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APPLIED PHYSICS REVIEW

Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

David D. Nolte

J. Appl. Phys. 85, 6259–6289 (1999) https://doi.org/10.1063/1.370284

Abstract

View articletitled, Semi-insulating semiconductor heterostructures: Optoelectronic properties and applications

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GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Constant height scanning tunneling spectroscopy using an alternating voltage signal

George W. Ryan; J. Tornallyay

J. Appl. Phys. 85, 6290–6294 (1999) https://doi.org/10.1063/1.370129

Abstract

View articletitled, Constant height scanning tunneling spectroscopy using an alternating voltage signal

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Investigation on phase jump in a differential interferometer

Weidong Zhou; Lilong Cai

J. Appl. Phys. 85, 6295–6302 (1999) https://doi.org/10.1063/1.370130

Abstract

View articletitled, Investigation on phase jump in a differential interferometer

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Xenon–neon gas proportional scintillation counters: Experimental and simulation results

T. H. V. T. Dias; F. P. Santos; P. J. B. M. Rachinhas; F. I. G. M. Borges; J. M. F. dos Santos; C. A. N. Conde; A. D. Stauffer

J. Appl. Phys. 85, 6303–6312 (1999) https://doi.org/10.1063/1.370131

Abstract

View articletitled, Xenon–neon gas proportional scintillation counters: Experimental and simulation results

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CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

Two-plane focusing of high-space-charge sheet electron beams using periodically cusped magnetic fields

M. A. Basten; J. H. Booske

J. Appl. Phys. 85, 6313–6322 (1999) https://doi.org/10.1063/1.370132

Abstract

View articletitled, Two-plane focusing of high-space-charge sheet electron beams using periodically cusped magnetic fields

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Noise and coupling in magnetic super-resolution media for magneto-optical readout

Chubing Peng; M. Mansuripur

J. Appl. Phys. 85, 6323–6330 (1999) https://doi.org/10.1063/1.370133

Abstract

View articletitled, Noise and coupling in magnetic super-resolution media for magneto-optical readout

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Laser-frequency mixing in a scanning tunneling microscope at 1.3 μm

Th. Gutjahr-Löser; A. Hornsteiner; W. Krieger; H. Walther

J. Appl. Phys. 85, 6331–6336 (1999) https://doi.org/10.1063/1.370134

Abstract

View articletitled, Laser-frequency mixing in a scanning tunneling microscope at 1.3 μm

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Near-field optical microscopy of thin photonic crystal films

P. L. Phillips; J. C. Knight; B. J. Mangan; P. St. J. Russell; M. D. B. Charlton; G. J. Parker

J. Appl. Phys. 85, 6337–6342 (1999) https://doi.org/10.1063/1.370135

Abstract

View articletitled, Near-field optical microscopy of thin photonic crystal films

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Ultrasonic pulse compression with one-bit time reversal through multiple scattering

Arnaud Derode; Arnaud Tourin; Mathias Fink

J. Appl. Phys. 85, 6343–6352 (1999) https://doi.org/10.1063/1.370136

Abstract

View articletitled, Ultrasonic pulse compression with one-bit time reversal through multiple scattering

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Detection efficiency of microparticles in laser breakdown water analysis

Mitsunori Saito; Shin-ya Izumida; Kin-ya Onishi; Jun Akazawa

J. Appl. Phys. 85, 6353–6357 (1999) https://doi.org/10.1063/1.370137

Abstract

View articletitled, Detection efficiency of microparticles in laser breakdown water analysis

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Ion energy distributions in inductively coupled radio-frequency discharges in argon, nitrogen, oxygen, chlorine, and their mixtures

Yicheng Wang; J. K. Olthoff

J. Appl. Phys. 85, 6358–6365 (1999) https://doi.org/10.1063/1.370138

Abstract

View articletitled, Ion energy distributions in inductively coupled radio-frequency discharges in argon, nitrogen, oxygen, chlorine, and their mixtures

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Ion energy distributions in pulsed large area microwave plasma

Oleg Zabeida; Ludvik Martinu

J. Appl. Phys. 85, 6366–6372 (1999) https://doi.org/10.1063/1.370139

Abstract

View articletitled, Ion energy distributions in pulsed large area microwave plasma

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Numerical analysis of shroud gas effects on air entrainment into thermal plasma jet in ambient atmosphere of normal pressure

Kyoung Doo Kang; Sang Hee Hong

J. Appl. Phys. 85, 6373–6380 (1999) https://doi.org/10.1063/1.370140

Abstract

View articletitled, Numerical analysis of shroud gas effects on air entrainment into thermal plasma jet in ambient atmosphere of normal pressure

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Computed electron oscillation inside the duct of a vacuum arc source

T. K. Kwok; T. Zhang; P. K. Chu; M. M. M. Bilek; I. G. Brown

J. Appl. Phys. 85, 6381–6384 (1999) https://doi.org/10.1063/1.370103

Abstract

View articletitled, Computed electron oscillation inside the duct of a vacuum arc source

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The effect of magnetic field configuration on plasma beam profiles in curved magnetic filters

M. M. M. Bilek

J. Appl. Phys. 85, 6385–6391 (1999) https://doi.org/10.1063/1.370141

Abstract

View articletitled, The effect of magnetic field configuration on plasma beam profiles in curved magnetic filters

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CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Does plastic deformation proceed near thermodynamic equilibrium? The case made for shear-strained lamellar diblock copolymers

