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LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

Vapor sensing using the optical properties of porous silicon Bragg mirrors

P. A. Snow; E. K. Squire; P. St. J. Russell; L. T. Canham

J. Appl. Phys. 86, 1781–1784 (1999) https://doi.org/10.1063/1.370968

Abstract

View articletitled, Vapor sensing using the optical properties of porous silicon Bragg mirrors

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Response characteristics of high-performance photorefractive mesogenic composites

Hiroshi Ono; Akihiro Hanazawa; Tomomi Kawamura; Hideki Norisada; Nobuhiro Kawatsuki

J. Appl. Phys. 86, 1785–1790 (1999) https://doi.org/10.1063/1.370969

Abstract

View articletitled, Response characteristics of high-performance photorefractive mesogenic composites

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Grating-coupled surface plasmons at microwave frequencies

A. P. Hibbins; J. R. Sambles; C. R. Lawrence

J. Appl. Phys. 86, 1791–1795 (1999) https://doi.org/10.1063/1.370970

Abstract

View articletitled, Grating-coupled surface plasmons at microwave frequencies

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Optimum growth parameters for type-II infrared lasers

M. J. Yang; W. J. Moore; B. R. Bennett; B. V. Shanabrook; J. O. Cross; W. W. Bewley; C. L. Felix; I. Vurgaftman; J. R. Meyer

J. Appl. Phys. 86, 1796–1799 (1999) https://doi.org/10.1063/1.370971

Abstract

View articletitled, Optimum growth parameters for type-II infrared lasers

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Observation and application of optical interference and diffraction effects in reflection from photochemically fabricated Gaussian interfaces

Lynne Koker; Kurt W. Kolasinski

J. Appl. Phys. 86, 1800–1807 (1999) https://doi.org/10.1063/1.370972

Abstract

View articletitled, Observation and application of optical interference and diffraction effects in reflection from photochemically fabricated Gaussian interfaces

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Modeling of laser pulsed heating and quenching in optical data storage media

C. A. Volkert; M. Wuttig

J. Appl. Phys. 86, 1808–1816 (1999) https://doi.org/10.1063/1.370973

Abstract

View articletitled, Modeling of laser pulsed heating and quenching in optical data storage media

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PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

Particle-in-cell and Monte Carlo simulation of the hydrogen plasma immersion ion implantation process

Dixon Tat-Kun Kwok; Paul K. Chu; Blake P. Wood; Chung Chan

J. Appl. Phys. 86, 1817–1821 (1999) https://doi.org/10.1063/1.370974

Abstract

View articletitled, Particle-in-cell and Monte Carlo simulation of the hydrogen plasma immersion ion implantation process

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On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

K. H. A. Bogart; V. M. Donnelly

J. Appl. Phys. 86, 1822–1833 (1999) https://doi.org/10.1063/1.370975

Abstract

View articletitled, On the constant composition and thickness of the chlorinated silicon surface layer subjected to increasing etching product concentrations during chlorine plasma etching

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Characterization of trapped particles in rf plasmas

M. Schabel; T. Peterson; J. Sinclair; D. Lynch

J. Appl. Phys. 86, 1834–1842 (1999) https://doi.org/10.1063/1.370976

Abstract

View articletitled, Characterization of trapped particles in rf plasmas

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STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

Hydrogen role on the properties of amorphous silicon nitride

F. de Brito Mota; J. F. Justo; A. Fazzio

J. Appl. Phys. 86, 1843–1847 (1999) https://doi.org/10.1063/1.370977

Abstract

View articletitled, Hydrogen role on the properties of amorphous silicon nitride

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Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials

Naoki Fukata; Masashi Suezawa

J. Appl. Phys. 86, 1848–1853 (1999) https://doi.org/10.1063/1.370978

Abstract

View articletitled, Formation energy of self-interstitials in carbon-doped Si determined by optical absorption due to hydrogen bound to self-interstitials

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Director tilting of liquid crystals on photoisomerizable polyimide alignment layers doped with homeotropic surfactant

Byoungchoo Park; Ki-Jong Han; Youngyi Jung; Hyun-Hee Choi; Ha-Keun Hwang; Sooman Lee; Sei-Hum Jang; Hideo Takezoe

J. Appl. Phys. 86, 1854–1859 (1999) https://doi.org/10.1063/1.370979

Abstract

View articletitled, Director tilting of liquid crystals on photoisomerizable polyimide alignment layers doped with homeotropic surfactant

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Structural and vibrational properties of GaN

T. Deguchi; D. Ichiryu; K. Toshikawa; K. Sekiguchi; T. Sota; R. Matsuo; T. Azuhata; M. Yamaguchi; T. Yagi; S. Chichibu; S. Nakamura

J. Appl. Phys. 86, 1860–1866 (1999) https://doi.org/10.1063/1.370980

Abstract

View articletitled, Structural and vibrational properties of GaN

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Particle features, oxidation behaviors and magnetic properties of ultrafine particles of Ni–Co alloy prepared by hydrogen plasma metal reaction

