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GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

Simple thermodynamic diagrams for real refrigeration systems

J. M. Gordon; K. C. Ng; H. T. Chua

J. Appl. Phys. 85, 641–646 (1999) https://doi.org/10.1063/1.369247

Abstract

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Signals induced in semiconductor gamma-ray imaging detectors

J. D. Eskin; H. H. Barrett; H. B. Barber

J. Appl. Phys. 85, 647–659 (1999) https://doi.org/10.1063/1.369198

Abstract

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CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

Capture radius of magnetic particles in random cylindrical matrices in high gradient magnetic separation

Mayuree Natenapit; Wirat Sanglek

J. Appl. Phys. 85, 660–664 (1999) https://doi.org/10.1063/1.369199

Abstract

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Relaxation kinetics in quantum cascade lasers

S. Slivken; V. I. Litvinov; M. Razeghi; J. R. Meyer

J. Appl. Phys. 85, 665–671 (1999) https://doi.org/10.1063/1.369200

Abstract

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Optimization of double pulse pumping for Ni-like Sm x-ray lasers

J. Y. Lin; G. J. Tallents; R. Smith; A. G. MacPhee; E. Wolfrum; J. Zhang; G. Eker; R. Keenan; C. L. S. Lewis; D. Neely; R. M. N. O’Rourke; G. J. Pert; S. J. Pestehe; J. S. Wark

J. Appl. Phys. 85, 672–675 (1999) https://doi.org/10.1063/1.369201

Abstract

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Higher-order optical nonlinearity observed in host–guest liquid crystals

Hiroshi Ono; Yoshiro Harato

J. Appl. Phys. 85, 676–680 (1999) https://doi.org/10.1063/1.369202

Abstract

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Comparison of the temperature dependence of optical poling between guest-host and side-chain polymer films

Gang Xu; Jinhai Si; Xuchun Liu; Q. G. Yang; Peixian Ye; Zhao Li; Yuquan Shen

J. Appl. Phys. 85, 681–685 (1999) https://doi.org/10.1063/1.369147

Abstract

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Observation of downstream energetic electron/ion flow and accompanied high-power microwave radiation during the opening of a submicrosecond plasma opening switch

Ya. E. Krasik; A. Dunaevsky; J. Felsteiner; J. R. Goyer

J. Appl. Phys. 85, 686–695 (1999) https://doi.org/10.1063/1.369148

Abstract

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Absolute atomic hydrogen densities in a radio frequency discharge measured by two-photon laser induced fluorescence imaging

L. Chérigier; U. Czarnetzki; D. Luggenhölscher; V. Schulz-von der Gathen; H. F. Döbele

J. Appl. Phys. 85, 696–702 (1999) https://doi.org/10.1063/1.369149

Abstract

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Experimental setup and electrical characteristics of an inductively coupled plasma

V. A. Godyak; R. B. Piejak; B. M. Alexandrovich

J. Appl. Phys. 85, 703–712 (1999) https://doi.org/10.1063/1.369150

Abstract

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Characterization and modeling of the ablation plumes formed by intense-pulsed ion beam impact on solid targets

H. A. Davis; G. P. Johnston; J. C. Olson; D. J. Rej; W. J. Waganaar; C. L. Ruiz; F. A. Schmidlapp; M. O. Thompson

J. Appl. Phys. 85, 713–721 (1999) https://doi.org/10.1063/1.369151

Abstract

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CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

Temperature dependence of the domain wall width in ${LaAlO}_{3}$

Jutta Chrosch; Ekhard K. H. Salje

J. Appl. Phys. 85, 722–727 (1999) https://doi.org/10.1063/1.369152

Abstract

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Half-leaky guided wave determination of azimuthal anchoring energy and twist elastic constant of a homogeneously aligned nematic liquid crystal

F. Yang; J. R. Sambles; G. W. Bradberry

J. Appl. Phys. 85, 728–733 (1999) https://doi.org/10.1063/1.369153

Abstract

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Quantum size and composition effects in photoacoustic spectra of ${Fe}_{x} {Zr}_{1−x} O_{2}$ clusters

