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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Effects of plasma emission on optical properties of phosphor layers in surface-type alternate current plasma display panel

Sang-Hun Jang; Heung-Sik Tae; Jeong-Hae Lee; Kyung Cheol Choi

J. Appl. Phys. 87, 2073–2075 (2000) https://doi.org/10.1063/1.372158

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Small signal analysis of frequency response of four-wave mixing in semiconductor optical amplifiers

Chiming Wu; Honglei Fan; Niloy K. Dutta

J. Appl. Phys. 87, 2076–2078 (2000) https://doi.org/10.1063/1.372140

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Power self-regulation in double-pass high-gain laser amplifiers

Lee W. Casperson; Janet M. Casperson

J. Appl. Phys. 87, 2079–2083 (2000) https://doi.org/10.1063/1.372141

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Opto-dielectric effect on a nematic liquid crystal doped with a photoactive azo mesogen

Geetha G. Nair; S. Krishna Prasad; C. V. Yelamaggad

J. Appl. Phys. 87, 2084–2089 (2000) https://doi.org/10.1063/1.372142

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Observation of the resonant optical interactions in active dielectric cylinder

Soung-soo Yi; Oscar M. Stafsudd

J. Appl. Phys. 87, 2090–2094 (2000) https://doi.org/10.1063/1.372143

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Intervalence band absorption loss coefficients of the active layer for InP-based long wavelength laser diodes

Syouichi Kakimoto; Hitoshi Watanabe

J. Appl. Phys. 87, 2095–2097 (2000) https://doi.org/10.1063/1.372144

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${Nd}^{3+}$ -doped fluoroaluminate glasses for a 1.3 μm amplifier

M. Naftaly; A. Jha

J. Appl. Phys. 87, 2098–2104 (2000) https://doi.org/10.1063/1.372145

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Optical storage effect due to photopolymerization of mesogenic twin molecules

A. Hoischen; H.-S. Kitzerow; K. Kürschner; P. Strohriegl

J. Appl. Phys. 87, 2105–2109 (2000) https://doi.org/10.1063/1.372146

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Anisotropic fundamental absorption edge of ${KTiOPO}_{4}$ crystals

A. Dudelzak; P.-P. Proulx; V. Denks; V. Mürk; V. Nagirnyi

J. Appl. Phys. 87, 2110–2113 (2000) https://doi.org/10.1063/1.372147

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Time-resolved measurements of ion energy distributions and optical emissions in pulsed radio-frequency discharges

Yicheng Wang; Eric C. Benck; Martin Misakian; Manabu Edamura; James K. Olthoff

J. Appl. Phys. 87, 2114–2121 (2000) https://doi.org/10.1063/1.372148

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Mechanism of forward development of a plasma produced by an excimer laser in high-pressure argon gases

Norio Tsuda; Jun Yamada

J. Appl. Phys. 87, 2122–2126 (2000) https://doi.org/10.1063/1.372149

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Appearance of toroidal structure in dissipating laser-generated sparks

D. Nassif; L. Hüwel

J. Appl. Phys. 87, 2127–2130 (2000) https://doi.org/10.1063/1.372150

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

X-ray diffraction investigation of the low temperature thermal expansion of porous silicon

C. Faivre; D. Bellet; G. Dolino

J. Appl. Phys. 87, 2131–2136 (2000) https://doi.org/10.1063/1.372151

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Generation of second harmonics in Ge-doped ${SiO}_{2}$ thin films by ultraviolet irradiation under poling electric field

J. Khaled; T. Fujiwara; M. Ohama; A. J. Ikushima

J. Appl. Phys. 87, 2137–2141 (2000) https://doi.org/10.1063/1.372152

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Effect of Fe and Zr ion implantation and high-current electron irradiation treatment on chemical and mechanical properties of Ti–V–Al Alloy

Alexander D. Pogrebnjak; Alexander P. Kobzev; Boris P. Gritsenko; Sergey Sokolov; Elena Bazyl; Nikolai V. Sviridenko; Alexander N. Valyaev; Yurii F. Ivanov

J. Appl. Phys. 87, 2142–2148 (2000) https://doi.org/10.1063/1.372153

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Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery

