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Issues
1 April 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
Fabrication, modeling, and direct evanescent field measurement of tapered optical fiber sensors
J. Appl. Phys. 85, 3395–3398 (1999)
https://doi.org/10.1063/1.369695
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
Switching of self-organized patterns in mutually modulating liquid crystal devices for beam control
J. Appl. Phys. 85, 3399–3405 (1999)
https://doi.org/10.1063/1.369696
Coherence-based edge diffraction sharpening of x-ray images: A simple model
J. Appl. Phys. 85, 3406–3408 (1999)
https://doi.org/10.1063/1.369697
Band-engineered semiconductor optical waveguides for integral transform implementation
J. Appl. Phys. 85, 3409–3412 (1999)
https://doi.org/10.1063/1.369771
Ultraviolet-photosensitive effect of sol–gel-derived glasses
J. Appl. Phys. 85, 3413–3418 (1999)
https://doi.org/10.1063/1.369698
Legendre polynomial approach for modeling free-ultrasonic waves in multilayered plates
J. Appl. Phys. 85, 3419–3427 (1999)
https://doi.org/10.1063/1.369699
Plasma sheath model and ion energy distribution for all radio frequencies
J. Appl. Phys. 85, 3435–3443 (1999)
https://doi.org/10.1063/1.369701
An analysis of heat transfer and fume production in gas metal arc welding. III
J. Appl. Phys. 85, 3448–3459 (1999)
https://doi.org/10.1063/1.370500
Dynamics of a coplanar-electrode plasma display panel cell. I. Basic operation
J. Appl. Phys. 85, 3460–3469 (1999)
https://doi.org/10.1063/1.369703
Dynamics of a coplanar-electrode plasma display panel. II. Cell optimization
J. Appl. Phys. 85, 3470–3476 (1999)
https://doi.org/10.1063/1.369704
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
Selective field evaporation in field-ion microscopy for ordered alloys
J. Appl. Phys. 85, 3488–3493 (1999)
https://doi.org/10.1063/1.369706
Redshift of the longitudinal optical phonon in neutron irradiated GaP
J. Appl. Phys. 85, 3499–3502 (1999)
https://doi.org/10.1063/1.369708
Vacancies and interstitial atoms in -irradiated germanium
J. Appl. Phys. 85, 3503–3511 (1999)
https://doi.org/10.1063/1.369709
Phase formation and thermal stability of mechanical alloyed iron–tantalum
J. Appl. Phys. 85, 3512–3518 (1999)
https://doi.org/10.1063/1.369710
Elastic moduli, strength, and fracture initiation at sharp notches in etched single crystal silicon microstructures
J. Appl. Phys. 85, 3519–3534 (1999)
https://doi.org/10.1063/1.369711
Thermal wave reflection and refraction: Theoretical and experimental evidence
J. Appl. Phys. 85, 3540–3545 (1999)
https://doi.org/10.1063/1.369713
Influence of the domain size on the band gap of ordered (GaIn)P
J. Appl. Phys. 85, 3561–3564 (1999)
https://doi.org/10.1063/1.369715
Growth and characterization of nanoscale 3C–SiC islands on Si substrates
J. Appl. Phys. 85, 3565–3568 (1999)
https://doi.org/10.1063/1.369772
Infrared attenuated total reflection spectroscopy of 6H–SiC(0001) and (0001̄) surfaces
J. Appl. Phys. 85, 3569–3575 (1999)
https://doi.org/10.1063/1.369716
Epitaxial growth of gallium nitride thin films on A-Plane sapphire by molecular beam epitaxy
J. Appl. Phys. 85, 3582–3589 (1999)
https://doi.org/10.1063/1.369718
The importance of high-index surfaces for the morphology of GaAs quantum dots
J. Appl. Phys. 85, 3597–3601 (1999)
https://doi.org/10.1063/1.369720
Structural dependence of combustion-flame synthesized diamond films on substrate temperatures
J. Appl. Phys. 85, 3609–3613 (1999)
https://doi.org/10.1063/1.369722
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Role of the substrate strain in the sheet resistance stability of NiSi deposited on Si(100)
J. Appl. Phys. 85, 3614–3618 (1999)
https://doi.org/10.1063/1.369774
Structural and magnetoresistive properties of
J. Appl. Phys. 85, 3619–3622 (1999)
https://doi.org/10.1063/1.369723
Carrier recombination at silicon–silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition
J. Appl. Phys. 85, 3626–3633 (1999)
https://doi.org/10.1063/1.369725
Modeling the optical constants of GaP, InP, and InAs
J. Appl. Phys. 85, 3638–3642 (1999)
https://doi.org/10.1063/1.369727
Current responsivity of semiconductor superlattice THz-photon detectors
J. Appl. Phys. 85, 3643–3654 (1999)
https://doi.org/10.1063/1.369728
Thermoelectric transport properties of n-doped and p-doped alloy thin films
J. Appl. Phys. 85, 3655–3660 (1999)
https://doi.org/10.1063/1.369729
Formation of modified interfaces with intrinsic low defect concentrations
L. G. Gosset; J. J. Ganem; H. J. von Bardeleben; S. Rigo; I. Trimaille; J. L. Cantin; T. Åkermark; I. C. Vickridge
J. Appl. Phys. 85, 3661–3665 (1999)
https://doi.org/10.1063/1.369730
Interface characterization of nanocrystalline CdS/Au junction by current–voltage and capacitance–voltage studies
