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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Cavity detuning effects in semiconductor microcavity light emitting diodes

A. R. Pratt; T. Takamori; T. Kamijoh

J. Appl. Phys. 87, 8243–8250 (2000) https://doi.org/10.1063/1.373534

Abstract

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Controlling spontaneous generation of optical beam spots in a liquid crystal device

Yoshiki Iino; Peter Davis

J. Appl. Phys. 87, 8251–8258 (2000) https://doi.org/10.1063/1.373533

Abstract

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Electro-optic characteristics of 4-domain vertical alignment nematic liquid crystal display with interdigital electrode

S. H. Hong; Y. H. Jeong; H. Y. Kim; H. M. Cho; W. G. Lee; S. H. Lee

J. Appl. Phys. 87, 8259–8263 (2000) https://doi.org/10.1063/1.373535

Abstract

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Looping mechanism in Er-doped fluoroindogallate glasses

M. J. V. Bell; D. F. de Sousa; L. A. O. Nunes

J. Appl. Phys. 87, 8264–8267 (2000) https://doi.org/10.1063/1.373536

Abstract

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A nonorthogonal finite-difference time-domain method for computing the band structure of a two-dimensional photonic crystal with dielectric and metallic inclusions

Min Qiu; Sailing He

J. Appl. Phys. 87, 8268–8275 (2000) https://doi.org/10.1063/1.373537

Abstract

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Mathematical modeling of thermal runaway in semiconductor laser operation

W. R. Smith

J. Appl. Phys. 87, 8276–8285 (2000) https://doi.org/10.1063/1.373538

Abstract

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Modeling of the spectral response of ${Al}_{x} {Ga}_{1−x} N$ Schottky ultraviolet photodetectors

A. Bouhdada; M. Hanzaz; P. Gibart; F. Omnès; E. Monroy; E. Muñoz

J. Appl. Phys. 87, 8286–8290 (2000) https://doi.org/10.1063/1.373539

Abstract

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Thermally based light modulation through free-standing porous silicon film

Z. Gaburro; D. Babić

J. Appl. Phys. 87, 8291–8294 (2000) https://doi.org/10.1063/1.373540

Abstract

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Characterization of wire x pinches driven by a microsecond-long capacitive discharge

C. Christou; A. E. Dangor; D. A. Hammer

J. Appl. Phys. 87, 8295–8303 (2000) https://doi.org/10.1063/1.373541

Abstract

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Behavior of excited argon atoms in inductively driven plasmas

G. A. Hebner; P. A. Miller

J. Appl. Phys. 87, 8304–8315 (2000) https://doi.org/10.1063/1.373542

Abstract

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Structure of plasmas generated by the interaction between metallic ions and neutral gas particles in a low-pressure arc

H. Kelly; A. Lepone; F. Minotti

J. Appl. Phys. 87, 8316–8322 (2000) https://doi.org/10.1063/1.373543

Abstract

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Effect of metastable oxygen molecules in high density power-modulated oxygen discharges

Siddhartha Panda; Demetre J. Economou; M. Meyyappan

J. Appl. Phys. 87, 8323–8333 (2000) https://doi.org/10.1063/1.373544

Abstract

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Calculation of gas heating in direct current argon glow discharges

Annemie Bogaerts; Renaat Gijbels; Vladimir V. Serikov

J. Appl. Phys. 87, 8334–8344 (2000) https://doi.org/10.1063/1.373545

Abstract

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Effect of multiple current spikes on the enhancement of ion charge states of vacuum arc plasmas

George Yu. Yushkov; Efim M. Oks; André Anders; Ian G. Brown

J. Appl. Phys. 87, 8345–8350 (2000) https://doi.org/10.1063/1.373546

Abstract

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Composition of trench sidewalls and bottoms for ${SiO}_{2}$ -masked Si(100) etched in ${Cl}_{2}$ plasmas

K. H. A. Bogart; V. M. Donnelly

J. Appl. Phys. 87, 8351–8360 (2000) https://doi.org/10.1063/1.373547

Abstract

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Annealing behavior of hydrogen-defect complexes in carbon-doped Si quenched in hydrogen atmosphere