C. Ronning; M. Dalmer; M. Uhrmacher; M. Restle; U. Vetter; L. Ziegeler; H. Hofsäss; T. Gehrke; K. Järrendahl; R. F. Davis; ISOLDE Collaboration

J. Appl. Phys. 87, 2149–2157 (2000) https://doi.org/10.1063/1.372154

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Cavities and dislocations induced in silicon by MeV He implantation

S. Godey; T. Sauvage; E. Ntsoenzok; H. Erramli; M. F. Beaufort; J. F. Barbot; B. Leroy

J. Appl. Phys. 87, 2158–2161 (2000) https://doi.org/10.1063/1.372155

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Evolution of defect complexes in silicon single crystals with heavy fluence 10 MeV proton irradiation

Aurangzeb Khan; Masafumi Yamaguchi; Tadashi Hisamatsu; Sumio Matsuda

J. Appl. Phys. 87, 2162–2168 (2000) https://doi.org/10.1063/1.372156

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Microstructure and optical properties of submicron porous silicon thin films grown at low current densities

David W. Riley; Rosario A. Gerhardt

J. Appl. Phys. 87, 2169–2177 (2000) https://doi.org/10.1063/1.372157

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Segregation effects of Li, K, and F in Si during depth profiling by oxygen ions

Prakash N. K. Deenapanray; Mladen Petravic

J. Appl. Phys. 87, 2178–2184 (2000) https://doi.org/10.1063/1.372159

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A high energy x-ray and neutron scattering study of iron phosphate glasses containing uranium

M. Karabulut; G. K. Marasinghe; C. S. Ray; G. D. Waddill; D. E. Day; Y. S. Badyal; M.-L. Saboungi; S. Shastri; D. Haeffner

J. Appl. Phys. 87, 2185–2193 (2000) https://doi.org/10.1063/1.372160

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Constriction energy in the presence of a solute field

Scott D. Andrews; Huseyin Sehitoglu; Ibrahim Karaman

J. Appl. Phys. 87, 2194–2203 (2000) https://doi.org/10.1063/1.372161

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Dissociation of dilute immiscible copper alloy thin films

K. Barmak; G. A. Lucadamo; C. Cabral, Jr.; C. Lavoie; J. M. E. Harper

J. Appl. Phys. 87, 2204–2214 (2000) https://doi.org/10.1063/1.372162

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Compression-induced effect on the electronic structure of cyclotrimethylene trinitramine containing an edge dislocation

Maija M. Kuklja; A. Barry Kunz

J. Appl. Phys. 87, 2215–2218 (2000) https://doi.org/10.1063/1.372163

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Stress, resistance, and phase transitions in NiCr(60 wt %) thin films

W. Brückner; W. Pitschke; J. Thomas; G. Leitner

J. Appl. Phys. 87, 2219–2226 (2000) https://doi.org/10.1063/1.372164

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Transmission electron microscopy study of hydrogen-induced degradation in strontium bismuth tantalate thin films

N. Poonawala; V. P. Dravid; O. Auciello; J. Im; A. R. Krauss

J. Appl. Phys. 87, 2227–2231 (2000) https://doi.org/10.1063/1.372165

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Texture development of blanket electroplated copper films

C. Lingk; M. E. Gross; W. L. Brown

J. Appl. Phys. 87, 2232–2236 (2000) https://doi.org/10.1063/1.372166

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Phase formation and electrical resistivity of ultrahigh vacuum deposited Cu thin films on epitaxial Si–Ge layers on Si and Ge

J. B. Lai; L. J. Chen

J. Appl. Phys. 87, 2237–2244 (2000) https://doi.org/10.1063/1.372167

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Evolution of Ge/Si(100) islands: Island size and temperature dependence

S. A. Chaparro; Y. Zhang; Jeff Drucker; D. Chandrasekhar; David J. Smith

J. Appl. Phys. 87, 2245–2254 (2000) https://doi.org/10.1063/1.372168

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Characterization of arsenic dose loss at the ${Si/SiO}_{2}$ interface

Reza Kasnavi; Yun Sun; Renee Mo; Piero Pianetta; Peter B. Griffin; James D. Plummer