F. X. Liu; X. Y. Zhang; Q. Wu; L. Liu; J. Y. Wang; Q. D. Su

J. Appl. Phys. 85, 734–738 (1999) https://doi.org/10.1063/1.369248

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Use of Rietveld refinement to fit a hexagonal crystal structure in the presence of elastic and plastic anisotropy

M. R. Daymond; M. A. M. Bourke; R. B. Von Dreele

J. Appl. Phys. 85, 739–747 (1999) https://doi.org/10.1063/1.369154

Abstract

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Search for radiation-induced electrical degradation in ion irradiated sapphire and polycrystalline ${Al}_{2} O_{3}$

W. Kesternich

J. Appl. Phys. 85, 748–752 (1999) https://doi.org/10.1063/1.369155

Abstract

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Interaction between Fe, dopants, and secondary defects in MeV Fe ion implanted InP

Andrea Gasparotto; Alberto Carnera; Cesare Frigeri; Francesco Priolo; Beatrice Fraboni; Andrea Camporese; Gilberto Rossetto

J. Appl. Phys. 85, 753–760 (1999) https://doi.org/10.1063/1.369156

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Two-dimensional simulation of plasma-based ion implantation

M. Paulus; L. Stals; U. Rüde; B. Rauschenbach

J. Appl. Phys. 85, 761–766 (1999) https://doi.org/10.1063/1.369157

Abstract

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Simulation of dynamic compaction of metal powders

D. Roshan Kumar; R. Krishna Kumar; P. K. Philip

J. Appl. Phys. 85, 767–775 (1999) https://doi.org/10.1063/1.369158

Abstract

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Thermal conductivity of uranium dioxide up to 2900 K from simultaneous measurement of the heat capacity and thermal diffusivity

C. Ronchi; M. Sheindlin; M. Musella; G. J. Hyland

J. Appl. Phys. 85, 776–789 (1999) https://doi.org/10.1063/1.369159

Abstract

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Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures

W. P. Gillin

J. Appl. Phys. 85, 790–793 (1999) https://doi.org/10.1063/1.369160

Abstract

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Temperature dependence of the thermal diffusivity of GaAs in the 100–305 K range measured by the pulsed photothermal displacement technique

M. Soltanolkotabi; G. L. Bennis; R. Gupta

J. Appl. Phys. 85, 794–798 (1999) https://doi.org/10.1063/1.369161

Abstract

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Diffusion of Au in ZnSe and its dependence on crystal quality

J. Slotte; R. Salonen; T. Ahlgren; E. Rauhala; J. Keinonen; J. Räisänen; P. Uusimaa; A. Salokatve; M. Pessa; A. Laakso

J. Appl. Phys. 85, 799–802 (1999) https://doi.org/10.1063/1.369162

Abstract

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Fluorine implantation effect on boron diffusion in Si

Yong-Jik Park; Jong-Jean Kim

J. Appl. Phys. 85, 803–806 (1999) https://doi.org/10.1063/1.369163

Abstract

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Sulfur doping of GaAs with ${(NH}_{4})_{2} S_{x}$ solution

Jong-Lam Lee

J. Appl. Phys. 85, 807–811 (1999) https://doi.org/10.1063/1.369164

Abstract

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Wide band gap amorphous silicon thin films prepared by chemical annealing

Wataru Futako; Kunihiko Yoshino; Charles M. Fortmann; Isamu Shimizu

J. Appl. Phys. 85, 812–818 (1999) https://doi.org/10.1063/1.369165

Abstract

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Unified model for ordering and staging of intercalated M ions in $M_{x} {TiS}_{2}$

Bing-lin Gu; Qing-gong Song; Jun Ni

J. Appl. Phys. 85, 819–824 (1999) https://doi.org/10.1063/1.369166

Abstract

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Phase selection governed by different growth velocities in the early stages of the Ti/Al phase reaction

S. Wöhlert; R. Bormann

J. Appl. Phys. 85, 825–832 (1999) https://doi.org/10.1063/1.369167

Abstract

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Behavior of strained ${Si}_{1−y} C_{y}$ $(0 ⩽ y ⩽ 0.02)$ layers grown on silicon during wet oxidation