Doris Kuhlmann-Wilsdorf; Karen I. Winey

J. Appl. Phys. 85, 6392–6399 (1999) https://doi.org/10.1063/1.370142

Abstract

View articletitled, Does plastic deformation proceed near thermodynamic equilibrium? The case made for shear-strained lamellar diblock copolymers

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Amorphization of Zr–Al solid solutions under mechanical alloying at different temperatures

H. W. Sheng; K. Lu; E. Ma

J. Appl. Phys. 85, 6400–6407 (1999) https://doi.org/10.1063/1.370143

Abstract

View articletitled, Amorphization of Zr–Al solid solutions under mechanical alloying at different temperatures

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Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

A. Romanowski; G. Rozgonyi; M. Tamatsuka

J. Appl. Phys. 85, 6408–6414 (1999) https://doi.org/10.1063/1.370144

Abstract

View articletitled, Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers

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Effects of laser mode and scanning direction on melt pool shape

K. Farooq; A. Kar

J. Appl. Phys. 85, 6415–6420 (1999) https://doi.org/10.1063/1.370145

Abstract

View articletitled, Effects of laser mode and scanning direction on melt pool shape

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Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films

Jie-Hua Zhao; Todd Ryan; Paul S. Ho; Andrew J. McKerrow; Wei-Yan Shih

J. Appl. Phys. 85, 6421–6424 (1999) https://doi.org/10.1063/1.370146

Abstract

View articletitled, Measurement of elastic modulus, Poisson ratio, and coefficient of thermal expansion of on-wafer submicron films

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Feasibility of stimulated emission to measure R-line shifts in shock compressed ruby

M. D. Knudson; Y. M. Gupta

J. Appl. Phys. 85, 6425–6429 (1999) https://doi.org/10.1063/1.370147

Abstract

View articletitled, Feasibility of stimulated emission to measure R-line shifts in shock compressed ruby

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Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

W. H. Sun; K. M. Chen; Z. J. Yang; J. Li; Y. Z. Tong; S. X. Jin; G. Y. Zhang; Q. L. Zhang; G. G. Qin

J. Appl. Phys. 85, 6430–6433 (1999) https://doi.org/10.1063/1.370148

Abstract

View articletitled, Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

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Glassy dynamics of the incommensurate–commensurate phase transition in ${Zr}_{0.98} {Hf}_{0.02} {TiO}_{4}$ ceramics

Yung Park; Kevin M. Knowles

J. Appl. Phys. 85, 6434–6439 (1999) https://doi.org/10.1063/1.369822

Abstract

View articletitled, Glassy dynamics of the incommensurate–commensurate phase transition in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Zr</mi><mrow><mi mathvariant="normal">0.98</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Hf</mi><mrow><mi mathvariant="normal">0.02</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">4</mi></mrow></msub></math> ceramics

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Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

Ant Ural; Peter B. Griffin; James D. Plummer

J. Appl. Phys. 85, 6440–6446 (1999) https://doi.org/10.1063/1.370285

Abstract

View articletitled, Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon

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Diffusion and structural modification of ${Ti:LiNbO}_{3},$ studied by high-resolution x-ray diffraction

Y. Avrahami; E. Zolotoyabko

J. Appl. Phys. 85, 6447–6452 (1999) https://doi.org/10.1063/1.370286

Abstract

View articletitled, Diffusion and structural modification of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ti:LiNbO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">,</mi></math> studied by high-resolution x-ray diffraction

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Structure of copper- and $H_{2}$ -phthalocyanine thin films on ${MoS}_{2}$ studied by angle-resolved ultraviolet photoelectron spectroscopy and low energy electron diffraction

Koji Kamiya Okudaira; Shinji Hasegawa; Hisao Ishii; Kazuhiko Seki; Yoshiya Harada; Nobuo Ueno

J. Appl. Phys. 85, 6453–6461 (1999) https://doi.org/10.1063/1.370149

Abstract

View articletitled, Structure of copper- and <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">H</mi><mrow><mn>2</mn></mrow></msub></math>-phthalocyanine thin films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">MoS</mi><mrow><mn>2</mn></mrow></msub></math> studied by angle-resolved ultraviolet photoelectron spectroscopy and low energy electron diffraction

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Deposition, microstructure and properties of sputtered copper films containing insoluble molybdenum

J. P. Chu; T. N. Lin

J. Appl. Phys. 85, 6462–6469 (1999) https://doi.org/10.1063/1.370287

Abstract

View articletitled, Deposition, microstructure and properties of sputtered copper films containing insoluble molybdenum

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Dislocation mediated surface morphology of GaN

B. Heying; E. J. Tarsa; C. R. Elsass; P. Fini; S. P. DenBaars; J. S. Speck

J. Appl. Phys. 85, 6470–6476 (1999) https://doi.org/10.1063/1.370150

Abstract

View articletitled, Dislocation mediated surface morphology of GaN

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Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

Ingrid De Wolf; Michel Ignat; Georges Pozza; Laurent Maniguet; Herman E. Maes

J. Appl. Phys. 85, 6477–6485 (1999) https://doi.org/10.1063/1.370151

Abstract

View articletitled, Analysis of local mechanical stresses in and near tungsten lines on silicon substrate

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Spontaneous formation of multiple land-and-groove structures of silica thin films

Yasuhiko Takeda; Yoriko Matsuoka; Tomoyoshi Motohiro

J. Appl. Phys. 85, 6486–6491 (1999) https://doi.org/10.1063/1.370152

Abstract

View articletitled, Spontaneous formation of multiple land-and-groove structures of silica thin films

