon coatings

W. J. Meng; E. I. Meletis; L. E. Rehn; P. M. Baldo

J. Appl. Phys. 87, 2840–2848 (2000) https://doi.org/10.1063/1.372266

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Theoretical studies of nonlinear optical properties of compounds $K_{4} {Ln}_{2} {(CO}_{3})_{3} F_{4}$ (Ln=Pr, Nd, Sm, Eu, Gd)

D. Xue; K. Betzler; H. Hesse; D. Lammers; S. Zhang

J. Appl. Phys. 87, 2849–2852 (2000) https://doi.org/10.1063/1.372267

Abstract

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Resonant Raman scattering from buried ${Al}_{x} {Ga}_{1−x} N$ $(x⩽0.17)$ layers in $(Al, Ga, In)N$ heterostructures

M. Yoshikawa; J. Wagner; H. Obloh; M. Kunzer; M. Maier

J. Appl. Phys. 87, 2853–2856 (2000) https://doi.org/10.1063/1.372268

Abstract

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Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate

Yoshitaka Ohiso; Chikara Amano

J. Appl. Phys. 87, 2857–2866 (2000) https://doi.org/10.1063/1.372269

Abstract

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Simulation of negative-effective-mass terahertz oscillators

J. C. Cao; H. C. Liu; X. L. Lei

J. Appl. Phys. 87, 2867–2873 (2000) https://doi.org/10.1063/1.372270

Abstract

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Optical and electrical properties of nitrogen incorporated amorphous carbon films

Y. H. Yu; Z. Y. Chen; E. Z. Luo; W. Y. Cheung; J. P. Zhao; X. Wang; J. B. Xu; S. P. Wong; I. H. Wilson

J. Appl. Phys. 87, 2874–2879 (2000) https://doi.org/10.1063/1.372271

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Evaluation of residual stresses in chemical-vapor-deposited diamond films

Qi Hua Fan; J. Grácio; E. Pereira

J. Appl. Phys. 87, 2880–2884 (2000) https://doi.org/10.1063/1.372272

Abstract

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Reversible variation of donor concentrations in high-purity InP by thermal treatment

Eishi Kubota; Koshi Ando; Syoji Yamada

J. Appl. Phys. 87, 2885–2889 (2000) https://doi.org/10.1063/1.372273

Abstract

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Empirical low-field mobility model for III–V compounds applicable in device simulation codes

M. Sotoodeh; A. H. Khalid; A. A. Rezazadeh

J. Appl. Phys. 87, 2890–2900 (2000) https://doi.org/10.1063/1.372274

Abstract

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Modulated photoconductivity study of electron drift mobility in amorphous silicon

K. Hattori; M. Iida; T. Hirao; H. Okamoto

J. Appl. Phys. 87, 2901–2909 (2000) https://doi.org/10.1063/1.372275

Abstract

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Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon

L. S. Robertson; K. S. Jones; L. M. Rubin; J. Jackson

J. Appl. Phys. 87, 2910–2913 (2000) https://doi.org/10.1063/1.372276

Abstract

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Electrical conductivity effects in polyethylene terephthalate films

E. Neagu; P. Pissis; L. Apekis

J. Appl. Phys. 87, 2914–2922 (2000) https://doi.org/10.1063/1.372277

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Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature

Y. H. Chen; Z. G. Wang; Z. Yang

J. Appl. Phys. 87, 2923–2925 (2000) https://doi.org/10.1063/1.372278

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Raman scattering from Ge nanostructures grown on Si substrates: Power and limitations

A. V. Kolobov

J. Appl. Phys. 87, 2926–2930 (2000) https://doi.org/10.1063/1.372279

Abstract

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Schottky barrier studies on single crystal ZnTe and determination of interface index

S. Bhunia; D. N. Bose

J. Appl. Phys. 87, 2931–2935 (2000) https://doi.org/10.1063/1.372280

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Intersubband electroabsorption spectra of semiconductor quantum wells

David M.-T. Kuo; Yia-Chung Chang

J. Appl. Phys. 87, 2936–2940 (2000) https://doi.org/10.1063/1.372281

Abstract

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Pressure sensors based on silicon doped GaAs–AlAs superlattices