B. Garrido; J. R. Morante; M. Franz; K. Pressel; D. Krüger; P. Zaumseil; H. J. Osten

J. Appl. Phys. 85, 833–840 (1999) https://doi.org/10.1063/1.369168

Abstract

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Postdeposition relaxation of internal stress in sputter-grown thin films caused by ion bombardment

R. Nowak; F. Yoshida; J. Morgiel; B. Major

J. Appl. Phys. 85, 841–852 (1999) https://doi.org/10.1063/1.369249

Abstract

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Domain structure of epitaxial ${PbTiO}_{3}$ thin films on ${LaAlO}_{3} (100)$ grown by metal organic chemical vapor deposition

Bi Ming Yen; Haydn Chen

J. Appl. Phys. 85, 853–860 (1999) https://doi.org/10.1063/1.369203

Abstract

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Investigation of diffuse interfaces using time-resolved acoustic spectroscopy

C. J. K. Richardson; M. J. Ehrlich; J. W. Wagner

J. Appl. Phys. 85, 861–867 (1999) https://doi.org/10.1063/1.369204

Abstract

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Structure of self-assembled layers on silicon: Combined use of spectroscopic variable angle ellipsometry, neutron reflection, and atomic force microscopy

D. A. Styrkas; J. L. Keddie; J. R. Lu; T. J. Su; P. A. Zhdan

J. Appl. Phys. 85, 868–875 (1999) https://doi.org/10.1063/1.369205

Abstract

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Characterization of surface structure in sputtered Al films: Correlation to microstructure evolution

Adriana E. Lita; John E. Sanchez, Jr.

J. Appl. Phys. 85, 876–882 (1999) https://doi.org/10.1063/1.369206

Abstract

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Domain structure in chemically ordered ${In}_{x} {Ga}_{1−x} N$ alloys grown by molecular beam epitaxy

D. Doppalapudi; S. N. Basu; T. D. Moustakas

J. Appl. Phys. 85, 883–886 (1999) https://doi.org/10.1063/1.369250

Abstract

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CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

Optical study of continuous thin films and island films of Ir: Interband absorption and localization of conduction electrons of Ir

E. Anno

J. Appl. Phys. 85, 887–892 (1999) https://doi.org/10.1063/1.369207

Abstract

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Central-cell corrections for Si and S in GaAs in a strong magnetic field

R. J. Heron; R. A. Lewis; P. E. Simmonds; R. P. Starrett; A. V. Skougarevsky; R. G. Clark; C. R. Stanley

J. Appl. Phys. 85, 893–896 (1999) https://doi.org/10.1063/1.369351

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Electrical and defect thermodynamic properties of nanocrystalline titanium dioxide

P. Knauth; H. L. Tuller

J. Appl. Phys. 85, 897–902 (1999) https://doi.org/10.1063/1.369208

Abstract

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High field nonlinearities and current density profiles in off-axis silicon

H. B. Evans; P. A. Mawbry; J. E. Aubrey

J. Appl. Phys. 85, 903–911 (1999) https://doi.org/10.1063/1.369209

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Spatial variation of activation energy in undoped high-resistivity bulk GaAs

C. Reichel; W. Siegel; G. Kühnel

J. Appl. Phys. 85, 912–915 (1999) https://doi.org/10.1063/1.369210

Abstract

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Ensemble Monte Carlo study of electron transport in wurtzite InN

Enrico Bellotti; Bhautik K. Doshi; Kevin F. Brennan; John D. Albrecht; P. Paul Ruden

J. Appl. Phys. 85, 916–923 (1999) https://doi.org/10.1063/1.369211

Abstract

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Hole antiresonances above quantum wells

S. Ekbote; M. Cahay; K. Roenker

J. Appl. Phys. 85, 924–934 (1999) https://doi.org/10.1063/1.369212

Abstract

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Electrical resistance and mechanical stress in NiCr/Cu/NiCr thin films