X. G. Li; T. Murai; A. Chiba; S. Takahashi

J. Appl. Phys. 86, 1867–1873 (1999) https://doi.org/10.1063/1.370981

Abstract

View articletitled, Particle features, oxidation behaviors and magnetic properties of ultrafine particles of Ni–Co alloy prepared by hydrogen plasma metal reaction

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Electrical characterization of ZnO ceramics by scanning tunneling spectroscopy and beam-induced current in the scanning tunneling microscope

C. Dı́az-Guerra; J. Piqueras

J. Appl. Phys. 86, 1874–1877 (1999) https://doi.org/10.1063/1.370982

Abstract

View articletitled, Electrical characterization of ZnO ceramics by scanning tunneling spectroscopy and beam-induced current in the scanning tunneling microscope

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The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures

S. A. McQuaid; B. K. Johnson; D. Gambaro; R. Falster; M. J. Ashwin; J. H. Tucker

J. Appl. Phys. 86, 1878–1887 (1999) https://doi.org/10.1063/1.370983

Abstract

View articletitled, The conversion of isolated oxygen atoms to a fast diffusing species in Czochralski silicon at low temperatures

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Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity

T. Laine; K. Saarinen; P. Hautojärvi; C. Corbel; M. Missous

J. Appl. Phys. 86, 1888–1897 (1999) https://doi.org/10.1063/1.370984

Abstract

View articletitled, Defects in GaAs grown by molecular-beam epitaxy at low temperatures: stoichiometry, doping, and deactivation of n-type conductivity

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Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

Ricardo Garcı́a; Montserrat Calleja; Heinrich Rohrer

J. Appl. Phys. 86, 1898–1903 (1999) https://doi.org/10.1063/1.370985

Abstract

View articletitled, Patterning of silicon surfaces with noncontact atomic force microscopy: Field-induced formation of nanometer-size water bridges

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Diffraction stress analysis of thin films: Modeling and experimental evaluation of elastic constants and grain interaction

M. van Leeuwen; J.-D. Kamminga; E. J. Mittemeijer

J. Appl. Phys. 86, 1904–1914 (1999) https://doi.org/10.1063/1.370986

Abstract

View articletitled, Diffraction stress analysis of thin films: Modeling and experimental evaluation of elastic constants and grain interaction

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Radiation-induced explosive initiation

M. Yakovlev

J. Appl. Phys. 86, 1915–1920 (1999) https://doi.org/10.1063/1.370987

Abstract

View articletitled, Radiation-induced explosive initiation

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Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals

V. Paillard; P. Puech; M. A. Laguna; R. Carles; B. Kohn; F. Huisken

J. Appl. Phys. 86, 1921–1924 (1999) https://doi.org/10.1063/1.370988

Abstract

View articletitled, Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals

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Impact of molecular orientation on thermal conduction in spin-coated polyimide films

K. Kurabayashi; K. E. Goodson

J. Appl. Phys. 86, 1925–1931 (1999) https://doi.org/10.1063/1.370989

Abstract

View articletitled, Impact of molecular orientation on thermal conduction in spin-coated polyimide films

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A physically based model of electromigration and stress-induced void formation in microelectronic interconnects

R. J. Gleixner; W. D. Nix

J. Appl. Phys. 86, 1932–1944 (1999) https://doi.org/10.1063/1.370990

Abstract

View articletitled, A physically based model of electromigration and stress-induced void formation in microelectronic interconnects

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A finite-element study of strain fields in vertically aligned InAs islands in GaAs

T. Benabbas; Y. Androussi; A. Lefebvre

J. Appl. Phys. 86, 1945–1950 (1999) https://doi.org/10.1063/1.370991

Abstract

View articletitled, A finite-element study of strain fields in vertically aligned InAs islands in GaAs

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Large and small angle x-ray scattering studies of CdTe/MgTe superlattices

J. M. Hartmann; J. Eymery; L. Carbonell; Y. Wang

J. Appl. Phys. 86, 1951–1957 (1999) https://doi.org/10.1063/1.370992

Abstract

View articletitled, Large and small angle x-ray scattering studies of CdTe/MgTe superlattices

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Thickness dependence of the crystallization of Ba-ferrite films

T. S. Cho; S. J. Doh; J. H. Je; D. Y. Noh

J. Appl. Phys. 86, 1958–1964 (1999) https://doi.org/10.1063/1.370993

Abstract

View articletitled, Thickness dependence of the crystallization of Ba-ferrite films

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Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth

Z. R. Zytkiewicz; J. Domagala; D. Dobosz; J. Bak-Misiuk

J. Appl. Phys. 86, 1965–1969 (1999) https://doi.org/10.1063/1.370994

Abstract

View articletitled, Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth

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Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine

J. Pejnefors; S.-L. Zhang; J. V. Grahn; M. Östling; L. Persson; M. Hult

J. Appl. Phys. 86, 1970–1973 (1999) https://doi.org/10.1063/1.370995

Abstract

View articletitled, Hydrogen in undoped and heavily in situ phosphorus doped silicon films deposited using disilane and phosphine