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Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

D. Zubia; S. D. Hersee

J. Appl. Phys. 85, 6492–6496 (1999) https://doi.org/10.1063/1.370153

Abstract

View articletitled, Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

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Configuration of dislocations in lateral overgrowth GaN films

M. Hao; S. Mahanty; T. Sugahara; Y. Morishima; H. Takenaka; J. Wang; S. Tottori; K. Nishino; Y. Naoi; S. Sakai

J. Appl. Phys. 85, 6497–6501 (1999) https://doi.org/10.1063/1.370110

Abstract

View articletitled, Configuration of dislocations in lateral overgrowth GaN films

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CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Electronic structure of polycrystalline ${AMoO}_{3}$ (⁠ $A=Sr$ or Ba)

H. Mizoguchi; K. Fukumi; N. Kitamura; T. Takeuchi; J. Hayakawa; H. Yamanaka; H. Yanagi; H. Hosono; H. Kawazoe

J. Appl. Phys. 85, 6502–6505 (1999) https://doi.org/10.1063/1.370288

Abstract

View articletitled, Electronic structure of polycrystalline <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">AMoO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> (⁠<math xmlns="http://www.w3.org/1998/Math/MathML"><mi mathvariant="normal" xmlns="">A=Sr</mi></math> or Ba)

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Effect of dipolar molecules on carrier mobilities in photorefractive polymers

Arosha Goonesekera; Stephen Ducharme

J. Appl. Phys. 85, 6506–6514 (1999) https://doi.org/10.1063/1.370154

Abstract

View articletitled, Effect of dipolar molecules on carrier mobilities in photorefractive polymers

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Tunneling controlled electroluminescence switching in bilayer light emitting diodes

V. R. Nikitenko; H. Bässler

J. Appl. Phys. 85, 6515–6519 (1999) https://doi.org/10.1063/1.370155

Abstract

View articletitled, Tunneling controlled electroluminescence switching in bilayer light emitting diodes

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Investigation of DX center in silicon doped GaAs–AlAs short period superlattices

F. Bosc; J. Sicart; J. L. Robert

J. Appl. Phys. 85, 6520–6525 (1999) https://doi.org/10.1063/1.370156

Abstract

View articletitled, Investigation of DX center in silicon doped GaAs–AlAs short period superlattices

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Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons

E. Constant; D. Bernard-Loridant; S. Mezière; M. Constant; J. Chevallier

J. Appl. Phys. 85, 6526–6529 (1999) https://doi.org/10.1063/1.370289

Abstract

View articletitled, Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons

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Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density

P. Cova; A. Singh; R. A. Masut

J. Appl. Phys. 85, 6530–6538 (1999) https://doi.org/10.1063/1.370157

Abstract

View articletitled, Simultaneous analysis of current–voltage and capacitance–voltage characteristics of metal–insulator–semiconductor diodes with a high mid-gap trap density

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Modification of metal/GaN contacts with GaAs interlayers

K. Horiba; K. Ono; H. Fujioka; M. Oshima; H. Miki; A. Fukizawa; M. Okuyama; Y. Watanabe

J. Appl. Phys. 85, 6539–6541 (1999) https://doi.org/10.1063/1.370158

Abstract

View articletitled, Modification of metal/GaN contacts with GaAs interlayers

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Anisotropic effective mass and scattering of electrons in mismatched heteroepitaxial films

D. Schneider; B. Himstedt; A. Schlachetzki; G.-P. Tang

J. Appl. Phys. 85, 6542–6549 (1999) https://doi.org/10.1063/1.370159

Abstract

View articletitled, Anisotropic effective mass and scattering of electrons in mismatched heteroepitaxial films

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Band lineup of a ${SnS}_{2} {/SnSe}_{2} {/SnS}_{2}$ semiconductor quantum well structure prepared by van der Waals epitaxy

R. Schlaf; C. Pettenkofer; W. Jaegermann

J. Appl. Phys. 85, 6550–6556 (1999) https://doi.org/10.1063/1.370160

Abstract

View articletitled, Band lineup of a <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SnS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/SnSe</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">/SnS</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> semiconductor quantum well structure prepared by van der Waals epitaxy

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Noise in 6H-SiC ion implanted $p–n$ diodes: Effect of the active area on the noise properties of these junctions

H. Ouacha; M. Willander; Q. Wahab; A. Ouacha; G. Holmén

J. Appl. Phys. 85, 6557–6562 (1999) https://doi.org/10.1063/1.370161

Abstract

View articletitled, Noise in 6H-SiC ion implanted <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p–n</mi></math> diodes: Effect of the active area on the noise properties of these junctions

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Characterization of transport and magnetic properties in thin film ${La}_{0.67} ({Ca}_{x} {Sr}_{1−x})_{0.33} {MnO}_{3}$ mixtures

P. R. Broussard; S. B. Qadri; V. M. Browning; V. C. Cestone

J. Appl. Phys. 85, 6563–6566 (1999) https://doi.org/10.1063/1.370162

Abstract

View articletitled, Characterization of transport and magnetic properties in thin film <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">La</mi><mrow><mtext>0.67</mtext></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Sr</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mtext>0.33</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">MnO</mi><mrow><mn>3</mn></mrow></msub></math> mixtures

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Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

P. A. Postigo; M. L. Dotor; P. Huertas; F. Garcı́a; D. Golmayo; F. Briones

J. Appl. Phys. 85, 6567–6570 (1999) https://doi.org/10.1063/1.370503

Abstract

View articletitled, Electrical and optical properties of Be-doped InP grown at low temperature by solid source atomic layer molecular beam epitaxy

