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Issues
1 September 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Optimization of reflective bistable twisted nematic liquid crystal displays
J. Appl. Phys. 86, 2373–2376 (1999)
https://doi.org/10.1063/1.371062
Determination of the bonding in the phosphor via x-ray photoelectron spectroscopy
J. Appl. Phys. 86, 2377–2384 (1999)
https://doi.org/10.1063/1.371063
Upconversion lasing of a thulium-ion-doped fluorozirconate glass microsphere
J. Appl. Phys. 86, 2385–2388 (1999)
https://doi.org/10.1063/1.371064
Non-steady-state photoelectromotive force in reduced lithium niobate crystals
J. Appl. Phys. 86, 2389–2392 (1999)
https://doi.org/10.1063/1.371065
Electron-beam irradiation-induced nonlinearity in silicate glass films and fabrication of nonlinear optical gratings
J. Appl. Phys. 86, 2393–2396 (1999)
https://doi.org/10.1063/1.371066
Degradation of InGaAsP/InP-based multiquantum-well lasers
J. Appl. Phys. 86, 2397–2406 (1999)
https://doi.org/10.1063/1.371067
Microcavity organic light-emitting diodes for strongly directed pure red, green, and blue emissions
J. Appl. Phys. 86, 2407–2411 (1999)
https://doi.org/10.1063/1.371068
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
Stripping and cleaning of photoresist using low energy neutrals
J. Appl. Phys. 86, 2419–2424 (1999)
https://doi.org/10.1063/1.371070
Standing surface waves in a dust-contaminated large-area planar plasma source
J. Appl. Phys. 86, 2425–2430 (1999)
https://doi.org/10.1063/1.371071
Global modeling of a dielectric barrier discharge in Ne–Xe mixtures for an alternating current plasma display panel
J. Appl. Phys. 86, 2431–2441 (1999)
https://doi.org/10.1063/1.371072
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
Effects of point defect distribution on arsenic precipitation in low-temperature grown III–V arsenides
J. Appl. Phys. 86, 2442–2447 (1999)
https://doi.org/10.1063/1.371073
Oxygen precipitation and secondary defects in silicon by high energy ion implantation and two-step annealing
J. Appl. Phys. 86, 2448–2452 (1999)
https://doi.org/10.1063/1.371074
Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications
J. Appl. Phys. 86, 2453–2458 (1999)
https://doi.org/10.1063/1.371075
Formation, characterization, and properties of a new boron-carbon-nitrogen crystal
J. Appl. Phys. 86, 2464–2467 (1999)
https://doi.org/10.1063/1.371077
Influence of a surface electric field on the anchoring characteristics of nematic phases at rubbed polyimides
J. Appl. Phys. 86, 2473–2478 (1999)
https://doi.org/10.1063/1.371079
Electroplastic effect under the simultaneous superposition of electric and magnetic fields
J. Appl. Phys. 86, 2479–2482 (1999)
https://doi.org/10.1063/1.371080
Influence of natural and initial acoustoelastic coefficients on residual stress evaluation: Theory and experiment
J. Appl. Phys. 86, 2490–2498 (1999)
https://doi.org/10.1063/1.371082
Electron energy loss spectroscopy studies of the amorphous to crystalline transition in
J. Appl. Phys. 86, 2499–2504 (1999)
https://doi.org/10.1063/1.371083
Secondary ion mass spectroscopy study of Al diffusion in sandwich-ZnSTe structures grown by molecular beam epitaxy
J. Appl. Phys. 86, 2505–2508 (1999)
https://doi.org/10.1063/1.371084
Mechanisms for microstructure evolution in electroplated copper thin films near room temperature
J. Appl. Phys. 86, 2516–2525 (1999)
https://doi.org/10.1063/1.371086
Fractal-based description for the three-dimensional surface of materials
J. Appl. Phys. 86, 2526–2532 (1999)
https://doi.org/10.1063/1.371087
Bond length variation in epitaxial layers thicker than the critical thickness