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Reactively sputtered Ru–Si–O films

S. M. Gasser; E. Kolawa; M.-A. Nicolet

J. Appl. Phys. 86, 1974–1981 (1999) https://doi.org/10.1063/1.370996

Abstract

View articletitled, Reactively sputtered Ru–Si–O films

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Step structure and ordering in Zn-doped GaInP

S. H. Lee; C. M. Fetzer; G. B. Stringfellow; C.-J. Choi; T. Y. Seong

J. Appl. Phys. 86, 1982–1987 (1999) https://doi.org/10.1063/1.370997

Abstract

View articletitled, Step structure and ordering in Zn-doped GaInP

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High resolution electron microscope analysis of lattice distortions and In segregation in highly strained ${In}_{0.35} {Ga}_{0.65} As$ coherent islands grown on GaAs (001)

S. Kret; T. Benabbas; C. Delamarre; Y. Androussi; A. Dubon; J. Y. Laval; A. Lefebvre

J. Appl. Phys. 86, 1988–1993 (1999) https://doi.org/10.1063/1.370998

Abstract

View articletitled, High resolution electron microscope analysis of lattice distortions and In segregation in highly strained <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.35</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.65</mi></mrow></msub><mi mathvariant="normal" xmlns="">As</mi></math> coherent islands grown on GaAs (001)

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Simultaneous determination of the mechanical moduli and mass of thin layers using nonadditive quartz crystal acoustic impedance analysis

Roberto Etchenique; Ariel Dan Weisz

J. Appl. Phys. 86, 1994–2000 (1999) https://doi.org/10.1063/1.370999

Abstract

View articletitled, Simultaneous determination of the mechanical moduli and mass of thin layers using nonadditive quartz crystal acoustic impedance analysis

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Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor

T. Wang; A. Forchel

J. Appl. Phys. 86, 2001–2007 (1999) https://doi.org/10.1063/1.371000

Abstract

View articletitled, Experimental and theoretical study of strain-induced AlGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor

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Thermal stability of Mo–V epitaxial multilayers

A. Dudás; G. A. Langer; D. L. Beke; M. Kis-Varga; L. Daróczi; Z. Erdélyi

J. Appl. Phys. 86, 2008–2013 (1999) https://doi.org/10.1063/1.371001

Abstract

View articletitled, Thermal stability of Mo–V epitaxial multilayers

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New carbon nitride phase coherently grown on Si(111)

G. Barucca; G. Majni; P. Mengucci; G. Leggieri; A. Luches; M. Martino; A. Perrone

J. Appl. Phys. 86, 2014–2019 (1999) https://doi.org/10.1063/1.371002

Abstract

View articletitled, New carbon nitride phase coherently grown on Si(111)

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Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy

A. Jaeger; W. D. Sun; Fred H. Pollak; C. L. Reynolds, Jr.; M. Geva

J. Appl. Phys. 86, 2020–2024 (1999) https://doi.org/10.1063/1.371150

Abstract

View articletitled, Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy

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Isotropic dielectric functions of highly disordered ${Al}_{x} {Ga}_{1−x} InP$ $(0⩽x⩽1)$ lattice matched to GaAs

M. Schubert; J. A. Woollam; G. Leibiger; B. Rheinländer; I. Pietzonka; T. Saß; V. Gottschalch

J. Appl. Phys. 86, 2025–2033 (1999) https://doi.org/10.1063/1.371003

Abstract

View articletitled, Isotropic dielectric functions of highly disordered <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mtext>1−x</mtext></mrow></msub><mi mathvariant="normal" xmlns="">InP</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽x⩽1)</mtext></math> lattice matched to GaAs

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Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films

Bosang Kim; I. Kuskovsky; Irving P. Herman; D. Li; G. F. Neumark

J. Appl. Phys. 86, 2034–2037 (1999) https://doi.org/10.1063/1.371004

Abstract

View articletitled, Reversible ultraviolet-induced photoluminescence degradation and enhancement in GaN films

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Pockel’s electro-optic coefficients of lithium tetraborate ${Li}_{2} B_{4} O_{7}$

A. Méndez; A. Garcı́a-Cabañes; E. Diéguez; J. M. Cabrera

J. Appl. Phys. 86, 2038–2041 (1999) https://doi.org/10.1063/1.371005

Abstract

View articletitled, Pockel’s electro-optic coefficients of lithium tetraborate <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Li</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mn>4</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>7</mn></mrow></msub></math>

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X-ray induced luminescence of high-purity, amorphous silicon dioxide

A. J. Miller; R. G. Leisure; Wm. R. Austin

J. Appl. Phys. 86, 2042–2050 (1999) https://doi.org/10.1063/1.371006

Abstract

View articletitled, X-ray induced luminescence of high-purity, amorphous silicon dioxide

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Raman scattering in hexagonal GaN epitaxial layer grown on ${MgAl}_{2} O_{4}$ substrate