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Influence of imperfections on the dynamical response in model quantum cellular automata

I. I. Yakimenko; I. V. Zozoulenko; C.-K. Wang; K.-F. Berggren

J. Appl. Phys. 85, 6571–6576 (1999) https://doi.org/10.1063/1.370163

Abstract

View articletitled, Influence of imperfections on the dynamical response in model quantum cellular automata

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Relationship between oxide density and charge trapping in ${SiO}_{2}$ films

B. J. Mrstik; V. V. Afanas’ev; A. Stesmans; P. J. McMarr; R. K. Lawrence

J. Appl. Phys. 85, 6577–6588 (1999) https://doi.org/10.1063/1.370164

Abstract

View articletitled, Relationship between oxide density and charge trapping in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films

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Band alignment at organic-inorganic semiconductor interfaces: α-NPD and CuPc on InP(110)

T. Chassé; C.-I. Wu; I. G. Hill; A. Kahn

J. Appl. Phys. 85, 6589–6592 (1999) https://doi.org/10.1063/1.370165

Abstract

View articletitled, Band alignment at organic-inorganic semiconductor interfaces: α-NPD and CuPc on InP(110)

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Bidirectional stress on a $p$ -metal–oxide–silicon capacitor

Dj. Ziane; A. El-Hdiy; G. Salace

J. Appl. Phys. 85, 6593–6597 (1999) https://doi.org/10.1063/1.370166

Abstract

View articletitled, Bidirectional stress on a <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">p</mi></math>-metal–oxide–silicon capacitor

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Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

X. F. Wang; I. C. da Cunha Lima; A. Troper; X. L. Lei

J. Appl. Phys. 85, 6598–6605 (1999) https://doi.org/10.1063/1.370167

Abstract

View articletitled, Analysis of the scattering of electrons by special vibrational modes in a GaAs quantum well with a thin AlAs middle barrier: Mobility modulated by a transversal electric field

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Transverse magnetoresistance of metal interfaces with ${Hg}_{1−x} {Cd}_{x} Te$

Xiaoning Hu; Jiaxiong Fang; Haimei Gong; Jun Zhao; Huiqing Lu; Xiangyang Li; Xinwen Hu

J. Appl. Phys. 85, 6606–6609 (1999) https://doi.org/10.1063/1.370168

Abstract

View articletitled, Transverse magnetoresistance of metal interfaces with <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Hg</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Cd</mi><mrow><mi>x</mi></mrow></msub><mi mathvariant="normal" xmlns="">Te</mi></math>

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Internal photoemission characteristics of metal–insulator–semiconductor structures at low electric fields in the insulator

H. M. Przewlocki

J. Appl. Phys. 85, 6610–6618 (1999) https://doi.org/10.1063/1.370169

Abstract

View articletitled, Internal photoemission characteristics of metal–insulator–semiconductor structures at low electric fields in the insulator

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Negative magnetoresistance and impurity band conduction in an ${In}_{0.53} {Ga}_{0.47} As/InP$ heterostructure

Z. Dziuba; T. Przesławski; K. Dybko; M. Górska; J. Marczewski; K. Regiński

J. Appl. Phys. 85, 6619–6624 (1999) https://doi.org/10.1063/1.370170

Abstract

View articletitled, Negative magnetoresistance and impurity band conduction in an <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">In</mi><mrow><mi mathvariant="normal">0.53</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ga</mi><mrow><mi mathvariant="normal">0.47</mi></mrow></msub><mi mathvariant="normal" xmlns="">As/InP</mi></math> heterostructure

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Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal–oxide–semiconductor structures

E. P. Pokatilov; V. M. Fomin; S. N. Balaban; V. N. Gladilin; S. N. Klimin; J. T. Devreese; W. Magnus; W. Schoenmaker; N. Collaert; M. Van Rossum; K. De Meyer

J. Appl. Phys. 85, 6625–6631 (1999) https://doi.org/10.1063/1.370171

Abstract

View articletitled, Distribution of fields and charge carriers in cylindrical nanosize silicon-based metal–oxide–semiconductor structures

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Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry

M. J. Yang; W. J. Moore; C. H. Yang; R. A. Wilson; B. R. Bennett; B. V. Shanabrook

J. Appl. Phys. 85, 6632–6635 (1999) https://doi.org/10.1063/1.370290

Abstract

View articletitled, Determination of temperature dependence of GaSb absorption edge and its application for transmission thermometry

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The role of Ag in the pulsed laser growth of YBCO thin films

R. Kalyanaraman; S. Oktyabrsky; J. Narayan

J. Appl. Phys. 85, 6636–6641 (1999) https://doi.org/10.1063/1.370172

Abstract

View articletitled, The role of Ag in the pulsed laser growth of YBCO thin films

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Ferromagnetic resonance in ferrite nanoparticles with uniaxial surface anisotropy

V. P. Shilov; J.-C. Bacri; F. Gazeau; F. Gendron; R. Perzynski; Yu. L. Raikher

J. Appl. Phys. 85, 6642–6647 (1999) https://doi.org/10.1063/1.370173

Abstract

View articletitled, Ferromagnetic resonance in ferrite nanoparticles with uniaxial surface anisotropy

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In-plane anomalies of the exchange bias field in ${Ni}_{80} {Fe}_{20} {/Fe}_{50} {Mn}_{50}$ bilayers on Cu(110)