J. Appl. Phys. 87, 2255–2260 (2000) https://doi.org/10.1063/1.372169

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Nanoscale compositional fluctuations in multiple InGaAs/GaAs quantum wires

M. Catalano; A. Taurino; M. Lomascolo; L. Vasanelli; M. De Giorgi; A. Passaseo; R. Rinaldi; R. Cingolani; O. Mauritz; G. Goldoni; F. Rossi; E. Molinari; P. Crozier

J. Appl. Phys. 87, 2261–2264 (2000) https://doi.org/10.1063/1.372170

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Strains and stresses in multilayered elastic structures: The case of chemically vapor-deposited ZnS/ZnSe laminates

Claude A. Klein; Richard P. Miller

J. Appl. Phys. 87, 2265–2272 (2000) https://doi.org/10.1063/1.372171

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Atomistic simulations of low energy ion assisted vapor deposition of metal multilayers

X. W. Zhou; H. N. G. Wadley

J. Appl. Phys. 87, 2273–2281 (2000) https://doi.org/10.1063/1.372172

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Diffusion of implanted nitrogen in silicon

Lahir Shaik Adam; Mark E. Law; Kevin S. Jones; Omer Dokumaci; C. S. Murthy; Suri Hegde

J. Appl. Phys. 87, 2282–2284 (2000) https://doi.org/10.1063/1.372173

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Hydrogen plasma passivation of GaAs on Si substrates for solar cell fabrication

T. Soga; T. Jimbo; G. Wang; K. Ohtsuka; M. Umeno

J. Appl. Phys. 87, 2285–2288 (2000) https://doi.org/10.1063/1.372174

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Well-width dependence of the ground level emission of GaN/AlGaN quantum wells

A. Bonfiglio; M. Lomascolo; G. Traetta; R. Cingolani; A. Di Carlo; F. Della Sala; P. Lugli; A. Botchkarev; H. Morkoc

J. Appl. Phys. 87, 2289–2292 (2000) https://doi.org/10.1063/1.372175

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Photoluminescence, infrared reflectivity, and Raman spectra of the ordered vacancy compound ${CuGa}_{3} {Se}_{5}$

C. Rincón; S. M. Wasim; G. Marı́n; E. Hernández; G. Sanchez Perez; J. Galibert

J. Appl. Phys. 87, 2293–2296 (2000) https://doi.org/10.1063/1.372176

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Electroluminescence of different colors from polycation/CdTe nanocrystal self-assembled films

Mingyuan Gao; Constanze Lesser; Stefan Kirstein; Helmuth Möhwald; Andrey L. Rogach; Horst Weller

J. Appl. Phys. 87, 2297–2302 (2000) https://doi.org/10.1063/1.372177

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Band edge and phonon-assisted deep level emissions in the ordered filled tetrahedral semiconductor LiMgP

K. Kuriyama; K. Kushida

J. Appl. Phys. 87, 2303–2306 (2000) https://doi.org/10.1063/1.372178

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Irreversibility of zero-field birefringence in ferrofluids upon temperature reversal

A. F. Bakuzis; M. F. Da Silva; P. C. Morais; K. Skeff Neto

J. Appl. Phys. 87, 2307–2311 (2000) https://doi.org/10.1063/1.372179

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Morphotropic domain structures and phase transitions in relaxor-based piezo-/ferroelectric $(1−x) {Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3} −x {PbTiO}_{3}$ single crystals

Z.-G. Ye; M. Dong

J. Appl. Phys. 87, 2312–2319 (2000) https://doi.org/10.1063/1.372180

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Optical properties and heterojunction band alignment in fully coherent strain-compensated ${InAs}_{x} P_{1−x} / {Ga}_{y} {In}_{1−y} P$ multilayers on InP(001)

M. Beaudoin; P. Desjardins; A. Aı̈t-Ouali; J. L. Brebner; R. Y.-F. Yip; H. Marchand; L. Isnard; R. A. Masut

J. Appl. Phys. 87, 2320–2326 (2000) https://doi.org/10.1063/1.372181

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Hypersonic and dielectric properties of $({PbZn}_{1/3} {Nb}_{2/3} O_{3})_{0.915} {–(PbTiO}_{3})_{0.085}$ single crystal