Naoki Fukata; Masashi Suezawa

J. Appl. Phys. 87, 8361–8367 (2000) https://doi.org/10.1063/1.373548

Abstract

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Defect identification in GaAs grown at low temperatures by positron annihilation

J. Gebauer; F. Börner; R. Krause-Rehberg; T. E. M. Staab; W. Bauer-Kugelmann; G. Kögel; W. Triftshäuser; P. Specht; R. C. Lutz; E. R. Weber; M. Luysberg

J. Appl. Phys. 87, 8368–8379 (2000) https://doi.org/10.1063/1.373549

Abstract

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Investigation of the interaction between silicon interstitials and dislocation loops using the wafer bonding technique

D. Tsoukalas; D. Skarlatos; J. Stoemenos

J. Appl. Phys. 87, 8380–8384 (2000) https://doi.org/10.1063/1.373550

Abstract

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Damage accumulation in Si crystal during ion implantation at elevated temperatures: Evidence of chemical effects

J. P. de Souza; Yu. Suprun-Belevich; H. Boudinov; C. A. Cima

J. Appl. Phys. 87, 8385–8388 (2000) https://doi.org/10.1063/1.373551

Abstract

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Influence of the dopant species on radiation-induced defects in Si single crystals

Aurangzeb Khan; Masafumi Yamaguchi; Minoru Kaneiwa; Tatsue Saga; Takao Abe; Osamu Annzawa; Sumio Matsuda

J. Appl. Phys. 87, 8389–8392 (2000) https://doi.org/10.1063/1.373552

Abstract

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Phase fields of nickel silicides obtained by mechanical alloying in the nanocrystalline state

M. K. Datta; S. K. Pabi; B. S. Murty

J. Appl. Phys. 87, 8393–8400 (2000) https://doi.org/10.1063/1.373553

Abstract

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Formation of voids in Ti-salicided ${BF}_{2}^{+}$ -doped submicron polysilicon lines

H. N. Chua; K. L. Pey; W. H. Lai; S. Y. Siah

J. Appl. Phys. 87, 8401–8406 (2000) https://doi.org/10.1063/1.373554

Abstract

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Thermal properties of ${Ti}_{4} {AlN}_{3}$

M. W. Barsoum; C. J. Rawn; T. El-Raghy; A. T. Procopio; W. D. Porter; H. Wang; C. R. Hubbard

J. Appl. Phys. 87, 8407–8414 (2000) https://doi.org/10.1063/1.373555

Abstract

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Kinetic aspects of the growth of hydrogen induced platelets in SiC

J. Grisolia; F. Cristiano; B. De Mauduit; G. Ben Assayag; F. Letertre; B. Aspar; L. Di Cioccio; A. Claverie

J. Appl. Phys. 87, 8415–8419 (2000) https://doi.org/10.1063/1.373556

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Formation energies and relative stability of perfect and faulted dislocation loops in silicon

F. Cristiano; J. Grisolia; B. Colombeau; M. Omri; B. de Mauduit; A. Claverie; L. F. Giles; N. E. B. Cowern

J. Appl. Phys. 87, 8420–8428 (2000) https://doi.org/10.1063/1.373557

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Direct imaging of end-of-range compaction in ion beam irradiated silica waveguides by atomic force microscopy

M. L. von Bibra; A. Roberts; P. Mulvaney; S. T. Huntington

J. Appl. Phys. 87, 8429–8432 (2000) https://doi.org/10.1063/1.373558

Abstract

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Unstable states of antiferroelectric liquid crystal devices

L. A. Judge; R. Beccherelli; S. J. Elston

J. Appl. Phys. 87, 8433–8439 (2000) https://doi.org/10.1063/1.373559

Abstract

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On the determination of the crystallization activation energy of metallic glasses

V. A. Khonik; K. Kitagawa; H. Morii

J. Appl. Phys. 87, 8440–8443 (2000) https://doi.org/10.1063/1.373560

Abstract

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Study of defects and strain relaxation in ${GaAs/In}_{x} {Ga}_{1−x} As/GaAs$ heterostructures using photoluminescence, positron annihilation, and x-ray diffraction