J. Appl. Phys. 85, 3666–3670 (1999)
https://doi.org/10.1063/1.369731
Towards stimulated generation of coherent plasmons in nanostructures
K. Kempa; P. Bakshi; C. G. Du; G. Feng; A. Scorupsky; G. Strasser; C. Rauch; K. Unterrainer; E. Gornik
J. Appl. Phys. 85, 3708–3712 (1999)
https://doi.org/10.1063/1.369736
Hierarchical design of quantum-dot cellular automata devices
J. Appl. Phys. 85, 3713–3720 (1999)
https://doi.org/10.1063/1.369737
Evidence of strong effect from the interface on the electrical characteristics of ZnSe/GaAs heterojunctions
J. Appl. Phys. 85, 3721–3725 (1999)
https://doi.org/10.1063/1.369738
Transport of alternating current and direct current by hard superconductors. Critical and resistive state
J. Appl. Phys. 85, 3726–3731 (1999)
https://doi.org/10.1063/1.369739
Flux penetration measurements and the harmonic magnetic response of hot isostatically pressed
J. Appl. Phys. 85, 3732–3739 (1999)
https://doi.org/10.1063/1.369740
Intrinsic Josephson junctions in oxygen-deficient film deposited on a substrate step
J. Appl. Phys. 85, 3740–3744 (1999)
https://doi.org/10.1063/1.369741
High moment soft magnetic FeTiN thin films for recording head materials
J. Appl. Phys. 85, 3745–3748 (1999)
https://doi.org/10.1063/1.369742
Microwave study of thin film resistivity
J. Appl. Phys. 85, 3749–3752 (1999)
https://doi.org/10.1063/1.369743
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
High frequency tribological investigations on quartz resonator surfaces
J. Appl. Phys. 85, 3759–3765 (1999)
https://doi.org/10.1063/1.369745
Effect of modulating field on photoreflectance simulated by electroreflectance
J. Appl. Phys. 85, 3770–3773 (1999)
https://doi.org/10.1063/1.369746
Light-induced transmission nonlinearities in gallium selenide
J. Appl. Phys. 85, 3780–3785 (1999)
https://doi.org/10.1063/1.369748
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
J. Appl. Phys. 85, 3786–3791 (1999)
https://doi.org/10.1063/1.369749
Hot free-electron absorption in nonparabolic III–V semiconductors at mid-infrared wavelengths
J. Appl. Phys. 85, 3792–3806 (1999)
https://doi.org/10.1063/1.369750
Comparative study of the intra- and intervalley contributions to the free-carrier induced optical nonlinearity in
J. Appl. Phys. 85, 3807–3818 (1999)
https://doi.org/10.1063/1.369751
Dielectric properties of very thin low pressure chemically vapor deposited silicon films
J. Appl. Phys. 85, 3819–3823 (1999)
https://doi.org/10.1063/1.369776
INTERDISCIPLINARY PHYSICS (PACS 81-98)
Structural change of polycrystalline silicon films with different deposition temperature
J. Appl. Phys. 85, 3844–3849 (1999)
https://doi.org/10.1063/1.369755
Epitaxial growth of stoichiometric (100) GaAs at
J. Appl. Phys. 85, 3850–3854 (1999)
https://doi.org/10.1063/1.369778
Evidence for a thermal mechanism in excimer laser ablation of thin film ZnS on Si
J. Appl. Phys. 85, 3855–3859 (1999)
https://doi.org/10.1063/1.369756
Possible solution to the problem of high built-up stresses in diamond-like carbon films
J. Appl. Phys. 85, 3866–3876 (1999)
https://doi.org/10.1063/1.369758
Direct correlation between mechanical failure and metallurgical reaction in flip chip solder joints
J. Appl. Phys. 85, 3882–3886 (1999)
https://doi.org/10.1063/1.369779
Nanoscale desorption of H-passivated Si(100)–2×1 surfaces using an ultrahigh vacuum scanning tunneling microscope
J. Appl. Phys. 85, 3887–3892 (1999)
https://doi.org/10.1063/1.369760
Nanolithography with an atomic force microscope by means of vector-scan controlled dynamic plowing
J. Appl. Phys. 85, 3897–3903 (1999)
https://doi.org/10.1063/1.369761
Transient photocurrent response of three-color detectors based on amorphous silicon
J. Appl. Phys. 85, 3904–3911 (1999)
https://doi.org/10.1063/1.369762
COMMUNICATIONS
Three-dimensional growth mechanism of cosmo-mimetic carbon microcoils obtained by chemical vapor deposition
J. Appl. Phys. 85, 3919–3921 (1999)
https://doi.org/10.1063/1.369765
Raman spectra of the chalcopyrite compound
J. Appl. Phys. 85, 3925–3927 (1999)
https://doi.org/10.1063/1.369767
Up-converted emission observed from a hybrid inorganic:organic composite thin film
J. Appl. Phys. 85, 3928–3930 (1999)
https://doi.org/10.1063/1.369768
Crystallinity evaluation of phosphorus-doped -type diamond thin film
J. Appl. Phys. 85, 3931–3933 (1999)
https://doi.org/10.1063/1.369769
noise in polycrystalline silicon thin-film transistors
J. Appl. Phys. 85, 3934–3936 (1999)
https://doi.org/10.1063/1.369770
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Efficient methods for extracting superconducting resonator loss in the single-photon regime
Cliff Chen, David Perello, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.