S. Riedling; M. Bauer; C. Mathieu; B. Hillebrands; R. Jungblut; J. Kohlhepp; A. Reinders

J. Appl. Phys. 85, 6648–6651 (1999) https://doi.org/10.1063/1.370174

Abstract

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Fluence effects on the magnetic properties of ${Fe}_{81} B_{13.5} {Si}_{3.5} C_{2}$ metallic glass produced by pulsed laser deposition

M. Sorescu; L. Tsakalakos; T. Sands

J. Appl. Phys. 85, 6652–6654 (1999) https://doi.org/10.1063/1.370126

Abstract

View articletitled, Fluence effects on the magnetic properties of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">81</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">B</mi><mrow><mi mathvariant="normal">13.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">3.5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> metallic glass produced by pulsed laser deposition

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Pinning effect of the grain boundaries on magnetic domain wall in FeCo-based magnetic alloys

R. H. Yu; S. Basu; Y. Zhang; A. Parvizi-Majidi; John Q. Xiao

J. Appl. Phys. 85, 6655–6659 (1999) https://doi.org/10.1063/1.370175

Abstract

View articletitled, Pinning effect of the grain boundaries on magnetic domain wall in FeCo-based magnetic alloys

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Characterizing interactions in fine magnetic particle systems using first order reversal curves

Christopher R. Pike; Andrew P. Roberts; Kenneth L. Verosub

J. Appl. Phys. 85, 6660–6667 (1999) https://doi.org/10.1063/1.370176

Abstract

View articletitled, Characterizing interactions in fine magnetic particle systems using first order reversal curves

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An investigation of magnetic reversal in submicron-scale Co dots using first order reversal curve diagrams

Chris Pike; Andres Fernandez

J. Appl. Phys. 85, 6668–6676 (1999) https://doi.org/10.1063/1.370177

Abstract

View articletitled, An investigation of magnetic reversal in submicron-scale Co dots using first order reversal curve diagrams

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Structure, magnetic properties, and magnetostriction of ${Sm}_{0.88} {Dy}_{0.12} ({Fe}_{1−x} M_{x})_{2}$ $(M=Mn,$ Al) $(0⩽x⩽0.2)$

Z. J. Guo; S. C. Busbridge; B. W. Wang; Z. D. Zhang; X. G. Zhao

J. Appl. Phys. 85, 6677–6681 (1999) https://doi.org/10.1063/1.370178

Abstract

View articletitled, Structure, magnetic properties, and magnetostriction of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Sm</mi><mrow><mi mathvariant="normal">0.88</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Dy</mi><mrow><mi mathvariant="normal">0.12</mi></mrow></msub><mi xmlns="">(</mi><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">M</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi>)</mi><mrow><mn>2</mn></mrow></msub></math> <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(</mi><mi mathvariant="normal" xmlns="">M=Mn</mi><mi xmlns="">,</mi></math> Al) <math xmlns="http://www.w3.org/1998/Math/MathML"><mtext xmlns="">(0⩽x⩽0.2)</mtext></math>

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Magnetization reversal and magnetoresistance in a lateral spin-injection device

W. Y. Lee; S. Gardelis; B.-C. Choi; Y. B. Xu; C. G. Smith; C. H. W. Barnes; D. A. Ritchie; E. H. Linfield; J. A. C. Bland

J. Appl. Phys. 85, 6682–6685 (1999) https://doi.org/10.1063/1.370504

Abstract

View articletitled, Magnetization reversal and magnetoresistance in a lateral spin-injection device

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Structure and magnetic properties of intermetallic compounds ${Gd}_{3} {(Fe,Nb)}_{29}$

F. Huang; J. K. Liang; Q. L. Liu; X. L. Chen; G. Y. Hou

J. Appl. Phys. 85, 6686–6689 (1999) https://doi.org/10.1063/1.370179

Abstract

View articletitled, Structure and magnetic properties of intermetallic compounds <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Gd</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">(Fe,Nb)</mi><mrow><mi mathvariant="normal">29</mi></mrow></msub></math>

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CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Observation of self poling in ${BaTiO}_{3}$ thin films

Igor Lubomirsky; David T. Chang; Oscar M. Stafsudd

J. Appl. Phys. 85, 6690–6694 (1999) https://doi.org/10.1063/1.370180

Abstract

View articletitled, Observation of self poling in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">BaTiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> thin films

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Fracture criteria for piezoelectric materials containing multiple cracks

Lu-Ping Chao; Jin H. Huang

J. Appl. Phys. 85, 6695–6703 (1999) https://doi.org/10.1063/1.370181

Abstract

View articletitled, Fracture criteria for piezoelectric materials containing multiple cracks

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Characterization of local dielectric breakdown in ultrathin ${SiO}_{2}$ films using scanning tunneling microscopy and spectroscopy

Heiji Watanabe; Toshio Baba; Masakazu Ichikawa

J. Appl. Phys. 85, 6704–6710 (1999) https://doi.org/10.1063/1.370182

Abstract

View articletitled, Characterization of local dielectric breakdown in ultrathin <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> films using scanning tunneling microscopy and spectroscopy

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Characterization and aging response of the $d_{31}$ piezoelectric coefficient of lead zirconate titanate thin films

Joseph F. Shepard, Jr.; Fan Chu; Isaku Kanno; Susan Trolier-McKinstry

J. Appl. Phys. 85, 6711–6716 (1999) https://doi.org/10.1063/1.370183

Abstract

View articletitled, Characterization and aging response of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi>d</mi><mrow><mn>31</mn></mrow></msub></math> piezoelectric coefficient of lead zirconate titanate thin films