B. M. Arora; K. S. Chandrasekaran; M. R. Gokhale; Geeta Nair; G. Venugopal Rao; G. Amarendra; B. Viswanathan

J. Appl. Phys. 87, 8444–8450 (2000) https://doi.org/10.1063/1.373561

Abstract

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Mechanical and electrical responses of piezoelectric solids to conical indentation

S. Sridhar; A. E. Giannakopoulos; S. Suresh

J. Appl. Phys. 87, 8451–8456 (2000) https://doi.org/10.1063/1.373562

Abstract

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Direct measurements of strain in a shock-loaded, lead filled glass

J. C. F. Millett; N. K. Bourne; Z. Rosenberg

J. Appl. Phys. 87, 8457–8460 (2000) https://doi.org/10.1063/1.373563

Abstract

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Vacancy effects in transient diffusion of Sb induced by ion implantation of Si⁺ and As⁺ ions

G. Lulli; M. Bianconi; S. Solmi; E. Napolitani; A. Carnera

J. Appl. Phys. 87, 8461–8466 (2000) https://doi.org/10.1063/1.373564

Abstract

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The effects of microstructural transitions at width transitions on interconnect reliability

C. S. Hau-Riege; C. V. Thompson

J. Appl. Phys. 87, 8467–8472 (2000) https://doi.org/10.1063/1.373565

Abstract

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Diffusion barrier properties of single- and multilayered quasi-amorphous tantalum nitride thin films against copper penetration

G. S. Chen; S. T. Chen

J. Appl. Phys. 87, 8473–8482 (2000) https://doi.org/10.1063/1.373566

Abstract

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Enhanced evaporation from a highly strained Si crystal surface

Yong Sun; Tatsuro Miyasato; J. Keith Wigmore

J. Appl. Phys. 87, 8483–8486 (2000) https://doi.org/10.1063/1.373567

Abstract

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The low energy ion assisted control of interfacial structure: Ion incident energy effects

X. W. Zhou; H. N. G. Wadley

J. Appl. Phys. 87, 8487–8496 (2000) https://doi.org/10.1063/1.373568

Abstract

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Microstructural and infrared optical properties of electrochemically etched highly doped 4H–SiC

S. Zangooie; P. O. A. Persson; J. N. Hilfiker; L. Hultman; H. Arwin

J. Appl. Phys. 87, 8497–8503 (2000) https://doi.org/10.1063/1.373569

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Ion-beam modification of Co/Ag multilayers I: Structural evolution and magnetic response

T. Veres; M. Cai; R. W. Cochrane; S. Roorda

J. Appl. Phys. 87, 8504–8512 (2000) https://doi.org/10.1063/1.373570

Abstract

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Ion-beam modification of Co/Ag multilayers II: Variation of structural and magnetic properties with Co layer thickness

T. Veres; M. Cai; S. Germain; M. Rouabhi; F. Schiettekatte; S. Roorda; R. W. Cochrane

J. Appl. Phys. 87, 8513–8521 (2000) https://doi.org/10.1063/1.373571

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Raman and dielectric function spectra of strained ${GaAs}_{1−x} {Sb}_{x}$ layers on InP

D. Serries; M. Peter; N. Herres; K. Winkler; J. Wagner

J. Appl. Phys. 87, 8522–8525 (2000) https://doi.org/10.1063/1.373572

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Evidence of photo- and electrodarkening of (CdSe)ZnS quantum dot composites

J. Rodrı́guez-Viejo; H. Mattoussi; J. R. Heine; M. K. Kuno; J. Michel; M. G. Bawendi; K. F. Jensen

J. Appl. Phys. 87, 8526–8534 (2000) https://doi.org/10.1063/1.373573

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Luminescence properties of ZnS phosphor nanocrystals prepared by the laser-induced gas-evaporation method

Masanori Tanaka; Shinya Sawai; Masaya Sengoku; Manabu Kato; Yasuaki Masumoto

J. Appl. Phys. 87, 8535–8540 (2000) https://doi.org/10.1063/1.373574

Abstract

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Quantum confinement effect in heat treated silver oxide nanoparticles

S. Banerjee; A. K. Maity; D. Chakravorty

J. Appl. Phys. 87, 8541–8544 (2000) https://doi.org/10.1063/1.373575

Abstract

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Thermal stress, optical distortion, and birefringence in a heated cylindrical trigonal crystal rod