G. H. Li; W. Zhang; H. X. Han; Z. P. Wang; S. K. Duan

J. Appl. Phys. 86, 2051–2054 (1999) https://doi.org/10.1063/1.371007

Abstract

View articletitled, Raman scattering in hexagonal GaN epitaxial layer grown on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MgAl</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>4</mn></mrow></msub></math> substrate

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Thermally induced changes in the optical properties of ${SiN}_{x} : H$ films deposited by the electron cyclotron resonance plasma method

F. L. Martı́nez; A. del Prado; I. Mártil; G. González-Dı́az; B. Selle; I. Sieber

J. Appl. Phys. 86, 2055–2061 (1999) https://doi.org/10.1063/1.371008

Abstract

View articletitled, Thermally induced changes in the optical properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiN</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">:</mi><mi mathvariant="normal" xmlns="">H</mi></math> films deposited by the electron cyclotron resonance plasma method

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Photoreflectance spectroscopy of CdTe(001) around $E_{1}$ and $E_{1} {+Δ}_{1} :$ linear electro-optic spectrum

A. Lastras-Martı́nez; R. E. Balderas-Navarro; P. Cantú-Alejandro; L. F. Lastras-Martı́nez

J. Appl. Phys. 86, 2062–2065 (1999) https://doi.org/10.1063/1.371009

Abstract

View articletitled, Photoreflectance spectroscopy of CdTe(001) around <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn>1</mn></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>E</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi>+Δ</mi><mrow><mn>1</mn></mrow></msub><mi xmlns="">:</mi></math> linear electro-optic spectrum

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Optical properties and luminescence mechanism of oxidized free-standing porous silicon films

Dongsheng Xu; Guolin Guo; Linlin Gui; Youqi Tang; B. R. Zhang; G. G. Qin

J. Appl. Phys. 86, 2066–2072 (1999) https://doi.org/10.1063/1.371010

Abstract

View articletitled, Optical properties and luminescence mechanism of oxidized free-standing porous silicon films

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ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

J. C. Burton; F. H. Long; I. T. Ferguson

J. Appl. Phys. 86, 2073–2077 (1999) https://doi.org/10.1063/1.371011

Abstract

View articletitled, Resonance enhancement of electronic Raman scattering from nitrogen defect levels in silicon carbide

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Semiconducting properties of magnesium vanadate glasses

S. Sen; A. Ghosh

J. Appl. Phys. 86, 2078–2082 (1999) https://doi.org/10.1063/1.371012

Abstract

View articletitled, Semiconducting properties of magnesium vanadate glasses

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Nonlinear response of two-dimensional electron plasmas in the conduction channels of field effect transistor structures

Sergey Rudin; Guram Samsonidze; Frank Crowne

J. Appl. Phys. 86, 2083–2088 (1999) https://doi.org/10.1063/1.371013

Abstract

View articletitled, Nonlinear response of two-dimensional electron plasmas in the conduction channels of field effect transistor structures

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Effect of microwave heating on ${BaTiO}_{3} :Nb$ ceramics with positive temperature coefficient of resistivity

Shin’suke Jida; Takeshi Suemasu; Toshikatsu Miki

J. Appl. Phys. 86, 2089–2094 (1999) https://doi.org/10.1063/1.371014

Abstract

View articletitled, Effect of microwave heating on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi mathvariant="normal" xmlns="">:Nb</mi></math> ceramics with positive temperature coefficient of resistivity

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A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films

Tetsuo Endoh; Takao Chiba; Hiroshi Sakuraba; Markus Lenski; Fujio Masuoka

J. Appl. Phys. 86, 2095–2099 (1999) https://doi.org/10.1063/1.371015

Abstract

View articletitled, A quantitative analysis of stress-induced leakage currents and extraction of trap properties in 6.8 nm ultrathin silicon dioxide films

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Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers

D. J. DiMaria

J. Appl. Phys. 86, 2100–2109 (1999) https://doi.org/10.1063/1.371016

Abstract

View articletitled, Defect generation under substrate-hot-electron injection into ultrathin silicon dioxide layers

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Electronic energy states of organic interfaces studied by low-energy ultraviolet photoemission spectroscopy

Mitsuyoshi Onoda; Kazuya Tada; Hiroshi Nakayama

J. Appl. Phys. 86, 2110–2115 (1999) https://doi.org/10.1063/1.371017

Abstract

View articletitled, Electronic energy states of organic interfaces studied by low-energy ultraviolet photoemission spectroscopy

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Combined photoemission/in vacuo transport study of the indium tin oxide/copper $phthalocyanine {/N,N}^{'} - diphenyl {-N,N}^{'} - bis (l- naphthyl)- {1,1}^{'} {biphenyl-4,4}^{″} diamine$ molecular organic semiconductor system

I. G. Hill; A. Kahn

J. Appl. Phys. 86, 2116–2122 (1999) https://doi.org/10.1063/1.371018

Abstract

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Temperature-independent dc conduction in ${BaTiO}_{3}$ -based ceramic capacitors