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Anisotropic optical responses of sapphire $(α- {Al}_{2} O_{3})$ single crystals

H. Yao; C. H. Yan

J. Appl. Phys. 85, 6717–6722 (1999) https://doi.org/10.1063/1.370184

Abstract

View articletitled, Anisotropic optical responses of sapphire <math xmlns="http://www.w3.org/1998/Math/MathML"><mi xmlns="">(α-</mi><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><mi xmlns="">)</mi></math> single crystals

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Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers

M. Moldovan; N. C. Giles

J. Appl. Phys. 85, 6723–6727 (1999) https://doi.org/10.1063/1.370185

Abstract

View articletitled, Photoluminescence excitation study of nitrogen-doped zinc selenide epilayers

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Infrared-reflection characterization of sintered SiC thermoelectric semiconductors with the use of a four-component effective medium model

Y. Okamoto; S. V. Ordin; T. Kawahara; M. I. Fedorov; Y. Miida; T. Miyakawa

J. Appl. Phys. 85, 6728–6737 (1999) https://doi.org/10.1063/1.370186

Abstract

View articletitled, Infrared-reflection characterization of sintered SiC thermoelectric semiconductors with the use of a four-component effective medium model

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Theory for photoluminescence from ${SiO}_{2}$ films containing Si nanocrystals and Er ions

G. Qin; G. G. Qin; S. H. Wang

J. Appl. Phys. 85, 6738–6745 (1999) https://doi.org/10.1063/1.370187

Abstract

View articletitled, Theory for photoluminescence from <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> films containing Si nanocrystals and Er ions

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Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

Kwang Soo Seol; Tsuyoshi Futami; Takashi Watanabe; Yoshimichi Ohki; Makoto Takiyama

J. Appl. Phys. 85, 6746–6750 (1999) https://doi.org/10.1063/1.370188

Abstract

View articletitled, Effects of ion implantation and thermal annealing on the photoluminescence in amorphous silicon nitride

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Light-induced charge transport processes in photorefractive ${Ba}_{0.77} {Ca}_{0.23} {TiO}_{3}$ doped with iron

A. Mazur; C. Veber; O. F. Schirmer; C. Kuper; H. Hesse

J. Appl. Phys. 85, 6751–6757 (1999) https://doi.org/10.1063/1.370189

Abstract

View articletitled, Light-induced charge transport processes in photorefractive <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Ba</mi><mrow><mi mathvariant="normal">0.77</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ca</mi><mrow><mi mathvariant="normal">0.23</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">TiO</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub></math> doped with iron

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Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on ${SiO}_{2}$ insulators

K. Mizoguchi; S. Nakashima; Y. Sugiura; H. Harima

J. Appl. Phys. 85, 6758–6762 (1999) https://doi.org/10.1063/1.370190

Abstract

View articletitled, Micro-Raman characterization of crystallinity of laser-recrystallized silicon films on <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">SiO</mi><mrow><mn>2</mn></mrow></msub></math> insulators

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Time-resolved magnetization modulation spectroscopy: A new probe of ultrafast spin dynamics

B. Koopmans; J. E. M. Haverkort; W. J. M. de Jonge; G. Karczewski

J. Appl. Phys. 85, 6763–6769 (1999) https://doi.org/10.1063/1.370191

Abstract

View articletitled, Time-resolved magnetization modulation spectroscopy: A new probe of ultrafast spin dynamics

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Laser-stimulated luminescence of yttria-stabilized cubic zirconia crystals

N. G. Petrik; D. P. Taylor; T. M. Orlando

J. Appl. Phys. 85, 6770–6776 (1999) https://doi.org/10.1063/1.370192

Abstract

View articletitled, Laser-stimulated luminescence of yttria-stabilized cubic zirconia crystals

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In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated Czochralski process

S. Doğan; S. Tüzemen; B. Gürbulak; A. Ateş; M. Yildirim

J. Appl. Phys. 85, 6777–6781 (1999) https://doi.org/10.1063/1.370193

Abstract

View articletitled, In situ optical assessment of semi-insulating iron doped InP grown by liquid encapsulated Czochralski process

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Violet and blue light amplification in ${Nd}^{3+}$ -doped fluoroindate glasses

G. S. Maciel; L. de S. Menezes; Cid B. de Araújo; Y. Messaddeq

J. Appl. Phys. 85, 6782–6785 (1999) https://doi.org/10.1063/1.370194

Abstract

View articletitled, Violet and blue light amplification in <math xmlns="http://www.w3.org/1998/Math/MathML"><msup xmlns=""><mi mathvariant="normal">Nd</mi><mrow><mtext>3+</mtext></mrow></msup></math>-doped fluoroindate glasses

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Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

L. Fu; H. H. Tan; M. B. Johnston; M. Gal; C. Jagadish

J. Appl. Phys. 85, 6786–6789 (1999) https://doi.org/10.1063/1.370291

Abstract

View articletitled, Proton irradiation-induced intermixing in InGaAs/(Al)GaAs quantum wells and quantum-well lasers

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Vacuum ultraviolet and x-ray luminescence efficiencies of $Y_{3} {Al}_{5} O_{12} :Ce$ phosphor screens