Chi-Shun Tu; C.-L. Tsai

J. Appl. Phys. 87, 2327–2330 (2000) https://doi.org/10.1063/1.372182

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Electrorefraction in strained InGaAs/InP chopped quantum wells: Significance of the interface layers

B. H. P. Dorren; A. Yu. Silov; M. R. Leys; J. E. M. Haverkort; J. H. Wolter

J. Appl. Phys. 87, 2331–2335 (2000) https://doi.org/10.1063/1.372183

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Photoreflectance studies of Te-doped GaSb at the $E_{} {+Δ}_{}$ transition

S. Iyer; S. Mulugeta; W. Collis; S. Venkatraman; K. K. Bajaj; G. Coli

J. Appl. Phys. 87, 2336–2339 (2000) https://doi.org/10.1063/1.372184

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Cross phase modulation artifact in liquid phase transient absorption spectroscopy

K. Ekvall; P. van der Meulen; C. Dhollande; L.-E. Berg; S. Pommeret; R. Naskrecki; J.-C. Mialocq

J. Appl. Phys. 87, 2340–2352 (2000) https://doi.org/10.1063/1.372185

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Photocurrent study of molecular beam epitaxy GaAs grown at low temperature

N. Hozhabri; J. C. Montoya; K. Alavi

J. Appl. Phys. 87, 2353–2356 (2000) https://doi.org/10.1063/1.372186

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Effects of phase separation and decomposition on the minority carrier diffusion length in ${Al}_{x} {Ga}_{1−x} N$ films

A. Cremades; M. Albrecht; J. Krinke; R. Dimitrov; M. Stutzmann; H. P. Strunk

J. Appl. Phys. 87, 2357–2362 (2000) https://doi.org/10.1063/1.372187

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Transport properties of polypyrrole–ferric oxide conducting nanocomposites

R. Gangopadhyay; A. De; S. Das

J. Appl. Phys. 87, 2363–2371 (2000) https://doi.org/10.1063/1.372188

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Microcontact impedance measurements of individual highly resistive grain boundaries: General aspects and application to acceptor-doped ${SrTiO}_{3}$

J. Fleig; S. Rodewald; J. Maier

J. Appl. Phys. 87, 2372–2381 (2000) https://doi.org/10.1063/1.372189

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Drude conductivity of highly doped GaAs at terahertz frequencies

P. G. Huggard; J. A. Cluff; G. P. Moore; C. J. Shaw; S. R. Andrews; S. R. Keiding; E. H. Linfield; D. A. Ritchie

J. Appl. Phys. 87, 2382–2385 (2000) https://doi.org/10.1063/1.372238

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Asymmetrical spin-polarized tunneling and magnetoresistance in ferromagnet/insulator/insulator/ferromagnet junctions

Hui-Ying Xu; Wen-Xue Yu; Jian Kang; Zhen-Hong Mai

J. Appl. Phys. 87, 2386–2393 (2000) https://doi.org/10.1063/1.372190

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Colossal magnetoresistance in ultrathin epitaxial ${La}_{0.75} {Sr}_{0.25} {MnO}_{3}$ films

S. I. Khartsev; P. Johnsson; A. M. Grishin

J. Appl. Phys. 87, 2394–2399 (2000) https://doi.org/10.1063/1.372191

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Asymmetry in the dark current low frequency noise characteristics of B–B and B–C quantum well infrared photodetectors from 10 to 80 K

P. Kolev; M. J. Deen; H. C. Liu; J. M. Li; M. Buchanan; Z. R. Wasilewski

J. Appl. Phys. 87, 2400–2407 (2000) https://doi.org/10.1063/1.372192

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Contactless thermally stimulated lifetime measurements in detector-grade cadmium zinc telluride

Royal Kessick; Gary Tepper; Ed Lee; Ralph James

J. Appl. Phys. 87, 2408–2412 (2000) https://doi.org/10.1063/1.372193

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Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films

S. A. Studenikin; Nickolay Golego; Michael Cocivera

J. Appl. Phys. 87, 2413–2421 (2000) https://doi.org/10.1063/1.372194

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Ballistic electron emission microscopy of $Au /n- ZnSe$ contacts and local density of states spectroscopy