Y. X. Zhou; N. Yoshimura

J. Appl. Phys. 86, 2123–2131 (1999) https://doi.org/10.1063/1.371019

Abstract

View articletitled, Temperature-independent dc conduction in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>-based ceramic capacitors

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Gain dependence of the noise in the single electron transistor

B. Starmark; Torsten Henning; T. Claeson; P. Delsing; A. N. Korotkov

J. Appl. Phys. 86, 2132–2136 (1999) https://doi.org/10.1063/1.371020

Abstract

View articletitled, Gain dependence of the noise in the single electron transistor

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MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

The nonlinear surface impedance of ${YBa}_{2} {Cu}_{3} O_{7−δ}$ thin films in zero and large applied fields

J. R. Powell; A. Porch; A. P. Kharel; M. J. Lancaster; R. G. Humphreys; F. Wellhöfer; C. E. Gough

J. Appl. Phys. 86, 2137–2145 (1999) https://doi.org/10.1063/1.371021

Abstract

View articletitled, The nonlinear surface impedance of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YBa</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mtext>7−δ</mtext></mrow></msub></math> thin films in zero and large applied fields

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Magnetic properties of nanostructured γ-Ni–46Fe alloy synthesized by a mechanochemical process

X. Y. Qin; J. S. Lee; J. G. Kim

J. Appl. Phys. 86, 2146–2154 (1999) https://doi.org/10.1063/1.371022

Abstract

View articletitled, Magnetic properties of nanostructured γ-Ni–46Fe alloy synthesized by a mechanochemical process

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Magnetic structure and site occupancies in ${YFe}_{11−x} {Co}_{x} Ti$ $(x=1,3,7,9)$

J. K. Liang; Q. Huang; A. Santoro; J. L. Wang; F. M. Yang

J. Appl. Phys. 86, 2155–2160 (1999) https://doi.org/10.1063/1.371023

Abstract

View articletitled, Magnetic structure and site occupancies in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">YFe</mi><mrow><mtext>11−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Ti</mi></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(x=1,3,7,9)</mtext></math>

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Surface anisotropy in giant magnetic coercivity effect of cubic granular ${FeCo/SiO}_{2}$ and ${NiCo/SiO}_{2}$ films: A comparison with Néel’s theory

Chen Chen; Osamu Kitakami; Satoshi Okamoto; Yutaka Shimada

J. Appl. Phys. 86, 2161–2165 (1999) https://doi.org/10.1063/1.371024

Abstract

View articletitled, Surface anisotropy in giant magnetic coercivity effect of cubic granular <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">FeCo/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">NiCo/SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films: A comparison with Néel’s theory

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Grain-boundary magnetic properties of ball-milled nanocrystalline ${Fe}_{x}$ ${Rh}_{100−x}$ alloys

E. Navarro; A. Hernando; A. R. Yavari; D. Fiorani; M. Rosenberg

J. Appl. Phys. 86, 2166–2172 (1999) https://doi.org/10.1063/1.371025

Abstract

View articletitled, Grain-boundary magnetic properties of ball-milled nanocrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi>x</mi></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Rh</mi><mrow><mtext>100−x</mtext></mrow></msub></math> alloys

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Current dependence of grain boundary magnetoresistance in ${La}_{0.67} {Ca}_{0.33} {MnO}_{3}$ films

W. Westerburg; F. Martin; S. Friedrich; M. Maier; G. Jakob

J. Appl. Phys. 86, 2173–2177 (1999) https://doi.org/10.1063/1.371026

Abstract

View articletitled, Current dependence of grain boundary magnetoresistance in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.67</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mtext>0.33</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> films

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Structural, electrical and magnetic properties of two-dimensional ${La}_{1.2} ({Sr}_{1.8−x} {Ca}_{x}) {Mn}_{2} O_{7}$ manganites

C. H. Shen; R. S. Liu; S. F. Hu; J. G. Lin; C. Y. Huang; H. S. Sheu

J. Appl. Phys. 86, 2178–2184 (1999) https://doi.org/10.1063/1.371027

Abstract

View articletitled, Structural, electrical and magnetic properties of two-dimensional <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>1.2</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1.8−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><mi xmlns="">)</mi><msub xmlns=""><mi mathvariant="normal">Mn</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">7</mi></mrow></msub></math> manganites

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Analysis of the in-plane magnetic anisotropy in amorphous ribbons obtained by torque magnetometry

M. Tejedor; J. A. Garcı́a; J. Carrizo; L. Elbaile; J. D. Santos; J. Mira; J. Rivas

J. Appl. Phys. 86, 2185–2190 (1999) https://doi.org/10.1063/1.371028

Abstract

View articletitled, Analysis of the in-plane magnetic anisotropy in amorphous ribbons obtained by torque magnetometry

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Epitaxy barium ferrite thin films on ${LiTaO}_{3}$ substrate

H. C. Fang; C. K. Ong; S. Y. Xu; K. L. Tan; S. L. Lim; Y. Li; J. M. Liu

J. Appl. Phys. 86, 2191–2195 (1999) https://doi.org/10.1063/1.371029

Abstract

View articletitled, Epitaxy barium ferrite thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiTaO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> substrate