A. Baciero; L. Placentino; K. J. McCarthy; L. R. Barquero; A. Ibarra; B. Zurro

J. Appl. Phys. 85, 6790–6796 (1999) https://doi.org/10.1063/1.370195

Abstract

View articletitled, Vacuum ultraviolet and x-ray luminescence efficiencies of <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mi mathvariant="normal">3</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Al</mi><mrow><mi mathvariant="normal">5</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">O</mi><mrow><mi mathvariant="normal">12</mi></mrow></msub><mi mathvariant="normal" xmlns="">:Ce</mi></math> phosphor screens

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The effect of transition from a crystalline to amorphous structure on the magneto-optical Kerr rotation in ${Fe}_{0.1} {Co}_{0.9−x} {Si}_{x}$ films

J. H. Cai; G. Gu; W. Yang; Y. W. Du

J. Appl. Phys. 85, 6797–6802 (1999) https://doi.org/10.1063/1.370196

Abstract

View articletitled, The effect of transition from a crystalline to amorphous structure on the magneto-optical Kerr rotation in <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Fe</mi><mrow><mi mathvariant="normal">0.1</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mtext>0.9−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi>x</mi></mrow></msub></math> films

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Ultrashort-pulse laser machining of dielectric materials

M. D. Perry; B. C. Stuart; P. S. Banks; M. D. Feit; V. Yanovsky; A. M. Rubenchik

J. Appl. Phys. 85, 6803–6810 (1999) https://doi.org/10.1063/1.370197

Abstract

View articletitled, Ultrashort-pulse laser machining of dielectric materials

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Transient exoelectron emission from a clean tungsten tip at 200–450 K triggered by the surface electric field

T. Shiota; M. Tagawa; M. Umeno; N. Ohmae

J. Appl. Phys. 85, 6811–6815 (1999) https://doi.org/10.1063/1.370198

Abstract

View articletitled, Transient exoelectron emission from a clean tungsten tip at 200–450 K triggered by the surface electric field

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Electron field emission properties of tetrahedral amorphous carbon films

L. K. Cheah; X. Shi; E. Liu; B. K. Tay

J. Appl. Phys. 85, 6816–6821 (1999) https://doi.org/10.1063/1.370199

Abstract

View articletitled, Electron field emission properties of tetrahedral amorphous carbon films

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CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

Explicit formulas for crack identification in conductors using boundary measurements of direct current fields

Sailing He; Vladimir G. Romanov

J. Appl. Phys. 85, 6822–6827 (1999) https://doi.org/10.1063/1.370200

Abstract

View articletitled, Explicit formulas for crack identification in conductors using boundary measurements of direct current fields

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X-ray photoelectron spectra of low temperature plasma anodized ${Si}_{0.84} {Ge}_{0.16}$ alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties

L. S. Riley; S. Hall

J. Appl. Phys. 85, 6828–6837 (1999) https://doi.org/10.1063/1.370201

Abstract

View articletitled, X-ray photoelectron spectra of low temperature plasma anodized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>0.84</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mtext>0.16</mtext></mrow></msub></math> alloy on Si(100): Implications for SiGe oxidation kinetics and oxide electrical properties

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Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)

D. F. Storm; M. D. Lange; T. L. Cole

J. Appl. Phys. 85, 6838–6842 (1999) https://doi.org/10.1063/1.370292

Abstract

View articletitled, Surfactant effects of thallium in the epitaxial growth of indium arsenide on gallium arsenide(001)

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Deposition of amorphous silicon films by hot-wire chemical vapor deposition

K. F. Feenstra; R. E. I. Schropp; W. F. Van der Weg

J. Appl. Phys. 85, 6843–6852 (1999) https://doi.org/10.1063/1.370202

Abstract

View articletitled, Deposition of amorphous silicon films by hot-wire chemical vapor deposition

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Mechanisms of amino acid formation using optical emission spectroscopy

S. Miyakawa; A. B. Sawaoka; K. Ushio; K. Kobayashi

J. Appl. Phys. 85, 6853–6857 (1999) https://doi.org/10.1063/1.370203

Abstract

View articletitled, Mechanisms of amino acid formation using optical emission spectroscopy

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Effect of impurities in the CdS buffer layer on the performance of the ${Cu(In, Ga)Se}_{2}$ thin film solar cell

A. Kylner

J. Appl. Phys. 85, 6858–6865 (1999) https://doi.org/10.1063/1.370204

Abstract

View articletitled, Effect of impurities in the CdS buffer layer on the performance of the <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Cu(In, Ga)Se</mi><mrow><mi mathvariant="normal">2</mi></mrow></msub></math> thin film solar cell

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Photovoltaic properties of conjugated polymer/methanofullerene composites embedded in a polystyrene matrix

C. J. Brabec; F. Padinger; N. S. Sariciftci; J. C. Hummelen

J. Appl. Phys. 85, 6866–6872 (1999) https://doi.org/10.1063/1.370205

Abstract

View articletitled, Photovoltaic properties of conjugated polymer/methanofullerene composites embedded in a polystyrene matrix

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On the extraction of linear and nonlinear physical parameters in nonideal diodes

V. Mikhelashvili; G. Eisenstein; V. Garber; S. Fainleib; G. Bahir; D. Ritter; M. Orenstein; A. Peer

J. Appl. Phys. 85, 6873–6883 (1999) https://doi.org/10.1063/1.370206

Abstract

View articletitled, On the extraction of linear and nonlinear physical parameters in nonideal diodes

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Determination of the barrier heights for electron injection in organic light emitting devices

Ch. Jonda; A. B. R. Mayer; W. Grothe

J. Appl. Phys. 85, 6884–6888 (1999) https://doi.org/10.1063/1.370207

Abstract

View articletitled, Determination of the barrier heights for electron injection in organic light emitting devices