Charles E. Greninger; Sergio E. Rodriguez

J. Appl. Phys. 87, 8545–8548 (2000) https://doi.org/10.1063/1.373576

Abstract

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Luminescence probing of crystallization in a polymer film

T. Granlund; L. A. A. Pettersson; M. R. Andersson; O. Inganäs

J. Appl. Phys. 87, 8549–8556 (2000) https://doi.org/10.1063/1.373577

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Optical properties of ${ZnS}_{1−x} {Se}_{x}$ alloys fabricated by plasma-induced isoelectronic substitution

Rong Rujkorakarn; Art J. Nelson

J. Appl. Phys. 87, 8557–8560 (2000) https://doi.org/10.1063/1.373578

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Anisotropic effective conductivity of materials with nonrandomly oriented inclusions of diverse ellipsoidal shapes

Boris Shafiro; Mark Kachanov

J. Appl. Phys. 87, 8561–8569 (2000) https://doi.org/10.1063/1.373579

Abstract

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Dynamic input capacitance of single-electron transistors and the effect on charge-sensitive electrometers

Neil M. Zimmerman; Mark W. Keller

J. Appl. Phys. 87, 8570–8574 (2000) https://doi.org/10.1063/1.373580

Abstract

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Current–voltage analysis of a tunneling emitter-undoped single quantum well infrared photodetector

K. K. M. N. Gurusinghe; K. Premaratne; T. G. Andersson; S. V. Bandara

J. Appl. Phys. 87, 8575–8579 (2000) https://doi.org/10.1063/1.373581

Abstract

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Localized electronic states related to $O_{2}$ intercalation and photoirradiation on $C_{60}$ films and $C_{70}$ films

Hitoe Habuchi; Shoji Nitta; Daxing Han; Shuichi Nonomura

J. Appl. Phys. 87, 8580–8588 (2000) https://doi.org/10.1063/1.373582

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Room temperature study of low temperature grown ${Al}_{0.3} {Ga}_{0.7} As/GaAs$ multiple quantum wells by modulation reflectance

C. Y. Lai; T. M. Hsu; C. L. Lin; C. C. Wu; W. C. Lee

J. Appl. Phys. 87, 8589–8593 (2000) https://doi.org/10.1063/1.373583

Abstract

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A high-speed silicon-based few-electron memory with metal– oxide–semiconductor field-effect transistor gain element

Andrew C. Irvine; Zahid A. K. Durrani; Haroon Ahmed

J. Appl. Phys. 87, 8594–8603 (2000) https://doi.org/10.1063/1.373584

Abstract

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Regular arrays of quantum-dot cellular automata “macrocells”

Jonathan R. Pasky; Lisa Henry; P. Douglas Tougaw

J. Appl. Phys. 87, 8604–8609 (2000) https://doi.org/10.1063/1.373585

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Current perpendicular magnetoresistances of NiFeCo and NiFe “Permalloys”

L. Vila; W. Park; J. A. Caballero; D. Bozec; R. Loloee; W. P. Pratt, Jr.; J. Bass

J. Appl. Phys. 87, 8610–8614 (2000) https://doi.org/10.1063/1.373586

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Trap-assisted tunneling in high permittivity gate dielectric stacks

M. Houssa; M. Tuominen; M. Naili; V. Afanas’ev; A. Stesmans; S. Haukka; M. M. Heyns

J. Appl. Phys. 87, 8615–8620 (2000) https://doi.org/10.1063/1.373587

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

Nonlinear alternating current susceptibility studies of high- $T_{c}$ rings: Influence of the structuring method and determination of the flux creep exponent

S. Streubel; F. Mrowka; M. Wurlitzer; P. Esquinazi; K. Zimmer

J. Appl. Phys. 87, 8621–8627 (2000) https://doi.org/10.1063/1.373531

Abstract

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Modulated optical reflectance characterization of high temperature superconducting thin film microwave devices