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Static and dynamic aspects of the demagnetizing factor in magnetic thin films with random rough surfaces

George Palasantzas

J. Appl. Phys. 86, 2196–2199 (1999) https://doi.org/10.1063/1.371030

Abstract

View articletitled, Static and dynamic aspects of the demagnetizing factor in magnetic thin films with random rough surfaces

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Hydrogen dynamics in the hydrides of $\Pr_{2} {Fe}_{17}$ as revealed by Mössbauer spectroscopy

Dimitri Hautot; Gary J. Long; F. Grandjean; O. Isnard; S. Miraglia

J. Appl. Phys. 86, 2200–2207 (1999) https://doi.org/10.1063/1.371031

Abstract

View articletitled, Hydrogen dynamics in the hydrides of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Pr</mi><mrow><mn>2</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mn>17</mn></mrow></msub></math> as revealed by Mössbauer spectroscopy

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DIELECTRICS AND FERROELECTRICITY (PACS 77)

Transverse strain responses in electrostrictive poly(vinylidene fluoride-trifluoroethylene) films and development of a dilatometer for the measurement

Z.-Y. Cheng; Vivek Bharti; T.-B. Xu; Shexi Wang; Q. M. Zhang; T. Ramotowski; F. Tito; R. Ting

J. Appl. Phys. 86, 2208–2214 (1999) https://doi.org/10.1063/1.371032

Abstract

View articletitled, Transverse strain responses in electrostrictive poly(vinylidene fluoride-trifluoroethylene) films and development of a dilatometer for the measurement

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Impedance spectroscopy study of the electrical conductivity and dielectric constant of polycrystalline ${LiNbO}_{3}$

S. Lanfredi; A. C. M. Rodrigues

J. Appl. Phys. 86, 2215–2219 (1999) https://doi.org/10.1063/1.371033

Abstract

View articletitled, Impedance spectroscopy study of the electrical conductivity and dielectric constant of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiNbO</mi><mrow><mn>3</mn></mrow></msub></math>

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Growth and measurements of ferroelectric lead zirconate titanate on diamond by pulsed laser deposition

H. Du; D. W. Johnson, Jr.; W. Zhu; J. E. Graebner; G. W. Kammlott; S. Jin; J. Rogers; R. Willett; R. M. Fleming

J. Appl. Phys. 86, 2220–2225 (1999) https://doi.org/10.1063/1.371034

Abstract

View articletitled, Growth and measurements of ferroelectric lead zirconate titanate on diamond by pulsed laser deposition

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DEVICE PHYSICS (PACS 85)

Comparison of one- and two-photon optical beam-induced current imaging

Chris Xu; Winfried Denk

J. Appl. Phys. 86, 2226–2231 (1999) https://doi.org/10.1063/1.371035

Abstract

View articletitled, Comparison of one- and two-photon optical beam-induced current imaging

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Theoretical investigation of incomplete ionization of dopants in $6 H - SiC$ metal-oxide-semiconductor capacitors

C. Raynaud; J.-L. Autran

J. Appl. Phys. 86, 2232–2236 (1999) https://doi.org/10.1063/1.371061

Abstract

View articletitled, Theoretical investigation of incomplete ionization of dopants in <math xmlns="http://www.w3.org/1998/Math/MathML"><mn xmlns="">6</mn><mi mathvariant="normal" xmlns="">H</mi><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">SiC</mi></math> metal-oxide-semiconductor capacitors

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Deuterium transport through device structures

P. J. Chen; R. M. Wallace

J. Appl. Phys. 86, 2237–2244 (1999) https://doi.org/10.1063/1.371036

Abstract

View articletitled, Deuterium transport through device structures

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A diffusion model for picosecond electron bunches from negative electron affinity GaAs photocathodes

P. Hartmann; J. Bermuth; D. v. Harrach; J. Hoffmann; S. Köbis; E. Reichert; K. Aulenbacher; J. Schuler; M. Steigerwald

J. Appl. Phys. 86, 2245–2249 (1999) https://doi.org/10.1063/1.371037

Abstract

View articletitled, A diffusion model for picosecond electron bunches from negative electron affinity GaAs photocathodes

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INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

Dynamic stability of the time-averaged orbiting potential trap: Exact classical analysis

S. Gov; S. Shtrikman

J. Appl. Phys. 86, 2250–2257 (1999) https://doi.org/10.1063/1.371038

Abstract

View articletitled, Dynamic stability of the time-averaged orbiting potential trap: Exact classical analysis

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Small cantilevers for force spectroscopy of single molecules

Mario B. Viani; Tilman E. Schäffer; Ami Chand; Matthias Rief; Hermann E. Gaub; Paul K. Hansma

J. Appl. Phys. 86, 2258–2262 (1999) https://doi.org/10.1063/1.371039

Abstract

View articletitled, Small cantilevers for force spectroscopy of single molecules

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Cu sputtering and deposition by off-normal, near-threshold ${Cu}^{+}$ bombardment: Molecular dynamics simulations