J. L. Robert; F. Bosc; J. Sicart; V. Mosser; J. Lasseur

J. Appl. Phys. 87, 2941–2946 (2000) https://doi.org/10.1063/1.372282

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Multiquantum well gain modeling using a Green’s function-based fractional dimensional approach

M. Vallone; D. Campi; C. Cacciatore

J. Appl. Phys. 87, 2947–2955 (2000) https://doi.org/10.1063/1.372283

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Optical properties of InGaAs/InAIAs diffused double quantum wells

Wallace C. H. Choy

J. Appl. Phys. 87, 2956–2966 (2000) https://doi.org/10.1063/1.372284

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Mechanism for the generation of interface state precursors

J. F. Zhang; H. K. Sii; R. Degraeve; G. Groeseneken

J. Appl. Phys. 87, 2967–2977 (2000) https://doi.org/10.1063/1.372285

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Transport properties of high- $T_{c}$ planar Josephson junctions fabricated by nanolithography and ion implantation

A. S. Katz; S. I. Woods; R. C. Dynes

J. Appl. Phys. 87, 2978–2983 (2000) https://doi.org/10.1063/1.372286

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Terahertz surface resistance of high temperature superconducting thin films

I. Wilke; M. Khazan; C. T. Rieck; P. Kuzel; T. Kaiser; C. Jaekel; H. Kurz

J. Appl. Phys. 87, 2984–2988 (2000) https://doi.org/10.1063/1.372287

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Interface reactions between quaternary cobalt alloys and carbon coating in thin film disk media

J.-U. Thiele; D. J. Pocker; R. L. White

J. Appl. Phys. 87, 2989–2993 (2000) https://doi.org/10.1063/1.372288

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Investigation of the influence of edge structure on the micromagnetic behavior of small magnetic elements

M. Herrmann; S. McVitie; J. N. Chapman

J. Appl. Phys. 87, 2994–2999 (2000) https://doi.org/10.1063/1.372289

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Analytic model of direct tunnel current through ultrathin gate oxides

Khairurrijal; W. Mizubayashi; S. Miyazaki; M. Hirose

J. Appl. Phys. 87, 3000–3005 (2000) https://doi.org/10.1063/1.372290

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Effect of annealing in reduced oxygen pressure on the electrical transport properties of epitaxial thin film and bulk $({La}_{1−x} {Nd}_{x})_{0.7} {Sr}_{0.3} {MnO}_{3}$

Wenbin Wu; K. H. Wong; X.-G. Li; C. L. Choy; Y. H. Zhang

J. Appl. Phys. 87, 3006–3010 (2000) https://doi.org/10.1063/1.372291

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Magnetostriction study of structural and magnetic transitions in ${La}_{1−x} {Sr}_{x} {MnO}_{3}$ $(0.1<x<0.2)$

B. Dabrowski; L. Gladczuk; A. Wisniewski; Z. Bukowski; R. Dybzinski; A. Szewczyk; M. Gutowska; S. Kolesnik; C. W. Kimball; H. Szymczak

J. Appl. Phys. 87, 3011–3017 (2000) https://doi.org/10.1063/1.372292

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Magnetic properties of mesoscopic ultrathin magnetic films with uniaxial anisotropy

J. Sasaki; F. Matsubara

J. Appl. Phys. 87, 3018–3022 (2000) https://doi.org/10.1063/1.372293

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Interfacial roughness effects on interlayer coupling in spin valves grown on different seed layers

D. C. Parks; P. J. Chen; W. F. Egelhoff, Jr.; Romel D. Gomez

J. Appl. Phys. 87, 3023–3026 (2000) https://doi.org/10.1063/1.372390

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Nonlinear behavior of magnetostrictive particle actuated composite materials

William D. Armstrong

J. Appl. Phys. 87, 3027–3031 (2000) https://doi.org/10.1063/1.372294

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Domain nucleation processes in mesoscopic ${Ni}_{80} {Fe}_{20}$ wire junctions

