Skip Nav Destination
Issues
1 March 1999
ISSN 0021-8979
EISSN 1089-7550
In this Issue
GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)
CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)
High-performance photorefractivity in high- and low-molar-mass liquid crystal mixtures
J. Appl. Phys. 85, 2482–2487 (1999)
https://doi.org/10.1063/1.369609
Thermal analysis of a laser pulse for discrete spot surface transformation hardening
J. Appl. Phys. 85, 2488–2496 (1999)
https://doi.org/10.1063/1.369610
Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides
J. Appl. Phys. 85, 2497–2501 (1999)
https://doi.org/10.1063/1.369611
codoped lead fluoroindogallate glasses for mid infrared and upconversion applications
J. Appl. Phys. 85, 2502–2507 (1999)
https://doi.org/10.1063/1.369612
Impluse response of a fiber optic probe hydrophone determined with shock waves in water
J. Appl. Phys. 85, 2514–2516 (1999)
https://doi.org/10.1063/1.369569
Sheath and presheath potentials for anode, cathode and floating plasma-facing surfaces
J. Appl. Phys. 85, 2522–2527 (1999)
https://doi.org/10.1063/1.369845
Experimental investigation of surface wave propagation in collisional plasma columns
J. Appl. Phys. 85, 2528–2533 (1999)
https://doi.org/10.1063/1.369570
CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)
Control of the bias tilt angles in nematic liquid crystals
S. V. Yablonskii; K. Nakayama; S. Okazaki; M. Ozaki; K. Yoshino; S. P. Palto; M. Yu. Baranovich; A. S. Michailov
J. Appl. Phys. 85, 2556–2561 (1999)
https://doi.org/10.1063/1.369574
Hydrogen interaction with implantation induced point defects in p-type silicon
J. Appl. Phys. 85, 2562–2567 (1999)
https://doi.org/10.1063/1.369575
Infrared and transmission electron microscopy studies of ion-implanted H in GaN
J. Appl. Phys. 85, 2568–2573 (1999)
https://doi.org/10.1063/1.369623
Infrared vibration spectra of hydrogenated, deuterated, and tritiated amorphous silicon
J. Appl. Phys. 85, 2574–2578 (1999)
https://doi.org/10.1063/1.369607
Microstructure evolution of GaSe thin films grown on GaAs(100) by molecular beam epitaxy
J. Appl. Phys. 85, 2603–2608 (1999)
https://doi.org/10.1063/1.369578
Structural evolution during deposition of epitaxial Fe/Pt(001) multilayers
J. Appl. Phys. 85, 2609–2616 (1999)
https://doi.org/10.1063/1.369636
Reactions at amorphous SiC/Ni interfaces
J. Appl. Phys. 85, 2636–2641 (1999)
https://doi.org/10.1063/1.369580
CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)
Simplified scattering rate calculation in nonparabolic hydrodynamic equations
J. Appl. Phys. 85, 2658–2662 (1999)
https://doi.org/10.1063/1.369583
Effects of electron confinement on thermionic emission current in a modulation doped heterostructure
J. Appl. Phys. 85, 2663–2666 (1999)
https://doi.org/10.1063/1.369627
Spectroscopic study of self-organized quantum dot like structures in Ga–In–P superlattices on (311) GaAs
J. Appl. Phys. 85, 2687–2693 (1999)
https://doi.org/10.1063/1.369585
Oscillator strength of excitons in (In, Ga)As/GaAs quantum wells in the presence of a large electric field
J. Appl. Phys. 85, 2713–2718 (1999)
https://doi.org/10.1063/1.369606
Numerical investigation of monolithic heterojunction and buried layer GaAs lateral p-i-n photodetectors
J. Appl. Phys. 85, 2719–2721 (1999)
https://doi.org/10.1063/1.369846
Electronic structures and phonon-limited electron mobility of double-gate silicon-on-insulator Si inversion layers
J. Appl. Phys. 85, 2722–2731 (1999)
https://doi.org/10.1063/1.369589
Energy and momentum relaxation of two-dimensional electron gas due to near-surface deformation scattering
J. Appl. Phys. 85, 2754–2762 (1999)
https://doi.org/10.1063/1.369591
Interacting amorphous ferromagnetic wires: A complex system
J. Appl. Phys. 85, 2768–2774 (1999)
https://doi.org/10.1063/1.369592
Effects of stacking faults on magnetic viscosity in thin film magnetic recording media
J. Appl. Phys. 85, 2775–2781 (1999)
https://doi.org/10.1063/1.369593
Magnetic properties of two-dimensional arrays of epitaxial Fe (001) submicron particles
J. Appl. Phys. 85, 2793–2799 (1999)
https://doi.org/10.1063/1.369596
Microstructure and high temperature magnetic properties of permanent magnets
J. Appl. Phys. 85, 2800–2804 (1999)
https://doi.org/10.1063/1.369597