Cameron F. Abrams; David B. Graves

J. Appl. Phys. 86, 2263–2267 (1999) https://doi.org/10.1063/1.371040

Abstract

View articletitled, Cu sputtering and deposition by off-normal, near-threshold <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Cu</mi><mrow><mi mathvariant="normal">+</mi></mrow></msup></math> bombardment: Molecular dynamics simulations

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Dependence of growth and nanomechanical properties of ultrathin amorphous carbon films on radio frequency sputtering conditions

W. Lu; K. Komvopoulos

J. Appl. Phys. 86, 2268–2277 (1999) https://doi.org/10.1063/1.371041

Abstract

View articletitled, Dependence of growth and nanomechanical properties of ultrathin amorphous carbon films on radio frequency sputtering conditions

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Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

Yasuo Kimura; Masato Kishi; Takashi Katoda

J. Appl. Phys. 86, 2278–2280 (1999) https://doi.org/10.1063/1.371042

Abstract

View articletitled, Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous silicon

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High intensity femtosecond laser deposition of diamond-like carbon thin films

F. Qian; V. Craciun; R. K. Singh; S. D. Dutta; P. P. Pronko

J. Appl. Phys. 86, 2281–2290 (1999) https://doi.org/10.1063/1.371043

Abstract

View articletitled, High intensity femtosecond laser deposition of diamond-like carbon thin films

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Theory of interaction between a solid inclusion in a liquid with nonuniform viscosity with an advancing solidification front

A. I. Raitchenko; K. Mukai

J. Appl. Phys. 86, 2291–2299 (1999) https://doi.org/10.1063/1.371044

Abstract

View articletitled, Theory of interaction between a solid inclusion in a liquid with nonuniform viscosity with an advancing solidification front

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Film texture evolution in plasma treated TiN thin films

S. Ikeda; J. Palleau; J. Torres; B. Chenevier; N. Bourhila; R. Madar

J. Appl. Phys. 86, 2300–2306 (1999) https://doi.org/10.1063/1.371045

Abstract

View articletitled, Film texture evolution in plasma treated TiN thin films

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X-ray diffraction and Rutherford backscattering spectrometry of ${Ba}_{1} {Nb}_{x} {Ti}_{1−x} O_{3}$ thin films synthesized by laser ablation

M. Nasir Khan; Hyun-Tak Kim; T. Kusawake; H. Kudo; K. Ohshima; H. Uwe

J. Appl. Phys. 86, 2307–2310 (1999) https://doi.org/10.1063/1.371046

Abstract

View articletitled, X-ray diffraction and Rutherford backscattering spectrometry of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mn>1</mn></mrow></msub><msub xmlns=""><mi mathvariant="normal">Nb</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ti</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mn>3</mn></mrow></msub></math> thin films synthesized by laser ablation

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Impedance of a cylindrical coil over an infinite metallic half-space with shallow surface features

Erol Uzal; Metin O. Kaya; Ibrahim Özkol

J. Appl. Phys. 86, 2311–2317 (1999) https://doi.org/10.1063/1.371047

Abstract

View articletitled, Impedance of a cylindrical coil over an infinite metallic half-space with shallow surface features

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Preparation of amorphous ${CN}_{x}$ thin films by pulsed laser deposition using a radio frequency radical beam source

Yoshifumi Aoi; Kojiro Ono; Eiji Kamijo

J. Appl. Phys. 86, 2318–2322 (1999) https://doi.org/10.1063/1.371048

Abstract

View articletitled, Preparation of amorphous <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">CN</mi><mrow><mi>x</mi></mrow></msub></math> thin films by pulsed laser deposition using a radio frequency radical beam source

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Phase formation and resistivity in the ternary system Ti–Nb–Si

Aliette Mouroux; Marylène Roux; Shi-Li Zhang; François M. d’Heurle; Cyril Cabral, Jr.; Christian Lavoie; James M. E. Harper

J. Appl. Phys. 86, 2323–2329 (1999) https://doi.org/10.1063/1.371049

Abstract

View articletitled, Phase formation and resistivity in the ternary system Ti–Nb–Si

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Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon

Manabu Itsumi; Masahiko Maeda; Takemi Ueki; Satoshi Tazawa

J. Appl. Phys. 86, 2330–2333 (1999) https://doi.org/10.1063/1.371050

Abstract

View articletitled, Oxide ridge formed around octahedral void defects on (001)-oriented Czochralski silicon

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Evidence for the stable existence of the ${Fe}_{2} Nd$ phase in the $Fe - Nd$ system

I. A. Santos; S. Gama

J. Appl. Phys. 86, 2334–2336 (1999) https://doi.org/10.1063/1.371060

Abstract

View articletitled, Evidence for the stable existence of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">Nd</mi></math> phase in the <math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">Fe</mi><mi xmlns="">–</mi><mi mathvariant="normal" xmlns="">Nd</mi></math> system

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Charge trapping and charge compensation during Auger electron spectroscopy on ${SiO}_{2}$

