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Issues
15 November 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
LASERS, OPTICS, AND OPTOELECTRONICS (PACS 42)
Ultrahigh-resolution, frequency-resolved resonance fluorescence imaging with a monoisotopic mercury atom cell
J. Appl. Phys. 86, 5337–5341 (1999)
https://doi.org/10.1063/1.371529
Anomalous transmission through near unit index contrast dielectric photonic crystals
J. Appl. Phys. 86, 5342–5347 (1999)
https://doi.org/10.1063/1.371530
PLASMAS AND ELECTRICAL DISCHARGES (PACS 51-52)
STRUCTURAL, MECHANICAL THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)
Thermal equilibrium concentrations of the amphoteric dopant Si and the associated carrier concentrations in GaAs
J. Appl. Phys. 86, 5376–5384 (1999)
https://doi.org/10.1063/1.371534
Defects in -gate metal–oxide–semiconductor structures probed by monoenergetic positron beams
Akira Uedono; Masako Hiketa; Shoichiro Tanigawa; Tomohisa Kitano; Taishi Kubota; Mariko Makabe; Ryoichi Suzuki; Toshiyuki Ohdaira; Tomohisa Mikado
J. Appl. Phys. 86, 5385–5391 (1999)
https://doi.org/10.1063/1.371535
Twist elastic constants of liquid crystals using in-plane electrode structure
J. Appl. Phys. 86, 5413–5416 (1999)
https://doi.org/10.1063/1.371539
Simulation of material properties of amorphous carbon nitride with different nitrogen concentrations
J. Appl. Phys. 86, 5417–5421 (1999)
https://doi.org/10.1063/1.371540
Low-temperature defect chemistry of oxides. I. General aspects and numerical calculations
J. Appl. Phys. 86, 5422–5433 (1999)
https://doi.org/10.1063/1.371541
Structural and magnetic properties of a novel intermetallic compound with a disordered -type structure
J. Appl. Phys. 86, 5444–5449 (1999)
https://doi.org/10.1063/1.371543
Explosive compaction of Li-ion battery components
M. J. G. Jak; E. M. Kelder; J. Schoonman; V. N. Lashkov; A. V. Strikanov; A. A. Selezenev; A. A. Potanin
J. Appl. Phys. 86, 5455–5460 (1999)
https://doi.org/10.1063/1.371545
Shock waves in basalt rock generated with high-powered lasers in a confined geometry
J. Appl. Phys. 86, 5461–5466 (1999)
https://doi.org/10.1063/1.371546
The multilayer-modified Stoney’s formula for laminated polymer composites on a silicon substrate
J. Appl. Phys. 86, 5474–5479 (1999)
https://doi.org/10.1063/1.371548
Segregation and diffusion of phosphorus from doped films into silicon
J. Appl. Phys. 86, 5480–5483 (1999)
https://doi.org/10.1063/1.371549
Lithium ion migration pathways in and related materials
J. Appl. Phys. 86, 5484–5491 (1999)
https://doi.org/10.1063/1.371550
Selective adsorption of metallocenes on clean and chemically modified Si(111) surfaces
J. Appl. Phys. 86, 5492–5496 (1999)
https://doi.org/10.1063/1.371551
Theoretical study of the interactions of radicals with silicon surfaces
J. Appl. Phys. 86, 5497–5508 (1999)
https://doi.org/10.1063/1.371552
Comparison of the adhesion of diamond coatings using indentation tests and micro-Raman spectroscopy
J. Appl. Phys. 86, 5509–5514 (1999)
https://doi.org/10.1063/1.371614
Ion channeling and x-ray diffraction studies of epitaxial Fe on GaAs(001)
J. Appl. Phys. 86, 5515–5519 (1999)
https://doi.org/10.1063/1.371553
Peculiar sponge-like structure of yttrium–iron–garnet nanocrystals on quartz substrate surface
J. Appl. Phys. 86, 5520–5523 (1999)
https://doi.org/10.1063/1.371554
Theoretical and experimental evidence for “true” atomic resolution under non-vacuum conditions