A. Chahboun; R. Coratger; F. Ajustron; J. Beauvillain; I. M. Dharmadasa; A. P. Samantilleke

J. Appl. Phys. 87, 2422–2426 (2000) https://doi.org/10.1063/1.372195

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Change of microscopic tunneling on a macroscopic time scale: Current surge model

Danhong Huang; Anjali Singh; D. A. Cardimona

J. Appl. Phys. 87, 2427–2430 (2000) https://doi.org/10.1063/1.372196

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The grain size dependence of the resistance behaviors in doped lanthanum manganite polycrystalline films

Xiangdong Liu; Zhengkuan Jiao; Keikichi Nakamura; Takeshi Hatano; Yuewu Zeng

J. Appl. Phys. 87, 2431–2436 (2000) https://doi.org/10.1063/1.372197

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Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts

E. F. Chor; D. Zhang; H. Gong; W. K. Chong; S. Y. Ong

J. Appl. Phys. 87, 2437–2444 (2000) https://doi.org/10.1063/1.372198

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Optical phonon confinement in zinc oxide nanoparticles

M. Rajalakshmi; Akhilesh K. Arora; B. S. Bendre; Shailaja Mahamuni

J. Appl. Phys. 87, 2445–2448 (2000) https://doi.org/10.1063/1.372199

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High spatial density nanocrystal formation using thin layer of amorphous ${Si}_{0.7} {Ge}_{0.3}$ deposited on ${SiO}_{2}$

Tae-Sik Yoon; Jang-Yeon Kwon; Dong-Hoon Lee; Ki-Bum Kim; Seok-Hong Min; Dong-Hyuk Chae; Dae Hwan Kim; Jong Duk Lee; Byung-Gook Park; Hwack Joo Lee

J. Appl. Phys. 87, 2449–2453 (2000) https://doi.org/10.1063/1.372200

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Spatial variation of the current in grain boundary Josephson junctions

M. Carmody; B. H. Moeckly; K. L. Merkle; L. D. Marks

J. Appl. Phys. 87, 2454–2459 (2000) https://doi.org/10.1063/1.372201

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Screening technique measurement of ac imaginary susceptibility and critical current density of ${YBa}_{2} {Cu}_{3} O_{7−δ}$ films

C. R. Acosta; M. Acosta; Victor Sosa; O. Ares

J. Appl. Phys. 87, 2460–2463 (2000) https://doi.org/10.1063/1.372202

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Early stages of mechanical crystallization of amorphous FeZrBCu soft magnetic material

J. Friedrich; U. Herr; K. Samwer

J. Appl. Phys. 87, 2464–2468 (2000) https://doi.org/10.1063/1.372203

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Thermal degradation of spin valve multilayers caused by Mn migration

Masafumi Takiguchi; Satoru Ishii; Eiji Makino; Akihiko Okabe

J. Appl. Phys. 87, 2469–2471 (2000) https://doi.org/10.1063/1.372204

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Magnetic properties of mixed cobalt–zinc ferrite nanoparticles

J. F. Hochepied; M. P. Pileni

J. Appl. Phys. 87, 2472–2478 (2000) https://doi.org/10.1063/1.372205

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Structural, magnetotransport, and micromagnetic properties of sputtered Ir(111)/Co superlattices

Yuansu Luo; Birgit Pfeifer; Andrea Kaeufler; Michael Moske; Konrad Samwer

J. Appl. Phys. 87, 2479–2482 (2000) https://doi.org/10.1063/1.372206

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Interdiffusion up to the eutectic composition and vitrification in Gd/Co multilayers

J. P. Andrés; J. L. Sacedón; J. Colino; J. M. Riveiro

J. Appl. Phys. 87, 2483–2489 (2000) https://doi.org/10.1063/1.372207

Abstract

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Magnetic ordering and granularity effects in ${La}_{1−x} {Ba}_{x} {MnO}_{3}$

R. C. Budhani; Chaitali Roy; Laura H. Lewis; Qiang Li; A. R. Moodenbaugh

J. Appl. Phys. 87, 2490–2496 (2000) https://doi.org/10.1063/1.372208

Abstract

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Zero-field birefringence in magnetic fluids: Temperature, particle size, and concentration dependence