W. Y. Lee; C. C. Yao; A. Hirohata; Y. B. Xu; H. T. Leung; S. M. Gardiner; S. McPhail; B. C. Choi; D. G. Hasko; J. A. C. Bland

J. Appl. Phys. 87, 3032–3036 (2000) https://doi.org/10.1063/1.372295

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Antiferromagnetic correlations in Fe–Cu granular alloys: The role of the surface structure

Xavier Batlle; Chuck J. Echer; E. Chris Nelson; Kannan M. Krishnan; Bart Jan Hattink

J. Appl. Phys. 87, 3037–3043 (2000) https://doi.org/10.1063/1.372296

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Influence of strain on microwave dielectric properties of $(Ba,Sr) {TiO}_{3}$ thin films

Wontae Chang; Charles M. Gilmore; Won-Jeong Kim; Jeffrey M. Pond; Steven W. Kirchoefer; Syed B. Qadri; Douglas B. Chirsey; James S. Horwitz

J. Appl. Phys. 87, 3044–3049 (2000) https://doi.org/10.1063/1.372297

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Aging behavior and recovery of polarization in ${Sr}_{0.8} {Bi}_{2.4} {Ta}_{2} O_{9}$ thin films

San-Yuan Chen; Ving-Ching Lee

J. Appl. Phys. 87, 3050–3055 (2000) https://doi.org/10.1063/1.372298

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Impact of microstructure on the electrical stress induced effects of pulsed laser ablated ${(Ba, Sr)TiO}_{3}$ thin films

S. Saha; S. B. Krupanidhi

J. Appl. Phys. 87, 3056–3062 (2000) https://doi.org/10.1063/1.372299

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DEVICE PHYSICS (PACS 85)

Effect of ion induced damage on carrier lifetimes in strained CdZnSe/ZnSe quantum wells

L. M. Sparing; A. M. Mintairov; J. H. Hodak; I. B. Martini; G. V. Hartland; U. Bindley; S. Lee; J. K. Furdyna; J. L. Merz; G. L. Snider

J. Appl. Phys. 87, 3063–3067 (2000) https://doi.org/10.1063/1.372300

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Micromagnetic studies of read and write process in magnetoresistive random access memory

Dan Wei; C. K. Ong; Zheng Yang

J. Appl. Phys. 87, 3068–3073 (2000) https://doi.org/10.1063/1.372301

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Regional approximation approach to space charge limited tunneling injection in polymeric devices

M. Koehler; I. A. Hümmelgen

J. Appl. Phys. 87, 3074–3079 (2000) https://doi.org/10.1063/1.372302

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Semitransparent cathodes for organic light emitting devices

P. E. Burrows; G. Gu; S. R. Forrest; E. P. Vicenzi; T. X. Zhou

J. Appl. Phys. 87, 3080–3085 (2000) https://doi.org/10.1063/1.372303

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Comparison of nonlinear and nonstationary response of conventional and resonant cavity enhanced p-i-n photodiode

Petar S. Matavulj; Dušan S. Golubović; Jovan B. Radunović

J. Appl. Phys. 87, 3086–3092 (2000) https://doi.org/10.1063/1.372304

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Radiative deformation

V. S. Arpaci; A. Esmaeeli

J. Appl. Phys. 87, 3093–3100 (2000) https://doi.org/10.1063/1.372239

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Platinum–aluminum nitride–silicon carbide diodes as combustible gas sensors

A. Samman; S. Gebremariam; L. Rimai; X. Zhang; J. Hangas; G. W. Auner

J. Appl. Phys. 87, 3101–3107 (2000) https://doi.org/10.1063/1.372305

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Shear force interaction in the viscous damping regime studied at 100 pN force resolution

J. U. Schmidt; H. Bergander; L. M. Eng

J. Appl. Phys. 87, 3108–3112 (2000) https://doi.org/10.1063/1.372306

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Ultrasonic microspectroscopy characterization of silica glass

Jun-ichi Kushibiki; Ting-Cun Wei; Yuji Ohashi; Akira Tada

J. Appl. Phys. 87, 3113–3121 (2000) https://doi.org/10.1063/1.372307

Abstract

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Theoretical study of three dimensional elastic band gaps with the finite-difference time-domain method