J. Appl. Phys. 86, 5537–5540 (1999)
https://doi.org/10.1063/1.371557
Measurement of ion energy distributions in the bias enhanced nucleation of chemical vapor deposited diamond
J. Appl. Phys. 86, 5549–5555 (1999)
https://doi.org/10.1063/1.371559
Excimer laser annealing of amorphous and solid-phase-crystallized silicon films
J. Appl. Phys. 86, 5556–5565 (1999)
https://doi.org/10.1063/1.371560
Time-dependent evolution of thin TiN films prepared by ion beam assisted deposition
J. Kovac; G. Scarel; M. Sancrotti; M. G. Beghi; C. E. Bottani; P. M. Ossi; L. Calliari; M. Bonelli; A. Miotello
J. Appl. Phys. 86, 5566–5572 (1999)
https://doi.org/10.1063/1.371561
Band gap determination of semiconductor powders via surface photovoltage spectroscopy
J. Appl. Phys. 86, 5573–5577 (1999)
https://doi.org/10.1063/1.371562
Room-temperature lasing of strain-compensated CdSe/ZnSSe quantum island laser structures
J. Appl. Phys. 86, 5578–5583 (1999)
https://doi.org/10.1063/1.371563
X-ray photoelectron spectroscopy analysis of GaN/(0001)AlN and AlN/(0001)GaN growth mechanisms
J. Appl. Phys. 86, 5584–5593 (1999)
https://doi.org/10.1063/1.371564
Enhancement of characteristic red emission from by Al addition
J. Appl. Phys. 86, 5594–5597 (1999)
https://doi.org/10.1063/1.371565
Strain splitting of the and free excitons in ZnO
D. C. Reynolds; D. C. Look; B. Jogai; C. W. Litton; T. C. Collins; M. T. Harris; M. J. Callahan; J. S. Bailey
J. Appl. Phys. 86, 5598–5600 (1999)
https://doi.org/10.1063/1.371566
X-ray absorption of Si–C–N thin films: A comparison between crystalline and amorphous phases
Y. K. Chang; H. H. Hsieh; W. F. Pong; M.-H. Tsai; T. E. Dann; F. Z. Chien; P. K. Tseng; L. C. Chen; S. L. Wei; K. H. Chen; J.-J. Wu; Y. F. Chen
J. Appl. Phys. 86, 5609–5613 (1999)
https://doi.org/10.1063/1.371568
Photoluminescence properties of metalorganic vapor phase epitaxial
J. Appl. Phys. 86, 5614–5618 (1999)
https://doi.org/10.1063/1.371569
Room temperature spectral hole burning and electron transfer in Sm-doped aluminosilicate glasses
J. Appl. Phys. 86, 5619–5623 (1999)
https://doi.org/10.1063/1.371570
ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)
Light-illumination-induced transformation of electron traps in hydrogen-implanted n-type silicon
J. Appl. Phys. 86, 5630–5635 (1999)
https://doi.org/10.1063/1.371572
Magnetotransport in chemically derived La–Ca–Mn–O thin films
J. Appl. Phys. 86, 5642–5649 (1999)
https://doi.org/10.1063/1.371574
Tunneling properties of holes across abrupt heterostructures using Burt’s envelope function theory
J. Appl. Phys. 86, 5650–5655 (1999)
https://doi.org/10.1063/1.371575
Properties of atomic layer deposited solid solution films and nanolaminates
J. Appl. Phys. 86, 5656–5662 (1999)
https://doi.org/10.1063/1.371576
Optical anisotropy of -oriented strained quantum-wells calculated with the effect of the spin-orbit split-off band
J. Appl. Phys. 86, 5663–5677 (1999)
https://doi.org/10.1063/1.371577
Thin film growth and band lineup of on the layered semiconductor InSe
J. Appl. Phys. 86, 5687–5691 (1999)
https://doi.org/10.1063/1.371579
MAGNETISM AND SUPERCONDUCTIVITY (PACS 74-76)
Memory effect and temperature behavior in spin valves with and without antiferromagnetic subsystems
J. Appl. Phys. 86, 5692–5695 (1999)
https://doi.org/10.1063/1.371580
Effect of a dimensional crossover on the upper critical field of practical Nb–Ti alloy superconductors
J. Appl. Phys. 86, 5696–5704 (1999)
https://doi.org/10.1063/1.371581