W. Brückner; S. Baunack

J. Appl. Phys. 85, 935–940 (1999) https://doi.org/10.1063/1.369213

Abstract

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Hot-electron transport through ${Au/CaF}_{2} /Si (111)$ structure studied by ballistic electron emission spectroscopy

Touru Sumiya; Katsuya Honda; Tadao Miura; Shun-ichiro Tanaka

J. Appl. Phys. 85, 941–946 (1999) https://doi.org/10.1063/1.369214

Abstract

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Quantum transport in an atom-sized bridge between a metal surface and a tip of a scanning tunneling microscope at finite temperatures

Y. Kawahito; H. Kasai; H. Nakanishi; A. Okiji

J. Appl. Phys. 85, 947–952 (1999) https://doi.org/10.1063/1.369215

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Experimental evidence of surface conduction in AlSb–InAs tunneling diodes

K. Nomoto; K. Taira; T. Suzuki; I. Hase

J. Appl. Phys. 85, 953–958 (1999) https://doi.org/10.1063/1.369216

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Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures

R. Jaszek; J. J. Harris; C. Roberts

J. Appl. Phys. 85, 959–968 (1999) https://doi.org/10.1063/1.369251

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Chemical bonding and electronic properties of ${SeS}_{2}$ -treated GaAs(100)

Jingxi Sun; Dong Ju Seo; W. L. O’Brien; F. J. Himpsel; A. B. Ellis; T. F. Kuech

J. Appl. Phys. 85, 969–977 (1999) https://doi.org/10.1063/1.369217

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Measurement of the conduction band offsets in ${Si/Si}_{1−x−y} {Ge}_{x} C_{y}$ and ${Si/Si}_{1−y} C_{y}$ heterostructures using metal-oxide-semiconductor capacitors

D. V. Singh; K. Rim; T. O. Mitchell; J. L. Hoyt; J. F. Gibbons

J. Appl. Phys. 85, 978–984 (1999) https://doi.org/10.1063/1.369218

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Admittance spectroscopy analysis of the conduction band offsets in ${Si/Si}_{1−x−y} {Ge}_{x} C_{y}$ and ${Si/Si}_{1−y} C_{y}$ heterostructures

D. V. Singh; K. Rim; T. O. Mitchell; J. L. Hoyt; J. F. Gibbons

J. Appl. Phys. 85, 985–993 (1999) https://doi.org/10.1063/1.369219

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Modelling the ultraviolet irradiation effect on the effective minority carrier recombination lifetime of silicon wafers

W. P. Lee; Y. L. Khong; W. S. Seow

J. Appl. Phys. 85, 994–1001 (1999) https://doi.org/10.1063/1.369220

Abstract

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Induced magnetization in lithium doped ${YBa}_{2} {Cu}_{3} O_{y}$

F. Maury; M. Nicolas-Francillon; M. Nanot; R. Ollitrault-Fichet

J. Appl. Phys. 85, 1002–1009 (1999) https://doi.org/10.1063/1.369221

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Mössbauer investigation of Fe–Ni fine particles

Bin Liu; Runsheng Huang; Jinhui Wang; H. M. Widatallah; Huaixian Lu; Jinrong Zhang; Jinxiang Liu

J. Appl. Phys. 85, 1010–1013 (1999) https://doi.org/10.1063/1.369222

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Structure, hyperfine interactions, and magnetic behavior of amorphous and nanocrystalline ${Fe}_{80} M_{7} B_{12} {Cu}_{1}$ (⁠ $M=Mo,$ Nb, Ti) alloys

M. Miglierini; M. Kopcewicz; B. Idzikowski; Z. E. Horváth; A. Grabias; I. Škorvánek; P. Duźewski; Cs. S. Daróczi

J. Appl. Phys. 85, 1014–1025 (1999) https://doi.org/10.1063/1.369223

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Compositional dependence of the giant magnetoresistance in ${Fe}_{x} {Rh}_{1−x}$ thin films

J. van Driel; R. Coehoorn; G. J. Strijkers; E. Brück; F. R. de Boer

J. Appl. Phys. 85, 1026–1036 (1999) https://doi.org/10.1063/1.369224

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Magnetic cluster and medium noise in CoCrTa/Cr longitudinal film media studied by magnetic force microscopy