J. Appl. Phys. 86, 2533–2539 (1999)
https://doi.org/10.1063/1.371088
High-resolution transmission electron microscopy of some compounds ( 2; or Si; or N)
J. Appl. Phys. 86, 2540–2543 (1999)
https://doi.org/10.1063/1.371089
Aggregation and out diffusion of iron atoms for Fe ion implanted silica films
Xing-zhao Ding; M. F. Chiah; W. Y. Cheung; S. P. Wong; J. B. Xu; I. H. Wilson; Hui-min Wang; Li-zhi Chen; Xiang-huai Liu
J. Appl. Phys. 86, 2550–2554 (1999)
https://doi.org/10.1063/1.371091
Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots
P. D. Buckle; P. Dawson; S. A. Hall; X. Chen; M. J. Steer; D. J. Mowbray; M. S. Skolnick; M. Hopkinson
J. Appl. Phys. 86, 2555–2561 (1999)
https://doi.org/10.1063/1.371092
Effect of Mo doping on accelerated growth of C-54 Evidence for template mechanism
J. Appl. Phys. 86, 2571–2575 (1999)
https://doi.org/10.1063/1.371094
Near-field optical properties of localized plasmons around lithographically designed nanostructures
J. Appl. Phys. 86, 2576–2583 (1999)
https://doi.org/10.1063/1.371095
Optical properties of InAlGaAs quantum wells: Influence of segregation and band bowing
J. Appl. Phys. 86, 2584–2589 (1999)
https://doi.org/10.1063/1.371096
Infrared optical properties of spinel films sputter deposited in an oxygen partial pressure series
J. Appl. Phys. 86, 2590–2601 (1999)
https://doi.org/10.1063/1.371097
Reflectivity investigations as a method for characterizing group III nitride films
J. Appl. Phys. 86, 2602–2610 (1999)
https://doi.org/10.1063/1.371098
Spectroscopic ellipsometry study of
J. Appl. Phys. 86, 2611–2615 (1999)
https://doi.org/10.1063/1.371099
Magnetic properties of chromium doped rare earth manganites Nd, Sm and ) by soft x-ray magnetic circular dichroism
J. Appl. Phys. 86, 2616–2621 (1999)
https://doi.org/10.1063/1.371100
Optical and structural properties of strained multi-quantum wells grown by solid source molecular beam epitaxy
J. Appl. Phys. 86, 2622–2627 (1999)
https://doi.org/10.1063/1.371101
Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films
J. Appl. Phys. 86, 2628–2637 (1999)
https://doi.org/10.1063/1.371102
Photoluminescence quantum yield of pure and molecularly doped organic solid films
J. Appl. Phys. 86, 2642–2650 (1999)
https://doi.org/10.1063/1.371104
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
X-ray photoemission and absorption spectroscopy of supported nanoscale iron clusters
J. Appl. Phys. 86, 2651–2654 (1999)
https://doi.org/10.1063/1.371105
Electrolytic conduction of silver metaphosphate glass until dielectric breakdown
J. Appl. Phys. 86, 2655–2659 (1999)
https://doi.org/10.1063/1.371106
Electronic transport in polycrystalline films
J. Appl. Phys. 86, 2660–2667 (1999)
https://doi.org/10.1063/1.371107
Analytical treatment of wave packet tunneling through a resonant double barrier heterostructure
J. Appl. Phys. 86, 2677–2683 (1999)
https://doi.org/10.1063/1.371109
Noise of a single electron transistor on a membrane
J. Appl. Phys. 86, 2684–2686 (1999)
https://doi.org/10.1063/1.371110
Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing
J. Appl. Phys. 86, 2687–2690 (1999)
https://doi.org/10.1063/1.371111
Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method
J. Appl. Phys. 86, 2696–2699 (1999)
https://doi.org/10.1063/1.371113
Polarization distribution in ceramic-polymer nanocomposites
Peter Bloss; Aimé S. DeReggi; Hans-Jürgen Gläsel; Eberhard Hartmann; Dietmar Hirsch; Hartmut Schäfer
J. Appl. Phys. 86, 2712–2718 (1999)
https://doi.org/10.1063/1.371115
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Microstructure, magnetic, and magneto-optical properties of chemical synthesized Co–RE ferrite nanocrystalline films