Flux pinning in melt-processed ternary superconductors with addition
J. Appl. Phys. 86, 5705–5711 (1999)
https://doi.org/10.1063/1.371582
Magnetic and magneto-optic properties of orthoferrite thin films grown by pulsed-laser deposition
J. Appl. Phys. 86, 5712–5717 (1999)
https://doi.org/10.1063/1.371583
Transport and magnetic properties of laser ablated films on
J. Appl. Phys. 86, 5718–5725 (1999)
https://doi.org/10.1063/1.371584
Morphological and magnetic characteristics of monodispersed Co-cluster assemblies
J. Appl. Phys. 86, 5726–5732 (1999)
https://doi.org/10.1063/1.371585
DIELECTRICS AND FERROELECTRICITY (PACS 77)
Simulation of boundary condition influence in a second-order ferroelectric phase transition
J. Appl. Phys. 86, 5739–5746 (1999)
https://doi.org/10.1063/1.371587
Electrical response of piezoelectric materials under mechanical excitation
J. Appl. Phys. 86, 5753–5756 (1999)
https://doi.org/10.1063/1.371589
DEVICE PHYSICS (PACS 85)
Device physics of single layer organic light-emitting diodes
J. Appl. Phys. 86, 5767–5774 (1999)
https://doi.org/10.1063/1.371591
Dynamic electromagnetic response of three-dimensional Josephson junction arrays
J. Appl. Phys. 86, 5775–5779 (1999)
https://doi.org/10.1063/1.371592
Origin of nonlinear surface impedance and intermodulation distortion in microstrip resonator
J. Appl. Phys. 86, 5788–5793 (1999)
https://doi.org/10.1063/1.371594
INTERDISCIPLINARY AND GENERAL PHYSICS (PACS 1-41, 43-47, 79, 81-84, 89-99)
Characteristics of electron inelastic interactions in organic compounds and water over the energy range 20–10 000 eV
J. Appl. Phys. 86, 5809–5816 (1999)
https://doi.org/10.1063/1.371597
Electromagnetic missiles and radial dependence of pulses transmitted by transient sources
J. Appl. Phys. 86, 5817–5828 (1999)
https://doi.org/10.1063/1.371598
Experimental and theoretical investigations on nonlinear resonances of composite buckled microbridges
J. Appl. Phys. 86, 5835–5840 (1999)
https://doi.org/10.1063/1.371600
An improved model for ultraviolet- and x-ray-induced electron emission from CsI
J. Appl. Phys. 86, 5841–5849 (1999)
https://doi.org/10.1063/1.371601
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
S. Keller; G. Parish; P. T. Fini; S. Heikman; C.-H. Chen; N. Zhang; S. P. DenBaars; U. K. Mishra; Y.-F. Wu
J. Appl. Phys. 86, 5850–5857 (1999)
https://doi.org/10.1063/1.371602
Atomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum-well solar cells
J. Appl. Phys. 86, 5858–5861 (1999)
https://doi.org/10.1063/1.371603
Growth and study of antiferroelectric lead zirconate thin films by pulsed laser ablation
J. Appl. Phys. 86, 5862–5869 (1999)
https://doi.org/10.1063/1.371604
Effect of sol rheology on the uniformity of spin-on silica xerogel films
J. Appl. Phys. 86, 5870–5878 (1999)
https://doi.org/10.1063/1.371605
Atomic force microscopy study of laser induced phase transitions in
J. Appl. Phys. 86, 5879–5887 (1999)
https://doi.org/10.1063/1.371606
Effect of quantum well location on single quantum well p-i-n photodiode dark currents
J. Appl. Phys. 86, 5898–5905 (1999)
https://doi.org/10.1063/1.371609
COMMUNICATIONS
Maximum entropy principle for nonparabolic hydrodynamic transport in semiconductor devices
J. Appl. Phys. 86, 5906–5908 (1999)
https://doi.org/10.1063/1.371610
Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate
J. Appl. Phys. 86, 5909–5911 (1999)
https://doi.org/10.1063/1.371611
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.