A. F. Bakuzis; M. F. Da Silva; P. C. Morais; L. S. F. Olavo; K. Skeff Neto

J. Appl. Phys. 87, 2497–2502 (2000) https://doi.org/10.1063/1.372209

Abstract

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La–Zn substituted hexagonal Sr ferrite thin films for high density magnetic recording

Xiaoxi Liu; Jianmin Bai; Fulin Wei; Hai Xu; Zheng Yang; S. N. Piramanayagam; Shigeto Takei; Akimitsu Morisako; Mitsunori Matsumoto

J. Appl. Phys. 87, 2503–2506 (2000) https://doi.org/10.1063/1.372210

Abstract

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Dielectric properties and field-induced phase switching of lead zirconate titanate stannate antiferroelectric thick films on silicon substrates

Baomin Xu; Yaohong Ye; L. Eric Cross

J. Appl. Phys. 87, 2507–2515 (2000) https://doi.org/10.1063/1.372211

Abstract

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Characterization of ${CaTiO}_{3}$ -modified ${Pb(Mg}_{1/3} {Nb}_{2/3} {)O}_{3}$ dielectrics

X. M. Chen; X. J. Lu

J. Appl. Phys. 87, 2516–2519 (2000) https://doi.org/10.1063/1.372212

Abstract

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DEVICE PHYSICS (PACS 85)

Influence of temperature on magnetism in a quantum confined system

Bi Qiao; H. E. Ruda; Qi Baihua

J. Appl. Phys. 87, 2520–2525 (2000) https://doi.org/10.1063/1.372213

Abstract

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Properties of ${Ga}_{1−x} {In}_{x} N$ mixed crystals and ${Ga}_{1−x} {In}_{x} N/GaN$ quantum wells

Ruisheng Zheng; Tsunemasa Taguchi; Mitsuru Matsuura

J. Appl. Phys. 87, 2526–2532 (2000) https://doi.org/10.1063/1.372214

Abstract

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Numerical simulation of the tunneling current and ballistic electron effects in field emission devices

L. R. C. Fonseca; Paul von Allmen; R. Ramprasad

J. Appl. Phys. 87, 2533–2541 (2000) https://doi.org/10.1063/1.372215

Abstract

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Interference effects in anisotropic optoelectronic devices

W. M. V. Wan; N. C. Greenham; R. H. Friend

J. Appl. Phys. 87, 2542–2547 (2000) https://doi.org/10.1063/1.372216

Abstract

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Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor

N. Cavassilas; F. Aniel; P. Boucaud; R. Adde; H. Maher; J. Décobert; A. Scavennec

J. Appl. Phys. 87, 2548–2552 (2000) https://doi.org/10.1063/1.372217

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Quantum transport in mesoscopic devices: Current conduction in quantum wire structures

A. Haque; A. N. Khondker

J. Appl. Phys. 87, 2553–2560 (2000) https://doi.org/10.1063/1.372218

Abstract

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The effect of humidity on probe-sample interactions in near-field scanning optical microscopy

P. K. Wei; W. S. Fann

J. Appl. Phys. 87, 2561–2564 (2000) https://doi.org/10.1063/1.372219

Abstract

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Intensity of a source of atomic hydrogen based on a hot capillary

K. G. Tschersich

J. Appl. Phys. 87, 2565–2573 (2000) https://doi.org/10.1063/1.372220

Abstract

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Thermal effects in pulsed laser assisted scanning tunneling microscopy

V. Gerstner; A. Thon; W. Pfeiffer

J. Appl. Phys. 87, 2574–2580 (2000) https://doi.org/10.1063/1.372221

Abstract

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The sputtering of radioactive recoil nuclides induced by fast neutron

Bangjiao Ye; Yoshimi Kasugai; Yujiro Ikeda; Yangmei Fan; Xianyi Zhou; Jiangfeng Du; Rongdian Han

J. Appl. Phys. 87, 2581–2586 (2000) https://doi.org/10.1063/1.372222

Abstract

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Negative ion production by surface ionization at aluminum-nitride surfaces

S. Jans; P. Wurz; R. Schletti; T. Fröhlich; E. Hertzberg; S. Fuselier

J. Appl. Phys. 87, 2587–2592 (2000) https://doi.org/10.1063/1.372223

Abstract

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In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films