M. M. Sigalas; N. Garcı́a

J. Appl. Phys. 87, 3122–3125 (2000) https://doi.org/10.1063/1.372308

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Low threshold field emission from nanoclustered carbon grown by cathodic arc

B. S. Satyanarayana; J. Robertson; W. I. Milne

J. Appl. Phys. 87, 3126–3131 (2000) https://doi.org/10.1063/1.372309

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Photon emission from metals under fast nondestructive loading

Klara B. Abramova; Alexandr I. Rusakov; Alexandr A. Semenov; Igor P. Shcherbakov

J. Appl. Phys. 87, 3132–3136 (2000) https://doi.org/10.1063/1.372310

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Evolution of the microstructure in microcrystalline silicon prepared by very high frequency glow-discharge using hydrogen dilution

E. Vallat-Sauvain; U. Kroll; J. Meier; A. Shah; J. Pohl

J. Appl. Phys. 87, 3137–3142 (2000) https://doi.org/10.1063/1.372311

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Transitions from nanoscale to microscale dynamic friction mechanisms on polyethylene and silicon surfaces

S. Niederberger; D. H. Gracias; K. Komvopoulos; G. A. Somorjai

J. Appl. Phys. 87, 3143–3150 (2000) https://doi.org/10.1063/1.372312

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Anodic metal matrix removal rate in electrolytic in-process dressing I: Two-dimensional modeling

Hong Chen; James C. M. Li

J. Appl. Phys. 87, 3151–3158 (2000) https://doi.org/10.1063/1.372313

Abstract

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Anodic metal matrix removal rate in electrolytic in-process dressing II: Protrusion effect and three-dimensional modeling

Hong Chen; James C. M. Li

J. Appl. Phys. 87, 3159–3164 (2000) https://doi.org/10.1063/1.372314

Abstract

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COMMUNICATIONS

Multimode transport in a T-shaped quantum transistor

J. Appenzeller; Ch. Schroer

J. Appl. Phys. 87, 3165–3167 (2000) https://doi.org/10.1063/1.372315

Abstract

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Optical band gap of the filled tetrahedral semiconductor LiMgAs

K. Kuriyama; K. Kushida

J. Appl. Phys. 87, 3168–3170 (2000) https://doi.org/10.1063/1.372316

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Magnetic domain confinement using nonplanar substrates

N. K. Patel; M. Pepper

J. Appl. Phys. 87, 3171–3173 (2000) https://doi.org/10.1063/1.372317

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Enlargement of nontransmission frequency range in photonic crystals by using multiple heterostructures

Chun Zhang; Feng Qiao; Jun Wan; Jian Zi

J. Appl. Phys. 87, 3174–3176 (2000) https://doi.org/10.1063/1.372318

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Does normal boiling exist due to laser-pulse or ion bombardment?

Roger Kelly; Antonio Miotello

J. Appl. Phys. 87, 3177–3179 (2000) https://doi.org/10.1063/1.372319

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Interferometric measurement of gas densities behind the shock front of a laser-triggered air spark in the nanosecond regime

Reza A. Najaf-Zadeh

J. Appl. Phys. 87, 3180–3182 (2000) https://doi.org/10.1063/1.372320

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Mechanism of enhanced quantum efficiency in light-emitting diode based on a poly(p-phenylenevinylene) derivative

Jae Won Jang; Dong Keun Oh; Chang Hoon Lee; Cheol Eui Lee; Dong Won Lee; Jung-Il Jin

J. Appl. Phys. 87, 3183–3185 (2000) https://doi.org/10.1063/1.372321

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Anomalous internal friction in lead metaniobate ceramics

Lian-Xing He; Cheng-En Li; Hai-Xue Yan; Ting-Guo Chen

J. Appl. Phys. 87, 3186–3188 (2000) https://doi.org/10.1063/1.372322

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ERRATA

Erratum: “Double-barrier THz source based on electrical excitation of electrons and holes” [J. Appl. Phys. 86, 5215 (1999)]

F. A. Buot; C. M. Krowne

J. Appl. Phys. 87, 3189 (2000) https://doi.org/10.1063/1.372323

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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