D. P. Almond; P. Nokrach; E. W. R. Stokes; A. Porch; S. A. L. Foulds; F. Wellhöfer; J. R. Powell; J. S. Abell

J. Appl. Phys. 87, 8628–8635 (2000) https://doi.org/10.1063/1.373588

Abstract

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Magnetic properties of ${BaFe}_{12−2x} {Zn}_{x} {Zr}_{x} O_{19}$ particles

F. L. Wei; H. C. Fang; C. K. Ong; C. S. Wang; Z. Yang

J. Appl. Phys. 87, 8636–8639 (2000) https://doi.org/10.1063/1.373589

Abstract

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Angular dispersion of the easy axis in a magnetically soft film as determined by vibrating sample magnetometry

S. U. Jen; W. L. Chen

J. Appl. Phys. 87, 8640–8644 (2000) https://doi.org/10.1063/1.373590

Abstract

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Interparticle interactions in magnetic recording media as obtained from high-order measurements by a Preisach model

Alexandru Stancu; Philip R. Bissell; Roy W. Chantrell

J. Appl. Phys. 87, 8645–8652 (2000) https://doi.org/10.1063/1.373591

Abstract

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Magnetostriction and torque response of ${Tb}_{0.5} {Dy}_{0.5} {Fe}_{2} /Fe$ composites

F. E. Pinkerton; J. F. Herbst; M. S. Meyer

J. Appl. Phys. 87, 8653–8657 (2000) https://doi.org/10.1063/1.373592

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Microstructural characterization of an $α- {Fe/Nd}_{2} {Fe}_{14} B$ nanocomposite magnet with a remaining amorphous phase

Y. Q. Wu; D. H. Ping; K. Hono; M. Hamano; A. Inoue

J. Appl. Phys. 87, 8658–8665 (2000) https://doi.org/10.1063/1.373593

Abstract

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Structure and magnetic properties of ${Tb}_{2} {Co}_{17−x} {Mn}_{x}$ compounds

Zhi-gang Sun; Hong-wei Zhang; Shao-ying Zhang; Jing-yun Wang; Bao-gen Shen

J. Appl. Phys. 87, 8666–8670 (2000) https://doi.org/10.1063/1.373594

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Magnetization reversal in irradiation-fabricated nanostructures

T. Devolder; C. Chappert; V. Mathet; H. Bernas; Y. Chen; J. P. Jamet; J. Ferré

J. Appl. Phys. 87, 8671–8681 (2000) https://doi.org/10.1063/1.373595

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Electron paramagnetic resonance of platinum impurities in ${KTiOPO}_{4}$ crystals

N. Y. Garces; K. T. Stevens; L. E. Halliburton

J. Appl. Phys. 87, 8682–8687 (2000) https://doi.org/10.1063/1.373596

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Micro-Raman scattering and x-ray diffraction studies of $({Ta}_{2} O_{5})_{1−x} ({TiO}_{2})_{x}$ ceramics

P. S. Dobal; R. S. Katiyar; Y. Jiang; R. Guo; A. S. Bhalla

J. Appl. Phys. 87, 8688–8694 (2000) https://doi.org/10.1063/1.373597

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Comparison on the effect of $({La}_{0.5} {Sr}_{0.5}) {MnO}_{3}$ and $({La}_{0.5} {Sr}_{0.5}) {CoO}_{3}$ buffer layers on fatigue properties of $({Pb}_{0.6} {Sr}_{0.4}) {TiO}_{3}$ thin films prepared by pulsed laser deposition

Hsiu-Fung Cheng; Yi-Chun Chen; Chen-Chia Chou; Kuang-Chung Chang; Chun-Shu Hou; I-Nan Lin

J. Appl. Phys. 87, 8695–8699 (2000) https://doi.org/10.1063/1.373598

Abstract

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DEVICE PHYSICS (PACS 85)

Space lateral transfer and negative differential conductance regimes in quantum waveguide junctions

E. Polizzi; N. Ben Abdallah; O. Vanbésien; D. Lippens

J. Appl. Phys. 87, 8700–8706 (2000) https://doi.org/10.1063/1.373599

Abstract

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Defect generation in field-effect transistors under channel-hot-electron stress