E. Franke; M. Schubert; J. A. Woollam; J.-D. Hecht; G. Wagner; H. Neumann; F. Bigl

J. Appl. Phys. 87, 2593–2599 (2000) https://doi.org/10.1063/1.372224

Abstract

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Multiple scattering effects of thermal waves by two subsurface cylinders

J. M. Terrón; A. Sánchez-Lavega; A. Salazar

J. Appl. Phys. 87, 2600–2607 (2000) https://doi.org/10.1063/1.372225

Abstract

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Deposition mechanism of hydrogenated amorphous silicon

John Robertson

J. Appl. Phys. 87, 2608–2617 (2000) https://doi.org/10.1063/1.372226

Abstract

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Metal-organic chemical vapor deposition of single domain GaAs on ${Ge/Ge}_{x} {Si}_{1−x} / Si$ and Ge substrates

S. M. Ting; E. A. Fitzgerald

J. Appl. Phys. 87, 2618–2628 (2000) https://doi.org/10.1063/1.372227

Abstract

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Effect of crystal orientation and doping on the activation energy for GaAs oxide growth by liquid phase method

Hwei-Heng Wang; Dei-Wei Chou; Jau-Yi Wu; Yeong-Her Wang; Mau-Phon Houng

J. Appl. Phys. 87, 2629–2633 (2000) https://doi.org/10.1063/1.372228

Abstract

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Structure-enhanced yield stress of magnetorheological fluids

X. Tang; X. Zhang; R. Tao; Yiming Rong

J. Appl. Phys. 87, 2634–2638 (2000) https://doi.org/10.1063/1.372229

Abstract

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Recombination mechanisms in amorphous silicon/crystalline silicon heterojunction solar cells

N. Jensen; U. Rau; R. M. Hausner; S. Uppal; L. Oberbeck; R. B. Bergmann; J. H. Werner

J. Appl. Phys. 87, 2639–2645 (2000) https://doi.org/10.1063/1.372230

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COMMUNICATIONS

Asymmetric ionic adsorption and cell polarization in liquid crystals

G. Barbero; L. R. Evangelista; D. Olivero

J. Appl. Phys. 87, 2646–2648 (2000) https://doi.org/10.1063/1.372231

Abstract

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Polarization gain dependence of vertical-cavity surface-emitting lasers: Phenomenological modeling and experiments

Loig Plouzennec

J. Appl. Phys. 87, 2649–2651 (2000) https://doi.org/10.1063/1.372232

Abstract

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Half-point fields for microwave magnetoabsorption in colossal magnetoresistance manganite powders

S. I. Patil; S. E. Lofland; Q. Q. Shu; S. M. Bhagat

J. Appl. Phys. 87, 2652–2654 (2000) https://doi.org/10.1063/1.372233

Abstract

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Recrystallization and electrical properties of MeV P implanted 6H–SiC

Shinsuke Harada; Teruaki Motooka

J. Appl. Phys. 87, 2655–2657 (2000) https://doi.org/10.1063/1.372234

Abstract

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Phase transformation and conductivity in nanocrystal PbS under pressure

J. Z. Jiang; L. Gerward; R. Secco; D. Frost; J. S. Olsen; J. Truckenbrodt

J. Appl. Phys. 87, 2658–2660 (2000) https://doi.org/10.1063/1.372235

Abstract

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Diffusion of low-dose implanted aluminum in silicon in inert and dry $O_{2}$ ambient

Ch. Ortiz; D. Mathiot; Ch. Dubois; R. Jérisian

J. Appl. Phys. 87, 2661–2663 (2000) https://doi.org/10.1063/1.372236

Abstract

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Pressure effect on crystallization of metallic glass ${Fe}_{72} P_{11} C_{6} {Al}_{5} B_{4} {Ga}_{2}$ alloy with wide supercooled liquid region

J. Z. Jiang; J. S. Olsen; L. Gerward; S. Abdali; J. Eckert; N. Schlorke-de Boer; L. Schultz; J. Truckenbrodt; P. X. Shi

J. Appl. Phys. 87, 2664–2666 (2000) https://doi.org/10.1063/1.372237

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

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