J. Chen; H. Saito; S. Ishio; K. Kobayashi

J. Appl. Phys. 85, 1037–1042 (1999) https://doi.org/10.1063/1.369225

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Domain structure dynamics of amorphous ${Fe}_{64} {Co}_{21} B_{15}$ and ${Co}_{77} B_{23}$ ribbons studied by three-dimensional neutron depolarization

J. P. Sinnecker; R. Sato Turtelli; R. Grössinger; G. Badurek; P. Riedler; S. Menhart

J. Appl. Phys. 85, 1043–1049 (1999) https://doi.org/10.1063/1.369226

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Magnetization reversal mechanisms in small antiferromagnetic particles

X. Zianni; K. N. Trohidou

J. Appl. Phys. 85, 1050–1057 (1999) https://doi.org/10.1063/1.369227

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Electrical resistivity and enhanced magnetoresistance in $({La}_{0.6} {Pb}_{0.4} {MnO}_{3} {/La}_{0.85} {MnO}_{3−δ})_{n}$ superlattices

M. Sahana; M. S. Hegde; V. Prasad; S. V. Subramanyam

J. Appl. Phys. 85, 1058–1062 (1999) https://doi.org/10.1063/1.369228

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Role of silicon impurities in the trapping of holes in ${KTiOPO}_{4}$ crystals

K. T. Stevens; S. D. Setzler; L. E. Halliburton; M. P. Scripsick; J. Rottenberg

J. Appl. Phys. 85, 1063–1068 (1999) https://doi.org/10.1063/1.369229

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CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

Post-annealing effects on antireduction characteristics of ${IrO}_{2} /Pb ({Zr}_{x} {Ti}_{1−x}) O_{3} /Pt$ ferroelectric capacitors

Keiko Kushida-Abdelghafar; Masahiko Hiratani; Yoshihisa Fujisaki

J. Appl. Phys. 85, 1069–1074 (1999) https://doi.org/10.1063/1.369230

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Pyroelectric effect in Y–Ba–Cu–O thin films under laser illumination

Donald P. Butler; Zeynep Çelik-Butler; Roman Adam; Roman Sobolewski

J. Appl. Phys. 85, 1075–1079 (1999) https://doi.org/10.1063/1.369231

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E-field induced phase transition in 〈001〉-oriented rhombohedral $0.92 Pb ({Zn}_{1/3} {Nb}_{2/3}) O_{3} –0.08 {PbTiO}_{3}$ crystals

Dong-Soo Paik; Seung-Eek Park; Satoshi Wada; Shi-Fang Liu; Thomas R. Shrout

J. Appl. Phys. 85, 1080–1083 (1999) https://doi.org/10.1063/1.369252

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Microwave dielectric properties and characteristics of polar lattice vibrations for ${Ba(Mg}_{1/3} {Ta}_{2/3} {)O}_{3} {–A(Mg}_{1/2} W_{1/2} {)O}_{3}$ (⁠ $A=Ba,$ Sr, and Ca) ceramics

Mitsuru Furuya

J. Appl. Phys. 85, 1084–1088 (1999) https://doi.org/10.1063/1.369232

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Capacitance transient spectroscopy in metal-insulator-metal systems and its application to the determination of trap parameters in polyimide films

D. Liufu; K. C. Kao

J. Appl. Phys. 85, 1089–1094 (1999) https://doi.org/10.1063/1.369233

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Effect of bismuth content on the properties of ${Sr}_{0.8} {Bi}_{x} {Ta}_{1.2} {Nb}_{0.9} O_{9+y}$ ferroelectric thin films

Huei-Mei Tsai; Pang Lin; Tseung-Yuen Tseng

J. Appl. Phys. 85, 1095–1100 (1999) https://doi.org/10.1063/1.369234

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Electromechanical responses of antiferroelectric and ferrielectric liquid crystals

A. Jákli

J. Appl. Phys. 85, 1101–1104 (1999) https://doi.org/10.1063/1.369235

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Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs

R. L. Maltez; Z. Liliental-Weber; J. Washburn; M. Behar; P. B. Klein; P. Specht; E. R. Weber

J. Appl. Phys. 85, 1105–1113 (1999) https://doi.org/10.1063/1.369236

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Ellipsometric examination of optical property of the ${Si–SiO}_{2}$ interface using the s-wave antireflection

Yong Jai Cho; Yun Woo Lee; Hyun Mo Cho; In Won Lee; Sang Youl Kim

J. Appl. Phys. 85, 1114–1119 (1999) https://doi.org/10.1063/1.369253

Abstract

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Effect of laser irradiation on the luminescence of Mg and Si-doped GaN films

M. Herrera Zaldı́var; P. Fernández; J. Piqueras; J. Solı́s

J. Appl. Phys. 85, 1120–1123 (1999) https://doi.org/10.1063/1.369254

Abstract

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Nonlinear emission and recombination in conjugated polymer waveguides

A. Haugeneder; M. Neges; C. Kallinger; W. Spirkl; U. Lemmer; J. Feldmann; M.-C. Amann; U. Scherf

J. Appl. Phys. 85, 1124–1130 (1999) https://doi.org/10.1063/1.369237

Abstract

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Dynamics of laser produced carbon plasma expanding in a nonuniform magnetic field

A. Neogi; R. K. Thareja

J. Appl. Phys. 85, 1131–1136 (1999) https://doi.org/10.1063/1.369238

Abstract

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Some considerations on the secondary electron emission, $δ,$ from $e^{-}$ irradiated insulators

Jacques Cazaux

J. Appl. Phys. 85, 1137–1147 (1999) https://doi.org/10.1063/1.369239

Abstract

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INTERDISCIPLINARY PHYSICS (PACS 81-98)

Ethyl-acetate transport in poly(ethylene terephthalate)

Hao Ouyang; Shyh-Horng Shore

J. Appl. Phys. 85, 1148–1152 (1999) https://doi.org/10.1063/1.369240

Abstract

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Powder agglomeration patterns at acoustic driving observed by sonoluminescence technique

O. A. Korotchenkov; T. Goto

J. Appl. Phys. 85, 1153–1158 (1999) https://doi.org/10.1063/1.369241

Abstract

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Evolution of Ge islands on Si(001) during annealing

T. I. Kamins; G. Medeiros-Ribeiro; D. A. A. Ohlberg; R. Stanley Williams

J. Appl. Phys. 85, 1159–1171 (1999) https://doi.org/10.1063/1.369255

Abstract

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In situ observation of hydrogenated amorphous silicon surfaces in electron cyclotron resonance hydrogen plasma annealing

Ryoichi Nozawa; Hirohisa Takeda; Masafumi Ito; Masaru Hori; Toshio Goto

J. Appl. Phys. 85, 1172–1177 (1999) https://doi.org/10.1063/1.369242

Abstract

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Time of flight mass spectroscopy of recoiled ions studies of surface kinetics and growth peculiarities during gas source molecular beam epitaxy of GaN

Esther Kim; I. Berishev; A. Bensaoula; I. Rusakova; K. Waters; J. A. Schultz

J. Appl. Phys. 85, 1178–1185 (1999) https://doi.org/10.1063/1.369243

Abstract

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Oxidation kinetics of small nickel particles

Richard Karmhag; Gunnar A. Niklasson; Mats Nygren

J. Appl. Phys. 85, 1186–1191 (1999) https://doi.org/10.1063/1.369244

Abstract

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On the origin of $1/f$ noise in polysilicon emitter bipolar transistors

M. Jamal Deen; S. L. Rumyantsev; M. Schroter

J. Appl. Phys. 85, 1192–1195 (1999) https://doi.org/10.1063/1.369256

Abstract

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Performance predictions for a silicon velocity modulation transistor

G. C. Crow; R. A. Abram

J. Appl. Phys. 85, 1196–1202 (1999) https://doi.org/10.1063/1.369245

Abstract

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Retention time in multiple-tunnel junction memory device