Hansheng Guo; W. Maus-Friedrichs; V. Kempter

J. Appl. Phys. 86, 2337–2341 (1999) https://doi.org/10.1063/1.371051

Abstract

View articletitled, Charge trapping and charge compensation during Auger electron spectroscopy on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math>

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Electron-induced gasification reactions in the fabrication process on graphite surface using scanning tunneling microscopy

Ji Wu; Chen Wang; Xiaohui Qiu; Guangyi Shang; Naixin Wang; Chunli Bai

J. Appl. Phys. 86, 2342–2345 (1999) https://doi.org/10.1063/1.371052

Abstract

View articletitled, Electron-induced gasification reactions in the fabrication process on graphite surface using scanning tunneling microscopy

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COMMUNICATIONS

Connectivity, ionic interactions, and migration in a fast-ion-conducting polymer-in-salt electrolyte based on poly(acrylonitrile) and ${LiCF}_{3} {SO}_{3}$

Anders Ferry; Ludvig Edman; Maria Forsyth; Douglas R. MacFarlane; Jianzeng Sun

J. Appl. Phys. 86, 2346–2348 (1999) https://doi.org/10.1063/1.371053

Abstract

View articletitled, Connectivity, ionic interactions, and migration in a fast-ion-conducting polymer-in-salt electrolyte based on poly(acrylonitrile) and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">LiCF</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">SO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math>

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Effect of nitrogen on the band structure of GaInNAs alloys

W. Shan; W. Walukiewicz; J. W. Ager, III; E. E. Haller; J. F. Geisz; D. J. Friedman; J. M. Olson; Sarah R. Kurtz

J. Appl. Phys. 86, 2349–2351 (1999) https://doi.org/10.1063/1.371148

Abstract

View articletitled, Effect of nitrogen on the band structure of GaInNAs alloys

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Ion channeling study of the lattice disorder in neutron irradiated GaP

K. Kuriyama; Y. Miyamoto; T. Koyama; O. Ogawa; M. Okada

J. Appl. Phys. 86, 2352–2354 (1999) https://doi.org/10.1063/1.371054

Abstract

View articletitled, Ion channeling study of the lattice disorder in neutron irradiated GaP

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Microhardness-bulk modulus scaling and pressure-induced phase transformations in $A^{I} B^{III} C_{2}^{VI}$ chalcopyrite compounds

C. Rincón; Isavic Villareal; H. Galindo

J. Appl. Phys. 86, 2355–2357 (1999) https://doi.org/10.1063/1.371055

Abstract

View articletitled, Microhardness-bulk modulus scaling and pressure-induced phase transformations in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">A</mi><mrow><mi mathvariant="normal">I</mi></mrow></msup><msup xmlns=""><mi mathvariant="normal">B</mi><mrow><mi mathvariant="normal">III</mi></mrow></msup><msubsup xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow><mrow><mi mathvariant="normal">VI</mi></mrow></msubsup></math> chalcopyrite compounds

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Visible electroluminescence from native ${SiO}_{2}$ on n-type Si substrates

J. Yuan; D. Haneman

J. Appl. Phys. 86, 2358–2360 (1999) https://doi.org/10.1063/1.371056

Abstract

View articletitled, Visible electroluminescence from native <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> on n-type Si substrates

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Thermally induced conduction type conversion in n-type InP

S. Fung; Y. W. Zhao; C. D. Beling; X. L. Xu; N. F. Sun; T. N. Sun; X. D. Chen

J. Appl. Phys. 86, 2361–2363 (1999) https://doi.org/10.1063/1.371057

Abstract

View articletitled, Thermally induced conduction type conversion in n-type InP

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Fine structure of boron nitride nanotubes produced from carbon nanotubes by a substitution reaction

D. Golberg; W. Han; Y. Bando; L. Bourgeois; K. Kurashima; T. Sato

J. Appl. Phys. 86, 2364–2366 (1999) https://doi.org/10.1063/1.371058

Abstract

View articletitled, Fine structure of boron nitride nanotubes produced from carbon nanotubes by a substitution reaction

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ERRATA

Erratum: “Growth of ultrathin ${SiO}_{2}$ on Si by surface irradiation with an $O_{2} +Ar$ electron cyclotron resonance microwave plasma at low temperatures” [J. Appl. Phys. 85, 1911 (1999)]

Y. C. Liu; L. T. Ho; Y. B. Bai; T. J. Li

J. Appl. Phys. 86, 2367 (1999) https://doi.org/10.1063/1.371059

View articletitled, Erratum: “Growth of ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> on Si by surface irradiation with an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><mi mathvariant="normal" xmlns="">+Ar</mi></math> electron cyclotron resonance microwave plasma at low temperatures” [J. Appl. Phys. 85, 1911 (1999)]

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Issues

LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)

PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)

STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)

ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)

MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)

DIELECTRICS AND FERROELECTRICITY (PACS 77)

DEVICE PHYSICS (PACS 85)

INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)

COMMUNICATIONS

ERRATA

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