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Performance evaluation of high-power wide band-gap semiconductor rectifiers

Malay Trivedi; Krishna Shenai

J. Appl. Phys. 85, 6889–6897 (1999) https://doi.org/10.1063/1.370208

Abstract

View articletitled, Performance evaluation of high-power wide band-gap semiconductor rectifiers

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Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization

Joon Seop Kwak; Hong Koo Baik; Jong-Hoon Kim; Sung-Man Lee; Hyuk Ju Ryu; Jung Ho Je

J. Appl. Phys. 85, 6898–6903 (1999) https://doi.org/10.1063/1.370209

Abstract

View articletitled, Effect of thin V insertion layer into Ta film on the performance of Ta diffusion barrier in Cu metallization

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Radio-frequency properties of stacked long Josephson junctions with nonuniform bias current distribution

G. Filatrella; N. F. Pedersen

J. Appl. Phys. 85, 6904–6906 (1999) https://doi.org/10.1063/1.370210

Abstract

View articletitled, Radio-frequency properties of stacked long Josephson junctions with nonuniform bias current distribution

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Flux reversal time in thin film write heads: A nonlinear system theoretic approach

A. Prabhakar; S. Filips

J. Appl. Phys. 85, 6907–6911 (1999) https://doi.org/10.1063/1.370211

Abstract

View articletitled, Flux reversal time in thin film write heads: A nonlinear system theoretic approach

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Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channel

Kouji Fujimaru; Ryouta Sasajima; Hideki Matsumura

J. Appl. Phys. 85, 6912–6916 (1999) https://doi.org/10.1063/1.370104

Abstract

View articletitled, Nanoscale metal transistor control of Fowler–Nordheim tunneling currents through 16 nm insulating channel

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COMMUNICATIONS

Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors

F. V. Farmakis; C. A. Dimitriadis; J. Brini; G. Kamarinos; V. K. Gueorguiev; Tz. E. Ivanov

J. Appl. Phys. 85, 6917–6919 (1999) https://doi.org/10.1063/1.370105

Abstract

View articletitled, Photon emission and related hot-carrier effects in polycrystalline silicon thin-film transistors

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Enhanced hydrogen desorption from Si sites during low-temperature ${Si}_{1−x} {Ge}_{x}$ growth by disilane and solid-Ge molecular beam epitaxy

J. P. Liu; D. D. Huang; J. P. Li; Y. X. Lin; D. Z. Sun; M. Y. Kong

J. Appl. Phys. 85, 6920–6922 (1999) https://doi.org/10.1063/1.370106

Abstract

View articletitled, Enhanced hydrogen desorption from Si sites during low-temperature <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Ge</mi><mrow><mi>x</mi></mrow></msub></math> growth by disilane and solid-Ge molecular beam epitaxy

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Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy

Motoyoshi Baba; Takeaki Sasaki; Masahiro Yoshita; Hidefumi Akiyama

J. Appl. Phys. 85, 6923–6925 (1999) https://doi.org/10.1063/1.370107

Abstract

View articletitled, Aberrations and allowances for errors in a hemisphere solid immersion lens for submicron-resolution photoluminescence microscopy

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Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

K. Kuriyama; T. Koyama; K. Kushida; N. Hayashi; N. Kobayashi; M. Hasegawa

J. Appl. Phys. 85, 6926–6928 (1999) https://doi.org/10.1063/1.370293

Abstract

View articletitled, Relation between the substitutional fraction and electrical activation of carbon in heavily C-ion implanted GaAs

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Crystal structure characterization of ion-beam-synthesized ${Co}_{x} Y_{1−x} {Si}_{1.7}$ silicide

M. F. Wu; A. Vantomme; S. Hogg; H. Pattyn; G. Langouche

J. Appl. Phys. 85, 6929–6931 (1999) https://doi.org/10.1063/1.370108

Abstract

View articletitled, Crystal structure characterization of ion-beam-synthesized <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">Co</mi><mrow><mi>x</mi></mrow></msub><msub xmlns=""><mi mathvariant="normal">Y</mi><mrow><mtext>1−x</mtext></mrow></msub><msub xmlns=""><mi mathvariant="normal">Si</mi><mrow><mi mathvariant="normal">1.7</mi></mrow></msub></math> silicide

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Piezoresistive effect in AlN/GaN short range superlattice structures

R. Gaska; A. D. Bykhovski; M. S. Shur; V. V. Kaminskii; S. M. Soloviov

J. Appl. Phys. 85, 6932–6934 (1999) https://doi.org/10.1063/1.370109

Abstract

View articletitled, Piezoresistive effect in AlN/GaN short range superlattice structures

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Electrical characteristics for solid $C_{60} /GaN$ heterojunctions

K. M. Chen; W. H. Sun; K. Wu; C. Y. Li; G. G. Qin; Q. L. Zhang; X. H. Zhou; Z. N. Gu

J. Appl. Phys. 85, 6935–6937 (1999) https://doi.org/10.1063/1.370499

Abstract

View articletitled, Electrical characteristics for solid <math xmlns="http://www.w3.org/1998/Math/MathML"><msub xmlns=""><mi mathvariant="normal">C</mi><mrow><mi mathvariant="normal">60</mi></mrow></msub><mi mathvariant="normal" xmlns="">/GaN</mi></math> heterojunctions

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APPLIED PHYSICS REVIEW

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

CROSS-DISCIPLINARY PHYSICS (PACS 81-98)

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