D. J. DiMaria

J. Appl. Phys. 87, 8707–8715 (2000) https://doi.org/10.1063/1.373600

Abstract

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

A humidity-sensing model for metal–insulator–semiconductor capacitors with porous ceramic film

G. Q. Li; P. T. Lai; M. Q. Huang; S. H. Zeng; B. Li; Y. C. Cheng

J. Appl. Phys. 87, 8716–8720 (2000) https://doi.org/10.1063/1.373601

Abstract

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The construction of orientation-dependent crystal growth and etch rate functions. Part I. Mathematical and physical aspects

J. van Suchtelen; E. van Veenendaal

J. Appl. Phys. 87, 8721–8731 (2000) https://doi.org/10.1063/1.373602

Abstract

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The construction of orientation-dependent crystal growth and etch rate functions II: Application to wet chemical etching of silicon in potassium hydroxide

E. van Veenendaal; J. van Suchtelen; W. J. P. van Enckevort; K. Sato; A. J. Nijdam; J. G. E. Gardeniers; M. Elwenspoek

J. Appl. Phys. 87, 8732–8740 (2000) https://doi.org/10.1063/1.373603

Abstract

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Nitrogen and hydrogen in thick diamond films grown by microwave plasma enhanced chemical vapor deposition at variable $H_{2}$ flow rates

S. V. Nistor; M. Stefan; V. Ralchenko; A. Khomich; D. Schoemaker

J. Appl. Phys. 87, 8741–8746 (2000) https://doi.org/10.1063/1.373604

Abstract

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Prediction of the periods of multilayers prepared by multitarget sputtering

Nicolas Martin; Christophe Rousselot

J. Appl. Phys. 87, 8747–8753 (2000) https://doi.org/10.1063/1.373605

Abstract

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Scanning probe microscope tip-induced oxidation of GaAs using modulated tip bias

Yoshitaka Okada; Yoshimasa Iuchi; Mitsuo Kawabe

J. Appl. Phys. 87, 8754–8758 (2000) https://doi.org/10.1063/1.373606

Abstract

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Structural characterization of ${Si}_{1−x} {Ge}_{x}$ alloy layers grown by molecular beam epitaxy on Si(001) substrates

T. Asano; T. Nakao; H. Matada; T. Tambo; H. Ueba; C. Tatsuyama

J. Appl. Phys. 87, 8759–8765 (2000) https://doi.org/10.1063/1.373607

Abstract

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Dissociation of ${Al}_{2} O_{3} (0001)$ substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

J. E. Van Nostrand; J. Solomon; A. Saxler; Q.-H. Xie; D. C. Reynolds; D. C. Look

J. Appl. Phys. 87, 8766–8772 (2000) https://doi.org/10.1063/1.373608

Abstract

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Ionization energies and electron mobilities in phosphorus- and nitrogen-implanted 4H-silicon carbide

M. A. Capano; J. A. Cooper, Jr.; M. R. Melloch; A. Saxler; W. C. Mitchel

J. Appl. Phys. 87, 8773–8777 (2000) https://doi.org/10.1063/1.373609

Abstract

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Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC:H/i-a-Si:H interface of amorphous silicon solar cells

Chang Hyun Lee; Jin Wan Jeon; Koeng Su Lim

J. Appl. Phys. 87, 8778–8785 (2000) https://doi.org/10.1063/1.373610

Abstract

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The effect of excitons on CdTe solar cells

S. Zh. Karazhanov; Y. Zhang; A. Mascarenhas; S. Deb

J. Appl. Phys. 87, 8786–8792 (2000) https://doi.org/10.1063/1.373611

Abstract

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COMMUNICATIONS

Electroluminescence at Si band gap energy based on metal–oxide–silicon structures

Ching-Fuh Lin; C. W. Liu; Miin-Jang Chen; M. H. Lee; I. C. Lin

J. Appl. Phys. 87, 8793–8795 (2000) https://doi.org/10.1063/1.373612

Abstract

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ERRATA

Erratum: “Light-scattering study of the glass transition in silica, with practical implications” [J. Appl. Phys. 84, 3107 (1998)]

K. Saito; H. Kakiuchida; A. J. Ikushima

J. Appl. Phys. 87, 8796 (2000) https://doi.org/10.1063/1.373613

Abstract

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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