M. B. A. Jalil; M. Wagner; H. Ahmed

J. Appl. Phys. 85, 1203–1210 (1999) https://doi.org/10.1063/1.369246

Abstract

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Temperature investigation of dark current and its electrical noise in GaAs/AlGaAs multiquantum well photodiodes

M. Wintrebert-Fouquet; B. Orsal

J. Appl. Phys. 85, 1211–1215 (1999) https://doi.org/10.1063/1.369343

Abstract

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Analysis of conduction mechanisms in annealed $n- {Si}_{1−x} C_{x} : H /p$ -crystalline Si heterojunction diodes for different doping concentrations

L. F. Marsal; J. Pallares; X. Correig; A. Orpella; D. Bardés; R. Alcubilla

J. Appl. Phys. 85, 1216–1221 (1999) https://doi.org/10.1063/1.369344

Abstract

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COMMUNICATIONS

Electron swarm parameters in carbon tetrafluoride

A. V. Vasenkov

J. Appl. Phys. 85, 1222–1224 (1999) https://doi.org/10.1063/1.369345

Abstract

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Structural characterization of a lamellar W/Si multilayer grating

M. Jergel; P. Mikulı́k; E. Majková; Š. Luby; R. Senderák; E. Pinčı́k; M. Brunel; P. Hudek; I. Kostič; A. Konečnı́ková

J. Appl. Phys. 85, 1225–1227 (1999) https://doi.org/10.1063/1.369346

Abstract

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Small angle electron diffraction and Foucault mode Lorentz microscopy of superconducting vortex lattice

T. Yoshida; J. Endo; H. Kasai; K. Harada; N. Osakabe; T. A. Tonomura; G. Pozzi

J. Appl. Phys. 85, 1228–1230 (1999) https://doi.org/10.1063/1.369347

Abstract

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Determination of surface energy of polymers by force microscopy

A. El Ghzaoui

J. Appl. Phys. 85, 1231–1233 (1999) https://doi.org/10.1063/1.369348

Abstract

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Carrier trapping in iron-doped GaInP

A. Čėsna; D. Söderström; S. Marcinkevičius; S. Lourdudoss

J. Appl. Phys. 85, 1234–1236 (1999) https://doi.org/10.1063/1.369349

Abstract

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Near-field coupling effect in normal-incidence absorption of quantum-well infrared photodetectors

Y. Y. Fu; M. Willander; W. Lu; W. L. Xu; Ning Li; Na Li; X. Q. Liu; Y. D. Chen; S. C. Shen

J. Appl. Phys. 85, 1237–1239 (1999) https://doi.org/10.1063/1.370033

Abstract

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Epitaxial ${Si}_{1−y} C_{y}$ alloys: The role of surface and gas phase reactions

A. C. Mocuta; D. W. Greve

J. Appl. Phys. 85, 1240–1242 (1999) https://doi.org/10.1063/1.369350

Abstract

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ERRATA

Erratum: “Plasma chemistry aspects of a-Si:H deposition using an expanding thermal plasma” [J. Appl. Phys. 84, 2426 (1998)]

M. C. M. van de Sanden; R. J. Severens; W. M. M. Kessels; R. F. G. Meulenbroeks; D. C. Schram

J. Appl. Phys. 85, 1243 (1999) https://doi.org/10.1063/1.369257

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Issues

GENERAL PHYSICS: NUCLEAR, ATOMIC, AND MOLECULAR (PACS 01-39)

CLASSICAL PHENOMENOLOGY: ELECTRICITY, MAGNETISM, OPTICS, ACOUSTICS, HEAT, MECHANICS (PACS 41-52)

CONDENSED MATTER: STRUCTURE, MECHANICAL, AND THERMAL PROPERTIES (PACS 61-68)

CONDENSED MATTER: ELECTRICAL AND MAGNETIC PROPERTIES (PACS 71-76)

CONDENSED MATTER: DIELECTRIC AND OPTICAL PROPERTIES (PACS 77-79)

INTERDISCIPLINARY PHYSICS (PACS 81-98)

COMMUNICATIONS

ERRATA

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