Structure and magnetostriction of and alloys ( Ni)
J. Appl. Phys. 85, 2805–2809 (1999)
https://doi.org/10.1063/1.369598
CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)
Electric field dependence of piezoelectric properties for rhombohedral – single crystals
J. Appl. Phys. 85, 2810–2814 (1999)
https://doi.org/10.1063/1.369599
Ferroelectric phase transitions and three-dimensional phase diagrams of a system under a hydrostatic pressure
J. Appl. Phys. 85, 2815–2820 (1999)
https://doi.org/10.1063/1.369600
Cooperative or noncooperative dielectric relaxation in ionic solids: A discriminating experimental approach
J. Appl. Phys. 85, 2821–2827 (1999)
https://doi.org/10.1063/1.369601
Thickness mode material constants of a supported piezoelectric film
J. Appl. Phys. 85, 2835–2843 (1999)
https://doi.org/10.1063/1.369603
Low temperature absorption and luminescence of oligothiophene single crystals
J. Appl. Phys. 85, 2844–2847 (1999)
https://doi.org/10.1063/1.369630
Spectroscopic and structural characterization of electrochemically grown ZnO quantum dots
J. Appl. Phys. 85, 2861–2865 (1999)
https://doi.org/10.1063/1.369049
Spatial and temperature dependence of carrier recombination in an InGaAs/InP heterostructure
J. Appl. Phys. 85, 2866–2869 (1999)
https://doi.org/10.1063/1.369631
Polarity sensitive electrooptical response in a nematic liquid crystal–polymer mixture
J. Appl. Phys. 85, 2870–2874 (1999)
https://doi.org/10.1063/1.369050
Photoluminescence quenching in multiple quantum wells grown with atomic hydrogen
J. Appl. Phys. 85, 2875–2880 (1999)
https://doi.org/10.1063/1.369632
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
J. Appl. Phys. 85, 2888–2893 (1999)
https://doi.org/10.1063/1.369052
Enhancement of electro-optical performance in nematic emulsion films
J. Appl. Phys. 85, 2894–2898 (1999)
https://doi.org/10.1063/1.369053
INTERDISCIPLINARY PHYSICS (PACS 81-98)
Growth of amorphous hydrogenated carbon nitride films in radio-frequency plasma
J. Appl. Phys. 85, 2904–2908 (1999)
https://doi.org/10.1063/1.369055
Growth stage of crystalline film on Si(100) grown by an ionized cluster beam deposition
J. Appl. Phys. 85, 2909–2914 (1999)
https://doi.org/10.1063/1.369056
Diameter of As clusters in LT-GaAs by Raman spectroscopy
J. Appl. Phys. 85, 2929–2933 (1999)
https://doi.org/10.1063/1.369058
Transmission electron microscopy of silicides nucleated in Y–Si reaction system
J. Appl. Phys. 85, 2934–2938 (1999)
https://doi.org/10.1063/1.369059
Analysis of the role of mobility-lifetime products in the performance of amorphous silicon solar cells
J. Appl. Phys. 85, 2939–2951 (1999)
https://doi.org/10.1063/1.369634
Evolution of a two-dimensional quantum cellular neural network driven by an external field
J. Appl. Phys. 85, 2952–2961 (1999)
https://doi.org/10.1063/1.369060
Modeling and manufacturability assessment of bistable quantum-dot cells
J. Appl. Phys. 85, 2962–2971 (1999)
https://doi.org/10.1063/1.369061
Intersubband infrared detector with optimized valence band quantum wells for 3–5 μm wavelength region
J. Appl. Phys. 85, 2972–2976 (1999)
https://doi.org/10.1063/1.369062
COMMUNICATIONS
Transition of carrier distribution from a strained to relaxed state in InGaAs/GaAs quantum well
J. Appl. Phys. 85, 2985–2987 (1999)
https://doi.org/10.1063/1.369614
Microstructural study on the C49-to-C54 phase transformation in formed from preamorphization implantation
J. Appl. Phys. 85, 2988–2990 (1999)
https://doi.org/10.1063/1.369615
Device simultaneous determination of the source and cavity parameters of a microcavity light-emitting diode
J. Appl. Phys. 85, 2994–2996 (1999)
https://doi.org/10.1063/1.369617
Temperature-dependent photoluminescence of self-organized quantum dots
J. Appl. Phys. 85, 2997–2999 (1999)
https://doi.org/10.1063/1.369618
In situ reflection high-energy electron diffraction observation of epitaxial thin films
J. Appl. Phys. 85, 3000–3002 (1999)
https://doi.org/10.1063/1.369635
Two-channel AlGaN/GaN heterostructure field effect transistor for high power applications
J. Appl. Phys. 85, 3009–3011 (1999)
https://doi.org/10.1063/1.369621
Re-examination of important defect complexes in silicon: From microelectronics to quantum computing
P. P. Filippatos, A. Chroneos, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.