Fu-Xiang Cheng; Jiang-Tao Jia; Zhi-Gang Xu; Biao Zhou; Chun-Sheng Liao; Chun-Hua Yan; Liang-Yao Chen; Hai-Bin Zhao
J. Appl. Phys. 86, 2727–2732 (1999)
https://doi.org/10.1063/1.371117
Microstructural evolution and giant magnetoresistance in melt spun and annealed alloy
J. Appl. Phys. 86, 2733–2738 (1999)
https://doi.org/10.1063/1.371118
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
J. Appl. Phys. 86, 2739–2745 (1999)
https://doi.org/10.1063/1.371119
Crystallographically engineered single crystals for high-performance piezoelectrics
J. Appl. Phys. 86, 2746–2750 (1999)
https://doi.org/10.1063/1.371120
Charge transport in thin interpoly nitride/oxide stacked films
J. Appl. Phys. 86, 2751–2758 (1999)
https://doi.org/10.1063/1.371121
Incomplete structural phase transition and lattice destruction in
J. Appl. Phys. 86, 2759–2763 (1999)
https://doi.org/10.1063/1.371122
DEVICE PHYSICS (PACS 85)
Modulation speed of an efficient porous silicon light emitting device
J. Appl. Phys. 86, 2764–2773 (1999)
https://doi.org/10.1063/1.371123
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Removing optical artifacts in near-field scanning optical microscopy by using a three-dimensional scanning mode
J. Appl. Phys. 86, 2785–2789 (1999)
https://doi.org/10.1063/1.371126
Electron microprobe quantification: A new model based on electrons rather than on mass
J. Appl. Phys. 86, 2790–2794 (1999)
https://doi.org/10.1063/1.371149
Transmission near-field scanning microscope for infrared chemical imaging
J. Appl. Phys. 86, 2795–2799 (1999)
https://doi.org/10.1063/1.371127
Perturbative analytical solutions of the electric forward problem for realistic volume conductors
J. Appl. Phys. 86, 2800–2811 (1999)
https://doi.org/10.1063/1.371128
Surface acoustic modes in thin films on anisotropic substrates
J. Appl. Phys. 86, 2818–2824 (1999)
https://doi.org/10.1063/1.371130
An analytical modeling of time dependent pulsed laser melting
J. Appl. Phys. 86, 2836–2846 (1999)
https://doi.org/10.1063/1.371132
Excimer laser sputtering of mica surfaces: Mechanisms and applications
J. Appl. Phys. 86, 2847–2855 (1999)
https://doi.org/10.1063/1.371133
Comprehensive study of the film surface temperature and plasma thermokinetics during deposition by laser ablation
J. Appl. Phys. 86, 2856–2864 (1999)
https://doi.org/10.1063/1.371134
Electrostatic measurement of plasma plume characteristics in pulsed laser evaporated carbon
J. Appl. Phys. 86, 2865–2871 (1999)
https://doi.org/10.1063/1.371135
Atomistic simulation study of the interactions of radicals with silicon surfaces
J. Appl. Phys. 86, 2872–2888 (1999)
https://doi.org/10.1063/1.371136
The species dependence of inert gas ion incorporation in the ion-induced deposition of tungsten
J. Appl. Phys. 86, 2889–2895 (1999)
https://doi.org/10.1063/1.371137
Sorption in pulsed laser deposition of multicomponent materials: Experiment versus modeling
J. Appl. Phys. 86, 2901–2908 (1999)
https://doi.org/10.1063/1.371139
Grain boundary electrical barriers in positive temperature coefficient thermistors
J. Appl. Phys. 86, 2909–2913 (1999)
https://doi.org/10.1063/1.371140
COMMUNICATIONS
The Burstein-Moss effect in single crystals
J. Appl. Phys. 86, 2914–2916 (1999)
https://doi.org/10.1063/1.371141
Interaction between surface acoustic waves and resonant tunneling structures in GaAs
J. Appl. Phys. 86, 2917–2919 (1999)
https://doi.org/10.1063/1.371142
ERRATA
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Defects in semiconductors
Cyrus E. Dreyer, Anderson Janotti, et al.
Experimental investigation of electron-impact reactions in the plasma discharge of a water-vapor Hall thruster
K. Shirasu, H. Koizumi, et al.